AFS600-1FG256K - MICROCHIP TECHNOLOGY

May 2018 I

Fusion Family of Mixed Signal FPGAs

Features and Benefits

High-Performance Reprogrammable Flash Technology

• Advanced 130-nm, 7-Layer Metal, Flash-Based CMOS Process

• Nonvolatile, Retains Program when Powered Off

• Instant On Single-Chip Solution

• 350 MHz System Performance

Embedded Flash Memory

• User Flash Memory – 2 Mbits to 8 Mbits

– Configurable 8-, 16-, or 32-Bit Datapath

– 10 ns Access in Read-Ahead Mode

• 1 Kbit of Additional FlashROM

Integrated A/D Converter (ADC) and Analog I/O

• Up to 12-Bit Resolution and up to 600 Ksps

• Internal 2.56 V or External Reference Voltage

• ADC: Up to 30 Scalable Analog Input Channels

• High-Voltage Input Tolerance: –10.5 V to +12 V

• Current Monitor and Temperature Monitor Blocks

• Up to 10 MOSFET Gate Driver Outputs

– P- and N-Channel Power MOSFET Support

– Programmable 1, 3, 10, 30 µA, and 20 mA Drive Strengths

• ADC Accuracy is Better than 1%

On-Chip Clocking Support

• Internal 100 MHz RC Oscillator (accurate to 1%)

• Crystal Oscillator Support (32 KHz to 20 MHz)

• Programmable Real-Time Counter (RTC)

• 6 Clock Conditioning Circuits (CCCs) with 1 or 2 Integrated PLLs

– Phase Shift, Multiply/Divide, and Delay Capabilities

– Frequency: Input 1.5–350 MHz, Output 0.75–350 MHz

Low Power Consumption

• Single 3.3 V Power Supply with On-Chip 1.5 V Regulator

• Sleep and Standby Low-Power Modes

In-System Programming (ISP) and Security

• ISP with 128-Bit AES via JTAG

• FlashLock® Designed to Protect FPGA Contents

Advanced Digital I/O

• 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation

• Bank-Selectable I/O Voltages – Up to 5 Banks per Chip

• Single-Ended I/O Standards: LVTTL, LVCMOS

3.3 V / 2.5 V /1.8 V / 1.5 V, 3.3 V PCI / 3.3 V PCI-X, and

LVCMOS 2.5 V / 5.0 V Input

• Differential I/O Standards: LVPECL, LVDS, B-LVDS, M-LVDS

– Built-In I/O Registers

– 700 Mbps DDR Operation

• Hot-Swappable I/Os

• Programmable Output Slew Rate, Drive Strength, and Weak

Pull-Up/Down Resistor

• Pin-Compatible Packages across the Fusion® Family

SRAMs and FIFOs

• Variable-Aspect-Ratio 4,608-Bit SRAM Blocks (×1, ×2, ×4, ×9,

and ×18 organizations available)

• True Dual-Port SRAM (except ×18)

• Programmable Embedded FIFO Control Logic

Soft ARM Cortex-M1 Fusion Devices (M1)

•ARM

® Cortex®-M1–Enabled

Pigeon Point ATCA IP Support (P1)

• Targeted to Pigeon Point® Board Management Reference

(BMR) Starter Kits

• Designed in Partnership with Pigeon Point Systems

• ARM Cortex-M1 Enabled

MicroBlade Advanced Mezzanine Card Support (U1)

• Targeted to Advanced Mezzanine Card (AdvancedMC™ Designs)

• Designed in Partnership with MicroBlade

• 8051-Based Module Management Controller (MMC)

Table 1 • Fusion Family

Fusion Devices AFS090 AFS250 AFS600 AFS1500

ARM Cortex-M1* Devices M1AFS250 M1AFS600 M1AFS1500

Pigeon Point Devices P1AFS600 P1AFS1500

MicroBlade Devices U1AFS250 U1AFS600 U1AFS1500

General

Information

System Gates 90,000 250,000 600,000 1,500,000

Tiles (D-flip-flops) 2,304 6,144 13,824 38,400

Secure (AES) ISP Yes Yes Yes Yes

PLLs 1122

Globals 18 18 18 18

Memory

Flash Memory Blocks (2 Mbits) 1 1 2 4

Total Flash Memory Bits 2M 2M 4M 8M

FlashROM Bits 1,024 1,024 1,024 1,024

RAM Blocks (4,608 bits) 6 8 24 60

RAM kbits 27 36 108 270

Analog and I/Os

Analog Quads 5 6 10 10

Analog Input Channels 15 18 30 30

Gate Driver Outputs 5 6 10 10

I/O Banks (+ JTAG) 4 4 5 5

Maximum Digital I/Os 75 114 172 252

Analog I/Os 20 24 40 40

Note: *Refer to the Cortex-M1 product brief for more information.

Revision 8

DS0092

Fusion Family of Mixed Signal FPGAs

II Revision 8

Fusion Device Architecture Overview

Package I/Os: Single-/Double-Ended (Analog)

Figure 1 • Fusion Device Architecture Overview (AFS600)

Fusion Devices AFS090 AFS250 AFS600 AFS1500

ARM Cortex-M1 Devices M1AFS250 M1AFS600 M1AFS1500

Pigeon Point Devices P1AFS600 1P1AFS1500 1

MicroBlade Devices U1AFS250 2U1AFS600 2U1AFS1500 2

QN108 337/9 (16)

QN180 360/16 (20) 65/15 (24)

PQ208 4, 5 93/26 (24) 95/46 (40)

FG256 75/22 (20) 114/37 (24) 119/58 (40) 119/58 (40)

FG484 172/86 (40) 223/109 (40)

FG676 252/126 (40)

Notes:

1. Pigeon Point devices are only offered in FG484 and FG256.

2. MicroBlade devices are only offered in FG256.

3. Package not available.

4. Fusion devices in the same package are pin compatible with the exception of the PQ208 package (AFS250 and AFS600).

5. PQ208 package is discontinued.

VersaTile

CCC

I/Os

OSC

CCC/PLL

Bank 0

Bank 4

Bank 2

Bank 1

Bank 3

SRAM Block

4,608-Bit Dual-Port SRAM

or FIFO Block

SRAM Block

4,608-Bit Dual-Port SRAM

or FIFO Block

Flash Memory Blocks Flash Memory BlocksADC

Analog

Quad

ISP AES

Decryption

User Nonvolatile

FlashROM Charge Pumps

Analog

Quad

Analog

Quad

Analog

Quad

Analog

Quad

Analog

Quad

Analog

Quad

Analog

Quad

Analog

Quad

Analog

Quad

Fusion Family of Mixed Signal FPGAs

Revision 8 III

Product Ordering Codes

Fusion Device Status

Notes:

1. For Fusion devices, Quad Flat No Lead packages are only offered as RoHS compliant, QNG packages.

2. MicroBlade and Pigeon Point devices only support FG packages.

3. Package is discontinued.

Fusion Status Cortex-M1 Status Pigeon Point Status MicroBlade Status

AFS090 Production

AFS250 Production M1AFS250 Production U1AFS250 Production

AFS600 Production M1AFS600 Production P1AFS600 Production U1AFS600 Production

AFS1500 Production M1AFS1500 Production P1AFS1500 Production U1AFS1500 Production

M1AFS600 FG

Part Number

Fusion Devices

Speed Grade

Blank = Standard

1 = 15% Faster than Standard

2 = 25% Faster than Standard

Package Type

QN =Quad Flat No Lead (0.5 mm pitch)

256 IG

Package Lead Count

Security Feature

Application (junction temperature range)

Blank = Commercial (0 to +85°C)

I = Industrial (–40 to +100°C)

PP = Pre-Production

ES = Engineering Silicon (room temperature only)

90,000 System Gates

AFS090 =

250,000 System Gates

AFS250 =

ARM-Enabled Fusion Devices

600,000 System Gates

AFS600 =

1,500,000 System Gates

AFS1500 =

MicroBlade Devices

250,000 System Gates

U1AFS250 =

600,000 System Gates

U1AFS600 =

1,500,000 System Gates

U1AFS1500 =

Pigeon Point Devices

600,000 System Gates

P1AFS600 =

1,500,000 System Gates

P1AFS1500 =

250,000 System Gates

M1AFS250 =

600,000 System Gates

M1AFS600 =

1,500,000 System Gates

M1AFS1500 =

PQ =Plastic Quad Flat Pack (0.5 mm pitch)

FG =Fine Pitch Ball Grid Array (1.0 mm pitch)

Lead-Free Packaging Options

Blank = Standard Packaging

G = RoHS-Compliant (green) Packaging

Y = Device Includes License to Implement IP Based on

the Cryptography Research, Inc. (CRI) Patent Portfolio

Blank = Device Does Not Include License to Implement IP Based

on the Cryptography Research, Inc. (CRI) Patent Portfolio

Fusion Family of Mixed Signal FPGAs

IV Revision 8

Temperature Grade Offerings

Speed Grade and Temperature Grade Matrix

Contact your local Microsemi SoC Products Group representative for device availability:

http://www.microsemi.com/index.php?option=com_content&id=137&lang=en&view=article.

Cortex-M1, Pigeon Point, and MicroBlade Fusion Device Information

This datasheet provides information for all Fusion (AFS), Cortex-M1 (M1), Pigeon Point (P1), and MicroBlade (U1) devices. The

remainder of the document will only list the Fusion (AFS) devices. Please apply relevant information to M1, P1, and U1 devices

when appropriate. Please note the following:

• Cortex-M1 devices are offered in the same speed grades and packages as basic Fusion devices.

• Pigeon Point devices are only offered in –2 speed grade and FG484 and FG256 packages.

• MicroBlade devices are only offered in standard speed grade and the FG256 package.

Fusion Devices AFS090 AFS250 AFS600 AFS1500

ARM Cortex-M1 Devices M1AFS250 M1AFS600 M1AFS1500

Pigeon Point Devices P1AFS600 3P1AFS1500 3

MicroBlade Devices U1AFS250 4U1AFS600 4U1AFS1500 4

QN108 5C, I – – –

QN180 5C, I C, I – –

PQ208 6–C, IC, I–

FG256 C, IC, IC, IC, I

FG484 – – C, I C, I

FG676 –––C, I

Notes:

1. C = Commercial Temperature Range: 0°C to 85°C Junction

2. I = Industrial Temperature Range: –40°C to 100°C Junction

3. Pigeon Point devices are only offered in FG484 and FG256.

4. MicroBlade devices are only offered in FG256.

5. Package not available.

6. Package is discontinued.

Std.1–1 –22

C3

I4

Notes:

1. MicroBlade devices are only offered in standard speed grade.

2. Pigeon Point devices are only offered in –2 speed grade.

3. C = Commercial Temperature Range: 0°C to 85°C Junction

4. I = Industrial Temperature Range: –40°C to 100°C Junction

Fusion Family of Mixed Signal FPGAs

Revision 8 V

Table of Contents

Fusion Device Family Overview

Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-1

General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-1

Unprecedented Integration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-4

Related Documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-10

Device Architecture

Fusion Stack Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-1

Core Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-2

Clocking Resources . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-18

Real-Time Counter System . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-31

Embedded Memories . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-39

Analog Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-76

Analog Configuration MUX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-126

User I/Os . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-132

Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-223

Security . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-228

DC and Power Characteristics

General Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-1

Calculating Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-10

Power Consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-32

Package Pin Assignments

QN108 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-1

QN180 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-3

PQ208 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-7

FG256 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-11

FG484 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-19

FG676 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-27

Datasheet Information

List of Changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-1

Datasheet Categories . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-18

Safety Critical, Life Support, and High-Reliability Applications Policy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-18

Revision 8 1-1

1 – Fusion Device Family Overview

Introduction

The Fusion mixed signal FPGA satisfies the demand from system architects for a device that simplifies

design and unleashes their creativity. As the world’s first mixed signal programmable logic family, Fusion

integrates mixed signal analog, flash memory, and FPGA fabric in a monolithic device. Fusion devices

enable designers to quickly move from concept to completed design and then deliver feature-rich

systems to market. This new technology takes advantage of the unique properties of Microsemi

flash-based FPGAs, including a high-isolation, triple-well process and the ability to support high-voltage

transistors to meet the demanding requirements of mixed signal system design.

Fusion mixed signal FPGAs bring the benefits of programmable logic to many application areas,

including power management, smart battery charging, clock generation and management, and motor

control. Until now, these applications have only been implemented with costly and space-consuming

discrete analog components or mixed signal ASIC solutions. Fusion mixed signal FPGAs present new

capabilities for system development by allowing designers to integrate a wide range of functionality into a

single device, while at the same time offering the flexibility of upgrades late in the manufacturing process

or after the device is in the field. Fusion devices provide an excellent alternative to costly and

time-consuming mixed signal ASIC designs. In addition, when used in conjunction with the ARM

Cortex-M1 processor, Fusion technology represents the definitive mixed signal FPGA platform.

Flash-based Fusion devices are Instant On. As soon as system power is applied and within normal

operating specifications, Fusion devices are working. Fusion devices have a 128-bit flash-based lock and

industry-leading AES decryption, used to secure programmed intellectual property (IP) and configuration

data. Fusion devices are the most comprehensive single-chip analog and digital programmable logic

solution available today.

To support this new ground-breaking technology, Microsemi has developed a series of major tool

innovations to help maximize designer productivity. Implemented as extensions to the popular Microsemi

Libero® System-on-Chip (SoC) software, these new tools allow designers to easily instantiate and

configure peripherals within a design, establish links between peripherals, create or import building

blocks or reference designs, and perform hardware verification. This tool suite will also add

comprehensive hardware/software debug capability as well as a suite of utilities to simplify development

of embedded soft-processor-based solutions.

General Description

The Fusion family, based on the highly successful ProASIC®3 and ProASIC3E flash FPGA architecture,

has been designed as a high-performance, programmable, mixed signal platform. By combining an

advanced flash FPGA core with flash memory blocks and analog peripherals, Fusion devices

dramatically simplify system design and, as a result, dramatically reduce overall system cost and board

space.

The state-of-the-art flash memory technology offers high-density integrated flash memory blocks,

enabling savings in cost, power, and board area relative to external flash solutions, while providing

increased flexibility and performance. The flash memory blocks and integrated analog peripherals enable

true mixed-mode programmable logic designs. Two examples are using an on-chip soft processor to

implement a fully functional flash MCU and using high-speed FPGA logic to offer system and power

supervisory capabilities. Instant On, and capable of operating from a single 3.3 V supply, the Fusion

family is ideally suited for system management and control applications.

The devices in the Fusion family are categorized by FPGA core density. Each family member contains

many peripherals, including flash memory blocks, an analog-to-digital-converter (ADC), high-drive

outputs, both RC and crystal oscillators, and a real-time counter (RTC). This provides the user with a

high level of flexibility and integration to support a wide variety of mixed signal applications. The flash

memory block capacity ranges from 2 Mbits to 8 Mbits. The integrated 12-bit ADC supports up to 30

independently configurable input channels.

Fusion Family of Mixed Signal FPGAs

Revision 8 1-2

The on-chip crystal and RC oscillators work in conjunction with the integrated phase-locked loops (PLLs)

to provide clocking support to the FPGA array and on-chip resources. In addition to supporting typical

RTC uses such as watchdog timer, the Fusion RTC can control the on-chip voltage regulator to power

down the device (FPGA fabric, flash memory block, and ADC), enabling a low power standby mode.

The Fusion family offers revolutionary features, never before available in an FPGA. The nonvolatile flash

technology gives the Fusion solution the advantage of being a highly secure, low power, single-chip

solution that is Instant On. Fusion is reprogrammable and offers time-to-market benefits at an ASIC-level

unit cost. These features enable designers to create high-density systems using existing ASIC or FPGA

design flows and tools.

Flash Advantages

Reduced Cost of Ownership

Advantages to the designer extend beyond low unit cost, high performance, and ease of use. Flash-

based Fusion devices are Instant On and do not need to be loaded from an external boot PROM.

On-board security mechanisms prevent access to the programming information and enable remote

updates of the FPGA logic that are protected with high level security. Designers can perform remote in-

system reprogramming to support future design iterations and field upgrades, with confidence that

valuable IP is highly unlikely to be compromised or copied. ISP can be performed using the

industry-standard AES algorithm with MAC data authentication on the device. The Fusion family device

architecture mitigates the need for ASIC migration at higher user volumes. This makes the Fusion family

a cost-effective ASIC replacement solution for applications in the consumer, networking and

communications, computing, and avionics markets.

Security

As the nonvolatile, flash-based Fusion family requires no boot PROM, there is no vulnerable external

bitstream. Fusion devices incorporate FlashLock, which provides a unique combination of

reprogrammability and design security without external overhead, advantages that only an FPGA with

nonvolatile flash programming can offer.

Fusion devices utilize a 128-bit flash-based key lock and a separate AES key to provide the highest level

of protection in the FPGA industry for programmed IP and configuration data. The FlashROM data in

Fusion devices can also be encrypted prior to loading. Additionally, the flash memory blocks can be

programmed during runtime using the industry-leading AES-128 block cipher encryption standard (FIPS

Publication 192). The AES standard was adopted by the National Institute of Standards and Technology

(NIST) in 2000 and replaces the DES standard, which was adopted in 1977. Fusion devices have a

built-in AES decryption engine and a flash-based AES key that make Fusion devices the most

comprehensive programmable logic device security solution available today. Fusion devices with

AES-based security provide a high level of protection for remote field updates over public networks, such

as the Internet, and are designed to ensure that valuable IP remains out of the hands of system

overbuilders, system cloners, and IP thieves. As an additional security measure, the FPGA configuration

data of a programmed Fusion device cannot be read back, although secure design verification is

possible. During design, the user controls and defines both internal and external access to the flash

memory blocks.

Security, built into the FPGA fabric, is an inherent component of the Fusion family. The flash cells are

located beneath seven metal layers, and many device design and layout techniques have been used to

make invasive attacks extremely difficult. Fusion with FlashLock and AES security is unique in being

highly resistant to both invasive and noninvasive attacks. Your valuable IP is protected with

industry-standard security, making remote ISP possible. A Fusion device provides the best available

security for programmable logic designs.

Single Chip

Flash-based FPGAs store their configuration information in on-chip flash cells. Once programmed, the

configuration data is an inherent part of the FPGA structure, and no external configuration data needs to

be loaded at system power-up (unlike SRAM-based FPGAs). Therefore, flash-based Fusion FPGAs do

not require system configuration components such as EEPROMs or microcontrollers to load device

configuration data. This reduces bill-of-materials costs and PCB area, and increases security and system

reliability.

Fusion Device Family Overview

1-3 Revision 8

Instant On

Flash-based Fusion devices are Level 0 Instant On. Instant On Fusion devices greatly simplify total

system design and reduce total system cost by eliminating the need for CPLDs. The Fusion Instant On

clocking (PLLs) replaces off-chip clocking resources. The Fusion mix of Instant On clocking and analog

resources makes these devices an excellent choice for both system supervisor and system management

functions. Instant On from a single 3.3 V source enables Fusion devices to initiate, control, and monitor

multiple voltage supplies while also providing system clocks. In addition, glitches and brownouts in

system power will not corrupt the Fusion device flash configuration. Unlike SRAM-based FPGAs, the

device will not have to be reloaded when system power is restored. This enables reduction or complete

removal of expensive voltage monitor and brownout detection devices from the PCB design.

Flash-based Fusion devices simplify total system design and reduce cost and design risk, while

increasing system reliability.

Firm Errors

Firm errors occur most commonly when high-energy neutrons, generated in the upper atmosphere, strike

a configuration cell of an SRAM FPGA. The energy of the collision can change the state of the

configuration cell and thus change the logic, routing, or I/O behavior in an unpredictable way. Another

source of radiation-induced firm errors is alpha particles. For an alpha to cause a soft or firm error, its

source must be in very close proximity to the affected circuit. The alpha source must be in the package

molding compound or in the die itself. While low-alpha molding compounds are being used increasingly,

this helps reduce but does not entirely eliminate alpha-induced firm errors.

Firm errors are impossible to prevent in SRAM FPGAs. The consequence of this type of error can be a

complete system failure. Firm errors do not occur in Fusion flash-based FPGAs. Once it is programmed,

the flash cell configuration element of Fusion FPGAs cannot be altered by high-energy neutrons and is

therefore immune to errors from them.

Recoverable (or soft) errors occur in the user data SRAMs of all FPGA devices. These can easily be

mitigated by using error detection and correction (EDAC) circuitry built into the FPGA fabric.

Low Power

Flash-based Fusion devices exhibit power characteristics similar to those of an ASIC, making them an

ideal choice for power-sensitive applications. With Fusion devices, there is no power-on current surge

and no high current transition, both of which occur on many FPGAs.

Fusion devices also have low dynamic power consumption and support both low power standby mode

and very low power sleep mode, offering further power savings.

Advanced Flash Technology

The Fusion family offers many benefits, including nonvolatility and reprogrammability through an

advanced flash-based, 130-nm LVCMOS process with seven layers of metal. Standard CMOS design

techniques are used to implement logic and control functions. The combination of fine granularity,

enhanced flexible routing resources, and abundant flash switches allows very high logic utilization (much

higher than competing SRAM technologies) without compromising device routability or performance.

Logic functions within the device are interconnected through a four-level routing hierarchy.

Fusion Family of Mixed Signal FPGAs

Revision 8 1-4

Advanced Architecture

The proprietary Fusion architecture provides granularity comparable to standard-cell ASICs. The Fusion

device consists of several distinct and programmable architectural features, including the following

(Figure 1-1 on page 1-5):

• Embedded memories

– Flash memory blocks

–FlashROM

– SRAM and FIFO

• Clocking resources

– PLL and CCC

– RC oscillator

– Crystal oscillator

– No-Glitch MUX (NGMUX)

• Digital I/Os with advanced I/O standards

• FPGA VersaTiles

• Analog components

–ADC

– Analog I/Os supporting voltage, current, and temperature monitoring

– 1.5 V on-board voltage regulator

– Real-time counter

The FPGA core consists of a sea of VersaTiles. Each VersaTile can be configured as a three-input logic

lookup table (LUT) equivalent or a D-flip-flop or latch (with or without enable) by programming the

appropriate flash switch interconnections. This versatility allows efficient use of the FPGA fabric. The

VersaTile capability is unique to the Microsemi families of flash-based FPGAs. VersaTiles and larger

functions are connected with any of the four levels of routing hierarchy. Flash switches are distributed

throughout the device to provide nonvolatile, reconfigurable interconnect programming. Maximum core

utilization is possible for virtually any design.

In addition, extensive on-chip programming circuitry allows for rapid (3.3 V) single-voltage programming

of Fusion devices via an IEEE 1532 JTAG interface.

Unprecedented Integration

Integrated Analog Blocks and Analog I/Os

Fusion devices offer robust and flexible analog mixed signal capability in addition to the high-

performance flash FPGA fabric and flash memory block. The many built-in analog peripherals include a

configurable 32:1 input analog MUX, up to 10 independent MOSFET gate driver outputs, and a

configurable ADC. The ADC supports 8-, 10-, and 12-bit modes of operation with a cumulative sample

rate up to 600 k samples per second (Ksps), differential nonlinearity (DNL) < 1.0 LSB, and Total

Unadjusted Error (TUE) of 0.72 LSB in 10-bit mode. The TUE is used for characterization of the

conversion error and includes errors from all sources, such as offset and linearity. Internal bandgap

circuitry offers 1% voltage reference accuracy with the flexibility of utilizing an external reference voltage.

The ADC channel sampling sequence and sampling rate are programmable and implemented in the

FPGA logic using Designer and Libero SoC software tool support.

Two channels of the 32-channel ADCMUX are dedicated. Channel 0 is connected internally to VCC and

can be used to monitor core power supply. Channel 31 is connected to an internal temperature diode

which can be used to monitor device temperature. The 30 remaining channels can be connected to

external analog signals. The exact number of I/Os available for external connection signals is device-

dependent (refer to the "Fusion Family" table on page I for details).

Fusion Device Family Overview

1-5 Revision 8

With Fusion, Microsemi also introduces the Analog Quad I/O structure (Figure 1-1). Each quad consists

of three analog inputs and one gate driver. Each quad can be configured in various built-in circuit

combinations, such as three prescaler circuits, three digital input circuits, a current monitor circuit, or a

temperature monitor circuit. Each prescaler has multiple scaling factors programmed by FPGA signals to

support a large range of analog inputs with positive or negative polarity. When the current monitor circuit

is selected, two adjacent analog inputs measure the voltage drop across a small external sense resistor.

For more information, refer to the "Analog System Characteristics" section on page 2-117. Built-in

operational amplifiers amplify small voltage signals for accurate current measurement. One analog input

in each quad can be connected to an external temperature monitor diode. In addition to the external

temperature monitor diode(s), a Fusion device can monitor an internal temperature diode using

dedicated channel 31 of the ADCMUX.

Figure 1-1 on page 1-5 illustrates a typical use of the Analog Quad I/O structure. The Analog Quad

shown is configured to monitor and control an external power supply. The AV pad measures the source

of the power supply. The AC pad measures the voltage drop across an external sense resistor to

calculate current. The AG MOSFET gate driver pad turns the external MOSFET on and off. The AT pad

measures the load-side voltage level.

Figure 1-1 • Analog Quad

Analog Quad

AV AC AT

Voltage

Monitor Block

Current

Monitor Block

Power Line Side Load Side

Pre-

scaler

Digital

Input

Power

MOSFET

Gate Driver

Current

Monitor/Instr

Amplifier

Temperature

Monitor

Digital

Input

Digital

Input

Pre-

scaler

Pre-

scaler

Pads

To Analog MUX To Analog MUX To Analog MUX

To FPGA

(DAVOUTx)

To FPGA

(DACOUTx)

To FPGA

(DATOUTx)

On-Chip

Gate

Driver

Temperature

Monitor Block

Off-Chip R

pullup

From FPGA

(GDONx)

Fusion Family of Mixed Signal FPGAs

Revision 8 1-6

Embedded Memories

Flash Memory Blocks

The flash memory available in each Fusion device is composed of one to four flash blocks, each 2 Mbits

in density. Each block operates independently with a dedicated flash controller and interface. Fusion

flash memory blocks combine fast access times (60 ns random access and 10 ns access in Read-Ahead

mode) with a configurable 8-, 16-, or 32-bit datapath, enabling high-speed flash operation without wait

states. The memory block is organized in pages and sectors. Each page has 128 bytes, with 33 pages

comprising one sector and 64 sectors per block. The flash block can support multiple partitions. The only

constraint on size is that partition boundaries must coincide with page boundaries. The flexibility and

granularity enable many use models and allow added granularity in programming updates.

Fusion devices support two methods of external access to the flash memory blocks. The first method is a

serial interface that features a built-in JTAG-compliant port, which allows in-system programmability

during user or monitor/test modes. This serial interface supports programming of an AES-encrypted

stream. Data protected with security measures can be passed through the JTAG interface, decrypted,

and then programmed in the flash block. The second method is a soft parallel interface.

FPGA logic or an on-chip soft microprocessor can access flash memory through the parallel interface.

Since the flash parallel interface is implemented in the FPGA fabric, it can potentially be customized to

meet special user requirements. For more information, refer to the CoreCFI Handbook. The flash

memory parallel interface provides configurable byte-wide (×8), word-wide (×16), or dual-word-wide

(×32) data-port options. Through the programmable flash parallel interface, the on-chip and off-chip

memories can be cascaded for wider or deeper configurations.

The flash memory has built-in security. The user can configure either the entire flash block or the small

blocks to protect against unintentional or intrusive attempts to change or destroy the storage contents.

Each on-chip flash memory block has a dedicated controller, enabling each block to operate

independently.

The flash block logic consists of the following sub-blocks:

• Flash block – Contains all stored data. The flash block contains 64 sectors and each sector

contains 33 pages of data.

• Page Buffer – Contains the contents of the current page being modified. A page contains 8 blocks

of data.

• Block Buffer – Contains the contents of the last block accessed. A block contains 128 data bits.

• ECC Logic – The flash memory stores error correction information with each block to perform

single-bit error correction and double-bit error detection on all data blocks.

User Nonvolatile FlashROM

In addition to the flash blocks, Fusion devices have 1 Kbit of user-accessible, nonvolatile FlashROM

on-chip. The FlashROM is organized as 8×128-bit pages. The FlashROM can be used in diverse system

applications:

• Internet protocol addressing (wireless or fixed)

• System calibration settings

• Device serialization and/or inventory control

• Subscription-based business models (for example, set-top boxes)

• Secure key storage for communications algorithms protected by security

• Asset management/tracking

• Date stamping

• Version management

The FlashROM is written using the standard IEEE 1532 JTAG programming interface. Pages can be

individually programmed (erased and written). On-chip AES decryption can be used selectively over

public networks to load data such as security keys stored in the FlashROM for a user design.

The FlashROM can be programmed (erased and written) via the JTAG programming interface, and its

contents can be read back either through the JTAG programming interface or via direct FPGA core

addressing.

Fusion Device Family Overview

1-7 Revision 8

The FlashPoint tool in the Fusion development software solutions, Libero SoC and Designer, has

extensive support for flash memory blocks and FlashROM. One such feature is auto-generation of

sequential programming files for applications requiring a unique serial number in each part. Another

feature allows the inclusion of static data for system version control. Data for the FlashROM can be

generated quickly and easily using the Libero SoC and Designer software tools. Comprehensive

programming file support is also included to allow for easy programming of large numbers of parts with

differing FlashROM contents.

SRAM and FIFO

Fusion devices have embedded SRAM blocks along the north and south sides of the device. Each

variable-aspect-ratio SRAM block is 4,608 bits in size. Available memory configurations are 256×18,

512×9, 1k×4, 2k×2, and 4k×1 bits. The individual blocks have independent read and write ports that can

be configured with different bit widths on each port. For example, data can be written through a 4-bit port

and read as a single bitstream. The SRAM blocks can be initialized from the flash memory blocks or via

the device JTAG port (ROM emulation mode), using the UJTAG macro.

In addition, every SRAM block has an embedded FIFO control unit. The control unit allows the SRAM

block to be configured as a synchronous FIFO without using additional core VersaTiles. The FIFO width

and depth are programmable. The FIFO also features programmable Almost Empty (AEMPTY) and

Almost Full (AFULL) flags in addition to the normal EMPTY and FULL flags. The embedded FIFO control

unit contains the counters necessary for the generation of the read and write address pointers. The

SRAM/FIFO blocks can be cascaded to create larger configurations.

Clock Resources

PLLs and Clock Conditioning Circuits (CCCs)

Fusion devices provide designers with very flexible clock conditioning capabilities. Each member of the

Fusion family contains six CCCs. In the two larger family members, two of these CCCs also include a

PLL; the smaller devices support one PLL.

The inputs of the CCC blocks are accessible from the FPGA core or from one of several inputs with

dedicated CCC block connections.

The CCC block has the following key features:

• Wide input frequency range (fIN_CCC) = 1.5MHz to 350MHz

• Output frequency range (fOUT_CCC) = 0.75 MHz to 350 MHz

• Clock phase adjustment via programmable and fixed delays from –6.275 ns to +8.75 ns

• Clock skew minimization (PLL)

• Clock frequency synthesis (PLL)

• On-chip analog clocking resources usable as inputs:

– 100 MHz on-chip RC oscillator

– Crystal oscillator

Additional CCC specifications:

• Internal phase shift = 0°, 90°, 180°, and 270°

• Output duty cycle = 50% ± 1.5%

• Low output jitter. Samples of peak-to-peak period jitter when a single global network is used:

– 70 ps at 350 MHz

– 90 ps at 100 MHz

– 180 ps at 24 MHz

– Worst case < 2.5% × clock period

• Maximum acquisition time = 150 µs

• Low power consumption of 5 mW

Fusion Family of Mixed Signal FPGAs

Revision 8 1-8

Global Clocking

Fusion devices have extensive support for multiple clocking domains. In addition to the CCC and PLL

support described above, there are on-chip oscillators as well as a comprehensive global clock

distribution network.

The integrated RC oscillator generates a 100 MHz clock. It is used internally to provide a known clock

source to the flash memory read and write control. It can also be used as a source for the PLLs.

The crystal oscillator supports the following operating modes:

• Crystal (32.768 KHz to 20 MHz)

• Ceramic (500 KHz to 8 MHz)

• RC (32.768 KHz to 4 MHz)

Each VersaTile input and output port has access to nine VersaNets: six main and three quadrant global

networks. The VersaNets can be driven by the CCC or directly accessed from the core via MUXes. The

VersaNets can be used to distribute low-skew clock signals or for rapid distribution of high-fanout nets.

Digital I/Os with Advanced I/O Standards

The Fusion family of FPGAs features a flexible digital I/O structure, supporting a range of voltages (1.5 V,

1.8 V, 2.5 V, and 3.3 V). Fusion FPGAs support many different digital I/O standards, both single-ended

and differential.

The I/Os are organized into banks, with four or five banks per device. The configuration of these banks

determines the I/O standards supported. The banks along the east and west sides of the device support

the full range of I/O standards (single-ended and differential). The south bank supports the Analog Quads

(analog I/O). In the family's two smaller devices, the north bank supports multiple single-ended digital I/O

standards. In the family’s larger devices, the north bank is divided into two banks of digital Pro I/Os,

supporting a wide variety of single-ended, differential, and voltage-referenced I/O standards.

Each I/O module contains several input, output, and enable registers. These registers allow the

implementation of the following applications:

• Single-Data-Rate (SDR) applications

• Double-Data-Rate (DDR) applications—DDR LVDS I/O for chip-to-chip communications

• Fusion banks support LVPECL, LVDS, BLVDS, and M-LVDS with 20 multi-drop points.

VersaTiles

The Fusion core consists of VersaTiles, which are also used in the successful ProASIC3 family. The

Fusion VersaTile supports the following:

• All 3-input logic functions—LUT-3 equivalent

• Latch with clear or set

• D-flip-flop with clear or set and optional enable

Refer to Figure 1-2 for the VersaTile configuration arrangement.

Figure 1-2 • VersaTile Configurations

LUT-3

Data Y

CLK

Enable

CLR

D-FFE

Data Y

CLK

CLR

D-FF

LUT-3 Equivalent D-Flip-Flop with Clear or Set Enable D-Flip-Flop with Clear or Set

Fusion Device Family Overview

1-9 Revision 8

Specifying I/O States During Programming

You can modify the I/O states during programming in FlashPro. In FlashPro, this feature is supported for

PDB files generated from Designer v8.5 or greater. See the FlashPro User Guide for more information.

Note: PDB files generated from Designer v8.1 to Designer v8.4 (including all service packs) have

limited display of Pin Numbers only.

The I/Os are controlled by the JTAG Boundary Scan register during programming, except for the analog

pins (AC, AT and AV). The Boundary Scan register of the AG pin can be used to enable/disable the gate

driver in Libero SoC.

1. Load a PDB from the FlashPro GUI. You must have a PDB loaded to modify the I/O states during

programming.

2. From the FlashPro GUI, click PDB Configuration. A FlashPoint – Programming File Generator

window appears.

3. Click the Specify I/O States During Programming button to display the Specify I/O States

During Programming dialog box.

4. Sort the pins as desired by clicking any of the column headers to sort the entries by that header.

Select the I/Os you wish to modify (Figure 1-3).

5. Set the I/O Output State. You can set Basic I/O settings if you want to use the default I/O settings

for your pins, or use Custom I/O settings to customize the settings for each pin. Basic I/O state

settings:

1 – I/O is set to drive out logic High

0 – I/O is set to drive out logic Low

Last Known State – I/O is set to the last value that was driven out prior to entering the

programming mode, and then held at that value during programming

Z -Tri-State: I/O is tristated

6. Click OK to return to the FlashPoint – Programming File Generator window.

I/O States During programming are saved to the ADB and resulting programming files after completing

programming file generation.

Figure 1-3 • I/O States During Programming Window

Fusion Family of Mixed Signal FPGAs

Revision 8 1-10

Read Next Operation

The Read Next operation is a feature by which the next block relative to the block in the Block Buffer is

read from the FB Array while performing reads from the Block Buffer. The goal is to minimize wait states

during consecutive sequential Read operations.

The Read Next operation is performed in a predetermined manner because it does look-ahead reads.

The general look-ahead function is as follows:

• Within a page, the next block fetched will be the next in linear address.

• When reading the last data block of a page, it will fetch the first block of the next page.

• When reading spare pages, it will read the first block of the next sector's spare page.

• Reads of the last sector will wrap around to sector 0.

• Reads of Auxiliary blocks will read the next linear page's Auxiliary block.

When an address on the ADDR input does not agree with the predetermined look-ahead address, there

is a time penalty for this access. The FB will be busy finishing the current look-ahead read before it can

start the next read. The worst case is a total of nine BUSY cycles before data is delivered.

The Non-Pipe Mode and Pipe Mode waveforms for Read Next operations are illustrated in Figure 2-40

and Figure 2-41.

Figure 2-40 • Read Next Waveform (Non-Pipe Mode, 32-bit access)

Figure 2-41 • Read Next WaveForm (Pipe Mode, 32-bit access)

CLK

REN

READNEXT

ADDR[17:0]

DATAWIDTH[1:0]

BUSY

STATUS[1:0]

RD[31:0]

A0 A1 A2 A3 A4 A5 A6 A7 A8 A9

0 S0S1S2 S4S5S6 S8S9

0D0D1D2

0D4 D5 D6 D8 D9

CLK

REN

READNEXT

ADDR[17:0]

BUSY

STATUS[1:0]

RD[31:0]

A0 A1 A2 A3 A4 A5 A6 A7 A8

S0 S1 S2 S4 S5 S6

0D0D1D2

0D4D5D6

S7 0

0D7

Device Architecture

2-51 Revision 8

Unprotect Page Operation

An Unprotect Page operation will clear the protection for a page addressed on the ADDR input. It is

initiated by setting the UNPROTECTPAGE signal on the interface along with the page address on

ADDR.

If the page is not in the Page Buffer, the Unprotect Page operation will copy the page into the Page

Buffer. The Copy Page operation occurs only if the current page in the Page Buffer is not Page Loss

Protected.

The waveform for an Unprotect Page operation is shown in Figure 2-42.

The Unprotect Page operation can incur the following error conditions:

1. If the copy of the page to the Page Buffer determines that the page has a single-bit correctable

error in the data, it will report a STATUS = '01'.

2. If the address on ADDR does not match the address of the Page Buffer, PAGELOSSPROTECT is

asserted, and the Page Buffer has been modified, then STATUS = '11' and the addressed page is

not loaded into the Page Buffer.

3. If the copy of the page to the Page Buffer determines that at least one block in the page has a

double-bit uncorrectable error, STATUS = '10' and the Page Buffer will contain the corrupted data.

Discard Page Operation

If the contents of the modified Page Buffer have to be discarded, the DISCARDPAGE signal should be

asserted. This command results in the Page Buffer being marked as unmodified.

The timing for the operation is shown in Figure 2-43. The BUSY signal will remain asserted until the

operation has completed.

Figure 2-42 • FB Unprotected Page Waveform

CLK

UNPROTECTPAGE

ADDR[17:0]

BUSY

STATUS[1:0]

Page

Valid

Figure 2-43 • FB Discard Page Waveform

CLK

DISCARDPAGE

BUSY

Fusion Family of Mixed Signal FPGAs

Revision 8 2-52

Flash Memory Block Characteristics

Figure 2-44 • Reset Timing Diagram

Table 2-25 • Flash Memory Block Timing

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V

Parameter Description –2 –1 Std.

Units

tCLK2RD

Clock-to-Q in 5-cycle read mode of the Read Data 7.99 9.10 10.70 ns

Clock-to-Q in 6-cycle read mode of the Read Data 5.03 5.73 6.74 ns

tCLK2BUSY

Clock-to-Q in 5-cycle read mode of BUSY 4.95 5.63 6.62 ns

Clock-to-Q in 6-cycle read mode of BUSY 4.45 5.07 5.96 ns

tCLK2STATUS

Clock-to-Status in 5-cycle read mode 11.24 12.81 15.06 ns

Clock-to-Status in 6-cycle read mode 4.48 5.10 6.00 ns

tDSUNVM Data Input Setup time for the Control Logic 1.92 2.19 2.57 ns

tDHNVM Data Input Hold time for the Control Logic 0.00 0.00 0.00 ns

tASUNVM Address Input Setup time for the Control Logic 2.76 3.14 3.69 ns

tAHNVM Address Input Hold time for the Control Logic 0.00 0.00 0.00 ns

tSUDWNVM Data Width Setup time for the Control Logic 1.85 2.11 2.48 ns

tHDDWNVM Data Width Hold time for the Control Logic 0.00 0.00 0.00 ns

tSURENNVM Read Enable Setup time for the Control Logic 3.85 4.39 5.16 ns

tHDRENNVM Read Enable Hold Time for the Control Logic 0.00 0.00 0.00 ns

tSUWENNVM Write Enable Setup time for the Control Logic 2.37 2.69 3.17 ns

tHDWENNVM Write Enable Hold Time for the Control Logic 0.00 0.00 0.00 ns

tSUPROGNVM Program Setup time for the Control Logic 2.16 2.46 2.89 ns

tHDPROGNVM Program Hold time for the Control Logic 0.00 0.00 0.00 ns

tSUSPAREPAGE SparePage Setup time for the Control Logic 3.74 4.26 5.01 ns

tHDSPAREPAGE SparePage Hold time for the Control Logic 0.00 0.00 0.00 ns

tSUAUXBLK Auxiliary Block Setup Time for the Control Logic 3.74 4.26 5.00 ns

tHDAUXBLK Auxiliary Block Hold Time for the Control Logic 0.00 0.00 0.00 ns

tSURDNEXT ReadNext Setup Time for the Control Logic 2.17 2.47 2.90 ns

tHDRDNEXT ReadNext Hold Time for the Control Logic 0.00 0.00 0.00 ns

tSUERASEPG Erase Page Setup Time for the Control Logic 3.76 4.28 5.03 ns

tHDERASEPG Erase Page Hold Time for the Control Logic 0.00 0.00 0.00 ns

tSUUNPROTECTPG Unprotect Page Setup Time for the Control Logic 2.01 2.29 2.69 ns

tHDUNPROTECTPG Unprotect Page Hold Time for the Control Logic 0.00 0.00 0.00 ns

tSUDISCARDPG Discard Page Setup Time for the Control Logic 1.88 2.14 2.52 ns

tHDDISCARDPG Discard Page Hold Time for the Control Logic 0.00 0.00 0.00 ns

tSUOVERWRPRO Overwrite Protect Setup Time for the Control Logic 1.64 1.86 2.19 ns

tHDOVERWRPRO Overwrite Protect Hold Time for the Control Logic 0.00 0.00 0.00 ns

CLK

RESET

Active Low, Asynchronous

BUSY

Device Architecture

2-53 Revision 8

FlashROM

Fusion devices have 1 kbit of on-chip nonvolatile flash memory that can be read from the FPGA core

fabric. The FlashROM is arranged in eight banks of 128 bits during programming. The 128 bits in each

bank are addressable as 16 bytes during the read-back of the FlashROM from the FPGA core (Figure 2-

45).

The FlashROM can only be programmed via the IEEE 1532 JTAG port. It cannot be programmed directly

from the FPGA core. When programming, each of the eight 128-bit banks can be selectively

reprogrammed. The FlashROM can only be reprogrammed on a bank boundary. Programming involves

an automatic, on-chip bank erase prior to reprogramming the bank. The FlashROM supports a

synchronous read and can be read on byte boundaries. The upper three bits of the FlashROM address

from the FPGA core define the bank that is being accessed. The lower four bits of the FlashROM

address from the FPGA core define which of the 16 bytes in the bank is being accessed.

The maximum FlashROM access clock is given in Table 2-26 on page 2-54. Figure 2-46 shows the

timing behavior of the FlashROM access cycle—the address has to be set up on the rising edge of the

clock for DOUT to be valid on the next falling edge of the clock.

If the address is unchanged for two cycles:

• D0 becomes invalid tCK2Q ns after the second rising edge of the clock.

• D0 becomes valid again tCK2Q ns after the second falling edge.

If the address unchanged for three cycles:

• D0 becomes invalid tCK2Q ns after the second rising edge of the clock.

• D0 becomes valid again tCK2Q ns after the second falling edge.

• D0 becomes invalid tCK2Q ns after the third rising edge of the clock.

• D0 becomes valid again tCK2Q ns after the third falling edge.

tSUPGLOSSPRO Page Loss Protect Setup Time for the Control Logic 1.69 1.93 2.27 ns

tHDPGLOSSPRO Page Loss Protect Hold Time for the Control Logic 0.00 0.00 0.00 ns

tSUPGSTAT Page Status Setup Time for the Control Logic 2.49 2.83 3.33 ns

tHDPGSTAT Page Status Hold Time for the Control Logic 0.00 0.00 0.00 ns

tSUOVERWRPG Over Write Page Setup Time for the Control Logic 1.88 2.14 2.52 ns

tHDOVERWRPG Over Write Page Hold Time for the Control Logic 0.00 0.00 0.00 ns

tSULOCKREQUEST Lock Request Setup Time for the Control Logic 0.87 0.99 1.16 ns

tHDLOCKREQUEST Lock Request Hold Time for the Control Logic 0.00 0.00 0.00 ns

tRECARNVM Reset Recovery Time 0.94 1.07 1.25 ns

tREMARNVM Reset Removal Time 0.00 0.00 0.00 ns

tMPWARNVM

Asynchronous Reset Minimum Pulse Width for the

Control Logic

10.00 12.50 12.50 ns

tMPWCLKNVM Clock Minimum Pulse Width for the Control Logic 4.00 5.00 5.00 ns

tFMAXCLKNVM

Maximum Frequency for Clock for the Control Logic – for

AFS1500/AFS600

80.00 80.00 80.00 MHz

Maximum Frequency for Clock for the Control Logic – for

AFS250/AFS090

100.00 80.00 80.00 MHz

Table 2-25 • Flash Memory Block Timing (continued)

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V

Parameter Description –2 –1 Std.

Units

Fusion Family of Mixed Signal FPGAs

Revision 8 2-54

FlashROM Characteristics

Figure 2-45 • FlashROM Architecture

Bank Number

3 MSB of ADDR (READ)

Byte Number in Bank 4 LSB of ADDR (READ)

0123456789101112131415

Figure 2-46 • FlashROM Timing Diagram

HOLD

Address

CK2Q

D0 D0

HOLD

CK2Q

HOLD

CK2Q

Table 2-26 • FlashROM Access Time

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V

Parameter Description –2 –1 Std. Units

tSU Address Setup Time 0.53 0.61 0.71 ns

tHOLD Address Hold Time 0.00 0.00 0.00 ns

tCK2Q Clock to Out 21.42 24.40 28.68 ns

FMAX Maximum Clock frequency 15.00 15.00 15.00 MHz

Device Architecture

2-55 Revision 8

SRAM and FIFO

All Fusion devices have SRAM blocks along the north side of the device. Additionally, AFS600 and

AFS1500 devices have an SRAM block on the south side of the device. To meet the needs of high-

performance designs, the memory blocks operate strictly in synchronous mode for both read and write

operations. The read and write clocks are completely independent, and each may operate at any desired

frequency less than or equal to 350 MHz. The following configurations are available:

• 4k×1, 2k×2, 1k×4, 512×9 (dual-port RAM—two read, two write or one read, one write)

• 512×9, 256×18 (two-port RAM—one read and one write)

• Sync write, sync pipelined/nonpipelined read

The Fusion SRAM memory block includes dedicated FIFO control logic to generate internal addresses

and external flag logic (FULL, EMPTY, AFULL, AEMPTY).

During RAM operation, addresses are sourced by the user logic, and the FIFO controller is ignored. In

FIFO mode, the internal addresses are generated by the FIFO controller and routed to the RAM array by

internal MUXes. Refer to Figure 2-47 for more information about the implementation of the embedded

FIFO controller.

The Fusion architecture enables the read and write sizes of RAMs to be organized independently,

allowing for bus conversion. This is done with the WW (write width) and RW (read width) pins. The

different D×W configurations are 256×18, 512×9, 1k×4, 2k×2, and 4k×1. For example, the write size can

be set to 256×18 and the read size to 512×9.

Both the write and read widths for the RAM blocks can be specified independently with the WW (write

width) and RW (read width) pins. The different D×W configurations are 256×18, 512×9, 1k×4, 2k×2, and

4k×1.

Refer to the allowable RW and WW values supported for each of the RAM macro types in Table 2-27 on

page 2-58.

When a width of one, two, or four is selected, the ninth bit is unused. For example, when writing 9-bit

values and reading 4-bit values, only the first four bits and the second four bits of each 9-bit value are

addressable for read operations. The ninth bit is not accessible.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-56

Conversely, when writing 4-bit values and reading 9-bit values, the ninth bit of a read operation will be

undefined. The RAM blocks employ little-endian byte order for read and write operations.

Figure 2-47 • Fusion RAM Block with Embedded FIFO Controller

RCLK

WCLK

Reset

RBLK

REN

ESTOP

WBLK

WEN

FSTOP

RD[17:0]

WD[17:0]

RCLK

WCLK

RADD[J:0]

WADD[J:0]

REN

FREN FWEN WEN

FULL

AEMPTY

AFULL

EMPTY

RPIPE

RW[2:0]

WW[2:0]

RAM

CNT 12

AFVAL

AEVAL

SUB 12

CNT 12

Device Architecture

2-57 Revision 8

RAM4K9 Description

Figure 2-48 • RAM4K9

ADDRA11 DOUTA8

DOUTA7

DOUTA0

DOUTB8

DOUTB7

DOUTB0

ADDRA10

ADDRA0

DINA8

DINA7

DINA0

WIDTHA1

WIDTHA0

PIPEA

WMODEA

BLKA

WENA

CLKA

ADDRB11

ADDRB10

ADDRB0

DINB8

DINB7

DINB0

WIDTHB1

WIDTHB0

PIPEB

WMODEB

BLKB

WENB

CLKB

RAM4K9

RESET

Fusion Family of Mixed Signal FPGAs

Revision 8 2-58

The following signals are used to configure the RAM4K9 memory element.

WIDTHA and WIDTHB

These signals enable the RAM to be configured in one of four allowable aspect ratios (Table 2-27).

BLKA and BLKB

These signals are active low and will enable the respective ports when asserted. When a BLKx signal is

deasserted, the corresponding port’s outputs hold the previous value.

WENA and WENB

These signals switch the RAM between read and write mode for the respective ports. A Low on these

signals indicates a write operation, and a High indicates a read.

CLKA and CLKB

These are the clock signals for the synchronous read and write operations. These can be driven

independently or with the same driver.

PIPEA and PIPEB

These signals are used to specify pipelined read on the output. A Low on PIPEA or PIPEB indicates a

nonpipelined read, and the data appears on the corresponding output in the same clock cycle. A High

indicates a pipelined, read and data appears on the corresponding output in the next clock cycle.

WMODEA and WMODEB

These signals are used to configure the behavior of the output when the RAM is in write mode. A Low on

these signals makes the output retain data from the previous read. A High indicates pass-through

behavior, wherein the data being written will appear immediately on the output. This signal is overridden

when the RAM is being read.

RESET

This active low signal resets the output to zero, disables reads and writes from the SRAM block, and

clears the data hold registers when asserted. It does not reset the contents of the memory.

ADDRA and ADDRB

These are used as read or write addresses, and they are 12 bits wide. When a depth of less than 4 k is

specified, the unused high-order bits must be grounded (Table 2-28).

Table 2-27 • Allowable Aspect Ratio Settings for WIDTHA[1:0]

WIDTHA1, WIDTHA0 WIDTHB1, WIDTHB0 D×W

00 00 4k×1

01 01 2k×2

10 10 1k×4

11 11 512×9

Note: The aspect ratio settings are constant and cannot be changed on the fly.

Table 2-28 • Address Pins Unused/Used for Various Supported Bus Widths

D×W

ADDRx

Unused Used

4k×1 None [11:0]

2k×2 [11] [10:0]

1k×4 [11:10] [9:0]

512×9 [11:9] [8:0]

Note: The "x" in ADDRx implies A or B.

Device Architecture

2-59 Revision 8

DINA and DINB

These are the input data signals, and they are nine bits wide. Not all nine bits are valid in all

configurations. When a data width less than nine is specified, unused high-order signals must be

grounded (Ta b le 2- 2 9 ).

DOUTA and DOUTB

These are the nine-bit output data signals. Not all nine bits are valid in all configurations. As with DINA

and DINB, high-order bits may not be used (Ta ble 2- 2 9). The output data on unused pins is undefined.

Table 2-29 • Unused/Used Input and Output Data Pins for Various Supported Bus Widths

D×W

DINx/DOUTx

Unused Used

4k×1 [8:1] [0]

2k×2 [8:2] [1:0]

1k×4 [8:4] [3:0]

512×9 None [8:0]

Note: The "x" in DINx and DOUTx implies A or B.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-60

RAM512X18 Description

Figure 2-49 • RAM512X18

RADDR8 RD17

RADDR7 RD16

RADDR0 RD0

WD17

WD16

WD0

WW1

WW0

RW1

RW0

PIPE

REN

RCLK

RAM512X18

WADDR8

WADDR7

WADDR0

WEN

WCLK

RESET

Device Architecture

2-61 Revision 8

RAM512X18 exhibits slightly different behavior from RAM4K9, as it has dedicated read and write ports.

WW and RW

These signals enable the RAM to be configured in one of the two allowable aspect ratios (Table 2-30).

WD and RD

These are the input and output data signals, and they are 18 bits wide. When a 512×9 aspect ratio is

used for write, WD[17:9] are unused and must be grounded. If this aspect ratio is used for read, then

RD[17:9] are undefined.

WADDR and RADDR

These are read and write addresses, and they are nine bits wide. When the 256×18 aspect ratio is used

for write or read, WADDR[8] or RADDR[8] are unused and must be grounded.

WCLK and RCLK

These signals are the write and read clocks, respectively. They are both active high.

WEN and REN

These signals are the write and read enables, respectively. They are both active low by default. These

signals can be configured as active high.

RESET

This active low signal resets the output to zero, disables reads and/or writes from the SRAM block, and

clears the data hold registers when asserted. It does not reset the contents of the memory.

PIPE

This signal is used to specify pipelined read on the output. A Low on PIPE indicates a nonpipelined read,

and the data appears on the output in the same clock cycle. A High indicates a pipelined read, and data

appears on the output in the next clock cycle.

Clocking

The dual-port SRAM blocks are only clocked on the rising edge. SmartGen allows falling-edge-triggered

clocks by adding inverters to the netlist, hence achieving dual-port SRAM blocks that are clocked on

either edge (rising or falling). For dual-port SRAM, each port can be clocked on either edge or by

separate clocks, by port.

Fusion devices support inversion (bubble pushing) throughout the FPGA architecture, including the clock

input to the SRAM modules. Inversions added to the SRAM clock pin on the design schematic or in the

HDL code will be automatically accounted for during design compile without incurring additional delay in

the clock path.

The two-port SRAM can be clocked on the rising edge or falling edge of WCLK and RCLK.

If negative-edge RAM and FIFO clocking is selected for memory macros, clock edge inversion

management (bubble pushing) is automatically used within the Fusion development tools, without

performance penalty.

Note: Data in the SRAM block can be corrupted during a read operation, when the read address does

not meet setup and hold requirements with respect to the clock for that port. The data corruption

occurs when the read address (RADDR) changes almost simultaneously with read clock (RCLK)

edge (that is, RADDR violates the timing requirement of the memory). Users must always meet

the setup and hold time requirements on the RAM inputs; to have reliable and predictable results

for reads and writes.To avoid data corruption due to asynchronous clocking for read address and

read clock of the RAM, users must implement a proper synchronizer circuit. For more

information, see, Fusion and Extended Temperature Fusion FPGA Fabric User's Guide

Table 2-30 • Aspect Ratio Settings for WW[1:0]

WW[1:0] RW[1:0] D×W

01 01 512×9

10 10 256×18

00, 11 00, 11 Reserved

Fusion Family of Mixed Signal FPGAs

Revision 8 2-62

Modes of Operation

There are two read modes and one write mode:

• Read Nonpipelined (synchronous—1 clock edge): In the standard read mode, new data is driven

onto the RD bus in the same clock cycle following RA and REN valid. The read address is

registered on the read port clock active edge, and data appears at RD after the RAM access time.

Setting PIPE to OFF enables this mode.

• Read Pipelined (synchronous—2 clock edges): The pipelined mode incurs an additional clock

delay from the address to the data but enables operation at a much higher frequency. The read

address is registered on the read port active clock edge, and the read data is registered and

appears at RD after the second read clock edge. Setting PIPE to ON enables this mode.

• Write (synchronous—1 clock edge): On the write clock active edge, the write data is written into

the SRAM at the write address when WEN is High. The setup times of the write address, write

enables, and write data are minimal with respect to the write clock. Write and read transfers are

described with timing requirements in the "SRAM Characteristics" section on page 2-63 and the

"FIFO Characteristics" section on page 2-72.

RAM Initialization

Each SRAM block can be individually initialized on power-up by means of the JTAG port using the

UJTAG mechanism (refer to the "JTAG IEEE 1532" section on page 2-229 and the Fusion SRAM/FIFO

Blocks application note). The shift register for a target block can be selected and loaded with the proper

bit configuration to enable serial loading. The 4,608 bits of data can be loaded in a single operation.

Device Architecture

2-63 Revision 8

SRAM Characteristics

Timing Waveforms

Figure 2-50 • RAM Read for Flow-Through Output. Applicable to both RAM4K9 and RAM512x18.

Figure 2-51 • RAM Read for Pipelined Output. Applicable to both RAM4K9 and RAM512x18.

CLK

[R|W]ADDR

BLK

WEN

DOUT|RD

A0A1A2

D0D1D2

tCYC

tCKH tCKL

tAS tAH

tBKS

tENS tENH

tDOH1

tBKH

tCKQ1

CLK

[R|W]ADDR

BLK

WEN

DOUT|RD

A0A1A2

D0D1

tCYC

tCKH tCKL

tAS tAH

tBKS

tENS tENH

tDOH2

tCKQ2

tBKH

Fusion Family of Mixed Signal FPGAs

Revision 8 2-64

Figure 2-52 • RAM Write, Output Retained. Applicable to both RAM4K9 and RAM512x18.

Figure 2-53 • RAM Write, Output as Write Data (WMODE = 1). Applicable to RAM4K9 Only.

tCYC

tCKH tCKL

A0A1A2

DI0DI1

tAS tAH

tBKS

tENS tENH

tDS tDH

CLK

BLK

WEN

[R|W]ADDR

DIN|WD

DOUT|RD

tBKH

CYC

CKH

CKL

BKS

ENS

CLK

BLK

WEN

ADDR

DIN

BKH

DOUT

(flow-through)

DOUT

(pipelined) DI

Device Architecture

2-65 Revision 8

Figure 2-54 • One Port Write / Other Port Read Same

Figure 2-55 • RAM Reset. Applicable to both RAM4K9 and RAM512x18.

CLK1

ADDR1

CLK2

ADDR2

DIN1 D

DOUT2

(flow-through)

DOUT2

(Pipelined)

CKQ2

CKQ1

WRO

CLK

RESET

DOUT|RD Dn

tCYC

tCKH tCKL

tRSTBQ

Fusion Family of Mixed Signal FPGAs

Revision 8 2-66

Timing Characteristics

Table 2-31 • RAM4K9

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V

Parameter Description –2 –1 Std. Units

tAS Address setup time 0.25 0.28 0.33 ns

tAH Address hold time 0.00 0.00 0.00 ns

tENS REN, WEN setup time 0.14 0.16 0.19 ns

tENH REN, WEN hold time 0.10 0.11 0.13 ns

tBKS BLK setup time 0.23 0.27 0.31 ns

tBKH BL hold time 0.02 0.02 0.02 ns

tDS Input data (DIN) setup time 0.18 0.21 0.25 ns

tDH Input data (DIN) hold time 0.00 0.00 0.00 ns

tCKQ1

Clock High to new data valid on DOUT (output retained, WMODE = 0) 1.79 2.03 2.39 ns

Clock High to new data valid on DOUT (flow-through, WMODE = 1) 2.36 2.68 3.15 ns

tCKQ2 Clock High to new data valid on DOUT (pipelined) 0.89 1.02 1.20 ns

tC2CWWH1Address collision clk-to-clk delay for reliable write after write on same

address—Applicable to Rising Edge

0.30 0.26 0.23 ns

tC2CRWH1Address collision clk-to-clk delay for reliable read access after write on

same address—Applicable to Opening Edge

0.45 0.38 0.34 ns

tC2CWRH1Address collision clk-to-clk delay for reliable write access after read on

same address— Applicable to Opening Edge

0.49 0.42 0.37 ns

tRSTBQ

RESET Low to data out Low on DOUT (flow-through) 0.92 1.05 1.23 ns

RESET Low to Data Out Low on DOUT (pipelined) 0.92 1.05 1.23 ns

tREMRSTB RESET removal 0.29 0.33 0.38 ns

tRECRSTB RESET recovery 1.50 1.71 2.01 ns

tMPWRSTB RESET minimum pulse width 0.21 0.24 0.29 ns

tCYC Clock cycle time 3.23 3.68 4.32 ns

FMAX Maximum frequency 310 272 231 MHz

Notes:

1. For more information, refer to the application note Simultaneous Read-Write Operations in Dual-Port SRAM for Flash-

Based cSoCs and FPGAs.

2. For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9.

Device Architecture

2-67 Revision 8

Table 2-32 • RAM512X18

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V

Parameter Description –2 –1 Std. Units

tAS Address setup time 0.25 0.28 0.33 ns

tAH Address hold time 0.00 0.00 0.00 ns

tENS REN, WEN setup time 0.09 0.10 0.12 ns

tENH REN, WEN hold time 0.06 0.07 0.08 ns

tDS Input data (WD) setup time 0.18 0.21 0.25 ns

tDH Input data (WD) hold time 0.00 0.00 0.00 ns

tCKQ1 Clock High to new data valid on RD (output retained) 2.16 2.46 2.89 ns

tCKQ2 Clock High to new data valid on RD (pipelined) 0.90 1.02 1.20 ns

tC2CRWH1Address collision clk-to-clk delay for reliable read access after write on

same address—Applicable to Opening Edge

0.50 0.43 0.38 ns

tC2CWRH1Address collision clk-to-clk delay for reliable write access after read on

same address—Applicable to Opening Edge

0.59 0.50 0.44 ns

tRSTBQ1

RESET Low to data out Low on RD (flow-through) 0.92 1.05 1.23 ns

RESET Low to data out Low on RD (pipelined) 0.92 1.05 1.23 ns

tREMRSTB RESET removal 0.29 0.33 0.38 ns

tRECRSTB RESET recovery 1.50 1.71 2.01 ns

tMPWRSTB RESET minimum pulse width 0.21 0.24 0.29 ns

tCYC Clock cycle time 3.23 3.68 4.32 ns

FMAX Maximum frequency 310 272 231 MHz

Notes:

1. For more information, refer to the application note Simultaneous Read-Write Operations in Dual-Port SRAM for Flash-

Based cSoCs and FPGAs.

2. For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-68

FIFO4K18 Description

Figure 2-56 • FIFO4KX18

FIFO4K18

RW2 RD17

RW1 RD16

RW0

WW2

WW1

WW0 RD0

ESTOP

FSTOP FULL

AFULL

EMPTY

AFVAL11

AEMPTY

AFVAL10

AFVAL0

AEVAL11

AEVAL10

AEVAL0

REN

RBLK

RCLK

WEN

WBLK

WCLK

RPIPE

WD17

WD16

WD0

RESET

Device Architecture

2-69 Revision 8

The following signals are used to configure the FIFO4K18 memory element.

WW and RW

These signals enable the FIFO to be configured in one of the five allowable aspect ratios (Table 2 - 33).

WBLK and RBLK

These signals are active low and will enable the respective ports when Low. When the RBLK signal is

High, the corresponding port’s outputs hold the previous value.

WEN and REN

Read and write enables. WEN is active low and REN is active high by default. These signals can be

configured as active high or low.

WCLK and RCLK

These are the clock signals for the synchronous read and write operations. These can be driven

independently or with the same driver.

RPIPE

This signal is used to specify pipelined read on the output. A Low on RPIPE indicates a nonpipelined

read, and the data appears on the output in the same clock cycle. A High indicates a pipelined read, and

data appears on the output in the next clock cycle.

RESET

This active low signal resets the output to zero when asserted. It resets the FIFO counters. It also sets all

the RD pins Low, the FULL and AFULL pins Low, and the EMPTY and AEMPTY pins High (Tab l e 2-34 ).

This is the input data bus and is 18 bits wide. Not all 18 bits are valid in all configurations. When a data

width less than 18 is specified, unused higher-order signals must be grounded (Table 2-34).

This is the output data bus and is 18 bits wide. Not all 18 bits are valid in all configurations. Like the WD

bus, high-order bits become unusable if the data width is less than 18. The output data on unused pins is

undefined (Ta b le 2- 3 4 ).

Table 2-33 • Aspect Ratio Settings for WW[2:0]

WW2, WW1, WW0 RW2, RW1, RW0 D×W

000 000 4k×1

001 001 2k×2

010 010 1k×4

011 011 512×9

100 100 256×18

101, 110, 111 101, 110, 111 Reserved

Table 2-34 • Input Data Signal Usage for Different Aspect Ratios

D×W WD/RD Unused

4k×1 WD[17:1], RD[17:1]

2k×2 WD[17:2], RD[17:2]

1k×4 WD[17:4], RD[17:4]

512×9 WD[17:9], RD[17:9]

256×18 –

Fusion Family of Mixed Signal FPGAs

Revision 8 2-70

ESTOP, FSTOP

ESTOP is used to stop the FIFO read counter from further counting once the FIFO is empty (i.e., the

EMPTY flag goes High). A High on this signal inhibits the counting.

FSTOP is used to stop the FIFO write counter from further counting once the FIFO is full (i.e., the FULL

flag goes High). A High on this signal inhibits the counting.

For more information on these signals, refer to the "ESTOP and FSTOP Usage" section on page 2-70.

FULL, EMPTY

When the FIFO is full and no more data can be written, the FULL flag asserts High. The FULL flag is

synchronous to WCLK to inhibit writing immediately upon detection of a full condition and to prevent

overflows. Since the write address is compared to a resynchronized (and thus time-delayed) version of

the read address, the FULL flag will remain asserted until two WCLK active edges after a read operation

eliminates the full condition.

When the FIFO is empty and no more data can be read, the EMPTY flag asserts High. The EMPTY flag

is synchronous to RCLK to inhibit reading immediately upon detection of an empty condition and to

prevent underflows. Since the read address is compared to a resynchronized (and thus time-delayed)

version of the write address, the EMPTY flag will remain asserted until two RCLK active edges after a

write operation removes the empty condition.

For more information on these signals, refer to the "FIFO Flag Usage Considerations" section on

page 2-70.

AFULL, AEMPTY

These are programmable flags and will be asserted on the threshold specified by AFVAL and AEVAL,

respectively.

When the number of words stored in the FIFO reaches the amount specified by AEVAL while reading,

the AEMPTY output will go High. Likewise, when the number of words stored in the FIFO reaches the

amount specified by AFVAL while writing, the AFULL output will go High.

AFVAL, AEVAL

The AEVAL and AFVAL pins are used to specify the almost-empty and almost-full threshold values,

respectively. They are 12-bit signals. For more information on these signals, refer to "FIFO Flag

Usage Considerations" section.

ESTOP and FSTOP Usage

The ESTOP pin is used to stop the read counter from counting any further once the FIFO is empty (i.e.,

the EMPTY flag goes High). Likewise, the FSTOP pin is used to stop the write counter from counting any

further once the FIFO is full (i.e., the FULL flag goes High).

The FIFO counters in the Fusion device start the count at 0, reach the maximum depth for the

configuration (e.g., 511 for a 512×9 configuration), and then restart at 0. An example application for the

ESTOP, where the read counter keeps counting, would be writing to the FIFO once and reading the same

content over and over without doing another write.

FIFO Flag Usage Considerations

The AEVAL and AFVAL pins are used to specify the 12-bit AEMPTY and AFULL threshold values,

respectively. The FIFO contains separate 12-bit write address (WADDR) and read address (RADDR)

counters. WADDR is incremented every time a write operation is performed, and RADDR is incremented

every time a read operation is performed. Whenever the difference between WADDR and RADDR is

greater than or equal to AFVAL, the AFULL output is asserted. Likewise, whenever the difference

between WADDR and RADDR is less than or equal to AEVAL, the AEMPTY output is asserted. To

handle different read and write aspect ratios, AFVAL and AEVAL are expressed in terms of total data bits

instead of total data words. When users specify AFVAL and AEVAL in terms of read or write words, the

SmartGen tool translates them into bit addresses and configures these signals automatically. SmartGen

configures the AFULL flag to assert when the write address exceeds the read address by at least a

predefined value. In a 2k×8 FIFO, for example, a value of 1,500 for AFVAL means that the AFULL flag

will be asserted after a write when the difference between the write address and the read address

reaches 1,500 (there have been at least 1500 more writes than reads). It will stay asserted until the

difference between the write and read addresses drops below 1,500.

Device Architecture

2-71 Revision 8

The AEMPTY flag is asserted when the difference between the write address and the read address is

less than a predefined value. In the example above, a value of 200 for AEVAL means that the AEMPTY

flag will be asserted when a read causes the difference between the write address and the read address

to drop to 200. It will stay asserted until that difference rises above 200. Note that the FIFO can be

configured with different read and write widths; in this case, the AFVAL setting is based on the number of

write data entries and the AEVAL setting is based on the number of read data entries. For aspect ratios of

512×9 and 256×18, only 4,096 bits can be addressed by the 12 bits of AFVAL and AEVAL. The number

of words must be multiplied by 8 and 16, instead of 9 and 18. The SmartGen tool automatically uses the

proper values. To avoid halfwords being written or read, which could happen if different read and write

aspect ratios are specified, the FIFO will assert FULL or EMPTY as soon as at least a minimum of one

word cannot be written or read. For example, if a two-bit word is written and a four-bit word is being read,

the FIFO will remain in the empty state when the first word is written. This occurs even if the FIFO is not

completely empty, because in this case, a complete word cannot be read. The same is applicable in the

full state. If a four-bit word is written and a two-bit word is read, the FIFO is full and one word is read. The

FULL flag will remain asserted because a complete word cannot be written at this point.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-72

FIFO Characteristics

Timing Waveforms

Figure 2-57 • FIFO Read

Figure 2-58 • FIFO Write

ENS

ENH

CKQ1

CKQ2

CYC

BKS

BKH

RCLK

RBLK

REN

(flow-through)

(pipelined)

WCLK

WEN

ENS

ENH

CYC

BKH

BKS

WBLK

Device Architecture

2-73 Revision 8

Figure 2-59 • FIFO Reset

Figure 2-60 • FIFO EMPTY Flag and AEMPTY Flag Assertion

MATCH (A0)

tMPWRSTB

tRSTFG

tRSTCK

tRSTAF

RCLK/

WCLK

RESET

AEF

WA/RA

(Address Counter)

tRSTFG

tRSTAF

AFF

RCLK

NO MATCH NO MATCH Dist = AEF_TH MATCH (EMPTY)

CKAF

RCKEF

AEF

CYC

WA/RA

(Address Counter)

Fusion Family of Mixed Signal FPGAs

Revision 8 2-74

Figure 2-61 • FIFO FULL and AFULL Flag Assertion

Figure 2-62 • FIFO EMPTY Flag and AEMPTY Flag Deassertion

Figure 2-63 • FIFO FULL Flag and AFULL Flag Deassertion

NO MATCH NO MATCH Dist = AFF_TH MATCH (FULL)

CKAF

WCKFF

CYC

WCLK

AFF

WA/RA

(Address Counter)

WCLK

WA/RA

(Address Counter) MATCH

(EMPTY) NO MATCH NO MATCH NO MATCH Dist = AEF_TH + 1

NO MATCH

RCLK

1st rising

edge

after 1st

write

2nd rising

edge

after 1st

write

RCKEF

CKAF

AEF

RCLK

WA/RA

(Address Counter) MATCH (FULL) NO MATCH NO MATCH NO MATCH Dist = AFF_TH – 1NO MATCH

WCLK

1st Rising

Edge

After 1st

Read

1st Rising

Edge

After 2nd

Read

WCKF

CKAF

AFF

Device Architecture

2-75 Revision 8

Timing Characteristics

Table 2-35 • FIFO

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V

Parameter Description –2 –1 Std. Units

tENS REN, WEN Setup time 1.34 1.52 1.79 ns

tENH REN, WEN Hold time 0.00 0.00 0.00 ns

tBKS BLK Setup time 0.19 0.22 0.26 ns

tBKH BLK Hold time 0.00 0.00 0.00 ns

tDS Input data (WD) Setup time 0.18 0.21 0.25 ns

tDH Input data (WD) Hold time 0.00 0.00 0.00 ns

tCKQ1 Clock High to New Data Valid on RD (flow-through) 2.17 2.47 2.90 ns

tCKQ2 Clock High to New Data Valid on RD (pipelined) 0.94 1.07 1.26 ns

tRCKEF RCLK High to Empty Flag Valid 1.72 1.96 2.30 ns

tWCKFF WCLK High to Full Flag Valid 1.63 1.86 2.18 ns

tCKAF Clock High to Almost Empty/Full Flag Valid 6.19 7.05 8.29 ns

tRSTFG RESET Low to Empty/Full Flag Valid 1.69 1.93 2.27 ns

tRSTAF RESET Low to Almost-Empty/Full Flag Valid 6.13 6.98 8.20 ns

tRSTBQ

RESET Low to Data out Low on RD (flow-through) 0.92 1.05 1.23 ns

RESET Low to Data out Low on RD (pipelined) 0.92 1.05 1.23 ns

tREMRSTB RESET Removal 0.29 0.33 0.38 ns

tRECRSTB RESET Recovery 1.50 1.71 2.01 ns

tMPWRSTB RESET Minimum Pulse Width 0.21 0.24 0.29 ns

tCYC Clock Cycle time 3.23 3.68 4.32 ns

FMAX Maximum Frequency for FIFO 310 272 231 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-76

Analog Block

With the Fusion family, Microsemi has introduced the world's first mixed-mode FPGA solution.

Supporting a robust analog peripheral mix, Fusion devices will support a wide variety of applications. It is

this Analog Block that separates Fusion from all other FPGA solutions on the market today.

By combining both flash and high-speed CMOS processes in a single chip, these devices offer the best

of both worlds. The high-performance CMOS is used for building RAM resources. These high-

performance structures support device operation up to 350 MHz. Additionally, the advanced Microsemi

0.13 µm flash process incorporates high-voltage transistors and a high-isolation, triple-well process. Both

of these are suited for the flash-based programmable logic and nonvolatile memory structures.

High-voltage transistors support the integration of analog technology in several ways. They aid in noise

immunity so that the analog portions of the chip can be better isolated from the digital portions,

increasing analog accuracy. Because they support high voltages, Microsemi flash FPGAs can be

connected directly to high-voltage input signals, eliminating the need for external resistor divider

networks, reducing component count, and increasing accuracy. By supporting higher internal voltages,

the Microsemi advanced flash process enables high dynamic range on analog circuitry, increasing

precision and signal–noise ratio. Microsemi flash FPGAs also drive high-voltage outputs, eliminating the

need for external level shifters and drivers.

The unique triple-well process enables the integration of high-performance analog features with

increased noise immunity and better isolation. By increasing the efficiency of analog design, the triple-

well process also enables a smaller overall design size, reducing die size and cost.

The Analog Block consists of the Analog Quad I/O structure, RTC (for details refer to the "Real-Time

Counter System" section on page 2-31), ADC, and ACM. All of these elements are combined in the

single Analog Block macro, with which the user implements this functionality (Figure 2-64).

The Analog Block needs to be reset/reinitialized after the core powers up or the device is programmed.

An external reset/initialize signal, which can come from the internal voltage regulator when it powers up,

must be applied.

Device Architecture

2-77 Revision 8

Figure 2-64 • Analog Block Macro

VAREF

ADCGNDREF

AV0

AC0

AT0

AV9

AC9

AT9

ATRETURN01

ATRETURN9

DENAV0

DENAC0

DAVOUT0

DACOUT0

DATOUT0

DACOUT9

DAVOUT9

DATOUT9

AG1

AG0

AG9

DENAT0

DENAV0

DENAC0

DENAT0

CMSTB0

CSMTB9

GDON0

GDON9

TMSTB0

TMSTB9

MODE[3:0]

TVC[7:0]

STC[7:0]

CHNUMBER[4:0]

TMSTINT

ADCSTART

VAREFSEL

PWRDWN

ADCRESET

BUSY

CALIBRATE

DATAVALID

SAMPLE

RESULT[11:0]

RTCMATCH

RTCXTLMODE

RTCXTLSEL

RTCPSMMATCH

RTCCLK

SYSCLK

ACMWEN ACMRDATA[7:0]

ACMRESET

ACMWDATA

ACMADDR

ACMCLK

Fusion Family of Mixed Signal FPGAs

Revision 8 2-78

Table 2-36 describes each pin in the Analog Block. Each function within the Analog Block will be

explained in detail in the following sections.

Table 2-36 • Analog Block Pin Description

Signal Name

Number

of Bits Direction Function

Location of

Details

VAREF 1 Input/Output Voltage reference for ADC ADC

ADCGNDREF 1 Input External ground reference ADC

MODE[3:0] 4 Input ADC operating mode ADC

SYSCLK 1 Input External system clock

TVC[7:0] 8 Input Clock divide control ADC

STC[7:0] 8 Input Sample time control ADC

ADCSTART 1 Input Start of conversion ADC

PWRDWN 1 Input ADC comparator power-down if 1.

When asserted, the ADC will stop

functioning, and the digital portion of

the analog block will continue

operating. This may result in invalid

status flags from the analog block.

Therefore, Microsemi does not

recommend asserting the PWRDWN

pin.

ADC

ADCRESET 1 Input ADC resets and disables Analog Quad

– active high

ADC

BUSY 1 Output 1 – Running conversion ADC

CALIBRATE 1 Output 1 – Power-up calibration ADC

DATAVALID 1 Output 1 – Valid conversion result ADC

RESULT[11:0] 12 Output Conversion result ADC

TMSTBINT 1 Input Internal temp. monitor strobe ADC

SAMPLE 1 Output 1 – An analog signal is actively being

sampled (stays high during signal

acquisition only)

0 – No analog signal is being sampled

ADC

VAREFSEL 1 Input 0 = Output internal voltage reference

(2.56 V) to VAREF

1 = Input external voltage reference

from VAREF and ADCGNDREF

ADC

CHNUMBER[4:0] 5 Input Analog input channel select Input

multiplexer

ACMCLK 1 Input ACM clock ACM

ACMWEN 1 Input ACM write enable – active high ACM

ACMRESET 1 Input ACM reset – active low ACM

ACMWDATA[7:0] 8 Input ACM write data ACM

ACMRDATA[7:0] 8 Output ACM read data ACM

ACMADDR[7:0] 8 Input ACM address ACM

CMSTB0 to CMSTB9 10 Input Current monitor strobe – 1 per quad,

active high

Analog Quad

Device Architecture

2-79 Revision 8

GDON0 to GDON9 10 Input Control to power MOS – 1 per quad Analog Quad

TMSTB0 to TMSTB9 10 Input Temperature monitor strobe – 1 per

quad; active high

Analog Quad

DAVOUT0, DACOUT0, DATOUT0

DAVOUT9, DACOUT9, DATOUT9

30 Output Digital outputs – 3 per quad Analog Quad

DENAV0, DENAC0, DENAT0 to

DENAV9, DENAC9, DENAT9

30 Input Digital input enables – 3 per quad Analog Quad

AV0 1 Input Analog Quad 0 Analog Quad

AC0 1 Input Analog Quad

AG0 1 Output Analog Quad

AT0 1 Input Analog Quad

ATRETURN01 1 Input Temperature monitor return shared by

Analog Quads 0 and 1

Analog Quad

AV1 1 Input Analog Quad 1 Analog Quad

AC1 1 Input Analog Quad

AG1 1 Output Analog Quad

AT1 1 Input Analog Quad

AV2 1 Input Analog Quad 2 Analog Quad

AC2 1 Input Analog Quad

AG2 1 Output Analog Quad

AT2 1 Input Analog Quad

ATRETURN23 1 Input Temperature monitor return shared by

Analog Quads 2 and 3

Analog Quad

AV3 1 Input Analog Quad 3 Analog Quad

AC3 1 Input Analog Quad

AG3 1 Output Analog Quad

AT3 1 Input Analog Quad

AV4 1 Input Analog Quad 4 Analog Quad

AC4 1 Input Analog Quad

AG4 1 Output Analog Quad

AT4 1 Input Analog Quad

ATRETURN45 1 Input Temperature monitor return shared by

Analog Quads 4 and 5

Analog Quad

AV5 1 Input Analog Quad 5 Analog Quad

AC5 1 Input Analog Quad

AG5 1 Output Analog Quad

AT5 1 Input Analog Quad

AV6 1 Input Analog Quad 6 Analog Quad

AC6 1 Input Analog Quad

Table 2-36 • Analog Block Pin Description (continued)

Signal Name

Number

of Bits Direction Function

Location of

Details

Fusion Family of Mixed Signal FPGAs

Revision 8 2-80

Analog Quad

With the Fusion family, Microsemi introduces the Analog Quad, shown in Figure 2-65 on page 2-81, as

the basic analog I/O structure. The Analog Quad is a four-channel system used to precondition a set of

analog signals before sending it to the ADC for conversion into a digital signal. To maximize the

usefulness of the Analog Quad, the analog input signals can also be configured as LVTTL digital input

signals. The Analog Quad is divided into four sections.

The first section is called the Voltage Monitor Block, and its input pin is named AV. It contains a two-

channel analog multiplexer that allows an incoming analog signal to be routed directly to the ADC or

allows the signal to be routed to a prescaler circuit before being sent to the ADC. The prescaler can be

configured to accept analog signals between –12 V and 0 or between 0 and +12 V. The prescaler circuit

scales the voltage applied to the ADC input pad such that it is compatible with the ADC input voltage

range. The AV pin can also be used as a digital input pin.

The second section of the Analog Quad is called the Current Monitor Block. Its input pin is named AC.

The Current Monitor Block contains all the same functions as the Voltage Monitor Block with one

addition, which is a current monitoring function. A small external current sensing resistor (typically less

than 1 ) is connected between the AV and AC pins and is in series with a power source. The Current

Monitor Block contains a current monitor circuit that converts the current through the external resistor to

a voltage that can then be read using the ADC.

AG6 1 Output Analog Quad

AT6 1 Input Analog Quad

ATRETURN67 1 Input Temperature monitor return shared by

Analog Quads 6 and 7

Analog Quad

AV7 1 Input Analog Quad 7 Analog Quad

AC7 1 Input Analog Quad

AG7 1 Output Analog Quad

AT7 1 Input Analog Quad

AV8 1 Input Analog Quad 8 Analog Quad

AC8 1 Input Analog Quad

AG8 1 Output Analog Quad

AT8 1 Input Analog Quad

ATRETURN89 1 Input Temperature monitor return shared by

Analog Quads 8 and 9

Analog Quad

AV9 1 Input Analog Quad 9 Analog Quad

AC9 1 Input Analog Quad

AG9 1 Output Analog Quad

AT9 1 Input Analog Quad

RTCMATCH 1 Output MATCH RTC

RTCPSMMATCH 1 Output MATCH connected to VRPSM RTC

RTCXTLMODE[1:0] 2 Output Drives XTLOSC RTCMODE[1:0] pins RTC

RTCXTLSEL 1 Output Drives XTLOSC MODESEL pin RTC

RTCCLK 1 Input RTC clock input RTC

Table 2-36 • Analog Block Pin Description (continued)

Signal Name

Number

of Bits Direction Function

Location of

Details

Device Architecture

2-81 Revision 8

The third part of the Analog Quad is called the Gate Driver Block, and its output pin is named AG. This

section is used to drive an external FET. There are two modes available: a High Current Drive mode and

a Current Source Control mode. Both negative and positive voltage polarities are available, and in the

current source control mode, four different current levels are available.

The fourth section of the Analog Quad is called the Temperature Monitor Block, and its input pin name is

AT. This block is similar to the Voltage Monitor Block, except that it has an additional function: it can be

used to monitor the temperature of an external diode-connected transistor. It has a modified prescaler

and is limited to positive voltages only.

The Analog Quad can be configured during design time by Libero SoC; however, the ACM can be used

to change the parameters of any of these I/Os during runtime. This type of change is referred to as a

context switch. The Analog Quad is a modular structure that is replicated to generate the analog I/O

resources. Each Fusion device supports between 5 and 10 Analog Quads.

The analog pads are numbered to clearly identify both the type of pad (voltage, current, gate driver, or

temperature pad) and its corresponding Analog Quad (AV0, AC0, AG0, AT0, AV1, …, AC9, AG9, and

AT9). There are three types of input pads (AVx, ACx, and ATx) and one type of analog output pad (AGx).

Since there can be up to 10 Analog Quads on a device, there can be a maximum of 30 analog input pads

and 10 analog output pads.

Figure 2-65 • Analog Quad

Analog Quad

AV AC AT

Voltage

Monitor Block

Current

Monitor Block

Prescaler Prescaler Prescaler

Digital

Input

Power

MOSFET

Gate Driver

Current

Monitor/Instr

Amplifier

Temperature

Monitor

Digital

Input

Digital

Input

Pads

To Analog MUX To Analog MUX To Analog MUX

To FPGA

(DAVOUTx)

To FPGA

(DACOUTx)

To FPGA

(DATOUTx)

On-Chip

Gate

Driver

Temperature

Monitor Block

Off-Chip

From FPGA

(GDONx)

Fusion Family of Mixed Signal FPGAs

Revision 8 2-82

Voltage Monitor

The Fusion Analog Quad offers a robust set of voltage-monitoring capabilities unique in the FPGA

industry. The Analog Quad comprises three analog input pads— Analog Voltage (AV), Analog Current

(AC), and Analog Temperature (AT)—and a single gate driver output pad, Analog Gate (AG). There are

many common characteristics among the analog input pads. Each analog input can be configured to

connect directly to the input MUX of the ADC. When configured in this manner (Figure 2-66), there will be

no prescaling of the input signal. Care must be taken in this mode not to drive the ADC into saturation by

applying an input voltage greater than the reference voltage. The internal reference voltage of the ADC is

2.56 V. Optionally, an external reference can be supplied by the user. The external reference can be a

maximum of 3.3 V DC.

The Analog Quad offers a wide variety of prescaling options to enable the ADC to resolve the input

signals. Figure 2-67 shows the path through the Analog Quad for a signal that is to be prescaled prior to

conversion. The ADC internal reference voltage and the prescaler factors were selected to make both

prescaling and postscaling of the signals easy binary calculations (refer to Table 2-57 on page 2-130 for

details). When an analog input pad is configured with a prescaler, there will be a 1 M resistor to ground.

This occurs even when the device is in power-down mode. In low power standby or sleep mode (VCC is

OFF, VCC33A is ON, VCCI is ON) or when the resource is not used, analog inputs are pulled down to

ground through a 1 M resistor. The gate driver output is floating (or tristated), and there is no extra

current on VCC33A.

These scaling factors hold true whether the particular pad is configured to accept a positive or negative

voltage. Note that whereas the AV and AC pads support the same prescaling factors, the AT pad

supports a reduced set of prescaling factors and supports positive voltages only.

Figure 2-66 • Analog Quad Direct Connect

Prescaler Prescaler Prescaler

Analog Quad

AV AC AT

Voltage

Monitor Block

Current

Monitor Block

Digital

Input

Power

MOSFET

Gate Driver

Current

Monitor / Instr

Amplifier

Temperature

Monitor

Digital

Input

Digital

Input

Pads

To Analog MUX To Analog MUX To Analog MUX

To FPGA

(DAVOUTx)

To FPGA

(DACOUTx)

To FPGA

(DATOUTx)

On-Chip

Gate

Driver

Temperature

Monitor Block

Off-Chip

From FPGA

(GDONx)

Device Architecture

2-83 Revision 8

Typical scaling factors are given in Table 2-57 on page 2-130, and the gain error (which contributes to the

minimum and maximum) is in Table 2-49 on page 2-117.

Terminology

BW – Bandwidth

BW is a range of frequencies that a Channel can handle.

Channel

A channel is define as an analog input configured as one of the Prescaler range shown in Table 2-57 on

page 2-130. The channel includes the Prescaler circuit and the ADC.

Channel Gain

Channel Gain is a measured of the deviation of the actual slope from the ideal slope. The slope is

measured from the 20% and 80% point.

EQ 1

Channel Gain Error

Channel Gain Error is a deviation from the ideal slope of the transfer function. The Prescaler Gain Error

is expressed as the percent difference between the actual and ideal, as shown in EQ 2.

EQ 2

Figure 2-67 • Analog Quad Prescaler Input Configuration

Prescaler Prescaler Prescaler

Analog Quad

AV AC AT

Voltage

Monitor Block

Current

Monitor Block

Digital

Input

Power

MOSFET

Gate Driver

Current

Monitor / Instr

Amplifier

Temperature

Monitor

Digital

Input

Digital

Input

Pads

To Analog MUX To Analog MUX To Analog MUX

To FPGA

(DAVOUTx)

To FPGA

(DACOUTx)

To FPGA

(DATOUTx)

On-Chip

Gate

Driver

Temperature

Monitor Block

Off-Chip

From FPGA

(GDONx)

Gain Gainactual

Gainideal

-------------------------

ErrorGain (1-Gain) 100%=

Fusion Family of Mixed Signal FPGAs

Revision 8 2-84

Channel Input Offset Error

Channel Offset error is measured as the input voltage that causes the transition from zero to a count of

one. An Ideal Prescaler will have offset equal to ½ of LSB voltage. Offset error is a positive or negative

when the first transition point is higher or lower than ideal. Offset error is expressed in LSB or input

voltage.

Total Channel Error

Total Channel Error is defined as the total error measured compared to the ideal value. Total Channel

Error is the sum of gain error and offset error combined. Figure 2-68 shows how Total Channel Error is

measured.

Total Channel Error is defined as the difference between the actual ADC output and ideal ADC output. In

the example shown in Figure 2-68, the Total Channel Error would be a negative number.

Figure 2-68 • Total Channel Error Example

ADC Output Code

Ideal Output

Input Voltage to Prescaler

Total Channel Error

Channel Gain

Actual Output

Channel Input

Offset Error

}

Device Architecture

2-85 Revision 8

Direct Digital Input

The AV, AC, and AT pads can also be configured as high-voltage digital inputs (Figure 2-69). As these

pads are 12 V–tolerant, the digital input can also be up to 12 V. However, the frequency at which these

pads can operate is limited to 10 MHz.

To enable one of these analog input pads to operate as a digital input, its corresponding Digital Input

Enable (DENAxy) pin on the Analog Block must be pulled High, where x is either V, C, or T (for AV, AC,

or AT pads, respectively) and y is in the range 0 to 9, corresponding to the appropriate Analog Quad.

When the pad is configured as a digital input, the signal will come out of the Analog Block macro on the

appropriate DAxOUTy pin, where x represents the pad type (V for AV pad, C for AC pad, or T for AT pad)

and y represents the appropriate Analog Quad number. Example: If the AT pad in Analog Quad 5 is

configured as a digital input, it will come out on the DATOUT5 pin of the Analog Block macro.

Figure 2-69 • Analog Quad Direct Digital Input Configuration

Analog Quad

AV AC AT

Voltage

Monitor Block

Current

Monitor Block

Digital

Input

Power

MOSFET

Gate Driver

Current

Monitor / Instr

Amplifier

Temperature

Monitor

Digital

Input

Digital

Input

Pads

To Analog MUX To Analog MUX To Analog MUX

To FPGA

(DAVOUTx)

To FPGA

(DACOUTx)

To FPGA

(DATOUTx)

On-Chip

Gate

Driver

Temperature

Monitor Block

Off-Chip

From FPGA

(GDONx)

PrescalerPrescalerPrescaler

Fusion Family of Mixed Signal FPGAs

Revision 8 2-86

Current Monitor

The Fusion Analog Quad is an excellent element for voltage- and current-monitoring applications. In

addition to supporting the same functionality offered by the AV pad, the AC pad can be configured to

monitor current across an external sense resistor (Figure 2-70). To support this current monitor function,

a differential amplifier with 10x gain passes the amplified voltage drop between the AV and AC pads to

the ADC. The amplifier enables the user to use very small resistor values, thereby limiting any impact on

the circuit. This function of the AC pad does not limit AV pad operation. The AV pad can still be

configured for use as a direct voltage input or scaled through the AV prescaler independently of it’s use

as an input to the AC pad’s differential amplifier.

Figure 2-70 • Analog Quad Current Monitor Configuration

PrescalerPrescalerPrescaler

Analog Quad

AV AC AT

Voltage

Monitor Block

Current

Monitor Block

Power

Digital

Input

Power

MOSFET

Gate Driver

Current

Monitor / Instr

Amplifier

Temperature

Monitor

Digital

Input

Digital

Input

Pads

To Analog MUX To Analog MUX To Analog MUX

To FPGA

(DAVOUTx)

To FPGA

(DACOUTx)

To FPGA

(DATOUTx)

On-Chip

Gate

Driver

Temperature

Monitor Block

Off-Chip

From FPGA

(GDONx)

Device Architecture

2-87 Revision 8

To initiate a current measurement, the appropriate Current Monitor Strobe (CMSTB) signal on the AB

macro must be asserted low for at least tCMSLO in order to discharge the previous measurement. Then

CMSTB must be asserted high for at least tCMSET prior to asserting the ADCSTART signal. The CMSTB

must remain high until after the SAMPLE signal is de-asserted by the AB macro. Note that the minimum

sample time cannot be less than tCMSHI. Figure 2-71 shows the timing diagram of CMSTB in relationship

with the ADC control signals.

Figure 2-72 illustrates positive current monitor operation. The differential voltage between AV and AC

goes into the 10× amplifier and is then converted by the ADC. For example, a current of 1.5 A is drawn

from a 10 V supply and is measured by the voltage drop across a 0.050  sense resistor, The voltage

drop is amplified by ten times by the amplifier and then measured by the ADC. The 1.5 A current creates

a differential voltage across the sense resistor of 75 mV. This becomes 750 mV after amplification. Thus,

the ADC measures a current of 1.5 A as 750 mV. Using an ADC with 8-bit resolution and VAREF of 2.56

V, the ADC result is decimal 75. EQ 3 shows how to compute the current from the ADC result.

EQ 3

where

I is the current flowing through the sense resistor

ADC is the result from the ADC

VAREF is the Reference voltage

N is the number of bits

Rsense is the resistance of the sense resistor

Figure 2-71 • Timing Diagram for Current Monitor Strobe

VADC

CMSET

CMSTBx

ADCSTART can be asserted

after this point to start ADC

sampling.

tCMSHI

ADCSTART

CMSLO

IADC VAREF

10 2N

Rsense

=

Fusion Family of Mixed Signal FPGAs

Revision 8 2-88

Care must be taken when choosing the right resistor for current measurement application. Note that

because of the 10× amplification, the maximum measurable difference between the AV and AC pads is

VAREF / 10. A larger AV-to-AC voltage drop will result in ADC saturation; that is, the digital code put out by

the ADC will stay fixed at the full scale value. Therefore, the user must select the external sense resistor

appropriately. Table 2-38 shows recommended resistor values for different current measurement ranges.

When choosing resistor values for a system, there is a trade-off between measurement accuracy and

power consumption. Choosing a large resistor will increase the voltage drop and hence increase

accuracy of the measurement; however the larger voltage drop dissipates more power (P = I2 × R).

The Current Monitor is a unipolar system, meaning that the differential voltage swing must be from 0 V to

VAREF/10. Therefore, the Current Monitor only supports differential voltage where |VAV-VAC| is greater

than 0 V. This results in the requirement that the potential of the AV pad must be larger than the potential

of the AC pad. This is straightforward for positive voltage systems. For a negative voltage system, it

means that the AV pad must be “more negative” than the AC pad. This is shown in Figure 2-73.

In this case, both the AV pad and the AC pad are configured for negative operations and the output of the

differential amplifier still falls between 0 V and VAREF as required.

Figure 2-72 • Positive Current Monitor

0-12 V

SENSE

ACx

AVx

CMSTBx

10 X

Current Monitor

VADC

to Analog MUX

(refer Table 2-3

for MUX chann

number)

Table 2-37 • Recommended Resistor for Different Current Range Measurement

Current Range Recommended Minimum Resistor Value (Ohms)

> 5 mA – 10 mA 10 – 20

> 10 mA – 20 mA 5 – 10

> 20 mA – 50 mA 2.5 – 5

> 50 mA – 100 mA 1 – 2

> 100 mA – 200 mA 0.5 – 1

> 200 mA – 500 mA 0.3 – 0.5

> 500 mA – 1 A 0.1 – 0.2

> 1 A – 2 A 0.05 – 0.1

> 2 A – 4 A 0.025 – 0.05

> 4 A – 8 A 0.0125 – 0.025

> 8 A – 12 A 0.00625 – 0.02

Device Architecture

2-89 Revision 8

Terminology

Accuracy

The accuracy of Fusion Current Monitor is ±2 mV minimum plus 5% of the differential voltage at the

input. The input accuracy can be translated to error at the ADC output by using EQ 4. The 10 V/V gain is

the gain of the Current Monitor Circuit, as described in the "Current Monitor" section on page 2-86. For 8-

bit mode, N = 8, VAREF= 2.56 V, zero differential voltage between AV and AC, the Error (EADC) is equal to

2 LSBs.

EQ 4

where

N is the number of bits

VAREF is the Reference voltage

VAV is the voltage at AV pad

VAC is the voltage at AC pad

Figure 2-73 • Negative Current Monitor

RSENSE

0 to

–10.5 V

AVx ACx

CMSTBx

10 X VADC

Current Monitor

to Analog MUX

(see Table 2-36

for MUXchannel

number)

EADC 2mV 0.05 VAV VAC

–+10VV 2N

VAREF

-----------------

=

Fusion Family of Mixed Signal FPGAs

Revision 8 2-90

Gate Driver

The Fusion Analog Quad includes a Gate Driver connected to the Quad's AG pin (Figure 2-74).

Designed to work with external p- or n-channel MOSFETs, the Gate driver is a configurable current sink

or source and requires an external pull-up or pull-down resistor. The AG supports 4 selectable gate drive

levels: 1 µA, 3 µA, 10 µA, and 30 µA (Figure 2-75 on page 2-91). The AG also supports a High Current

Drive mode in which it can sink 20 mA; in this mode the switching rate is approximately 1.3 MHz with

100 ns turn-on time and 600 ns turn-off time. Modeled on an open-drain-style output, it does not output a

voltage level without an appropriate pull-up or pull-down resistor. If 1 V is forced on the drain, the current

sinking/sourcing will exceed the ability of the transistor, and the device could be damaged.

The AG pad is turned on via the corresponding GDONx pin in the Analog Block macro, where x is the

number of the corresponding Analog Quad for the AG pad to be enabled (GDON0 to GDON9).

The gate-to-source voltage (Vgs) of the external MOSFET is limited to the programmable drive current

times the external pull-up or pull-down resistor value (EQ 5).

Vgs  Ig × (Rpullup or Rpulldown)

EQ 5

Figure 2-74 • Gate Driver

Analog Quad

AV AC AT

Voltage

Monitor Block

Current

Monitor Block

Power Line Side Load Side

Digital

Input

Power

MOSFET

Gate Driver

Current

Monitor / Instr

Amplifier

Temperature

Monitor

Digital

Input

Digital

Input

Pads

To Analog MUX To Analog MUX To Analog MUX

To FPGA

(DAVOUTx)

To FPGA

(DACOUTx)

To FPGA

(DATOUTx)

On-Chip

Gate

Driver

Temperature

Monitor Block

Off-Chip R

pullup

From FPGA

(GDONx)

PrescalerPrescalerPrescaler

Device Architecture

2-91 Revision 8

The rate at which the gate voltage of the external MOSFET slews is determined by the current, Ig,

sourced or sunk by the AG pin and the gate-to-source capacitance, CGS, of the external MOSFET. As an

approximation, the slew rate is given by EQ 6.

dv/dt = Ig / CGS

EQ 6

CGS is not a fixed capacitance but, depending on the circuitry connected to its drain terminal, can vary

significantly during the course of a turn-on or turn-off transient. Thus, EQ 6 on page 2-91 can only be

used for a first-order estimate of the switching speed of the external MOSFET.

Figure 2-75 • Gate Driver Example

High

Current

High

Current

1 μA3 μA 10 μA 30 μA

Fusion Family of Mixed Signal FPGAs

Revision 8 2-92

Temperature Monitor

The final pin in the Analog Quad is the Analog Temperature (AT) pin. The AT pin is used to implement an

accurate temperature monitor in conjunction with an external diode-connected bipolar transistor

(Figure 2-76). For improved temperature measurement accuracy, it is important to use the ATRTN pin for

the return path of the current sourced by the AT pin. Each ATRTN pin is shared between two adjacent

Analog Quads. Additionally, if not used for temperature monitoring, the AT pin can provide functionality

similar to that of the AV pad. However, in this mode only positive voltages can be applied to the AT pin,

and only two prescaler factors are available (16 V and 4 V ranges—refer to Table 2-57 on page 2-130).

Figure 2-76 • Temperature Monitor Quad

Analog Quad

AV AC AT

Voltage

Monitor Block

Current

Monitor Block

Digital

Input

Power

MOSFET

Gate Driver

Current

Monitor / Instr

Amplifier

Temperature

Monitor

Digital

Input

Digital

Input

Pads

To Analog MUX To Analog MUX To Analog MUX

To FPGA

(DAVOUTx)

To FPGA

(DACOUTx)

To FPGA

(DATOUTx)

On-Chip

Gate

Driver

Temperature

Monitor Block

Off-Chip

From FPGA

(GDONx)

Prescaler

PrescalerPrescaler

ATRTN

Discrete

Bipolar

Transistor

Device Architecture

2-93 Revision 8

Fusion uses a remote diode as a temperature sensor. The Fusion Temperature Monitor uses a

differential input; the AT pin and ATRTN (AT Return) pin are the differential inputs to the Temperature

Monitor. There is one Temperature Monitor in each Quad. A simplified block diagram is shown in

Figure 2-77.

The Fusion approach to measuring temperature is forcing two different currents through the diode with a

ratio of 10:1. The switch that controls the different currents is controlled by the Temperature Monitor

Strobe signal, TMSTB. Setting TMSTB to '1' will initiate a Temperature reading. The TMSTB should

remain '1' until the ADC finishes sampling the voltage from the Temperature Monitor. The minimum

sample time for the Temperature Monitor cannot be less than the minimum strobe high time minus the

setup time. Figure 2-78 shows the timing diagram.

Note: When the IEEE 1149.1 Boundary Scan EXTEST instruction is executed, the AG pad drive

strength ceases and becomes a 1 µA sink into the Fusion device.

Figure 2-77 • Block Diagram for Temperature Monitor Circuit

Figure 2-78 • Timing Diagram for the Temperature Monitor Strobe Signal

TMSTBx

VDD33A

ATRTNxy

ATx

12.5 X

∆V

to Analog MUX

(refer Table 2-36

for MUX Channel

Number)

VADC

100

μA

–

VADC

TMSTBx

ADC should s tart

sampling at this point

ADCSTART

tTMSLO

tTMSHI

tTMSSET

Fusion Family of Mixed Signal FPGAs

Revision 8 2-94

The diode’s voltage is measured at each current level and the temperature is calculated based on EQ 7.

EQ 7

where

ITMSLO is the current when the Temperature Strobe is Low, typically 100 µA

ITMSHI is the current when the Temperature Strobe is High, typically 10 µA

VTMSLO is diode voltage while Temperature Strobe is Low

VTMSHI is diode voltage while Temperature Strobe is High

n is the non-ideality factor of the diode-connected transistor. It is typically 1.004 for the Microsemi-

recommended transistor type 2N3904.

K = 1.3806 x 10-23 J/K is the Boltzman constant

Q = 1.602 x 10-19 C is the charge of a proton

When ITMSLO / ITMSHI = 10, the equation can be simplified as shown in EQ 8.

EQ 8

In the Fusion TMB, the ideality factor n for 2N3904 is 1.004 and V is amplified 12.5 times by an internal

amplifier; hence the voltage before entering the ADC is as given in EQ 9.

EQ 9

This means the temperature to voltage relationship is 2.5 mV per degree Kelvin. The unique design of

Fusion has made the Temperature Monitor System simple for the user. When the 10-bit mode ADC is

used, each LSB represents 1 degree Kelvin, as shown in EQ 10. That is, e. 25°C is equal to 293°K and is

represented by decimal 293 counts from the ADC.

EQ 10

If 8-bit mode is used for the ADC resolution, each LSB represents 4 degrees Kelvin; however, the

resolution remains as 1 degree Kelvin per LSB, even for 12-bit mode, due to the Temperature Monitor

design. An example of the temperature data format for 10-bit mode is shown in Tabl e 2 -38 .

VTMSLO VTMSHI

–nkT

-------lnITMSLO

ITMSHI

-----------------





VV

TMSLO VTMSHI

–1.986 10 4–

nT==

VADC V12.52.5 mV KT==

1K2.5 mV 210

2.56 V

-----------------

1 LSB==

Table 2-38 • Temperature Data Format

Temperature Temperature (K) Digital Output (ADC 10-bit mode)

–40°C 233 00 1110 1001

–20°C 253 00 1111 1101

0°C 273 01 0001 0001

1°C 274 01 0001 0010

10 °C 283 01 0001 1011

25°C 298 01 0010 1010

50 °C 323 01 0100 0011

85 °C 358 01 0110 0110

Device Architecture

2-95 Revision 8

Terminology

Resolution

Resolution defines the smallest temperature change Fusion Temperature Monitor can resolve. For ADC

configured as 8-bit mode, each LSB represents 4°C, and 1°C per LSB for 10-bit mode. With 12-bit mode,

the Temperature Monitor can still only resolve 1°C due to Temperature Monitor design.

Offset

The Fusion Temperature Monitor has a systematic offset (Table 2-49 on page 2-117), excluding error due

to board resistance and ideality factor of the external diode. Microsemi provides an IP block (CalibIP) that

is required in order to mitigate the systematic temperature offset. For further details on CalibIP, refer to

the “Temperature, Voltage, and Current Calibration in Fusion FPGAs” chapter of the Fusion FPGA Fabric

User Guide.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-96

Analog-to-Digital Converter Block

At the heart of the Fusion analog system is a programmable Successive Approximation Register (SAR)

ADC. The ADC can support 8-, 10-, or 12-bit modes of operation. In 12-bit mode, the ADC can resolve

500 ksps. All results are MSB-justified in the ADC. The input to the ADC is a large 32:1 analog input

multiplexer. A simplified block diagram of the Analog Quads, analog input multiplexer, and ADC is shown

in Figure 2-79. The ADC offers multiple self-calibrating modes to ensure consistent high performance

both at power-up and during runtime.

Figure 2-79 • ADC Block Diagram

ADC

Analog MUX

(32 to 1)

Temperature

Monitor

Pads

Internal Diode

Digital Output to FPGA

AV0

AC0

AG0

AT0

AV1

AC1

AG1

AT1

AV2

AC2

AG2

AT2

AV3

AC3

AG3

AT3

AV4

AC4

AG4

AT4

AV5

AC5

AG5

AT5

AV6

AC6

AG6

AT6

AV7

AC7

AG7

AT7

AV8

AC8

AG8

AT8

AV9

AC9

AG9

AT9

ATRETURN89

ATRETURN67

ATRETURN45

ATRETURN23

ATRETURN01

Analog

Quad 0

Analog

Quad 4

Analog

Quad 5

Analog

Quad 6

Analog

Quad 7

Analog

Quad 8

Analog

Quad 9

Analog

Quad 3

Analog

Quad 2

Analog

Quad 1

(1.5 V)

These are hardwired

connections within

Analog Quad.

CHNUMBER[4:0]

Device Architecture

2-97 Revision 8

ADC Description

The Fusion ADC is a 12-bit SAR ADC. It offers a wide variety of features for different use models.

Figure 2-80 shows a block diagram of the Fusion ADC.

• Configurable resolution: 8-bit, 10-bit, and 12-bit mode

• DNL: 0.6 LSB for 10-bit mode

• INL: 0.4 LSB for 10-bit mode

• No missing code

• Internal VAREF = 2.56 V

• Maximum Sample Rate = 600 Ksps

• Power-up calibration and dynamic calibration after every sample to compensate for temperature

drift over time

ADC Theory of Operation

An analog-to-digital converter is used to capture discrete samples of a continuous analog voltage and

provide a discrete binary representation of the signal. Analog-to-digital converters are generally

characterized in three ways:

• Input voltage range

• Resolution

• Bandwidth or conversion rate

The input voltage range of an ADC is determined by its reference voltage (VREF). Fusion devices

include an internal 2.56 V reference, or the user can supply an external reference of up to 3.3 V. The

following examples use the internal 2.56 V reference, so the full-scale input range of the ADC is 0 to

2.56 V.

The resolution (LSB) of the ADC is a function of the number of binary bits in the converter. The ADC

approximates the value of the input voltage using 2n steps, where n is the number of bits in the converter.

Each step therefore represents VREF÷ 2n volts. In the case of the Fusion ADC configured for 12-bit

operation, the LSB is 2.56 V / 4096 = 0.625 mV.

Finally, bandwidth is an indication of the maximum number of conversions the ADC can perform each

second. The bandwidth of an ADC is constrained by its architecture and several key performance

characteristics.

Figure 2-80 • ADC Simplified Block Diagram

TVCSYSCLK ADCCLK

Signals from

Analog Quads

CHNUMBER

SAR ADC

STC MODE

RESULT

DATAVALID

BUSY

STATUS

SAMPLE

CALIBRATE

VAREF

Analog

MUX

32 12

Fusion Family of Mixed Signal FPGAs

Revision 8 2-98

There are several popular ADC architectures, each with advantages and limitations.

The analog-to-digital converter in Fusion devices is a switched-capacitor Successive Approximation

to 600 k samples per second (ksps). Built-in bandgap circuitry offers 1% internal voltage reference

accuracy or an external reference voltage can be used.

As shown in Figure 2-81, a SAR ADC contains N capacitors with binary-weighted values.

To begin a conversion, all of the capacitors are quickly discharged. Then VIN is applied to all the

capacitors for a period of time (acquisition time) during which the capacitors are charged to a value very

close to VIN. Then all of the capacitors are switched to ground, and thus –VIN is applied across the

comparator. Now the conversion process begins. First, C is switched to VREF. Because of the binary

weighting of the capacitors, the voltage at the input of the comparator is then shown by EQ 11.

Voltage at input of comparator = –VIN + VREF / 2

EQ 11

If VIN is greater than VREF / 2, the output of the comparator is 1; otherwise, the comparator output is 0.

A register is clocked to retain this value as the MSB of the result. Next, if the MSB is 0, C is switched

back to ground; otherwise, it remains connected to VREF, and C / 2 is connected to VREF. The result at

the comparator input is now either –VIN + VREF / 4 or –VIN + 3 VREF / 4 (depending on the state of the

MSB), and the comparator output now indicates the value of the next most significant bit. This bit is

likewise registered, and the process continues for each subsequent bit until a conversion is completed.

The conversion process requires some acquisition time plus N + 1 ADC clock cycles to complete.

Figure 2-81 • Example SAR ADC Architecture

Comparator

C C / 2 C / 4

C / 2N–2 C / 2N–1

VREF

VIN

Device Architecture

2-99 Revision 8

This process results in a binary approximation of VIN. Generally, there is a fixed interval T, the sampling

period, between the samples. The inverse of the sampling period is often referred to as the sampling

frequency fS = 1 / T. The combined effect is illustrated in Figure 2-82.

Figure 2-82 demonstrates that if the signal changes faster than the sampling rate can accommodate, or if

the actual value of VIN falls between counts in the result, this information is lost during the conversion.

There are several techniques that can be used to address these issues.

First, the sampling rate must be chosen to provide enough samples to adequately represent the input

signal. Based on the Nyquist-Shannon Sampling Theorem, the minimum sampling rate must be at least

twice the frequency of the highest frequency component in the target signal (Nyquist Frequency). For

example, to recreate the frequency content of an audio signal with up to 22 KHz bandwidth, the user

must sample it at a minimum of 44 ksps. However, as shown in Figure 2-82, significant post-processing

of the data is required to interpolate the value of the waveform during the time between each sample.

Similarly, to re-create the amplitude variation of a signal, the signal must be sampled with adequate

resolution. Continuing with the audio example, the dynamic range of the human ear (the ratio of the

amplitude of the threshold of hearing to the threshold of pain) is generally accepted to be 135 dB, and the

dynamic range of a typical symphony orchestra performance is around 85 dB. Most commercial

recording media provide about 96 dB of dynamic range using 16-bit sample resolution. But 16-bit fidelity

does not necessarily mean that you need a 16-bit ADC. As long as the input is sampled at or above the

Nyquist Frequency, post-processing techniques can be used to interpolate intermediate values and

reconstruct the original input signal to within desired tolerances.

If sophisticated digital signal processing (DSP) capabilities are available, the best results are obtained by

implementing a reconstruction filter, which is used to interpolate many intermediate values with higher

resolution than the original data. Interpolating many intermediate values increases the effective number

of samples, and higher resolution increases the effective number of bits in the sample. In many cases,

however, it is not cost-effective or necessary to implement such a sophisticated reconstruction algorithm.

For applications that do not require extremely fine reproduction of the input signal, alternative methods

can enhance digital sampling results with relatively simple post-processing. The details of such

techniques are out of the scope of this chapter; refer to the Improving ADC Results through

Oversampling and Post-Processing of Data white paper for more information.

Figure 2-82 • Conversion Example

LSB

Fusion Family of Mixed Signal FPGAs

Revision 8 2-100

ADC Terminology

Conversion Time

Conversion time is the interval between the release of the hold state (imposed by the input circuitry of a

track-and-hold) and the instant at which the voltage on the sampling capacitor settles to within one LSB

of a new input value.

DNL – Differential Non-Linearity

For an ideal ADC, the analog-input levels that trigger any two successive output codes should differ by

one LSB (DNL = 0). Any deviation from one LSB in defined as DNL (Figure 2-83).

ENOB – Effective Number of Bits

ENOB specifies the dynamic performance of an ADC at a specific input frequency and sampling rate. An

ideal ADC’s error consists only of quantization of noise. As the input frequency increases, the overall

noise (particularly in the distortion components) also increases, thereby reducing the ENOB and SINAD

(also see “Signal-to-Noise and Distortion Ratio (SINAD)”.) ENOB for a full-scale, sinusoidal input

waveform is computed using EQ 12.

EQ 12

FS Error – Full-Scale Error

Full-scale error is the difference between the actual value that triggers that transition to full-scale and the

ideal analog full-scale transition value. Full-scale error equals offset error plus gain error.

Figure 2-83 • Differential Non-Linearity (DNL)

ADC Output Code

Input Voltage to Prescaler

Error = –0.5 LSB

Error = +1 LSB

Ideal Output

Actual Output

ENOB SINAD 1.76–

6.02

-------------------------------------

Device Architecture

2-101 Revision 8

Gain Error

The gain error of an ADC indicates how well the slope of an actual transfer function matches the slope of

the ideal transfer function. Gain error is usually expressed in LSB or as a percent of full-scale (%FSR).

Gain error is the full-scale error minus the offset error (Figure 2-84).

Gain Error Drift

Gain-error drift is the variation in gain error due to a change in ambient temperature, typically expressed

in ppm/°C.

Figure 2-84 • Gain Error

ADC Output Code

Input Voltage to Prescaler

Ideal Output

Actual Output

Gain = 2 LSB

1...11

0...00

Voltage

Fusion Family of Mixed Signal FPGAs

Revision 8 2-102

INL – Integral Non-Linearity

INL is the deviation of an actual transfer function from a straight line. After nullifying offset and gain

errors, the straight line is either a best-fit straight line or a line drawn between the end points of the

transfer function (Figure 2-85).

LSB – Least Significant Bit

In a binary number, the LSB is the least weighted bit in the group. Typically, the LSB is the furthest right

bit. For an ADC, the weight of an LSB equals the full-scale voltage range of the converter divided by 2N,

where N is the converter’s resolution.

EQ 13 shows the calculation for a 10-bit ADC with a unipolar full-scale voltage of 2.56 V:

1 LSB = (2.56 V / 210) = 2.5 mV

EQ 13

No Missing Codes

An ADC has no missing codes if it produces all possible digital codes in response to a ramp signal

applied to the analog input.

Figure 2-85 • Integral Non-Linearity (INL)

ADC Output Code

Input Voltage to Prescaler

INL = +0.5 LSB

INL = +1 LSB

Ideal Output

Actual Output

Device Architecture

2-103 Revision 8

Offset Error

Offset error indicates how well the actual transfer function matches the ideal transfer function at a single

point. For an ideal ADC, the first transition occurs at 0.5 LSB above zero. The offset voltage is measured

by applying an analog input such that the ADC outputs all zeroes and increases until the first transition

occurs (Figure 2-86).

Resolution

ADC resolution is the number of bits used to represent an analog input signal. To more accurately

replicate the analog signal, resolution needs to be increased.

Sampling Rate

Sampling rate or sample frequency, specified in samples per second (sps), is the rate at which an ADC

acquires (samples) the analog input.

SNR – Signal-to-Noise Ratio

SNR is the ratio of the amplitude of the desired signal to the amplitude of the noise signals at a given

point in time. For a waveform perfectly reconstructed from digital samples, the theoretical maximum SNR

(EQ 14) is the ratio of the full-scale analog input (RMS value) to the RMS quantization error (residual

error). The ideal, theoretical minimum ADC noise is caused by quantization error only and results directly

from the ADC’s resolution (N bits):

EQ 14

SINAD – Signal-to-Noise and Distortion

SINAD is the ratio of the rms amplitude to the mean value of the root-sum-square of the all other spectral

components, including harmonics, but excluding DC. SINAD is a good indication of the overall dynamic

performance of an ADC because it includes all components which make up noise and distortion.

Total Harmonic Distortion

THD measures the distortion content of a signal, and is specified in decibels relative to the carrier (dBc).

THD is the ratio of the RMS sum of the selected harmonics of the input signal to the fundamental itself.

Only harmonics within the Nyquist limit are included in the measurement.

Figure 2-86 • Offset Error

ADC Output Code

Input Voltage to Prescaler

Ideal Output

Offset Error = 1.5 LSB

Actual Output

0...00

0...01

SNRdB[MAX] 6.02dB N1.76dB

+=

Fusion Family of Mixed Signal FPGAs

Revision 8 2-104

TUE – Total Unadjusted Error

TUE is a comprehensive specification that includes linearity errors, gain error, and offset error. It is the

worst-case deviation from the ideal device performance. TUE is a static specification (Figure 2-87).

ADC Operation

Once the ADC has powered up and been released from reset, ADCRESET, the ADC will initiate a

calibration routine designed to provide optimal ADC performance. The Fusion ADC offers a robust

calibration scheme to reduce integrated offset and linearity errors. The offset and linearity errors of the

main capacitor array are compensated for with an 8-bit calibration capacitor array. The offset/linearity

error calibration is carried out in two ways. First, a power-up calibration is carried out when the ADC

comes out of reset. This is initiated by the CALIBRATE output of the Analog Block macro and is a fixed

number of ADC_CLK cycles (3,840 cycles), as shown in Figure 2-89 on page 2-111. In this mode, the

linearity and offset errors of the capacitors are calibrated.

To further compensate for drift and temperature-dependent effects, every conversion is followed by post-

calibration of either the offset or a bit of the main capacitor array. The post-calibration ensures that, over

time and with temperature, the ADC remains consistent.

After both calibration and the setting of the appropriate configurations, as explained above, the ADC is

ready for operation. Setting the ADCSTART signal high for one clock period will initiate the sample and

conversion of the analog signal on the channel as configured by CHNUMBER[4:0]. The status signals

SAMPLE and BUSY will show when the ADC is sampling and converting (Figure 2-91 on page 2-112).

Both SAMPLE and BUSY will initially go high. After the ADC has sampled and held the analog signal,

SAMPLE will go low. After the entire operation has completed and the analog signal is converted, BUSY

will go low and DATAVALID will go high. This indicates that the digital result is available on the

RESULT[11:0] pins.

DATAVALID will remain high until a subsequent ADCSTART is issued. The DATAVALID goes low on the

rising edge of SYSCLK as shown in Figure 2-90 on page 2-112. The RESULT signals will be kept

constant until the ADC finishes the subsequent sample. The next sampled RESULT will be available

when DATAVALID goes high again. It is ideal to read the RESULT when DATAVALID is '1'. The RESULT

is latched and remains unchanged until the next DATAVLAID rising edge.

Figure 2-87 • Total Unadjusted Error (TUE)

ADC Output Code

Input Voltage to Prescaler

IDEAL OUTPUT

TUE = ±0.5 LSB

Device Architecture

2-105 Revision 8

ADC Input Multiplexer

At the input to the Fusion ADC is a 32:1 multiplexer. Of the 32 input channels, up to 30 are user

definable. Two of these channels are hardwired internally. Channel 31 connects to an internal

temperature diode so the temperature of the Fusion device itself can be monitored. Channel 0 is wired to

the FPGA’s 1.5 V VCC supply, enabling the Fusion device to monitor its own power supply. Doing this

internally makes it unnecessary to use an analog I/O to support these functions. The balance of the MUX

inputs are connected to Analog Quads (see the "Analog Quad" section on page 2-80). Tab l e 2-40 defines

which Analog Quad inputs are associated with which specific analog MUX channels. The number of

Analog Quads present is device-dependent; refer to the family list in the "Fusion Family" table on page I

of this datasheet for the number of quads per device. Regardless of the number of quads populated in a

device, the internal connections to both VCC and the internal temperature diode remain on Channels 0

and 31, respectively. To sample the internal temperature monitor, it must be strobed (similar to the AT

pads). The TMSTBINT pin on the Analog Block macro is the control for strobing the internal temperature

measurement diode.

To determine which channel is selected for conversion, there is a five-pin interface on the Analog Block,

CHNUMBER[4:0], defined in Ta ble 2- 39.

Table 2-40 shows the correlation between the analog MUX input channels and the analog input pins.

Table 2-39 • Channel Selection

Channel Number CHNUMBER[4:0]

000000

100001

200010

300011

30 11110

31 11111

Table 2-40 • Analog MUX Channels

Analog MUX Channel Signal Analog Quad Number

0 Vcc_analog

1AV0

Analog Quad 02AC0

3AT0

4AV1

Analog Quad 15AC1

6AT1

7AV2

Analog Quad 28AC2

9AT2

10 AV3

Analog Quad 311 AC3

12 AT3

13 AV4

Analog Quad 414 AC4

15 AT4

Fusion Family of Mixed Signal FPGAs

Revision 8 2-106

The ADC can be powered down independently of the FPGA core, as an additional control or for power-

saving considerations, via the PWRDWN pin of the Analog Block. The PWRDWN pin controls only the

comparators in the ADC.

ADC Modes

The Fusion ADC can be configured to operate in 8-, 10-, or 12-bit modes, power-down after conversion,

and dynamic calibration. This is controlled by MODE[3:0], as defined in Table 2-41 on page 2-106.

The output of the ADC is the RESULT[11:0] signal. In 8-bit mode, the Most Significant 8 Bits

RESULT[11:4] are used as the ADC value and the Least Significant 4 Bits RESULT[3:0] are logical '0's.

In 10-bit mode, RESULT[11:2] are used the ADC value and RESULT[1:0] are logical 0s.

16 AV5

Analog Quad 517 AC5

18 AT5

19 AV6

Analog Quad 620 AC6

21 AT6

22 AV7

Analog Quad 723 AC7

24 AT7

25 AV8

Analog Quad 826 AC8

27 AT8

28 AV9

Analog Quad 929 AC9

30 AT9

31 Internal temperature monitor

Table 2-40 • Analog MUX Channels (continued)

Analog MUX Channel Signal Analog Quad Number

Table 2-41 • Mode Bits Function

Name Bits Function

MODE 3 0 – Internal calibration after every conversion; two ADCCLK cycles are used after the conversion.

1 – No calibration after every conversion

MODE 2 0 – Power-down after conversion

1 – No Power-down after conversion

MODE 1:0 00 – 10-bit

01 – 12-bit

10 – 8-bit

11 – Unused

Device Architecture

2-107 Revision 8

Integrated Voltage Reference

The Fusion device has an integrated on-chip 2.56 V reference voltage for the ADC. The value of this

reference voltage was chosen to make the prescaling and postscaling factors for the prescaler blocks

change in a binary fashion. However, if desired, an external reference voltage of up to 3.3 V can be

connected between the VAREF and ADCGNDREF pins. The VAREFSEL control pin is used to select the

reference voltage.

ADC Clock

The speed of the ADC depends on its internal clock, ADCCLK, which is not accessible to users. The

ADCCLK is derived from SYSCLK. Input signal TVC[7:0], Time Divider Control, determines the speed of

the ADCCLK in relationship to SYSCLK, based on EQ 15.

EQ 15

TVC: Time Divider Control (0–255)

tADCCLK is the period of ADCCLK, and must be between 0.5 MHz and 10 MHz

tSYSCLK is the period of SYSCLK

The frequency of ADCCLK, fADCCLK, must be within 0.5 Hz to 10 MHz.

The inputs to the ADC are synchronized to SYSCLK. A conversion is initiated by asserting the

ADCSTART signal on a rising edge of SYSCLK. Figure 2-90 on page 2-112 and Figure 2-91 on

page 2-112 show the timing diagram for the ADC.

Acquisition Time or Sample Time Control

Acquisition time (tSAMPLE) specifies how long an analog input signal has to charge the internal capacitor

array. Figure 2-88 shows a simplified internal input sampling mechanism of a SAR ADC.

The internal impedance (ZINAD), external source resistance (RSOURCE), and sample capacitor (CINAD)

form a simple RC network. As a result, the accuracy of the ADC can be affected if the ADC is given

insufficient time to charge the capacitor. To resolve this problem, you can either reduce the source

resistance or increase the sampling time by changing the acquisition time using the STC signal.

Table 2-42 • VAREF Bit Function

Name Bit Function

VAREF 0 Reference voltage selection

0 – Internal voltage reference selected. VAREF pin outputs 2.56 V.

1 – Input external voltage reference from VAREF and ADCGNDREF

tADCCLK 41TVC+tSYSCLK

=

Table 2-43 • TVC Bits Function

Name Bits Function

TVC [7:0] SYSCLK divider control

Figure 2-88 • Simplified Sample and Hold Circuitry

Sample and Hold

ZINAD

CINAD

Rsource

Fusion Family of Mixed Signal FPGAs

Revision 8 2-108

EQ 16 through EQ 18 can be used to calculate the acquisition time required for a given input. The STC

signal gives the number of sample periods in ADCCLK for the acquisition time of the desired signal. If the

actual acquisition time is higher than the STC value, the settling time error can affect the accuracy of the

ADC, because the sampling capacitor is only partially charged within the given sampling cycle. Example

acquisition times are given in Table 2-44 and Table 2-45. When controlling the sample time for the ADC

along with the use of the active bipolar prescaler, current monitor, or temperature monitor, the minimum

sample time(s) for each must be obeyed. EQ 19 can be used to determine the appropriate value of STC.

You can calculate the minimum actual acquisition time by using EQ 16:

VOUT = VIN(1 – e–t/RC)

EQ 16

For 0.5 LSB gain error, VOUT should be replaced with (VIN –(0.5 × LSB Value)):

(VIN – 0.5 × LSB Value) = VIN(1 – e–t/RC)

EQ 17

where VIN is the ADC reference voltage (VREF)

Solving EQ 17:

t = RC x ln (VIN / (0.5 x LSB Value))

EQ 18

where R = ZINAD + RSOURCE and C = CINAD.

Calculate the value of STC by using EQ 19.

tSAMPLE = (2 + STC) x (1 / ADCCLK) or tSAMPLE = (2 + STC) x (ADC Clock Period)

EQ 19

where ADCCLK = ADC clock frequency in MHz.

tSAMPLE = 0.449 µs from bit resolution in Table 2-44.

ADC Clock frequency = 10 MHz or a 100 ns period.

STC = (tSAMPLE / (1 / 10 MHz)) – 2 = 4.49 – 2 = 2.49.

You must round up to 3 to accommodate the minimum sample time.

Sample Phase

A conversion is performed in three phases. In the first phase, the analog input voltage is sampled on the

input capacitor. This phase is called sample phase. During the sample phase, the output signals BUSY

and SAMPLE change from '0' to '1', indicating the ADC is busy and sampling the analog signal. The

sample time can be controlled by input signals STC[7:0]. The sample time can be calculated by EQ 20.

When controlling the sample time for the ADC along with the use of Prescaler or Current Monitor or

Temperature Monitor, the minimum sample time for each must be obeyed.

Table 2-44 • Acquisition Time Example with VAREF = 2.56 V

VIN = 2.56V, R = 4K (RSOURCE ~ 0), C = 18 pF

Resolution LSB Value (mV) Min. Sample/Hold Time for 0.5 LSB (µs)

810 0.449

10 2.5 0.549

12 0.625 0.649

Table 2-45 • Acquisition Time Example with VAREF = 3.3 V

VIN = 3.3V, R = 4K (RSOURCE ~ 0), C = 18 pF

Resolution LSB Value (mV) Min. Sample/Hold time for 0.5 LSB (µs)

8 12.891 0.449

10 3.223 0.549

12 0.806 0.649

Device Architecture

2-109 Revision 8

Refer to Table 2-46 on page 2-109 and the "Acquisition Time or Sample Time Control" section on

page 2-107

EQ 20

STC: Sample Time Control value (0–255)

tSAMPLE is the sample time

Sample time is computed based on the period of ADCCLK.

Distribution Phase

The second phase is called the distribution phase. During distribution phase, the ADC computes the

equivalent digital value from the value stored in the input capacitor. In this phase, the output signal

SAMPLE goes back to '0', indicating the sample is completed; but the BUSY signal remains '1', indicating

the ADC is still busy for distribution. The distribution time depends strictly on the number of bits. If the

ADC is configured as a 10-bit ADC, then 10 ADCCLK cycles are needed. EQ 8 describes the distribution

time.

EQ 21

N: Number of bits

Post-Calibration Phase

The last phase is the post-calibration phase. This is an optional phase. The post-calibration phase takes

two ADCCLK cycles. The output BUSY signal will remain '1' until the post-calibration phase is completed.

If the post-calibration phase is skipped, then the BUSY signal goes to '0' after distribution phase. As soon

as BUSY signal goes to '0', the DATAVALID signal goes to '1', indicating the digital result is available on

the RESULT output signals. DATAVAILD will remain '1' until the next ADCSTART is asserted. Microsemi

recommends enabling post-calibration to compensate for drift and temperature-dependent effects. This

ensures that the ADC remains consistent over time and with temperature. The post-calibration phase is

enabled by bit 3 of the Mode register. EQ 9 describes the post-calibration time.

EQ 22

MODE[3]: Bit 3 of the Mode register, described in Table 2-41 on page 2-106.

The calculation for the conversion time for the ADC is summarized in EQ 23.

tconv = tsync_read + tsample + tdistrib + tpost-cal + tsync_write

EQ 23

tconv: conversion time

tsync_read: maximum time for a signal to synchronize with SYSCLK. For calculation purposes, the

worst case is a period of SYSCLK, tSYSCLK.

tsample: Sample time

tdistrib: Distribution time

tpost-cal: Post-calibration time

tsync_write: Maximum time for a signal to synchronize with SYSCLK. For calculation purposes, the

worst case is a period of SYSCLK, tSYSCLK.

tsample 2STC+tADCCLK

=

Table 2-46 • STC Bits Function

Name Bits Function

STC [7:0] Sample time control

tdistrib Nt

ADCCLK

=

tpost-cal MODE 3 2t

ADCCLK

=

Fusion Family of Mixed Signal FPGAs

Revision 8 2-110

Intra-Conversion

Performing a conversion during power-up calibration is possible but should be avoided, since the

performance is not guaranteed, as shown in Table 2-49 on page 2-117. This is described as

intra-conversion. Figure 2-92 on page 2-113 shows intra-conversion, (conversion that starts during

power-up calibration).

Injected Conversion

A conversion can be interrupted by another conversion. Before the current conversion is finished, a

second conversion can be started by issuing a pulse on signal ADCSTART. When a second conversion

is issued before the current conversion is completed, the current conversion would be dropped and the

ADC would start the second conversion on the rising edge of the SYSCLK. This is known as injected

conversion. Since the ADC is synchronous, the minimum time to issue a second conversion is two clock

cycles of SYSCLK after the previous one. Figure 2-93 on page 2-113 shows injected conversion,

(conversion that starts before a previously started conversion is finished). The total time for calibration

still remains 3,840 ADCCLK cycles.

ADC Example

This example shows how to choose the correct settings to achieve the fastest sample time in 10-bit mode

for a system that runs at 66 MHz. Assume the acquisition times defined in Table 2-44 on page 2-108 for

10-bit mode, which gives 0.549 µs as a minimum hold time.

The period of SYSCLK: tSYSCLK = 1/66 MHz = 0.015 µs

Choosing TVC between 1 and 33 will meet the maximum and minimum period for the ADCCLK

requirement. A higher TVC leads to a higher ADCCLK period.

The minimum TVC is chosen so that tdistrib and tpost-cal can be run faster. The period of ADCCLK with a

TVC of 1 can be computed by EQ 24.

EQ 24

The STC value can now be computed by using the minimum sample/hold time from Table 2-44 on

page 2-108, as shown in EQ 25.

EQ 25

You must round up to 3 to accommodate the minimum sample time requirement. The actual sample time,

tsample, with an STC of 3, is now equal to 0.6 µs, as shown in EQ 26

EQ 26

Microsemi recommends post-calibration for temperature drift over time, so post-calibration is enabled.

The post-calibration time, tpost-cal, can be computed by EQ 27. The post-calibration time is 0.24 µs.

EQ 27

The distribution time, tdistrib, is equal to 1.2 µs and can be computed as shown in EQ 28 (N is number of

bits, referring back to EQ 8 on page 2-94).

EQ 28

The total conversion time can now be summated, as shown in EQ 29 (referring to EQ 23 on page 2-109).

tsync_read + tsample + tdistrib + tpost-cal + tsync_write = (0.015 + 0.60 + 1.2 + 0.24 + 0.015) µs = 2.07 µs

EQ 29

tADCCLK 41TVC+tSYSCLK

411+0.015 µs0.12 µs===

STC tsample

tADCCLK

-------------------- 2–0.549 µs

0.12 µs

-----------------------2–4.575 2–2.575== ==

tsample 2STC+tADCCLK

23+tADCCLK

5 0.12 µs0.6 µs====

tpost-cal 2t

ADCCLK

0.24 µs==

tdistrib Nt

ADCCLK

10 0.121.2 µs===

Device Architecture

2-111 Revision 8

The optimal setting for the system running at 66 MHz with an ADC for 10-bit mode chosen is shown in

Table 2-47:

Timing Diagrams

Table 2-47 • Optimal Setting at 66 MHz in 10-Bit Mode

TVC[7:0] = 1 = 0x01

STC[7:0] = 3 = 0x03

MODE[3:0] = b'0100 = 0x4*

Note: No power-down after every conversion is chosen in this case; however, if the application is power-sensitive,

the MODE[2] can be set to '0', as described above, and it will not affect any performance.

Note: *Refer to EQ 15 on page 2-107 for the calculation on the period of ADCCLK, tADCCLK.

Figure 2-89 • Power-Up Calibration Status Signal Timing Diagram

SYSCLK

ADCRESET

CALIBRATE

tREMCLR

tCK2QCAL tCK2QCAL

TVC[7:0]

tSUTVC tHDTVC

tCAL = 3,840 tADCCLK*

tRECCLR

Fusion Family of Mixed Signal FPGAs

Revision 8 2-112

Standard Conversion

Figure 2-90 • Input Setup Time

SYSCLK

ADCSTART

MINSYSCLK

MPWSYSCLK

tHDADCSTART

tSUADCSTART

MODE[3:0]

TVC[7:0]

STC[7:0]

VAREF

HNUMBER[7:0]

tSUMODE

tSUTVC

tSUSTC

tSUCHNUM

tSUVAREFSEL

tHDMODE

tHDTVC

tHDSTC

tHDVAREFSEL

tHDCHNUM

Notes:

1. Refer to EQ 20 on page 2-109 for the calculation on the sample time, tSAMPLE.

2. See EQ 23 on page 2-109 for calculation of the conversion time, tCONV.

3. Minimum time to issue an ADCSTART after DATAVALID is 1 SYSCLK period

Figure 2-91 • Standard Conversion Status Signal Timing Diagram

SYSCLK

ADCSTART

BUSY

SAMPLE

DATAVALID

HDADCSTART

SUADCSTART

CK2QBUSY

CK2QSAMPLE

CK2QVAL

SAMPLE

CONV

ADC_RESULT[11:0]

CLK2RESULT

1st Sample Result

CK2QVAL

2nd Sample Result

DATA2START

Device Architecture

2-113 Revision 8

Intra-Conversion

Injected Conversion

Note: *tCONV represents the conversion time of the second conversion. See EQ 23 on page 2-109 for calculation of the

conversion time, tCONV.

Figure 2-92 • Intra-Conversion Timing Diagram

SYSCLK

ADCSTART

BUSY

SAMPLE

DATAVALID

CK2QSAMPLE

CK2QVAL

CONV

CLR2QVAL

CK2QBUSY

ADCRESET

CALIBRATE

CK2QCAL

Interrupts Power-Up Calibration Resumes Power-Up Calibration

Note: *See EQ 23 on page 2-109 for calculation on the conversion time, tCONV.

Figure 2-93 • Injected Conversion Timing Diagram

SYSCLK

ADCSTART

BUSY

SAMPLE

DATAVALID

CK2QSAMPLE

CK2QVAL

CONV

1st Conversion

1st Start 2nd Start

1st Conversion Cancelled,

2nd Conversion

CK2QVAL

CK2QBUSY

CK2QSAMPLE

Fusion Family of Mixed Signal FPGAs

Revision 8 2-114

ADC Interface Timing

Table 2-48 • ADC Interface Timing

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V

Parameter Description –2 –1 Std. Units

tSUMODE Mode Pin Setup Time 0.56 0.64 0.75 ns

tHDMODE Mode Pin Hold Time 0.26 0.29 0.34 ns

tSUTVC Clock Divide Control (TVC) Setup Time 0.68 0.77 0.90 ns

tHDTVC Clock Divide Control (TVC) Hold Time 0.32 0.36 0.43 ns

tSUSTC Sample Time Control (STC) Setup Time 1.58 1.79 2.11 ns

tHDSTC Sample Time Control (STC) Hold Time 1.27 1.45 1.71 ns

tSUVAREFSEL Voltage Reference Select (VAREFSEL) Setup Time 0.00 0.00 0.00 ns

tHDVAREFSEL Voltage Reference Select (VAREFSEL) Hold Time 0.67 0.76 0.89 ns

tSUCHNUM Channel Select (CHNUMBER) Setup Time 0.90 1.03 1.21 ns

tHDCHNUM Channel Select (CHNUMBER) Hold Time 0.00 0.00 0.00 ns

tSUADCSTART Start of Conversion (ADCSTART) Setup Time 0.75 0.85 1.00 ns

tHDADCSTART Start of Conversion (ADCSTART) Hold Time 0.43 0.49 0.57 ns

tCK2QBUSY Busy Clock-to-Q 1.33 1.51 1.78 ns

tCK2QCAL Power-Up Calibration Clock-to-Q 0.63 0.71 0.84 ns

tCK2QVAL Valid Conversion Result Clock-to-Q 3.12 3.55 4.17 ns

tCK2QSAMPLE Sample Clock-to-Q 0.22 0.25 0.30 ns

tCK2QRESULT Conversion Result Clock-to-Q 2.53 2.89 3.39 ns

tCLR2QBUSY Busy Clear-to-Q 2.06 2.35 2.76 ns

tCLR2QCAL Power-Up Calibration Clear-to-Q 2.15 2.45 2.88 ns

tCLR2QVAL Valid Conversion Result Clear-to-Q 2.41 2.74 3.22 ns

tCLR2QSAMPLE Sample Clear-to-Q 2.17 2.48 2.91 ns

tCLR2QRESULT Conversion result Clear-to-Q 2.25 2.56 3.01 ns

tRECCLR Recovery Time of Clear 0.00 0.00 0.00 ns

tREMCLR Removal Time of Clear 0.63 0.72 0.84 ns

tMPWSYSCLK Clock Minimum Pulse Width for the ADC 4.00 4.00 4.00 ns

tFMAXSYSCLK Clock Maximum Frequency for the ADC 100.00 100.00 100.00 MHz

Device Architecture

2-115 Revision 8

Typical Performance Characteristics

Figure 2-94 • Temperature Error

Figure 2-95 • Effect of External Sensor Capacitance

0.5

1.5

2.5

3.5

–40 10 60 110

Temperature Errror vs. Die Temperature

Temperature Error (°C)

Temperature (°C)

Temperature Error vs. Interconnect Capacitance

-7

-6

-5

-4

-3

-2

-1

0 500 1000 1500 2000

Capacitance (pF )

Temperature Error (°C)

Fusion Family of Mixed Signal FPGAs

Revision 8 2-116

Figure 2-96 • Temperature Reading Noise When Averaging is Used

Temperature Reading Noise RMS vs. Averaging

Number of Averages

Noise RMS (°C)

1 10 100 1000 10000

Device Architecture

2-117 Revision 8

Analog System Characteristics

Table 2-49 • Analog Channel Specifications

Commercial Temperature Range Conditions, TJ = 85°C (unless noted otherwise),

Typical: VCC33A = 3.3 V, VCC = 1.5 V

Parameter Description Condition Min. Typ. Max. Units

Voltage Monitor Using Analog Pads AV, AC and AT (using prescaler)

Input Voltage

(Prescaler)

Refer to Table 3-2 on page 3-3

VINAP Uncalibrated Gain and

Offset Errors

Refer to Table 2-51 on

page 2-122

Calibrated Gain and

Offset Errors

Refer to Table 2-52 on

page 2-123

Bandwidth1 100 KHz

Input Resistance Refer to Table 3-3 on page 3-4

Scaling Factor Prescaler modes (Table 2-57 on

page 2-130)

Sample Time 10 µs

Current Monitor Using Analog Pads AV and AC

VRSM1Maximum Differential

Input Voltage

VAREF / 10 mV

Resolution Refer to "Current Monitor"

section

Common Mode Range – 10.5 to +12 V

CMRR Common Mode

Rejection Ratio

DC – 1 KHz 60 dB

1 KHz - 10 KHz 50 dB

> 10 KHz 30 dB

tCMSHI Strobe High time ADC

conv.

time

200 µs

tCMSHI Strobe Low time 5 µs

tCMSHI Settling time 0.02 µs

Accuracy Input differential voltage > 50 mV –2 –(0.05 x

VRSM) to +2 +

(0.05 x VRSM)

Notes:

1. VRSM is the maximum voltage drop across the current sense resistor.

2. Analog inputs used as digital inputs can tolerate the same voltage limits as the corresponding analog pad. There is no

reliability concern on digital inputs as long as VIND does not exceed these limits.

3. VIND is limited to VCC33A + 0.2 to allow reaching 10 MHz input frequency.

4. An averaging of 1,024 samples (LPF setting in Analog System Builder) is required and the maximum capacitance

allowed across the AT pins is 500 pF.

5. The temperature offset is a fixed positive value.

6. The high current mode has a maximum power limit of 20 mW. Appropriate current limit resistors must be used, based on

voltage on the pad.

7. When using SmartGen Analog System Builder, CalibIP is required to obtain specified offset. For further details on

CalibIP, refer to the “Temperature, Voltage, and Current Calibration in Fusion FPGAs” chapter of the Fusion FPGA

Fabric User Guide.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-118

Temperature Monitor Using Analog Pad AT

External

Temperature

Monitor

(external diode

2N3904,

TJ = 25°C)4

Resolution 8-bit ADC 4 °C

10-bit ADC 1 °C

12-bit ADC 0.25 °C

Systematic Offset5AFS090, AFS250, AFS600,

AFS1500, uncalibrated7

5°C

AFS090, AFS250, AFS600,

AFS1500, calibrated7

±5 °C

Accuracy ±3 ±5 °C

External Sensor Source

Current

High level, TMSTBx = 0 10 µA

Low level, TMSTBx = 1 100 µA

Max Capacitance on AT

pad

1.3 nF

Internal

Temperature

Monitor

Resolution 8-bit ADC 4 °C

10-bit ADC 1 °C

12-bit ADC 0.25 °C

Systematic Offset5AFS09075°C

AFS250, AFS600, AFS1500711 °C

Accuracy ±3 ±5 °C

tTMSHI Strobe High time 10 105 µs

tTMSLO Strobe Low time 5 µs

tTMSSET Settling time 5 µs

Table 2-49 • Analog Channel Specifications (continued)

Commercial Temperature Range Conditions, TJ = 85°C (unless noted otherwise),

Typical: VCC33A = 3.3 V, VCC = 1.5 V

Parameter Description Condition Min. Typ. Max. Units

Notes:

1. VRSM is the maximum voltage drop across the current sense resistor.

2. Analog inputs used as digital inputs can tolerate the same voltage limits as the corresponding analog pad. There is no

reliability concern on digital inputs as long as VIND does not exceed these limits.

3. VIND is limited to VCC33A + 0.2 to allow reaching 10 MHz input frequency.

4. An averaging of 1,024 samples (LPF setting in Analog System Builder) is required and the maximum capacitance

allowed across the AT pins is 500 pF.

5. The temperature offset is a fixed positive value.

6. The high current mode has a maximum power limit of 20 mW. Appropriate current limit resistors must be used, based on

voltage on the pad.

7. When using SmartGen Analog System Builder, CalibIP is required to obtain specified offset. For further details on

CalibIP, refer to the “Temperature, Voltage, and Current Calibration in Fusion FPGAs” chapter of the Fusion FPGA

Fabric User Guide.

Device Architecture

2-119 Revision 8

Digital Input using Analog Pads AV, AC and AT

VIND2,3 Input Voltage Refer to Table 3-2 on page 3-3

VHYSDIN Hysteresis 0.3 V

VIHDIN Input High 1.2 V

VILDIN Input Low 0.9 V

VMPWDIN Minimum Pulse With 50 ns

FDIN Maximum Frequency 10 MHz

ISTBDIN Input Leakage Current 2 µA

IDYNDIN Dynamic Current 20 µA

tINDIN Input Delay 10 ns

Gate Driver Output Using Analog Pad AG

VG Voltage Range Refer to Table 3-2 on page 3-3

IG Output Current Drive High Current Mode6 at 1.0 V ±20 mA

Low Current Mode: ±1 µA 0.8 1.0 1.3 µA

Low Current Mode: ±3 µA 2.0 2.7 3.3 µA

Low Current Mode: ± 10 µA 7.4 9.0 11.5 µA

Low Current Mode: ± 30 µA 21.0 27.0 32.0 µA

IOFFG Maximum Off Current 100 nA

FGMaximum switching rate High Current Mode6 at 1.0 V, 1

k resistive load

1.3 MHz

Low Current Mode:

±1 µA, 3 M resistive load

3KHz

Low Current Mode:

±3 µA, 1 M resistive load

7KHz

Low Current Mode:

±10 µA, 300 k resistive load

25 KHz

Low Current Mode:

±30 µA, 105 k resistive load

78 KHz

Table 2-49 • Analog Channel Specifications (continued)

Commercial Temperature Range Conditions, TJ = 85°C (unless noted otherwise),

Typical: VCC33A = 3.3 V, VCC = 1.5 V

Parameter Description Condition Min. Typ. Max. Units

Notes:

1. VRSM is the maximum voltage drop across the current sense resistor.

2. Analog inputs used as digital inputs can tolerate the same voltage limits as the corresponding analog pad. There is no

reliability concern on digital inputs as long as VIND does not exceed these limits.

3. VIND is limited to VCC33A + 0.2 to allow reaching 10 MHz input frequency.

4. An averaging of 1,024 samples (LPF setting in Analog System Builder) is required and the maximum capacitance

allowed across the AT pins is 500 pF.

5. The temperature offset is a fixed positive value.

6. The high current mode has a maximum power limit of 20 mW. Appropriate current limit resistors must be used, based on

voltage on the pad.

7. When using SmartGen Analog System Builder, CalibIP is required to obtain specified offset. For further details on

CalibIP, refer to the “Temperature, Voltage, and Current Calibration in Fusion FPGAs” chapter of the Fusion FPGA

Fabric User Guide.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-120

Table 2-50 • ADC Characteristics in Direct Input Mode

Commercial Temperature Range Conditions, TJ = 85°C (unless noted otherwise),

Typical: VCC33A = 3.3 V, VCC = 1.5 V

Parameter Description Condition Min. Typ. Max. Units

Direct Input using Analog Pad AV, AC, AT

VINADC Input Voltage (Direct Input) Refer to Table 3-2 on

page 3-3

CINADC Input Capacitance Channel not selected 7 pF

Channel selected but not

sampling

8pF

Channel selected and

sampling

18 pF

ZINADC Input Impedance 8-bit mode 2 k

10-bit mode 2 k

12-bit mode 2 k

Analog Reference Voltage VAREF

VAREF Accuracy TJ = 25°C 2.537 2.56 2.583 V

Temperature Drift of

Internal Reference

65 ppm / °C

External Reference 2.527 VCC33A + 0.05 V

ADC Accuracy (using external reference) 1,2

DC Accuracy

TUE Total Unadjusted Error 8-bit mode 0.29 LSB

10-bit mode 0.72 LSB

12-bit mode 1.8 LSB

INL Integral Non-Linearity 8-bit mode 0.20 0.25 LSB

10-bit mode 0.32 0.43 LSB

12-bit mode 1.71 1.80 LSB

DNL Differential Non-Linearity

(no missing code)

8-bit mode 0.20 0.24 LSB

10-bit mode 0.60 0.65 LSB

12-bit mode 2.40 2.48 LSB

Offset Error 8-bit mode 0.01 0.17 LSB

10-bit mode 0.05 0.20 LSB

12-bit mode 0.20 0.40 LSB

Gain Error 8-bit mode 0.0004 0.003 LSB

10-bit mode 0.002 0.011 LSB

12-bit mode 0.007 0.044 LSB

Gain Error (with internal

reference)

All modes 2 % FSR

Notes:

1. Accuracy of the external reference is 2.56 V ± 4.6 mV.

2. Data is based on characterization.

3. The sample rate is time-shared among active analog inputs.

Device Architecture

2-121 Revision 8

Dynamic Performance

SNR Signal-to-Noise Ratio 8-bit mode 48.0 49.5 dB

10-bit mode 58.0 60.0 dB

12-bit mode 62.9 64.5 dB

SINAD Signal-to-Noise Distortion 8-bit mode 47.6 49.5 dB

10-bit mode 57.4 59.8 dB

12-bit mode 62.0 64.2 dB

THD Total Harmonic

Distortion

8-bit mode –74.4 –63.0 dBc

10-bit mode –78.3 –63.0 dBc

12-bit mode –77.9 –64.4 dBc

ENOB Effective Number of Bits 8-bit mode 7.6 7.9 bits

10-bit mode 9.5 9.6 bits

12-bit mode 10.0 10.4 bits

Conversion Rate

Conversion Time 8-bit mode 1.7 µs

10-bit mode 1.8 µs

12-bit mode 2 µs

Sample Rate 8-bit mode 600 Ksps

10-bit mode 550 Ksps

12-bit mode 500 Ksps

Table 2-50 • ADC Characteristics in Direct Input Mode (continued)

Commercial Temperature Range Conditions, TJ = 85°C (unless noted otherwise),

Typical: VCC33A = 3.3 V, VCC = 1.5 V

Parameter Description Condition Min. Typ. Max. Units

Notes:

1. Accuracy of the external reference is 2.56 V ± 4.6 mV.

2. Data is based on characterization.

3. The sample rate is time-shared among active analog inputs.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-122

Table 2-51 • Uncalibrated Analog Channel Accuracy*

Worst-Case Industrial Conditions, TJ = 85°C

Total Channel

Error (LSB)

Channel Input Offset

Error (LSB)

Channel Input Offset

Error (mV)

Channel Gain Error

(%FSR)

Analog

Pad

Prescaler

Range (V)

Neg.

Max. Med.

Pos.

Max.

Neg

Max Med.

Pos.

Max.

Neg.

Max. Med.

Pos.

Max. Min. Typ. Max.

Positive Range ADC in 10-Bit Mode

AV, AC 16 –22 –2 12 –11 –2 14 –169 –32 224 3 0 –3

8 –40 –5 17 –11 –5 21 –87 –40 166 2 0 –4

4 –45 –9 24 –16 –11 36 –63 –43 144 2 0 –4

2 –70 –19 33 –33 –20 66 –66 –39 131 2 0 –4

1 –25 –7 5 –11 –3 26 –11 –3 26 3 –1 –3

0.5 –41 –12 8 –12 –7 38 –6 –4 19 3 –1 –3

0.25 –53 –14 19 –20 –14 40 –5 –3 10 5 0 –4

0.125 –89 –29 24 –40 –28 88 –5 –4 11 7 0 –5

AT 16 –3 9 15 –4 0 4 –64 5 64 1 0 –1

4 –10 2 15 –11 –2 11 –44 –8 44 1 0 –1

Negative Range ADC in 10-Bit Mode

AV, AC 16 –35 –10 9 –24 –6 9 –383 –96 148 5 –1 –6

8 –65 –19 12 –34 –12 9 –268 –99 75 5 –1 –5

4 –86 –28 21 –64 –24 19 –254 –96 76 5 –1 –6

2 –136 –53 37 –115 –42 39 –230 –83 78 6 –2 –7

1 –98 –35 8 –39 –8 15 –39 –8 15 10 –3 –10

0.5 –121 –46 7 –54 –14 18 –27 –7 9 10 –4 –11

0.25 –149 –49 19 –72 –16 40 –18 –4 10 14 –4 –12

0.125 –188 –67 38 –112 –27 56 –14 –3 7 16 –5 –14

Note: *Channel Accuracy includes prescaler and ADC accuracies. For 12-bit mode, multiply the LSB count by 4. For

8-bit mode, divide the LSB count by 4. Gain remains the same.

Device Architecture

2-123 Revision 8

Table 2-52 • Calibrated Analog Channel Accuracy 1,2,3

Worst-Case Industrial Conditions, TJ = 85°C

Condition Total Channel Error (LSB)

Analog

Pad Prescaler Range (V) Input Voltage4 (V) Negative Max. Median Positive Max.

Positive Range ADC in 10-Bit Mode

AV, AC 16 0.300 to 12.0 –6 1 6

8 0.250 to 8.00 –6 0 6

4 0.200 to 4.00 –7 –1 7

2 0.150 to 2.00 –7 0 7

1 0.050 to 1.00 –6 –1 6

AT 16 0.300 to 16.0 –5 0 5

4 0.100 to 4.00 –7 –1 7

Negative Range ADC in 10-Bit Mode

AV, AC 16 –0.400 to –10.5 –7 1 9

8 –0.350 to –8.00 –7 –1 7

4 –0.300 to –4.00 –7 –2 9

2 –0.250 to –2.00 –7 –2 7

1 –0.050 to –1.00 –16 –1 20

Notes:

1. Channel Accuracy includes prescaler and ADC accuracies. For 12-bit mode, multiply the LSB count by 4. For 8-bit

mode, divide the LSB count by 4. Overall accuracy remains the same.

2. Requires enabling Analog Calibration using SmartGen Analog System Builder. For further details, refer to the

“Temperature, Voltage, and Current Calibration in Fusion FPGAs” chapter of the Fusion FPGA Fabric User Guide.

3. Calibrated with two-point calibration methodology, using 20% and 80% full-scale points.

4. The lower limit of the input voltage is determined by the prescaler input offset.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-124

Examples

Calculating Accuracy for an Uncalibrated Analog Channel

Formula

For a given prescaler range, EQ 30 gives the output voltage.

Output Voltage = (Channel Output Offset in V) + (Input Voltage x Channel Gain)

EQ 30

where

Channel Output offset in V = Channel Input offset in LSBs x Equivalent voltage per LSB

Channel Gain Factor = 1+ (% Channel Gain / 100)

Example

Input Voltage = 5 V

Chosen Prescaler range = 8 V range

Refer to Table 2-51 on page 2-122.

Max. Output Voltage = (Max Positive input offset) + (Input Voltage x Max Positive Channel Gain)

Max. Positive input offset = (21 LSB) x (8 mV per LSB in 10-bit mode)

Max. Positive input offset = 166 mV

Max. Positive Gain Error = +3%

Max. Positive Channel Gain = 1 + (+3% / 100)

Max. Positive Channel Gain = 1.03

Max. Output Voltage = (166 mV) + (5 V x 1.03)

Max. Output Voltage = 5.316 V

Table 2-53 • Analog Channel Accuracy: Monitoring Standard Positive Voltages

Typical Conditions, TA = 25°C

Input Voltage

(V)

Calibrated Typical Error per Positive Prescaler Setting 1 (%FSR)

Direct ADC 2,3

(%FSR)

16 V (AT)

16 V (12 V)

(AV/AC)

8 V

(AV/AC) 4 V (AT)

4 V

(AV/AC)

2 V

(AV/AC)

1 V

(AV/AC) VAREF = 2.56 V

15 1

14 1

12 1 1

5221

3.3 2 2 1 1 1

2.5 3 2 1 1 1 1

1.8 4 4 1 1 1 1 1

1.5 5 5 2 2 2 1 1

1.2 7 6 2 2 2 1 1

0.9 9 9 4 3 3 1 1 1

Notes:

1. Requires enabling Analog Calibration using SmartGen Analog System Builder. For further details, refer to the

“Temperature, Voltage, and Current Calibration in Fusion FPGAs” chapter of the Fusion FPGA Fabric User Guide.

2. Direct ADC mode using an external VAREF of 2.56V±4.6mV, without Analog Calibration macro.

3. For input greater than 2.56 V, the ADC output will saturate. A higher VAREF or prescaler usage is recommended.

Device Architecture

2-125 Revision 8

Similarly,

Min. Output Voltage = (Max. Negative input offset) + (Input Voltage x Max. Negative Channel Gain)

= (–88 mV) + (5 V x 0.96) = 4.712 V

Calculating Accuracy for a Calibrated Analog Channel

Formula

For a given prescaler range, EQ 31 gives the output voltage.

Output Voltage = Channel Error in V + Input Voltage

EQ 31

where

Channel Error in V = Total Channel Error in LSBs x Equivalent voltage per LSB

Example

Input Voltage = 5 V

Chosen Prescaler range = 8 V range

Refer to Table 2-52 on page 2-123.

Max. Output Voltage = Max. Positive Channel Error in V + Input Voltage

Max. Positive Channel Error in V = (6 LSB) × (8 mV per LSB in 10-bit mode) = 48 mV

Max. Output Voltage = 48 mV + 5 V = 5.048 V

Similarly,

Min. Output Voltage = Max. Negative Channel Error in V + Input Voltage = (–48 mV) + 5 V = 4.952 V

Calculating LSBs from a Given Error Budget

Formula

For a given prescaler range,

LSB count = ± (Input Voltage × Required% error) / (Equivalent voltage per LSB)

Example

Input Voltage = 3.3 V

Required error margin= 1%

Refer to Table 2-52 on page 2-123.

Equivalent voltage per LSB = 16 mV for a 16V prescaler, with ADC in 10-bit mode

LSB Count = ± (5.0 V × 1%) / (0.016)

LSB Count = ± 3.125

Equivalent voltage per LSB = 8 mV for an 8 V prescaler, with ADC in 10-bit mode

LSB Count = ± (5.0 V × 1%) / (0.008)

LSB Count = ± 6.25

The 8 V prescaler satisfies the calculated LSB count accuracy requirement (see Table 2 - 52 o n

page 2-123).

Fusion Family of Mixed Signal FPGAs

Revision 8 2-126

Analog Configuration MUX

The ACM is the interface between the FPGA, the Analog Block configurations, and the real-time counter.

Microsemi Libero SoC will generate IP that will load and configure the Analog Block via the ACM.

However, users are not limited to using the Libero SoC IP. This section provides a detailed description of

the ACM's register map, truth tables for proper configuration of the Analog Block and RTC, as well as

timing waveforms so users can access and control the ACM directly from their designs.

The Analog Block contains four 8-bit latches per Analog Quad that are initialized through the ACM.

These latches act as configuration bits for Analog Quads. The ACM block runs from the core voltage

supply (1.5 V).

Access to the ACM is achieved via 8-bit address and data busses with enables. The pin list is provided in

Table 2-36 on page 2-78. The ACM clock speed is limited to a maximum of 10 MHz, more than sufficient

to handle the low-bandwidth requirements of configuring the Analog Block and the RTC (sub-block of the

Analog Block).

Table 2-54 decodes the ACM address space and maps it to the corresponding Analog Quad and

configuration byte for that quad.

Table 2-54 • ACM Address Decode Table for Analog Quad

ACMADDR [7:0] in

Decimal Name Description

Associated

Peripheral

0 – – Analog Quad

1 AQ0 Byte 0 Analog Quad

2 AQ0 Byte 1 Analog Quad

3 AQ0 Byte 2 Analog Quad

4 AQ0 Byte 3 Analog Quad

5 AQ1 Byte 0 Analog Quad

Analog Quad

36 AQ8 Byte 3 Analog Quad

37 AQ9 Byte 0 Analog Quad

38 AQ9 Byte 1 Analog Quad

39 AQ9 Byte 2 Analog Quad

40 AQ9 Byte 3 Analog Quad

41 Undefined Analog Quad

Undefined Analog Quad

63 Undefined RTC

64 COUNTER0 Counter bits 7:0 RTC

65 COUNTER1 Counter bits 15:8 RTC

66 COUNTER2 Counter bits 23:16 RTC

67 COUNTER3 Counter bits 31:24 RTC

68 COUNTER4 Counter bits 39:32 RTC

72 MATCHREG0 Match register bits 7:0 RTC

Device Architecture

2-127 Revision 8

ACM Characteristics1

73 MATCHREG1 Match register bits 15:8 RTC

74 MATCHREG2 Match register bits 23:16 RTC

75 MATCHREG3 Match register bits 31:24 RTC

76 MATCHREG4 Match register bits 39:32 RTC

80 MATCHBITS0 Individual match bits 7:0 RTC

81 MATCHBITS1 Individual match bits 15:8 RTC

82 MATCHBITS2 Individual match bits 23:16 RTC

83 MATCHBITS3 Individual match bits 31:24 RTC

84 MATCHBITS4 Individual match bits 39:32 RTC

88 CTRL_STAT Control (write) / Status (read) register bits

7:0

RTC

Note: ACMADDR bytes 1 to 40 pertain to the Analog Quads; bytes 64 to 89 pertain to the RTC.

Table 2-54 • ACM Address Decode Table for Analog Quad (continued)

ACMADDR [7:0] in

Decimal Name Description

Associated

Peripheral

1. When addressing the RTC addresses (i.e., ACMADDR 64 to 89), there is no timing generator, and the rc_osc, byte_en, and

aq_wen signals have no impact.

Figure 2-97 • ACM Write Waveform

Figure 2-98 • ACM Read Waveform

SUEACM

HEACM

SUDACM

HDACM

SUAACM

HAACM

ACMCLK

ACMWEN

ACMWDATA

ACMADDRESS

A0 A1

RD0 RD1

MPWCLKACM

CLKQACM

ACMCLK

ACMADDRESS

ACMRDATA

Fusion Family of Mixed Signal FPGAs

Revision 8 2-128

Timing Characteristics

Table 2-55 • Analog Configuration Multiplexer (ACM) Timing

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V

Parameter Description –2 –1 Std. Units

tCLKQACM Clock-to-Q of the ACM 19.73 22.48 26.42 ns

tSUDACM Data Setup time for the ACM 4.39 5.00 5.88 ns

tHDACM Data Hold time for the ACM 0.00 0.00 0.00 ns

tSUAACM Address Setup time for the ACM 4.73 5.38 6.33 ns

tHAACM Address Hold time for the ACM 0.00 0.00 0.00 ns

tSUEACM Enable Setup time for the ACM 3.93 4.48 5.27 ns

tHEACM Enable Hold time for the ACM 0.00 0.00 0.00 ns

tMPWARACM Asynchronous Reset Minimum Pulse Width for the ACM 10.00 10.00 10.00 ns

tREMARACM Asynchronous Reset Removal time for the ACM 12.98 14.79 17.38 ns

tRECARACM Asynchronous Reset Recovery time for the ACM 12.98 14.79 17.38 ns

tMPWCLKACM Clock Minimum Pulse Width for the ACM 45.00 45.00 45.00 ns

tFMAXCLKACM lock Maximum Frequency for the ACM 10.00 10.00 10.00 MHz

Device Architecture

2-129 Revision 8

Analog Quad ACM Description

Table 2-56 maps out the ACM space associated with configuration of the Analog Quads within the

Analog Block. Table 2-56 shows the byte assignment within each quad and the function of each bit within

each byte. Subsequent tables will explain each bit setting and how it corresponds to a particular

configuration. After 3.3 V and 1.5 V are applied to Fusion, Analog Quad configuration registers are

loaded with default settings until the initialization and configuration state machine changes them to user-

defined settings.

Table 2-56 • Analog Quad ACM Byte Assignment

Byte Bit Signal (Bx) Function Default Setting

Byte 0

(AV)

0 B0[0] Scaling factor control – prescaler Highest voltage range

1 B0[1]

2 B0[2]

3 B0[3] Analog MUX select Prescaler

4 B0[4] Current monitor switch Off

5 B0[5] Direct analog input switch Off

6 B0[6] Selects V-pad polarity Positive

7 B0[7] Prescaler op amp mode Power-down

Byte 1

(AC)

0 B1[0] Scaling factor control – prescaler Highest voltage range

1 B1[1]

2 B1[2]

3 B1[3] Analog MUX select Prescaler

4 B1[4]

5 B1[5] Direct analog input switch Off

6 B1[6] Selects C-pad polarity Positive

7 B1[7] Prescaler op amp mode Power-down

Byte 2

(AG)

0 B2[0] Internal chip temperature monitor * Off

1 B2[1] Spare –

2 B2[2] Current drive control Lowest current

3 B2[3]

4 B2[4] Spare –

5 B2[5] Spare –

6 B2[6] Selects G-pad polarity Positive

7 B2[7] Selects low/high drive Low drive

Byte 3

(AT)

0 B3[0] Scaling factor control – prescaler Highest voltage range

1 B3[1]

2 B3[2]

3 B3[3] Analog MUX select Prescaler

4 B3[4]

5 B3[5] Direct analog input switch Off

6 B3[6] – –

7 B3[7] Prescaler op amp mode Power-down

Note: *For the internal temperature monitor to function, Bit 0 of Byte 2 for all 10 Quads must be set.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-130

Table 2-57 details the settings available to control the prescaler values of the AV, AC, and AT pins. Note

that the AT pin has a reduced number of available prescaler values.

Table 2-58 details the settings available to control the MUX within each of the AV, AC, and AT circuits.

This MUX determines whether the signal routed to the ADC is the direct analog input, prescaled signal,

or output of either the Current Monitor Block or the Temperature Monitor Block.

Table 2-59 details the settings available to control the Direct Analog Input switch for the AV, AC, and AT

pins.

Table 2-60 details the settings available to control the polarity of the signals coming to the AV, AC, and AT

pins. Note that the only valid setting for the AT pin is logic 0 to support positive voltages.

Table 2-57 • Prescaler Control Truth Table—AV (x = 0), AC (x = 1), and AT (x = 3)

Control Lines

Bx[2:0]

Scaling

Factor, Pad to

ADC Input

LSB for an

8-Bit

Conversion1

(mV)

LSB for a

10-Bit

Conversion1

(mV)

LSB for a

12-Bit

Conversion1

(mV)

Full-Scale

Voltage in

10-Bit

Mode2Range Name

000 30.15625 64 16 4 16.368 V 16 V

001 0.3125 32 8 2 8.184 V 8 V

010 30.625 16 4 1 4.092 V 4 V

011 1.25 8 2 0.5 2.046 V 2 V

100 2.5 4 1 0.25 1.023 V 1 V

101 5.0 2 0.5 0.125 0.5115 V 0.5 V

110 10.0 1 0.25 0.0625 0.25575 V 0.25 V

111 20.0 0.5 0.125 0.03125 0.127875 V 0.125 V

Notes:

1. LSB voltage equivalences assume VAREF = 2.56 V.

2. Full Scale voltage for n-bit mode: ((2^n) - 1) x (LSB for a n-bit Conversion)

3. These are the only valid ranges for the Temperature Monitor Block Prescaler.

Table 2-58 • Analog Multiplexer Truth Table—AV (x = 0), AC (x = 1), and AT (x = 3)

Control Lines Bx[4] Control Lines Bx[3] ADC Connected To

0 0 Prescaler

0 1 Direct input

1 0 Current amplifier temperature monitor

1 1 Not valid

Table 2-59 • Direct Analog Input Switch Control Truth Table—AV (x = 0), AC (x = 1), and AT (x = 3)

Control Lines Bx[5] Direct Input Switch

0 Off

1 On

Table 2-60 • Voltage Polarity Control Truth Table—AV (x = 0), AC (x = 1), and AT (x = 3)*

Control Lines Bx[6] Input Signal Polarity

0 Positive

1 Negative

Note: *The B3[6] signal for the AT pad should be kept at logic 0 to accept only positive voltages.

Device Architecture

2-131 Revision 8

Table 2-61 details the settings available to either power down or enable the prescaler associated with the

analog inputs AV, AC, and AT.

Table 2-62 details the settings available to enable the Current Monitor Block associated with the AC pin.

Table 2-63 details the settings available to configure the drive strength of the gate drive when not in high-

drive mode.

Table 2-64 details the settings available to set the polarity of the gate driver (either p-channel- or

n-channel-type devices).

Table 2-65 details the settings available to turn on the Gate Driver and set whether high-drive mode is on

or off.

Table 2-66 details the settings available to turn on and off the chip internal temperature monitor.

Note: For the internal temperature monitor to function, Bit 0 of Byte 2 for all 10 Quads must be set.

Table 2-61 • Prescaler Op Amp Power-Down Truth Table—AV (x = 0), AC (x = 1), and AT (x = 3)

Control Lines Bx[7] Prescaler Op Amp

0 Power-down

1 Operational

Table 2-62 • Current Monitor Input Switch Control Truth Table—AV (x = 0)

Control Lines B0[4] Current Monitor Input Switch

0 Off

1 On

Table 2-63 • Low-Drive Gate Driver Current Truth Table (AG)

Control Lines B2[3] Control Lines B2[2] Current (µA)

0 0 1

0 1 3

1 0 10

1 1 30

Table 2-64 • Gate Driver Polarity Truth Table (AG)

Control Lines B2[6] Gate Driver Polarity

0 Positive

1 Negative

Table 2-65 • Gate Driver Control Truth Table (AG)

Control Lines B2[7] GDON Gate Driver

0 0 Off

0 1 Low drive on

1 0 Off

1 1 High drive on

Table 2-66 • Internal Temperature Monitor Control Truth Table

Control Lines B2[0] PDTMB Chip Internal Temperature Monitor

00Off

11On

Fusion Family of Mixed Signal FPGAs

Revision 8 2-132

User I/Os

Introduction

Fusion devices feature a flexible I/O structure, supporting a range of mixed voltages (1.5 V, 1.8 V, 2.5 V,

and 3.3 V) through a bank-selectable voltage. Table 2-68, Ta b l e 2 - 6 9 , Ta b l e 2 - 7 0 , and Table 2-71 on

page 2-135 show the voltages and the compatible I/O standards. I/Os provide programmable slew rates,

drive strengths, weak pull-up, and weak pull-down circuits. 3.3 V PCI and 3.3 V PCI-X are 5 V–tolerant.

See the "5 V Input Tolerance" section on page 2-144 for possible implementations of 5 V tolerance.

All I/Os are in a known state during power-up, and any power-up sequence is allowed without current

impact. Refer to the "I/O Power-Up and Supply Voltage Thresholds for Power-On Reset (Commercial

and Industrial)" section on page 3-5 for more information. In low power standby or sleep mode (VCC is

OFF, VCC33A is ON, VCCI is ON) or when the resource is not used, digital inputs are tristated, digital

outputs are tristated, and digital bibufs (input/output) are tristated.

I/O Tile

The Fusion I/O tile provides a flexible, programmable structure for implementing a large number of I/O

standards. In addition, the registers available in the I/O tile in selected I/O banks can be used to support

high-performance register inputs and outputs, with register enable if desired (Figure 2-99 on

page 2-133). The registers can also be used to support the JESD-79C DDR standard within the I/O

structure (see the "Double Data Rate (DDR) Support" section on page 2-139 for more information).

As depicted in Figure 2-100 on page 2-138, all I/O registers share one CLR port. The output register and

output enable register share one CLK port. Refer to the "I/O Registers" section on page 2-138 for more

information.

I/O Banks and I/O Standards Compatibility

The digital I/Os are grouped into I/O voltage banks. There are three digital I/O banks on the AFS090 and

AFS250 devices and four digital I/O banks on the AFS600 and AFS1500 devices. Figure 2-113 on

page 2-158 and Figure 2-114 on page 2-159 show the bank configuration by device. The north side of

the I/O in the AFS600 and AFS1500 devices comprises two banks of Pro I/Os. The Pro I/Os support a

wide number of voltage-referenced I/O standards in addition to the multitude of single-ended and

differential I/O standards common throughout all Microsemi digital I/Os. Each I/O voltage bank has

dedicated I/O supply and ground voltages (VCCI/GNDQ for input buffers and VCCI/GND for output

buffers). Because of these dedicated supplies, only I/Os with compatible standards can be assigned to

the same I/O voltage bank. Table 2-69 and Table 2-70 on page 2-134 show the required voltage

compatibility values for each of these voltages.

For more information about I/O and global assignments to I/O banks, refer to the specific pin table of the

device in the "Package Pin Assignments" on page 4-1 and the "User I/O Naming Convention" section on

page 2-158.

Each Pro I/O bank is divided into minibanks. Any user I/O in a VREF minibank (a minibank is the region

of scope of a VREF pin) can be configured as a VREF pin (Figure 2-99 on page 2-133). Only one VREF

pin is needed to control the entire VREF minibank. The location and scope of the VREF minibanks can

be determined by the I/O name. For details, see the "User I/O Naming Convention" section on

page 2-158.

Table 2-70 on page 2-134 shows the I/O standards supported by Fusion devices and the corresponding

voltage levels.

I/O standards are compatible if the following are true:

• Their VCCI values are identical.

• If both of the standards need a VREF, their VREF values must be identical (Pro I/O only).

Device Architecture

2-133 Revision 8

Figure 2-99 • Fusion Pro I/O Bank Detail Showing VREF Minibanks (north side ofAFS600 and AFS1500)

Table 2-67 • I/O Standards Supported by Bank Type

I/O Bank Single-Ended I/O Standards

Differential I/O

Standards Voltage-Referenced

Hot-

Swap

Standard I/O LVTTL/LVCMOS 3.3 V, LVCMOS

2.5 V / 1.8 V / 1.5 V, LVCMOS

2.5/5.0 V

–– Yes

Advanced I/O LVTTL/LVCMOS 3.3 V, LVCMOS

2.5 V / 1.8 V / 1.5 V, LVCMOS

2.5/5.0 V, 3.3 V PCI / 3.3 V PCI-X

LVPECL and

LVDS

––

Pro I/O LVTTL/LVCMOS 3.3 V, LVCMOS

2.5 V / 1.8 V / 1.5 V, LVCMOS

2.5/5.0 V, 3.3 V PCI / 3.3 V PCI-X

LVPECL and

LVDS

GTL+ 2.5 V / 3.3 V, GTL 2.5 V / 3.3 V,

HSTL Class I and II, SSTL2 Class I

and II, SSTL3 Class I and II

Yes

Bank 1

Bank 0

I/O

GND

I/O

GND

I/O

I/O Pad

If needed, the VREF for a given

minibank can be provided by

any I/O within the minibank.

CCC CCC CCC

Up to five VREF

minibanks within

an I/O bank

VREF signal scope is

between 8 and 18 I/Os.

Common VREF

signal for all I/Os

in VREF minibanks

VCCI

VCC

VCCI

VCC

Fusion Family of Mixed Signal FPGAs

Revision 8 2-134

Table 2-68 • I/O Bank Support by Device

I/O Bank AFS090 AFS250 AFS600 AFS1500

Standard I/O N N – –

Advanced I/O E, W E, W E, W E, W

Pro I/O – – N N

Analog QuadSSSS

Note: E = East side of the device

W = West side of the device

N = North side of the device

S = South side of the device

Table 2-69 • Fusion VCCI Voltages and Compatible Standards

VCCI (typical) Compatible Standards

3.3 V LVTTL/LVCMOS 3.3, PCI 3.3, SSTL3 (Class I and II),* GTL+ 3.3, GTL 3.3,* LVPECL

2.5 V LVCMOS 2.5, LVCMOS 2.5/5.0, SSTL2 (Class I and II),* GTL+ 2.5,* GTL 2.5,* LVDS, BLVDS, M-

LVDS

1.8 V LVCMOS 1.8

1.5 V LVCMOS 1.5, HSTL (Class I),* HSTL (Class II)*

Note: *I/O standard supported by Pro I/O banks.

Table 2-70 • Fusion VREF Voltages and Compatible Standards*

VREF (typical) Compatible Standards

1.5 V SSTL3 (Class I and II)

1.25 V SSTL2 (Class I and II)

1.0 V GTL+ 2.5, GTL+ 3.3

0.8 V GTL 2.5, GTL 3.3

0.75 V HSTL (Class I), HSTL (Class II)

Note: *I/O standards supported by Pro I/O banks.

Device Architecture

2-135 Revision 8

Table 2-71 • Fusion Standard and Advanced I/O Features

I/O Bank Voltage (typical)

Minibank Voltage (typical)

LVTTL/LVCMOS 3.3 V

LVCMOS 2.5 V

LVCMOS 1.8 V

LVCMOS 1.5 V

3.3 V PCI / PCI-X

GTL + (3.3 V)

GTL + (2.5 V)

GTL (3.3 V)

GTL (2.5 V)

HSTL Class I and II (1.5 V)

SSTL2 Class I and II (2.5 V)

SSTL3 Class I and II (3.3 V)

LVDS (2.5 V ± 5%)

LVPECL (3.3 V)

3.3 V –

0.80 V

1.00 V

1.50 V

2.5 V –

0.80 V

1.00 V

1.25 V

1.8 V –

1.5 V –

0.75 V

Note: White box: Allowable I/O standard combinations

Gray box: Illegal I/O standard combinations

Fusion Family of Mixed Signal FPGAs

Revision 8 2-136

Features Supported on Pro I/Os

Table 2-72 lists all features supported by transmitter/receiver for single-ended and differential I/Os.

Table 2-72 • Fusion Pro I/O Features

Feature Description

Single-ended and voltage-

referenced transmitter

features

• Hot insertion in every mode except PCI or 5 V input tolerant (these modes use

clamp diodes and do not allow hot insertion)

• Activation of hot insertion (disabling the clamp diode) is selectable by I/Os.

• Weak pull-up and pull-down

• Two slew rates

• Skew between output buffer enable/disable time: 2 ns delay (rising edge) and

0 ns delay (falling edge); see "Selectable Skew between Output Buffer

Enable/Disable Time" on page 2-149 for more information

• Five drive strengths

• 5 V–tolerant receiver ("5 V Input Tolerance" section on page 2-144)

• LVTTL/LVCMOS 3.3 V outputs compatible with 5 V TTL inputs ("5 V Output

Tolerance" section on page 2-148)

• High performance (Table 2-76 on page 2-143)

Single-ended receiver features • Schmitt trigger option

• ESD protection

• Programmable delay: 0 ns if bypassed, 0.625 ns with '000' setting, 6.575 ns

with '111' setting, 0.85-ns intermediate delay increments (at 25°C, 1.5 V)

• High performance (Table 2-76 on page 2-143)

• Separate ground planes, GND/GNDQ, for input buffers only to avoid output-

induced noise in the input circuitry

Voltage-referenced differential

receiver features

• Programmable Delay: 0 ns if bypassed, 0.625 ns with '000' setting, 6.575 ns

with '111' setting, 0.85-ns intermediate delay increments (at 25°C, 1.5 V)

• High performance (Table 2-76 on page 2-143)

• Separate ground planes, GND/GNDQ, for input buffers only to avoid output-

induced noise in the input circuitry

CMOS-style LVDS, BLVDS,

M-LVDS, or LVPECL

transmitter

• Two I/Os and external resistors are used to provide a CMOS-style LVDS,

BLVDS, M-LVDS, or LVPECL transmitter solution.

• Activation of hot insertion (disabling the clamp diode) is selectable by I/Os.

• Weak pull-up and pull-down

• Fast slew rate

LVDS/LVPECL differential

receiver features

• ESD protection

• High performance (Table 2-76 on page 2-143)

• Programmable delay: 0.625 ns with '000' setting, 6.575 ns with '111' setting,

0.85-ns intermediate delay increments (at 25°C, 1.5 V)

• Separate input buffer ground and power planes to avoid output-induced noise

in the input circuitry

Device Architecture

2-137 Revision 8

Table 2-73 • Maximum I/O Frequency for Single-Ended, Voltage-Referenced, and Differential I/Os;

All I/O Bank Types (maximum drive strength and high slew selected)

Specification Performance Up To

LVTTL/LVCMOS 3.3 V 200 MHz

LVCMOS 2.5 V 250 MHz

LVCMOS 1.8 V 200 MHz

LVCMOS 1.5 V 130 MHz

PCI 200 MHz

PCI-X 200 MHz

HSTL-I 300 MHz

HSTL-II 300 MHz

SSTL2-I 300 MHz

SSTL2-II 300 MHz

SSTL3-I 300 MHz

SSTL3-II 300 MHz

GTL+ 3.3 V 300 MHz

GTL+ 2.5 V 300 MHz

GTL 3.3 V 300 MHz

GTL 2.5 V 300 MHz

LVDS 350 MHz

LVPECL 300 MHz

Fusion Family of Mixed Signal FPGAs

Revision 8 2-138

I/O Registers

Each I/O module contains several input, output, and enable registers. Refer to Figure 2-100 for a

simplified representation of the I/O block.

The number of input registers is selected by a set of switches (not shown in Figure 2-100) between

registers to implement single or differential data transmission to and from the FPGA core. The Designer

software sets these switches for the user.

A common CLR/PRE signal is employed by all I/O registers when I/O register combining is used. Input

Note: Fusion I/Os have registers to support DDR functionality (see the "Double Data Rate (DDR) Support" section on

page 2-139 for more information).

Figure 2-100 • I/O Block Logical Representation

Input

Reg

E = Enable Pin

PAD

OCE

ICE

Input

Reg

Input

Reg

CLR/PRE

Pull-Up/Down

Resistor Control

Signal Drive Strength

and Slew-Rate Control

Output

Reg

Output

Reg

To FPGA Core

From FPGA Core

Output

Enable

Reg

OCE

I/O / CLR or I/O / PRE / OCE

I/O / Q0

I/O / Q1

I/O / ICLK

I/O / D0

I/O / D1 / ICE

I/O / OCLK

I/O / OE

Device Architecture

2-139 Revision 8

Double Data Rate (DDR) Support

Fusion Pro I/Os support 350 MHz DDR inputs and outputs. In DDR mode, new data is present on every

transition of the clock signal. Clock and data lines have identical bandwidths and signal integrity

requirements, making it very efficient for implementing very high-speed systems.

DDR interfaces can be implemented using HSTL, SSTL, LVDS, and LVPECL I/O standards. In addition,

high-speed DDR interfaces can be implemented using LVDS I/O.

Input Support for DDR

The basic structure to support a DDR input is shown in Figure 2-101. Three input registers are used to

capture incoming data, which is presented to the core on each rising edge of the I/O register clock.

Each I/O tile on Fusion devices supports DDR inputs.

Output Support for DDR

The basic DDR output structure is shown in Figure 2-102 on page 2-140. New data is presented to the

output every half clock cycle. Note: DDR macros and I/O registers do not require additional routing. The

combiner automatically recognizes the DDR macro and pushes its registers to the I/O register area at the

edge of the chip. The routing delay from the I/O registers to the I/O buffers is already taken into account

in the DDR macro.

Refer to the application note Using DDR for Fusion Devices for more information.

Figure 2-101 • DDR Input Register Support in Fusion Devices

Input DDR

Data

CLK

CLKBUF

INBUF

Out_QF

(to core)

FF2

FF1

INBUF

CLR

DDR_IN

Out_QR

(to core)

Fusion Family of Mixed Signal FPGAs

Revision 8 2-140

Figure 2-102 • DDR Output Support in Fusion Devices

Data_F

(from core)

CLK

CLKBUF

Out

FF2

INBUF

CLR

DDR_OUT

FF1

OUTBUF

Data_R

(from core)

Device Architecture

2-141 Revision 8

Hot-Swap Support

Hot-swapping (also called hot plugging) is the operation of hot insertion or hot removal of a card in (or

from) a powered-up system. The levels of hot-swap support and examples of related applications are

described in Table 2-74. The I/Os also need to be configured in hot insertion mode if hot plugging

compliance is required.

Table 2-74 • Levels of Hot-Swap Support

Hot

Swapping

Level Description

Power

Applied

to Device Bus State

Card

Ground

Connection

Device

Circuitry

Connected

to Bus Pins

Example of

Application with

Cards that Contain

Fusion Devices

Compliance of

Fusion Devices

1 Cold-swap No – – – System and card with

Microsemi FPGA chip

are powered down,

then card gets

plugged into system,

then power supplies

are turned on for

system but not for

FPGA on card.

Compliant I/Os

can but do not

have to be set to

hot insertion

mode.

2 Hot-swap

while reset

Yes H eld in

reset state

Must be made

and

maintained for

1 ms before,

during, and

after insertion/

removal

– In PCI hot plug

specification, reset

control circuitry

isolates the card

busses until the card

supplies are at their

nominal operating

levels and stable.

Compliant I/Os

can but do not

have to be set to

hot insertion

mode.

3 Hot-swap

while bus

idle

Yes H eld idle

(no ongoing

I/O

processes

during

insertion/re

moval)

Same as

Level 2

Must remain

glitch-free

during

power-up or

power-down

Board bus shared

with card bus is

"frozen," and there is

no toggling activity on

bus. It is critical that

the logic states set on

the bus signal do not

get disturbed during

card

insertion/removal.

Compliant with

cards with two

levels of staging.

I/Os have to be

set to hot

insertion mode.

4 Hot-swap on

an active

bus

Yes B us may

have active

I/O

processes

ongoing,

but device

being

inserted or

removed

must be

idle.

Same as

Level 2

Same as

Level 3

There is activity on

the system bus, and it

is critical that the logic

states set on the bus

signal do not get

disturbed during card

insertion/removal.

Compliant with

cards with two

levels of staging.

I/Os have to be

set to hot

insertion mode.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-142

For Fusion devices requiring Level 3 and/or Level 4 compliance, the board drivers connected to Fusion

I/Os need to have 10 k (or lower) output drive resistance at hot insertion, and 1 k (or lower) output

drive resistance at hot removal. This is the resistance of the transmitter sending a signal to the Fusion

I/O, and no additional resistance is needed on the board. If that cannot be assured, three levels of

staging can be used to meet Level 3 and/or Level 4 compliance. Cards with two levels of staging should

have the following sequence:

1. Grounds

2. Powers, I/Os, other pins

Cold-Sparing Support

Cold-sparing means that a subsystem with no power applied (usually a circuit board) is electrically

connected to the system that is in operation. This means that all input buffers of the subsystem must

present very high input impedance with no power applied so as not to disturb the operating portion of the

system.

Pro I/O banks and standard I/O banks fully support cold-sparing.

For Pro I/O banks, standards such as PCI that require I/O clamp diodes, can also achieve cold-sparing

compliance, since clamp diodes get disconnected internally when the supplies are at 0 V.

For Advanced I/O banks, since the I/O clamp diode is always active, cold-sparing can be accomplished

either by employing a bus switch to isolate the device I/Os from the rest of the system or by driving each

advanced I/O pin to 0 V.

If Standard I/O banks are used in applications requiring cold-sparing, a discharge path from the power

supply to ground should be provided. This can be done with a discharge resistor or a switched resistor.

This is necessary because the standard I/O buffers do not have built-in I/O clamp diodes.

If a resistor is chosen, the resistor value must be calculated based on decoupling capacitance on a given

power supply on the board (this decoupling capacitor is in parallel with the resistor). The RC time

constant should ensure full discharge of supplies before cold-sparing functionality is required. The

resistor is necessary to ensure that the power pins are discharged to ground every time there is an

interruption of power to the device.

I/O cold-sparing may add additional current if the pin is configured with either a pull-up or pull down

resistor and driven in the opposite direction. A small static current is induced on each IO pin when the pin

is driven to a voltage opposite to the weak pull resistor. The current is equal to the voltage drop across

the input pin divided by the pull resistor. Please refer to Table 2-95 on page 2-169, Table 2-96 on

page 2-169, and Table 2-97 on page 2-171 for the specific pull resistor value for the corresponding I/O

standard.

For example, assuming an LVTTL 3.3 V input pin is configured with a weak Pull-up resistor, a current will

flow through the pull-up resistor if the input pin is driven low. For an LVTTL 3.3 V, pull-up resistor is ~45

k and the resulting current is equal to 3.3 V / 45 k = 73 µA for the I/O pin. This is true also when a

weak pull-down is chosen and the input pin is driven high. Avoiding this current can be done by driving

the input low when a weak pull-down resistor is used, and driving it high when a weak pull-up resistor is

used.

In Active and Static modes, this current draw can occur in the following cases:

• Input buffers with pull-up, driven low

• Input buffers with pull-down, driven high

• Bidirectional buffers with pull-up, driven low

• Bidirectional buffers with pull-down, driven high

• Output buffers with pull-up, driven low

• Output buffers with pull-down, driven high

• Tristate buffers with pull-up, driven low

• Tristate buffers with pull-down, driven high

Device Architecture

2-143 Revision 8

Electrostatic Discharge (ESD) Protection

Fusion devices are tested per JEDEC Standard JESD22-A114-B.

Fusion devices contain clamp diodes at every I/O, global, and power pad. Clamp diodes protect all

device pads against damage from ESD as well as from excessive voltage transients.

Each I/O has two clamp diodes. One diode has its positive (P) side connected to the pad and its negative

(N) side connected to VCCI. The second diode has its P side connected to GND and its N side

connected to the pad. During operation, these diodes are normally biased in the Off state, except when

transient voltage is significantly above VCCI or below GND levels.

By selecting the appropriate I/O configuration, the diode is turned on or off. Refer to Ta ble 2- 75 and

Table 2-76 on page 2-143 for more information about I/O standards and the clamp diode.

The second diode is always connected to the pad, regardless of the I/O configuration selected.

Table 2-75 • Fusion Standard and Advanced I/O – Hot-Swap and 5 V Input Tolerance Capabilities

I/O Assignment

Clamp Diode Hot Insertion 5 V Input Tolerance 1

Input

Buffer

Output

Buffer

Standard

I/O

Advanced

I/O

Standard

I/O

Advanced

I/O

Standard

I/O

Advanced

I/O

3.3 V LVTTL/LVCMOS No Yes Yes No Yes1Yes1Enabled/Disabled

3.3 V PCI, 3.3 V PCI-X N/A Yes N/A No N/A Yes1Enabled/Disabled

LVCMOS 2.5 V No Yes Yes No No No Enabled/Disabled

LVCMOS 2.5 V / 5.0 V N/A Yes N/A No N/A Yes2Enabled/Disabled

LVCMOS 1.8 V No Yes Yes No No No Enabled/Disabled

LVCMOS 1.5 V No Yes Yes No No No Enabled/Disabled

Differential,

LVDS/BLVDS/M-

LVDS/ LVPECL 3

N/A Yes N/A No N/A No Enabled/Disabled

Notes:

1. Can be implemented with an external IDT bus switch, resistor divider, or Zener with resistor.

2. Can be implemented with an external resistor and an internal clamp diode.

3. Bidirectional LVPECL buffers are not supported. I/Os can be configured as either input buffers or output buffers.

Table 2-76 • Fusion Pro I/O – Hot-Swap and 5 V Input Tolerance Capabilities

I/O Assignment

Clamp

Diode

Hot

Insertion

5 V Input

Tolerance Input Buffer Output Buffer

3.3 V LVTTL/LVCMOS No Yes Yes1Enabled/Disabled

3.3 V PCI, 3.3 V PCI-X Yes No Yes1Enabled/Disabled

LVCMOS 2.5 V 3No Yes No Enabled/Disabled

LVCMOS 2.5 V / 5.0 V 3Yes No Yes2Enabled/Disabled

LVCMOS 1.8 V No Yes No Enabled/Disabled

LVCMOS 1.5 V No Yes No Enabled/Disabled

Voltage-Referenced Input Buffer No Yes No Enabled/Disabled

Differential, LVDS/BLVDS/M-LVDS/LVPECL4No Yes No Enabled/Disabled

Notes:

1. Can be implemented with an external IDT bus switch, resistor divider, or Zener with resistor.

2. Can be implemented with an external resistor and an internal clamp diode.

3. In the SmartGen, FlashROM, Flash Memory System Builder, and Analog System Builder User Guide, select the

LVCMOS5 macro for the LVCMOS 2.5 V / 5.0 V I/O standard or the LVCMOS25 macro for the LVCMOS 2.5 V I/O

standard.

4. Bidirectional LVPECL buffers are not supported. I/Os can be configured as either input buffers or output buffers.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-144

5 V Input Tolerance

I/Os can support 5 V input tolerance when LVTTL 3.3 V, LVCMOS 3.3 V, LVCMOS 2.5 V / 5 V, and

LVCMOS 2.5 V configurations are used (see Table 2-77 on page 2-147 for more details). There are four

recommended solutions (see Figure 2-103 to Figure 2-106 on page 2-146 for details of board and macro

setups) to achieve 5 V receiver tolerance. All the solutions meet a common requirement of limiting the

voltage at the input to 3.6 V or less. In fact, the I/O absolute maximum voltage rating is 3.6 V, and any

voltage above 3.6 V may cause long-term gate oxide failures.

Solution 1

The board-level design needs to ensure that the reflected waveform at the pad does not exceed the limits

provided in Table 3-4 on page 3-4. This is a long-term reliability requirement.

This scheme will also work for a 3.3 V PCI / PCI-X configuration, but the internal diode should not be

used for clamping, and the voltage must be limited by the two external resistors, as explained below.

Relying on the diode clamping would create an excessive pad DC voltage of 3.3 V + 0.7 V = 4 V.

The following are some examples of possible resistor values (based on a simplified simulation model

with no line effects and 10  transmitter output resistance, where Rtx_out_high = (VCCI – VOH) / IOH,

Rtx_out_low = VOL / IOL).

Example 1 (high speed, high current):

Rtx_out_high = Rtx_out_low = 10 

R1 = 36  (±5%), P(r1)min = 0.069 

R2 = 82  (±5%), P(r2)min = 0.158 

Imax_tx = 5.5 V / (82 * 0.95 + 36 * 0.95 + 10) = 45.04 mA

tRISE =t

FALL = 0.85 ns at C_pad_load = 10 pF (includes up to 25% safety margin)

tRISE =t

FALL = 4 ns at C_pad_load = 50 pF (includes up to 25% safety margin)

Example 2 (low–medium speed, medium current):

Rtx_out_high = Rtx_out_low = 10 

R1 = 220  (±5%), P(r1)min = 0.018 

R2 = 390  (±5%), P(r2)min = 0.032 

Imax_tx = 5.5 V / (220 * 0.95 + 390 * 0.95 + 10) = 9.17 mA

tRISE =t

FALL = 4 ns at C_pad_load = 10 pF (includes up to 25% safety margin)

tRISE =t

FALL = 20 ns at C_pad_load = 50 pF (includes up to 25% safety margin)

Other values of resistors are also allowed as long as the resistors are sized appropriately to limit the

voltage at the receiving end to 2.5 V < Vin(rx) < 3.6 V when the transmitter sends a logic 1. This range of

Vin_dc(rx) must be assured for any combination of transmitter supply (5 V ± 0.5 V), transmitter output

resistance, and board resistor tolerances.

Device Architecture

2-145 Revision 8

Temporary overshoots are allowed according to Table 3-4 on page 3-4.

Solution 2

The board-level design must ensure that the reflected waveform at the pad does not exceed limits

provided in Table 3-4 on page 3-4. This is a long-term reliability requirement.

This scheme will also work for a 3.3 V PCI/PCI-X configuration, but the internal diode should not be used

for clamping, and the voltage must be limited by the external resistors and Zener, as shown in Figure 2-

104. Relying on the diode clamping would create an excessive pad DC voltage of 3.3 V + 0.7 V = 4 V.

Figure 2-103 • Solution 1

Figure 2-104 • Solution 2

On-ChipOff-Chip

Solution 1

5.5 V 3.3 V

Requires two board resistors,

LVCMOS 3.3 V I/Os

Fusion I/O Input

Rext1

Rext2

Solution 2

5.5 V 3.3 V

Requires one board resistor, one

Zener 3.3 V diode, LVCMOS 3.3 V I/Os

Fusion I/O Input

Rext1

Zener

3.3 V

On-ChipOff-Chip

Fusion Family of Mixed Signal FPGAs

Revision 8 2-146

Solution 3

The board-level design must ensure that the reflected waveform at the pad does not exceed limits

provided in Table 3-4 on page 3-4. This is a long-term reliability requirement.

This scheme will also work for a 3.3 V PCI/PCIX configuration, but the internal diode should not be used

for clamping, and the voltage must be limited by the bus switch, as shown in Figure 2-105. Relying on the

diode clamping would create an excessive pad DC voltage of 3.3 V + 0.7 V = 4 V.

Solution 4

Figure 2-105 • Solution 3

Figure 2-106 • Solution 4

Solution 3

Requires a bus switch on the board,

LVTTL/LVCMOS 3.3 V I/Os.

Fusion I/O Input

3.3 V

5.5 V

Bus

Switch

IDTQS32X23

On-ChipOff-Chip

Solution 4

2.5 V On-Chip

Clamp

Diode

Requires one board resistor.

Available for LVCMOS 2.5 V / 5.0 V.

On-ChipOff-Chip

5.5 V 2.5 V

Fusion I/O Input

Rext1

Device Architecture

2-147 Revision 8

Table 2-77 • Comparison Table for 5 V–Compliant Receiver Scheme

Scheme Board Components Speed Current Limitations

1 Two resistors Low to high1Limited by transmitter's drive strength

2 Resistor and Zener 3.3 V Medium Limited by transmitter's drive strength

3 Bus switch High N/A

4 Minimum resistor value2

R = 47  at TJ = 70°C

R = 150  at TJ = 85°C

R = 420  at TJ = 100°C

Medium Maximum diode current at 100% duty cycle, signal constantly at

'1'

52.7 mA at TJ =70°C / 10-year lifetime

16.5 mA at TJ = 85°C / 10-year lifetime

5.9 mA at TJ = 100°C / 10-year lifetime

For duty cycles other than 100%, the currents can be increased

by a factor = 1 / (duty cycle).

Example: 20% duty cycle at 70°C

Maximum current = (1 / 0.2) * 52.7 mA = 5 * 52.7 mA = 263.5 mA

Notes:

1. Speed and current consumption increase as the board resistance values decrease.

2. Resistor values ensure I/O diode long-term reliability.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-148

5 V Output Tolerance

Fusion I/Os must be set to 3.3 V LVTTL or 3.3 V LVCMOS mode to reliably drive 5 V TTL receivers. It is

also critical that there be NO external I/O pull-up resistor to 5 V, since this resistor would pull the I/O pad

voltage beyond the 3.6 V absolute maximum value and consequently cause damage to the I/O.

When set to 3.3 V LVTTL or 3.3 V LVCMOS mode, Fusion I/Os can directly drive signals into 5 V TTL

receivers. In fact, VOL = 0.4 V and VOH = 2.4 V in both 3.3 V LVTTL and 3.3 V LVCMOS modes exceed

the VIL = 0.8 V and VIH = 2 V level requirements of 5 V TTL receivers. Therefore, level '1' and level '0'

will be recognized correctly by 5 V TTL receivers.

Simultaneously Switching Outputs and PCB Layout

• Simultaneously switching outputs (SSOs) can produce signal integrity problems on adjacent

signals that are not part of the SSO bus. Both inductive and capacitive coupling parasitics of bond

wires inside packages and of traces on PCBs will transfer noise from SSO busses onto signals

adjacent to those busses. Additionally, SSOs can produce ground bounce noise and VCCI dip

noise. These two noise types are caused by rapidly changing currents through GND and VCCI

package pin inductances during switching activities:

• Ground bounce noise voltage = L(GND) * di/dt

• VCCI dip noise voltage = L(VCCI) * di/dt

Any group of four or more input pins switching on the same clock edge is considered an SSO bus. The

shielding should be done both on the board and inside the package unless otherwise described.

In-package shielding can be achieved in several ways; the required shielding will vary depending on

whether pins next to SSO bus are LVTTL/LVCMOS inputs, LVTTL/LVCMOS outputs, or

GTL/SSTL/HSTL/LVDS/LVPECL inputs and outputs. Board traces in the vicinity of the SSO bus have to

be adequately shielded from mutual coupling and inductive noise that can be generated by the SSO bus.

Also, noise generated by the SSO bus needs to be reduced inside the package.

PCBs perform an important function in feeding stable supply voltages to the IC and, at the same time,

maintaining signal integrity between devices.

Key issues that need to considered are as follows:

• Power and ground plane design and decoupling network design

• Transmission line reflections and terminations

Device Architecture

2-149 Revision 8

Selectable Skew between Output Buffer Enable/Disable Time

The configurable skew block is used to delay the output buffer assertion (enable) without affecting

deassertion (disable) time.

Figure 2-107 • Block Diagram of Output Enable Path

Figure 2-108 • Timing Diagram (option1: bypasses skew circuit)

Figure 2-109 • Timing Diagram (option 2: enables skew circuit)

ENABLE (OUT)

Skew Circuit

Output Enable

(from FPGA core)

I/O Output

Buffers

ENABLE (IN)

MUX

Skew Select

ENABLE (IN)

ENABLE (OUT)

Less than

0.1 ns

Less than

0.1 ns

ENABLE (IN)

ENABLE (OUT)

1.2 ns

(typical)

Less than

0.1 ns

Fusion Family of Mixed Signal FPGAs

Revision 8 2-150

At the system level, the skew circuit can be used in applications where transmission activities on

bidirectional data lines need to be coordinated. This circuit, when selected, provides a timing margin that

can prevent bus contention and subsequent data loss or transmitter over-stress due to transmitter-to-

transmitter current shorts. Figure 2-110 presents an example of the skew circuit implementation in a

bidirectional communication system. Figure 2-111 shows how bus contention is created, and Figure 2-

112 on page 2-151 shows how it can be avoided with the skew circuit.

Figure 2-110 • Example of Implementation of Skew Circuits in Bidirectional Transmission Systems Using

Fusion Devices

Figure 2-111 • Timing Diagram (bypasses skew circuit)

Transmitter 1: Fusion I/O Transmitter 2: Generic I/O

ENABLE(t2)

EN(b1) EN(b2)

EN(r1)

ENABLE(t1)

Bidirectional Data Bus

Transmitter

ENABLE/

DISABLE

Skew or

Bypass

Skew

Routing

Delay (t1)

Routing

Delay (t2)

EN (b1)

EN (b2)

ENABLE (r1)

Transmitter 1: ON

ENABLE (t2)

Transmitter 2: ON

ENABLE (t1)

Bus

Contention

Transmitter 1: OFF Transmitter 1: OFF

Transmitter 2: OFF

Device Architecture

2-151 Revision 8

Weak Pull-Up and Weak Pull-Down Resistors

Fusion devices support optional weak pull-up and pull-down resistors for each I/O pin. When the I/O is

pulled up, it is connected to the VCCI of its corresponding I/O bank. When it is pulled down, it is

connected to GND. Refer to Table 2-97 on page 2-171 for more information.

Slew Rate Control and Drive Strength

Fusion devices support output slew rate control: high and low. The high slew rate option is recommended

to minimize the propagation delay. This high-speed option may introduce noise into the system if

appropriate signal integrity measures are not adopted. Selecting a low slew rate reduces this kind of

noise but adds some delays in the system. Low slew rate is recommended when bus transients are

expected. Drive strength should also be selected according to the design requirements and noise

immunity of the system.

The output slew rate and multiple drive strength controls are available in LVTTL/LVCMOS 3.3 V,

LVCMOS 2.5 V, LVCMOS 2.5 V / 5.0 V input, LVCMOS 1.8 V, and LVCMOS 1.5 V. All other I/O

standards have a high output slew rate by default.

For Fusion slew rate and drive strength specifications, refer to the appropriate I/O bank table:

• Fusion Standard I/O (Table 2-78 on page 2-152)

• Fusion Advanced I/O (Table 2-79 on page 2-152)

• Fusion Pro I/O (Table 2-80 on page 2-152)

Table 2-83 on page 2-155 lists the default values for the above selectable I/O attributes as well as those

that are preset for each I/O standard.

Refer to Ta b l e 2 - 7 8 , Ta ble 2- 79, and Table 2-80 on page 2-152 for SLEW and OUT_DRIVE settings.

Table 2-81 on page 2-153 and Table 2-82 on page 2-154 list the I/O default attributes. Table 2-83 on

page 2-155 lists the voltages for the supported I/O standards.

Figure 2-112 • Timing Diagram (with skew circuit selected)

EN (b1)

EN (b2)

Transmitter 1: ON

ENABLE (t2)

Transmitter 2: ON Transmitter 2: OFF

ENABLE (t1)

Result: No Bus Contention

Transmitter 1: OFF Transmitter 1: OFF

Fusion Family of Mixed Signal FPGAs

Revision 8 2-152

Table 2-78 • Fusion Standard I/O Standards—OUT_DRIVE Settings

I/O Standards

OUT_DRIVE (mA)

2468 Slew

LVTTL/LVCMOS 3.3 V 

High Low

LVCMOS 2.5 V 

High Low

LVCMOS 1.8 V  ––HighLow

LVCMOS 1.5 V –––HighLow

Table 2-79 • Fusion Advanced I/O Standards—SLEW and OUT_DRIVE Settings

I/O Standards

OUT_DRIVE (mA)

2 4 6 8 12 16 Slew

LVTTL/LVCMOS 3.3 V  

High Low

LVCMOS 2.5 V  – High Low

LVCMOS 1.8 V  – – High Low

LVCMOS 1.5 V  – – – – High Low

Table 2-80 • Fusion Pro I/O Standards—SLEW and OUT_DRIVE Settings

I/O Standards

OUT_DRIVE (mA)

Slew2 4 6 8 12 16 24

LVTTL/LVCMOS 3.3 V 

High Low

LVCMOS 2.5 V 

High Low

LVCMOS 2.5 V/5.0 V 

High Low

LVCMOS 1.8 V  – High Low

LVCMOS 1.5 V    – – High Low

Device Architecture

2-153 Revision 8

Table 2-81 • Fusion Pro I/O Default Attributes

I/O Standards

SLEW

(output only)

OUT_DRIVE

(output only)

SKEW (tribuf and bibuf only)

RES_PULL

OUT_LOAD (output only)

COMBINE_REGISTER

IN_DELAY (input only)

IN_DELAY_VAL (input only)

SCHMITT_TRIGGER (input only)

LVTTL/LVCMO

S 3.3 V

Refer to the following

tables for more

information:

Table 2-78 on page 2-152

Table 2-79 on page 2-152

Table 2-80 on page 2-152

Refer to the following

tables for more

information:

Table 2-78 on page 2-152

Table 2-79 on page 2-152

Table 2-80 on page 2-152

Off None 35 pF – Off 0 Off

LVCMOS 2.5 V Off None 35 pF – Off 0 Off

LVCMOS

2.5/5.0 V

Off None 35 pF – Off 0 Off

LVCMOS 1.8 V Off None 35 pF – Off 0 Off

LVCMOS 1.5 V Off None 35 pF – Off 0 Off

PCI (3.3 V) Off None 10 pF – Off 0 Off

PCI-X (3.3 V) Off None 10 pF – Off 0 Off

GTL+ (3.3 V) Off None 10 pF – Off 0 Off

GTL+ (2.5 V) Off None 10 pF – Off 0 Off

GTL (3.3 V) Off None 10 pF – Off 0 Off

GTL (2.5 V) Off None 10 pF – Off 0 Off

HSTL Class I Off None 20 pF – Off 0 Off

HSTL Class II Off None 20 pF – Off 0 Off

SSTL2

Class I and II

Off None 30 pF – Off 0 Off

SSTL3

Class I and II

Off None 30 pF – Off 0 Off

LVDS, BLVDS,

M-LVDS

Off None 0 pF – Off 0 Off

LVPECL Off None 0 pF – Off 0 Off

Fusion Family of Mixed Signal FPGAs

Revision 8 2-154

Table 2-82 • Advanced I/O Default Attributes

I/O Standards SLEW (output only) OUT_DRIVE (output only)

SKEW (tribuf and bibuf only)

RES_PULL

OUT_LOAD (output only)

COMBINE_REGISTER

LVTTL/LVCMOS 3.3 V Refer to the following

tables for more

information:

Table 2-78 on page 2-152

Table 2-79 on page 2-152

Table 2-80 on page 2-152

Refer to the following tables

for more information:

Table 2-78 on page 2-152

Table 2-79 on page 2-152

Table 2-80 on page 2-152

Off None 35 pF –

LVCMOS 2.5 V Off None 35 pF –

LVCMOS 2.5/5.0 V Off None 35 pF –

LVCMOS 1.8 V Off None 35 pF –

LVCMOS 1.5 V Off None 35 pF –

PCI (3.3 V) Off None 10 pF –

PCI-X (3.3 V) Off None 10 pF –

LVDS, BLVDS, M-LVDS Off None – –

LVPECL Off None – –

Device Architecture

2-155 Revision 8

Table 2-83 • Fusion Pro I/O Supported Standards and Corresponding VREF and VTT Voltages

I/O Standard

Input/Output Supply

Voltage (VCCI_TYP)

Input Reference Voltage

(VREF_TYP)

Board Termination Voltage

(VTT_TYP)

LVTTL/LVCMOS 3.3 V 3.30 V – –

LVCMOS 2.5 V 2.50 V – –

LVCMOS 2.5 V / 5.0 V

Input

2.50 V – –

LVCMOS 1.8 V 1.80 V – –

LVCMOS 1.5 V 1.50 V – –

PCI 3.3 V 3.30 V – –

PCI-X 3.3 V 3.30 V – –

GTL+ 3.3 V 3.30 V 1.00 V 1.50 V

GTL+ 2.5 V 2.50 V 1.00 V 1.50 V

GTL 3.3 V 3.30 V 0.80 V 1.20 V

GTL 2.5 V 2.50 V 0.80 V 1.20 V

HSTL Class I 1.50 V 0.75 V 0.75 V

HSTL Class II 1.50 V 0.75 V 0.75 V

SSTL3 Class I 3.30 V 1.50 V 1.50 V

SSTL3 Class II 3.30 V 1.50 V 1.50 V

SSTL2 Class I 2.50 V 1.25 V 1.25 V

SSTL2 Class II 2.50 V 1.25 V 1.25 V

LVDS, BLVDS, M-LVDS 2.50 V – –

LVPECL 3.30 V – –

Fusion Family of Mixed Signal FPGAs

Revision 8 2-156

I/O Software Support

In the Fusion development software, default settings have been defined for the various I/O standards

supported. Changes can be made to the default settings via the use of attributes; however, not all I/O

attributes are applicable for all I/O standards. Ta b le 2- 8 4 and Table 2 - 85 list the valid I/O attributes that

can be manipulated by the user for each I/O standard.

Single-ended I/O standards in Fusion support up to five different drive strengths.

Table 2-84 • Fusion Standard and Advanced I/O Attributes vs. I/O Standard Applications

I/O Standards

SLEW

(output

only)

OUT_DRIVE

(output only)

SKEW

(all macros

with OE)* RES_PULL

OUT_LOAD

(output only) COMBINE_REGISTER

LVTTL/LVCMOS 3.3 V 3 3 3 3 3 3

LVCMOS 2.5 V 3 3 3 3 3 3

LVCMOS 2.5/5.0 V 3 3 3 3 3 3

LVCMOS 1.8 V 3 3 3 3 3 3

LVCMOS 1.5 V 3 3 3 3 3 3

PCI (3.3 V) 3 3 3

PCI-X (3.3 V) 3 3 3 3

LVDS, BLVDS, M-LVDS 3 3

LVPECL 3

Note: * This feature does not apply to the standard I/O banks, which are the north I/O banks of AFS090 and AFS250

devices

Device Architecture

2-157 Revision 8

Table 2-85 • Fusion Pro I/O Attributes vs. I/O Standard Applications

I/O Standards

SLEW (output only)

OUT_DRIVE (output only)

SKEW (all macros with OE)

RES_PULL

OUT_LOAD (output only)

COMBINE_REGISTER

IN_DELAY (input only)

IN_DELAY_VAL (input only)

SCHMITT_TRIGGER (input only)

HOT_SWAPPABLE

LVTTL/LVCMOS 3.3 V 3 3 3 3 3 3 3 3 3 3

LVCMOS 2.5 V 3 3 3 3 3 3 3 3 3 3

LVCMOS 2.5/5.0 V 3 3 3 3 3 3 3 3 3 3

LVCMOS 1.8 V 3 3 3 3 3 3 3 3 3 3

LVCMOS 1.5 V 3 3 3 3 3 3 3 3 3 3

PCI (3.3 V) 3 3 3 3 3

PCI-X (3.3 V) 3 3 3 3 3 3

GTL+ (3.3 V) 3 3 3 3 3 3

GTL+ (2.5 V) 3 3 3 3 3 3

GTL (3.3 V) 3 3 3 3 3 3

GTL (2.5 V) 3 3 3 3 3 3

HSTL Class I 3 3 3 3 3 3

HSTL Class II 3 3 3 3 3 3

SSTL2 Class I and II 3 3 3 3 3 3

SSTL3 Class I and II 3 3 3 3 3 3

LVDS, BLVDS, M-LVDS 3 3 3 3 3

LVPECL 3 3 3 3

Fusion Family of Mixed Signal FPGAs

Revision 8 2-158

User I/O Naming Convention

Due to the comprehensive and flexible nature of Fusion device user I/Os, a naming scheme is used to

show the details of the I/O (Figure 2-113 on page 2-158 and Figure 2-114 on page 2-159). The name

identifies to which I/O bank it belongs, as well as the pairing and pin polarity for differential I/Os.

I/O Nomenclature = Gmn/IOuxwByVz

Gmn is only used for I/Os that also have CCC access—i.e., global pins.

G = Global

m = Global pin location associated with each CCC on the device: A (northwest corner), B (northeast corner), C

(east middle), D (southeast corner), E (southwest corner), and F (west middle).

n = Global input MUX and pin number of the associated Global location m, either A0, A1, A2, B0, B1, B2, C0, C1,

or C2. Figure 2-22 on page 2-25 shows the three input pins per clock source MUX at CCC location m.

u = I/O pair number in the bank, starting at 00 from the northwest I/O bank and proceeding in a clockwise

direction.

x = P (Positive) or N (Negative) for differential pairs, or R (Regular – single-ended) for the I/Os that support single-

ended and voltage-referenced I/O standards only. U (Positive-LVDS only) or V (Negative-LVDS only) restrict

the I/O differential pair from being selected as an LVPECL pair.

w = D (Differential Pair), P (Pair), or S (Single-Ended). D (Differential Pair) if both members of the pair are bonded

out to adjacent pins or are separated only by one GND or NC pin; P (Pair) if both members of the pair are

bonded out but do not meet the adjacency requirement; or S (Single-Ended) if the I/O pair is not bonded out.

For Differential (D) pairs, adjacency for ball grid packages means only vertical or horizontal. Diagonal

adjacency does not meet the requirements for a true differential pair.

B = Bank

y = Bank number (0–3). The Bank number starts at 0 from the northwest I/O bank and proceeds in a clockwise

direction.

V = Reference voltage

z = Minibank number

Figure 2-113 • Naming Conventions of Fusion Devices with Three Digital I/O Banks

CCC

"A"

CCC

"E"

CCC/PLL

"F"

CCC

"B"

CCC

"D"

CCC

"C"

AFS090

Standard I/O Bank

Analog Quads

Advanced I/O Bank

AFS250

Bank 3

Bank 1

Bank 2 (analog)

Bank 0

Device Architecture

2-159 Revision 8

Figure 2-114 • Naming Conventions of Fusion Devices with Four I/O Banks

AFS600

AFS1500

Bank 4

Bank 2

Bank 3 (analog)

Bank 0 Bank 1

CCC

"A"

CCC

"E"

CCC/PLL

"F"

CCC

"B"

CCC

"D"

CCC/PLL

"C"

Pro I/O Bank

Analog Quads

Advnaced I/O Bank

Advanced I/O Bank

Fusion Family of Mixed Signal FPGAs

Revision 8 2-160

User I/O Characteristics

Timing Model

Figure 2-115 • Timing Model

Operating Conditions: –2 Speed, Commercial Temperature Range (TJ=70°C),

Worst-Case VCC = 1.425 V

DQ DQ

Combinational Cell

I/O Module

(Non-Registered)

LVPECL (Pro IO banks)

LVPECL

(Pro IO Banks)

LVDS,

BLVDS,

M-LVDS (Pro IO Banks)

GTL+ 3.3 V

Combinational Cell

LVTTL/LVCMOS 3.3 V (Pro I/O banks)

Output drive strength = 24 mA

High slew rate

LVCMOS 1.5 V (Pro IO banks)

Output drive strength = 12 mA

High slew

LVTTL/LVCMOS 3.3 V (Pro I/O banks)

Output drive strength = 12 mA

High slew rate

IInput LVTTL/LVCMOS

3.3 V (Pro IO banks)

Input LVTTL/LVCMOS

3.3 V (Pro IO banks)

Input LVTTL/LVCMOS

3.3 V (Pro IO banks)

I/O Module

(Non-Registered)

I/O Module

(Non-Registered)

I/O Module

(Non-Registered)

I/O Module

(Registered)

I/O Module

(Registered)

I/O Module

(Non-Registered)

= 0.56 ns t

= 0.49 ns

= 1.60 ns

= 0.87 ns t

= 2.74 ns

= 0.51 ns

= 0.47 ns

OCLKQ

= 0.59 ns

OSUD

= 0.31 ns

= 0.90 ns

= 1.53 ns

= 3.30 ns

= 2.39 ns

CLKQ

= 0.55 ns

SUD

= 0.43 ns

= 0.90 ns

CLKQ

= 0.55 ns

SUD

= 0.43 ns

= 1.36 ns

= 0.90 ns

= 1.22 ns

ICLKQ

= 0.24 ns

ISUD

= 0.26 ns

Device Architecture

2-161 Revision 8

Figure 2-116 • Input Buffer Timing Model and Delays (example)

tPY = MAX(tPY (R), tPY (F))

tPYs = MAX(tPYS (R), tPYS (F))

tDIN = MAX(tDIN (R), tDIN (F))

tPY

(R)

PAD

Vtrip

GND tPY

(F)

Vtrip

50%

VIH

VCC

VIL

tPYS

(R)

tPYS

(F)

tDIN

(R)

DIN

GND tDIN

(F)

50%50%

VCC

PAD Y

tPY

tPYS

CLK

I/O interface

DIN

tDIN

To Array

Fusion Family of Mixed Signal FPGAs

Revision 8 2-162

Figure 2-117 • Output Buffer Model and Delays (example)

tDP

(R)

PAD VOL

tDP

(F)

Vtrip

VOH

VCC

D50% 50%

VCC

0 V

DOUT 50% 50% 0 V

tDOUT

(R)

tDOUT

(F)

From Array

PAD

tDP

Std

Load

CLK

I/O Interface

DOUT

tDOUT

tDP = MAX(tDP(R), tDP(F))

tDOUT = MAX(tDOUT(R), tDOUT(F))

Device Architecture

2-163 Revision 8

Figure 2-118 • Tristate Output Buffer Timing Model and Delays (example)

CLK

10% VCCI

tZL

trip

50%

tHZ

90% VCCI

tZH

trip

50% 50% t

50%

EOUT

PAD

E50%

EOUT (R)

50%

EOUT (F)

PAD

DOUT

EOUT

I/O Interface

EOUT

ZLS

trip

50%

ZHS

trip

50%

EOUT

PAD

E50% 50%

EOUT (R)

EOUT (F)

50%

VCC

VCCI

VCC

VOH

VOL

, t

ZLS

, t

ZHS

EOUT

= MAX(t

EOUT

(R). t

EOUT

(F))

Fusion Family of Mixed Signal FPGAs

Revision 8 2-164

Overview of I/O Performance

Summary of I/O DC Input and Output Levels – Default I/O Software Settings

Table 2-86 • Summary of Maximum and Minimum DC Input and Output Levels Applicable to Commercial and

Industrial Conditions

Applicable to Pro I/Os

I/O Standard

Drive

Strength

Slew

Rate

VIL VIH VOL VOH IOL IOH

Min.

Max.

Min.

Max.

Min.

VmAmA

3.3 V LVTTL /

3.3 V LVCMOS

12 mA High –0.3 0.8 2 3.6 0.4 2.4 12 12

2.5 V LVCMOS 12 mA High –0.3 0.7 1.7 3.6 0.7 1.7 12 12

1.8 V LVCMOS 12 mA High –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.45 VCCI – 0.45 12 12

1.5 V LVCMOS 12 mA High –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.25 * VCCI 0.75 * VCCI 12 12

3.3 V PCI Per PCI Specification

3.3 V PCI-X Per PCI-X Specification

3.3 V GTL 20 mA2 High –0.3 VREF – 0.05 VREF + 0.05 3.6 0.4 – 20 20

2.5 V GTL 20 mA2 High –0.3 VREF – 0.05 VREF + 0.05 3.6 0.4 – 20 20

3.3 V GTL+ 35 mA High –0.3 VREF – 0.1 VREF + 0.1 3.6 0.6 – 35 35

2.5 V GTL+ 33 mA High –0.3 VREF – 0.1 VREF + 0.1 3.6 0.6 – 33 33

HSTL (I) 8 mA High –0.3 VREF – 0.1 VREF + 0.1 3.6 0.4 VCCI – 0.4 8 8

HSTL (II) 15 mA2 High –0.3 VREF – 0.1 VREF + 0.1 3.6 0.4 VCCI – 0.4 15 15

SSTL2 (I) 15 mA High –0.3 VREF – 0.2 VREF + 0.2 3.6 0.54 VCCI – 0.62 15 15

SSTL2 (II) 18 mA High –0.3 VREF – 0.2 VREF + 0.2 3.6 0.35 VCCI – 0.43 18 18

SSTL3 (I) 14 mA High –0.3 VREF – 0.2 VREF + 0.2 3.6 0.7 VCCI – 1.1 14 14

SSTL3 (II) 21 mA High –0.3 VREF – 0.2 VREF + 0.2 3.6 0.5 VCCI – 0.9 21 21

Notes:

1. Currents are measured at 85°C junction temperature.

2. Output drive strength is below JEDEC specification.

3. Output slew rate can be extracted by the IBIS models.

Table 2-87 • Summary of Maximum and Minimum DC Input and Output Levels Applicable to Commercial and

Industrial Conditions

Applicable to Advanced I/Os

I/O Standard

Drive

Strength

Slew

Rate

VIL VIH VOL VOH IOL IOH

Min.

Max.

Min.

Max.

Min.

VmAmA

3.3 V LVTTL /

3.3 V LVCMOS

12 mA High –0.3 0.8 2 3.6 0.4 2.4 12 12

2.5 V LVCMOS 12 mA High –0.3 0.7 1.7 2.7 0.7 1.7 12 12

1.8 V LVCMOS 12 mA High –0.3 0.35 * VCCI 0.65 * VCCI 1.9 0.45 VCCI – 0.45 12 12

1.5 V LVCMOS 12 mA High –0.3 0.35 * VCCI 0.65 * VCCI 1.575 0.25 * VCCI 0.75 * VCCI 12 12

3.3 V PCI Per PCI specifications

3.3 V PCI-X Per PCI-X specifications

Note: Currents are measured at 85°C junction temperature.

Device Architecture

2-165 Revision 8

Table 2-88 • Summary of Maximum and Minimum DC Input and Output Levels Applicable to Commercial and

Industrial Conditions

Applicable to Standard I/Os

I/O Standard

Drive

Strength

Slew

Rate

VIL VIH VOL VOH IOL IOH

Min.

Max.

Min.

Max.

Min.

VmAmA

3.3 V LVTTL /

3.3 V LVCMOS

8 mA High –0.3 0.8 2 3.6 0.4 2.4 8 8

2.5 V LVCMOS 8 mA High –0.3 0.7 1.7 3.6 0.7 1.7 8 8

1.8 V LVCMOS 4 mA High –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.45 VCCI – 0.45 4 4

1.5 V LVCMOS 2 mA High –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.25 * VCCI 0.75 * VCCI 2 2

Note: Currents are measured at 85°C junction temperature.

Table 2-89 • Summary of Maximum and Minimum DC Input Levels Applicable to Commercial and Industrial

Conditions

Applicable to All I/O Bank Types

DC I/O Standards

Commercial1Industrial2

IIL3IIH4IIL3IIH4

µA µA µA µA

3.3 V LVTTL / 3.3 V LVCMOS 10 10 15 15

2.5 V LVCMOS 10 10 15 15

1.8 V LVCMOS 10 10 15 15

1.5 V LVCMOS 10 10 15 15

3.3 V PCI 10 10 15 15

3.3 V PCI-X 10 10 15 15

3.3 V GTL 10 10 15 15

2.5 V GTL 10 10 15 15

3.3 V GTL+ 10 10 15 15

2.5 V GTL+ 10 10 15 15

HSTL (I) 10 10 15 15

HSTL (II) 10 10 15 15

SSTL2 (I) 10 10 15 15

SSTL2 (II) 10 10 15 15

SSTL3 (I) 10 10 15 15

SSTL3 (II) 10 10 15 15

Notes:

1. Commercial range (0°C < TJ < 85°C)

2. Industrial range (–40°C < TJ < 100°C)

3. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

4. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-166

Summary of I/O Timing Characteristics – Default I/O Software Settings

Table 2-90 • Summary of AC Measuring Points

Applicable to All I/O Bank Types

Standard

Input Reference Voltage

(VREF_TYP)

Board Termination Voltage

(VTT_REF)

Measuring Trip Point

(Vtrip)

3.3 V LVTTL / 3.3 V LVCMOS – – 1.4 V

2.5 V LVCMOS – – 1.2 V

1.8 V LVCMOS – – 0.90 V

1.5 V LVCMOS – – 0.75 V

3.3 V PCI – – 0.285 * VCCI (RR)

0.615 * VCCI (FF))

3.3 V PCI-X – – 0.285 * VCCI (RR)

0.615 * VCCI (FF)

3.3 V GTL 0.8 V 1.2 V VREF

2.5 V GTL 0.8 V 1.2 V VREF

3.3 V GTL+ 1.0 V 1.5 V VREF

2.5 V GTL+ 1.0 V 1.5 V VREF

HSTL (I) 0.75 V 0.75 V VREF

HSTL (II) 0.75 V 0.75 V VREF

SSTL2 (I) 1.25 V 1.25 V VREF

SSTL2 (II) 1.25 V 1.25 V VREF

SSTL3 (I) 1.5 V 1.485 V VREF

SSTL3 (II) 1.5 V 1.485 V VREF

LVDS – – Cross point

LVPECL – – Cross point

Table 2-91 • I/O AC Parameter Definitions

Parameter Definition

tDP Data to Pad delay through the Output Buffer

tPY Pad to Data delay through the Input Buffer with Schmitt trigger disabled

tDOUT Data to Output Buffer delay through the I/O interface

tEOUT Enable to Output Buffer Tristate Control delay through the I/O interface

tDIN Input Buffer to Data delay through the I/O interface

tPYS Pad to Data delay through the Input Buffer with Schmitt trigger enabled

tHZ Enable to Pad delay through the Output Buffer—High to Z

tZH Enable to Pad delay through the Output Buffer—Z to High

tLZ Enable to Pad delay through the Output Buffer—Low to Z

tZL Enable to Pad delay through the Output Buffer—Z to Low

tZHS Enable to Pad delay through the Output Buffer with delayed enable—Z to High

tZLS Enable to Pad delay through the Output Buffer with delayed enable—Z to Low

Device Architecture

2-167 Revision 8

Table 2-92 • Summary of I/O Timing Characteristics – Software Default Settings

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = I/O Standard Dependent

Applicable to Pro I/Os

I/O Standard

Drive Strength (mA)

Slew Rate

Capacitive Load (pF)

External Resistor (Ohm)

t DOUT

tDP

tDIN

tPY

tPYS

tEOUT

tZL

tZH

tLZ

tHZ

tZLS

tZHS

Units

3.3 V LVTTL/

3.3 V LVCMOS

12 mA High 35 – 0.49 2.74 0.03 0.90 1.17 0.32 2.79 2.14 2.45 2.70 4.46 3.81 ns

2.5 V LVCMOS 12 mA High 35 – 0.49 2.80 0.03 1.13 1.24 0.32 2.85 2.61 2.51 2.61 4.52 4.28 ns

1.8 V LVCMOS 12 mA High 35 – 0.49 2.83 0.03 1.08 1.42 0.32 2.89 2.31 2.79 3.16 4.56 3.98 ns

1.5 V LVCMOS 12 mA High 35 – 0.49 3.30 0.03 1.27 1.60 0.32 3.36 2.70 2.96 3.27 5.03 4.37 ns

3.3 V PCI Per

PCI

spec

High 10 25 20.49 2.09 0.03 0.78 1.25 0.32 2.13 1.49 2.45 2.70 3.80 3.16 ns

3.3 V PCI-X Per

PCI-X

spec

High 10 25 20.49 2.09 0.03 0.77 1.17 0.32 2.13 1.49 2.45 2.70 3.80 3.16 ns

3.3 V GTL 20 mA High 10 25 0.49 1.55 0.03 2.19 – 0.32 1.52 1.55 0.00 0.00 3.19 3.22 ns

2.5 V GTL 20 mA High 10 25 0.49 1.59 0.03 1.83 – 0.32 1.61 1.59 0.00 0.00 3.28 3.26 ns

3.3 V GTL+ 35 mA High 10 25 0.49 1.53 0.03 1.19 – 0.32 1.56 1.53 0.00 0.00 3.23 3.20 ns

2.5 V GTL+ 33 mA High 10 25 0.49 1.65 0.03 1.13 – 0.32 1.68 1.57 0.00 0.00 3.35 3.24 ns

HSTL (I) 8 mA High 20 50 0.49 2.37 0.03 1.59 – 0.32 2.42 2.35 0.00 0.00 4.09 4.02 ns

HSTL (II) 15 mA High 20 25 0.49 2.26 0.03 1.59 – 0.32 2.30 2.03 0.00 0.00 3.97 3.70 ns

SSTL2 (I) 17 mA High 30 50 0.49 1.59 0.03 1.00 – 0.32 1.62 1.38 0.00 0.00 3.29 3.05 ns

SSTL2 (II) 21 mA High 30 25 0.49 1.62 0.03 1.00 – 0.32 1.65 1.32 0.00 0.00 3.32 2.99 ns

SSTL3 (I) 16 mA High 30 50 0.49 1.72 0.03 0.93 – 0.32 1.75 1.37 0.00 0.00 3.42 3.04 ns

SSTL3 (II) 24 mA High 30 25 0.49 1.54 0.03 0.93 – 0.32 1.57 1.25 0.00 0.00 3.24 2.92 ns

LVDS 24 mA High – – 0.49 1.57 0.03 1.36 – – – – – – – – ns

LVPECL 24 mA High – – 0.49 1.60 0.03 1.22 – – – – – – – – ns

Notes:

1. For specific junction temperature and voltage-supply levels, refer to Table 3-6 on page 3-7 for derating values.

2. Resistance is used to measure I/O propagation delays as defined in PCI specifications. See Figure 2-123 on page 2-197

for connectivity. This resistor is not required during normal operation.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-168

Table 2-93 • Summary of I/O Timing Characteristics – Software Default Settings

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = I/O Standard Dependent

Applicable to Advanced I/Os

I/O Standard

Drive Strength (mA)

Slew Rate

Capacitive Load (pF)

External Resistor (Ohm)

t DOUT

tDP

tDIN

tPY

tEOUT

tZL

tZH

tLZ

tHZ

tZLS

tZHS

Units

3.3 V LVTTL/

3.3 V LVCMOS

12 mA High 35 pF – 0.49 2.64 0.03 0.90 0.32 2.69 2.11 2.40 2.68 4.36 3.78 ns

2.5 V LVCMOS 12 mA High 35 pF – 0.49 2.66 0.03 0.98 0.32 2.71 2.56 2.47 2.57 4.38 4.23 ns

1.8 V LVCMOS 12 mA High 35 pF – 0.49 2.64 0.03 0.91 0.32 2.69 2.27 2.76 3.05 4.36 3.94 ns

1.5 V LVCMOS 12 mA High 35 pF – 0.49 3.05 0.03 1.07 0.32 3.10 2.67 2.95 3.14 4.77 4.34 ns

3.3 V PCI Per PCI

spec

High 10 pF 25 20.49 2.00 0.03 0.65 0.32 2.04 1.46 2.40 2.68 3.71 3.13 ns

3.3 V PCI-X Per PCI-X

spec

High 10 pF 25 20.49 2.00 0.03 0.62 0.32 2.04 1.46 2.40 2.68 3.71 3.13 ns

LVDS 24 mA High – – 0.49 1.37 0.03 1.20 N/A N/A N/A N/A N/A N/A N/A ns

LVPECL 24 mA High – – 0.49 1.34 0.03 1.05 N/A N/A N/A N/A N/A N/A N/A ns

Notes:

1. For specific junction temperature and voltage-supply levels, refer to Table 3-6 on page 3-7 for derating values.

2. Resistance is used to measure I/O propagation delays as defined in PCI specifications. See Figure 2-123 on page 2-197

for connectivity. This resistor is not required during normal operation.

Table 2-94 • Summary of I/O Timing Characteristics – Software Default Settings

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = I/O Standard Dependent

Applicable to Standard I/Os

I/O Standard

Drive Strength (mA)

Slew Rate

Capacitive Load (pF)

External Resistor (Ohm)

t DOUT

tDP

tDIN

tPY

tEOUT

tZL

tZH

tLZ

tHZ

Units

3.3 V LVTTL/

3.3 V LVCMOS

8 mA High 35 pF – 0.49 3.29 0.03 0.75 0.32 3.36 2.80 1.79 2.01 ns

2.5 V LVCMOS 8 mA High 35pF – 0.49 3.56 0.03 0.96 0.32 3.40 3.56 1.78 1.91 ns

1.8 V LVCMOS 4 mA High 35pF – 0.49 4.74 0.03 0.90 0.32 4.02 4.74 1.80 1.85 ns

1.5 V LVCMOS 2 mA High 35pF – 0.49 5.71 0.03 1.06 0.32 4.71 5.71 1.83 1.83 ns

Note: For specific junction temperature and voltage-supply levels, refer to Table 3-6 on page 3-7 for derating values.

Device Architecture

2-169 Revision 8

Detailed I/O DC Characteristics

Table 2-95 • Input Capacitance

Symbol Definition Conditions Min. Max. Units

CIN Input capacitance VIN = 0, f = 1.0 MHz 8 pF

CINCLK Input capacitance on the clock pin VIN = 0, f = 1.0 MHz 8 pF

Table 2-96 • I/O Output Buffer Maximum Resistances 1

Standard Drive Strength

RPULL-DOWN

(ohms) 2

RPULL-UP

(ohms) 3

Applicable to Pro I/O Banks

3.3 V LVTTL / 3.3 V LVCMOS 4 mA 100 300

8 mA 50 150

12 mA 25 75

16 mA 17 50

24 mA 11 33

2.5 V LVCMOS 4 mA 100 200

8 mA 50 100

12 mA 25 50

16 mA 20 40

24 mA 11 22

1.8 V LVCMOS 2 mA 200 225

4 mA 100 112

6 mA 50 56

8 mA 50 56

12 mA 20 22

16 mA 20 22

1.5 V LVCMOS 2 mA 200 224

4 mA 100 112

6 mA 67 75

8 mA 33 37

12 mA 33 37

3.3 V PCI/PCI-X Per PCI/PCI-X specification 25 75

3.3 V GTL 20 mA 11 –

2.5 V GTL 20 mA 14 –

3.3 V GTL+ 35 mA 12 –

2.5 V GTL+ 33 mA 15 –

Notes:

1. These maximum values are provided for informational reasons only. Minimum output buffer resistance values depend

on VCC, drive strength selection, temperature, and process. For board design considerations and detailed output buffer

resistances, use the corresponding IBIS models located on the Microsemi SoC Products Group website:

http://www.microsemi.com/soc/techdocs/models/ibis.html.

2. R(PULL-DOWN-MAX) = VOLspec / IOLspec

3. R(PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspec

Fusion Family of Mixed Signal FPGAs

Revision 8 2-170

HSTL (I) 8 mA 50 50

HSTL (II) 15 mA 25 25

SSTL2 (I) 17 mA 27 31

SSTL2 (II) 21 mA 13 15

SSTL3 (I) 16 mA 44 69

SSTL3 (II) 24 mA 18 32

Applicable to Advanced I/O Banks

3.3 V LVTTL / 3.3 V LVCMOS 2 mA 100 300

4 mA 100 300

6 mA 50 150

8 mA 50 150

12 mA 25 75

16 mA 17 50

24 mA 11 33

2.5 V LVCMOS 2 mA 100 200

4 mA 100 200

6 mA 50 100

8 mA 50 100

12 mA 25 50

16 mA 20 40

24 mA 11 22

1.8 V LVCMOS 2 mA 200 225

4 mA 100 112

6 mA 50 56

8 mA 50 56

12 mA 20 22

16 mA 20 22

1.5 V LVCMOS 2 mA 200 224

4 mA 100 112

6 mA 67 75

8 mA 33 37

12 mA 33 37

3.3 V PCI/PCI-X Per PCI/PCI-X specification 25 75

Table 2-96 • I/O Output Buffer Maximum Resistances 1 (continued)

Standard Drive Strength

RPULL-DOWN

(ohms) 2

RPULL-UP

(ohms) 3

Notes:

1. These maximum values are provided for informational reasons only. Minimum output buffer resistance values depend

on VCC, drive strength selection, temperature, and process. For board design considerations and detailed output buffer

resistances, use the corresponding IBIS models located on the Microsemi SoC Products Group website:

http://www.microsemi.com/soc/techdocs/models/ibis.html.

2. R(PULL-DOWN-MAX) = VOLspec / IOLspec

3. R(PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspec

Device Architecture

2-171 Revision 8

Applicable to Standard I/O Banks

3.3 V LVTTL / 3.3 V LVCMOS 2 mA 100 300

4 mA 100 300

6 mA 50 150

8 mA 50 150

2.5 V LVCMOS 2 mA 100 200

4 mA 100 200

6 mA 50 100

8 mA 50 100

1.8 V LVCMOS 2 mA 200 225

4 mA 100 112

1.5 V LVCMOS 2 mA 200 224

Table 2-97 • I/O Weak Pull-Up/Pull-Down Resistances

Minimum and Maximum Weak Pull-Up/Pull-Down Resistance Values

VCCI

R(WEAK PULL-UP)1

(ohms)

R(WEAK PULL-DOWN)2

(ohms)

Min. Max. Min. Max.

3.3 V 10 k 45 k 10 k 45 k

2.5 V 11 k 55 k 12 k 74 k

1.8 V 18 k 70 k 17 k 110 k

1.5 V 19 k 90 k 19 k 140 k

Notes:

1. R(WEAK PULL-UP-MAX) = (VCCImax – VOHspec) / IWEAK PULL-UP-MIN

2. R(WEAK PULL-DOWN-MAX) = VOLspec / IWEAK PULL-DOWN-MIN

Table 2-96 • I/O Output Buffer Maximum Resistances 1 (continued)

Standard Drive Strength

RPULL-DOWN

(ohms) 2

RPULL-UP

(ohms) 3

Notes:

1. These maximum values are provided for informational reasons only. Minimum output buffer resistance values depend

on VCC, drive strength selection, temperature, and process. For board design considerations and detailed output buffer

resistances, use the corresponding IBIS models located on the Microsemi SoC Products Group website:

http://www.microsemi.com/soc/techdocs/models/ibis.html.

2. R(PULL-DOWN-MAX) = VOLspec / IOLspec

3. R(PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspec

Fusion Family of Mixed Signal FPGAs

Revision 8 2-172

Table 2-98 • I/O Short Currents IOSH/IOSL

Drive Strength IOSH (mA)* IOSL (mA)*

Applicable to Pro I/O Banks

3.3 V LVTTL / 3.3 V LVCMOS 4 mA 25 27

8 mA 51 54

12 mA 103 109

16 mA 132 127

24 mA 268 181

2.5 V LVCMOS 4 mA 16 18

8 mA 32 37

12 mA 65 74

16 mA 83 87

24 mA 169 124

1.8 V LVCMOS 2 mA 9 11

4 mA 17 22

6 mA 35 44

8 mA 45 51

12 mA 91 74

16 mA 91 74

1.5 V LVCMOS 2 mA 13 16

4 mA 25 33

6 mA 32 39

8 mA 66 55

12 mA 66 55

Applicable to Advanced I/O Banks

3.3 V LVTTL / 3.3 V LVCMOS 2 mA 25 27

4 mA 25 27

6 mA 51 54

8 mA 51 54

12 mA 103 109

16 mA 132 127

24 mA 268 181

3.3 V LVCMOS 2 mA 25 27

4 mA 25 27

6 mA 51 54

8 mA 51 54

12 mA 103 109

16 mA 132 127

24 mA 268 181

Note: *TJ = 100°C

Device Architecture

2-173 Revision 8

The length of time an I/O can withstand IOSH/IOSL events depends on the junction temperature. The

reliability data below is based on a 3.3 V, 36 mA I/O setting, which is the worst case for this type of

analysis.

For example, at 100°C, the short current condition would have to be sustained for more than six months

to cause a reliability concern. The I/O design does not contain any short circuit protection, but such

protection would only be needed in extremely prolonged stress conditions.

2.5 V LVCMOS 2 mA 16 18

4 mA 16 18

6 mA 32 37

8 mA 32 37

12 mA 65 74

16 mA 83 87

24 mA 169 124

1.8 V LVCMOS 2 mA 9 11

4 mA 17 22

6 mA 35 44

8 mA 45 51

12 mA 91 74

16 mA 91 74

1.5 V LVCMOS 2 mA 13 16

4 mA 25 33

6 mA 32 39

8 mA 66 55

12 mA 66 55

3.3 V PCI/PCI-X Per PCI/PCI-X

specification

103 109

Applicable to Standard I/O Banks

3.3 V LVTTL / 3.3 V LVCMOS 2 mA 25 27

4 mA 25 27

6 mA 51 54

8 mA 51 54

2.5 V LVCMOS 2 mA 16 18

4 mA 16 18

6 mA 32 37

8 mA 32 37

1.8 V LVCMOS 2 mA 9 11

4 mA 17 22

1.5 V LVCMOS 2 mA 13 16

Table 2-98 • I/O Short Currents IOSH/IOSL (continued)

Drive Strength IOSH (mA)* IOSL (mA)*

Note: *TJ = 100°C

Fusion Family of Mixed Signal FPGAs

Revision 8 2-174

Table 2-99 • Short Current Event Duration before Failure

Temperature Time Before Failure

–40°C >20 years

0°C >20 years

25°C >20 years

70°C 5 years

85°C 2 years

100°C 6 months

Table 2-100 • Schmitt Trigger Input Hysteresis

Hysteresis Voltage Value (typ.) for Schmitt Mode Input Buffers

Input Buffer Configuration Hysteresis Value (typ.)

3.3 V LVTTL/LVCMOS/PCI/PCI-X (Schmitt trigger mode) 240 mV

2.5 V LVCMOS (Schmitt trigger mode) 140 mV

1.8 V LVCMOS (Schmitt trigger mode) 80 mV

1.5 V LVCMOS (Schmitt trigger mode) 60 mV

Table 2-101 • I/O Input Rise Time, Fall Time, and Related I/O Reliability

Input Buffer Input Rise/Fall Time (min.) Input Rise/Fall Time (max.) Reliability

LVTTL/LVCMOS (Schmitt trigger

disabled)

No requirement 10 ns* 20 years (100°C)

LVTTL/LVCMOS (Schmitt trigger

enabled)

No requirement No requirement, but input

noise voltage cannot exceed

Schmitt hysteresis

20 years (100°C)

HSTL/SSTL/GTL No requirement 10 ns* 10 years (100°C)

LVDS/BLVDS/M-LVDS/LVPECL No requirement 10 ns* 10 years (100°C)

Note: * The maximum input rise/fall time is related only to the noise induced into the input buffer trace. If the noise is

low, the rise time and fall time of input buffers, when Schmitt trigger is disabled, can be increased beyond the

maximum value. The longer the rise/fall times, the more susceptible the input signal is to the board noise.

Microsemi recommends signal integrity evaluation/characterization of the system to ensure there is no excessive

noise coupling into input signals.

Device Architecture

2-175 Revision 8

Single-Ended I/O Characteristics

3.3 V LVTTL / 3.3 V LVCMOS

Low-Voltage Transistor–Transistor Logic is a general-purpose standard (EIA/JESD) for 3.3 V

applications. It uses an LVTTL input buffer and push-pull output buffer. The 3.3 V LVCMOS standard is

supported as part of the 3.3 V LVTTL support.

Table 2-102 • Minimum and Maximum DC Input and Output Levels

3.3 V LVTTL /

3.3 V LVCMOS VIL VIH VOL VOH IOL IOH IOSL IOSH IIL1IIH2

Drive Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

Applicable to Pro I/O Banks

4 mA –0.3 0.8 2 3.6 0.4 2.4 4 4 27 25 10 10

8 mA –0.3 0.8 2 3.6 0.4 2.4 8 8 54 51 10 10

12 mA –0.3 0.8 23.6 0.4 2.4 12 12 109 103 10 10

16 mA –0.3 0.8 2 3.6 0.4 2.4 16 16 127 132 10 10

24 mA –0.3 0.8 2 3.6 0.4 2.4 24 24 181 268 10 10

Applicable to Advanced I/O Banks

2 mA –0.3 0.8 2 3.6 0.4 2.4 2 2 27 25 10 10

4 mA –0.3 0.8 2 3.6 0.4 2.4 4 4 27 25 10 10

6 mA –0.3 0.8 2 3.6 0.4 2.4 6 6 54 51 10 10

8 mA –0.3 0.8 2 3.6 0.4 2.4 8 8 54 51 10 10

12 mA –0.3 0.8 23.6 0.4 2.4 12 12 109 103 10 10

16 mA –0.3 0.8 2 3.6 0.4 2.4 16 16 127 132 10 10

24 mA –0.3 0.8 2 3.6 0.4 2.4 24 24 181 268 10 10

Applicable to Standard I/O Banks

2 mA –0.3 0.8 2 3.6 0.4 2.4 2 2 27 25 10 10

4 mA –0.3 0.8 2 3.6 0.4 2.4 4 4 27 25 10 10

6 mA –0.3 0.8 2 3.6 0.4 2.4 6 6 54 51 10 10

8 mA –0.3 0.8 23.6 0.4 2.4 8 8 54 51 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges.

3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.

4. Currents are measured at 85°C junction temperature.

5. Software default selection highlighted in gray.

Figure 2-119 • AC Loading

Test Point

Enable Path

Data Path 35 pF

R = 1 k R to VCCI for tLZ / tZL / tZLS

R to GND for tHZ / tZH / tZHS

35 pF for tZH / tZHS / tZL / tZLS

35 pF for tHZ / tLZ

Fusion Family of Mixed Signal FPGAs

Revision 8 2-176

Timing Characteristics

Table 2-103 • AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) CLOAD (pF)

03.31.4–35

Note: *Measuring point = Vtrip. See Table 2-90 on page 2-166 for a complete table of trip points.

Table 2-104 • 3.3 V LVTTL / 3.3 V LVCMOS Low Slew

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 3.0 V

Applicable to Pro I/Os

Drive

Strength

Speed

Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

4 mA Std. 0.66 11.01 0.04 1.20 1.57 0.43 11.21 9.05 2.69 2.44 13.45 11.29 ns

–1 0.56 9.36 0.04 1.02 1.33 0.36 9.54 7.70 2.29 2.08 11.44 9.60 ns

–2 0.49 8.22 0.03 0.90 1.17 0.32 8.37 6.76 2.01 1.82 10.04 8.43 ns

8 mA Std. 0.66 7.86 0.04 1.20 1.57 0.43 8.01 6.44 3.04 3.06 10.24 8.68 ns

–1 0.56 6.69 0.04 1.02 1.33 0.36 6.81 5.48 2.58 2.61 8.71 7.38 ns

–2 0.49 5.87 0.03 0.90 1.17 0.32 5.98 4.81 2.27 2.29 7.65 6.48 ns

12 mA Std. 0.66 6.03 0.04 1.20 1.57 0.43 6.14 5.02 3.28 3.47 8.37 7.26 ns

–1 0.56 5.13 0.04 1.02 1.33 0.36 5.22 4.27 2.79 2.95 7.12 6.17 ns

–2 0.49 4.50 0.03 0.90 1.17 0.32 4.58 3.75 2.45 2.59 6.25 5.42 ns

16 mA Std. 0.66 5.62 0.04 1.20 1.57 0.43 5.72 4.72 3.32 3.58 7.96 6.96 ns

–1 0.56 4.78 0.04 1.02 1.33 0.36 4.87 4.02 2.83 3.04 6.77 5.92 ns

–2 0.49 4.20 0.03 0.90 1.17 0.32 4.27 3.53 2.48 2.67 5.94 5.20 ns

24 mA Std. 0.66 5.24 0.04 1.20 1.57 0.43 5.34 4.69 3.39 3.96 7.58 6.93 ns

–1 0.56 4.46 0.04 1.02 1.33 0.36 4.54 3.99 2.88 3.37 6.44 5.89 ns

–2 0.49 3.92 0.03 0.90 1.17 0.32 3.99 3.50 2.53 2.96 5.66 5.17 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Device Architecture

2-177 Revision 8

Table 2-105 • 3.3 V LVTTL / 3.3 V LVCMOS High Slew

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 3.0 V

Applicable to Pro I/Os

Drive

Strength

Speed

Grade tDOUT tDP tDIN tPY tPYS

tEOU

TtZL tZH tLZ tHZ tZLS tZHS

Units

4 mA Std. 0.66 7.88 0.04 1.20 1.57 0.43 8.03 6.70 2.69 2.59 10.26 8.94 ns

–1 0.56 6.71 0.04 1.02 1.33 0.36 6.83 5.70 2.29 2.20 8.73 7.60 ns

–2 0.49 5.89 0.03 0.90 1.17 0.32 6.00 5.01 2.01 1.93 7.67 6.67 ns

8 mA Std. 0.66 5.08 0.04 1.20 1.57 0.43 5.17 4.14 3.05 3.21 7.41 6.38 ns

–1 0.56 4.32 0.04 1.02 1.33 0.36 4.40 3.52 2.59 2.73 6.30 5.43 ns

–2 0.49 3.79 0.03 0.90 1.17 0.32 3.86 3.09 2.28 2.40 5.53 4.76 ns

12 mA Std. 0.66 3.67 0.04 1.20 1.57 0.43 3.74 2.87 3.28 3.61 5.97 5.11 ns

–1 0.56 3.12 0.04 1.02 1.33 0.36 3.18 2.44 2.79 3.07 5.08 4.34 ns

–2 0.49 2.74 0.03 0.90 1.17 0.32 2.79 2.14 2.45 2.70 4.46 3.81 ns

16 mA Std. 0.66 3.46 0.04 1.20 1.57 0.43 3.53 2.61 3.33 3.72 5.76 4.84 ns

–1 0.56 2.95 0.04 1.02 1.33 0.36 3.00 2.22 2.83 3.17 4.90 4.12 ns

–2 0.49 2.59 0.03 0.90 1.17 0.32 2.63 1.95 2.49 2.78 4.30 3.62 ns

24 mA Std. 0.66 3.21 0.04 1.20 1.57 0.43 3.27 2.16 3.39 4.13 5.50 4.39 ns

–1 0.56 2.73 0.04 1.02 1.33 0.36 2.78 1.83 2.88 3.51 4.68 3.74 ns

–2 0.49 2.39 0.03 0.90 1.17 0.32 2.44 1.61 2.53 3.08 4.11 3.28 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-178

Table 2-106 • 3.3 V LVTTL / 3.3 V LVCMOS Low Slew

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 3.0 V

Applicable to Advanced I/Os

Drive

Strength

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

4 mA Std. 0.66 10.26 0.04 1.20 0.43 10.45 8.90 2.64 2.46 12.68 11.13 ns

–1 0.56 8.72 0.04 1.02 0.36 8.89 7.57 2.25 2.09 10.79 9.47 ns

–2 0.49 7.66 0.03 0.90 0.32 7.80 6.64 1.98 1.83 9.47 8.31 ns

8 mA Std. 0.66 7.27 0.04 1.20 0.43 7.41 6.28 2.98 3.04 9.65 8.52 ns

–1 0.56 6.19 0.04 1.02 0.36 6.30 5.35 2.54 2.59 8.20 7.25 ns

–2 0.49 5.43 0.03 0.90 0.32 5.53 4.69 2.23 2.27 7.20 6.36 ns

12 mA Std. 0.66 5.58 0.04 1.20 0.43 5.68 4.87 3.21 3.42 7.92 7.11 ns

–1 0.56 4.75 0.04 1.02 0.36 4.84 4.14 2.73 2.91 6.74 6.05 ns

–2 0.49 4.17 0.03 0.90 0.32 4.24 3.64 2.39 2.55 5.91 5.31 ns

16 mA Std. 0.66 5.21 0.04 1.20 0.43 5.30 4.56 3.26 3.51 7.54 6.80 ns

–1 0.56 4.43 0.04 1.02 0.36 4.51 3.88 2.77 2.99 6.41 5.79 ns

–2 0.49 3.89 0.03 0.90 0.32 3.96 3.41 2.43 2.62 5.63 5.08 ns

24 mA Std. 0.66 4.85 0.04 1.20 0.43 4.94 4.54 3.32 3.88 7.18 6.78 ns

–1 0.56 4.13 0.04 1.02 0.36 4.20 3.87 2.82 3.30 6.10 5.77 ns

–2 0.49 3.62 0.03 0.90 0.32 3.69 3.39 2.48 2.90 5.36 5.06 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Device Architecture

2-179 Revision 8

Table 2-107 • 3.3 V LVTTL / 3.3 V LVCMOS High Slew

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 3.0 V

Applicable to Advanced I/Os

Drive

Strength

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

4 mA Std. 0.66 7.66 0.04 1.20 0.43 7.80 6.59 2.65 2.61 10.03 8.82 ns

–1 0.56 6.51 0.04 1.02 0.36 6.63 5.60 2.25 2.22 8.54 7.51 ns

–2 0.49 5.72 0.03 0.90 0.32 5.82 4.92 1.98 1.95 7.49 6.59 ns

8 mA Std. 0.66 4.91 0.04 1.20 0.43 5.00 4.07 2.99 3.20 7.23 6.31 ns

–1 0.56 4.17 0.04 1.02 0.36 4.25 3.46 2.54 2.73 6.15 5.36 ns

–2 0.49 3.66 0.03 0.90 0.32 3.73 3.04 2.23 2.39 5.40 4.71 ns

12 mA Std. 0.66 3.53 0.04 1.20 0.43 3.60 2.82 3.21 3.58 5.83 5.06 ns

–1 0.56 3.00 0.04 1.02 0.36 3.06 2.40 2.73 3.05 4.96 4.30 ns

–2 0.49 2.64 0.03 0.90 0.32 2.69 2.11 2.40 2.68 4.36 3.78 ns

16 mA Std. 0.66 3.33 0.04 1.20 0.43 3.39 2.56 3.26 3.68 5.63 4.80 ns

–1 0.56 2.83 0.04 1.02 0.36 2.89 2.18 2.77 3.13 4.79 4.08 ns

–2 0.49 2.49 0.03 0.90 0.32 2.53 1.91 2.44 2.75 4.20 3.58 ns

24 mA Std. 0.66 3.08 0.04 1.20 0.43 3.13 2.12 3.32 4.06 5.37 4.35 ns

–1 0.56 2.62 0.04 1.02 0.36 2.66 1.80 2.83 3.45 4.57 3.70 ns

–2 0.49 2.30 0.03 0.90 0.32 2.34 1.58 2.48 3.03 4.01 3.25 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Table 2-108 • 3.3 V LVTTL / 3.3 V LVCMOS Low Slew

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 3.0 V

Applicable to Standard I/Os

Drive

Strength

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

2 mA Std. 0.66 9.46 0.04 1.00 0.43 9.64 8.54 2.07 2.04 ns

–1 0.56 8.05 0.04 0.85 0.36 8.20 7.27 1.76 1.73 ns

–2 0.49 7.07 0.03 0.75 0.32 7.20 6.38 1.55 1.52 ns

4 mA Std. 0.66 9.46 0.04 1.00 0.43 9.64 8.54 2.07 2.04 ns

–1 0.56 8.05 0.04 0.85 0.36 8.20 7.27 1.76 1.73 ns

–2 0.49 7.07 0.03 0.75 0.32 7.20 6.38 1.55 1.52 ns

6 mA Std. 0.66 6.57 0.04 1.00 0.43 6.69 5.98 2.40 2.57 ns

–1 0.56 5.59 0.04 0.85 0.36 5.69 5.09 2.04 2.19 ns

–2 0.49 4.91 0.03 0.75 0.32 5.00 4.47 1.79 1.92 ns

8 mA Std. 0.66 6.57 0.04 1.00 0.43 6.69 5.98 2.40 2.57 ns

–1 0.56 5.59 0.04 0.85 0.36 5.69 5.09 2.04 2.19 ns

–2 0.49 4.91 0.03 0.75 0.32 5.00 4.47 1.79 1.92 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-180

Table 2-109 • 3.3 V LVTTL / 3.3 V LVCMOS High Slew

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 3.0 V

Applicable to Standard I/Os

Drive

Strength

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

2 mA Std. 0.66 7.07 0.04 1.00 0.43 7.20 6.23 2.07 2.15 ns

–1 0.56 6.01 0.04 0.85 0.36 6.12 5.30 1.76 1.83 ns

–2 20.49 5.28 0.03 0.75 0.32 5.37 4.65 1.55 1.60 ns

4 mA Std. 0.66 7.07 0.04 1.00 0.43 7.20 6.23 2.07 2.15 ns

–1 0.56 6.01 0.04 0.85 0.36 6.12 5.30 1.76 1.83 ns

–2 0.49 5.28 0.03 0.75 0.32 5.37 4.65 1.55 1.60 ns

6 mA Std. 0.66 4.41 0.04 1.00 0.43 4.49 3.75 2.39 2.69 ns

–1 0.56 3.75 0.04 0.85 0.36 3.82 3.19 2.04 2.29 ns

–2 0.49 3.29 0.03 0.75 0.32 3.36 2.80 1.79 2.01 ns

8 mA Std. 0.66 4.41 0.04 1.00 0.43 4.49 3.75 2.39 2.69 ns

–1 0.56 3.75 0.04 0.85 0.36 3.82 3.19 2.04 2.29 ns

–2 0.49 3.29 0.03 0.75 0.32 3.36 2.80 1.79 2.01 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Tabl e 3-7 on

page 3-9.

Device Architecture

2-181 Revision 8

2.5 V LVCMOS

Low-Voltage CMOS for 2.5 V is an extension of the LVCMOS standard (JESD8-5) used for general-

purpose 2.5 V applications.

Table 2-110 • Minimum and Maximum DC Input and Output Levels

2.5 V

LVCMOS VIL VIH VOL VOH IOL IOH IOSL IOSH IIL1IIH2

Drive

Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

Applicable to Pro I/O Banks

4 mA –0.3 0.7 1.7 3.6 0.7 1.7 4 4 18 16 10 10

8 mA –0.3 0.7 1.7 3.6 0.7 1.7 8 8 37 32 10 10

12 mA –0.3 0.7 1.7 3.6 0.7 1.7 12 12 74 65 10 10

16 mA –0.3 0.7 1.7 3.6 0.7 1.7 16 16 87 83 10 10

24 mA –0.3 0.7 1.7 3.6 0.7 1.7 24 24 124 169 10 10

Applicable to Advanced I/O Banks

2 mA –0.3 0.7 1.7 2.7 0.7 1.7 2 2 18 16 10 10

4 mA –0.3 0.7 1.7 2.7 0.7 1.7 4 4 18 16 10 10

6 mA –0.3 0.7 1.7 2.7 0.7 1.7 6 6 37 32 10 10

8 mA –0.3 0.7 1.7 2.7 0.7 1.7 8 8 37 32 10 10

12 mA –0.3 0.7 1.7 2.7 0.7 1.7 12 12 74 65 10 10

16 mA –0.3 0.7 1.7 2.7 0.7 1.7 16 16 87 83 10 10

24 mA –0.3 0.7 1.7 2.7 0.7 1.7 24 24 124 169 10 10

Applicable to Standard I/O Banks

2 mA –0.3 0.7 1.7 3.6 0.7 1.7 2 2 18 16 10 10

4 mA –0.3 0.7 1.7 3.6 0.7 1.7 4 4 18 16 10 10

6 mA –0.3 0.7 1.7 3.6 0.7 1.7 6 6 37 32 10 10

8 mA –0.3 0.7 1.7 3.6 0.7 1.7 8 8 37 32 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges.

3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.

4. Currents are measured at 85°C junction temperature.

5. Software default selection highlighted in gray.

Figure 2-120 • AC Loading

Table 2-111 • AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) CLOAD (pF)

02.51.2–35

Note: *Measuring point = Vtrip. See Table 2-90 on page 2-166 for a complete table of trip points.

Test Point

Enable Path

Data Path 35 pF

R = 1 k R to VCCI for t

/ t

ZLS

R to GND for t

/ t

ZHS

35 pF for t

/ t

ZHS

/ t

ZLS

35 pF for t

/ t

Fusion Family of Mixed Signal FPGAs

Revision 8 2-182

Timing Characteristics

Table 2-112 • 2.5 V LVCMOS Low Slew

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 2.3 V

Applicable to Pro I/Os

Drive

Strength

Speed

Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS

Units

4 mA Std. 0.60 12.00 0.04 1.51 1.66 0.43 12.23 11.61 2.72 2.20 14.46 13.85 ns

–1 0.51 10.21 0.04 1.29 1.41 0.36 10.40 9.88 2.31 1.87 12.30 11.78 ns

–2 0.45 8.96 0.03 1.13 1.24 0.32 9.13 8.67 2.03 1.64 10.80 10.34 ns

8 mA Std. 0.60 8.73 0.04 1.51 1.66 0.43 8.89 8.01 3.10 2.93 11.13 10.25 ns

–1 0.51 7.43 0.04 1.29 1.41 0.36 7.57 6.82 2.64 2.49 9.47 8.72 ns

–2 0.45 6.52 0.03 1.13 1.24 0.32 6.64 5.98 2.32 2.19 8.31 7.65 ns

12 mA Std. 0.66 6.77 0.04 1.51 1.66 0.43 6.90 6.11 3.37 3.39 9.14 8.34 ns

–1 0.56 5.76 0.04 1.29 1.41 0.36 5.87 5.20 2.86 2.89 7.77 7.10 ns

–2 0.49 5.06 0.03 1.13 1.24 0.32 5.15 4.56 2.51 2.53 6.82 6.23 ns

16 mA Std. 0.66 6.31 0.04 1.51 1.66 0.43 6.42 5.73 3.42 3.52 8.66 7.96 ns

–1 0.56 5.37 0.04 1.29 1.41 0.36 5.46 4.87 2.91 3.00 7.37 6.77 ns

–2 0.49 4.71 0.03 1.13 1.24 0.32 4.80 4.28 2.56 2.63 6.47 5.95 ns

24 mA Std. 0.66 5.93 0.04 1.51 1.66 0.43 6.04 5.70 3.49 4.00 8.28 7.94 ns

–1 0.56 5.05 0.04 1.29 1.41 0.36 5.14 4.85 2.97 3.40 7.04 6.75 ns

–2 0.49 4.43 0.03 1.13 1.24 0.32 4.51 4.26 2.61 2.99 6.18 5.93 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Device Architecture

2-183 Revision 8

Table 2-113 • 2.5 V LVCMOS High Slew

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 2.3 V

Applicable to Pro I/Os

Drive

Strength

Speed

Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS

Units

4 mA Std. 0.60 8.82 0.04 1.51 1.66 0.43 8.13 8.82 2.72 2.29 10.37 11.05 ns

–1 0.51 7.50 0.04 1.29 1.41 0.36 6.92 7.50 2.31 1.95 8.82 9.40 ns

–2 0.45 6.58 0.03 1.13 1.24 0.32 6.07 6.58 2.03 1.71 7.74 8.25 ns

8 mA Std. 0.60 5.27 0.04 1.51 1.66 0.43 5.27 5.27 3.10 3.03 7.50 7.51 ns

–1 0.51 4.48 0.04 1.29 1.41 0.36 4.48 4.48 2.64 2.58 6.38 6.38 ns

–2 0.45 3.94 0.03 1.13 1.24 0.32 3.93 3.94 2.32 2.26 5.60 5.61 ns

12 mA Std. 0.66 3.74 0.04 1.51 1.66 0.43 3.81 3.49 3.37 3.49 6.05 5.73 ns

–1 0.56 3.18 0.04 1.29 1.41 0.36 3.24 2.97 2.86 2.97 5.15 4.87 ns

–2 0.49 2.80 0.03 1.13 1.24 0.32 2.85 2.61 2.51 2.61 4.52 4.28 ns

16 mA Std. 0.66 3.53 0.04 1.51 1.66 0.43 3.59 3.12 3.42 3.62 5.83 5.35 ns

–1 0.56 3.00 0.04 1.29 1.41 0.36 3.06 2.65 2.91 3.08 4.96 4.55 ns

–2 0.49 2.63 0.03 1.13 1.24 0.32 2.68 2.33 2.56 2.71 4.35 4.00 ns

24 mA Std. 0.66 3.26 0.04 1.51 1.66 0.43 3.32 2.48 3.49 4.11 5.56 4.72 ns

–1 0.56 2.77 0.04 1.29 1.41 0.36 2.83 2.11 2.97 3.49 4.73 4.01 ns

–2 0.49 2.44 0.03 1.13 1.24 0.32 2.48 1.85 2.61 3.07 4.15 3.52 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-184

Table 2-114 • 2.5 V LVCMOS Low Slew

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 2.3 V

Applicable to Advanced I/Os

Drive

Strength

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

4 mA Std. 0.66 11.40 0.04 1.31 0.43 11.22 11.40 2.68 2.20 13.45 13.63 ns

–1 0.56 9.69 0.04 1.11 0.36 9.54 9.69 2.28 1.88 11.44 11.60 ns

–2 0.49 8.51 0.03 0.98 0.32 8.38 8.51 2.00 1.65 10.05 10.18 ns

8 mA Std. 0.66 7.96 0.04 1.31 0.43 8.11 7.81 3.05 2.89 10.34 10.05 ns

–1 0.56 6.77 0.04 1.11 0.36 6.90 6.65 2.59 2.46 8.80 8.55 ns

–2 0.49 5.94 0.03 0.98 0.32 6.05 5.84 2.28 2.16 7.72 7.50 ns

12 mA Std. 0.66 6.18 0.04 1.31 0.43 6.29 5.92 3.30 3.32 8.53 8.15 ns

–1 0.56 5.26 0.04 1.11 0.36 5.35 5.03 2.81 2.83 7.26 6.94 ns

–2 0.49 4.61 0.03 0.98 0.32 4.70 4.42 2.47 2.48 6.37 6.09 ns

16 mA Std. 0.66 6.18 0.04 1.31 0.43 6.29 5.92 3.30 3.32 8.53 8.15 ns

–1 0.56 5.26 0.04 1.11 0.36 5.35 5.03 2.81 2.83 7.26 6.94 ns

–2 0.49 4.61 0.03 0.98 0.32 4.70 4.42 2.47 2.48 6.37 6.09 ns

24 mA Std. 0.66 6.18 0.04 1.31 0.43 6.29 5.92 3.30 3.32 8.53 8.15 ns

–1 0.56 5.26 0.04 1.11 0.36 5.35 5.03 2.81 2.83 7.26 6.94 ns

–2 0.49 4.61 0.03 0.98 0.32 4.70 4.42 2.47 2.48 6.37 6.09 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Device Architecture

2-185 Revision 8

Table 2-115 • 2.5 V LVCMOS High Slew

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 2.3 V

Applicable to Advanced I/Os

Drive

Strength

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

4 mA Std. 0.66 8.66 0.04 1.31 0.43 7.83 8.66 2.68 2.30 10.07 10.90 ns

–1 0.56 7.37 0.04 1.11 0.36 6.66 7.37 2.28 1.96 8.56 9.27 ns

–2 0.49 6.47 0.03 0.98 0.32 5.85 6.47 2.00 1.72 7.52 8.14 ns

8 mA Std. 0.66 5.17 0.04 1.31 0.43 5.04 5.17 3.05 3.00 7.27 7.40 ns

–1 0.56 4.39 0.04 1.11 0.36 4.28 4.39 2.59 2.55 6.19 6.30 ns

–2 0.49 3.86 0.03 0.98 0.32 3.76 3.86 2.28 2.24 5.43 5.53 ns

12 mA Std. 0.66 3.56 0.04 1.31 0.43 3.63 3.43 3.30 3.44 5.86 5.67 ns

–1 0.56 3.03 0.04 1.11 0.36 3.08 2.92 2.81 2.92 4.99 4.82 ns

–2 0.49 2.66 0.03 0.98 0.32 2.71 2.56 2.47 2.57 4.38 4.23 ns

16 mA Std. 0.66 3.35 0.04 1.31 0.43 3.41 3.06 3.36 3.55 5.65 5.30 ns

–1 0.56 2.85 0.04 1.11 0.36 2.90 2.60 2.86 3.02 4.81 4.51 ns

–2 0.49 2.50 0.03 0.98 0.32 2.55 2.29 2.51 2.65 4.22 3.96 ns

24 mA Std. 0.66 3.56 0.04 1.31 0.43 3.63 3.43 3.30 3.44 5.86 5.67 ns

–1 0.56 3.03 0.04 1.11 0.36 3.08 2.92 2.81 2.92 4.99 4.82 ns

–2 0.49 2.66 0.03 0.98 0.32 2.71 2.56 2.47 2.57 4.38 4.23 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Tab le 3- 7 on

page 3-9.

Table 2-116 • 2.5 V LVCMOS Low Slew

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 2.3 V

Applicable to Standard I/Os

Drive

Strength

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

2 mA Std. 0.66 11.00 0.04 1.29 0.43 10.37 11.00 2.03 1.83 ns

–1 0.56 9.35 0.04 1.10 0.36 8.83 9.35 1.73 1.56 ns

–2 0.49 8.21 0.03 0.96 0.32 7.75 8.21 1.52 1.37 ns

4 mA Std. 0.66 11.00 0.04 1.29 0.43 10.37 11.00 2.03 1.83 ns

–1 0.56 9.35 0.04 1.10 0.36 8.83 9.35 1.73 1.56 ns

–2 0.49 8.21 0.03 0.96 0.32 7.75 8.21 1.52 1.37 ns

6 mA Std. 0.66 7.50 0.04 1.29 0.43 7.36 7.50 2.39 2.46 ns

–1 0.56 6.38 0.04 1.10 0.36 6.26 6.38 2.03 2.10 ns

–2 0.49 5.60 0.03 0.96 0.32 5.49 5.60 1.78 1.84 ns

8 mA Std. 0.66 7.50 0.04 1.29 0.43 7.36 7.50 2.39 2.46 ns

–1 0.56 6.38 0.04 1.10 0.36 6.26 6.38 2.03 2.10 ns

–2 0.49 5.60 0.03 0.96 0.32 5.49 5.60 1.78 1.84 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-186

Table 2-117 • 2.5 V LVCMOS High Slew

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 2.3 V

Applicable to Standard I/Os

Drive

Strength

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

2 mA Std. 0.66 8.20 0.04 1.29 0.43 7.24 8.20 2.03 1.91 ns

–1 0.56 6.98 0.04 1.10 0.36 6.16 6.98 1.73 1.62 ns

–2 0.49 6.13 0.03 0.96 0.32 5.41 6.13 1.52 1.43 ns

4 mA Std. 0.66 8.20 0.04 1.29 0.43 7.24 8.20 2.03 1.91 ns

–1 0.56 6.98 0.04 1.10 0.36 6.16 6.98 1.73 1.62 ns

–2 0.49 6.13 0.03 0.96 0.32 5.41 6.13 1.52 1.43 ns

6 mA Std. 0.66 4.77 0.04 1.29 0.43 4.55 4.77 2.38 2.55 ns

–1 0.56 4.05 0.04 1.10 0.36 3.87 4.05 2.03 2.17 ns

–2 0.49 3.56 0.03 0.96 0.32 3.40 3.56 1.78 1.91 ns

8 mA Std. 0.66 4.77 0.04 1.29 0.43 4.55 4.77 2.38 2.55 ns

–1 0.56 4.05 0.04 1.10 0.36 3.87 4.05 2.03 2.17 ns

–2 0.49 3.56 0.03 0.96 0.32 3.40 3.56 1.78 1.91 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Device Architecture

2-187 Revision 8

1.8 V LVCMOS

Low-Voltage CMOS for 1.8 V is an extension of the LVCMOS standard (JESD8-5) used for general-

purpose 1.8 V applications. It uses a 1.8 V input buffer and push-pull output buffer.

Table 2-118 • Minimum and Maximum DC Input and Output Levels

1.8 V

LVCMOS VIL VIH VOL VOH IOL IOH IOSL IOSH IIL1IIH2

Drive

Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

Applicable to Pro I/O Banks

2 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.45 VCCI – 0.45 2 2 11 9 10 10

4 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.45 VCCI – 0.45 4 4 22 17 10 10

6 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.45 VCCI – 0.45 6 6 44 35 10 10

8 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.45 VCCI – 0.45 8 8 51 45 10 10

12 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.45 VCCI – 0.45 12 12 74 91 10 10

16 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.45 VCCI – 0.45 16 16 74 91 10 10

Applicable to Advanced I/O Banks

2 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.9 0.45 VCCI – 0.45 2 2 11 9 10 10

4 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.9 0.45 VCCI – 0.45 4 4 22 17 10 10

6 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.9 0.45 VCCI – 0.45 6 6 44 35 10 10

8 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.9 0.45 VCCI – 0.45 8 8 51 45 10 10

12 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.9 0.45 VCCI – 0.45 12 12 74 91 10 10

16 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.9 0.45 VCCI – 0.45 16 16 74 91 10 10

Applicable to Standard I/O Banks

2 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.45 VCCI – 0.45 2 2 11 9 10 10

4 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.45 VCCI – 0.45 4 4 22 17 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges.

3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.

4. Currents are measured at 85°C junction temperature.

5. Software default selection highlighted in gray.

Figure 2-121 • AC Loading

Table 2-119 • AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V) Input Low (V) Measuring Point* (V) VREF (typ.) (V) CLOAD (pF)

01.80.9–35

Note: *Measuring point = Vtrip. See Table 2-90 on page 2-166 for a complete table of trip points.

Test Point

Enable Path

Data Path 35 pF

R = 1 k R to VCCI for t

/ t

ZLS

R to GND for t

/ t

ZHS

35 pF for t

/ t

ZHS

/ t

ZLS

35 pF for t

/ t

Fusion Family of Mixed Signal FPGAs

Revision 8 2-188

Timing Characteristics

Table 2-120 • 1.8 V LVCMOS Low Slew

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 1.7 V

Applicable to Pro I/Os

Drive

Strength

Speed

Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS

Units

2 mA Std. 0.66 15.84 0.04 1.45 1.91 0.43 15.65 15.84 2.78 1.58 17.89 18.07 ns

–1 0.56 13.47 0.04 1.23 1.62 0.36 13.31 13.47 2.37 1.35 15.22 15.37 ns

–2 0.49 11.83 0.03 1.08 1.42 0.32 11.69 11.83 2.08 1.18 13.36 13.50 ns

4 mA Std. 0.66 11.39 0.04 1.45 1.91 0.43 11.60 10.76 3.26 2.77 13.84 12.99 ns

–1 0.56 9.69 0.04 1.23 1.62 0.36 9.87 9.15 2.77 2.36 11.77 11.05 ns

–2 0.49 8.51 0.03 1.08 1.42 0.32 8.66 8.03 2.43 2.07 10.33 9.70 ns

8 mA Std. 0.66 8.97 0.04 1.45 1.91 0.43 9.14 8.10 3.57 3.36 11.37 10.33 ns

–1 0.56 7.63 0.04 1.23 1.62 0.36 7.77 6.89 3.04 2.86 9.67 8.79 ns

–2 0.49 6.70 0.03 1.08 1.42 0.32 6.82 6.05 2.66 2.51 8.49 7.72 ns

12 mA Std. 0.66 8.35 0.04 1.45 1.91 0.43 8.50 7.59 3.64 3.52 10.74 9.82 ns

–1 0.56 7.10 0.04 1.23 1.62 0.36 7.23 6.45 3.10 3.00 9.14 8.35 ns

–2 0.49 6.24 0.03 1.08 1.42 0.32 6.35 5.66 2.72 2.63 8.02 7.33 ns

16 mA Std. 0.66 7.94 0.04 1.45 1.91 0.43 8.09 7.56 3.74 4.11 10.32 9.80 ns

–1 0.56 6.75 0.04 1.23 1.62 0.36 6.88 6.43 3.18 3.49 8.78 8.33 ns

–2 0.49 5.93 0.03 1.08 1.42 0.32 6.04 5.65 2.79 3.07 7.71 7.32 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Device Architecture

2-189 Revision 8

Table 2-121 • 1.8 V LVCMOS High Slew

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 1.7 V

Applicable to Pro I/Os

Drive

Strength

Speed

Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS

Units

2 mA Std. 0.66 12.10 0.04 1.45 1.91 0.43 9.59 12.10 2.78 1.64 11.83 14.34 ns

–1 0.56 10.30 0.04 1.23 1.62 0.36 8.16 10.30 2.37 1.39 10.06 12.20 ns

–2 0.49 9.04 0.03 1.08 1.42 0.32 7.16 9.04 2.08 1.22 8.83 10.71 ns

4 mA Std. 0.66 7.05 0.04 1.45 1.91 0.43 6.20 7.05 3.25 2.86 8.44 9.29 ns

–1 0.56 6.00 0.04 1.23 1.62 0.36 5.28 6.00 2.76 2.44 7.18 7.90 ns

–2 0.49 5.27 0.03 1.08 1.42 0.32 4.63 5.27 2.43 2.14 6.30 6.94 ns

8 mA Std. 0.66 4.52 0.04 1.45 1.91 0.43 4.47 4.52 3.57 3.47 6.70 6.76 ns

–1 0.56 3.85 0.04 1.23 1.62 0.36 3.80 3.85 3.04 2.95 5.70 5.75 ns

–2 0.49 3.38 0.03 1.08 1.42 0.32 3.33 3.38 2.66 2.59 5.00 5.05 ns

12 mA Std. 0.66 4.12 0.04 1.45 1.91 0.43 4.20 3.99 3.63 3.62 6.43 6.23 ns

–1 0.56 3.51 0.04 1.23 1.62 0.36 3.57 3.40 3.09 3.08 5.47 5.30 ns

–2 0.49 3.08 0.03 1.08 1.42 0.32 3.14 2.98 2.71 2.71 4.81 4.65 ns

16 mA Std. 0.66 3.80 0.04 1.45 1.91 0.43 3.87 3.09 3.73 4.24 6.10 5.32 ns

–1 0.56 3.23 0.04 1.23 1.62 0.36 3.29 2.63 3.18 3.60 5.19 4.53 ns

–2 0.49 2.83 0.03 1.08 1.42 0.32 2.89 2.31 2.79 3.16 4.56 3.98 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-190

Table 2-122 • 1.8 V LVCMOS Low Slew

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 1.7 V

Applicable to Advanced I/Os

Drive

Strength

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 0.66 15.53 0.04 1.31 0.43 14.11 15.53 2.78 1.60 16.35 17.77 ns

–1 0.56 13.21 0.04 1.11 0.36 12.01 13.21 2.36 1.36 13.91 15.11 ns

–22 0.49 11.60 0.03 0.98 0.32 10.54 11.60 2.07 1.19 12.21 13.27 ns

4 mA Std. 0.66 10.48 0.04 1.31 0.43 10.41 10.48 3.23 2.73 12.65 12.71 ns

–1 0.56 8.91 0.04 1.11 0.36 8.86 8.91 2.75 2.33 10.76 10.81 ns

–2 0.49 7.82 0.03 0.98 0.32 7.77 7.82 2.41 2.04 9.44 9.49 ns

8 mA Std. 0.66 8.05 0.04 1.31 0.43 8.20 7.84 3.54 3.27 10.43 10.08 ns

–1 0.56 6.85 0.04 1.11 0.36 6.97 6.67 3.01 2.78 8.88 8.57 ns

–2 0.49 6.01 0.03 0.98 0.32 6.12 5.86 2.64 2.44 7.79 7.53 ns

12 mA Std. 0.66 7.50 0.04 1.31 0.43 7.64 7.30 3.61 3.41 9.88 9.53 ns

–1 0.56 6.38 0.04 1.11 0.36 6.50 6.21 3.07 2.90 8.40 8.11 ns

–2 0.49 5.60 0.03 0.98 0.32 5.71 5.45 2.69 2.55 7.38 7.12 ns

16 mA Std. 0.66 7.29 0.04 1.31 0.43 7.23 7.29 3.71 3.95 9.47 9.53 ns

–1 0.56 6.20 0.04 1.11 0.36 6.15 6.20 3.15 3.36 8.06 8.11 ns

–2 0.49 5.45 0.03 0.98 0.32 5.40 5.45 2.77 2.95 7.07 7.12 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Device Architecture

2-191 Revision 8

Table 2-123 • 1.8 V LVCMOS High Slew

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 1.7 V

Applicable to Advanced I/Os

Drive

Strength

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 0.66 11.86 0.04 1.22 0.43 9.14 11.86 2.77 1.66 11.37 14.10 ns

–1 0.56 10.09 0.04 1.04 0.36 7.77 10.09 2.36 1.41 9.67 11.99 ns

–2 0.49 8.86 0.03 0.91 0.32 6.82 8.86 2.07 1.24 8.49 10.53 ns

4 mA Std. 0.66 6.91 0.04 1.22 0.43 5.86 6.91 3.22 2.84 8.10 9.15 ns

–1 0.56 5.88 0.04 1.04 0.36 4.99 5.88 2.74 2.41 6.89 7.78 ns

–2 0.49 5.16 0.03 0.91 0.32 4.38 5.16 2.41 2.12 6.05 6.83 ns

8 mA Std. 0.66 4.45 0.04 1.22 0.43 4.18 4.45 3.53 3.38 6.42 6.68 ns

–1 0.56 3.78 0.04 1.04 0.36 3.56 3.78 3.00 2.88 5.46 5.69 ns

–2 0.49 3.32 0.03 0.91 0.32 3.12 3.32 2.64 2.53 4.79 4.99 ns

12 mA Std. 0.66 3.92 0.04 1.22 0.43 3.93 3.92 3.60 3.52 6.16 6.16 ns

–1 0.56 3.34 0.04 1.04 0.36 3.34 3.34 3.06 3.00 5.24 5.24 ns

–2 0.49 2.93 0.03 0.91 0.32 2.93 2.93 2.69 2.63 4.60 4.60 ns

16 mA Std. 0.66 3.53 0.04 1.22 0.43 3.60 3.04 3.70 4.08 5.84 5.28 ns

–1 0.56 3.01 0.04 1.04 0.36 3.06 2.59 3.15 3.47 4.96 4.49 ns

–2 0.49 2.64 0.03 0.91 0.32 2.69 2.27 2.76 3.05 4.36 3.94 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Tab le 3- 7 on

page 3-9.

Table 2-124 • 1.8 V LVCMOS Low Slew

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 1.7 V

Applicable to Standard I/Os

Drive

Strength

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

2 mA Std. 0.66 15.01 0.04 1.20 0.43 13.15 15.01 1.99 1.99 ns

–1 0.56 12.77 0.04 1.02 0.36 11.19 12.77 1.70 1.70 ns

–2 0.49 11.21 0.03 0.90 0.32 9.82 11.21 1.49 1.49 ns

4 mA Std. 0.66 10.10 0.04 1.20 0.43 9.55 10.10 2.41 2.37 ns

–1 0.56 8.59 0.04 1.02 0.36 8.13 8.59 2.05 2.02 ns

–2 0.49 7.54 0.03 0.90 0.32 7.13 7.54 1.80 1.77 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-192

Table 2-125 • 1.8 V LVCMOS High Slew

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 1.7 V

Applicable to Standard I/Os

Drive

Strength

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

2 mA Std. 0.66 11.21 0.04 1.20 0.43 8.53 11.21 1.99 1.21 ns

–1 0.56 9.54 0.04 1.02 0.36 7.26 9.54 1.69 1.03 ns

–2 0.49 8.37 0.03 0.90 0.32 6.37 8.37 1.49 0.90 ns

4 mA Std. 0.66 6.34 0.04 1.20 0.43 5.38 6.34 2.41 2.48 ns

–1 0.56 5.40 0.04 1.02 0.36 4.58 5.40 2.05 2.11 ns

–2 0.49 4.74 0.03 0.90 0.32 4.02 4.74 1.80 1.85 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Device Architecture

2-193 Revision 8

1.5 V LVCMOS (JESD8-11)

Low-Voltage CMOS for 1.5 V is an extension of the LVCMOS standard (JESD8-5) used for general-

purpose 1.5 V applications. It uses a 1.5 V input buffer and push-pull output buffer.

Table 2-126 • Minimum and Maximum DC Input and Output Levels

1.5 V

LVCMOS VIL VIH VOL VOH IOL IOH IOSL IOSH IIL1IIH2

Drive

Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

Applicable to Pro I/O Banks

2 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.25 * VCCI 0.75 * VCCI 2 2 16 13 10 10

4 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.25 * VCCI 0.75 * VCCI 4 4 33 25 10 10

6 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.25 * VCCI 0.75 * VCCI 6 6 39 32 10 10

8 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.25 * VCCI 0.75 * VCCI 8 8 55 66 10 10

12 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.25 * VCCI 0.75 * VCCI 12 12 55 66 10 10

Applicable to Advanced I/O Banks

2 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.575 0.25 * VCCI 0.75 * VCCI 2 2 16 13 10 10

4 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.575 0.25 * VCCI 0.75 * VCCI 4 4 33 25 10 10

6 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.575 0.25 * VCCI 0.75 * VCCI 6 6 39 32 10 10

8 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.575 0.25 * VCCI 0.75 * VCCI 8 8 55 66 10 10

12 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.575 0.25 * VCCI 0.75 * VCCI 12 12 55 66 10 10

Applicable to Pro I/O Banks

2 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.25 * VCCI 0.75 * VCCI 2 2 16 13 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges.

3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.

4. Currents are measured at 85°C junction temperature.

5. Software default selection highlighted in gray.

Figure 2-122 • AC Loading

Table 2-127 • AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) CLOAD (pF)

0 1.5 0.75 – 35

Note: *Measuring point = Vtrip. See Table 2-90 on page 2-166 for a complete table of trip points.

Test Point

Enable Path

Data Path 35 pF

R = 1 k R to VCCI for tLZ / tZL / tZLS

R to GND for tHZ / tZH / tZHS

35 pF for tZH / tZHS / tZL / tZLS

35 pF for tHZ / tLZ

Fusion Family of Mixed Signal FPGAs

Revision 8 2-194

Timing Characteristics

Table 2-128 • 1.5 V LVCMOS Low Slew

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 1.4 V

Applicable to Pro I/Os

Drive

Strength

Speed

Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 0.66 14.11 0.04 1.70 2.14 0.43 14.37 13.14 3.40 2.68 16.61 15.37 ns

–1 0.56 12.00 0.04 1.44 1.82 0.36 12.22 11.17 2.90 2.28 14.13 13.08 ns

–2 0.49 10.54 0.03 1.27 1.60 0.32 10.73 9.81 2.54 2.00 12.40 11.48 ns

4 mA Std. 0.66 11.23 0.04 1.70 2.14 0.43 11.44 9.87 3.77 3.36 13.68 12.10 ns

–1 0.56 9.55 0.04 1.44 1.82 0.36 9.73 8.39 3.21 2.86 11.63 10.29 ns

–2 0.49 8.39 0.03 1.27 1.60 0.32 8.54 7.37 2.81 2.51 10.21 9.04 ns

8 mA Std. 0.66 10.45 0.04 1.70 2.14 0.43 10.65 9.24 3.84 3.55 12.88 11.48 ns

–1 0.56 8.89 0.04 1.44 1.82 0.36 9.06 7.86 3.27 3.02 10.96 9.76 ns

–2 0.49 7.81 0.03 1.27 1.60 0.32 7.95 6.90 2.87 2.65 9.62 8.57 ns

12 mA Std. 0.66 10.02 0.04 1.70 2.14 0.43 10.20 9.23 3.97 4.22 12.44 11.47 ns

–1 0.56 8.52 0.04 1.44 1.82 0.36 8.68 7.85 3.38 3.59 10.58 9.75 ns

–2 0.49 7.48 0.03 1.27 1.60 0.32 7.62 6.89 2.97 3.15 9.29 8.56 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9.

Table 2-129 • 1.5 V LVCMOS High Slew

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 1.4 V

Applicable to Pro I/Os

Drive

Strength

Speed

Grade tDOUT tDP tDIN tPY tPYS

tEOU

TtZL tZH tLZ tHZ tZLS tZHS

Units

2 mA Std. 0.66 8.53 0.04 1.70 2.14 0.43 7.26 8.53 3.39 2.79 9.50 10.77 ns

–1 0.56 7.26 0.04 1.44 1.82 0.36 6.18 7.26 2.89 2.37 8.08 9.16 ns

–2 0.49 6.37 0.03 1.27 1.60 0.32 5.42 6.37 2.53 2.08 7.09 8.04 ns

4 mA Std. 0.66 5.41 0.04 1.70 2.14 0.43 5.22 5.41 3.75 3.48 7.45 7.65 ns

–1 0.56 4.60 0.04 1.44 1.82 0.36 4.44 4.60 3.19 2.96 6.34 6.50 ns

–2 0.49 4.04 0.03 1.27 1.60 0.32 3.89 4.04 2.80 2.60 5.56 5.71 ns

8 mA Std. 0.66 4.80 0.04 1.70 2.14 0.43 4.89 4.75 3.83 3.67 7.13 6.98 ns

–1 0.56 4.09 0.04 1.44 1.82 0.36 4.16 4.04 3.26 3.12 6.06 5.94 ns

–2 0.49 3.59 0.03 1.27 1.60 0.32 3.65 3.54 2.86 2.74 5.32 5.21 ns

12 mA Std. 0.66 4.42 0.04 1.70 2.14 0.43 4.50 3.62 3.96 4.37 6.74 5.86 ns

–1 0.56 3.76 0.04 1.44 1.82 0.36 3.83 3.08 3.37 3.72 5.73 4.98 ns

–2 0.49 3.30 0.03 1.27 1.60 0.32 3.36 2.70 2.96 3.27 5.03 4.37 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Device Architecture

2-195 Revision 8

Table 2-130 • 1.5 V LVCMOS Low Slew

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 1.4 V

Applicable to Advanced I/Os

Drive

Strength

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 0.66 12.78 0.04 1.31 0.43 12.81 12.78 3.40 2.64 15.05 15.02 ns

–1 0.56 10.87 0.04 1.11 0.36 10.90 10.87 2.89 2.25 12.80 12.78 ns

–2 0.49 9.55 0.03 0.98 0.32 9.57 9.55 2.54 1.97 11.24 11.22 ns

4 mA Std. 0.66 10.01 0.04 1.31 0.43 10.19 9.55 3.75 3.27 12.43 11.78 ns

–1 0.56 8.51 0.04 1.11 0.36 8.67 8.12 3.19 2.78 10.57 10.02 ns

–2 0.49 7.47 0.03 0.98 0.32 7.61 7.13 2.80 2.44 9.28 8.80 ns

8 mA Std. 0.66 9.33 0.04 1.31 0.43 9.51 8.89 3.83 3.43 11.74 11.13 ns

–1 0.56 7.94 0.04 1.11 0.36 8.09 7.56 3.26 2.92 9.99 9.47 ns

–2 0.49 6.97 0.03 0.98 0.32 7.10 6.64 2.86 2.56 8.77 8.31 ns

12 mA Std. 0.66 8.91 0.04 1.31 0.43 9.07 8.89 3.95 4.05 11.31 11.13 ns

–1 0.56 7.58 0.04 1.11 0.36 7.72 7.57 3.36 3.44 9.62 9.47 ns

–2 0.49 6.65 0.03 0.98 0.32 6.78 6.64 2.95 3.02 8.45 8.31 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Tab le 3-7 on

page 3-9.

Table 2-131 • 1.5 V LVCMOS High Slew

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 1.4 V

Applicable to Advanced I/Os

Drive

Strength

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 0.66 8.36 0.04 1.44 0.43 6.82 8.36 3.39 2.77 9.06 10.60 ns

–1 0.56 7.11 0.04 1.22 0.36 5.80 7.11 2.88 2.35 7.71 9.02 ns

–2 0.49 6.24 0.03 1.07 0.32 5.10 6.24 2.53 2.06 6.76 7.91 ns

4 mA Std. 0.66 5.31 0.04 1.44 0.43 4.85 5.31 3.74 3.40 7.09 7.55 ns

–1 0.56 4.52 0.04 1.22 0.36 4.13 4.52 3.18 2.89 6.03 6.42 ns

–2 0.49 3.97 0.03 1.07 0.32 3.62 3.97 2.79 2.54 5.29 5.64 ns

8 mA Std. 0.66 4.67 0.04 1.44 0.43 4.55 4.67 3.82 3.56 6.78 6.90 ns

–1 0.56 3.97 0.04 1.22 0.36 3.87 3.97 3.25 3.03 5.77 5.87 ns

–2 0.49 3.49 0.03 1.07 0.32 3.40 3.49 2.85 2.66 5.07 5.16 ns

12 mA Std. 0.66 4.08 0.04 1.44 0.43 4.15 3.58 3.94 4.20 6.39 5.81 ns

–1 0.56 3.47 0.04 1.22 0.36 3.53 3.04 3.36 3.58 5.44 4.95 ns

–2 0.49 3.05 0.03 1.07 0.32 3.10 2.67 2.95 3.14 4.77 4.34 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Tab le 3- 7 on

page 3-9.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-196

Table 2-132 • 1.5 V LVCMOS Low Slew

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 1.4 V

Applicable to Standard I/Os

Drive

Strength

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

2 mA Std. 0.66 12.33 0.04 1.42 0.43 11.79 12.33 2.45 2.32 ns

–1 0.56 10.49 0.04 1.21 0.36 10.03 10.49 2.08 1.98 ns

–2 0.49 9.21 0.03 1.06 0.32 8.81 9.21 1.83 1.73 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Table 2-133 • 1.5 V LVCMOS High Slew

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 1.4 V

Applicable to Standard I/Os

Drive

Strength

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

2 mA Std. 0.66 7.65 0.04 1.42 0.43 6.31 7.65 2.45 2.45 ns

–1 0.56 6.50 0.04 1.21 0.36 5.37 6.50 2.08 2.08 ns

–2 0.49 5.71 0.03 1.06 0.32 4.71 5.71 1.83 1.83 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Tabl e 3-7 on

page 3-9.

Device Architecture

2-197 Revision 8

3.3 V PCI, 3.3 V PCI-X

The Peripheral Component Interface for 3.3 V standard specifies support for 33 MHz and 66 MHz PCI

Bus applications.

AC loadings are defined per the PCI/PCI-X specifications for the datapath; Microsemi loadings for enable

path characterization are described in Figure 2-123.

AC loadings are defined per PCI/PCI-X specifications for the data path; Microsemi loading for tristate is

described in Table 2-135.

Table 2-134 • Minimum and Maximum DC Input and Output Levels

3.3 V PCI/PCI-X VIL VIH VOL VOH IOL IOH IOSL IOSH IIL1IIH2

Drive Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

Per PCI

specification

Per PCI curves 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges.

3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.

4. Currents are measured at 85°C junction temperature.

Figure 2-123 • AC Loading

Test Point

Enable Path

R = 1 k

Test Point

Data Path

R = 25 R to VCCI for tDP (F)

R to GND for tDP (R) R to VCCI for tLZ / tZL / tZLS

R to GND for tHZ / tZH / tZHS

10 pF for tZH / tZHS / tZL / tZLS

10 pF for tHZ / tLZ

Table 2-135 • AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) CLOAD (pF)

0 3.3 0.285 * VCCI for tDP(R)

0.615 * VCCI for tDP(F)

–10

Note: *Measuring point = Vtrip. See Table 2-90 on page 2-166 for a complete table of trip points.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-198

Timing Characteristics

Table 2-136 • 3.3 V PCI/PCI-X

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 3.0 V

Applicable to Pro I/Os

Speed

Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

Std. 0.66 2.81 0.04 1.05 1.67 0.43 2.86 2.00 3.28 3.61 5.09 4.23 ns

–1 0.56 2.39 0.04 0.89 1.42 0.36 2.43 1.70 2.79 3.07 4.33 3.60 ns

–2 0.49 2.09 0.03 0.78 1.25 0.32 2.13 1.49 2.45 2.70 3.80 3.16 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Table 2-137 • 3.3 V PCI/PCI-X

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 3.0 V

Applicable to Advanced I/Os

Speed

Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

Std. 0.66 2.68 0.04 0.86 0.43 2.73 1.95 3.21 3.58 4.97 4.19 0.66 ns

–1 0.56 2.28 0.04 0.73 0.36 2.32 1.66 2.73 3.05 4.22 3.56 0.56 ns

–2 0.49 2.00 0.03 0.65 0.32 2.04 1.46 2.40 2.68 3.71 3.13 0.49 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Device Architecture

2-199 Revision 8

Voltage Referenced I/O Characteristics

3.3 V GTL

Gunning Transceiver Logic is a high-speed bus standard (JESD8-3). It provides a differential amplifier

input buffer and an open-drain output buffer. The VCCI pin should be connected to 3.3 V.

Timing Characteristics

Table 2-138 • Minimum and Maximum DC Input and Output Levels

3.3 V GTL VIL VIH VOL VOH IOL IOH IOSL IOSH IIL1IIH2

Drive

Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

20 mA3–0.3 VREF – 0.05 VREF + 0.05 3.6 0.4 – 20 20 181 268 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges.

3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.

4. Currents are measured at 85°C junction temperature.

Figure 2-124 • AC Loading

Table 2-139 • AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) VTT (typ.) (V) CLOAD (pF)

VREF – 0.05 VREF + 0.05 0.8 0.8 1.2 10

Note: *Measuring point = Vtrip. See Table 2-90 on page 2-166 for a complete table of trip points.

Test Point

10 pF

GTL

VTT

Table 2-140 • 3.3 V GTL

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 3.0 V, VREF = 0.8 V

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

Std. 0.66 2.08 0.04 2.93 0.43 2.04 2.08 4.27 4.31 ns

–1 0.56 1.77 0.04 2.50 0.36 1.73 1.77 3.63 3.67 ns

–2 0.49 1.55 0.03 2.19 0.32 1.52 1.55 3.19 3.22 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-200

2.5 V GTL

Gunning Transceiver Logic is a high-speed bus standard (JESD8-3). It provides a differential amplifier

input buffer and an open-drain output buffer. The VCCI pin should be connected to 2.5 V.

Timing Characteristics

Table 2-141 • Minimum and Maximum DC Input and Output Levels

2.5 GTL VIL VIH VOL VOH IOL IOH IOSL IOSH IIL1IIH2

Drive

Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

20 mA3–0.3 VREF – 0.05 VREF + 0.05 3.6 0.4 – 20 20 124 169 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges.

3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.

4. Currents are measured at 85°C junction temperature.

Figure 2-125 • AC Loading

Table 2-142 • AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) VTT (typ.) (V) CLOAD (pF)

VREF – 0.05 VREF + 0.05 0.8 0.8 1.2 10

Note: *Measuring point = Vtrip. See Table 2-90 on page 2-166 for a complete table of trip points.

Test Point

10 pF

GTL

VTT

Table 2-143 • 2.5 V GTL

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 3.0 V, VREF = 0.8 V

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

Std. 0.66 2.13 0.04 2.46 0.43 2.16 2.13 4.40 4.36 ns

–1 0.56 1.81 0.04 2.09 0.36 1.84 1.81 3.74 3.71 ns

–2 0.49 1.59 0.03 1.83 0.32 1.61 1.59 3.28 3.26 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Device Architecture

2-201 Revision 8

3.3 V GTL+

Gunning Transceiver Logic Plus is a high-speed bus standard (JESD8-3). It provides a differential

amplifier input buffer and an open-drain output buffer. The VCCI pin should be connected to 3.3 V.

Timing Characteristics

Table 2-144 • Minimum and Maximum DC Input and Output Levels

3.3 V GTL+ VIL VIH VOL VOH IOL IOH IOSL IOSH IIL1IIH2

Drive

Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

35 mA –0.3 VREF – 0.1 VREF + 0.1 3.6 0.6 – 35 35 181 268 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges.

3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.

4. Currents are measured at 85°C junction temperature.

Figure 2-126 • AC Loading

Table 2-145 • AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) VTT (typ.) (V) CLOAD (pF)

VREF – 0.1 VREF + 0.1 1.0 1.0 1.5 10

Note: *Measuring point = Vtrip. See Table 2-90 on page 2-166 for a complete table of trip points.

Test Point

10 pF

GTL+

VTT

Table 2-146 • 3.3 V GTL+

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 3.0 V, VREF = 1.0 V

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

Std. 0.66 2.06 0.04 1.59 0.43 2.09 2.06 4.33 4.29 ns

–1 0.56 1.75 0.04 1.35 0.36 1.78 1.75 3.68 3.65 ns

–2 0.49 1.53 0.03 1.19 0.32 1.56 1.53 3.23 3.20 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-202

2.5 V GTL+

Gunning Transceiver Logic Plus is a high-speed bus standard (JESD8-3). It provides a differential

amplifier input buffer and an open-drain output buffer. The VCCI pin should be connected to 2.5 V.

Timing Characteristics

Table 2-147 • Minimum and Maximum DC Input and Output Levels

2.5 V

GTL+ VIL VIH VOL VOH IOL IOH IOSL IOSH IIL1IIH2

Drive

Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

33 mA –0.3 VREF – 0.1 VREF + 0.1 3.6 0.6 – 33 33 124 169 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges.

3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.

4. Currents are measured at 85°C junction temperature.

Figure 2-127 • AC Loading

Table 2-148 • AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) VTT (typ.) (V) CLOAD (pF)

VREF – 0.1 VREF + 0.1 1.0 1.0 1.5 10

Note: *Measuring point = Vtrip. See Table 2-90 on page 2-166 for a complete table of trip points.

Test Point

10 pF

GTL+

VTT

Table 2-149 • 2.5 V GTL+

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 2.3 V, VREF = 1.0 V

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

Std. 0.66 2.21 0.04 1.51 0.43 2.25 2.10 4.48 4.34 ns

–1 0.56 1.88 0.04 1.29 0.36 1.91 1.79 3.81 3.69 ns

–2 0.49 1.65 0.03 1.13 0.32 1.68 1.57 3.35 4.34 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Device Architecture

2-203 Revision 8

HSTL Class I

High-Speed Transceiver Logic is a general-purpose high-speed 1.5 V bus standard (EIA/JESD8-6).

Fusion devices support Class I. This provides a differential amplifier input buffer and a push-pull output

buffer.

Timing Characteristics

Table 2-150 • Minimum and Maximum DC Input and Output Levels

HSTL

Class I VIL VIH VOL VOH IOL IOH IOSL IOSH IIL1IIH2

Drive

Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

8 mA –0.3 VREF – 0.1 VREF + 0.1 3.6 0.4 VCCI – 0.4 8 8 39 32 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges.

3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.

4. Currents are measured at 85°C junction temperature.

Figure 2-128 • AC Loading

Table 2-151 • AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) VTT (typ.) (V) CLOAD (pF)

VREF – 0.1 VREF + 0.1 0.75 0.75 0.75 20

Note: *Measuring point = Vtrip. See Table 2-90 on page 2-166 for a complete table of trip points.

est Point 20 p

HSTL

Class I

VTT

Table 2-152 • HSTL Class I

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 1.4 V, VREF = 0.75 V

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

Std. 0.66 3.18 0.04 2.12 0.43 3.24 3.14 5.47 5.38 ns

–1 0.56 2.70 0.04 1.81 0.36 2.75 2.67 4.66 4.58 ns

–2 0.49 2.37 0.03 1.59 0.32 2.42 2.35 4.09 4.02 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-204

HSTL Class II

High-Speed Transceiver Logic is a general-purpose high-speed 1.5 V bus standard (EIA/JESD8-6).

Fusion devices support Class II. This provides a differential amplifier input buffer and a push-pull output

buffer.

Timing Characteristics

Table 2-153 • Minimum and Maximum DC Input and Output Levels

HSTL Class II VIL VIH VOL VOH IOL IOH IOSL IOSH IIL1IIH2

Drive Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

15 mA3–0.3 VREF – 0.1 VREF + 0.1 3.6 0.4 VCCI – 0.4 15 15 55 66 10 10

Note:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges.

3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.

4. Currents are measured at 85°C junction temperature.

5. Output drive strength is below JEDEC specification.

Figure 2-129 • AC Loading

Table 2-154 • AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) VTT (typ.) (V) CLOAD (pF)

VREF – 0.1 VREF + 0.1 0.75 0.75 0.75 20

Note: *Measuring point = Vtrip. See Table 2-90 on page 2-166 for a complete table of trip points.

Test Point

20 pF

HSTL

Class II

VTT

Table 2-155 • HSTL Class II

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 1.4 V, VREF = 0.75 V

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

Std. 0.66 3.02 0.04 2.12 0.43 3.08 2.71 5.32 4.95 ns

–1 0.56 2.57 0.04 1.81 0.36 2.62 2.31 4.52 4.21 ns

–2 0.49 2.26 0.03 1.59 0.32 2.30 2.03 3.97 3.70 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Device Architecture

2-205 Revision 8

SSTL2 Class I

Stub-Speed Terminated Logic for 2.5 V memory bus standard (JESD8-9). Fusion devices support Class

I. This provides a differential amplifier input buffer and a push-pull output buffer.

Timing Characteristics

Table 2-156 • Minimum and Maximum DC Input and Output Levels

SSTL2 Class I VIL VIH VOL VOH IOL IOH IOSL IOSH IIL1IIH2

Drive

Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

15 mA –0.3 VREF – 0.2 VREF + 0.2 3.6 0.54 VCCI – 0.62 15 15 87 83 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges.

3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.

4. Currents are measured at 85°C junction temperature.

Figure 2-130 • AC Loading

Table 2-157 • AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) VTT (typ.) (V) CLOAD (pF)

VREF – 0.2 VREF + 0.2 1.25 1.25 1.25 30

Note: *Measuring point = Vtrip. See Table 2-90 on page 2-166 for a complete table of trip points.

Test Point

30 pF

SSTL2

Class I

VTT

Table 2-158 • SSTL 2 Class I

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 2.3 V, VREF = 1.25 V

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

Std. 0.66 2.13 0.04 1.33 0.43 2.17 1.85 4.40 4.08 ns

–1 0.56 1.81 0.04 1.14 0.36 1.84 1.57 3.74 3.47 ns

–2 0.49 1.59 0.03 1.00 0.32 1.62 1.38 3.29 3.05 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-206

SSTL2 Class II

Stub-Speed Terminated Logic for 2.5 V memory bus standard (JESD8-9). Fusion devices support Class

II. This provides a differential amplifier input buffer and a push-pull output buffer.

Timing Characteristics

Table 2-159 • Minimum and Maximum DC Input and Output Levels

SSTL2 Class II VIL VIH VOL VOH IOL IOH IOSL IOSH IIL1IIH2

Drive Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

18 mA –0.3 VREF – 0.2 VREF + 0.2 3.6 0.35 VCCI – 0.43 18 18 124 169 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges.

3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.

4. Currents are measured at 85°C junction temperature.

Figure 2-131 • AC Loading

Table 2-160 • AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) VTT (typ.) (V) CLOAD (pF)

VREF – 0.2 VREF + 0.2 1.25 1.25 1.25 30

Note: *Measuring point = Vtrip. See Table 2-90 on page 2-166 for a complete table of trip points.

Test Point

30 pF

SSTL2

Class II

VTT

Table 2-161 • SSTL 2 Class II

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 2.3 V, VREF = 1.25 V

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

Std. 0.66 2.17 0.04 1.33 0.43 2.21 1.77 4.44 4.01 ns

–1 0.56 1.84 0.04 1.14 0.36 1.88 1.51 3.78 3.41 ns

–2 0.49 1.62 0.03 1.00 0.32 1.65 1.32 3.32 2.99 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Device Architecture

2-207 Revision 8

SSTL3 Class I

Stub-Speed Terminated Logic for 3.3 V memory bus standard (JESD8-8). Fusion devices support Class

I. This provides a differential amplifier input buffer and a push-pull output buffer.

Timing Characteristics

Table 2-162 • Minimum and Maximum DC Input and Output Levels

SSTL3 Class I VIL VIH VOL VOH IOL IOH IOSL IOSH IIL1IIH2

Drive

Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

14 mA –0.3 VREF – 0.2 VREF + 0.2 3.6 0.7 VCCI – 1.1 14 14 54 51 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges.

3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.

4. Currents are measured at 85°C junction temperature.

Figure 2-132 • AC Loading

Table 2-163 • AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) VTT (typ.) (V) CLOAD (pF)

VREF – 0.2 VREF + 0.2 1.5 1.5 1.485 30

Note: *Measuring point = Vtrip. See Table 2-90 on page 2-166 for a complete table of trip points.

Test Point

30 pF

SSTL3

Class I

VTT

Table 2-164 • SSTL3 Class I

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 3.0 V, VREF = 1.5 V

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

Std. 0.66 2.31 0.04 1.25 0.43 2.35 1.84 4.59 4.07 ns

–1 0.56 1.96 0.04 1.06 0.36 2.00 1.56 3.90 3.46 ns

–2 0.49 1.72 0.03 0.93 0.32 1.75 1.37 3.42 3.04 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-208

SSTL3 Class II

Stub-Speed Terminated Logic for 3.3 V memory bus standard (JESD8-8). Fusion devices support Class

II. This provides a differential amplifier input buffer and a push-pull output buffer.

Timing Characteristics

Table 2-165 • Minimum and Maximum DC Input and Output Levels

SSTL3 Class II VIL VIH VOL VOH IOL IOH IOSL IOSH IIL1IIH2

Drive Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

21 mA –0.3 VREF – 0.2 VREF + 0.2 3.6 0.5 VCCI – 0.9 21 21 109 103 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges.

3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.

4. Currents are measured at 85°C junction temperature.

Figure 2-133 • AC Loading

Table 2-166 • AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) VTT (typ.) (V) CLOAD (pF)

VREF – 0.2 VREF + 0.2 1.5 1.5 1.485 30

Note: *Measuring point = Vtrip. See Table 2-90 on page 2-166 for a complete table of trip points.

Test Point

30 pF

SSTL3

Class II

VTT

Table 2-167 • SSTL3- Class II

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 3.0 V, VREF = 1.5 V

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

Std. 0.66 2.07 0.04 1.25 0.43 2.10 1.67 4.34 3.91 ns

–1 0.56 1.76 0.04 1.06 0.36 1.79 1.42 3.69 3.32 ns

–2 0.49 1.54 0.03 0.93 0.32 1.57 1.25 3.24 2.92 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Device Architecture

2-209 Revision 8

Differential I/O Characteristics

Configuration of the I/O modules as a differential pair is handled by the Microsemi Designer

software when the user instantiates a differential I/O macro in the design.

Differential I/Os can also be used in conjunction with the embedded Input Register (InReg), Output

support for bidirectional I/Os or tristates with these standards.

LVDS

Low-Voltage Differential Signal (ANSI/TIA/EIA-644) is a high-speed differential I/O standard. It requires

that one data bit be carried through two signal lines, so two pins are needed. It also requires external

resistor termination.

The full implementation of the LVDS transmitter and receiver is shown in an example in Figure 2-134.

The building blocks of the LVDS transmitter–receiver are one transmitter macro, one receiver macro,

three board resistors at the transmitter end, and one resistor at the receiver end. The values for the three

driver resistors are different from those used in the LVPECL implementation because the output standard

specifications are different.

Figure 2-134 • LVDS Circuit Diagram and Board-Level Implementation

Table 2-168 • Minimum and Maximum DC Input and Output Levels

DC Parameter Description Min. Typ. Max. Units

VCCI Supply Voltage 2.375 2.5 2.625 V

VOL Output Low Voltage 0.9 1.075 1.25 V

VOH Input High Voltage 1.25 1.425 1.6 V

IOL 1Output Low Voltage 0.65 0.91 1.16 mA

IOH 1Output High Voltage 0.65 0.91 1.16 mA

VI Input Voltage 0 2.925 V

IIL 2,3 Input Low Voltage 10 A

IIH 2,4 Input High Voltage 10 A

VODIFF Differential Output Voltage 250 350 450 mV

VOCM Output Common Mode Voltage 1.125 1.25 1.375 V

VICM Input Common Mode Voltage 0.05 1.25 2.35 V

VIDIFF Input Differential Voltage 100 350 mV

Notes:

1. IOL/IOH defined by VODIFF/(Resistor Network)

2. Currents are measured at 85°C junction temperature.

3. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

4. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges.

140 100 

ZO = 50 

165 

–

INBUF_LVDS

OUTBUF_LVDS

FPGA FPGA

Bourns Part Number: CAT16-LV4F12

Fusion Family of Mixed Signal FPGAs

Revision 8 2-210

Timing Characteristics

BLVDS/M-LVDS

Bus LVDS (BLVDS) and Multipoint LVDS (M-LVDS) specifications extend the existing LVDS standard to

high-performance multipoint bus applications. Multidrop and multipoint bus configurations can contain

any combination of drivers, receivers, and transceivers. Microsemi LVDS drivers provide the higher drive

current required by BLVDS and M-LVDS to accommodate the loading. The driver requires series

terminations for better signal quality and to control voltage swing. Termination is also required at both

ends of the bus, since the driver can be located anywhere on the bus. These configurations can be

implemented using TRIBUF_LVDS and BIBUF_LVDS macros along with appropriate terminations.

Multipoint designs using Microsemi LVDS macros can achieve up to 200 MHz with a maximum of 20

loads. A sample application is given in Figure 2-135. The input and output buffer delays are available in

the LVDS section in Table 2-171.

Example: For a bus consisting of 20 equidistant loads, the following terminations provide the required

differential voltage, in worst-case industrial operating conditions at the farthest receiver: RS=60 and

RT=70, given Z0=50 (2") and Zstub =50 (~1.5").

Table 2-169 • AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V)

1.075 1.325 Cross point –

Note: *Measuring point = Vtrip. See Table 2-90 on page 2-166 for a complete table of trip points.

Table 2-170 • LVDS

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 2.3 V

Applicable to Pro I/Os

Speed Grade tDOUT tDP tDIN tPY Units

Std. 0.66 2.10 0.04 1.82 ns

–1 0.56 1.79 0.04 1.55 ns

–2 0.49 1.57 0.03 1.36 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Figure 2-135 • BLVDS/M-LVDS Multipoint Application Using LVDS I/O Buffers

...

BIBUF_LVDS

EN EN EN EN EN

Receiver Transceiver Receiver TransceiverDriver

stub

Device Architecture

2-211 Revision 8

LVPECL

Low-Voltage Positive Emitter-Coupled Logic (LVPECL) is another differential I/O standard. It requires

that one data bit be carried through two signal lines. Like LVDS, two pins are needed. It also requires

external resistor termination.

The full implementation of the LVDS transmitter and receiver is shown in an example in Figure 2-136.

The building blocks of the LVPECL transmitter–receiver are one transmitter macro, one receiver macro,

three board resistors at the transmitter end, and one resistor at the receiver end. The values for the three

driver resistors are different from those used in the LVDS implementation because the output standard

specifications are different.

Timing Characteristics

Figure 2-136 • LVPECL Circuit Diagram and Board-Level Implementation

Table 2-171 • Minimum and Maximum DC Input and Output Levels

DC Parameter Description Min. Max. Min. Max. Min. Max. Units

VCCI Supply Voltage 3.0 3.3 3.6 V

VOL Output Low Voltage 0.96 1.27 1.06 1.43 1.30 1.57 V

VOH Output High Voltage 1.8 2.11 1.92 2.28 2.13 2.41 V

VIL, VIH Input Low, Input High Voltages 0 3.6 0 3.6 0 3.6 V

VODIFF Differential Output Voltage 0.625 0.97 0.625 0.97 0.625 0.97 V

VOCM Output Common Mode Voltage 1.762 1.98 1.762 1.98 1.762 1.98 V

VICM Input Common Mode Voltage 1.01 2.57 1.01 2.57 1.01 2.57 V

VIDIFF Input Differential Voltage 300 300 300 mV

Table 2-172 • AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V)

1.64 1.94 Cross point –

Note: *Measuring point = Vtrip. See Table 2-90 on page 2-166 for a complete table of trip points.

187 W 100 

ZO = 50 

100 

–

INBUF_LVPECL

OUTBUF_LVPECL

FPGA FPGA

Bourns Part Number: CAT16-PC4F12

Table 2-173 • LVPECL

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 3.0 V

Applicable to Pro I/Os

Speed Grade tDOUT tDP tDIN tPY Units

Std. 0.66 2.14 0.04 1.63 ns

–1 0.56 1.82 0.04 1.39 ns

–2 0.49 1.60 0.03 1.22 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-212

I/O Register Specifications

Fully Registered I/O Buffers with Synchronous Enable and Asynchronous Preset

Figure 2-137 • Timing Model of Registered I/O Buffers with Synchronous Enable and Asynchronous Preset

INBUF

INBUF INBUF

TRIBUF

CLKBUF

INBUF

CLKBUF

Data Input I/O Register with:

Active High Enable

Active High Preset

Positive Edge Triggered

Data Output Register and

Enable Output Register with:

Active High Enable

Active High Preset

Postive Edge Triggered

Pad Out

CLK

Enable

Preset

Data_out

Data

EOUT

DOUT

Enable

CLK

DFN1E1P1

PRE

DFN1E1P1

PRE

DFN1E1P1

PRE

D_Enable

YCore

Array

Device Architecture

2-213 Revision 8

Table 2-174 • Parameter Definitions and Measuring Nodes

Parameter

Name Parameter Definition

Measuring Nodes

(from, to)*

tOCLKQ Clock-to-Q of the Output Data Register H, DOUT

tOSUD Data Setup Time for the Output Data Register F, H

tOHD Data Hold Time for the Output Data Register F, H

tOSUE Enable Setup Time for the Output Data Register G, H

tOHE Enable Hold Time for the Output Data Register G, H

tOPRE2Q Asynchronous Preset-to-Q of the Output Data Register L,DOUT

tOREMPRE Asynchronous Preset Removal Time for the Output Data Register L, H

tORECPRE Asynchronous Preset Recovery Time for the Output Data Register L, H

tOECLKQ Clock-to-Q of the Output Enable Register H, EOUT

tOESUD Data Setup Time for the Output Enable Register J, H

tOEHD Data Hold Time for the Output Enable Register J, H

tOESUE Enable Setup Time for the Output Enable Register K, H

tOEHE Enable Hold Time for the Output Enable Register K, H

tOEPRE2Q Asynchronous Preset-to-Q of the Output Enable Register I, EOUT

tOEREMPRE Asynchronous Preset Removal Time for the Output Enable Register I, H

tOERECPRE Asynchronous Preset Recovery Time for the Output Enable Register I, H

tICLKQ Clock-to-Q of the Input Data Register A, E

tISUD Data Setup Time for the Input Data Register C, A

tIHD Data Hold Time for the Input Data Register C, A

tISUE Enable Setup Time for the Input Data Register B, A

tIHE Enable Hold Time for the Input Data Register B, A

tIPRE2Q Asynchronous Preset-to-Q of the Input Data Register D, E

tIREMPRE Asynchronous Preset Removal Time for the Input Data Register D, A

tIRECPRE Asynchronous Preset Recovery Time for the Input Data Register D, A

Note: *See Figure 2-137 on page 2-212 for more information.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-214

Fully Registered I/O Buffers with Synchronous Enable and Asynchronous Clear

Figure 2-138 • Timing Model of the Registered I/O Buffers with Synchronous Enable and Asynchronous Clear

Core

Array

Data Input I/O Register with

Active High Enable

Active High Clear

Positive Edge Triggered Data Output Register and

Enable Output Register with

Active High Enable

Active High Clear

Positive Edge Triggered

Enable

CLK

Pad Out

CLK

Enable

CLR

Data_out

Data

EOUT

DOUT

DFN1E1C1

CLR

DFN1E1C1

CLR

DFN1E1C1

CLR

D_Enable

CLKBUF

INBUF

TRIBUF

INBUF INBUF CLKBUF

INBUF

Device Architecture

2-215 Revision 8

Table 2-175 • Parameter Definitions and Measuring Nodes

Parameter Name Parameter Definition

Measuring Nodes

(from, to)*

tOCLKQ Clock-to-Q of the Output Data Register HH, DOUT

tOSUD Data Setup Time for the Output Data Register FF, HH

tOHD Data Hold Time for the Output Data Register FF, HH

tOSUE Enable Setup Time for the Output Data Register GG, HH

tOHE Enable Hold Time for the Output Data Register GG, HH

tOCLR2Q Asynchronous Clear-to-Q of the Output Data Register LL, DOUT

tOREMCLR Asynchronous Clear Removal Time for the Output Data Register LL, HH

tORECCLR Asynchronous Clear Recovery Time for the Output Data Register LL, HH

tOECLKQ Clock-to-Q of the Output Enable Register HH, EOUT

tOESUD Data Setup Time for the Output Enable Register JJ, HH

tOEHD Data Hold Time for the Output Enable Register JJ, HH

tOESUE Enable Setup Time for the Output Enable Register KK, HH

tOEHE Enable Hold Time for the Output Enable Register KK, HH

tOECLR2Q Asynchronous Clear-to-Q of the Output Enable Register II, EOUT

tOEREMCLR Asynchronous Clear Removal Time for the Output Enable Register II, HH

tOERECCLR Asynchronous Clear Recovery Time for the Output Enable Register II, HH

tICLKQ Clock-to-Q of the Input Data Register AA, EE

tISUD Data Setup Time for the Input Data Register CC, AA

tIHD Data Hold Time for the Input Data Register CC, AA

tISUE Enable Setup Time for the Input Data Register BB, AA

tIHE Enable Hold Time for the Input Data Register BB, AA

tICLR2Q Asynchronous Clear-to-Q of the Input Data Register DD, EE

tIREMCLR Asynchronous Clear Removal Time for the Input Data Register DD, AA

tIRECCLR Asynchronous Clear Recovery Time for the Input Data Register DD, AA

Note: *See Figure 2-138 on page 2-214 for more information.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-216

Input Register

Timing Characteristics

Figure 2-139 • Input Register Timing Diagram

50%

Preset

Clear

Out_1

CLK

Data

Enable

ISUE

50%

ISUD

IHD

50% 50%

ICLKQ

IHE

IRECPRE

IREMPRE

IRECCLR

IREMCLR

IWCLR

IWPRE

IPRE2Q

ICLR2Q

ICKMPWH

ICKMPWL

50% 50%

50% 50% 50%

50% 50%

50% 50% 50% 50% 50% 50%

50%

Table 2-176 • Input Data Register Propagation Delays

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V

Parameter Description –2 –1 Std. Units

tICLKQ Clock-to-Q of the Input Data Register 0.24 0.27 0.32 ns

tISUD Data Setup Time for the Input Data Register 0.26 0.30 0.35 ns

tIHD Data Hold Time for the Input Data Register 0.00 0.00 0.00 ns

tISUE Enable Setup Time for the Input Data Register 0.37 0.42 0.50 ns

tIHE Enable Hold Time for the Input Data Register 0.00 0.00 0.00 ns

tICLR2Q Asynchronous Clear-to-Q of the Input Data Register 0.45 0.52 0.61 ns

tIPRE2Q Asynchronous Preset-to-Q of the Input Data Register 0.45 0.52 0.61 ns

tIREMCLR Asynchronous Clear Removal Time for the Input Data Register 0.00 0.00 0.00 ns

tIRECCLR Asynchronous Clear Recovery Time for the Input Data Register 0.22 0.25 0.30 ns

tIREMPRE Asynchronous Preset Removal Time for the Input Data Register 0.00 0.00 0.00 ns

tIRECPRE Asynchronous Preset Recovery Time for the Input Data Register 0.22 0.25 0.30 ns

tIWCLR Asynchronous Clear Minimum Pulse Width for the Input Data Register 0.22 0.25 0.30 ns

tIWPRE Asynchronous Preset Minimum Pulse Width for the Input Data Register 0.22 0.25 0.30 ns

tICKMPWH Clock Minimum Pulse Width High for the Input Data Register 0.36 0.41 0.48 ns

tICKMPWL Clock Minimum Pulse Width Low for the Input Data Register 0.32 0.37 0.43 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Device Architecture

2-217 Revision 8

Output Register

Timing Characteristics

Figure 2-140 • Output Register Timing Diagram

Preset

Clear

DOUT

CLK

Data_out

Enable

OSUE

50%

OSUD

OHD

50% 50%

OCLKQ

OHE

ORECPRE

OREMPRE

ORECCLR

OREMCLR

OWCLR

OWPRE

OPRE2Q

OCLR2Q

OCKMPWH

OCKMPWL

50% 50%

50% 50% 50%

50% 50%

50% 50% 50% 50% 50% 50%

50%

Table 2-177 • Output Data Register Propagation Delays

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V

Parameter Description –2 –1 Std. Units

tOCLKQ Clock-to-Q of the Output Data Register 0.59 0.67 0.79 ns

tOSUD Data Setup Time for the Output Data Register 0.31 0.36 0.42 ns

tOHD Data Hold Time for the Output Data Register 0.00 0.00 0.00 ns

tOSUE Enable Setup Time for the Output Data Register 0.44 0.50 0.59 ns

tOHE Enable Hold Time for the Output Data Register 0.00 0.00 0.00 ns

tOCLR2Q Asynchronous Clear-to-Q of the Output Data Register 0.80 0.91 1.07 ns

tOPRE2Q Asynchronous Preset-to-Q of the Output Data Register 0.80 0.91 1.07 ns

tOREMCLR Asynchronous Clear Removal Time for the Output Data Register 0.00 0.00 0.00 ns

tORECCLR Asynchronous Clear Recovery Time for the Output Data Register 0.22 0.25 0.30 ns

tOREMPRE Asynchronous Preset Removal Time for the Output Data Register 0.00 0.00 0.00 ns

tORECPRE Asynchronous Preset Recovery Time for the Output Data Register 0.22 0.25 0.30 ns

tOWCLR Asynchronous Clear Minimum Pulse Width for the Output Data Register 0.22 0.25 0.30 ns

tOWPRE Asynchronous Preset Minimum Pulse Width for the Output Data

0.22 0.25 0.30 ns

tOCKMPWH Clock Minimum Pulse Width High for the Output Data Register 0.36 0.41 0.48 ns

tOCKMPWL Clock Minimum Pulse Width Low for the Output Data Register 0.32 0.37 0.43 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-218

Output Enable Register

Timing Characteristics

Figure 2-141 • Output Enable Register Timing Diagram

50%

Preset

Clear

EOUT

CLK

D_Enable

Enable

OESUE

50%

OESUD

OEHD

50% 50%

OECLKQ

OEHE

OERECPRE

OEREMPRE

OERECCLR

OEREMCLR

OEWCLR

OEWPRE

OEPRE2Q

OECLR2Q

OECKMPWH

OECKMPWL

50% 50%

50% 50% 50%

50% 50%

50% 50% 50% 50% 50% 50%

50%

Table 2-178 • Output Enable Register Propagation Delays

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V

Parameter Description –2 –1 Std. Units

tOECLKQ Clock-to-Q of the Output Enable Register 0.44 0.51 0.59 ns

tOESUD Data Setup Time for the Output Enable Register 0.31 0.36 0.42 ns

tOEHD Data Hold Time for the Output Enable Register 0.00 0.00 0.00 ns

tOESUE Enable Setup Time for the Output Enable Register 0.44 0.50 0.58 ns

tOEHE Enable Hold Time for the Output Enable Register 0.00 0.00 0.00 ns

tOECLR2Q Asynchronous Clear-to-Q of the Output Enable Register 0.67 0.76 0.89 ns

tOEPRE2Q Asynchronous Preset-to-Q of the Output Enable Register 0.67 0.76 0.89 ns

tOEREMCLR Asynchronous Clear Removal Time for the Output Enable Register 0.00 0.00 0.00 ns

tOERECCLR Asynchronous Clear Recovery Time for the Output Enable Register 0.22 0.25 0.30 ns

tOEREMPRE Asynchronous Preset Removal Time for the Output Enable Register 0.00 0.00 0.00 ns

tOERECPRE Asynchronous Preset Recovery Time for the Output Enable Register 0.22 0.25 0.30 ns

tOEWCLR Asynchronous Clear Minimum Pulse Width for the Output Enable

0.22 0.25 0.30 ns

tOEWPRE Asynchronous Preset Minimum Pulse Width for the Output Enable

0.22 0.25 0.30 ns

tOECKMPWH Clock Minimum Pulse Width High for the Output Enable Register 0.36 0.41 0.48 ns

tOECKMPWL Clock Minimum Pulse Width Low for the Output Enable Register 0.32 0.37 0.43 ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Device Architecture

2-219 Revision 8

DDR Module Specifications

Input DDR Module

Figure 2-142 • Input DDR Timing Model

Table 2-179 • Parameter Definitions

Parameter Name Parameter Definition Measuring Nodes (from, to)

tDDRICLKQ1 Clock-to-Out Out_QR B, D

tDDRICLKQ2 Clock-to-Out Out_QF B, E

tDDRISUD Data Setup Time of DDR Input A, B

tDDRIHD Data Hold Time of DDR Input A, B

tDDRICLR2Q1 Clear-to-Out Out_QR C, D

tDDRICLR2Q2 Clear-to-Out Out_QF C, E

tDDRIREMCLR Clear Removal C, B

tDDRIRECCLR Clear Recovery C, B

Input DDR

Data

CLK

CLKBUF

INBUF

Out_QF

(to core)

FF2

FF1

INBUF

CLR

DDR_IN

Out_QR

(to core)

Fusion Family of Mixed Signal FPGAs

Revision 8 2-220

Timing Characteristics

Figure 2-143 • Input DDR Timing Diagram

DDRICLR2Q2

DDRIREMCLR

DDRIRECCLR

DDRICLR2Q1

12 3 4 5 6 7 8 9

CLK

Data

CLR

Out_QR

Out_QF

DDRICLKQ1

246

357

DDRIHD

DDRISUD

DDRICLKQ2

Table 2-180 • Input DDR Propagation Delays

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V

Parameter Description –2 –1 Std. Units

tDDRICLKQ1 Clock-to-Out Out_QR for Input DDR 0.39 0.44 0.52 ns

tDDRICLKQ2 Clock-to-Out Out_QF for Input DDR 0.27 0.31 0.37 ns

tDDRISUD Data Setup for Input DDR 0.28 0.32 0.38 ns

tDDRIHD Data Hold for Input DDR 0.00 0.00 0.00 ns

tDDRICLR2Q1 Asynchronous Clear-to-Out Out_QR for Input DDR 0.57 0.65 0.76 ns

tDDRICLR2Q2 Asynchronous Clear-to-Out Out_QF for Input DDR 0.46 0.53 0.62 ns

tDDRIREMCLR Asynchronous Clear Removal Time for Input DDR 0.00 0.00 0.00 ns

tDDRIRECCLR Asynchronous Clear Recovery Time for Input DDR 0.22 0.25 0.30 ns

tDDRIWCLR Asynchronous Clear Minimum Pulse Width for Input DDR 0.22 0.25 0.30 ns

tDDRICKMPWH Clock Minimum Pulse Width High for Input DDR 0.36 0.41 0.48 ns

tDDRICKMPWL Clock Minimum Pulse Width Low for Input DDR 0.32 0.37 0.43 ns

FDDRIMAX Maximum Frequency for Input DDR 1404 1232 1048 MHz

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Device Architecture

2-221 Revision 8

Output DDR

Figure 2-144 • Output DDR Timing Model

Table 2-181 • Parameter Definitions

Parameter Name Parameter Definition Measuring Nodes (From, To)

tDDROCLKQ Clock-to-Out B, E

tDDROCLR2Q Asynchronous Clear-to-Out C, E

tDDROREMCLR Clear Removal C, B

tDDRORECCLR Clear Recovery C, B

tDDROSUD1 Data Setup Data_F A, B

tDDROSUD2 Data Setup Data_R D, B

tDDROHD1 Data Hold Data_F A, B

tDDROHD2 Data Hold Data_R D, B

Data_F

(from core)

CLK

CLKBUF

Out

FF2

INBUF

CLR

DDR_OUT

FF1

OUTBUF

Data_R

(from core)

Fusion Family of Mixed Signal FPGAs

Revision 8 2-222

Timing Characteristics

Figure 2-145 • Output DDR Timing Diagram

116

910

28 3 9

tDDROREMCLR

tDDROHD1

tDDROSUD1

tDDROHD2

tDDROSUD2

tDDROCLKQ

tDDRORECCLR

CLK

Data_R

Data_F

CLR

Out

tDDROCLR2Q

7104

Table 2-182 • Output DDR Propagation Delays

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V

Parameter Description –2 –1 Std. Units

tDDROCLKQ Clock-to-Out of DDR for Output DDR 0.70 0.80 0.94 ns

tDDROSUD1 Data_F Data Setup for Output DDR 0.38 0.43 0.51 ns

tDDROSUD2 Data_R Data Setup for Output DDR 0.38 0.43 0.51 ns

tDDROHD1 Data_F Data Hold for Output DDR 0.00 0.00 0.00 ns

tDDROHD2 Data_R Data Hold for Output DDR 0.00 0.00 0.00 ns

tDDROCLR2Q Asynchronous Clear-to-Out for Output DDR 0.80 0.91 1.07 ns

tDDROREMCLR Asynchronous Clear Removal Time for Output DDR 0.00 0.00 0.00 ns

tDDRORECCLR Asynchronous Clear Recovery Time for Output DDR 0.22 0.25 0.30 ns

tDDROWCLR1 Asynchronous Clear Minimum Pulse Width for Output DDR 0.22 0.25 0.30 ns

tDDROCKMPWH Clock Minimum Pulse Width High for the Output DDR 0.36 0.41 0.48 ns

tDDROCKMPWL Clock Minimum Pulse Width Low for the Output DDR 0.32 0.37 0.43 ns

FDDOMAX Maximum Frequency for the Output DDR 1404 1232 1048 MHz

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Device Architecture

2-223 Revision 8

Pin Descriptions

Supply Pins

GND Ground

Ground supply voltage to the core, I/O outputs, and I/O logic.

GNDQ Ground (quiet)

Quiet ground supply voltage to input buffers of I/O banks. Within the package, the GNDQ plane is

decoupled from the simultaneous switching noise originated from the output buffer ground domain. This

minimizes the noise transfer within the package and improves input signal integrity. GNDQ needs to

always be connected on the board to GND. Note: In FG256, FG484, and FG676 packages, GNDQ and

GND pins are connected within the package and are labeled as GND pins in the respective package pin

assignment tables.

ADCGNDREF Analog Reference Ground

Analog ground reference used by the ADC. This pad should be connected to a quiet analog ground.

GNDA Ground (analog)

Quiet ground supply voltage to the Analog Block of Fusion devices. The use of a separate analog ground

helps isolate the analog functionality of the Fusion device from any digital switching noise. A 0.2 V

maximum differential voltage between GND and GNDA/GNDQ should apply to system implementation.

GNDAQ Ground (analog quiet)

Quiet ground supply voltage to the analog I/O of Fusion devices. The use of a separate analog ground

helps isolate the analog functionality of the Fusion device from any digital switching noise. A 0.2 V

maximum differential voltage between GND and GNDA/GNDQ should apply to system implementation.

Note: In FG256, FG484, and FG676 packages, GNDAQ and GNDA pins are connected within the

package and are labeled as GNDA pins in the respective package pin assignment tables.

GNDNVM Flash Memory Ground

Ground supply used by the Fusion device's flash memory block module(s).

GNDOSC Oscillator Ground

Ground supply for both integrated RC oscillator and crystal oscillator circuit.

VCC15A Analog Power Supply (1.5 V)

1.5 V clean analog power supply input for use by the 1.5 V portion of the analog circuitry.

VCC33A Analog Power Supply (3.3 V)

3.3 V clean analog power supply input for use by the 3.3 V portion of the analog circuitry.

VCC33N Negative 3.3 V Output

This is the –3.3 V output from the voltage converter. A 2.2 µF capacitor must be connected from this pin

to ground.

VCC33PMP Analog Power Supply (3.3 V)

3.3 V clean analog power supply input for use by the analog charge pump. To avoid high current draw,

VCC33PMP should be powered up simultaneously with or after VCC33A.

VCCNVM Flash Memory Block Power Supply (1.5 V)

1.5 V power supply input used by the Fusion device's flash memory block module(s). To avoid high

current draw, VCC should be powered up before or simultaneously with VCCNVM.

VCCOSC Oscillator Power Supply (3.3 V)

Power supply for both integrated RC oscillator and crystal oscillator circuit. The internal 100 MHz

oscillator, powered by the VCCOSC pin, is needed for device programming, operation of the VDDN33

pump, and eNVM operation. VCCOSC is off only when VCCA is off. VCCOSC must be powered

whenever the Fusion device needs to function.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-224

VCC Core Supply Voltage

Supply voltage to the FPGA core, nominally 1.5 V. VCC is also required for powering the JTAG state

machine, in addition to VJTAG. Even when a Fusion device is in bypass mode in a JTAG chain of

interconnected devices, both VCC and VJTAG must remain powered to allow JTAG signals to pass

through the Fusion device.

VCCIBx I/O Supply Voltage

Supply voltage to the bank's I/O output buffers and I/O logic. Bx is the I/O bank number. There are either

four (AFS090 and AFS250) or five (AFS600 and AFS1500) I/O banks on the Fusion devices plus a

dedicated VJTAG bank.

Each bank can have a separate VCCI connection. All I/Os in a bank will run off the same VCCIBx supply.

VCCI can be 1.5 V, 1.8 V, 2.5 V, or 3.3 V, nominal voltage. Unused I/O banks should have their

corresponding VCCI pins tied to GND.

VCCPLA/B PLL Supply Voltage

Supply voltage to analog PLL, nominally 1.5 V, where A and B refer to the PLL. AFS090 and AFS250

each have a single PLL. The AFS600 and AFS1500 devices each have two PLLs. Microsemi

recommends tying VCCPLX to VCC and using proper filtering circuits to decouple VCC noise from PLL.

If unused, VCCPLA/B should be tied to GND.

VCOMPLA/B Ground for West and East PLL

VCOMPLA is the ground of the west PLL (CCC location F) and VCOMPLB is the ground of the east PLL

(CCC location C).

VJTAG JTAG Supply Voltage

Fusion devices have a separate bank for the dedicated JTAG pins. The JTAG pins can be run at any

voltage from 1.5 V to 3.3 V (nominal). Isolating the JTAG power supply in a separate I/O bank gives

greater flexibility in supply selection and simplifies power supply and PCB design. If the JTAG interface is

neither used nor planned to be used, the VJTAG pin together with the TRST pin could be tied to GND. It

should be noted that VCC is required to be powered for JTAG operation; VJTAG alone is insufficient. If a

Fusion device is in a JTAG chain of interconnected boards and it is desired to power down the board

containing the Fusion device, this may be done provided both VJTAG and VCC to the Fusion part remain

powered; otherwise, JTAG signals will not be able to transition the Fusion device, even in bypass mode.

VPUMP Programming Supply Voltage

Fusion devices support single-voltage ISP programming of the configuration flash and FlashROM. For

programming, VPUMP should be in the 3.3 V +/-5% range. During normal device operation, VPUMP can

be left floating or can be tied to any voltage between 0 V and 3.6 V.

When the VPUMP pin is tied to ground, it shuts off the charge pump circuitry, resulting in no sources of

oscillation from the charge pump circuitry.

For proper programming, 0.01 µF and 0.33 µF capacitors (both rated at 16 V) are to be connected in

parallel across VPUMP and GND, and positioned as close to the FPGA pins as possible.

Device Architecture

2-225 Revision 8

User-Defined Supply Pins

VREF I/O Voltage Reference

Reference voltage for I/O minibanks. Both AFS600 and AFS1500 (north bank only) support Microsemi

Pro I/O. These I/O banks support voltage reference standard I/O. The VREF pins are configured by the

user from regular I/Os, and any I/O in a bank, except JTAG I/Os, can be designated as the voltage

reference I/O. Only certain I/O standards require a voltage reference—HSTL (I) and (II), SSTL2 (I) and

(II), SSTL3 (I) and (II), and GTL/GTL+. One VREF pin can support the number of I/Os available in its

minibank.

VAREF Analog Reference Voltage

The Fusion device can be configured to generate a 2.56 V internal reference voltage that can be used by

the ADC. While using the internal reference, the reference voltage is output on the VAREF pin for use as

a system reference. If a different reference voltage is required, it can be supplied by an external source

and applied to this pin. The valid range of values that can be supplied to the ADC is 1.0 V to 3.3 V. When

VAREF is internally generated by the Fusion device, a bypass capacitor must be connected from this pin

to ground. The value of the bypass capacitor should be between 3.3 µF and 22 µF, which is based on the

needs of the individual designs. The choice of the capacitor value has an impact on the settling time it

takes the VAREF signal to reach the required specification of 2.56 V to initiate valid conversions by the

ADC. If the lower capacitor value is chosen, the settling time required for VAREF to achieve 2.56 V will

be shorter than when selecting the larger capacitor value. The above range of capacitor values supports

the accuracy specification of the ADC, which is detailed in the datasheet. Designers choosing the smaller

capacitor value will not obtain as much margin in the accuracy as that achieved with a larger capacitor

value. Depending on the capacitor value selected in the Analog System Builder, a tool in Libero SoC, an

automatic delay circuit will be generated using logic tiles available within the FPGA to ensure that VAREF

has achieved the 2.56 V value. Microsemi recommends customers use 10 µF as the value of the bypass

capacitor. Designers choosing to use an external VAREF need to ensure that a stable and clean VAREF

source is supplied to the VAREF pin before initiating conversions by the ADC. Designers should also

make sure that the ADCRESET signal is deasserted before initiating valid conversions.2

If the user connects VAREF to external 3.3 V on their board, the internal VAREF driving OpAmp tries to

bring the pin down to the nominal 2.56 V until the device is programmed and up/functional. Under this

scenario, it is recommended to connect an external 3.3 V supply through a ~1 KOhm resistor to limit

current, along with placing a 10-100nF capacitor between VAREF and GNDA.

User Pins

I/O User Input/Output

The I/O pin functions as an input, output, tristate, or bidirectional buffer. Input and output signal levels are

compatible with the I/O standard selected. Unused I/O pins are configured as inputs with pull-up

resistors.

During programming, I/Os become tristated and weakly pulled up to VCCI. With the VCCI and VCC

supplies continuously powered up, when the device transitions from programming to operating mode, the

I/Os get instantly configured to the desired user configuration.

Unused I/Os are configured as follows:

• Output buffer is disabled (with tristate value of high impedance)

• Input buffer is disabled (with tristate value of high impedance)

• Weak pull-up is programmed

Axy Analog Input/Output

Analog I/O pin, where x is the analog pad type (C = current pad, G = Gate driver pad, T = Temperature

pad, V = Voltage pad) and y is the Analog Quad number (0 to 9). There is a minimum 1 M to ground on

AV, AC, and AT. This pin can be left floating when it is unused.

2. The ADC is functional with an external reference down to 1V, however to meet the performance parameters highlighted in the

datasheet refer to the VAREF specification in Table 3-2 on page 3-3.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-226

ATRTNxTemperature Monitor Return

AT returns are the returns for the temperature sensors. The cathode terminal of the external diodes

should be connected to these pins. There is one analog return pin for every two Analog Quads. The x in

the ATRTNx designator indicates the quad pairing (x= 0 for AQ1 and AQ2, x= 1 for AQ2 and AQ3, ..,

x= 4 for AQ8 and AQ9). The signals that drive these pins are called out as ATRETURNxy in the software

(where x and y refer to the quads that share the return signal). ATRTN is internally connected to ground.

It can be left floating when it is unused. The maximum capacitance allowed across the AT pins is 500 pF.

GL Globals

GL I/Os have access to certain clock conditioning circuitry (and the PLL) and/or have direct access to the

global network (spines). Additionally, the global I/Os can be used as Pro I/Os since they have identical

capabilities. Unused GL pins are configured as inputs with pull-up resistors. See more detailed

descriptions of global I/O connectivity in the "Clock Conditioning Circuits" section on page 2-22.

Refer to the "User I/O Naming Convention" section on page 2-158 for a description of naming of global

pins.

JTAG Pins

Fusion devices have a separate bank for the dedicated JTAG pins. The JTAG pins can be run at any

voltage from 1.5 V to 3.3 V (nominal). VCC must also be powered for the JTAG state machine to operate,

even if the device is in bypass mode; VJTAG alone is insufficient. Both VJTAG and VCC to the Fusion

part must be supplied to allow JTAG signals to transition the Fusion device.

Isolating the JTAG power supply in a separate I/O bank gives greater flexibility with supply selection and

simplifies power supply and PCB design. If the JTAG interface is neither used nor planned to be used,

the VJTAG pin together with the TRST pin could be tied to GND.

TCK Test Clock

Test clock input for JTAG boundary scan, ISP, and UJTAG. The TCK pin does not have an internal pull-

up/-down resistor. If JTAG is not used, Microsemi recommends tying off TCK to GND or VJTAG through

a resistor placed close to the FPGA pin. This prevents JTAG operation in case TMS enters an undesired

state.

Note that to operate at all VJTAG voltages, 500  to 1 k will satisfy the requirements. Refer to

Table 2-183 for more information.

TDI Test Data Input

Serial input for JTAG boundary scan, ISP, and UJTAG usage. There is an internal weak pull-up resistor

on the TDI pin.

TDO Test Data Output

Serial output for JTAG boundary scan, ISP, and UJTAG usage.

Table 2-183 • Recommended Tie-Off Values for the TCK and TRST Pins

VJTAG Tie-Off Resistance2, 3

VJTAG at 3.3 V 200  to 1 k

VJTAG at 2.5 V 200  to 1 k

VJTAG at 1.8 V 500  to 1 k

VJTAG at 1.5 V 500  to 1 k

Notes:

1. Equivalent parallel resistance if more than one device is on JTAG chain.

2. The TCK pin can be pulled up/down.

3. The TRST pin can only be pulled down.

Device Architecture

2-227 Revision 8

TMS Test Mode Select

The TMS pin controls the use of the IEEE1532 boundary scan pins (TCK, TDI, TDO, TRST). There is an

internal weak pull-up resistor on the TMS pin.

TRST Boundary Scan Reset Pin

The TRST pin functions as an active low input to asynchronously initialize (or reset) the boundary scan

circuitry. There is an internal weak pull-up resistor on the TRST pin. If JTAG is not used, an external pull-

down resistor could be included to ensure the TAP is held in reset mode. The resistor values must be

chosen from Table 2-183 and must satisfy the parallel resistance value requirement. The values in

Table 2-183 correspond to the resistor recommended when a single device is used and to the equivalent

parallel resistor when multiple devices are connected via a JTAG chain.

In critical applications, an upset in the JTAG circuit could allow entering an undesired JTAG state. In such

cases, Microsemi recommends tying off TRST to GND through a resistor placed close to the FPGA pin.

Note that to operate at all VJTAG voltages, 500  to 1 k will satisfy the requirements.

Special Function Pins

NC No Connect

This pin is not connected to circuitry within the device. These pins can be driven to any voltage or can be

left floating with no effect on the operation of the device.

DC Don't Connect

This pin should not be connected to any signals on the PCB. These pins should be left unconnected.

NCAP Negative Capacitor

Negative Capacitor is where the negative terminal of the charge pump capacitor is connected. A

capacitor, with a 2.2 µF recommended value, is required to connect between PCAP and NCAP.

PCAP Positive Capacitor

Positive Capacitor is where the positive terminal of the charge pump capacitor is connected. A capacitor,

with a 2.2 µF recommended value, is required to connect between PCAP and NCAP.

PUB Push Button

Push button is the connection for the external momentary switch used to turn on the 1.5 V voltage

regulator and can be floating if not used.

PTBASE Pass Transistor Base

Pass Transistor Base is the control signal of the voltage regulator. This pin should be connected to the

base of the external pass transistor used with the 1.5 V internal voltage regulator and can be floating if

not used.

PTEM Pass Transistor Emitter

Pass Transistor Emitter is the feedback input of the voltage regulator.

This pin should be connected to the emitter of the external pass transistor used with the 1.5 V internal

voltage regulator and can be floating if not used.

XTAL1 Crystal Oscillator Circuit Input

Input to crystal oscillator circuit. Pin for connecting external crystal, ceramic resonator, RC network, or

external clock input. When using an external crystal or ceramic oscillator, external capacitors are also

recommended (Please refer to the crystal oscillator manufacturer for proper capacitor value).

If using external RC network or clock input, XTAL1 should be used and XTAL2 left unconnected. In the

case where the Crystal Oscillator block is not used, the XTAL1 pin should be connected to GND and the

XTAL2 pin should be left floating.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-228

XTAL2 Crystal Oscillator Circuit Input

Input to crystal oscillator circuit. Pin for connecting external crystal, ceramic resonator, RC network, or

external clock input. When using an external crystal or ceramic oscillator, external capacitors are also

recommended (Please refer to the crystal oscillator manufacturer for proper capacitor value).

If using external RC network or clock input, XTAL1 should be used and XTAL2 left unconnected. In the

case where the Crystal Oscillator block is not used, the XTAL1 pin should be connected to GND and the

XTAL2 pin should be left floating.

Security

Fusion devices have a built-in 128-bit AES decryption core. The decryption core facilitates highly secure,

in-system programming of the FPGA core array fabric and the FlashROM. The FlashROM and the FPGA

core fabric can be programmed independently from each other, allowing the FlashROM to be updated

without the need for change to the FPGA core fabric. The AES master key is stored in on-chip nonvolatile

memory (flash). The AES master key can be preloaded into parts in a security-protected programming

environment (such as the Microsemi in-house programming center), and then “blank” parts can be

shipped to an untrusted programming or manufacturing center for final personalization with an AES-

encrypted bitstream. Late stage product changes or personalization can be implemented easily and with

high level security by simply sending a STAPL file with AES-encrypted data. Highly secure remote field

updates over public networks (such as the Internet) are possible by sending and programming a STAPL

file with AES-encrypted data. For more information, refer to the Fusion Security application note.

128-Bit AES Decryption

The 128-bit AES standard (FIPS-197) block cipher is the National Institute of Standards and Technology

(NIST) replacement for DES (Data Encryption Standard FIPS46-2). AES has been designed to protect

sensitive government information well into the 21st century. It replaces the aging DES, which NIST

adopted in 1977 as a Federal Information Processing Standard used by federal agencies to protect

sensitive, unclassified information. The 128-bit AES standard has 3.4 × 1038 possible 128-bit key

variants, and it has been estimated that it would take 1,000 trillion years to crack 128-bit AES cipher text

using exhaustive techniques. Keys are stored (protected with security) in Fusion devices in nonvolatile

flash memory. All programming files sent to the device can be authenticated by the part prior to

programming to ensure that bad programming data is not loaded into the part that may possibly damage

it. All programming verification is performed on-chip, ensuring that the contents of Fusion devices remain

as secure as possible.

AES decryption can also be used on the 1,024-bit FlashROM to allow for remote updates of the

FlashROM contents. This allows for easy support of subscription model products and protects them with

measures designed to provide the highest level of security available. See the application note Fusion

Security for more details.

AES for Flash Memory

AES decryption can also be used on the flash memory blocks. This provides the best available security

during update of the flash memory blocks. During runtime, the encrypted data can be clocked in via the

JTAG interface. The data can be passed through the internal AES decryption engine, and the decrypted

data can then be stored in the flash memory block.

Programming

Programming can be performed using various programming tools, such as Silicon Sculptor II (BP Micro

Systems) or FlashPro3 (Microsemi).

The user can generate STP programming files from the Designer software and can use these files to

program a device.

Fusion devices can be programmed in-system. During programming, VCCOSC is needed in order to

power the internal 100 MHz oscillator. This oscillator is used as a source for the 20 MHz oscillator that is

used to drive the charge pump for programming.

Device Architecture

2-229 Revision 8

ISP

Fusion devices support IEEE 1532 ISP via JTAG and require a single VPUMP voltage of 3.3 V during

programming. In addition, programming via a microcontroller in a target system can be achieved. Refer to

the standard or the “In-System Programming (ISP) of Microsemi's Low Power Flash Devices Using

FlashPro4/3/3X” chapter of the Fusion FPGA Fabric User’s Guide for more details.

JTAG IEEE 1532

Programming with IEEE 1532

Fusion devices support the JTAG-based IEEE1532 standard for ISP. As part of this support, when a

Fusion device is in an unprogrammed state, all user I/O pins are disabled. This is achieved by keeping

the global IO_EN signal deactivated, which also has the effect of disabling the input buffers.

Consequently, the SAMPLE instruction will have no effect while the Fusion device is in this

unprogrammed state—different behavior from that of the ProASICPLUS® device family. This is done

because SAMPLE is defined in the IEEE1532 specification as a noninvasive instruction. If the input

buffers were to be enabled by SAMPLE temporarily turning on the I/Os, then it would not truly be a

noninvasive instruction. Refer to the standard or the “In-System Programming (ISP) of Microsemi's Low

Power Flash Devices Using FlashPro4/3/3X” chapter of the Fusion FPGA Fabric User’s Guide for more

details.

Boundary Scan

Fusion devices are compatible with IEEE Standard 1149.1, which defines a hardware architecture and

the set of mechanisms for boundary scan testing. The basic Fusion boundary scan logic circuit is

composed of the test access port (TAP) controller, test data registers, and instruction register (Figure 2-

146 on page 2-230). This circuit supports all mandatory IEEE 1149.1 instructions (EXTEST,

SAMPLE/PRELOAD, and BYPASS) and the optional IDCODE instruction (Table 2-185 on page 2-230).

Each test section is accessed through the TAP, which has five associated pins: TCK (test clock input),

TDI, TDO (test data input and output), TMS (test mode selector), and TRST (test reset input). TMS, TDI,

and TRST are equipped with pull-up resistors to ensure proper operation when no input data is supplied

to them. These pins are dedicated for boundary scan test usage. Refer to the "JTAG Pins" section on

page 2-226 for pull-up/-down recommendations for TDO and TCK pins. The TAP controller is a 4-bit state

machine (16 states) that operates as shown in Figure 2-146 on page 2-230. The 1s and 0s represent the

values that must be present on TMS at a rising edge of TCK for the given state transition to occur. IR and

DR indicate that the instruction register or the data register is operating in that state.

The TAP controller receives two control inputs (TMS and TCK) and generates control and clock signals

for the rest of the test logic architecture. On power-up, the TAP controller enters the Test-Logic-Reset

state. To guarantee a reset of the controller from any of the possible states, TMS must remain High for

five TCK cycles. The TRST pin can also be used to asynchronously place the TAP controller in the Test-

Logic-Reset state.

Fusion devices support three types of test data registers: bypass, device identification, and boundary

scan. The bypass register is selected when no other register needs to be accessed in a device. This

speeds up test data transfer to other devices in a test data path. The 32-bit device identification register

is a shift register with four fields (LSB, ID number, part number, and version). The boundary scan register

observes and controls the state of each I/O pin. Each I/O cell has three boundary scan register cells,

each with a serial-in, serial-out, parallel-in, and parallel-out pin.

The serial pins are used to serially connect all the boundary scan register cells in a device into a

boundary scan register chain, which starts at the TDI pin and ends at the TDO pin. The parallel ports are

Table 2-184 • TRST and TCK Pull-Down Recommendations

VJTAG Tie-Off Resistance*

VJTAG at 3.3 V 200  to 1 k

VJTAG at 2.5 V 200  to 1 k

VJTAG at 1.8 V 500  to 1 k

VJTAG at 1.5 V 500  to 1 k

Note: *Equivalent parallel resistance if more than one device is on JTAG chain.

Fusion Family of Mixed Signal FPGAs

Revision 8 2-230

connected to the internal core logic I/O tile and the input, output, and control ports of an I/O buffer to

capture and load data into the register to control or observe the logic state of each I/O.

Figure 2-146 • Boundary Scan Chain in Fusion

Table 2-185 • Boundary Scan Opcodes

Hex Opcode

EXTEST 00

HIGHZ 07

USERCODE 0E

SAMPLE/PRELOAD 01

IDCODE 0F

CLAMP 05

BYPASS FF

Device

Logic

TDI

TCK

TMS

TRST

TDO

I/OI/OI/O I/OI/O

I/O

Bypass Register

Instruction

TAP

Controller

Test Data

Registers

Device Architecture

2-231 Revision 8

IEEE 1532 Characteristics

JTAG timing delays do not include JTAG I/Os. To obtain complete JTAG timing, add I/O buffer delays to

the corresponding standard selected; refer to the I/O timing characteristics in the "User I/Os" section on

page 2-132 for more details.

Timing Characteristics

Table 2-186 • JTAG 1532

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V

Parameter Description –2 –1 Std. Units

tDISU Test Data Input Setup Time 0.50 0.57 0.67 ns

tDIHD Test Data Input Hold Time 1.00 1.13 1.33 ns

tTMSSU Test Mode Select Setup Time 0.50 0.57 0.67 ns

tTMDHD Test Mode Select Hold Time 1.00 1.13 1.33 ns

tTCK2Q Clock to Q (data out) 6.00 6.80 8.00 ns

tRSTB2Q Reset to Q (data out) 20.00 22.67 26.67 ns

FTCKMAX TCK Maximum Frequency 25.00 22.00 19.00 MHz

tTRSTREM ResetB Removal Time 0.00 0.00 0.00 ns

tTRSTREC ResetB Recovery Time 0.20 0.23 0.27 ns

tTRSTMPW ResetB Minimum Pulse TBD TBD TBD ns

Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

Revision 8 3-1

3 – DC and Power Characteristics

General Specifications

Operating Conditions

Stresses beyond those listed in Table 3-1 may cause permanent damage to the device.

Exposure to absolute maximum rated conditions for extended periods may affect device reliability.

Devices should not be operated outside the recommended operating ranges specified in Table 3-2 on

page 3-3.

Table 3-1 • Absolute Maximum Ratings

Symbol Parameter Commercial Industrial Units

VCC DC core supply voltage –0.3 to 1.65 –0.3 to 1.65 V

VJTAG JTAG DC voltage –0.3 to 3.75 –0.3 to 3.75 V

VPUMP Programming voltage –0.3 to 3.75 –0.3 to 3.75 V

VCCPLL Analog power supply (PLL) –0.3 to 1.65 –0.3 to 1.65 V

VCCI DC I/O output buffer supply voltage –0.3 to 3.75 –0.3 to 3.75 V

VI I/O input voltage 1–0.3 V to 3.6 V (when I/O hot insertion mode is

enabled)

–0.3 V to (VCCI + 1 V) or 3.6 V, whichever

voltage is lower (when I/O hot-insertion mode is

disabled)

VCC33A +3.3 V power supply –0.3 to 3.75 2–0.3 to 3.75 2V

VCC33PMP +3.3 V power supply –0.3 to 3.75 2–0.3 to 3.75 2V

VAREF Voltage reference for ADC –0.3 to 3.75 –0.3 to 3.75 V

VCC15A Digital power supply for the analog system –0.3 to 1.65 –0.3 to 1.65 V

VCCNVM Embedded flash power supply –0.3 to 1.65 –0.3 to 1.65 V

VCCOSC Oscillator power supply –0.3 to 3.75 –0.3 to 3.75 V

Notes:

1. The device should be operated within the limits specified by the datasheet. During transitions, the input signal may

undershoot or overshoot according to the limits shown in Table 3-4 on page 3-4.

2. Analog data not valid beyond 3.65 V.

3. The high current mode has a maximum power limit of 20 mW. Appropriate current limit resistors must be used, based on

voltage on the pad.

4. For flash programming and retention maximum limits, refer to Table 3-5 on page 3-5. For recommended operating limits

refer to Table 3-2 on page 3-3.

Fusion Family of Mixed Signal FPGAs

Revision 8 3-2

AV, AC Unpowered, ADC reset asserted or

unconfigured

–11.0 to 12.6 –11.0 to 12.0 V

Analog input (+16 V to +2 V prescaler range) –0.4 to 12.6 –0.4 to 12.0 V

Analog input (+1 V to +0.125 V prescaler

range)

–0.4 to 3.75 –0.4 to 3.75 V

Analog input (–16 V to –2 V prescaler range) –11.0 to 0.4 –11.0 to 0.4 V

Analog input (–1 V to –0.125 V prescaler

range)

–3.75 to 0.4 –3.75 to 0.4 V

Analog input (direct input to ADC) –0.4 to 3.75 –0.4 to 3.75 V

Digital input –0.4 to 12.6 –0.4 to 12.0 V

AG Unpowered, ADC reset asserted or

unconfigured

–11.0 to 12.6 –11.0 to 12.0 V

Low Current Mode (1 µA, 3 µA, 10 µA, 30 µA) –0.4 to 12.6 –0.4 to 12.0 V

Low Current Mode (–1 µA, –3 µA, –10 µA, –30

µA)

–11.0 to 0.4 –11.0 to 0.4 V

High Current Mode 3–11.0 to 12.6 –11.0 to 12.0 V

AT Unpowered, ADC reset asserted or

unconfigured

–0.4 to 16.0 –0.4 to 15.0 V

Analog input (+16 V, 4 V prescaler range) –0.4 to 16.0 –0.4 to 15.0 V

Analog input (direct input to ADC) –0.4 to 3.75 –0.4 to 3.75 V

Digital input –0.4 to 16.0 –0.4 to 15.0 V

TSTG 4Storage temperature –65 to +150 °C

TJ4Junction temperature +125 °C

Table 3-1 • Absolute Maximum Ratings (continued)

Symbol Parameter Commercial Industrial Units

Notes:

1. The device should be operated within the limits specified by the datasheet. During transitions, the input signal may

undershoot or overshoot according to the limits shown in Table 3-4 on page 3-4.

2. Analog data not valid beyond 3.65 V.

3. The high current mode has a maximum power limit of 20 mW. Appropriate current limit resistors must be used, based on

voltage on the pad.

4. For flash programming and retention maximum limits, refer to Table 3-5 on page 3-5. For recommended operating limits

refer to Table 3-2 on page 3-3.

DC and Power Characteristics

3-3 Revision 8

Table 3-2 • Recommended Operating Conditions1

Symbol Parameter2Commercial Industrial Units

TJJunction temperature 0 to +85 –40 to +100 °C

VCC 1.5 V DC core supply voltage 1.425 to 1.575 1.425 to 1.575 V

VJTAG JTAG DC voltage 1.4 to 3.6 1.4 to 3.6 V

VPUMP Programming voltage Programming mode33.15 to 3.45 3.15 to 3.45 V

Operation40 to 3.6 0 to 3.6 V

VCCPLL Analog power supply (PLL) 1.425 to 1.575 1.425 to 1.575 V

VCCI 1.5 V DC supply voltage 1.425 to 1.575 1.425 to 1.575 V

1.8 V DC supply voltage 1.7 to 1.9 1.7 to 1.9 V

2.5 V DC supply voltage 2.3 to 2.7 2.3 to 2.7 V

3.3 V DC supply voltage 3.0 to 3.6 3.0 to 3.6 V

LVDS differential I/O 2.375 to 2.625 2.375 to 2.625 V

LVPECL differential I/O 3.0 to 3.6 3.0 to 3.6 V

VCC33A +3.3 V power supply 2.97 to 3.63 2.97 to 3.63 V

VCC33PMP +3.3 V power supply 2.97 to 3.63 2.97 to 3.63 V

VAREF Voltage reference for ADC 2.527 to 2.593 2.527 to 2.593 V

VCC15A 5Digital power supply for the analog system 1.425 to 1.575 1.425 to 1.575 V

VCCNVM Embedded flash power supply 1.425 to 1.575 1.425 to 1.575 V

VCCOSC Oscillator power supply 2.97 to 3.63 2.97 to 3.63 V

AV, AC 6Unpowered, ADC reset asserted or unconfigured –10.5 to 12.0 –10.5 to 11.6 V

Analog input (+16 V to +2 V prescaler range) –0.3 to 12.0 –0.3 to 11.6 V

Analog input (+1 V to + 0.125 V prescaler range) –0.3 to 3.6 –0.3 to 3.6 V

Analog input (–16 V to –2 V prescaler range) –10.5 to 0.3 –10.5 to 0.3 V

Analog input (–1 V to –0.125 V prescaler range) –3.6 to 0.3 –3.6 to 0.3 V

Analog input (direct input to ADC) –0.3 to 3.6 –0.3 to 3.6 V

Digital input –0.3 to 12.0 –0.3 to 11.6 V

AG 6Unpowered, ADC reset asserted or unconfigured –10.5 to 12.0 –10.5 to 11.6 V

Low Current Mode (1 µA, 3 µA, 10 µA, 30 µA) –0.3 to 12.0 –0.3 to 11.6 V

Low Current Mode (–1 µA, –3 µA, –10 µA, –30 µA) –10.5 to 0.3 –10.5 to 0.3 V

High Current Mode 7–10.5 to 12.0 –10.5 to 11.6 V

AT 6Unpowered, ADC reset asserted or unconfigured –0.3 to 15.5 –0.3 to 14.5 V

Analog input (+16 V, +4 V prescaler range) –0.3 to 15.5 –0.3 to 14.5 V

Analog input (direct input to ADC) –0.3 to 3.6 –0.3 to 3.6 V

Digital input –0.3 to 15.5 –0.3 to 14.5 V

Notes:

1. The ranges given here are for power supplies only. The recommended input voltage ranges specific to each I/O

standard are given in Table 2-85 on page 2-157.

2. All parameters representing voltages are measured with respect to GND unless otherwise specified.

3. The programming temperature range supported is Tambient = 0°C to 85°C.

4. VPUMP can be left floating during normal operation (not programming mode).

5. Violating the VCC15A recommended voltage supply during an embedded flash program cycle can corrupt the page being

programmed.

6. The input voltage may overshoot by up to 500 mV above the Recommended Maximum (150 mV in Direct mode),

provided the duration of the overshoot is less than 50% of the operating lifetime of the device.

7. The AG pad should also conform to the limits as specified in Table 2-48 on page 2-114.

Fusion Family of Mixed Signal FPGAs

Revision 8 3-4

Table 3-3 • Input Resistance of Analog Pads

Pads Pad Configuration Prescaler Range Input Resistance to Ground

AV, AC Analog Input (direct input to ADC) – 2 k (typical)

– > 10 M

Analog Input (positive prescaler) +16 V to +2 V 1 M (typical)

+1 V to +0.125 V > 10 M

Analog Input (negative prescaler) –16 V to –2 V 1 M (typical)

–1 V to –0.125 V > 10 M

Digital input +16 V to +2 V 1 M (typical)

Current monitor +16 V to +2 V 1 M (typical)

–16 V to –2 V 1 M (typical)

AT Analog Input (direct input to ADC) – 1 M (typical)

Analog Input (positive prescaler) +16 V, +4 V 1 M (typical)

Digital input +16 V, +4 V 1 M (typical)

Temperature monitor +16 V, +4 V > 10 M

Table 3-4 • Overshoot and Undershoot Limits 1

VCCI

Average VCCI–GND Overshoot or Undershoot

Duration as a Percentage of Clock Cycle2

Maximum Overshoot/

Undershoot2

2.7 V or less 10% 1.4 V

5% 1.49 V

3.0 V 10% 1.1 V

5% 1.19 V

3.3 V 10% 0.79 V

5% 0.88 V

3.6 V 10% 0.45 V

5% 0.54 V

Notes:

1. Based on reliability requirements at a junction temperature of 85°C.

2. The duration is allowed at one cycle out of six clock cycle. If the overshoot/undershoot occurs at one out of two cycles,

the maximum overshoot/undershoot has to be reduced by 0.15 V.

DC and Power Characteristics

3-5 Revision 8

I/O Power-Up and Supply Voltage Thresholds for Power-On Reset

(Commercial and Industrial)

Sophisticated power-up management circuitry is designed into every Fusion device. These circuits

ensure easy transition from the powered off state to the powered up state of the device. The many

different supplies can power up in any sequence with minimized current spikes or surges. In addition, the

I/O will be in a known state through the power-up sequence. The basic principle is shown in Figure 3-1

on page 3-6.

There are five regions to consider during power-up.

Fusion I/Os are activated only if ALL of the following three conditions are met:

1. VCC and VCCI are above the minimum specified trip points (Figure 3-1).

2. VCCI > VCC – 0.75 V (typical).

3. Chip is in the operating mode.

VCCI Trip Point:

Ramping up: 0.6 V < trip_point_up < 1.2 V

Ramping down: 0.5 V < trip_point_down < 1.1 V

VCC Trip Point:

Ramping up: 0.6 V < trip_point_up < 1.1 V

Ramping down: 0.5 V < trip_point_down < 1 V

VCC and VCCI ramp-up trip points are about 100 mV higher than ramp-down trip points. This specifically

built-in hysteresis prevents undesirable power-up oscillations and current surges. Note the following:

• During programming, I/Os become tristated and weakly pulled up to VCCI.

• JTAG supply, PLL power supplies, and charge pump VPUMP supply have no influence on I/O

behavior.

Internal Power-Up Activation Sequence

1. Core

2. Input buffers

3. Output buffers, after 200 ns delay from input buffer activation

PLL Behavior at Brownout Condition

Microsemi recommends using monotonic power supplies or voltage regulators to ensure proper power-

up behavior. Power ramp-up should be monotonic at least until VCC and VCCPLX exceed brownout

activation levels. The VCC activation level is specified as 1.1 V worst-case (see Figure 3-1 on page 3-6

for more details).

When PLL power supply voltage and/or VCC levels drop below the VCC brownout levels

(0.75 V ± 0.25 V), the PLL output lock signal goes low and/or the output clock is lost.

Table 3-5 • FPGA Programming, Storage, and Operating Limits

Product

Grade

Storage

Temperature Element

Grade Programming

Cycles Retention

Commercial Min. TJ = 0°C FPGA/FlashROM 500 20 years

Max. TJ = 85°C Embedded Flash < 1,000 20 years

< 10,000 10 years

< 15,000 5 years

Industrial Min. TJ = –40°C FPGA/FlashROM 500 20 years

Max. TJ = 100°C Embedded Flash < 1,000 20 years

< 10,000 10 years

< 15,000 5 years

Fusion Family of Mixed Signal FPGAs

Revision 8 3-6

Figure 3-1 • I/O State as a Function of VCCI and VCC Voltage Levels

Region 1: I/O buffers are OFF

Region 2: I/O buffers are ON.

I/Os are functional (except differential inputs)

but slower because VCCI / VCC are below

specification. For the same reason, input

buffers do not meet VIH / VIL levels, and

output buffers do not meet VOH / VOL levels.

Min VCCI datasheet specification

voltage at a selected I/O

standard; i.e., 1.425 V or 1.7 V

or 2.3 V or 3.0 V

VCC

VCC = 1.425 V

Region 1: I/O Buffers are OFF

Activation trip point:

Va = 0.85 V ± 0.25 V

Deactivation trip point:

Vd = 0.75 V ± 0.25 V

Activation trip point:

Va = 0.9 V ±0.3 V

Deactivation trip point:

Vd = 0.8 V ± 0.3 V

VCC = 1.575 V

Region 5: I/O buffers are ON

and power supplies are within

specification.

I/Os meet the entire datasheet

and timer specifications for

speed, VIH / VIL, VOH VOL, etc.

Region 4: I/O

buffers are ON.

I/Os are functional

(except differential inputs)

but slower because VCCI is

below specification. For the

same reason, input buffers do not

meet VIH / VIL levels, and output

buffers do not meet VOH / VOL levels.

Where VT can be from 0.58 V to 0.9 V (typically 0.75 V)

VCC = VCCI + VT

VCCI

Region 3: I/O buffers are ON.

I/Os are functional; I/O DC

specifications are met,

but I/Os are slower because

the VCC is below specification

DC and Power Characteristics

3-7 Revision 8

Thermal Characteristics

Introduction

The temperature variable in the Microsemi Designer software refers to the junction temperature, not the

ambient, case, or board temperatures. This is an important distinction because dynamic and static power

consumption will cause the chip's junction temperature to be higher than the ambient, case, or board

temperatures. EQ 1 through EQ 3 give the relationship between thermal resistance, temperature

gradient, and power.

EQ 1

EQ 2

EQ 3

where

JA = Junction-to-air thermal resistance

JB = Junction-to-board thermal resistance

JC = Junction-to-case thermal resistance

TJ= Junction temperature

TA= Ambient temperature

TB= Board temperature (measured 1.0 mm away from the

package edge)

TC= Case temperature

P = Total power dissipated by the device

JA

TJA

–

------------------

JB

TJTB

–

-------------------

JC

TJTC

–

-------------------

Table 3-6 • Package Thermal Resistance

Product

JA

JC JB UnitsStill Air 1.0 m/s 2.5 m/s

AFS090-QN108 34.5 30.0 27.7 8.1 16.7 °C/W

AFS090-QN180 33.3 27.6 25.7 9.2 21.2 °C/W

AFS250-QN180 32.2 26.5 24.7 5.7 15.0 °C/W

AFS250-PQ208142.1 38.4 37 20.5 36.3 °C/W

AFS600-PQ208123.9 21.3 20.48 6.1 16.5 °C/W

AFS090-FG256 37.7 33.9 32.2 11.5 29.7 °C/W

AFS250-FG256 33.7 30.0 28.3 9.3 24.8 °C/W

AFS600-FG256 28.9 25.2 23.5 6.8 19.9 °C/W

AFS1500-FG256 23.3 19.6 18.0 4.3 14.2 °C/W

AFS600-FG484 21.8 18.2 16.7 7.7 16.8 °C/W

AFS1500-FG484 21.6 16.8 15.2 5.6 14.9 °C/W

AFS1500-FG676 TBD TBD TBD TBD TBD °C/W

1. The package PQ208 is discontinued.For more information, see PDN 1407: Specific Part / Package Combinations.

Fusion Family of Mixed Signal FPGAs

Revision 8 3-8

Theta-JA

Junction-to-ambient thermal resistance (JA) is determined under standard conditions specified by

JEDEC (JESD-51), but it has little relevance in actual performance of the product. It should be used with

caution but is useful for comparing the thermal performance of one package to another.

A sample calculation showing the maximum power dissipation allowed for the AFS600-FG484 package

under forced convection of 1.0 m/s and 75°C ambient temperature is as follows:

EQ 4

where

EQ 5

The power consumption of a device can be calculated using the Microsemi power calculator. The

device's power consumption must be lower than the calculated maximum power dissipation by the

package. If the power consumption is higher than the device's maximum allowable power dissipation, a

heat sink can be attached on top of the case, or the airflow inside the system must be increased.

Theta-JB

Junction-to-board thermal resistance (JB) measures the ability of the package to dissipate heat from the

surface of the chip to the PCB. As defined by the JEDEC (JESD-51) standard, the thermal resistance

from junction to board uses an isothermal ring cold plate zone concept. The ring cold plate is simply a

means to generate an isothermal boundary condition at the perimeter. The cold plate is mounted on a

JEDEC standard board with a minimum distance of 5.0 mm away from the package edge.

Theta-JC

Junction-to-case thermal resistance (JC) measures the ability of a device to dissipate heat from the

surface of the chip to the top or bottom surface of the package. It is applicable for packages used with

external heat sinks. Constant temperature is applied to the surface in consideration and acts as a

boundary condition. This only applies to situations where all or nearly all of the heat is dissipated through

the surface in consideration.

Calculation for Heat Sink

For example, in a design implemented in an AFS600-FG484 package with 2.5 m/s airflow, the power

consumption value using the power calculator is 3.00 W. The user-dependent Ta and Tj are given as

follows:

From the datasheet:

EQ 6

JA = 19.00°C/W (taken from Table 3-6 on page 3-7).

TA= 75.00°C

TJ= 100.00°C

TA= 70.00°C

JA = 17.00°C/W

JC = 8.28°C/W

Maximum Power Allowed TJ(MAX) TA(MAX)

–

JA

---------------------------------------------

Maximum Power Allowed 100.00°C 75.00°C–

19.00°C/W

---------------------------------------------------- 1.3 W==

PTJTA

–

JA

-------------------100°C 70°C–

17.00 W

------------------------------------1.76 W== =

DC and Power Characteristics

3-9 Revision 8

The 1.76 W power is less than the required 3.00 W. The design therefore requires a heat sink, or the

airflow where the device is mounted should be increased. The design's total junction-to-air thermal

resistance requirement can be estimated by EQ 7:

EQ 7

Determining the heat sink's thermal performance proceeds as follows:

EQ 8

where

EQ 9

A heat sink with a thermal resistance of 5.01°C/W or better should be used. Thermal resistance of heat

sinks is a function of airflow. The heat sink performance can be significantly improved with increased

airflow.

Carefully estimating thermal resistance is important in the long-term reliability of an Microsemi FPGA.

Design engineers should always correlate the power consumption of the device with the maximum

allowable power dissipation of the package selected for that device.

Note: The junction-to-air and junction-to-board thermal resistances are based on JEDEC standard

(JESD-51) and assumptions made in building the model. It may not be realized in actual application and

therefore should be used with a degree of caution. Junction-to-case thermal resistance assumes that all

power is dissipated through the case.

Temperature and Voltage Derating Factors

JA = 0.37°C/W

= Thermal resistance of the interface material between

the case and the heat sink, usually provided by the

thermal interface manufacturer

SA = Thermal resistance of the heat sink in °C/W

Table 3-7 • Temperature and Voltage Derating Factors for Timing Delays

(normalized to TJ = 70°C, Worst-Case VCC = 1.425 V)

Array Voltage

VCC (V)

Junction Temperature (°C)

–40°C 0°C 25°C 70°C 85°C 100°C

1.425 0.88 0.93 0.95 1.00 1.02 1.05

1.500 0.83 0.88 0.90 0.95 0.96 0.99

1.575 0.80 0.85 0.87 0.91 0.93 0.96

ja(total)

TJTA

–

-------------------100°C 70°C–

3.00 W

------------------------------------10.00°C/W== =

JA(TOTAL) JC CS SA

++=

SA JA(TOTAL) JC

–CS

–=

SA 13.33°C/W 8.28°C/W–0.37°C/W–5.01°C/W==

Fusion Family of Mixed Signal FPGAs

Revision 8 3-10

Calculating Power Dissipation

Quiescent Supply Current

Table 3-8 • AFS1500 Quiescent Supply Current Characteristics

Parameter Description Conditions Temp. Min. Typ. Max. Unit

ICC11.5 V quiescent current Operational standby4,

VCC = 1.575 V

TJ=25°C 20 40 mA

TJ=85°C 32 65 mA

TJ= 100°C 59 120 mA

Standby mode5 or Sleep mode6,

VCC = 0 V

00µA

ICC3323.3 V analog supplies

current

Operational standby4,

VCC33 = 3.63 V

TJ=25°C 9.8 13 mA

TJ= 85°C 10.7 14 mA

TJ= 100°C 10.8 15 mA

Operational standby, only Analog

Quad and –3.3 V output ON,

VCC33 = 3.63 V

TJ=25°C 0.31 2 mA

TJ=85°C 0.35 2 mA

TJ= 100°C 0.45 2 mA

Standby mode5, VCC33 = 3.63 V TJ= 25°C 2.9 3.6 mA

TJ=85°C 2.9 4 mA

TJ= 100°C 3.3 6 mA

Sleep mode6, VCC33 = 3.63 V TJ=25°C 17 19 µA

TJ=85°C 18 20 µA

TJ= 100°C 24 25 µA

ICCI3I/O quiescent current Operational standby4,

Standby mode, and Sleep Mode6,

VCCIx = 3.63 V

TJ= 25°C 417 649 µA

TJ= 85°C 417 649 µA

TJ= 100°C 417 649 µA

Notes:

1. ICC is the 1.5 V power supplies, ICC and ICC15A.

2. ICC33A includes ICC33A, ICC33PMP, and ICCOSC.

3. ICCI includes all ICCI0, ICCI1, ICCI2, and ICCI4.

4. Operational standby is when the Fusion device is powered up, all blocks are used, no I/O is toggling, Voltage Regulator is

loaded with 200 mA, VCC33PMP is ON, XTAL is ON, and ADC is ON.

5. XTAL is configured as high gain, VCC = VJTAG = VPUMP = 0 V.

6. Sleep Mode, VCC = VJTAG = VPUMP = 0 V.

DC and Power Characteristics

3-11 Revision 8

IJTAG JTAG I/O quiescent

current

Operational standby4,

VJTAG = 3.63 V

TJ= 25°C 80 100 µA

TJ= 85°C 80 100 µA

TJ= 100°C 80 100 µA

Standby mode5 or Sleep mode6,

VJTAG = 0 V

00µA

IPP Programming supply

current

Non-programming mode,

VPUMP = 3.63 V

TJ=25°C 39 80 µA

TJ=85°C 40 80 µA

TJ= 100°C 40 80 µA

Standby mode5 or Sleep mode6,

VPUMP = 0 V

00µA

ICCNVM Embedded NVM

current

Reset asserted, VCCNVM = 1.575 V TJ= 25°C 50 150 µA

TJ=85°C 50 150 µA

TJ= 100°C 50 150 µA

ICCPLL 1.5 V PLL quiescent

current

Operational standby

, VCCPLL = 1.575 V

TJ= 25°C 130 200 µA

TJ= 85°C 130 200 µA

TJ= 100°C 130 200 µA

Table 3-8 • AFS1500 Quiescent Supply Current Characteristics (continued)

Parameter Description Conditions Temp. Min. Typ. Max. Unit

Notes:

1. ICC is the 1.5 V power supplies, ICC and ICC15A.

2. ICC33A includes ICC33A, ICC33PMP, and ICCOSC.

3. ICCI includes all ICCI0, ICCI1, ICCI2, and ICCI4.

4. Operational standby is when the Fusion device is powered up, all blocks are used, no I/O is toggling, Voltage Regulator is

loaded with 200 mA, VCC33PMP is ON, XTAL is ON, and ADC is ON.

5. XTAL is configured as high gain, VCC = VJTAG = VPUMP = 0 V.

6. Sleep Mode, VCC = VJTAG = VPUMP = 0 V.

Fusion Family of Mixed Signal FPGAs

Revision 8 3-12

Table 3-9 • AFS600 Quiescent Supply Current Characteristics

Parameter Description Conditions Temp. Min Typ Max Unit

ICC11.5 V quiescent current Operational standby4,

VCC = 1.575 V

TJ=25°C 13 25 mA

TJ=85°C 20 45 mA

TJ=100°C 25 75 mA

Standby mode5 or Sleep

mode6, VCC = 0 V

00µA

ICC3323.3 V analog supplies

current

Operational standby4,

VCC33 = 3.63 V

TJ= 25°C 9.8 13 mA

TJ= 85°C 10.7 14 mA

TJ= 100°C 10.8 15 mA

Operational standby,

only Analog Quad and –3.3 V

output ON, VCC33 = 3.63 V

TJ=25°C 0.31 2 mA

TJ=85°C 0.35 2 mA

TJ= 100°C 0.45 2 mA

Standby mode5,

VCC33 = 3.63 V

TJ= 25°C 2.8 3.6 mA

TJ=85°C 2.9 4 mA

TJ= 100°C 3.5 6 mA

Sleep mode6, VCC33 = 3.63 V TJ=25°C 17 19 µA

TJ=85°C 18 20 µA

TJ= 100°C 24 25 µA

ICCI3I/O quiescent current Operational standby4,

VCCIx = 3.63 V

TJ= 25°C 417 648 µA

TJ= 85°C 417 648 µA

TJ= 100°C 417 649 µA

IJTAG JTAG I/O quiescent current Operational standby4,

VJTAG = 3.63 V

TJ= 25°C 80 100 µA

TJ= 85°C 80 100 µA

TJ= 100°C 80 100 µA

Standby mode5 or Sleep

mode6, VJTAG = 0 V

00µA

Notes:

1. ICC is the 1.5 V power supplies, ICC and ICC15A.

2. ICC33A includes ICC33A, ICC33PMP, and ICCOSC.

3. ICCI includes all ICCI0, ICCI1, ICCI2, and ICCI4.

4. Operational standby is when the Fusion device is powered up, all blocks are used, no I/O is toggling, Voltage Regulator is

loaded with 200 mA, VCC33PMP is ON, XTAL is ON, and ADC is ON.

5. XTAL is configured as high gain, VCC = VJTAG = VPUMP = 0 V.

6. Sleep Mode, VCC = VJTAG = VPUMP = 0 V.

DC and Power Characteristics

3-13 Revision 8

IPP Programming supply

current

Non-programming mode,

VPUMP = 3.63 V

TJ=25°C 36 80 µA

TJ=85°C 36 80 µA

TJ= 100°C 36 80 µA

Standby mode5 or Sleep

mode6, VPUMP = 0 V

00µA

ICCNVM Embedded NVM current Reset asserted,

VCCNVM = 1.575 V

TJ=25°C 22 80 µA

TJ=85°C 24 80 µA

TJ= 100°C 25 80 µA

ICCPLL 1.5 V PLL quiescent current Operational standby,

VCCPLL = 1.575 V

TJ= 25°C 130 200 µA

TJ= 85°C 130 200 µA

TJ= 100°C 130 200 µA

Table 3-9 • AFS600 Quiescent Supply Current Characteristics (continued)

Parameter Description Conditions Temp. Min Typ Max Unit

Notes:

1. ICC is the 1.5 V power supplies, ICC and ICC15A.

2. ICC33A includes ICC33A, ICC33PMP, and ICCOSC.

3. ICCI includes all ICCI0, ICCI1, ICCI2, and ICCI4.

4. Operational standby is when the Fusion device is powered up, all blocks are used, no I/O is toggling, Voltage Regulator is

loaded with 200 mA, VCC33PMP is ON, XTAL is ON, and ADC is ON.

5. XTAL is configured as high gain, VCC = VJTAG = VPUMP = 0 V.

6. Sleep Mode, VCC = VJTAG = VPUMP = 0 V.

Fusion Family of Mixed Signal FPGAs

Revision 8 3-14

Table 3-10 • AFS250 Quiescent Supply Current Characteristics

Parameter Description Conditions Temp. Min Typ Max Unit

ICC11.5 V quiescent current Operational standby4,

VCC = 1.575 V

TJ= 25°C 4.8 10 mA

TJ= 85°C 8.2 30 mA

TJ= 100°C 15 50 mA

Standby mode5 or Sleep

mode6, VCC = 0 V

00µA

ICC3323.3 V analog supplies

current

Operational standby4,

VCC33 = 3.63 V

TJ= 25°C 9.8 13 mA

TJ= 85°C 9.8 14 mA

TJ= 100°C 10.8 15 mA

Operational standby, only

Analog Quad and –3.3 V

output ON, VCC33 = 3.63 V

TJ=25°C 0.29 2 mA

TJ=85°C 0.31 2 mA

TJ= 100°C 0.45 2 mA

Standby mode5, VCC33 = 3.63V TJ= 25°C 2.9 3.0 mA

TJ= 85°C 2.9 3.1 mA

TJ= 100°C 3.5 6 mA

Sleep mode6, VCC33 = 3.63 V TJ=25°C 19 18 µA

TJ=85°C 19 20 µA

TJ= 100°C 24 25 µA

ICCI3I/O quiescent current Operational standby6,

VCCIx = 3.63 V

TJ= 25°C 266 437 µA

TJ= 85°C 266 437 µA

TJ= 100°C 266 437 µA

IJTAG JTAG I/O quiescent current Operational standby4,

VJTAG = 3.63 V

TJ= 25°C 80 100 µA

TJ= 85°C 80 100 µA

TJ= 100°C 80 100 µA

Standby mode5 or Sleep

mode6, VJTAG = 0 V

00µA

Notes:

1. ICC is the 1.5 V power supplies, ICC, ICCPLL, ICC15A, ICCNVM.

2. ICC33A includes ICC33A, ICC33PMP, and ICCOSC.

3. ICCI includes all ICCI0, ICCI1, and ICCI2.

4. Operational standby is when the Fusion device is powered up, all blocks are used, no I/O is toggling, Voltage Regulator is

loaded with 200 mA, VCC33PMP is ON, XTAL is ON, and ADC is ON.

5. XTAL is configured as high gain, VCC = VJTAG = VPUMP = 0 V.

6. Sleep Mode, VCC = VJTA G = VPUMP = 0 V.

DC and Power Characteristics

3-15 Revision 8

IPP Programming supply

current

Non-programming mode,

VPUMP = 3.63 V

TJ=25°C 37 80 µA

TJ=85°C 37 80 µA

TJ= 100°C 80 100 µA

Standby mode5 or Sleep

mode6, VPUMP = 0 V

00µA

ICCNVM Embedded NVM current Reset asserted,

VCCNVM = 1.575 V

TJ=25°C 10 40 µA

TJ=85°C 14 40 µA

TJ= 100°C 14 40 µA

ICCPLL 1.5 V PLL quiescent current Operational standby,

VCCPLL = 1.575 V

TJ= 25°C 65 100 µA

TJ= 85°C 65 100 µA

TJ= 100°C 65 100 µA

Table 3-10 • AFS250 Quiescent Supply Current Characteristics (continued)

Parameter Description Conditions Temp. Min Typ Max Unit

Notes:

1. ICC is the 1.5 V power supplies, ICC, ICCPLL, ICC15A, ICCNVM.

2. ICC33A includes ICC33A, ICC33PMP, and ICCOSC.

3. ICCI includes all ICCI0, ICCI1, and ICCI2.

4. Operational standby is when the Fusion device is powered up, all blocks are used, no I/O is toggling, Voltage Regulator is

loaded with 200 mA, VCC33PMP is ON, XTAL is ON, and ADC is ON.

5. XTAL is configured as high gain, VCC = VJTAG = VPUMP = 0 V.

6. Sleep Mode, VCC = VJTA G = VPUMP = 0 V.

Fusion Family of Mixed Signal FPGAs

Revision 8 3-16

Table 3-11 • AFS090 Quiescent Supply Current Characteristics

Parameter Description Conditions Temp. Min Typ Max Unit

ICC11.5 V quiescent current Operational standby4,

VCC = 1.575 V

TJ= 25°C 5 7.5 mA

TJ= 85°C 6.5 20 mA

TJ= 100°C 14 48 mA

Standby mode5 or Sleep

mode6, VCC = 0 V

00µA

ICC3323.3 V analog supplies

current

Operational standby4,

VCC33 = 3.63 V

TJ= 25°C 9.8 12 mA

TJ= 85°C 9.8 12 mA

TJ= 100°C 10.7 15 mA

Operational standby, only

Analog Quad and –3.3 V

output ON, VCC33 = 3.63 V

TJ=25°C 0.30 2 mA

TJ=85°C 0.30 2 mA

TJ= 100°C 0.45 2 mA

Standby mode5,

VCC33 = 3.63 V

TJ= 25°C 2.9 2.9 mA

TJ= 85°C 2.9 3.0 mA

TJ= 100°C 3.5 6 mA

Sleep mode6, VCC33 = 3.63 V TJ= 25°C 17 18 µA

TJ=85°C 18 20 µA

TJ= 100°C 24 25 µA

ICCI3I/O quiescent current Operational standby6,

VCCIx = 3.63 V

TJ= 25°C 260 437 µA

TJ= 85°C 260 437 µA

TJ= 100°C 260 437 µA

IJTAG JTAG I/O quiescent current Operational standby4,

VJTAG = 3.63 V

TJ= 25°C 80 100 µA

TJ= 85°C 80 100 µA

TJ= 100°C 80 100 µA

Standby mode5 or Sleep

mode6, VJTAG = 0 V

00µA

IPP Programming supply

current

Non-programming mode,

VPUMP = 3.63 V

TJ=25°C 37 80 µA

TJ=85°C 37 80 µA

TJ= 100°C 80 100 µA

Standby mode5 or Sleep

mode6, VPUMP = 0 V

00µA

Notes:

1. ICC is the 1.5 V power supplies, ICC, ICCPLL, ICC15A, ICCNVM.

2. ICC33A includes ICC33A, ICC33PMP, and ICCOSC.

3. ICCI includes all ICCI0, ICCI1, and ICCI2.

4. Operational standby is when the Fusion device is powered up, all blocks are used, no I/O is toggling, Voltage Regulator is

loaded with 200 mA, VCC33PMP is ON, XTAL is ON, and ADC is ON.

5. XTAL is configured as high gain, VCC = VJTAG = VPUMP = 0 V.

6. Sleep Mode, VCC = VJTAG = VPUMP = 0 V.

DC and Power Characteristics

3-17 Revision 8

ICCNVM Embedded NVM current Reset asserted,

VCCNVM = 1.575 V

TJ=25°C 10 40 µA

TJ=85°C 14 40 µA

TJ= 100°C 14 40 µA

ICCPLL 1.5 V PLL quiescent current Operational standby,

VCCPLL = 1.575 V

TJ= 25°C 65 100 µA

TJ= 85°C 65 100 µA

TJ= 100°C 65 100 µA

Table 3-11 • AFS090 Quiescent Supply Current Characteristics (continued)

Parameter Description Conditions Temp. Min Typ Max Unit

Notes:

1. ICC is the 1.5 V power supplies, ICC, ICCPLL, ICC15A, ICCNVM.

2. ICC33A includes ICC33A, ICC33PMP, and ICCOSC.

3. ICCI includes all ICCI0, ICCI1, and ICCI2.

4. Operational standby is when the Fusion device is powered up, all blocks are used, no I/O is toggling, Voltage Regulator is

loaded with 200 mA, VCC33PMP is ON, XTAL is ON, and ADC is ON.

5. XTAL is configured as high gain, VCC = VJTAG = VPUMP = 0 V.

6. Sleep Mode, VCC = VJTAG = VPUMP = 0 V.

Fusion Family of Mixed Signal FPGAs

Revision 8 3-18

Power per I/O Pin

Table 3-12 • Summary of I/O Input Buffer Power (per pin)—Default I/O Software Settings

VCCI (V)

Static Power

PDC7 (mW)1

Dynamic Power

PAC9 (µW/MHz)2

Applicable to Pro I/O Banks

Single-Ended

3.3 V LVTTL/LVCMOS 3.3 – 17.39

3.3 V LVTTL/LVCMOS – Schmitt trigger 3.3 – 25.51

2.5 V LVCMOS 2.5 – 5.76

2.5 V LVCMOS – Schmitt trigger 2.5 – 7.16

1.8 V LVCMOS 1.8 – 2.72

1.8 V LVCMOS – Schmitt trigger 1.8 – 2.80

1.5 V LVCMOS (JESD8-11) 1.5 – 2.08

1.5 V LVCMOS (JESD8-11) – Schmitt trigger 1.5 – 2.00

3.3 V PCI 3.3 – 18.82

3.3 V PCI – Schmitt trigger 3.3 – 20.12

3.3 V PCI-X 3.3 – 18.82

3.3 V PCI-X – Schmitt trigger 3.3 – 20.12

Voltage-Referenced

3.3 V GTL 3.3 2.90 8.23

2.5 V GTL 2.5 2.13 4.78

3.3 V GTL+ 3.3 2.81 4.14

2.5 V GTL+ 2.5 2.57 3.71

HSTL (I) 1.5 0.17 2.03

HSTL (II) 1.5 0.17 2.03

SSTL2 (I) 2.5 1.38 4.48

SSTL2 (II) 2.5 1.38 4.48

SSTL3 (I) 3.3 3.21 9.26

SSTL3 (II) 3.3 3.21 9.26

Differential

LVDS 2.5 2.26 1.50

LVPECL 3.3 5.71 2.17

Notes:

1. PDC7 is the static power (where applicable) measured on VCCI.

2. PAC9 is the total dynamic power measured on VCC and VCCI.

DC and Power Characteristics

3-19 Revision 8

Applicable to Advanced I/O Banks

Single-Ended

3.3 V LVTTL/LVCMOS 3.3 – 16.69

2.5 V LVCMOS 2.5 – 5.12

1.8 V LVCMOS 1.8 – 2.13

1.5 V LVCMOS (JESD8-11) 1.5 – 1.45

3.3 V PCI 3.3 – 18.11

3.3 V PCI-X 3.3 – 18.11

Differential

LVDS 2.5 2.26 1.20

LVPECL 3.3 5.72 1.87

Applicable to Standard I/O Banks

3.3 V LVTTL/LVCMOS 3.3 – 16.79

2.5 V LVCMOS 2.5 – 5.19

1.8 V LVCMOS 1.8 – 2.18

1.5 V LVCMOS (JESD8-11) 1.5 – 1.52

Table 3-12 • Summary of I/O Input Buffer Power (per pin)—Default I/O Software Settings (continued)

VCCI (V)

Static Power

PDC7 (mW)1

Dynamic Power

PAC9 (µW/MHz)2

Notes:

1. PDC7 is the static power (where applicable) measured on VCCI.

2. PAC9 is the total dynamic power measured on VCC and VCCI.

Fusion Family of Mixed Signal FPGAs

Revision 8 3-20

Table 3-13 • Summary of I/O Output Buffer Power (per pin)—Default I/O Software Settings1

CLOAD (pF) VCCI (V)

Static Power

PDC8 (mW)2

Dynamic Power

PAC10 (µW/MHz)3

Applicable to Pro I/O Banks

Single-Ended

3.3 V LVTTL/LVCMOS 35 3.3 – 474.70

2.5 V LVCMOS 35 2.5 – 270.73

1.8 V LVCMOS 35 1.8 – 151.78

1.5 V LVCMOS (JESD8-11) 35 1.5 – 104.55

3.3 V PCI 10 3.3 – 204.61

3.3 V PCI-X 10 3.3 – 204.61

Voltage-Referenced

3.3 V GTL 10 3.3 – 24.08

2.5 V GTL 10 2.5 – 13.52

3.3 V GTL+ 10 3.3 – 24.10

2.5 V GTL+ 10 2.5 – 13.54

HSTL (I) 20 1.5 7.08 26.22

HSTL (II) 20 1.5 13.88 27.22

SSTL2 (I) 30 2.5 16.69 105.56

SSTL2 (II) 30 2.5 25.91 116.60

SSTL3 (I) 30 3.3 26.02 114.87

SSTL3 (II) 30 3.3 42.21 131.76

Differential

LVDS – 2.5 7.70 89.62

LVPECL – 3.3 19.42 168.02

Applicable to Advanced I/O Banks

Single-Ended

3.3 V LVTTL / 3.3 V LVCMOS 35 3.3 – 468.67

2.5 V LVCMOS 35 2.5 – 267.48

1.8 V LVCMOS 35 1.8 – 149.46

1.5 V LVCMOS (JESD8-11) 35 1.5 – 103.12

3.3 V PCI 10 3.3 – 201.02

3.3 V PCI-X 10 3.3 – 201.02

Notes:

1. Dynamic power consumption is given for standard load and software-default drive strength and output slew.

2. PDC8 is the static power (where applicable) measured on VCCI.

3. PAC10 is the total dynamic power measured on VCC and VCCI.

DC and Power Characteristics

3-21 Revision 8

Differential

LVDS – 2.5 7.74 88.92

LVPECL – 3.3 19.54 166.52

Applicable to Standard I/O Banks

Single-Ended

3.3 V LVTTL / 3.3 V LVCMOS 35 3.3 – 431.08

2.5 V LVCMOS 35 2.5 – 247.36

1.8 V LVCMOS 35 1.8 – 128.46

1.5 V LVCMOS (JESD8-11) 35 1.5 – 89.46

Table 3-13 • Summary of I/O Output Buffer Power (per pin)—Default I/O Software Settings1 (continued)

CLOAD (pF) VCCI (V)

Static Power

PDC8 (mW)2

Dynamic Power

PAC10 (µW/MHz)3

Notes:

1. Dynamic power consumption is given for standard load and software-default drive strength and output slew.

2. PDC8 is the static power (where applicable) measured on VCCI.

3. PAC10 is the total dynamic power measured on VCC and VCCI.

Fusion Family of Mixed Signal FPGAs

Revision 8 3-22

Dynamic Power Consumption of Various Internal Resources

Table 3-14 • Different Components Contributing to the Dynamic Power Consumption in Fusion Devices

Parameter Definition

Power Supply

Device-Specific

Dynamic Contributions

UnitsName Setting AFS1500 AFS600 AFS250 AFS090

PAC1 Clock contribution of a Global

Rib

VCC 1.5 V 14.5 12.8 11 11 µW/MHz

PAC2 Clock contribution of a Global

Spine

VCC 1.5 V 2.5 1.9 1.6 0.8 µW/MHz

PAC3 Clock contribution of a VersaTile

row

VCC 1.5 V 0.81 µW/MHz

PAC4 Clock contribution of a VersaTile

used as a sequential module

VCC 1.5 V 0.11 µW/MHz

PAC5 First contribution of a VersaTile

used as a sequential module

VCC 1.5 V 0.07 µW/MHz

PAC6 Second contribution of a

VersaTile used as a sequential

module

VCC 1.5 V 0.29 µW/MHz

PAC7 Contribution of a VersaTile used

as a combinatorial module

VCC 1.5 V 0.29 µW/MHz

PAC8 Average contribution of a routing

net

VCC 1.5 V 0.70 µW/MHz

PAC9 Contribution of an I/O input pin

(standard dependent)

VCCI See Table 3-12 on page 3-18

PAC10 Contribution of an I/O output pin

(standard dependent)

VCCI See Table 3-13 on page 3-20

PAC11 Average contribution of a RAM

block during a read operation

VCC 1.5 V 25 µW/MHz

PAC12 Average contribution of a RAM

block during a write operation

VCC 1.5 V 30 µW/MHz

PAC13 Dynamic Contribution for PLL VCC 1.5 V 2.6 µW/MHz

PAC15 Contribution of NVM block during

a read operation (F < 33MHz)

VCC 1.5 V 358 µW/MHz

PAC16 1st contribution of NVM block

during a read operation (F > 33

MHz)

VCC 1.5 V 12.88 mW

PAC17 2nd contribution of NVM block

during a read operation (F > 33

MHz)

VCC 1.5 V 4.8 µW/MHz

PAC18 Crystal Oscillator contribution VCC33A 3.3 V 0.63 mW

PAC19 RC Oscillator contribution VCC33A 3.3 V 3.3 mW

PAC20 Analog Block dynamic power

contribution of ADC

VCC 1.5 V 3 mW

DC and Power Characteristics

3-23 Revision 8

Static Power Consumption of Various Internal Resources

Power Calculation Methodology

This section describes a simplified method to estimate power consumption of an application. For more

accurate and detailed power estimations, use the SmartPower tool in the Libero SoC software.

The power calculation methodology described below uses the following variables:

• The number of PLLs as well as the number and the frequency of each output clock generated

• The number of combinatorial and sequential cells used in the design

• The internal clock frequencies

• The number and the standard of I/O pins used in the design

• The number of RAM blocks used in the design

• The number of NVM blocks used in the design

• The number of Analog Quads used in the design

• Toggle rates of I/O pins as well as VersaTiles—guidelines are provided in Ta b l e 3- 1 6 on

page 3-27.

• Enable rates of output buffers—guidelines are provided for typical applications in Table 3-17 on

page 3-27.

• Read rate and write rate to the RAM—guidelines are provided for typical applications in

Table 3-17 on page 3-27.

• Read rate to the NVM blocks

The calculation should be repeated for each clock domain defined in the design.

Table 3-15 • Different Components Contributing to the Static Power Consumption in Fusion Devices

Parameter Definition

Power

Supply

Device-Specific Static Contributions

UnitsAFS1500 AFS600 AFS250 AFS090

PDC1 Core static power contribution in

operating mode

VCC 1.5 V 18 7.5 4.50 3.00 mW

PDC2 Device static power contribution in

standby mode

VCC33A 3.3 V 0.66 mW

PDC3 Device static power contribution in

sleep mode

VCC33A 3.3 V 0.03 mW

PDC4 NVM static power contribution VCC 1.5 V 1.19 mW

PDC5 Analog Block static power

contribution of ADC

VCC33A 3.3 V 8.25 mW

PDC6 Analog Block static power

contribution per Quad

VCC33A 3.3 V 3.3 mW

PDC7 Static contribution per input pin –

standard dependent contribution

VCCI See Table 3-12 on page 3-18

PDC8 Static contribution per input pin –

standard dependent contribution

VCCI See Table 3-13 on page 3-20

PDC9 Static contribution for PLL VCC 1.5 V 2.55 mW

Fusion Family of Mixed Signal FPGAs

Revision 8 3-24

Methodology

Total Power Consumption—PTOTAL

Operating Mode, Standby Mode, and Sleep Mode

PTOTAL = PSTAT + PDYN

PSTAT is the total static power consumption.

PDYN is the total dynamic power consumption.

Total Static Power Consumption—PSTAT

Operating Mode

PSTAT = PDC1 + (NNVM-BLOCKS * PDC4) + PDC5+ (NQUADS * PDC6) + (NINPUTS * PDC7) +

(NOUTPUTS * PDC8) + (NPLLS * PDC9)

NNVM-BLOCKS is the number of NVM blocks available in the device.

NQUADS is the number of Analog Quads used in the design.

NINPUTS is the number of I/O input buffers used in the design.

NOUTPUTS is the number of I/O output buffers used in the design.

NPLLS is the number of PLLs available in the device.

Standby Mode

PSTAT = PDC2

Sleep Mode

PSTAT = PDC3

Total Dynamic Power Consumption—PDYN

Operating Mode

PDYN = PCLOCK + PS-CELL + PC-CELL + PNET + PINPUTS + POUTPUTS + PMEMORY + PPLL + PNVM+

PXTL-OSC + PRC-OSC + PAB

Standby Mode

PDYN = PXTL-OSC

Sleep Mode

PDYN = 0 W

Global Clock Dynamic Contribution—PCLOCK

Operating Mode

PCLOCK = (PAC1 + NSPINE * PAC2 + NROW * PAC3 + NS-CELL * PAC4) * FCLK

NSPINE is the number of global spines used in the user design—guidelines are provided in the

“Spine Architecture” section of the Global Resources chapter in the Fusion and Extended

Temperature Fusion FPGA Fabric User's Guide.

NROW is the number of VersaTile rows used in the design—guidelines are provided in the “Spine

Architecture” section of the Global Resources chapter in the Fusion and Extended Temperature

Fusion FPGA Fabric User's Guide.

FCLK is the global clock signal frequency.

NS-CELL is the number of VersaTiles used as sequential modules in the design.

Standby Mode and Sleep Mode

PCLOCK = 0 W

Sequential Cells Dynamic Contribution—PS-CELL

Operating Mode

DC and Power Characteristics

3-25 Revision 8

PS-CELL = NS-CELL * (PAC5 + (1 / 2) * PAC6) * FCLK

NS-CELL is the number of VersaTiles used as sequential modules in the design. When a multi-tile

sequential cell is used, it should be accounted for as 1.

1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 3-16 on page 3-27.

FCLK is the global clock signal frequency.

Standby Mode and Sleep Mode

PS-CELL = 0 W

Combinatorial Cells Dynamic Contribution—PC-CELL

Operating Mode

PC-CELL = NC-CELL* (1 / 2) * PAC7 * FCLK

NC-CELL is the number of VersaTiles used as combinatorial modules in the design.

1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 3-16 on page 3-27.

FCLK is the global clock signal frequency.

Standby Mode and Sleep Mode

PC-CELL = 0 W

Routing Net Dynamic Contribution—PNET

Operating Mode

PNET = (NS-CELL + NC-CELL) * (1 / 2) * PAC8 * FCLK

NS-CELL is the number VersaTiles used as sequential modules in the design.

NC-CELL is the number of VersaTiles used as combinatorial modules in the design.

1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 3-16 on page 3-27.

FCLK is the global clock signal frequency.

Standby Mode and Sleep Mode

PNET = 0 W

I/O Input Buffer Dynamic Contribution—PINPUTS

Operating Mode

PINPUTS = NINPUTS * (2 / 2) * PAC9 * FCLK

NINPUTS is the number of I/O input buffers used in the design.

2 is the I/O buffer toggle rate—guidelines are provided in Table 3-16 on page 3-27.

FCLK is the global clock signal frequency.

Standby Mode and Sleep Mode

PINPUTS = 0 W

I/O Output Buffer Dynamic Contribution—POUTPUTS

Operating Mode

POUTPUTS = NOUTPUTS * (2 / 2) * 1 * PAC10 * FCLK

NOUTPUTS is the number of I/O output buffers used in the design.

2 is the I/O buffer toggle rate—guidelines are provided in Table 3-16 on page 3-27.

1 is the I/O buffer enable rate—guidelines are provided in Table 3-17 on page 3-27.

FCLK is the global clock signal frequency.

Standby Mode and Sleep Mode

POUTPUTS = 0 W

Fusion Family of Mixed Signal FPGAs

Revision 8 3-26

RAM Dynamic Contribution—PMEMORY

Operating Mode

PMEMORY = (NBLOCKS * PAC11 * 2 * FREAD-CLOCK) + (NBLOCKS * PAC12 * 3 * FWRITE-CLOCK)

NBLOCKS is the number of RAM blocks used in the design.

FREAD-CLOCK is the memory read clock frequency.

2 is the RAM enable rate for read operations—guidelines are provided in Table 3-17 on

page 3-27.

3 the RAM enable rate for write operations—guidelines are provided in Table 3-17 on page 3-27.

FWRITE-CLOCK is the memory write clock frequency.

Standby Mode and Sleep Mode

PMEMORY = 0 W

PLL/CCC Dynamic Contribution—PPLL

Operating Mode

PPLL = PAC13 * FCLKOUT

FCLKIN is the input clock frequency.

FCLKOUT is the output clock frequency.1

Standby Mode and Sleep Mode

PPLL = 0 W

Nonvolatile Memory Dynamic Contribution—PNVM

Operating Mode

The NVM dynamic power consumption is a piecewise linear function of frequency.

PNVM = NNVM-BLOCKS * 4 * PAC15 * FREAD-NVM when FREAD-NVM 33 MHz,

PNVM = NNVM-BLOCKS * 4 *(PAC16 + PAC17 * FREAD-NVM when FREAD-NVM > 33 MHz

NNVM-BLOCKS is the number of NVM blocks used in the design (2 inAFS600).

4 is the NVM enable rate for read operations. Default is 0 (NVM mainly in idle state).

FREAD-NVM is the NVM read clock frequency.

Standby Mode and Sleep Mode

PNVM = 0 W

Crystal Oscillator Dynamic Contribution—PXTL-OSC

Operating Mode

PXTL-OSC = PAC18

Standby Mode

PXTL-OSC = PAC18

Sleep Mode

PXTL-OSC = 0 W

1. The PLL dynamic contribution depends on the input clock frequency, the number of output clock signals generated by the

PLL, and the frequency of each output clock. If a PLL is used to generate more than one output clock, include each output

clock in the formula output clock by adding its corresponding contribution (PAC14 * FCLKOUT product) to the total PLL

contribution.

DC and Power Characteristics

3-27 Revision 8

RC Oscillator Dynamic Contribution—PRC-OSC

Operating Mode

PRC-OSC = PAC19

Standby Mode and Sleep Mode

PRC-OSC = 0 W

Analog System Dynamic Contribution—PAB

Operating Mode

PAB = PAC20

Standby Mode and Sleep Mode

PAB = 0 W

Guidelines

Toggle Rate Definition

A toggle rate defines the frequency of a net or logic element relative to a clock. It is a percentage. If the

toggle rate of a net is 100%, this means that the net switches at half the clock frequency. Below are some

examples:

• The average toggle rate of a shift register is 100%, as all flip-flop outputs toggle at half of the clock

frequency.

• The average toggle rate of an 8-bit counter is 25%:

– Bit 0 (LSB) = 100%

– Bit 1 = 50%

– Bit 2 = 25%

–…

– Bit 7 (MSB) = 0.78125%

– Average toggle rate = (100% + 50% + 25% + 12.5% +. . . 0.78125%) / 8.

Enable Rate Definition

Output enable rate is the average percentage of time during which tristate outputs are enabled. When

non-tristate output buffers are used, the enable rate should be 100%.

Table 3-16 • Toggle Rate Guidelines Recommended for Power Calculation

Component Definition Guideline

1 Toggle rate of VersaTile outputs 10%

2 I/O buffer toggle rate 10%

Table 3-17 • Enable Rate Guidelines Recommended for Power Calculation

Component Definition Guideline

1 I/O output buffer enable rate 100%

2 RAM enable rate for read operations 12.5%

3RAM enable rate for write operations 12.5%

4 NVM enable rate for read operations 0%

Fusion Family of Mixed Signal FPGAs

Revision 8 3-28

Example of Power Calculation

This example considers a shift register with 5,000 storage tiles, including a counter and memory that

stores analog information. The shift register is clocked at 50 MHz and stores and reads information from

a RAM.

The device used is a commercial AFS600 device operating in typical conditions.

The calculation below uses the power calculation methodology previously presented and shows how to

determine the dynamic and static power consumption of resources used in the application.

Also included in the example is the calculation of power consumption in operating, standby, and sleep

modes to illustrate the benefit of power-saving modes.

Global Clock Contribution—PCLOCK

FCLK = 50 MHz

Number of sequential VersaTiles: NS-CELL = 5,000

Estimated number of Spines: NSPINES = 5

Estimated number of Rows: NROW = 313

Operating Mode

PCLOCK = (PAC1 + NSPINE * PAC2 + NROW * PAC3 + NS-CELL * PAC4) * FCLK

PCLOCK = (0.0128 + 5 * 0.0019 + 313 * 0.00081 + 5,000 * 0.00011) * 50

PCLOCK = 41.28 mW

Standby Mode and Sleep Mode

PCLOCK = 0 W

Logic—Sequential Cells, Combinational Cells, and Routing Net Contributions—PS-CELL,

PC-CELL, and PNET

FCLK = 50 MHz

Number of sequential VersaTiles: NS-CELL = 5,000

Number of combinatorial VersaTiles: NC-CELL = 6,000

Estimated toggle rate of VersaTile outputs: 1 = 0.1 (10%)

Operating Mode

PS-CELL = NS-CELL * (PAC5+ (1 / 2) * PAC6) * FCLK

PS-CELL = 5,000 * (0.00007 + (0.1 / 2) * 0.00029) * 50

PS-CELL = 21.13 mW

PC-CELL = NC-CELL* (1 / 2) * PAC7 * FCLK

PC-CELL = 6,000 * (0.1 / 2) * 0.00029 * 50

PC-CELL = 4.35 mW

PNET = (NS-CELL + NC-CELL) * (1 / 2) * PAC8 * FCLK

PNET = (5,000 + 6,000) * (0.1 / 2) * 0.0007 * 50

PNET = 19.25 mW

PLOGIC = PS-CELL + PC-CELL + PNET

PLOGIC = 21.13 mW + 4.35 mW + 19.25 mW

PLOGIC = 44.73 mW

Standby Mode and Sleep Mode

DC and Power Characteristics

3-29 Revision 8

PS-CELL = 0 W

PC-CELL = 0 W

PNET = 0 W

PLOGIC = 0 W

I/O Input and Output Buffer Contribution—PI/O

This example uses LVTTL 3.3 V I/O cells. The output buffers are 12 mA–capable, configured with high

output slew and driving a 35 pF output load.

FCLK = 50 MHz

Number of input pins used: NINPUTS = 30

Number of output pins used: NOUTPUTS = 40

Estimated I/O buffer toggle rate: 2 = 0.1 (10%)

Estimated IO buffer enable rate: 1 = 1 (100%)

Operating Mode

PINPUTS = NINPUTS * (2 / 2) * PAC9 * FCLK

PINPUTS = 30 * (0.1 / 2) * 0.01739 * 50

PINPUTS = 1.30 mW

POUTPUTS = NOUTPUTS * (2 / 2) * 1 * PAC10 * FCLK

POUTPUTS = 40 * (0.1 / 2) * 1 * 0.4747 * 50

POUTPUTS = 47.47 mW

PI/O = PINPUTS + POUTPUTS

PI/O = 1.30 mW + 47.47 mW

PI/O = 48.77 mW

Standby Mode and Sleep Mode

PINPUTS = 0 W

POUTPUTS = 0 W

PI/O = 0 W

RAM Contribution—PMEMORY

Frequency of Read Clock: FREAD-CLOCK = 10 MHz

Frequency of Write Clock: FWRITE-CLOCK = 10 MHz

Number of RAM blocks: NBLOCKS = 20

Estimated RAM Read Enable Rate: 2 = 0.125 (12.5%)

Estimated RAM Write Enable Rate: 3 = 0.125 (12.5%)

Operating Mode

PMEMORY = (NBLOCKS * PAC11 * 2 * FREAD-CLOCK) + (NBLOCKS * PAC12 * 3 * FWRITE-CLOCK)

PMEMORY = (20 * 0.025 * 0.125 * 10) + (20 * 0.030 * 0.125 * 10)

PMEMORY = 1.38 mW

Standby Mode and Sleep Mode

PMEMORY = 0 W

Fusion Family of Mixed Signal FPGAs

Revision 8 3-30

PLL/CCC Contribution—PPLL

PLL is not used in this application.

PPLL = 0 W

Nonvolatile Memory—PNVM

Nonvolatile memory is not used in this application.

PNVM = 0 W

Crystal Oscillator—PXTL-OSC

The application utilizes standby mode. The crystal oscillator is assumed to be active.

Operating Mode

PXTL-OSC = PAC18

PXTL-OSC = 0.63 mW

Standby Mode

PXTL-OSC = PAC18

PXTL-OSC = 0.63 mW

Sleep Mode

PXTL-OSC = 0 W

RC Oscillator—PRC-OSC

Operating Mode

PRC-OSC = PAC19

PRC-OSC = 3.30 mW

Standby Mode and Sleep Mode

PRC-OSC = 0 W

Analog System—PAB

Number of Quads used: NQUADS = 4

Operating Mode

PAB = PAC20

PAB = 3.00 mW

Standby Mode and Sleep Mode

PAB = 0 W

Total Dynamic Power Consumption—PDYN

Operating Mode

PDYN = PCLOCK + PS-CELL + PC-CELL + PNET + PINPUTS + POUTPUTS + PMEMORY + PPLL + PNVM+

PXTL-OSC + PRC-OSC + PAB

PDYN = 41.28 mW + 21.1 mW + 4.35 mW + 19.25 mW + 1.30 mW + 47.47 mW + 1.38 mW + 0 + 0 +

0.63 mW + 3.30 mW + 3.00 mW

PDYN = 143.06 mW

Standby Mode

PDYN = PXTL-OSC

PDYN = 0.63 mW

Sleep Mode

PDYN = 0 W

DC and Power Characteristics

3-31 Revision 8

Total Static Power Consumption—PSTAT

Number of Quads used: NQUADS = 4

Number of NVM blocks available (AFS600): NNVM-BLOCKS = 2

Number of input pins used: NINPUTS = 30

Number of output pins used: NOUTPUTS = 40

Operating Mode

PSTAT = PDC1 + (NNVM-BLOCKS * PDC4) + PDC5 + (NQUADS * PDC6) + (NINPUTS * PDC7) +

(NOUTPUTS * PDC8)

PSTAT = 7.50 mW + (2 * 1.19 mW) + 8.25 mW + (4 * 3.30 mW) + (30 * 0.00) + (40 * 0.00)

PSTAT = 31.33 mW

Standby Mode

PSTAT = PDC2

PSTAT = 0.03 mW

Sleep Mode

PSTAT = PDC3

PSTAT = 0.03 mW

Total Power Consumption—PTOTAL

In operating mode, the total power consumption of the device is 174.39 mW:

PTOTAL = PSTAT + PDYN

PTOTAL = 143.06 mW + 31.33 mW

PTOTAL = 174.39 mW

In standby mode, the total power consumption of the device is limited to 0.66 mW:

PTOTAL = PSTAT + PDYN

PTOTAL = 0.03 mW + 0.63 mW

PTOTAL = 0.66 mW

In sleep mode, the total power consumption of the device drops as low as 0.03 mW:

PTOTAL = PSTAT + PDYN

PTOTAL = 0.03 mW

Fusion Family of Mixed Signal FPGAs

Revision 8 3-32

Power Consumption

Table 3-18 • Power Consumption

Parameter Description Condition Min. Typical Max. Units

Crystal Oscillator

ISTBXTAL Standby Current of Crystal

Oscillator

10 µA

IDYNXTAL Operating Current RC 0.6 mA

0.032–0.2 0.19 mA

0.2–2.0 0.6 mA

2.0–20.0 0.6 mA

RC Oscillator

IDYNRC Operating Current 1 mA

ACM

Operating Current (fixed

clock)

200 µA/MHz

Operating Current (user

clock)

30 µA

NVM System

NVM Array Operating Power Idle 795 µA

Read

operation

See

Table 3-15 on

page 3-23.

See

Table 3-15 on

page 3-23.

Erase 900 µA

Write 900 µA

PNVMCTRL NVM Controller Operating

Power

20 µW/MHz

Revision 8 4-1

4 – Package Pin Assignments

QN108

Note

For more information on package drawings, see PD3068: Package Mechanical Drawings.

Note: The die attach paddle center of the package is tied to ground (GND).

B41 B52

A44 A56

B26 B14

A28 A15

A14

B13

A43

A29

B40

B27

Pin A1 Mark

Package Pin Assignments

4-2 Revision 8

QN108

Pin Number AFS090 Function

A1 NC

A2 GNDQ

A3 GAA2/IO52PDB3V0

A4 GND

A5 GFA1/IO47PDB3V0

A6 GEB1/IO45PDB3V0

A7 VCCOSC

A8 XTAL2

A9 GEA1/IO44PPB3V0

A10 GEA0/IO44NPB3V0

A11 GEB2/IO42PDB3V0

A12 VCCNVM

A13 VCC15A

A14 PCAP

A15 NC

A16 GNDA

A17 AV0

A18 AG0

A19 ATRTN0

A20 AT1

A21 AC1

A22 AV2

A23 AG2

A24 AT2

A25 AT3

A26 AC3

A27 GNDAQ

A28 ADCGNDREF

A29 NC

A30 GNDA

A31 PTEM

A32 GNDNVM

A33 VPUMP

A34 TCK

A35 TMS

A36 TRST

A37 GDB1/IO39PSB1V0

A38 GDC1/IO38PDB1V0

A39 GND

A40 GCB1/IO35PDB1V0

A41 GCB2/IO33PDB1V0

A42 GBA2/IO31PDB1V0

A43 NC

A44 GBA1/IO30RSB0V0

A45 GBB1/IO28RSB0V0

A46 GND

A47 VCC

A48 GBC1/IO26RSB0V0

A49 IO21RSB0V0

A50 IO19RSB0V0

A51 IO09RSB0V0

A52 GAC0/IO04RSB0V0

A53 VCCIB0

A54 GND

A55 GAB0/IO02RSB0V0

A56 GAA0/IO00RSB0V0

B1 VCOMPLA

B2 VCCIB3

B3 GAB2/IO52NDB3V0

B4 VCCIB3

B5 GFA0/IO47NDB3V0

B6 GEB0/IO45NDB3V0

B7 XTAL1

B8 GNDOSC

B9 GEC2/IO43PSB3V0

B10 GEA2/IO42NDB3V0

B11 VCC

B12 GNDNVM

B13 NCAP

B14 VCC33PMP

B15 VCC33N

B16 GNDAQ

B17 AC0

B18 AT0

B19 AG1

B20 AV1

QN108

Pin Number AFS090 Function

B21 AC2

B22 ATRTN1

B23 AG3

B24 AV3

B25 VCC33A

B26 VAREF

B27 PUB

B28 VCC33A

B29 PTBASE

B30 VCCNVM

B31 VCC

B32 TDI

B33 TDO

B34 VJTAG

B35 GDC0/IO38NDB1V

B36 VCCIB1

B37 GCB0/IO35NDB1V0

B38 GCC2/IO33NDB1V

B39 GBB2/IO31NDB1V0

B40 VCCIB1

B41 GNDQ

B42 GBA0/IO29RSB0V0

B43 VCCIB0

B44 GBB0/IO27RSB0V0

B45 GBC0/IO25RSB0V0

B46 IO20RSB0V0

B47 IO10RSB0V0

B48 GAC1/IO05RSB0V0

B49 GAB1/IO03RSB0V0

B50 VCC

B51 GAA1/IO01RSB0V0

B52 VCCPLA

QN108

Pin Number AFS090 Function

Package Pin Assignments

4-3 Revision 8

QN180

Note

For more information on package drawings, see PD3068: Package Mechanical Drawings.

Note: The die attach paddle center of the package is tied to ground (GND).

A16

B15

C14

A48

Pin A1 Mark

Optional Corner

Pad (4X)

A49 A64

A32 A17

B45

B46 B60

B30 B16

C42

C43 C56

C28 C15

A33 B31

C29

Package Pin Assignments

4-4 Revision 8

QN180

Pin Number AFS090 Function AFS250 Function

A1 GNDQ GNDQ

A2 VCCIB3 VCCIB3

A3 GAB2/IO52NDB3V0 IO74NDB3V0

A4 GFA2/IO51NDB3V0 IO71NDB3V0

A5 GFC2/IO50NDB3V0 IO69NPB3V0

A6 VCCIB3 VCCIB3

A7 GFA1/IO47PPB3V0 GFB1/IO67PPB3V0

A8 GEB0/IO45NDB3V0 NC

A9 XTAL1 XTAL1

A10 GNDOSC GNDOSC

A11 GEC2/IO43PPB3V0 GEA1/IO61PPB3V0

A12 IO43NPB3V0 GEA0/IO61NPB3V0

A13 NC VCCIB3

A14 GNDNVM GNDNVM

A15 PCAP PCAP

A16 VCC33PMP VCC33PMP

A17 NC NC

A18 AV0 AV0

A19 AG0 AG0

A20 ATRTN0 ATRTN0

A21 AG1 AG1

A22 AC1 AC1

A23 AV2 AV2

A24 AT2 AT2

A25 AT3 AT3

A26 AC3 AC3

A27 AV4 AV4

A28 AC4 AC4

A29 AT4 AT4

A30 NC AG5

A31 NC AV5

A32 ADCGNDREF ADCGNDREF

A33 VCC33A VCC33A

A34 GNDA GNDA

A35 PTBASE PTBASE

A36 VCCNVM VCCNVM

A37 VPUMP VPUMP

A38 TDI TDI

A39 TDO TDO

A40 VJTAG VJTAG

A41 GDB1/IO39PPB1V0 GDA1/IO54PPB1V0

A42 GDC1/IO38PDB1V0 GDB1/IO53PDB1V0

A43 VCC VCC

A44 GCB0/IO35NPB1V0 GCB0/IO48NPB1V0

A45 GCC1/IO34PDB1V0 GCC1/IO47PDB1V0

A46 VCCIB1 VCCIB1

A47 GBC2/IO32PPB1V0 GBB2/IO41PPB1V0

A48 VCCIB1 VCCIB1

A49 NC NC

A50 GBA0/IO29RSB0V0 GBB1/IO37RSB0V0

A51 VCCIB0 VCCIB0

A52 GBB0/IO27RSB0V0 GBC0/IO34RSB0V0

A53 GBC1/IO26RSB0V0 IO33RSB0V0

A54 IO24RSB0V0 IO29RSB0V0

A55 IO21RSB0V0 IO26RSB0V0

A56 VCCIB0 VCCIB0

A57 IO15RSB0V0 IO21RSB0V0

A58 IO10RSB0V0 IO13RSB0V0

A59 IO07RSB0V0 IO10RSB0V0

A60 GAC0/IO04RSB0V0 IO06RSB0V0

A61 GAB1/IO03RSB0V0 GAC1/IO05RSB0V0

A62 VCC VCC

A63 GAA1/IO01RSB0V0 GAB0/IO02RSB0V0

A64 NC NC

B1 VCOMPLA VCOMPLA

B2 GAA2/IO52PDB3V0 GAC2/IO74PDB3V0

B3 GAC2/IO51PDB3V0 GFA2/IO71PDB3V0

B4 GFB2/IO50PDB3V0 GFB2/IO70PSB3V0

B5 VCC VCC

B6 GFC0/IO49NDB3V0 GFC0/IO68NDB3V0

B7 GEB1/IO45PDB3V0 NC

B8 VCCOSC VCCOSC

QN180

Pin Number AFS090 Function AFS250 Function

Fusion Family of Mixed Signal FPGAs

Revision 8 4-5

B9 XTAL2 XTAL2

B10 GEA0/IO44NDB3V0 GFA0/IO66NDB3V0

B11 GEB2/IO42PDB3V0 IO60NDB3V0

B12 VCC VCC

B13 VCCNVM VCCNVM

B14 VCC15A VCC15A

B15 NCAP NCAP

B16 VCC33N VCC33N

B17 GNDAQ GNDAQ

B18 AC0 AC0

B19 AT0 AT0

B20 AT1 AT1

B21 AV1 AV1

B22 AC2 AC2

B23 ATRTN1 ATRTN1

B24 AG3 AG3

B25 AV3 AV3

B26 AG4 AG4

B27 ATRTN2 ATRTN2

B28 NC AC5

B29 VCC33A VCC33A

B30 VAREF VAREF

B31 PUB PUB

B32 PTEM PTEM

B33 GNDNVM GNDNVM

B34 VCC VCC

B35 TCK TCK

B36 TMS TMS

B37 TRST TRST

B38 GDB2/IO41PSB1V0 GDA2/IO55PSB1V0

B39 GDC0/IO38NDB1V0 GDB0/IO53NDB1V0

B40 VCCIB1 VCCIB1

B41 GCA1/IO36PDB1V0 GCA1/IO49PDB1V0

B42 GCC0/IO34NDB1V0 GCC0/IO47NDB1V0

B43 GCB2/IO33PSB1V0 GBC2/IO42PSB1V0

B44 VCC VCC

QN180

Pin Number AFS090 Function AFS250 Function

B45 GBA2/IO31PDB1V0 GBA2/IO40PDB1V0

B46 GNDQ GNDQ

B47 GBA1/IO30RSB0V0 GBA0/IO38RSB0V0

B48 GBB1/IO28RSB0V0 GBC1/IO35RSB0V0

B49 VCC VCC

B50 GBC0/IO25RSB0V0 IO31RSB0V0

B51 IO23RSB0V0 IO28RSB0V0

B52 IO20RSB0V0 IO25RSB0V0

B53 VCC VCC

B54 IO11RSB0V0 IO14RSB0V0

B55 IO08RSB0V0 IO11RSB0V0

B56 GAC1/IO05RSB0V0 IO08RSB0V0

B57 VCCIB0 VCCIB0

B58 GAB0/IO02RSB0V0 GAC0/IO04RSB0V0

B59 GAA0/IO00RSB0V0 GAA1/IO01RSB0V0

B60 VCCPLA VCCPLA

C1 NC NC

C2 NC VCCIB3

C3 GND GND

C4 NC GFC2/IO69PPB3V0

C5 GFC1/IO49PDB3V0 GFC1/IO68PDB3V0

C6 GFA0/IO47NPB3V0 GFB0/IO67NPB3V0

C7 VCCIB3 NC

C8 GND GND

C9 GEA1/IO44PDB3V0 GFA1/IO66PDB3V0

C10 GEA2/IO42NDB3V0 GEC2/IO60PDB3V0

C11 NC GEA2/IO58PSB3V0

C12 NC NC

C13 GND GND

C14 NC NC

C15 NC NC

C16 GNDA GNDA

C17 NC NC

C18 NC NC

C19 NC NC

C20 NC NC

QN180

Pin Number AFS090 Function AFS250 Function

Package Pin Assignments

4-6 Revision 8

C21 AG2 AG2

C22 NC NC

C23 NC NC

C24 NC NC

C25 NC AT5

C26 GNDAQ GNDAQ

C27 NC NC

C28 NC NC

C29 NC NC

C30 NC NC

C31 GND GND

C32 NC NC

C33 NC NC

C34 NC NC

C35 GND GND

C36 GDB0/IO39NPB1V0 GDA0/IO54NPB1V0

C37 GDA1/IO37NSB1V0 GDC0/IO52NSB1V0

C38 GCA0/IO36NDB1V0 GCA0/IO49NDB1V0

C39 GCB1/IO35PPB1V0 GCB1/IO48PPB1V0

C40 GND GND

C41 GCA2/IO32NPB1V0 IO41NPB1V0

C42 GBB2/IO31NDB1V0 IO40NDB1V0

C43 NC NC

C44 NC GBA1/IO39RSB0V0

C45 NC GBB0/IO36RSB0V0

C46 GND GND

C47 NC IO30RSB0V0

C48 IO22RSB0V0 IO27RSB0V0

C49 GND GND

C50 IO13RSB0V0 IO16RSB0V0

C51 IO09RSB0V0 IO12RSB0V0

C52 IO06RSB0V0 IO09RSB0V0

C53 GND GND

C54 NC GAB1/IO03RSB0V0

C55 NC GAA0/IO00RSB0V0

C56 NC NC

QN180

Pin Number AFS090 Function AFS250 Function

D1 NC NC

D2 NC NC

D3 NC NC

D4 NC NC

QN180

Pin Number AFS090 Function AFS250 Function

Package Pin Assignments

4-7 Revision 8

PQ208

Note

1. Package PQ208 is discontinued.

2. For more information on package drawings, see PD3068: Package Mechanical Drawings.

208-Pin PQFP

1208

Package Pin Assignments

4-8 Revision 8

PQ208

Number AFS250 Function AFS600 Function

1 VCCPLA VCCPLA

2 VCOMPLA VCOMPLA

3 GNDQ GAA2/IO85PDB4V0

4 VCCIB3 IO85NDB4V0

5 GAA2/IO76PDB3V0 GAB2/IO84PDB4V0

6 IO76NDB3V0 IO84NDB4V0

7 GAB2/IO75PDB3V0 GAC2/IO83PDB4V0

8 IO75NDB3V0 IO83NDB4V0

9NCIO77PDB4V0

10 NC IO77NDB4V0

11 VCC IO76PDB4V0

12 GND IO76NDB4V0

13 VCCIB3 VCC

14 IO72PDB3V0 GND

15 IO72NDB3V0 VCCIB4

16 GFA2/IO71PDB3V0 GFA2/IO75PDB4V0

17 IO71NDB3V0 IO75NDB4V0

18 GFB2/IO70PDB3V0 GFC2/IO73PDB4V0

19 IO70NDB3V0 IO73NDB4V0

20 GFC2/IO69PDB3V0 VCCOSC

21 IO69NDB3V0 XTAL1

22 VCC XTAL2

23 GND GNDOSC

24 VCCIB3 GFC1/IO72PDB4V0

25 GFC1/IO68PDB3V0 GFC0/IO72NDB4V0

26 GFC0/IO68NDB3V0 GFB1/IO71PDB4V0

27 GFB1/IO67PDB3V0 GFB0/IO71NDB4V0

28 GFB0/IO67NDB3V0 GFA1/IO70PDB4V0

29 VCCOSC GFA0/IO70NDB4V0

30 XTAL1 IO69PDB4V0

31 XTAL2 IO69NDB4V0

32 GNDOSC VCC

33 GEB1/IO62PDB3V0 GND

34 GEB0/IO62NDB3V0 VCCIB4

35 GEA1/IO61PDB3V0 GEC1/IO63PDB4V0

36 GEA0/IO61NDB3V0 GEC0/IO63NDB4V0

37 GEC2/IO60PDB3V0 GEB1/IO62PDB4V0

38 IO60NDB3V0 GEB0/IO62NDB4V0

39 GND GEA1/IO61PDB4V0

40 VCCIB3 GEA0/IO61NDB4V0

41 GEB2/IO59PDB3V0 GEC2/IO60PDB4V0

42 IO59NDB3V0 IO60NDB4V0

43 GEA2/IO58PDB3V0 VCCIB4

44 IO58NDB3V0 GNDQ

45 VCC VCC

46 VCCNVM VCCNVM

47 GNDNVM GNDNVM

48 GND GND

49 VCC15A VCC15A

50 PCAP PCAP

51 NCAP NCAP

52 VCC33PMP VCC33PMP

53 VCC33N VCC33N

54 GNDA GNDA

55 GNDAQ GNDAQ

56 NC AV0

57 NC AC0

58 NC AG0

59 NC AT0

60 NC ATRTN0

61 NC AT1

62 NC AG1

63 NC AC1

64 NC AV1

65 AV0 AV2

66 AC0 AC2

67 AG0 AG2

68 AT0 AT2

69 ATRTN0 ATRTN1

70 AT1 AT3

71 AG1 AG3

72 AC1 AC3

73 AV1 AV3

PQ208

Number AFS250 Function AFS600 Function

Fusion Family of Mixed Signal FPGAs

Revision 8 4-9

74 AV2 AV4

75 AC2 AC4

76 AG2 AG4

77 AT2 AT4

78 ATRTN1 ATRTN2

79 AT3 AT5

80 AG3 AG5

81 AC3 AC5

82 AV3 AV5

83 AV4 AV6

84 AC4 AC6

85 AG4 AG6

86 AT4 AT6

87 ATRTN2 ATRTN3

88 AT5 AT7

89 AG5 AG7

90 AC5 AC7

91 AV5 AV7

92 NC AV8

93 NC AC8

94 NC AG8

95 NC AT8

96 NC ATRTN4

97 NC AT9

98 NC AG9

99 NC AC9

100 NC AV9

101 GNDAQ GNDAQ

102 VCC33A VCC33A

103 ADCGNDREF ADCGNDREF

104 VAREF VAREF

105 PUB PUB

106 VCC33A VCC33A

107 GNDA GNDA

108 PTEM PTEM

109 PTBASE PTBASE

110 GNDNVM GNDNVM

PQ208

Number AFS250 Function AFS600 Function

111 VCCNVM VCCNVM

112 VCC VCC

113 VPUMP VPUMP

114 GNDQ NC

115 VCCIB1 TCK

116 TCK TDI

117 TDI TMS

118 TMS TDO

119 TDO TRST

120 TRST VJTAG

121 VJTAG IO57NDB2V0

122 IO57NDB1V0 GDC2/IO57PDB2V0

123 GDC2/IO57PDB1V0 IO56NDB2V0

124 IO56NDB1V0 GDB2/IO56PDB2V0

125 GDB2/IO56PDB1V0 IO55NDB2V0

126 VCCIB1 GDA2/IO55PDB2V0

127 GND GDA0/IO54NDB2V0

128 IO55NDB1V0 GDA1/IO54PDB2V0

129 GDA2/IO55PDB1V0 VCCIB2

130 GDA0/IO54NDB1V0 GND

131 GDA1/IO54PDB1V0 VCC

132 GDB0/IO53NDB1V0 GCA0/IO45NDB2V0

133 GDB1/IO53PDB1V0 GCA1/IO45PDB2V0

134 GDC0/IO52NDB1V0 GCB0/IO44NDB2V0

135 GDC1/IO52PDB1V0 GCB1/IO44PDB2V0

136 IO51NSB1V0 GCC0/IO43NDB2V

137 VCCIB1 GCC1/IO43PDB2V0

138 GND IO42NDB2V0

139 VCC IO42PDB2V0

140 IO50NDB1V0 IO41NDB2V0

141 IO50PDB1V0 GCC2/IO41PDB2V0

142 GCA0/IO49NDB1V0 VCCIB2

143 GCA1/IO49PDB1V0 GND

144 GCB0/IO48NDB1V0 VCC

145 GCB1/IO48PDB1V0 IO40NDB2V0

146 GCC0/IO47NDB1V0 GCB2/IO40PDB2V0

PQ208

Number AFS250 Function AFS600 Function

Package Pin Assignments

4-10 Revision 8

147 GCC1/IO47PDB1V0 IO39NDB2V0

148 IO42NDB1V0 GCA2/IO39PDB2V0

149 GBC2/IO42PDB1V0 IO31NDB2V0

150 VCCIB1 GBB2/IO31PDB2V0

151 GND IO30NDB2V0

152 VCC GBA2/IO30PDB2V0

153 IO41NDB1V0 VCCIB2

154 GBB2/IO41PDB1V0 GNDQ

155 IO40NDB1V0 VCOMPLB

156 GBA2/IO40PDB1V0 VCCPLB

157 GBA1/IO39RSB0V0 VCCIB1

158 GBA0/IO38RSB0V0 GNDQ

159 GBB1/IO37RSB0V0 GBB1/IO27PPB1V1

160 GBB0/IO36RSB0V0 GBA1/IO28PPB1V1

161 GBC1/IO35RSB0V0 GBB0/IO27NPB1V1

162 VCCIB0 GBA0/IO28NPB1V1

163 GND VCCIB1

164 VCC GND

165 GBC0/IO34RSB0V0 VCC

166 IO33RSB0V0 GBC1/IO26PDB1V1

167 IO32RSB0V0 GBC0/IO26NDB1V1

168 IO31RSB0V0 IO24PPB1V1

169 IO30RSB0V0 IO23PPB1V1

170 IO29RSB0V0 IO24NPB1V1

171 IO28RSB0V0 IO23NPB1V1

172 IO27RSB0V0 IO22PPB1V0

173 IO26RSB0V0 IO21PPB1V0

174 IO25RSB0V0 IO22NPB1V0

175 VCCIB0 IO21NPB1V0

176 GND IO20PSB1V0

177 VCC IO19PSB1V0

178 IO24RSB0V0 IO14NSB0V1

179 IO23RSB0V0 IO12PDB0V1

180 IO22RSB0V0 IO12NDB0V1

181 IO21RSB0V0 VCCIB0

182 IO20RSB0V0 GND

183 IO19RSB0V0 VCC

PQ208

Number AFS250 Function AFS600 Function

184 IO18RSB0V0 IO10PPB0V1

185 IO17RSB0V0 IO09PPB0V1

186 IO16RSB0V0 IO10NPB0V1

187 IO15RSB0V0 IO09NPB0V1

188 VCCIB0 IO08PPB0V1

189 GND IO07PPB0V1

190 VCC IO08NPB0V1

191 IO14RSB0V0 IO07NPB0V1

192 IO13RSB0V0 IO06PPB0V0

193 IO12RSB0V0 IO05PPB0V0

194 IO11RSB0V0 IO06NPB0V0

195 IO10RSB0V0 IO04PPB0V0

196 IO09RSB0V0 IO05NPB0V0

197 IO08RSB0V0 IO04NPB0V0

198 IO07RSB0V0 GAC1/IO03PDB0V0

199 IO06RSB0V0 GAC0/IO03NDB0V0

200 GAC1/IO05RSB0V0 VCCIB0

201 VCCIB0 GND

202 GND VCC

203 VCC GAB1/IO02PDB0V0

204 GAC0/IO04RSB0V0 GAB0/IO02NDB0V0

205 GAB1/IO03RSB0V0 GAA1/IO01PDB0V0

206 GAB0/IO02RSB0V0 GAA0/IO01NDB0V0

207 GAA1/IO01RSB0V0 GNDQ

208 GAA0/IO00RSB0V0 VCCIB0

PQ208

Number AFS250 Function AFS600 Function

Package Pin Assignments

4-11 Revision 8

FG256

Note

For more information on package drawings, see PD3068: Package Mechanical Drawings.

791113

15 246

101214

A1 Ball Pad Corner

Fusion Family of Mixed Signal FPGAs

Revision 8 4-12

FG256

Pin Number AFS090 Function AFS250 Function AFS600 Function AFS1500 Function

A1GNDGNDGNDGND

A2 VCCIB0 VCCIB0 VCCIB0 VCCIB0

A3 GAB0/IO02RSB0V0 GAA0/IO00RSB0V0 GAA0/IO01NDB0V0 GAA0/IO01NDB0V0

A4 GAB1/IO03RSB0V0 GAA1/IO01RSB0V0 GAA1/IO01PDB0V0 GAA1/IO01PDB0V0

A5GNDGNDGNDGND

A6 IO07RSB0V0 IO11RSB0V0 IO10PDB0V1 IO07PDB0V1

A7 IO10RSB0V0 IO14RSB0V0 IO12PDB0V1 IO13PDB0V2

A8 IO11RSB0V0 IO15RSB0V0 IO12NDB0V1 IO13NDB0V2

A9 IO16RSB0V0 IO24RSB0V0 IO22NDB1V0 IO24NDB1V0

A10 IO17RSB0V0 IO25RSB0V0 IO22PDB1V0 IO24PDB1V0

A11 IO18RSB0V0 IO26RSB0V0 IO24NDB1V1 IO29NDB1V1

A12 GND GND GND GND

A13 GBC0/IO25RSB0V0 GBA0/IO38RSB0V0 GBA0/IO28NDB1V1 GBA0/IO42NDB1V2

A14 GBA0/IO29RSB0V0 IO32RSB0V0 IO29NDB1V1 IO43NDB1V2

A15 VCCIB0 VCCIB0 VCCIB1 VCCIB1

A16 GND GND GND GND

B1 VCOMPLA VCOMPLA VCOMPLA VCOMPLA

B2 VCCPLA VCCPLA VCCPLA VCCPLA

B3 GAA0/IO00RSB0V0 IO07RSB0V0 IO00NDB0V0 IO00NDB0V0

B4 GAA1/IO01RSB0V0 IO06RSB0V0 IO00PDB0V0 IO00PDB0V0

B5 NC GAB1/IO03RSB0V0 GAB1/IO02PPB0V0 GAB1/IO02PPB0V0

B6 IO06RSB0V0 IO10RSB0V0 IO10NDB0V1 IO07NDB0V1

B7 VCCIB0 VCCIB0 VCCIB0 VCCIB0

B8 IO12RSB0V0 IO16RSB0V0 IO18NDB1V0 IO22NDB1V0

B9 IO13RSB0V0 IO17RSB0V0 IO18PDB1V0 IO22PDB1V0

B10 VCCIB0 VCCIB0 VCCIB1 VCCIB1

B11 IO19RSB0V0 IO27RSB0V0 IO24PDB1V1 IO29PDB1V1

B12 GBB0/IO27RSB0V0 GBC0/IO34RSB0V0 GBC0/IO26NPB1V1 GBC0/IO40NPB1V2

B13 GBC1/IO26RSB0V0 GBA1/IO39RSB0V0 GBA1/IO28PDB1V1 GBA1/IO42PDB1V2

B14 GBA1/IO30RSB0V0 IO33RSB0V0 IO29PDB1V1 IO43PDB1V2

B15 NC NC VCCPLB VCCPLB

B16 NC NC VCOMPLB VCOMPLB

C1 VCCIB3 VCCIB3 VCCIB4 VCCIB4

C2 GND GND GND GND

C3 VCCIB3 VCCIB3 VCCIB4 VCCIB4

C4 NC NC VCCIB0 VCCIB0

C5 VCCIB0 VCCIB0 VCCIB0 VCCIB0

C6 GAC1/IO05RSB0V0 GAC1/IO05RSB0V0 GAC1/IO03PDB0V0 GAC1/IO03PDB0V0

Package Pin Assignments

4-13 Revision 8

C7 IO09RSB0V0 IO12RSB0V0 IO06NDB0V0 IO09NDB0V1

C8 IO14RSB0V0 IO22RSB0V0 IO16PDB1V0 IO23PDB1V0

C9 IO15RSB0V0 IO23RSB0V0 IO16NDB1V0 IO23NDB1V0

C10 IO22RSB0V0 IO30RSB0V0 IO25NDB1V1 IO31NDB1V1

C11 IO20RSB0V0 IO31RSB0V0 IO25PDB1V1 IO31PDB1V1

C12 VCCIB0 VCCIB0 VCCIB1 VCCIB1

C13 GBB1/IO28RSB0V0 GBC1/IO35RSB0V0 GBC1/IO26PPB1V1 GBC1/IO40PPB1V2

C14 VCCIB1 VCCIB1 VCCIB2 VCCIB2

C15 GND GND GND GND

C16 VCCIB1 VCCIB1 VCCIB2 VCCIB2

D1 GFC2/IO50NPB3V0 IO75NDB3V0 IO84NDB4V0 IO124NDB4V0

D2 GFA2/IO51NDB3V0 GAB2/IO75PDB3V0 GAB2/IO84PDB4V0 GAB2/IO124PDB4V0

D3 GAC2/IO51PDB3V0 IO76NDB3V0 IO85NDB4V0 IO125NDB4V0

D4 GAA2/IO52PDB3V0 GAA2/IO76PDB3V0 GAA2/IO85PDB4V0 GAA2/IO125PDB4V0

D5 GAB2/IO52NDB3V0 GAB0/IO02RSB0V0 GAB0/IO02NPB0V0 GAB0/IO02NPB0V0

D6 GAC0/IO04RSB0V0 GAC0/IO04RSB0V0 GAC0/IO03NDB0V0 GAC0/IO03NDB0V0

D7 IO08RSB0V0 IO13RSB0V0 IO06PDB0V0 IO09PDB0V1

D8 NC IO20RSB0V0 IO14NDB0V1 IO15NDB0V2

D9 NC IO21RSB0V0 IO14PDB0V1 IO15PDB0V2

D10 IO21RSB0V0 IO28RSB0V0 IO23PDB1V1 IO37PDB1V2

D11 IO23RSB0V0 GBB0/IO36RSB0V0 GBB0/IO27NDB1V1 GBB0/IO41NDB1V2

D12 NC NC VCCIB1 VCCIB1

D13 GBA2/IO31PDB1V0 GBA2/IO40PDB1V0 GBA2/IO30PDB2V0 GBA2/IO44PDB2V0

D14 GBB2/IO31NDB1V0 IO40NDB1V0 IO30NDB2V0 IO44NDB2V0

D15 GBC2/IO32PDB1V0 GBB2/IO41PDB1V0 GBB2/IO31PDB2V0 GBB2/IO45PDB2V0

D16 GCA2/IO32NDB1V0 IO41NDB1V0 IO31NDB2V0 IO45NDB2V0

E1GNDGNDGNDGND

E2 GFB0/IO48NPB3V0 IO73NDB3V0 IO81NDB4V0 IO118NDB4V0

E3 GFB2/IO50PPB3V0 IO73PDB3V0 IO81PDB4V0 IO118PDB4V0

E4 VCCIB3 VCCIB3 VCCIB4 VCCIB4

E5 NC IO74NPB3V0 IO83NPB4V0 IO123NPB4V0

E6 NC IO08RSB0V0 IO04NPB0V0 IO05NPB0V1

E7GNDGNDGNDGND

E8 NC IO18RSB0V0 IO08PDB0V1 IO11PDB0V1

E9 NC NC IO20NDB1V0 IO27NDB1V1

E10 GND GND GND GND

E11 IO24RSB0V0 GBB1/IO37RSB0V0 GBB1/IO27PDB1V1 GBB1/IO41PDB1V2

E12 NC IO50PPB1V0 IO33PSB2V0 IO48PSB2V0

FG256

Pin Number AFS090 Function AFS250 Function AFS600 Function AFS1500 Function

Fusion Family of Mixed Signal FPGAs

Revision 8 4-14

E13 VCCIB1 VCCIB1 VCCIB2 VCCIB2

E14 GCC2/IO33NDB1V0 IO42NDB1V0 IO32NDB2V0 IO46NDB2V0

E15 GCB2/IO33PDB1V0 GBC2/IO42PDB1V0 GBC2/IO32PDB2V0 GBC2/IO46PDB2V0

E16 GND GND GND GND

F1 NC NC IO79NDB4V0 IO111NDB4V0

F2 NC NC IO79PDB4V0 IO111PDB4V0

F3 GFB1/IO48PPB3V0 IO72NDB3V0 IO76NDB4V0 IO112NDB4V0

F4 GFC0/IO49NDB3V0 IO72PDB3V0 IO76PDB4V0 IO112PDB4V0

F5 NC NC IO82PSB4V0 IO120PSB4V0

F6 GFC1/IO49PDB3V0 GAC2/IO74PPB3V0 GAC2/IO83PPB4V0 GAC2/IO123PPB4V0

F7 NC IO09RSB0V0 IO04PPB0V0 IO05PPB0V1

F8 NC IO19RSB0V0 IO08NDB0V1 IO11NDB0V1

F9 NC NC IO20PDB1V0 IO27PDB1V1

F10 NC IO29RSB0V0 IO23NDB1V1 IO37NDB1V2

F11 NC IO43NDB1V0 IO36NDB2V0 IO50NDB2V0

F12 NC IO43PDB1V0 IO36PDB2V0 IO50PDB2V0

F13 NC IO44NDB1V0 IO39NDB2V0 IO59NDB2V0

F14 NC GCA2/IO44PDB1V0 GCA2/IO39PDB2V0 GCA2/IO59PDB2V0

F15 GCC1/IO34PDB1V0 GCB2/IO45PDB1V0 GCB2/IO40PDB2V0 GCB2/IO60PDB2V0

F16 GCC0/IO34NDB1V0 IO45NDB1V0 IO40NDB2V0 IO60NDB2V0

G1 GEC0/IO46NPB3V0 IO70NPB3V0 IO74NPB4V0 IO109NPB4V0

G2 VCCIB3 VCCIB3 VCCIB4 VCCIB4

G3 GEC1/IO46PPB3V0 GFB2/IO70PPB3V0 GFB2/IO74PPB4V0 GFB2/IO109PPB4V0

G4 GFA1/IO47PDB3V0 GFA2/IO71PDB3V0 GFA2/IO75PDB4V0 GFA2/IO110PDB4V0

G5 GND GND GND GND

G6 GFA0/IO47NDB3V0 IO71NDB3V0 IO75NDB4V0 IO110NDB4V0

G7 GND GND GND GND

G8 VCC VCC VCC VCC

G9 GND GND GND GND

G10 VCC VCC VCC VCC

G11 GDA1/IO37NDB1V0 GCC0/IO47NDB1V0 GCC0/IO43NDB2V0 GCC0/IO62NDB2V0

G12 GND GND GND GND

G13 IO37PDB1V0 GCC1/IO47PDB1V0 GCC1/IO43PDB2V0 GCC1/IO62PDB2V0

G14 GCB0/IO35NPB1V0 IO46NPB1V0 IO41NPB2V0 IO61NPB2V0

G15 VCCIB1 VCCIB1 VCCIB2 VCCIB2

G16 GCB1/IO35PPB1V0 GCC2/IO46PPB1V0 GCC2/IO41PPB2V0 GCC2/IO61PPB2V0

H1 GEB1/IO45PDB3V0 GFC2/IO69PDB3V0 GFC2/IO73PDB4V0 GFC2/IO108PDB4V0

H2 GEB0/IO45NDB3V0 IO69NDB3V0 IO73NDB4V0 IO108NDB4V0

FG256

Pin Number AFS090 Function AFS250 Function AFS600 Function AFS1500 Function

Package Pin Assignments

4-15 Revision 8

H3 XTAL2 XTAL2 XTAL2 XTAL2

H4 XTAL1 XTAL1 XTAL1 XTAL1

H5 GNDOSC GNDOSC GNDOSC GNDOSC

H6 VCCOSC VCCOSC VCCOSC VCCOSC

H7 VCC VCC VCC VCC

H8 GND GND GND GND

H9 VCC VCC VCC VCC

H10 GND GND GND GND

H11 GDC0/IO38NDB1V0 IO51NDB1V0 IO47NDB2V0 IO69NDB2V0

H12 GDC1/IO38PDB1V0 IO51PDB1V0 IO47PDB2V0 IO69PDB2V0

H13 GDB1/IO39PDB1V0 GCA1/IO49PDB1V0 GCA1/IO45PDB2V0 GCA1/IO64PDB2V0

H14 GDB0/IO39NDB1V0 GCA0/IO49NDB1V0 GCA0/IO45NDB2V0 GCA0/IO64NDB2V0

H15 GCA0/IO36NDB1V0 GCB0/IO48NDB1V0 GCB0/IO44NDB2V0 GCB0/IO63NDB2V0

H16 GCA1/IO36PDB1V0 GCB1/IO48PDB1V0 GCB1/IO44PDB2V0 GCB1/IO63PDB2V0

J1 GEA0/IO44NDB3V0 GFA0/IO66NDB3V0 GFA0/IO70NDB4V0 GFA0/IO105NDB4V0

J2 GEA1/IO44PDB3V0 GFA1/IO66PDB3V0 GFA1/IO70PDB4V0 GFA1/IO105PDB4V0

J3 IO43NDB3V0 GFB0/IO67NDB3V0 GFB0/IO71NDB4V0 GFB0/IO106NDB4V0

J4 GEC2/IO43PDB3V0 GFB1/IO67PDB3V0 GFB1/IO71PDB4V0 GFB1/IO106PDB4V0

J5 NC GFC0/IO68NDB3V0 GFC0/IO72NDB4V0 GFC0/IO107NDB4V0

J6 NC GFC1/IO68PDB3V0 GFC1/IO72PDB4V0 GFC1/IO107PDB4V0

J7GNDGNDGNDGND

J8 VCC VCC VCC VCC

J9GNDGNDGNDGND

J10 VCC VCC VCC VCC

J11 GDC2/IO41NPB1V0 IO56NPB1V0 IO56NPB2V0 IO83NPB2V0

J12 NC GDB0/IO53NPB1V0 GDB0/IO53NPB2V0 GDB0/IO80NPB2V0

J13 NC GDA1/IO54PDB1V0 GDA1/IO54PDB2V0 GDA1/IO81PDB2V0

J14 GDA0/IO40PDB1V0 GDC1/IO52PPB1V0 GDC1/IO52PPB2V0 GDC1/IO79PPB2V0

J15 NC IO50NPB1V0 IO51NSB2V0 IO77NSB2V0

J16 GDA2/IO40NDB1V0 GDC0/IO52NPB1V0 GDC0/IO52NPB2V0 GDC0/IO79NPB2V0

K1 NC IO65NPB3V0 IO67NPB4V0 IO92NPB4V0

K2 VCCIB3 VCCIB3 VCCIB4 VCCIB4

K3 NC IO65PPB3V0 IO67PPB4V0 IO92PPB4V0

K4 NC IO64PDB3V0 IO65PDB4V0 IO96PDB4V0

K5GNDGNDGNDGND

K6 NC IO64NDB3V0 IO65NDB4V0 IO96NDB4V0

K7 VCC VCC VCC VCC

K8GNDGNDGNDGND

FG256

Pin Number AFS090 Function AFS250 Function AFS600 Function AFS1500 Function

Fusion Family of Mixed Signal FPGAs

Revision 8 4-16

K9 VCC VCC VCC VCC

K10 GND GND GND GND

K11 NC GDC2/IO57PPB1V0 GDC2/IO57PPB2V0 GDC2/IO84PPB2V0

K12 GND GND GND GND

K13 NC GDA0/IO54NDB1V0 GDA0/IO54NDB2V0 GDA0/IO81NDB2V0

K14 NC GDA2/IO55PPB1V0 GDA2/IO55PPB2V0 GDA2/IO82PPB2V0

K15 VCCIB1 VCCIB1 VCCIB2 VCCIB2

K16 NC GDB1/IO53PPB1V0 GDB1/IO53PPB2V0 GDB1/IO80PPB2V0

L1 NC GEC1/IO63PDB3V0 GEC1/IO63PDB4V0 GEC1/IO90PDB4V0

L2 NC GEC0/IO63NDB3V0 GEC0/IO63NDB4V0 GEC0/IO90NDB4V0

L3 NC GEB1/IO62PDB3V0 GEB1/IO62PDB4V0 GEB1/IO89PDB4V0

L4 NC GEB0/IO62NDB3V0 GEB0/IO62NDB4V0 GEB0/IO89NDB4V0

L5 NC IO60NDB3V0 IO60NDB4V0 IO87NDB4V0

L6 NC GEC2/IO60PDB3V0 GEC2/IO60PDB4V0 GEC2/IO87PDB4V0

L7 GNDA GNDA GNDA GNDA

L8AC0AC0AC2AC2

L9 AV2 AV2 AV4 AV4

L10AC3AC3AC5AC5

L11 PTEM PTEM PTEM PTEM

L12 TDO TDO TDO TDO

L13 VJTAG VJTAG VJTAG VJTAG

L14 NC IO57NPB1V0 IO57NPB2V0 IO84NPB2V0

L15 GDB2/IO41PPB1V0 GDB2/IO56PPB1V0 GDB2/IO56PPB2V0 GDB2/IO83PPB2V0

L16 NC IO55NPB1V0 IO55NPB2V0 IO82NPB2V0

M1GNDGNDGNDGND

M2 NC GEA1/IO61PDB3V0 GEA1/IO61PDB4V0 GEA1/IO88PDB4V0

M3 NC GEA0/IO61NDB3V0 GEA0/IO61NDB4V0 GEA0/IO88NDB4V0

M4 VCCIB3 VCCIB3 VCCIB4 VCCIB4

M5 NC IO58NPB3V0 IO58NPB4V0 IO85NPB4V0

M6 NC NC AV0 AV0

M7 NC NC AC1 AC1

M8 AG1 AG1 AG3 AG3

M9AC2AC2AC4AC4

M10 AC4 AC4 AC6 AC6

M11 NC AG5 AG7 AG7

M12 VPUMP VPUMP VPUMP VPUMP

M13 VCCIB1 VCCIB1 VCCIB2 VCCIB2

M14 TMS TMS TMS TMS

FG256

Pin Number AFS090 Function AFS250 Function AFS600 Function AFS1500 Function

Package Pin Assignments

4-17 Revision 8

M15 TRST TRST TRST TRST

M16 GND GND GND GND

N1 GEB2/IO42PDB3V0 GEB2/IO59PDB3V0 GEB2/IO59PDB4V0 GEB2/IO86PDB4V0

N2 GEA2/IO42NDB3V0 IO59NDB3V0 IO59NDB4V0 IO86NDB4V0

N3 NC GEA2/IO58PPB3V0 GEA2/IO58PPB4V0 GEA2/IO85PPB4V0

N4 VCC33PMP VCC33PMP VCC33PMP VCC33PMP

N5 VCC15A VCC15A VCC15A VCC15A

N6 NC NC AG0 AG0

N7 AC1 AC1 AC3 AC3

N8 AG3 AG3 AG5 AG5

N9 AV3 AV3 AV5 AV5

N10 AG4 AG4 AG6 AG6

N11 NC NC AC8 AC8

N12 GNDA GNDA GNDA GNDA

N13 VCC33A VCC33A VCC33A VCC33A

N14 VCCNVM VCCNVM VCCNVM VCCNVM

N15 TCK TCK TCK TCK

N16 TDI TDI TDI TDI

P1 VCCNVM VCCNVM VCCNVM VCCNVM

P2 GNDNVM GNDNVM GNDNVM GNDNVM

P3 GNDA GNDA GNDA GNDA

P4 NC NC AC0 AC0

P5 NC NC AG1 AG1

P6 NC NC AV1 AV1

P7 AG0 AG0 AG2 AG2

P8 AG2 AG2 AG4 AG4

P9 GNDA GNDA GNDA GNDA

P10 NC AC5 AC7 AC7

P11 NC NC AV8 AV8

P12 NC NC AG8 AG8

P13 NC NC AV9 AV9

P14 ADCGNDREF ADCGNDREF ADCGNDREF ADCGNDREF

P15 PTBASE PTBASE PTBASE PTBASE

P16 GNDNVM GNDNVM GNDNVM GNDNVM

R1 VCCIB3 VCCIB3 VCCIB4 VCCIB4

R2 PCAP PCAP PCAP PCAP

R3 NC NC AT1 AT1

R4 NC NC AT0 AT0

FG256

Pin Number AFS090 Function AFS250 Function AFS600 Function AFS1500 Function

Fusion Family of Mixed Signal FPGAs

Revision 8 4-18

R5 AV0 AV0 AV2 AV2

R6 AT0 AT0 AT2 AT2

R7 AV1 AV1 AV3 AV3

R8 AT3 AT3 AT5 AT5

R9 AV4 AV4 AV6 AV6

R10 NC AT5 AT7 AT7

R11 NC AV5 AV7 AV7

R12 NC NC AT9 AT9

R13 NC NC AG9 AG9

R14 NC NC AC9 AC9

R15 PUB PUB PUB PUB

R16 VCCIB1 VCCIB1 VCCIB2 VCCIB2

T1GNDGNDGNDGND

T2 NCAP NCAP NCAP NCAP

T3 VCC33N VCC33N VCC33N VCC33N

T4 NC NC ATRTN0 ATRTN0

T5 AT1 AT1 AT3 AT3

T6 ATRTN0 ATRTN0 ATRTN1 ATRTN1

T7 AT2 AT2 AT4 AT4

T8 ATRTN1 ATRTN1 ATRTN2 ATRTN2

T9 AT4 AT4 AT6 AT6

T10 ATRTN2 ATRTN2 ATRTN3 ATRTN3

T11 NC NC AT8 AT8

T12 NC NC ATRTN4 ATRTN4

T13 GNDA GNDA GNDA GNDA

T14 VCC33A VCC33A VCC33A VCC33A

T15 VAREF VAREF VAREF VAREF

T16 GND GND GND GND

FG256

Pin Number AFS090 Function AFS250 Function AFS600 Function AFS1500 Function

Package Pin Assignments

4-19 Revision 8

FG484

Note

For more information on package drawings, see PD3068: Package Mechanical Drawings.

12345678910111213141516171819202122

A1 Ball Pad Corner

Package Pin Assignments

4-20 Revision 8

FG484

Number AFS600 Function AFS1500 Function

A1 GND GND

A2 VCC NC

A3 GAA1/IO01PDB0V0 GAA1/IO01PDB0V0

A4 GAB0/IO02NDB0V0 GAB0/IO02NDB0V0

A5 GAB1/IO02PDB0V0 GAB1/IO02PDB0V0

A6 IO07NDB0V1 IO07NDB0V1

A7 IO07PDB0V1 IO07PDB0V1

A8 IO10PDB0V1 IO09PDB0V1

A9 IO14NDB0V1 IO13NDB0V2

A10 IO14PDB0V1 IO13PDB0V2

A11 IO17PDB1V0 IO24PDB1V0

A12 IO18PDB1V0 IO26PDB1V0

A13 IO19NDB1V0 IO27NDB1V1

A14 IO19PDB1V0 IO27PDB1V1

A15 IO24NDB1V1 IO35NDB1V2

A16 IO24PDB1V1 IO35PDB1V2

A17 GBC0/IO26NDB1V1 GBC0/IO40NDB1V2

A18 GBA0/IO28NDB1V1 GBA0/IO42NDB1V2

A19 IO29NDB1V1 IO43NDB1V2

A20 IO29PDB1V1 IO43PDB1V2

A21 VCC NC

A22 GND GND

AA1 VCC NC

AA2 GND GND

AA3 VCCIB4 VCCIB4

AA4 VCCIB4 VCCIB4

AA5 PCAP PCAP

AA6 AG0 AG0

AA7 GNDA GNDA

AA8 AG1 AG1

AA9 AG2 AG2

AA10 GNDA GNDA

AA11 AG3 AG3

AA12 AG6 AG6

AA13 GNDA GNDA

AA14 AG7 AG7

AA15 AG8 AG8

AA16 GNDA GNDA

AA17 AG9 AG9

AA18 VAREF VAREF

AA19 VCCIB2 VCCIB2

AA20 PTEM PTEM

AA21 GND GND

AA22 VCC NC

AB1 GND GND

AB2 VCC NC

AB3 NC IO94NSB4V0

AB4 GND GND

AB5 VCC33N VCC33N

AB6 AT0 AT0

AB7 ATRTN0 ATRTN0

AB8 AT1 AT1

AB9 AT2 AT2

AB10 ATRTN1 ATRTN1

AB11 AT3 AT3

AB12 AT6 AT6

AB13 ATRTN3 ATRTN3

AB14 AT7 AT7

AB15 AT8 AT8

AB16 ATRTN4 ATRTN4

AB17 AT9 AT9

AB18 VCC33A VCC33A

AB19 GND GND

AB20 NC IO76NPB2V0

AB21 VCC NC

AB22 GND GND

B1 VCC NC

B2 GND GND

B3 GAA0/IO01NDB0V0 GAA0/IO01NDB0V0

B4 GND GND

FG484

Number AFS600 Function AFS1500 Function

Fusion Family of Mixed Signal FPGAs

Revision 8 4-21

B5 IO05NDB0V0 IO04NDB0V0

B6 IO05PDB0V0 IO04PDB0V0

B7 GND GND

B8 IO10NDB0V1 IO09NDB0V1

B9 IO13PDB0V1 IO11PDB0V1

B10 GND GND

B11 IO17NDB1V0 IO24NDB1V0

B12 IO18NDB1V0 IO26NDB1V0

B13 GND GND

B14 IO21NDB1V0 IO31NDB1V1

B15 IO21PDB1V0 IO31PDB1V1

B16 GND GND

B17 GBC1/IO26PDB1V1 GBC1/IO40PDB1V2

B18 GBA1/IO28PDB1V1 GBA1/IO42PDB1V2

B19 GND GND

B20 VCCPLB VCCPLB

B21 GND GND

B22 VCC NC

C1 IO82PDB4V0 IO121PDB4V0

C2 NC IO122PSB4V0

C3 IO00NDB0V0 IO00NDB0V0

C4 IO00PDB0V0 IO00PDB0V0

C5 VCCIB0 VCCIB0

C6 IO06NDB0V0 IO05NDB0V1

C7 IO06PDB0V0 IO05PDB0V1

C8 VCCIB0 VCCIB0

C9 IO13NDB0V1 IO11NDB0V1

C10 IO11PDB0V1 IO14PDB0V2

C11 VCCIB0 VCCIB0

C12 VCCIB1 VCCIB1

C13 IO20NDB1V0 IO29NDB1V1

C14 IO20PDB1V0 IO29PDB1V1

C15 VCCIB1 VCCIB1

C16 IO25NDB1V1 IO37NDB1V2

C17 GBB0/IO27NDB1V1 GBB0/IO41NDB1V2

FG484

Number AFS600 Function AFS1500 Function

C18 VCCIB1 VCCIB1

C19 VCOMPLB VCOMPLB

C20 GBA2/IO30PDB2V0 GBA2/IO44PDB2V0

C21 NC IO48PSB2V0

C22 GBB2/IO31PDB2V0 GBB2/IO45PDB2V0

D1 IO82NDB4V0 IO121NDB4V0

D2 GND GND

D3 IO83NDB4V0 IO123NDB4V0

D4 GAC2/IO83PDB4V0 GAC2/IO123PDB4V0

D5 GAA2/IO85PDB4V0 GAA2/IO125PDB4V0

D6 GAC0/IO03NDB0V0 GAC0/IO03NDB0V0

D7 GAC1/IO03PDB0V0 GAC1/IO03PDB0V0

D8 IO09NDB0V1 IO10NDB0V1

D9 IO09PDB0V1 IO10PDB0V1

D10 IO11NDB0V1 IO14NDB0V2

D11 IO16NDB1V0 IO23NDB1V0

D12 IO16PDB1V0 IO23PDB1V0

D13 NC IO32NPB1V1

D14 IO23NDB1V1 IO34NDB1V1

D15 IO23PDB1V1 IO34PDB1V1

D16 IO25PDB1V1 IO37PDB1V2

D17 GBB1/IO27PDB1V1 GBB1/IO41PDB1V2

D18 VCCIB2 VCCIB2

D19 NC IO47PPB2V0

D20 IO30NDB2V0 IO44NDB2V0

D21 GND GND

D22 IO31NDB2V0 IO45NDB2V0

E1 IO81NDB4V0 IO120NDB4V0

E2 IO81PDB4V0 IO120PDB4V0

E3 VCCIB4 VCCIB4

E4 GAB2/IO84PDB4V0 GAB2/IO124PDB4V0

E5 IO85NDB4V0 IO125NDB4V0

E6 GND GND

E7 VCCIB0 VCCIB0

E8 NC IO08NDB0V1

FG484

Number AFS600 Function AFS1500 Function

Package Pin Assignments

4-22 Revision 8

E9 NC IO08PDB0V1

E10 GND GND

E11 IO15NDB1V0 IO22NDB1V0

E12 IO15PDB1V0 IO22PDB1V0

E13 GND GND

E14 NC IO32PPB1V1

E15 NC IO36NPB1V2

E16 VCCIB1 VCCIB1

E17 GND GND

E18 NC IO47NPB2V0

E19 IO33PDB2V0 IO49PDB2V0

E20 VCCIB2 VCCIB2

E21 IO32NDB2V0 IO46NDB2V0

E22 GBC2/IO32PDB2V0 GBC2/IO46PDB2V0

F1 IO80NDB4V0 IO118NDB4V0

F2 IO80PDB4V0 IO118PDB4V0

F3 NC IO119NSB4V0

F4 IO84NDB4V0 IO124NDB4V0

F5 GND GND

F6 VCOMPLA VCOMPLA

F7 VCCPLA VCCPLA

F8 VCCIB0 VCCIB0

F9 IO08NDB0V1 IO12NDB0V1

F10 IO08PDB0V1 IO12PDB0V1

F11 VCCIB0 VCCIB0

F12 VCCIB1 VCCIB1

F13 IO22NDB1V0 IO30NDB1V1

F14 IO22PDB1V0 IO30PDB1V1

F15 VCCIB1 VCCIB1

F16 NC IO36PPB1V2

F17 NC IO38NPB1V2

F18 GND GND

F19 IO33NDB2V0 IO49NDB2V0

F20 IO34PDB2V0 IO50PDB2V0

F21 IO34NDB2V0 IO50NDB2V0

FG484

Number AFS600 Function AFS1500 Function

F22 IO35PDB2V0 IO51PDB2V0

G1 IO77PDB4V0 IO115PDB4V0

G2 GND GND

G3 IO78NDB4V0 IO116NDB4V0

G4 IO78PDB4V0 IO116PDB4V0

G5 VCCIB4 VCCIB4

G6 NC IO117PDB4V0

G7 VCCIB4 VCCIB4

G8 GND GND

G9 IO04NDB0V0 IO06NDB0V1

G10 IO04PDB0V0 IO06PDB0V1

G11 IO12NDB0V1 IO16NDB0V2

G12 IO12PDB0V1 IO16PDB0V2

G13 NC IO28NDB1V1

G14 NC IO28PDB1V1

G15 GND GND

G16 NC IO38PPB1V2

G17 NC IO53PDB2V0

G18 VCCIB2 VCCIB2

G19 IO36PDB2V0 IO52PDB2V0

G20 IO36NDB2V0 IO52NDB2V0

G21 GND GND

G22 IO35NDB2V0 IO51NDB2V0

H1 IO77NDB4V0 IO115NDB4V0

H2 IO76PDB4V0 IO113PDB4V0

H3 VCCIB4 VCCIB4

H4 IO79NDB4V0 IO114NDB4V0

H5 IO79PDB4V0 IO114PDB4V0

H6 NC IO117NDB4V0

H7 GND GND

H8 VCC VCC

H9 VCCIB0 VCCIB0

H10 GND GND

H11 VCCIB0 VCCIB0

H12 VCCIB1 VCCIB1

FG484

Number AFS600 Function AFS1500 Function

Fusion Family of Mixed Signal FPGAs

Revision 8 4-23

H13 GND GND

H14 VCCIB1 VCCIB1

H15 GND GND

H16 GND GND

H17 NC IO53NDB2V0

H18 IO38PDB2V0 IO57PDB2V0

H19 GCA2/IO39PDB2V0 GCA2/IO59PDB2V0

H20 VCCIB2 VCCIB2

H21 IO37NDB2V0 IO54NDB2V0

H22 IO37PDB2V0 IO54PDB2V0

J1 NC IO112PPB4V0

J2 IO76NDB4V0 IO113NDB4V0

J3 GFB2/IO74PDB4V0 GFB2/IO109PDB4V0

J4 GFA2/IO75PDB4V0 GFA2/IO110PDB4V0

J5 NC IO112NPB4V0

J6 NC IO104PDB4V0

J7 NC IO111PDB4V0

J8 VCCIB4 VCCIB4

J9 GND GND

J10 VCC VCC

J11 GND GND

J12 VCC VCC

J13 GND GND

J14 VCC VCC

J15 VCCIB2 VCCIB2

J16 GCB2/IO40PDB2V0 GCB2/IO60PDB2V0

J17 NC IO58NDB2V0

J18 IO38NDB2V0 IO57NDB2V0

J19 IO39NDB2V0 IO59NDB2V0

J20 GCC2/IO41PDB2V0 GCC2/IO61PDB2V0

J21 NC IO55PSB2V0

J22 IO42PDB2V0 IO56PDB2V0

K1 GFC2/IO73PDB4V0 GFC2/IO108PDB4V0

K2 GND GND

K3 IO74NDB4V0 IO109NDB4V0

FG484

Number AFS600 Function AFS1500 Function

K4 IO75NDB4V0 IO110NDB4V0

K5 GND GND

K6 NC IO104NDB4V0

K7 NC IO111NDB4V0

K8 GND GND

K9 VCC VCC

K10 GND GND

K11 VCC VCC

K12 GND GND

K13 VCC VCC

K14 GND GND

K15 GND GND

K16 IO40NDB2V0 IO60NDB2V0

K17 NC IO58PDB2V0

K18 GND GND

K19 NC IO68NPB2V0

K20 IO41NDB2V0 IO61NDB2V0

K21 GND GND

K22 IO42NDB2V0 IO56NDB2V0

L1 IO73NDB4V0 IO108NDB4V0

L2 VCCOSC VCCOSC

L3 VCCIB4 VCCIB4

L4 XTAL2 XTAL2

L5 GFC1/IO72PDB4V0 GFC1/IO107PDB4V0

L6 VCCIB4 VCCIB4

L7 GFB1/IO71PDB4V0 GFB1/IO106PDB4V0

L8 VCCIB4 VCCIB4

L9 GND GND

L10 VCC VCC

L11 GND GND

L12 VCC VCC

L13 GND GND

L14 VCC VCC

L15 VCCIB2 VCCIB2

L16 IO48PDB2V0 IO70PDB2V0

FG484

Number AFS600 Function AFS1500 Function

Package Pin Assignments

4-24 Revision 8

L17 VCCIB2 VCCIB2

L18 IO46PDB2V0 IO69PDB2V0

L19 GCA1/IO45PDB2V0 GCA1/IO64PDB2V0

L20 VCCIB2 VCCIB2

L21 GCC0/IO43NDB2V0 GCC0/IO62NDB2V0

L22 GCC1/IO43PDB2V0 GCC1/IO62PDB2V0

M1 NC IO103PDB4V0

M2 XTAL1 XTAL1

M3 VCCIB4 VCCIB4

M4 GNDOSC GNDOSC

M5 GFC0/IO72NDB4V0 GFC0/IO107NDB4V0

M6 VCCIB4 VCCIB4

M7 GFB0/IO71NDB4V0 GFB0/IO106NDB4V0

M8 VCCIB4 VCCIB4

M9 VCC VCC

M10 GND GND

M11 VCC VCC

M12 GND GND

M13 VCC VCC

M14 GND GND

M15 VCCIB2 VCCIB2

M16 IO48NDB2V0 IO70NDB2V0

M17 VCCIB2 VCCIB2

M18 IO46NDB2V0 IO69NDB2V0

M19 GCA0/IO45NDB2V0 GCA0/IO64NDB2V0

M20 VCCIB2 VCCIB2

M21 GCB0/IO44NDB2V0 GCB0/IO63NDB2V0

M22 GCB1/IO44PDB2V0 GCB1/IO63PDB2V0

N1 NC IO103NDB4V0

N2 GND GND

N3 IO68PDB4V0 IO101PDB4V0

N4 NC IO100NPB4V0

N5 GND GND

N6 NC IO99PDB4V0

N7 NC IO97PDB4V0

FG484

Number AFS600 Function AFS1500 Function

N8 GND GND

N9 GND GND

N10 VCC VCC

N11 GND GND

N12 VCC VCC

N13 GND GND

N14 VCC VCC

N15 GND GND

N16 GDB2/IO56PDB2V0 GDB2/IO83PDB2V0

N17 NC IO78PDB2V0

N18 GND GND

N19 IO47NDB2V0 IO72NDB2V0

N20 IO47PDB2V0 IO72PDB2V0

N21 GND GND

N22 IO49PDB2V0 IO71PDB2V0

P1 GFA1/IO70PDB4V0 GFA1/IO105PDB4V0

P2 GFA0/IO70NDB4V0 GFA0/IO105NDB4V0

P3 IO68NDB4V0 IO101NDB4V0

P4 IO65PDB4V0 IO96PDB4V0

P5 IO65NDB4V0 IO96NDB4V0

P6 NC IO99NDB4V0

P7 NC IO97NDB4V0

P8 VCCIB4 VCCIB4

P9 VCC VCC

P10 GND GND

P11 VCC VCC

P12 GND GND

P13 VCC VCC

P14 GND GND

P15 VCCIB2 VCCIB2

P16 IO56NDB2V0 IO83NDB2V0

P17 NC IO78NDB2V0

P18 GDA1/IO54PDB2V0 GDA1/IO81PDB2V0

P19 GDB1/IO53PDB2V0 GDB1/IO80PDB2V0

P20 IO51NDB2V0 IO73NDB2V0

FG484

Number AFS600 Function AFS1500 Function

Fusion Family of Mixed Signal FPGAs

Revision 8 4-25

P21 IO51PDB2V0 IO73PDB2V0

P22 IO49NDB2V0 IO71NDB2V0

R1 IO69PDB4V0 IO102PDB4V0

R2 IO69NDB4V0 IO102NDB4V0

R3 VCCIB4 VCCIB4

R4 IO64PDB4V0 IO91PDB4V0

R5 IO64NDB4V0 IO91NDB4V0

R6 NC IO92PDB4V0

R7 GND GND

R8 GND GND

R9 VCC33A VCC33A

R10 GNDA GNDA

R11 VCC33A VCC33A

R12 GNDA GNDA

R13 VCC33A VCC33A

R14 GNDA GNDA

R15 VCC VCC

R16 GND GND

R17 NC IO74NDB2V0

R18 GDA0/IO54NDB2V0 GDA0/IO81NDB2V0

R19 GDB0/IO53NDB2V0 GDB0/IO80NDB2V0

R20 VCCIB2 VCCIB2

R21 IO50NDB2V0 IO75NDB2V0

R22 IO50PDB2V0 IO75PDB2V0

T1 NC IO100PPB4V0

T2 GND GND

T3 IO66PDB4V0 IO95PDB4V0

T4 IO66NDB4V0 IO95NDB4V0

T5 VCCIB4 VCCIB4

T6 NC IO92NDB4V0

T7 GNDNVM GNDNVM

T8 GNDA GNDA

T9 NC NC

T10 AV4 AV4

T11 NC NC

FG484

Number AFS600 Function AFS1500 Function

T12 AV5 AV5

T13 AC5 AC5

T14 NC NC

T15 GNDA GNDA

T16 NC IO77PPB2V0

T17 NC IO74PDB2V0

T18 VCCIB2 VCCIB2

T19 IO55NDB2V0 IO82NDB2V0

T20 GDA2/IO55PDB2V0 GDA2/IO82PDB2V0

T21 GND GND

T22 GDC1/IO52PDB2V0 GDC1/IO79PDB2V0

U1 IO67PDB4V0 IO98PDB4V0

U2 IO67NDB4V0 IO98NDB4V0

U3 GEC1/IO63PDB4V0 GEC1/IO90PDB4V0

U4 GEC0/IO63NDB4V0 GEC0/IO90NDB4V0

U5 GND GND

U6 VCCNVM VCCNVM

U7 VCCIB4 VCCIB4

U8 VCC15A VCC15A

U9 GNDA GNDA

U10 AC4 AC4

U11 VCC33A VCC33A

U12 GNDA GNDA

U13 AG5 AG5

U14 GNDA GNDA

U15 PUB PUB

U16 VCCIB2 VCCIB2

U17 TDI TDI

U18 GND GND

U19 IO57NDB2V0 IO84NDB2V0

U20 GDC2/IO57PDB2V0 GDC2/IO84PDB2V0

U21 NC IO77NPB2V0

U22 GDC0/IO52NDB2V0 GDC0/IO79NDB2V0

V1 GEB1/IO62PDB4V0 GEB1/IO89PDB4V0

V2 GEB0/IO62NDB4V0 GEB0/IO89NDB4V0

FG484

Number AFS600 Function AFS1500 Function

Package Pin Assignments

4-26 Revision 8

V3 VCCIB4 VCCIB4

V4 GEA1/IO61PDB4V0 GEA1/IO88PDB4V0

V5 GEA0/IO61NDB4V0 GEA0/IO88NDB4V0

V6 GND GND

V7 VCC33PMP VCC33PMP

V8 NC NC

V9 VCC33A VCC33A

V10 AG4 AG4

V11 AT4 AT4

V12 ATRTN2 ATRTN2

V13 AT5 AT5

V14 VCC33A VCC33A

V15 NC NC

V16 VCC33A VCC33A

V17 GND GND

V18 TMS TMS

V19 VJTAG VJTAG

V20 VCCIB2 VCCIB2

V21 TRST TRST

V22 TDO TDO

W1 NC IO93PDB4V0

W2 GND GND

W3 NC IO93NDB4V0

W4 GEB2/IO59PDB4V0 GEB2/IO86PDB4V0

W5 IO59NDB4V0 IO86NDB4V0

W6 AV0 AV0

W7 GNDA GNDA

W8 AV1 AV1

W9 AV2 AV2

W10 GNDA GNDA

W11 AV3 AV3

W12 AV6 AV6

W13 GNDA GNDA

W14 AV7 AV7

W15 AV8 AV8

FG484

Number AFS600 Function AFS1500 Function

W16 GNDA GNDA

W17 AV9 AV9

W18 VCCIB2 VCCIB2

W19 NC IO68PPB2V0

W20 TCK TCK

W21 GND GND

W22 NC IO76PPB2V0

Y1 GEC2/IO60PDB4V0 GEC2/IO87PDB4V0

Y2 IO60NDB4V0 IO87NDB4V0

Y3 GEA2/IO58PDB4V0 GEA2/IO85PDB4V0

Y4 IO58NDB4V0 IO85NDB4V0

Y5 NCAP NCAP

Y6 AC0 AC0

Y7 VCC33A VCC33A

Y8 AC1 AC1

Y9 AC2 AC2

Y10 VCC33A VCC33A

Y11 AC3 AC3

Y12 AC6 AC6

Y13 VCC33A VCC33A

Y14 AC7 AC7

Y15 AC8 AC8

Y16 VCC33A VCC33A

Y17 AC9 AC9

Y18 ADCGNDREF ADCGNDREF

Y19 PTBASE PTBASE

Y20 GNDNVM GNDNVM

Y21 VCCNVM VCCNVM

Y22 VPUMP VPUMP

FG484

Number AFS600 Function AFS1500 Function

Package Pin Assignments

4-27 Revision 8

FG676

Note

For more information on package drawings, see PD3068: Package Mechanical Drawings.

A1 Ball Pad Corner

1234567891011121314151617181920212223242526

Package Pin Assignments

4-28 Revision 8

FG676

Pin Number AFS1500 Function

A1 NC

A2 GND

A3 NC

A4 NC

A5 GND

A6 NC

A7 NC

A8 GND

A9 IO17NDB0V2

A10 IO17PDB0V2

A11 GND

A12 IO18NDB0V2

A13 IO18PDB0V2

A14 IO20NDB0V2

A15 IO20PDB0V2

A16 GND

A17 IO21PDB0V2

A18 IO21NDB0V2

A19 GND

A20 IO39NDB1V2

A21 IO39PDB1V2

A22 GND

A23 NC

A24 NC

A25 GND

A26 NC

AA1 NC

AA2 VCCIB4

AA3 IO93PDB4V0

AA4 GND

AA5 IO93NDB4V0

AA6 GEB2/IO86PDB4V0

AA7 IO86NDB4V0

AA8 AV0

AA9 GNDA

AA10 AV1

AA11 AV2

AA12 GNDA

AA13 AV3

AA14 AV6

AA15 GNDA

AA16 AV7

AA17 AV8

AA18 GNDA

AA19 AV9

AA20 VCCIB2

AA21 IO68PPB2V0

AA22 TCK

AA23 GND

AA24 IO76PPB2V0

AA25 VCCIB2

AA26 NC

AB1 GND

AB2 NC

AB3 GEC2/IO87PDB4V0

AB4 IO87NDB4V0

AB5 GEA2/IO85PDB4V0

AB6 IO85NDB4V0

AB7 NCAP

AB8 AC0

AB9 VCC33A

AB10 AC1

AB11 AC2

AB12 VCC33A

AB13 AC3

AB14 AC6

AB15 VCC33A

AB16 AC7

AB17 AC8

AB18 VCC33A

AB19 AC9

AB20 ADCGNDREF

FG676

Pin Number AFS1500 Function

AB21 PTBASE

AB22 GNDNVM

AB23 VCCNVM

AB24 VPUMP

AB25 NC

AB26 GND

AC1 NC

AC2 NC

AC3 NC

AC4 GND

AC5 VCCIB4

AC6 VCCIB4

AC7 PCAP

AC8 AG0

AC9 GNDA

AC10 AG1

AC11 AG2

AC12 GNDA

AC13 AG3

AC14 AG6

AC15 GNDA

AC16 AG7

AC17 AG8

AC18 GNDA

AC19 AG9

AC20 VAREF

AC21 VCCIB2

AC22 PTEM

AC23 GND

AC24 NC

AC25 NC

AC26 NC

AD1 NC

AD2 NC

AD3 GND

AD4 NC

FG676

Pin Number AFS1500 Function

Fusion Family of Mixed Signal FPGAs

Revision 8 4-29

AD5 IO94NPB4V0

AD6 GND

AD7 VCC33N

AD8 AT0

AD9 ATRTN0

AD10 AT1

AD11 AT2

AD12 ATRTN1

AD13 AT3

AD14 AT6

AD15 ATRTN3

AD16 AT7

AD17 AT8

AD18 ATRTN4

AD19 AT9

AD20 VCC33A

AD21 GND

AD22 IO76NPB2V0

AD23 NC

AD24 GND

AD25 NC

AD26 NC

AE1 GND

AE2 GND

AE3 NC

AE4 NC

AE5 NC

AE6 NC

AE7 NC

AE8 NC

AE9 GNDA

AE10 NC

AE11 NC

AE12 GNDA

AE13 NC

AE14 NC

FG676

Pin Number AFS1500 Function

AE15 GNDA

AE16 NC

AE17 NC

AE18 GNDA

AE19 NC

AE20 NC

AE21 NC

AE22 NC

AE23 NC

AE24 NC

AE25 GND

AE26 GND

AF1 NC

AF2 GND

AF3 NC

AF4 NC

AF5 NC

AF6 NC

AF7 NC

AF8 NC

AF9 VCC33A

AF10 NC

AF11 NC

AF12 VCC33A

AF13 NC

AF14 NC

AF15 VCC33A

AF16 NC

AF17 NC

AF18 VCC33A

AF19 NC

AF20 NC

AF21 NC

AF22 NC

AF23 NC

AF24 NC

FG676

Pin Number AFS1500 Function

AF25 GND

AF26 NC

B1 GND

B2 GND

B3 NC

B4 NC

B5 NC

B6 VCCIB0

B7 NC

B8 NC

B9 VCCIB0

B10 IO15NDB0V2

B11 IO15PDB0V2

B12 VCCIB0

B13 IO19NDB0V2

B14 IO19PDB0V2

B15 VCCIB1

B16 IO25NDB1V0

B17 IO25PDB1V0

B18 VCCIB1

B19 IO33NDB1V1

B20 IO33PDB1V1

B21 VCCIB1

B22 NC

B23 NC

B24 NC

B25 GND

B26 GND

C1 NC

C2 NC

C3 GND

C4 NC

C5 GAA1/IO01PDB0V0

C6 GAB0/IO02NDB0V0

C7 GAB1/IO02PDB0V0

C8 IO07NDB0V1

FG676

Pin Number AFS1500 Function

Package Pin Assignments

4-30 Revision 8

C9 IO07PDB0V1

C10 IO09PDB0V1

C11 IO13NDB0V2

C12 IO13PDB0V2

C13 IO24PDB1V0

C14 IO26PDB1V0

C15 IO27NDB1V1

C16 IO27PDB1V1

C17 IO35NDB1V2

C18 IO35PDB1V2

C19 GBC0/IO40NDB1V2

C20 GBA0/IO42NDB1V2

C21 IO43NDB1V2

C22 IO43PDB1V2

C23 NC

C24 GND

C25 NC

C26 NC

D1 NC

D2 NC

D3 NC

D4 GND

D5 GAA0/IO01NDB0V0

D6 GND

D7 IO04NDB0V0

D8 IO04PDB0V0

D9 GND

D10 IO09NDB0V1

D11 IO11PDB0V1

D12 GND

D13 IO24NDB1V0

D14 IO26NDB1V0

D15 GND

D16 IO31NDB1V1

D17 IO31PDB1V1

D18 GND

FG676

Pin Number AFS1500 Function

D19 GBC1/IO40PDB1V2

D20 GBA1/IO42PDB1V2

D21 GND

D22 VCCPLB

D23 GND

D24 NC

D25 NC

D26 NC

E1 GND

E2 IO122NPB4V0

E3 IO121PDB4V0

E4 IO122PPB4V0

E5 IO00NDB0V0

E6 IO00PDB0V0

E7 VCCIB0

E8 IO05NDB0V1

E9 IO05PDB0V1

E10 VCCIB0

E11 IO11NDB0V1

E12 IO14PDB0V2

E13 VCCIB0

E14 VCCIB1

E15 IO29NDB1V1

E16 IO29PDB1V1

E17 VCCIB1

E18 IO37NDB1V2

E19 GBB0/IO41NDB1V2

E20 VCCIB1

E21 VCOMPLB

E22 GBA2/IO44PDB2V0

E23 IO48PPB2V0

E24 GBB2/IO45PDB2V0

E25 NC

E26 GND

F1 NC

F2 VCCIB4

FG676

Pin Number AFS1500 Function

F3 IO121NDB4V0

F4 GND

F5 IO123NDB4V0

F6 GAC2/IO123PDB4V0

F7 GAA2/IO125PDB4V0

F8 GAC0/IO03NDB0V0

F9 GAC1/IO03PDB0V0

F10 IO10NDB0V1

F11 IO10PDB0V1

F12 IO14NDB0V2

F13 IO23NDB1V0

F14 IO23PDB1V0

F15 IO32NPB1V1

F16 IO34NDB1V1

F17 IO34PDB1V1

F18 IO37PDB1V2

F19 GBB1/IO41PDB1V2

F20 VCCIB2

F21 IO47PPB2V0

F22 IO44NDB2V0

F23 GND

F24 IO45NDB2V0

F25 VCCIB2

F26 NC

G1 NC

G2 IO119PPB4V0

G3 IO120NDB4V0

G4 IO120PDB4V0

G5 VCCIB4

G6 GAB2/IO124PDB4V0

G7 IO125NDB4V0

G8 GND

G9 VCCIB0

G10 IO08NDB0V1

G11 IO08PDB0V1

G12 GND

FG676

Pin Number AFS1500 Function

Fusion Family of Mixed Signal FPGAs

Revision 8 4-31

G13 IO22NDB1V0

G14 IO22PDB1V0

G15 GND

G16 IO32PPB1V1

G17 IO36NPB1V2

G18 VCCIB1

G19 GND

G20 IO47NPB2V0

G21 IO49PDB2V0

G22 VCCIB2

G23 IO46NDB2V0

G24 GBC2/IO46PDB2V0

G25 IO48NPB2V0

G26 NC

H1 GND

H2 NC

H3 IO118NDB4V0

H4 IO118PDB4V0

H5 IO119NPB4V0

H6 IO124NDB4V0

H7 GND

H8 VCOMPLA

H9 VCCPLA

H10 VCCIB0

H11 IO12NDB0V1

H12 IO12PDB0V1

H13 VCCIB0

H14 VCCIB1

H15 IO30NDB1V1

H16 IO30PDB1V1

H17 VCCIB1

H18 IO36PPB1V2

H19 IO38NPB1V2

H20 GND

H21 IO49NDB2V0

H22 IO50PDB2V0

FG676

Pin Number AFS1500 Function

H23 IO50NDB2V0

H24 IO51PDB2V0

H25 NC

H26 GND

J1 NC

J2 VCCIB4

J3 IO115PDB4V0

J4 GND

J5 IO116NDB4V0

J6 IO116PDB4V0

J7 VCCIB4

J8 IO117PDB4V0

J9 VCCIB4

J10 GND

J11 IO06NDB0V1

J12 IO06PDB0V1

J13 IO16NDB0V2

J14 IO16PDB0V2

J15 IO28NDB1V1

J16 IO28PDB1V1

J17 GND

J18 IO38PPB1V2

J19 IO53PDB2V0

J20 VCCIB2

J21 IO52PDB2V0

J22 IO52NDB2V0

J23 GND

J24 IO51NDB2V0

J25 VCCIB2

J26 NC

K1 NC

K2 NC

K3 IO115NDB4V0

K4 IO113PDB4V0

K5 VCCIB4

K6 IO114NDB4V0

FG676

Pin Number AFS1500 Function

K7 IO114PDB4V0

K8 IO117NDB4V0

K9 GND

K10 VCC

K11 VCCIB0

K12 GND

K13 VCCIB0

K14 VCCIB1

K15 GND

K16 VCCIB1

K17 GND

K18 GND

K19 IO53NDB2V0

K20 IO57PDB2V0

K21 GCA2/IO59PDB2V0

K22 VCCIB2

K23 IO54NDB2V0

K24 IO54PDB2V0

K25 NC

K26 NC

L1 GND

L2 NC

L3 IO112PPB4V0

L4 IO113NDB4V0

L5 GFB2/IO109PDB4V0

L6 GFA2/IO110PDB4V0

L7 IO112NPB4V0

L8 IO104PDB4V0

L9 IO111PDB4V0

L10 VCCIB4

L11 GND

L12 VCC

L13 GND

L14 VCC

L15 GND

L16 VCC

FG676

Pin Number AFS1500 Function

Package Pin Assignments

4-32 Revision 8

L17 VCCIB2

L18 GCB2/IO60PDB2V0

L19 IO58NDB2V0

L20 IO57NDB2V0

L21 IO59NDB2V0

L22 GCC2/IO61PDB2V0

L23 IO55PPB2V0

L24 IO56PDB2V0

L25 IO55NPB2V0

L26 GND

M1 NC

M2 VCCIB4

M3 GFC2/IO108PDB4V0

M4 GND

M5 IO109NDB4V0

M6 IO110NDB4V0

M7 GND

M8 IO104NDB4V0

M9 IO111NDB4V0

M10 GND

M11 VCC

M12 GND

M13 VCC

M14 GND

M15 VCC

M16 GND

M17 GND

M18 IO60NDB2V0

M19 IO58PDB2V0

M20 GND

M21 IO68NPB2V0

M22 IO61NDB2V0

M23 GND

M24 IO56NDB2V0

M25 VCCIB2

M26 IO65PDB2V0

FG676

Pin Number AFS1500 Function

N1 NC

N2 NC

N3 IO108NDB4V0

N4 VCCOSC

N5 VCCIB4

N6 XTAL2

N7 GFC1/IO107PDB4V0

N8 VCCIB4

N9 GFB1/IO106PDB4V0

N10 VCCIB4

N11 GND

N12 VCC

N13 GND

N14 VCC

N15 GND

N16 VCC

N17 VCCIB2

N18 IO70PDB2V0

N19 VCCIB2

N20 IO69PDB2V0

N21 GCA1/IO64PDB2V0

N22 VCCIB2

N23 GCC0/IO62NDB2V0

N24 GCC1/IO62PDB2V0

N25 IO66PDB2V0

N26 IO65NDB2V0

P1 NC

P2 NC

P3 IO103PDB4V0

P4 XTAL1

P5 VCCIB4

P6 GNDOSC

P7 GFC0/IO107NDB4V0

P8 VCCIB4

P9 GFB0/IO106NDB4V0

P10 VCCIB4

FG676

Pin Number AFS1500 Function

P11 VCC

P12 GND

P13 VCC

P14 GND

P15 VCC

P16 GND

P17 VCCIB2

P18 IO70NDB2V0

P19 VCCIB2

P20 IO69NDB2V0

P21 GCA0/IO64NDB2V0

P22 VCCIB2

P23 GCB0/IO63NDB2V0

P24 GCB1/IO63PDB2V0

P25 IO66NDB2V0

P26 IO67PDB2V0

R1 NC

R2 VCCIB4

R3 IO103NDB4V0

R4 GND

R5 IO101PDB4V0

R6 IO100NPB4V0

R7 GND

R8 IO99PDB4V0

R9 IO97PDB4V0

R10 GND

R11 GND

R12 VCC

R13 GND

R14 VCC

R15 GND

R16 VCC

R17 GND

R18 GDB2/IO83PDB2V0

R19 IO78PDB2V0

R20 GND

FG676

Pin Number AFS1500 Function

Fusion Family of Mixed Signal FPGAs

Revision 8 4-33

R21 IO72NDB2V0

R22 IO72PDB2V0

R23 GND

R24 IO71PDB2V0

R25 VCCIB2

R26 IO67NDB2V0

T1 GND

T2 NC

T3 GFA1/IO105PDB4V0

T4 GFA0/IO105NDB4V0

T5 IO101NDB4V0

T6 IO96PDB4V0

T7 IO96NDB4V0

T8 IO99NDB4V0

T9 IO97NDB4V0

T10 VCCIB4

T11 VCC

T12 GND

T13 VCC

T14 GND

T15 VCC

T16 GND

T17 VCCIB2

T18 IO83NDB2V0

T19 IO78NDB2V0

T20 GDA1/IO81PDB2V0

T21 GDB1/IO80PDB2V0

T22 IO73NDB2V0

T23 IO73PDB2V0

T24 IO71NDB2V0

T25 NC

T26 GND

U1 NC

U2 NC

U3 IO102PDB4V0

U4 IO102NDB4V0

FG676

Pin Number AFS1500 Function

U5 VCCIB4

U6 IO91PDB4V0

U7 IO91NDB4V0

U8 IO92PDB4V0

U9 GND

U10 GND

U11 VCC33A

U12 GNDA

U13 VCC33A

U14 GNDA

U15 VCC33A

U16 GNDA

U17 VCC

U18 GND

U19 IO74NDB2V0

U20 GDA0/IO81NDB2V0

U21 GDB0/IO80NDB2V0

U22 VCCIB2

U23 IO75NDB2V0

U24 IO75PDB2V0

U25 NC

U26 NC

V1 NC

V2 VCCIB4

V3 IO100PPB4V0

V4 GND

V5 IO95PDB4V0

V6 IO95NDB4V0

V7 VCCIB4

V8 IO92NDB4V0

V9 GNDNVM

V10 GNDA

V11 NC

V12 AV4

V13 NC

V14 AV5

FG676

Pin Number AFS1500 Function

V15 AC5

V16 NC

V17 GNDA

V18 IO77PPB2V0

V19 IO74PDB2V0

V20 VCCIB2

V21 IO82NDB2V0

V22 GDA2/IO82PDB2V0

V23 GND

V24 GDC1/IO79PDB2V0

V25 VCCIB2

V26 NC

W1 GND

W2 IO94PPB4V0

W3 IO98PDB4V0

W4 IO98NDB4V0

W5 GEC1/IO90PDB4V0

W6 GEC0/IO90NDB4V0

W7 GND

W8 VCCNVM

W9 VCCIB4

W10 VCC15A

W11 GNDA

W12 AC4

W13 VCC33A

W14 GNDA

W15 AG5

W16 GNDA

W17 PUB

W18 VCCIB2

W19 TDI

W20 GND

W21 IO84NDB2V0

W22 GDC2/IO84PDB2V0

W23 IO77NPB2V0

W24 GDC0/IO79NDB2V0

FG676

Pin Number AFS1500 Function

Package Pin Assignments

4-34 Revision 8

W25 NC

W26 GND

Y1 NC

Y2 NC

Y3 GEB1/IO89PDB4V0

Y4 GEB0/IO89NDB4V0

Y5 VCCIB4

Y6 GEA1/IO88PDB4V0

Y7 GEA0/IO88NDB4V0

Y8 GND

Y9 VCC33PMP

Y10 NC

Y11 VCC33A

Y12 AG4

Y13 AT4

Y14 ATRTN2

Y15 AT5

Y16 VCC33A

Y17 NC

Y18 VCC33A

Y19 GND

Y20 TMS

Y21 VJTAG

Y22 VCCIB2

Y23 TRST

Y24 TDO

Y25 NC

Y26 NC

FG676

Pin Number AFS1500 Function

Revision 8 5-1

5 – Datasheet Information

List of Changes

The following table lists critical changes that were made in each revision of the Fusion datasheet.

Revision Changes Table

Revision 8

(May 2018)

In "Specifying I/O States During Programming", the version of the software, v9.0 is

removed to write Libero SoC, as Fusion family is supported in the Libero SoC (SAR

73296).

1-9

In tables,Ta ble 2 - 78,Tab le 2-7 9 and Ta b le 2- 8 0, “3” is edited to a tick mark, to show

the I/O standards with available drive and slew settings (SAR 70900).

2-152

The description for “LOCKREQUEST” is edited in "LOCKREQUEST" section (SAR

25423).

2-44

A note is added to explain data corruption in SRAM block, when setup and hold

requirements are violated on address inputs under "Clocking"(SAR 93618).

2-61

A note is added where ever it is applicable in the datasheet that the package PQ208

is discontinued (SAR 76873).

A note is added in "Package Pin Assignments" to direct the user to PD3068:

Package Mechanical Drawings (SAR 76874)

4-1

Revision 7

(May 2016)

Note added for discontinuance of PQ208 package to the "Package I/Os: Single-

/Double-Ended (Analog)" table, "Product Ordering Codes", and "Temperature Grade

Offerings" table (SAR).

1-II, 1-III,

and 1-IV

Updated Figure 2-42 (SAR 61872). 2-51

Revision 6

(March 2014)

Note added for the discontinuance of QN108 and QN180 packages to the "Package

I/Os: Single-/Double-Ended (Analog)" table and the "Temperature Grade Offerings"

table (SAR 55113, PDN 1306).

II and IV

Updated details about page programming time in the "Program Operation" section

(SAR 49291).

2-46

ADC_START changed to ADCSTART in the "ADC Operation" section (SAR 44104). 2-104

Revision 5

(January 2014)

Calibrated offset values (AFS090, AFS250) of the external temperature monitor in

Table 2-49 • Analog Channel Specifications have been updated (SAR 51464).

2-117

Specifications for the internal temperature monitor in

Table 2-49 • Analog Channel Specifications have been updated (SAR 50870).

2-117

Fusion Family of Mixed Signal FPGAs

Revision 8 5-2

Revision 4

(January 2013)

The "Product Ordering Codes" section has been updated to mention “Y” as “Blank”

mentioning “Device Does Not Include License to Implement IP Based on the

Cryptography Research, Inc. (CRI) Patent Portfolio” (SAR 43177).

III

The note in Table 2-12 • Fusion CCC/PLL Specification referring the reader to

SmartGen was revised to refer instead to the online help associated with the core

(SAR 42563).

2-28

Table 2-49 • Analog Channel Specifications was modified to update the uncalibrated

offset values (AFS250) of the external and internal temperature monitors (SAR

43134).

2-117

In Table 2-57 • Prescaler Control Truth Table—AV (x = 0), AC (x = 1), and AT (x = 3),

changed the column heading from 'Full-Scale Voltage' to 'Full Scale Voltage in 10-Bit

Mode', and added and updated Notes as required (SAR 20812).

2-130

The values for the Speed Grade (-1 and Std.) for FDDRIMAX (Table 2-180 • Input

DDR Propagation Delays) and values for the Speed Grade (-2 and Std.) for

FDDOMAX (Table 2-182 • Output DDR Propagation Delays) had been inadvertently

interchanged. This has been rectified (SAR 38514).

2-220,

2-222

Added description about what happens if a user connects VAREF to an external 3.3

V on their board to the "VAREF Analog Reference Voltage" section (SAR 35188).

2-225

Added a note to Table 3-2 • Recommended Operating Conditions1 (SAR 43429):

The programming temperature range supported is Tambient = 0°C to 85°C.

3-3

Added the Package Thermal details for AFS600-PQ208 and AFS250-PQ208 to

Table 3-6 • Package Thermal Resistance (SAR 37816). Deleted the Die Size column

from the table (SAR 43503).

3-7

Libero Integrated Design Environment (IDE) was changed to Libero System-on-Chip

(SoC) throughout the document (SAR 42495).

Live at Power-Up (LAPU) has been replaced with’Instant On’.

Revision 3

(August 2012)

Microblade U1AFS250 and U1AFS1500 devices were added to the product tables. I – IV

A sentence pertaining to the analog I/Os was added to the "Specifying I/O States

During Programming" section (SAR 34831).

1-9

Revision Changes Table

Datasheet Information

5-3 Revision 8

Revision 3

(continued)

The "RC Oscillator" section was revised to correct a sentence that did not

differentiate accuracy for commercial and industrial temperature ranges, which is

given in Table 2-9 • Electrical Characteristics of RC Oscillator (SAR 33722).

2-19

Figure 2-57 • FIFO Read and Figure 2-58 • FIFO Write are new (SAR 34840). 2-72

The first paragraph of the "Offset" section was removed; it was intended to be

replaced by the paragraph following it (SAR 22647).

2-95

IOL and IOH values for 3.3 V GTL+ and 2.5 V GTL+ were corrected in Table 2-86 •

Summary of Maximum and Minimum DC Input and Output Levels Applicable to

Commercial and Industrial Conditions (SAR 39813).

2-164

The drive strength, IOL, and IOH for 3.3 V GTL and 2.5 V GTL were changed from

25 mA to 20 mA in the following tables (SAR 37373):

Table 2-86 • Summary of Maximum and Minimum DC Input and Output Levels

Applicable to Commercial and Industrial Conditions,

Table 2-92 • Summary of I/O Timing Characteristics – Software Default Settings

Table 2-96 • I/O Output Buffer Maximum Resistances 1

Table 2-138 • Minimum and Maximum DC Input and Output Levels

Table 2-141 • Minimum and Maximum DC Input and Output Levels

2-164

2-167

2-169

2-199

2-200

The following sentence was deleted from the "2.5 V LVCMOS" section (SAR 34800):

“It uses a 5 V–tolerant input buffer and push-pull output buffer.”

2-181

Corrected the inadvertent error in maximum values for LVPECL VIH and VIL and

revised them to “3.6” in Table 2-171 • Minimum and Maximum DC Input and Output

Levels, making these consistent with Table 3-1 • Absolute Maximum Ratings, and

Table 3-4 • Overshoot and Undershoot Limits 1 (SAR 37687).

2-211

The maximum frequency for global clock parameter was removed from Table 2-5 •

AFS1500 Global Resource Timing through Table 2-8 • AFS090 Global Resource

Timing because a frequency on the global is only an indication of what the global

network can do. There are other limiters such as the SRAM, I/Os, and PLL.

SmartTime software should be used to determine the design frequency (SAR

36955).

2-16 to

2-17

Revision 2

(March 2012)

The phrase “without debug” was removed from the "Soft ARM Cortex-M1 Fusion

Devices (M1)" section (SAR 21390).

The "In-System Programming (ISP) and Security" section, "Security" section, "Flash

Advantages" section, and "Security" section were revised to clarify that although no

existing security measures can give an absolute guarantee, Microsemi FPGAs

implement the best security available in the industry (SAR 34679).

I, 1-2,

2-228

The Y security option and Licensed DPA Logo was added to the "Product Ordering

Codes" section. The trademarked Licensed DPA Logo identifies that a product is

covered by a DPA counter-measures license from Cryptography Research (SAR

34721).

III

The "Specifying I/O States During Programming" section is new (SAR 34693). 1-9

The following information was added before Figure 2-17 • XTLOSC Macro:

In the case where the Crystal Oscillator block is not used, the XTAL1 pin should be

connected to GND and the XTAL2 pin should be left floating (SAR 24119).

2-20

Table 2-12 • Fusion CCC/PLL Specification was updated. A note was added

indicating that when the CCC/PLL core is generated by Microsemi core generator

software, not all delay values of the specified delay increments are available (SAR

34814).

2-28

Revision Changes Table

Fusion Family of Mixed Signal FPGAs

Revision 8 5-4

Revision 2

(continued)

A note was added to Figure 2-27 • Real-Time Counter System (not all the signals are

shown for the AB macro) stating that the user is only required to instantiate the

VRPSM macro if the user wishes to specify PUPO behavior of the voltage regulator

to be different from the default, or employ user logic to shut the voltage regulator off

(SAR 21773).

2-31

VPUMP was incorrectly represented as VPP in several places. This was corrected to

VPUMP in the "Standby and Sleep Mode Circuit Implementation" section and

Table 3-8 • AFS1500 Quiescent Supply Current Characteristics through Table 3-11 •

AFS090 Quiescent Supply Current Characteristics (21963).

2-32, 3-10

Additional information was added to the Flash Memory Block "Write Operation"

section, including an explanation of the fact that a copy-page operation takes no less

than 55 cycles (SAR 26338).

2-45

The "FlashROM" section was revised to refer to Figure 2-46 • FlashROM Timing

Diagram and Table 2-26 • FlashROM Access Time rather than stating 20 MHz as the

maximum FlashROM access clock and 10 ns as the time interval for D0 to become

valid or invalid (SAR 22105).

2-53, 2-54

The following figures were deleted (SAR 29991). Reference was made to a new

application note, Simultaneous Read-Write Operations in Dual-Port SRAM for Flash-

Based cSoCs and FPGAs, which covers these cases in detail (SAR 34862).

Figure 2-55 • Write Access after Write onto Same Address

Figure 2-56 • Read Access after Write onto Same Address

Figure 2-57 • Write Access after Read onto Same Address

The port names in the SRAM "Timing Waveforms", "Timing Characteristics", SRAM

tables, Figure 2-55 • RAM Reset. Applicable to both RAM4K9 and RAM512x18., and

the FIFO "Timing Characteristics" tables were revised to ensure consistency with the

software names (SAR 35753).

2-63,

2-66,

2-65, 2-75

In several places throughout the datasheet, GNDREF was corrected to

ADCGNDREF (SAR 20783):

Figure 2-64 • Analog Block Macro

Table 2-36 • Analog Block Pin Description

"ADC Operation" section

2-77

2-78

2-104

The following note was added below Figure 2-78 • Timing Diagram for the

Temperature Monitor Strobe Signal:

When the IEEE 1149.1 Boundary Scan EXTEST instruction is executed, the AG pad

drive strength ceases and becomes a 1 µA sink into the Fusion device. (SAR

24796).

2-93

The "Analog-to-Digital Converter Block" section was extensively revised,

reorganizing the information and adding the "ADC Theory of Operation" section and

"Acquisition Time or Sample Time Control" section. The "ADC Example" section was

reworked and corrected (SAR 20577).

2-96

Table 2-49 • Analog Channel Specifications was modified to include calibrated and

uncalibrated values for offset (AFS090 and AFS250) for the external and internal

temperature monitors. The "Offset" section was revised accordingly and now

references Table 2-49 • Analog Channel Specifications (SARs 22647, 27015).

2-95,

2-117

The "Intra-Conversion" section and "Injected Conversion" section had definitions

incorrectly interchanged and have been corrected. Figure 2-92 • Intra-Conversion

Timing Diagram and Figure 2-93 • Injected Conversion Timing Diagram were also

incorrectly interchanged and have been replaced correctly. Reference in the figure

notes to EQ 10 has been corrected to EQ 23 (SAR 20547).

2-110,

2-113,

2-113

Revision Changes Table

Datasheet Information

5-5 Revision 8

Revision 2

(continued)

The prescalar range for the 'Analog Input (direct input to ADC)” configurations was

removed as inapplicable for direct inputs. The input resistance for direct inputs is

covered in Table 2-50 • ADC Characteristics in Direct Input Mode (SAR 31201).

2-120

The "Examples" for calibrating accuracy for ADC channels were revised and

corrected to make them consistent with terminology in the associated tables (SARs

36791, 36773).

2-124

A note was added to Table 2-56 • Analog Quad ACM Byte Assignment and the

introductory text for Table 2-66 • Internal Temperature Monitor Control Truth Table,

stating that for the internal temperature monitor to function, Bit 0 of Byte 2 for all 10

Quads must be set (SAR 34418).

2-129,

2-131

tDOUT was corrected to tDIN in Figure 2-116 • Input Buffer Timing Model and Delays

(example) (SAR 37115).

2-161

The formulas in the table notes for Table 2-97 • I/O Weak Pull-Up/Pull-Down

Resistances were corrected (SAR 34751).

2-171

The AC Loading figures in the "Single-Ended I/O Characteristics" section were

updated to match tables in the "Summary of I/O Timing Characteristics – Default I/O

Software Settings" section (SAR 34877).

2-175

The following notes were removed from Table 2-168 • Minimum and Maximum DC

Input and Output Levels (SAR 34808):

±5%

Differential input voltage = ±350 mV

2-209

An incomplete, duplicate sentence was removed from the end of the "GNDAQ

Ground (analog quiet)" pin description (SAR 30185).

2-223

Information about configuration of unused I/Os was added to the "User Pins" section

(SAR 32642).

2-225

The following information was added to the pin description for "XTAL1 Crystal

Oscillator Circuit Input" and "XTAL2 Crystal Oscillator Circuit Input" (SAR 24119).

2-227

The input resistance to ground value in Table 3-3 • Input Resistance of Analog Pads

for Analog Input (direct input to ADC), was corrected from 1 M (typical) to 2 k

(typical) (SAR 34371).

3-4

The Storage Temperature column in Table 3-5 • FPGA Programming, Storage, and

Operating Limits stated Min. TJ twice for commercial and industrial product grades

and has been corrected to Min. TJ and Max. TJ (SAR 29416).

3-5

The reference to guidelines for global spines and VersaTile rows, given in the

"Global Clock Dynamic Contribution—PCLOCK" section, was corrected to the “Spine

Architecture” section of the Global Resources chapter in the Fusion FPGA

Fabric User's Guide (SAR 34741).

3-24

Package names used in the "Package Pin Assignments" section were revised to

match standards given in Package Mechanical Drawings (SAR 36612).

4-1

July 2010 The versioning system for data-sheets has been changed. Datasheets are assigned

a revision number that increments each time the datasheet is revised. The "Fusion

Device Status" table indicates the status for each device in the device family.

N/A

Revision Changes Table

Fusion Family of Mixed Signal FPGAs

Revision 8 5-6

v2.0, Revision 1

(July 2009)

The MicroBlade and Fusion datasheets have been combined. Pigeon Point

information is new.

CoreMP7 support was removed since it is no longer offered.

–F was removed from the datasheet since it is no longer offered.

The operating temperature was changed from ambient to junction to better reflect

actual conditions of operations.

Commercial: 0°C to 85°C

Industrial: –40°C to 100°C

The version number category was changed from Preliminary to Production, which

means the datasheet contains information based on final characterization. The

version number changed from Preliminary v1.7 to v2.0.

N/A

The "Integrated Analog Blocks and Analog I/Os" section was updated to include a

reference to the “Analog System Characteristics” section in the Device Architecture

chapter of the datasheet, which includes Table 2-46 • Analog Channel Specifications

and specific voltage data.

1-4

The phrase "Commercial-Case Conditions" in timing table titles was changed to

"Commercial Temperature Range Conditions."

N/A

The "Crystal Oscillator" section was updated significantly. Please review carefully. 2-20

The "Real-Time Counter (part of AB macro)" section was updated significantly.

Please review carefully.

2-33

There was a typo in Table 2-19 • Flash Memory Block Pin Names for the

ERASEPAGE description; it was the same as DISCARDPAGE. As as a result, the

ERASEPAGE description was updated.

2-40

The tFMAXCLKNVM parameter was updated in Table 2-25 • Flash Memory Block

Timing.

2-52

Table 2-31 • RAM4K9 and Table 2-32 • RAM512X18 were updated. 2-66

In Table 2-36 • Analog Block Pin Description, the Function description for PWRDWN

was changed from “Comparator power-down if 1"

“ADC comparator power-down if 1. When asserted, the ADC will stop functioning,

and the digital portion of the analog block will continue operating. This may result in

invalid status flags from the analog block. Therefore, Microsemi does not

recommend asserting the PWRDWN pin.”

2-78

Figure 2-75 • Gate Driver Example was updated. 2-91

The "ADC Operation" section was updated. Please review carefully. 2-104

Figure 2-92 • Intra-Conversion Timing Diagram and Figure 2-93 • Injected

Conversion Timing Diagram are new.

2-113

The "Typical Performance Characteristics" section is new. 2-115

Table 2-49 • Analog Channel Specifications was significantly updated. 2-117

Table 2-50 • ADC Characteristics in Direct Input Mode was significantly updated. 2-120

In Table 2-52 • Calibrated Analog Channel Accuracy 1,2,3, note 2 was updated. 2-123

In Table 2-53 • Analog Channel Accuracy: Monitoring Standard Positive Voltages,

note 1 was updated.

2-124

In Table 2-54 • ACM Address Decode Table for Analog Quad, bit 89 was removed. 2-126

Revision Changes Table

Datasheet Information

5-7 Revision 8

v2.0, Revision 1

(continued)

The data in the 2.5 V LCMOS and LVCMOS 2.5 V / 5.0 V rows were updated in

Table 2-75 • Fusion Standard and Advanced I/O – Hot-Swap and 5 V Input Tolerance

Capabilities.

2-143

In Table 2-78 • Fusion Standard I/O Standards—OUT_DRIVE Settings, LVCMOS

1.5 V, for OUT_DRIVE 2, was changed from a dash to a check mark.

2-152

The "VCC15A Analog Power Supply (1.5 V)" definition was changed from “A 1.5 V

analog power supply input should be used to provide this input” to “1.5 V clean

analog power supply input for use by the 1.5 V portion of the analog circuitry.”

2-223

In the "VCC33PMP Analog Power Supply (3.3 V)" pin description, the following text

was changed from “VCC33PMP should be powered up before or simultaneously

with VCC33A” to “VCC33PMP should be powered up simultaneously with or after

VCC33A.”

2-223

The "VCCOSC Oscillator Power Supply (3.3 V)" section was updated to include

information about when to power the pin.

2-223

In the "128-Bit AES Decryption" section, FIPS-192 was incorrect and changed to

FIPS-197.

2-228

The note in Table 2-84 • Fusion Standard and Advanced I/O Attributes vs. I/O

Standard Applications was updated.

2-156

For 1.5 V LVCMOS, the VIL and VIH parameters, 0.30 * VCCI was changed to 0.35 *

VCCI and 0.70 * VCCI was changed to 0.65 * VCCI in Table 2-86 • Summary of

Maximum and Minimum DC Input and Output Levels Applicable to Commercial and

Industrial Conditions, Table 2-87 • Summary of Maximum and Minimum DC Input

and Output Levels Applicable to Commercial and Industrial Conditions, and

Table 2-88 • Summary of Maximum and Minimum DC Input and Output Levels

Applicable to Commercial and Industrial Conditions.

In Table 2-87 • Summary of Maximum and Minimum DC Input and Output Levels

Applicable to Commercial and Industrial Conditions, the VIH max column was

updated.

2-164 to

2-165

Table 2-89 • Summary of Maximum and Minimum DC Input Levels Applicable to

Commercial and Industrial Conditions was updated to include notes 3 and 4. The

temperature ranges were also updated in notes 1 and 2.

2-165

The titles in Table 2-92 • Summary of I/O Timing Characteristics – Software Default

Settings to Table 2-94 • Summary of I/O Timing Characteristics – Software Default

Settings were updated to “VCCI = I/O Standard Dependent.”

2-167 to

2-168

Below Table 2-98 • I/O Short Currents IOSH/IOSL, the paragraph was updated to

change 110°C to 100°C and three months was changed to six months.

2-172

Table 2-99 • Short Current Event Duration before Failure was updated to remove

110°C data.

2-174

In Table 2-101 • I/O Input Rise Time, Fall Time, and Related I/O Reliability,

LVTTL/LVCMOS rows were changed from 110°C to 100°C.

2-174

VCC33PMP was added to Table 3-1 • Absolute Maximum Ratings. In addition,

conditions for AV, AC, AG, and AT were also updated.

3-1

VCC33PMP was added to Table 3-2 • Recommended Operating Conditions1. In

addition, conditions for AV, AC, AG, and AT were also updated.

3-3

Table 3-5 • FPGA Programming, Storage, and Operating Limits was updated to

include new data and the temperature ranges were changed. The notes were

removed from the table.

3-5

Revision Changes Table

Fusion Family of Mixed Signal FPGAs

Revision 8 5-8

v2.0, Revision 1

(continued)

Table 3-6 • Package Thermal Resistance was updated to include new data. 3-7

In EQ 4 to EQ 6, the junction temperature was changed from 110°C to 100°C. 3-8 to 3-8

Table 3-8 • AFS1500 Quiescent Supply Current Characteristics through Table 3-11 •

AFS090 Quiescent Supply Current Characteristics are new and have replaced the

Quiescent Supply Current Characteristics (IDDQ) table.

3-10 to

3-16

In Table 3-14 • Different Components Contributing to the Dynamic Power

Consumption in Fusion Devices, the power supply for PAC9 and PAC10 were

changed from VMV/VCC to VCCI.

3-22

In Table 3-15 • Different Components Contributing to the Static Power Consumption

in Fusion Devices, the power supply for PDC7 and PDC8 were changed from

VMV/VCC to VCCI. PDC1 was updated from TBD to 18.

3-23

The "QN108" table was updated to remove the duplicates of pins B12 and B34. 4-2

Preliminary v1.7

(October 2008)

The version number category was changed from Advance to Preliminary, which

means the datasheet contains information based on simulation and/or initial

characterization. The information is believed to be correct, but changes are possible.

For the VIL and VIH parameters, 0.30 * VCCI was changed to 0.35 * VCCI and 0.70

* VCCI was changed to 0.65 * VCCI in Table 2-126 • Minimum and Maximum DC

Input and Output Levels.

2-193

The version number category was changed from Advance to Preliminary, which

means the datasheet contains information based on simulation and/or initial

characterization. The information is believed to be correct, but changes are possible.

N/A

The following updates were made to Table 2-141 • Minimum and Maximum DC Input

and Output Levels:

Temperature Digital Output

213 00 1111 1101

283 01 0001 1011

358 01 0110 0110 – only the digital output was updated.

Temperature 358 remains in the temperature column.

2-200

In Advance v1.2, the "VAREF Analog Reference Voltage" pin description was

significantly updated but the change was not noted in the change table.

2-225

Advance v1.6

(August 2008)

The title of the datasheet changed from Actel Programmable System Chips to Actel

Fusion Mixed Signal FPGAs. In addition, all instances of programmable system chip

were changed to mixed signal FPGA.

N/A

The references to the Peripherals User’s Guide in the "No-Glitch MUX (NGMUX)"

section and "Voltage Regulator Power Supply Monitor (VRPSM)" section were

changed to Fusion Handbook.

2-32, 2-42

Advance v1.5

(July 2008)

The following bullet was updated from High-Voltage Input Tolerance: ±12 V to High-

Voltage Input Tolerance: 10.5 V to 12 V.

The following bullet was updated from Programmable 1, 3, 10, 30 µA and 25 mA

Drive Strengths to Programmable 1, 3, 10, 30 µA and 20 mA Drive Strengths.

Revision Changes Table

Datasheet Information

5-9 Revision 8

Advance v1.5

(continued)

This bullet was added to the “Integrated A/D Converter (ADC) and Analog I/O”

section: ADC Accuracy is Better than 1%

In the "Integrated Analog Blocks and Analog I/Os" section, ±4 LSB was changed to

0.72. The following sentence was deleted:

The input range for voltage signals is from –12 V to +12 V with full-scale output

values from 0.125 V to 16 V.

In addition, 2°C was changed to 3°C:

"One analog input in each quad can be connected to an external temperature

monitor diode and achieves detection accuracy of ±3ºC."

The following sentence was deleted:

The input range for voltage signals is from –12 V to +12 V with full-scale output

values from 0.125 V to 16 V.

1-4

The title of the datasheet changed from Actel Programmable System Chips to Actel

Fusion Mixed Signal FPGAs. In addition, all instances of programmable system chip

were changed to mixed signal FPGA.

N/A

Advance v1.4

(July 2008)

In Table 3-8 · Quiescent Supply Current Characteristics (IDDQ)1, footnote

references were updated for IDC2 and IDC3.

Footnote 3 and 4 were updated and footnote 5 is new.

3-11

Advance v1.3

(July 2008)

The "ADC Description" section was significantly updated. Please review carefully. 2-102

Advance v1.2

(May 2008)

Table 2-25 • Flash Memory Block Timing was significantly updated. 2-55

The "VAREF Analog Reference Voltage" pin description section was significantly

update. Please review it carefully.

2-226

Table 2-45 • ADC Interface Timing was significantly updated. 2-110

Table 2-56 • Direct Analog Input Switch Control Truth Table—AV (x = 0), AC (x = 1),

and AT (x = 3) was significantly updated.

2-131

The following sentence was deleted from the "Voltage Monitor" section:

The Analog Quad inputs are tolerant up to 12 V + 10%.

2-86

The "180-Pin QFN" figure was updated. D1 to D4 are new and the figure was

changed to bottom view. The note below the figure is new.

3-3

Advance v1.1

(May 2008)

The following text was incorrect and therefore deleted:

VCC33A Analog Power Filter

Analog power pin for the analog power supply low-pass filter. An external 100 pF

capacitor should be connected between this pin and ground.

There is still a description of VCC33A on page 2-224.

2-204

Revision Changes Table

Fusion Family of Mixed Signal FPGAs

Revision 8 5-10

Advance v1.0

(January 2008)

All Timing Characteristics tables were updated. For the Differential I/O Standards,

the Standard I/O support tables are new.

N/A

Table 2-3 • Array Coordinates was updated to change the max x and y values 2-9

Table 2-12 • Fusion CCC/PLL Specification was updated. 2-31

A note was added to Table 2-16 · RTC ACM Memory Map.2-37

A reference to the Peripheral’s User’s Guide was added to the "Voltage Regulator

Power Supply Monitor (VRPSM)" section.

2-42

In Table 2-25 • Flash Memory Block Timing, the commercial conditions were

updated.

2-55

In Table 2-26 • FlashROM Access Time, the commercial conditions were missing

and have been added below the title of the table.

2-58

In Table 2-36 • Analog Block Pin Description, the function description was updated

for the ADCRESET.

2-82

In the "Voltage Monitor" section, the following sentence originally had ± 10% and it

was changed to +10%.

The Analog Quad inputs are tolerant up to 12 V + 10%.

In addition, this statement was deleted from the datasheet:

Each I/O will draw power when connected to power (3 mA at 3 V).

2-86

The "Terminology" section is new. 2-88

The "Current Monitor" section was significantly updated. Figure 2-72 • Timing

Diagram for Current Monitor Strobe to Figure 2-74 • Negative Current Monitor and

Table 2-37 • Recommended Resistor for Different Current Range Measurement are

new.

2-90

The "ADC Description" section was updated to add the "Terminology" section.2-93

In the "Gate Driver" section, 25 mA was changed to 20 mA and 1.5 MHz was

changed to 1.3 MHz. In addition, the following sentence was deleted:

The maximum AG pad switching frequency is 1.25 MHz.

2-94

The "Temperature Monitor" section was updated to rewrite most of the text and add

Figure 2-78, Figure 2-79, and Table 2-38 • Temperature Data Format.

2-96

In Table 2-38 • Temperature Data Format, the temperature K column was changed

for 85°C from 538 to 358.

2-98

In Table 2-45 • ADC Interface Timing, "Typical-Case" was changed to "Worst-Case." 2-110

The "ADC Interface Timing" section is new. 2-110

Table 2-46 • Analog Channel Specifications was updated. 2-118

The "VCC15A Analog Power Supply (1.5 V)" section was updated. 2-224

The "VCCPLA/B PLL Supply Voltage" section is new. 2-225

In "VCCNVM Flash Memory Block Power Supply (1.5 V)" section, supply was

changed to supply input.

2-224

The "VCCPLA/B PLL Supply Voltage" pin description was updated to include the

following statement:

Actel recommends tying VCCPLX to VCC and using proper filtering circuits to

decouple VCC noise from PLL.

2-225

The "VCOMPLA/B Ground for West and East PLL" section was updated. 2-225

Revision Changes Table

Datasheet Information

5-11 Revision 8

Advance 1.0

(continued)

In Table 2-47 • ADC Characteristics in Direct Input Mode, the commercial conditions

were updated and note 2 is new.

2-121

The VCC33ACAP signal name was changed to "XTAL1 Crystal Oscillator Circuit

Input".

2-228

Table 2-48 • Uncalibrated Analog Channel Accuracy* is new. 2-123

Table 2-49 • Calibrated Analog Channel Accuracy 1,2,3 is new. 2-124

Table 2-50 • Analog Channel Accuracy: Monitoring Standard Positive Voltages is

new.

2-125

In Table 2-57 • Voltage Polarity Control Truth Table—AV (x = 0), AC (x = 1), and AT

(x = 3)*, the following I/O Bank names were changed:

Hot-Swap changed to Standard

LVDS changed to Advanced

2-131

In Table 2-58 • Prescaler Op Amp Power-Down Truth Table—AV (x = 0), AC (x = 1),

and AT (x = 3), the following I/O Bank names were changed:

Hot-Swap changed to Standard

LVDS changed to Advanced

2-132

In the title of Table 2-64 • I/O Standards Supported by Bank Type, LVDS I/O was

changed to Advanced I/O.

2-134

The title was changed from "Fusion Standard, LVDS, and Standard plus Hot-Swap

I/O" to Table 2-68 • Fusion Standard and Advanced I/O Features. In addition, the

table headings were all updated. The heading used to be Standard and LVDS I/O

and was changed to Advanced I/O. Standard Hot-Swap was changed to just

Standard.

2-136

This sentence was deleted from the "Slew Rate Control and Drive Strength" section:

The Standard hot-swap I/Os do not support slew rate control. In addition, these

references were changed:

• From: Fusion hot-swap I/O (Table 2-69 on page 2-122) To: Fusion Standard I/O

• From: Fusion LVDS I/O (Table 2-70 on page 2-122) To: Fusion Advanced I/O

2-152

The "Cold-Sparing Support" section was significantly updated. 2-143

In the title of Table 2-75 • Fusion Standard I/O Standards—OUT_DRIVE Settings,

Hot-Swap was changed to Standard.

2-153

In the title of Table 2-76 • Fusion Advanced I/O Standards—SLEW and OUT_DRIVE

Settings, LVDS was changed to Advanced.

2-153

In the title of Table 2-81 • Fusion Standard and Advanced I/O Attributes vs. I/O

Standard Applications, LVDS was changed to Advanced.

2-157

In Figure 2-111 • Naming Conventions of Fusion Devices with Three Digital I/O

Banks and Figure 2-112 • Naming Conventions of Fusion Devices with Four I/O

Banks the following names were changed:

Hot-Swap changed to Standard

LVDS changed to Advanced

2-160

The Figure 2-113 • Timing Model was updated. 2-161

In the notes for Table 2-86 • Summary of Maximum and Minimum DC Input Levels

Applicable to Commercial and Industrial Conditions, TJ was changed to TA.

2-166

Revision Changes Table

Fusion Family of Mixed Signal FPGAs

Revision 8 5-12

Advance v1.0

(continued)

This change table states that in the "208-Pin PQFP" table listed under the Advance

v0.8 changes, the AFS090 device had a pin change. That is incorrect. Pin 102 was

updated for AFS250 and AFS600. The function name changed from VCC33ACAP to

VCC33A.

3-8

Advance v0.9

(October 2007)

In the "Package I/Os: Single-/Double-Ended (Analog)" table, the

AFS1500/M7AFS1500 I/O counts were updated for the following devices:

FG484: 223/109

FG676: 252/126

In the "108-Pin QFN" table, the function changed from VCC33ACAP to VCC33A for the

following pin:

B25

3-2

In the "180-Pin QFN" table, the function changed from VCC33ACAP to VCC33A for the

following pins:

AFS090: B29

AFS250: B29

3-4

In the "208-Pin PQFP" table, the function changed from VCC33ACAP to VCC33A for the

following pins:

AFS090: 102

AFS250: 102

3-8

In the "256-Pin FBGA" table, the function changed from VCC33ACAP to VCC33A for the

following pins:

AFS090: T14

AFS250: T14

AFS600: T14

AFS1500: T14

3-12

Advance v0.9

(continued)

In the "484-Pin FBGA" table, the function changed from VCC33ACAP to VCC33A for the

following pins:

AFS600: AB18

AFS1500: AB18

3-20

In the "676-Pin FBGA" table, the function changed from VCC33ACAP to VCC33A for the

following pins:

AFS1500: AD20

3-28

Advance v0.8

(June 2007)

Figure 2-16 • Fusion Clocking Options and the "RC Oscillator" section were updated

to change GND_OSC and VCC_OSC to GNDOSC and VCCOSC.

2-20, 2-21

Figure 2-19 • Fusion CCC Options: Global Buffers with the PLL Macro was updated

to change the positions of OADIVRST and OADIVHALF, and a note was added.

2-25

The "Crystal Oscillator" section was updated to include information about controlling

and enabling/disabling the crystal oscillator.

2-22

Table 2-11 · Electrical Characteristics of the Crystal Oscillator was updated to

change the typical value of IDYNXTAL for 0.032–0.2 MHz to 0.19.

2-24

The "1.5 V Voltage Regulator" section was updated to add "or floating" in the

paragraph stating that an external pull-down is required on TRST to power down the

VR.

2-41

The "1.5 V Voltage Regulator" section was updated to include information on

powering down with the VR.

2-41

Revision Changes Table

Datasheet Information

5-13 Revision 8

Advance v0.8

(continued)

This sentence was updated in the "No-Glitch MUX (NGMUX)" section to delete GLA:

The GLMUXCFG[1:0] configuration bits determine the source of the CLK inputs (i.e.,

internal signal or GLC).

2-32

In Table 2-13 • NGMUX Configuration and Selection Table, 10 and 11 were deleted. 2-32

The method to enable sleep mode was updated for bit 0 in Table 2-16 • RTC

Control/Status Register.

2-38

S2 was changed to D2 in Figure 2-39 • Read Waveform (Pipe Mode, 32-bit access)

for RD[31:0] was updated.

2-51

The definitions for bits 2 and 3 were updated in Table 2-24 • Page Status Bit

Definition.

2-52

Figure 2-46 • FlashROM Timing Diagram was updated. 2-58

Table 2-26 • FlashROM Access Time is new. 2-58

Figure 2-55 • Write Access After Write onto Same Address, Figure 2-56 • Read

Access After Write onto Same Address, and Figure 2-57 • Write Access After Read

onto Same Address are new.

2-68–

2-70

Table 2-31 • RAM4K9 and Table 2-32 • RAM512X18 were updated. 2-71, 2-72

The VAREF and SAMPLE functions were updated in Table 2-36 • Analog Block Pin

Description.

2-82

The title of Figure 2-72 • Timing Diagram for Current Monitor Strobe was updated to

add the word "positive."

2-91

The "Gate Driver" section was updated to give information about the switching rate

in High Current Drive mode.

2-94

The "ADC Description" section was updated to include information about the

SAMPLE and BUSY signals and the maximum frequencies for SYSCLK and

ADCCLK. EQ 2 was updated to add parentheses around the entire expression in the

denominator.

2-102

Table 2-46 · Analog Channel Specifications and Table 2-47 · ADC Characteristics in

Direct Input Mode were updated.

2-118,

2-121

The note was removed from Table 2-55 • Analog Multiplexer Truth Table—AV (x = 0),

AC (x = 1), and AT (x = 3).

2-131

Table 2-63 • Internal Temperature Monitor Control Truth Table is new. 2-132

The "Cold-Sparing Support" section was updated to add information about cases

where current draw can occur.

2-143

Figure 2-104 • Solution 4 was updated. 2-147

Table 2-75 • Fusion Standard I/O Standards—OUT_DRIVE Settings was updated. 2-153

The "GNDA Ground (analog)" section and "GNDAQ Ground (analog quiet)" section

were updated to add information about maximum differential voltage.

2-224

The "VAREF Analog Reference Voltage" section and "VPUMP Programming Supply

Voltage" section were updated.

2-226

The "VCCPLA/B PLL Supply Voltage" section was updated to include information

about the east and west PLLs.

2-225

The VCOMPLF pin description was deleted. N/A

The “Axy Analog Input/Output” section was updated with information about

grounding and floating the pin.

2-226

Revision Changes Table

Fusion Family of Mixed Signal FPGAs

Revision 8 5-14

Advance v0.8

(continued)

The voltage range in the "VPUMP Programming Supply Voltage" section was

updated. The parenthetical reference to "pulled up" was removed from the

statement, "VPUMP can be left floating or can be tied (pulled up) to any voltage

between 0 V and 3.6 V."

2-225

The “ATRTNx Temperature Monitor Return” section was updated with information

about grounding and floating the pin.

2-226

The following text was deleted from the "VREF I/O Voltage Reference" section: (all

digital I/O).

2-225

The "NCAP Negative Capacitor" section and "PCAP Positive Capacitor" section

were updated to include information about the type of capacitor that is required to

connect the two.

2-228

1 µF was changed to 100 pF in the "XTAL1 Crystal Oscillator Circuit Input".2-228

The "Programming" section was updated to include information about VCCOSC.2-229

The VMV pins have now been tied internally with the VCCI pins. N/A

The AFS090"108-Pin QFN" table was updated. 3-2

The AFS090 and AFS250 devices were updated in the "108-Pin QFN" table.3-2

The AFS250 device was updated in the "208-Pin PQFP" table.3-8

The AFS600 device was updated in the "208-Pin PQFP" table.3-8

The AFS090, AFS250, AFS600, and AFS1500 devices were updated in the "256-Pin

FBGA" table.

3-12

The AFS600 and AFS1500 devices were updated in the "484-Pin FBGA" table.3-20

Advance v0.7

(January 2007)

The AFS600 device was updated in the "676-Pin FBGA" table.3-28

The AFS1500 digital I/O count was updated in the "Fusion Family" table.I

The AFS1500 digital I/O count was updated in the "Package I/Os: Single-/Double-

Ended (Analog)" table.

Advance v0.6

(October 2006)

The second paragraph of the "PLL Macro" section was updated to include

information about POWERDOWN.

2-30

The description for bit 0 was updated in Table 2-17 · RTC Control/Status Register.2-38

3.9 was changed to 7.8 in the "Crystal Oscillator (Xtal Osc)" section.2-40.

All function descriptions in Table 2-18 · Signals for VRPSM Macro.2-42

In Table 2-19 • Flash Memory Block Pin Names, the RD[31:0] description was

updated.

2-43

The "RESET" section was updated. 2-61

The "RESET" section was updated. 2-64

Table 2-35 • FIFO was updated. 2-79

The VAREF function description was updated in Table 2-36 • Analog Block Pin

Description.

2-82

The "Voltage Monitor" section was updated to include information about low power

mode and sleep mode.

2-86

The text in the "Current Monitor" section was changed from 2 mV to 1 mV. 2-90

The "Gate Driver" section was updated to include information about forcing 1 V on

the drain.

2-94

Revision Changes Table

Datasheet Information

5-15 Revision 8

Advance v0.6

(continued)

The "Analog-to-Digital Converter Block" section was updated with the following

statement:

"All results are MSB justified in the ADC."

2-99

The information about the ADCSTART signal was updated in the "ADC Description"

section.

2-102

Table 2-46 · Analog Channel Specifications was updated. 2-118

Table 2-47 · ADC Characteristics in Direct Input Mode was updated. 2-121

Table 2-51 • ACM Address Decode Table for Analog Quad was updated. 2-127

In Table 2-53 • Analog Quad ACM Byte Assignment, the Function and Default

Setting for Bit 6 in Byte 3 was updated.

2-130

The "Introduction" section was updated to include information about digital inputs,

outputs, and bibufs.

2-133

In Table 2-69 • Fusion Pro I/O Features, the programmable delay descriptions were

updated for the following features:

Single-ended receiver

Voltage-referenced differential receiver

LVDS/LVPECL differential receiver features

2-137

The "User I/O Naming Convention" section was updated to include "V" and "z"

descriptions

2-159

The "VCC33PMP Analog Power Supply (3.3 V)" section was updated to include

information about avoiding high current draw.

2-224

The "VCCNVM Flash Memory Block Power Supply (1.5 V)" section was updated to

include information about avoiding high current draw.

2-224

The "VMVx I/O Supply Voltage (quiet)" section was updated to include this

statement: VMV and VCCI must be connected to the same power supply and VCCI

pins within a given I/O bank.

2-185

The "PUB Push Button" section was updated to include information about leaving

the pin floating if it is not used.

2-228

The "PTBASE Pass Transistor Base" section was updated to include information

about leaving the pin floating if it is not used.

2-228

The "PTEM Pass Transistor Emitter" section was updated to include information

about leaving the pin floating if it is not used.

2-228

The heading was incorrect in the "208-Pin PQFP" table. It should be AFS250 and not

AFS090.

3-8

Revision Changes Table

Fusion Family of Mixed Signal FPGAs

Revision 8 5-16

Advance v0.5

(June 2006)

The low power modes of operation were updated and clarified. N/A

The AFS1500 digital I/O count was updated in Table 1 • Fusion Family.i

The AFS1500 digital I/O count was updated in the "Package I/Os: Single-/Double-

Ended (Analog)" table.

The "Voltage Regulator Power Supply Monitor (VRPSM)" was updated. 2-36

Figure 2-45 • FlashROM Timing Diagram was updated. 2-53

The "256-Pin FBGA" table for the AFS1500 is new. 3-12

Advance v0.4

(April 2006)

The G was moved in the "Product Ordering Codes" section.III

Advance v0.3

(April 2006)

The "Features and Benefits" section was updated. I

The "Fusion Family" table was updated. I

The "Package I/Os: Single-/Double-Ended (Analog)" table was updated. II

The "Product Ordering Codes" table was updated. III

The "Temperature Grade Offerings" table was updated. IV

The "General Description" section was updated to include ARM information. 1-1

Figure 2-46 • FlashROM Timing Diagram was updated. 2-58

The "FlashROM" section was updated. 2-57

The "RESET" section was updated. 2-61

The "RESET" section was updated. 2-64

Figure 2-27 · Real-Time Counter System was updated. 2-35

Table 2-19 • Flash Memory Block Pin Names was updated. 2-43

Figure 2-33 • Flash Memory Block Diagram was updated to include AUX block

information.

2-45

Figure 2-34 • Flash Memory Block Organization was updated to include AUX block

information.

2-46

The note in the "Program Operation" section was updated. 2-48

Figure 2-76 • Gate Driver Example was updated. 2-95

The "Analog Quad ACM Description" section was updated. 2-130

Information about the maximum pad input frequency was added to the "Gate Driver"

section.

2-94

Figure 2-65 • Analog Block Macro was updated. 2-81

The "Analog Quad" section was updated. 2-84

The "Voltage Monitor" section was updated. 2-86

The "Direct Digital Input" section was updated. 2-89

The "Current Monitor" section was updated. 2-90

Information about the maximum pad input frequency was added to the "Gate Driver"

section.

2-94

Revision Changes Table

Datasheet Information

5-17 Revision 8

Advance v0.3

(continued)

The "Temperature Monitor" section was updated. 2-96

EQ 2 is new. 2-103

The "ADC Description" section was updated. 2-102

Figure 2-16 • Fusion Clocking Options was updated. 2-20

Table 2-46 · Analog Channel Specifications was updated. 2-118

The notes in Table 2-72 • Fusion Standard and Advanced I/O – Hot-Swap and 5 V

Input Tolerance Capabilities were updated.

2-144

The "Simultaneously Switching Outputs and PCB Layout" section is new. 2-149

LVPECL and LVDS were updated in Table 2-81 • Fusion Standard and Advanced I/O

Attributes vs. I/O Standard Applications.

2-157

LVPECL and LVDS were updated in Table 2-82 • Fusion Pro I/O Attributes vs. I/O

Standard Applications.

2-158

The "Timing Model" was updated. 2-161

All voltage-referenced Minimum and Maximum DC Input and Output Level tables

were updated.

N/A

All Timing Characteristic tables were updated N/A

Table 2-83 • Summary of Maximum and Minimum DC Input and Output Levels

Applicable to Commercial and Industrial Conditions was updated.

2-165

Table 2-79 • Summary of I/O Timing Characteristics – Software Default Settings

was updated.

2-134

Table 2-93 • I/O Output Buffer Maximum Resistances 1 was updated. 2-171

The "BLVDS/M-LVDS" section is new. BLVDS and M-LVDS are two new I/O

standards included in the datasheet.

2-211

The "CoreMP7 and Cortex-M1 Software Tools" section is new. 2-257

Table 2-83 • Summary of Maximum and Minimum DC Input and Output Levels

Applicable to Commercial and Industrial Conditions was updated.

2-165

Table 2-79 • Summary of I/O Timing Characteristics – Software Default Settings

was updated.

2-134

Table 2-93 • I/O Output Buffer Maximum Resistances 1 was updated. 2-171

The "BLVDS/M-LVDS" section is new. BLVDS and M-LVDS are two new I/O

standards included in the datasheet.

2-211

The "108-Pin QFN" table for the AFS090 device is new. 3-2

The "180-Pin QFN" table for the AFS090 device is new. 3-4

The "208-Pin PQFP" table for the AFS090 device is new. 3-8

The "256-Pin FBGA" table for the AFS090 device is new. 3-12

The "256-Pin FBGA" table for the AFS250 device is new. 3-12

Revision Changes Table

Fusion Family of Mixed Signal FPGAs

Revision 8 5-18

Datasheet Categories