2N7002MTF
BV
DSS
= 60 V
R
DS(on)
= 5.0 Ω
I
D
= 200 mA
60
115
73
800
±20
0.2
1.6
- 55 to +150
625--
!Lower R
DS(on)
!Improved Inductive Ruggedness
!Fast Switching Times
!Lower Input Capacitance
!Extended Safe Operating Area
!Improved High Temperature Reliability
N-Channel Small Signa l MOSFET
Thermal Resistance
Junction-to-Ambient
R
θJA
℃/W
Characteristic Max. UnitsSymbol Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25℃)
Continuous Drain Current (T
C
=100℃)
Drain Current-Pulsed
①
Gate-to-Source Voltage
Total Power Dissipation (T
C
=25℃)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Characteristic Value UnitsSymbol
I
DM
V
GS
I
D
P
D
T
J
, T
STG
mA
V
W
mW/℃
mA
V
DSS
V
SOT-23
1.Gate 2. Source 3. Drain
℃
Rev. C1
Product Summary
Part Number BV
DSS
R
DS
(on) I
D
2N7002 60V 5.0Ω115mA
N-Channel
Small Signal MOSFET
Electrical Characteristics
(T
C
=25℃unless otherwise specified)
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
2N7002MTF
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Lea kag e, Forward
Gate-Source Lea kag e, Rev er s e
Drain-to-Source Leakage Current
On-State Drain-Source Current
Static Drain-Source
On-State Resistance ②
Forward Transconductance ②
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
60
1.2
-
-
-
-
0.5
-
0.08
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.5
100
-100
1.0
500
-
5.0
-
50
25
5
20
-
20
-
V
V
nA
µA
A
Ω
S
pF
ns
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 20V
V
GS
= -20V
V
GS
= 40V
V
GS
= 40V, T
C
= 125℃
V
DS
= 10V, V
GS
= 10V
V
GS
= 10V, I
D
= 0.5A
V
DS
= 15V, I
D
= 0.2A
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
V
DD
= 30V, I
D
= 0.2A
R
G
= 25Ω②③
Notes ;
①Repetitive Rat i ng : Puls e Wi dth Lim i ted by Maximum Junc tion T emperature
②Pulse Test : P ulse Wi dth = 250μs, Duty Cycle ≤2%
③Essential l y Indep endent of Operati ng T emperature
Source-Drain Diode Ratings and Characteristics
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
I
S
I
SD
V
SD
Continuous Source Current
Pulse Source Current ①
Diode Forward Voltage ②
-
-
-
-
-
-
115
800
1.5
mA
mA
V
Integral reverse pn-diode
In the MOSFET
T
A
= 25 ℃, I
S
= 115mA
V
GS
= 0V
N-Channel
Small Signal MOSFET
2N7002MTF
N-Channel
Small Signal MOSFET
2N7002MTF
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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