A Product Line of Diodes Incorporated ZXTN25100BFH 100V NPN LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 100V BVCEX > 170V Forward Blocking Voltage BVECO > 6V Reverse Blocking Voltage IC = 3A high Continuous Collector Current Low Saturation Voltage, VCE(SAT) < 80mV @1A RCE(SAT) = 67m for a Low Equivalent On-Resistance 1.25W Power Dissipation hFE Specified up to 3A for High Current Gain Hold Up Complementary PNP Type: ZXTP25100BFH Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications SOT23 Case: SOT23 Case Material: molded plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight 0.008 grams (Approximate) Lamp Relay and Solenoid Drivers General Switching in Automotive and Industrial Applications Motor Drive and Control C E C B B E Top View Device Symbol Top View Pin-Out Ordering Information (Note 4) Product ZXTN25100BFHTA Notes: Marking 021 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT23 021 ZXTN25100BFH Document number: DS33703 Rev. 3 - 2 021 = Product Type Marking Code 1 of 7 www.diodes.com May 2015 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXTN25100BFH Absolute Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage (Forward Blocking) Collector-Emitter Voltage Emitter-Base Voltage (Reverse Blocking) Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Symbol VCBO VCEX VCEO VECO VEBO IC ICM Value 170 170 100 6 7 3 9 Unit V V V V V A A Value 0.60 Unit Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Symbol (Note 5) 4.80 (Note 6) Power Dissipation Linear Derating Factor (Note 7) PD (Note 8) (Note 9) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Leads Operating and Storage Temperature Range (Note 5) (Note 6) (Note 7) (Note 8) (Note 9) (Note 10) RJA RJL TJ, TSTG 0.73 5.84 1.05 8.4 1.25 9.6 1.81 14.5 209 171 119 100 69 75 -55 to +150 W mW C/W C/W C ESD Ratings (Note 11) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 8,000 400 Unit V V JEDEC Class 3B C 5. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady-state. 6. Same as Note 5, except mounted with the collector lead on 15mm x 15mm 1oz copper. 7. Same as Note 5, except mounted with the collector lead on 25mm x 25mm 2oz copper. 8. Same as Note 5, except mounted with the collector lead on 50mm x 50mm 2 oz copper. 9. Same as Note 8, except measured at t < 5 seconds. 10. Thermal resistance from junction to solder-point (at the end of collector lead). 11.Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZXTN25100BFH Document number: DS33703 Rev. 3 - 2 2 of 7 www.diodes.com May 2015 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXTN25100BFH 100 VCE(sat) 10 Limited IC Collector Current (A) IC Collector Current (A) Thermal Characteristics and Derating information 1 DC 1s 100ms 100m Single Pulse Tamb=25C 10ms 1ms 50mm X 50mm X 1.6mm FR4 2oz Cu 10m 100m 100s 1 10 BV(BR)CEO=100V 10 1 BV(BR)CEV=170V T amb=25C 100 0 VCE Collector-Emitter Voltage (V) Maximum Power (W) Thermal Resistance (C/W) Tamb=25C 60 D=0.5 40 D=0.2 Single Pulse 20 D=0.05 D=0.1 0 100 1m 10m 100m 1 10 40 60 80 100 120 140 160 180 Safe Operating Area 50mm X 50mm X 1.6mm FR4 2oz Cu 80 20 VCE Collector-Emitter Voltage (V) Safe Operating Area 100 Failure may occur in this region 100 1k Single Pulse T amb=25C 100 50mm X 50mm X 1.6mm FR4 2oz Cu 10 1 100 Pulse Width (s) 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation Max Power Dissipation (W) 1.4 50mm X 50mm X 1.6mm FR4 2oz Cu 1.2 1.0 25mm X 25mm X 1.6mm FR4 2oz Cu 0.8 0.6 0.4 15mm X 15mm X 1.6mm FR4 0.2 0.0 1oz Cu 0 20 40 60 80 100 120 140 160 Temperature (C) Derating Curve ZXTN25100BFH Document number: DS33703 Rev. 3 - 2 3 of 7 www.diodes.com May 2015 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXTN25100BFH Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Forward Blocking) (Note 12) Collector-Emitter Breakdown Voltage (Note 12) Emitter-Collector Breakdown Voltage (Reverse Blocking) (Note 12) Emitter-Collector Breakdown Voltage Emitter-Base Breakdown Voltage Symbol BVCBO Min 170 Typ 220 Max - Unit V BVCEX 170 210 - V BVCEO 100 120 - V BVECX 6 7 - V BVECO BVEBO 6 7 8.4 8 - V V Collector Cut-Off Current ICBO - <1 Collector Emitter Cut-Off Current ICEX - - Emitter Cut-Off Current IEBO - hFE 100 50 - Collector-Emitter Saturation Voltage (Note 12) VCE(sat) - Base-Emitter Saturation Voltage (Note 12) Base-Emitter Saturation Voltage (Note 12) VBE(sat) VBE(on) Static Forward Current Transfer Ratio (Note 12) Transition Frequency Collector Output Capacitance Delay Time Rise Time Storage Time Fall Time Note: 50 20 nA 100 nA <1 50 nA 200 85 20 300 - - 40 100 70 200 55 135 80 250 mV - 940 890 1050 1000 mV mV fT - 160 - MHz Cobo t(d) t(r) t(s) t(f) - 9.4 16 55 677 95 20 - pF ns ns ns ns Test Condition IC = 100A IC = 100A, RBE < 1k or -1V < VBE < 0.25V IC = 1mA IE = 100A, RBC < 1k or 0.25V > VBC > -0.25V IE = 100A IE = 100A VCB = 136V VCB = 136V, TA = +100C VCE = 136V, RBE < 1k or -1V < VBE < 0.25V VEB = 5.6V IC = 10mA, VCE = 2V IC = 1A, VCE = 2V IC = 3A, VCE = 2V IC = 0.5A, IB = 50mA IC = 0.5A, IB = 10mA IC = 1A, IB = 100mA IC = 3A, IB = 300mA IC = 3A, IB = 300mA IC = 3A, VCE = 2V IC = 100mA, VCE = 5V, f = 100MHz VCB = 10V, f = 1MHz VCC = 10V, IC = 0.5A, IB1 = -IB2 = 50mA 12. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2% ZXTN25100BFH Document number: DS33703 Rev. 3 - 2 4 of 7 www.diodes.com May 2015 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXTN25100BFH Typical Electrical Characteristics (@TA = +25C, unless otherwise specified.) 1 0.5 Tamb=25C IC/IB=10 0.4 100m VCE(SAT) (V) VCE(SAT) (V) IC/IB=100 IC/IB=50 IC/IB=20 0.3 150C 100C 0.2 25C 0.1 IC/IB=10 10m 1m 10m 100m 1 0.0 10m 10 IC Collector Current (A) 1.2 100C 1.0 0.8 25C 0.6 0.4 -55C 0.2 0.0 1m 10m 100m 1 10 350 325 300 275 250 225 200 175 150 125 100 75 50 25 0 1.2 IC/IB=10 1.0 VBE(SAT) (V) Normalised Gain 1.4 25C 0.6 100C 150C 0.4 1m 10m 100m 1 IC Collector Current (A) hFE v IC VCE=2V -55C 0.8 IC Collector Current (A) 1.0 1 VCE(SAT) v IC Typical Gain (hFE) VCE=2V 150C 100m IC Collector Current (A) VCE(SAT) v IC 1.6 -55C VBE(SAT) v IC -55C 25C VBE(ON) (V) 0.8 0.6 100C 0.4 150C 0.2 1m 10m 100m 1 IC Collector Current (A) VBE(ON) v IC ZXTN25100BFH Document number: DS33703 Rev. 3 - 2 5 of 7 www.diodes.com May 2015 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXTN25100BFH Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. All 7 H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D G F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 8 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X Note: Dimensions Z X Y C E Value (in mm) 2.9 0.8 0.9 2.0 1.35 E For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device terminals and PCB tracking. ZXTN25100BFH Document number: DS33703 Rev. 3 - 2 6 of 7 www.diodes.com May 2015 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXTN25100BFH IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2015, Diodes Incorporated www.diodes.com ZXTN25100BFH Document number: DS33703 Rev. 3 - 2 7 of 7 www.diodes.com May 2015 (c) Diodes Incorporated