2N7002MTF N-Channel Small Signal MOSFET FEATURES BVDSS = 60 V ! Lower RDS(on) RDS(on) = 5.0 ! Improved Inductive Ruggedness ! Fast Switching Times ID = 200 mA ! Lower Input Capacitance ! Extended Safe Operating Area SOT-23 ! Improved High Temperature Reliability Product Summary 1.Gate 2. Source 3. Drain Part Number BVDSS RDS(on) 2N7002 60V 5.0 ID 115mA Absolute Maximum Ratings Symbol VDSS ID Characteristic Value 60 Drain-to-Source Voltage Continuous Drain Current (TC=25) 115 Continuous Drain Current (TC=100) 73 Units V mA IDM Drain Current-Pulsed 800 mA VGS Gate-to-Source Voltage 20 V Total Power Dissipation (TC=25) 0.2 W Linear Derating Factor 1.6 mW/ - 55 to +150 PD TJ , TSTG Operating Junction and Storage Temperature Range Thermal Resistance Symbol Characteristic Typ. Max. Units RJA Junction-to-Ambient -- 625 /W Rev. C1 N-Channel Small Signal MOSFET 2N7002MTF Electrical Characteristics (TC=25 unless otherwise specified) Symbol Characteristic Min. Typ. Max. Units Test Condition BVDSS Drain-Source Breakdown Voltage 60 - - V VGS = 0V, ID = 250A VGS(th) Gate Threshold Voltage 1.2 - 2.5 V VDS = VGS, ID = 250A - - 100 Gate-Source Leakage, Forward IGSS Gate-Source Leakage, Reverse IDSS Drain-to-Source Leakage Current ID(ON) On-State Drain-Source Current Static Drain-Source RDS(on) On-State Resistance nA - -100 - - 1.0 - - 500 0.5 - - A VDS = 10V, VGS = 10V - - 5.0 VGS = 10V, ID = 0.5A 0.08 - - S VDS = 15V, ID = 0.2A Forward Transconductance Ciss Input Capacitance - - 50 Coss Output Capacitance - - 25 Crss Reverse Transfer Capacitance - - 5 td(on) Turn-On Delay Time - - 20 Rise Time - - - Turn-Off Delay Time - - 20 Fall Time - - - td(off) tf VGS = -20V - gfs tr VGS = 20V A VGS = 40V VGS = 40V, TC = 125 pF VDS = 25V, VGS = 0V, f = 1.0MHz VDD = 30V, ID = 0.2A ns RG = 25 Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units - - 115 mA IS Continuous Source Current ISD Pulse Source Current - - 800 mA VSD Diode Forward Voltage - - 1.5 V Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature Pulse Test : Pulse Width = 250s, Duty Cycle 2% Essentially Independent of Operating Temperature Test Condition Integral reverse pn-diode In the MOSFET TA = 25 , IS = 115mA VGS = 0V N-Channel Small Signal MOSFET 2N7002MTF 2N7002MTF N-Channel Small Signal MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11