2N4923 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

   

 

. . . designed for driver circuits, switching, and amplifier applications. These

high–performance plastic devices feature:

•Low Saturation Voltage — VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp

•Excellent Power Dissipation Due to Thermopad Construction —

PD = 30 W @ TC = 25

•Excellent Safe Operating Area

•Gain Specified to IC = 1.0 Amp

•Complement to PNP 2N4918, 2N4919, 2N4920

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎ

2N4921

ÎÎÎ

2N4922

ÎÎÎÎ

2N4923

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous (1)

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

1.0

3.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

1.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

0.24

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Operating & Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS (2)

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

θJC

ÎÎÎÎÎÎ

4.16

ÎÎÎ

C/W

(1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements.

The 3.0 Amp maximum value is based upon actual current handling capability of the

device (see Figures 5 and 6)

(2) Recommend use of thermal compound for lowest thermal resistance.

*Indicates JEDEC Registered Data.

025 50 75 100 125 150

Figure 1. Power Derating

TC, CASE TEMPERATURE (

PD, POWER DISSIPATION (WATTS)

Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by 2N4921/D

 Motorola, Inc. 1995







*Motorola Preferred Device

1 AMPERE

GENERAL–PURPOSE

POWER TRANSISTORS

40–80 VOLTS

30 WATTS



CASE 77–08

TO–225AA TYPE

REV 7

  

2Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 0.1 Adc, IB = 0) 2N4921

2N4922

2N4923

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 20 Vdc, IB = 0) 2N4921

(VCE = 30 Vdc, IB = 0) 2N4922

(VCE = 40 Vdc, IB = 0) 2N4923

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

0.5

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCEO, VEB(off) = 1.5 Vdc)

(VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 125

ÎÎÎÎ

ICEX

ÎÎÎÎ

—

ÎÎÎÎ

0.1

0.5

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = Rated VCB, IE = 0)

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

0.1

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VEB = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (1)

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

—

150

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (1)

(IC = 1.0 Adc, IB = 0.1 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

0.6

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage (1)

(IC = 1.0 Adc, IB = 0.1 Adc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

1.3

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage (1)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

1.3

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SMALL–SIGNAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)

ÎÎÎÎ

3.0

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz)

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

100

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

—

ÎÎÎ

—

(1) Pulse Test: PW ≈ 300 µs, Duty Cycle ≈ 2.0%.

*Indicates JEDEC Registered Data.

Figure 2. Switching Time Equivalent Circuit

5.0

Figure 3. Turn–On Time

IC, COLLECTOR CURRENT (mA)

VCC = 30 V

IC/IB = 20

t, TIME ( s)

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.05 20 30 50 70 100 200 700 1000

VCC

SCOPE

Cjd << Ceb

–4.0 V

≤

15 ns

100 < t2

≤

500

≤

15 ns

DUTY CYCLE

≈

2.0%

Vin

0.07

3.0 IC/IB = 10, UNLESS NOTED

VCC = 30 V

VCC = 60 V

VBE(off) = 2.0 V

VCC = 30 V

VBE(off) = 0

300 500

VBE(off)

APPROX 9.0 V

TURN–ON PULSE

Vin

APPROX

+11 V

Vin

TURN–OFF PULSE

APPROX

+11 V

RB and RC varied to

obtain desired

current levels

TJ = 25

TJ = 150

VCC = 60 V

  

Motorola Bipolar Power Transistor Device Data

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.03

r(t), TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000500

JC(t) = r(t)

JC = 4.16

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk)

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.01

0.1

SINGLE PULSE

1.0

Figure 5. Active–Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0

2.0

1.0

0.5

0.1 2.0 3.0 5.0 10 20 30 50 10070

0.2

IC, COLLECTOR CURRENT (AMP)

TJ = 150

C dc

5.0 ms

7.0

PULSE CURVES APPLY BELOW

RATED VCEO

SECOND BREAKDOWN

LIMITED

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25

7.0

3.0

0.7

0.3

1.0 ms 100

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE opera-

tion i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150

C; TC

is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

150

C. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

s, STORAGE TIME ( s)

′

5.0

Figure 6. Storage Time

IC, COLLECTOR CURRENT (mA)

2.0

1.0

0.5

0.3

0.2

0.1

0.05 20 30 50 70 500 700 1000

0.07

100

3.0

0.7

200 300

TJ = 25

TJ = 150

IC/IB = 10 IC/IB = 20

5.0

Figure 7. Fall Time

IC, COLLECTOR CURRENT (mA)

2.0

1.0

0.5

0.3

0.2

0.1

0.05 20 30 50 70 500 700 1000

0.07

100

3.0

0.7

200 300

TJ = 25

TJ = 150

IC/IB = 20

IC/IB = 10

IC/IB = 20

f, FALL TIME ( s)

IB1 = IB2

′

= ts – 1/8 tfVCC = 30 V

IB1 = IB2

  

4Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOL

TS)

RBE, EXTERNAL BASE–EMITTER RESISTANCE (OHMS)

1000

2.0

Figure 8. Current Gain

IC, COLLECTOR CURRENT (mA)

10 3.0 5.0 10 20 30 200 300 500 2000

500

200

100

Figure 9. Collector Saturation Region

1.0

0.2 IB, BASE CURRENT (mA)

00.3 0.5 1.0 2.0 5.0 10 20 50 200

0.8

0.6

0.4

0.2

IC = 0.1 A

TJ = 25

0.25 A 0.5 A 1.0 A

700

300

hFE, DC CURRENT GAIN

TJ = 150

–55

VCE = 1.0 V

50 100 1000 3.0 30 100

108

Figure 10. Effects of Base–Emitter Resistance

TJ, JUNCTION TEMPERATURE (

30 60 90 120 150

107

105

104

103

VCE = 30 VIC = 10 x ICES

IC = 2 x ICES

≈

ICES

ICES VALUES

OBTAINED FROM

FIGURE 12

106

1.5

2.0

IC, COLLECTOR CURRENT (mA)

5.0 10 20 30 50 100 200 300 2000

1.2

0.9

0.6

0.3

TJ = 25

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VOLTAGE (VOLTS)

Figure 11. “On” Voltage

3.0 500 1000

VBE @ VCE = 2.0 V

104

–0.2

Figure 12. Collector Cut–Off Region

VBE, BASE–EMITTER VOLTAGE (VOLTS)

103

102

10–1

, COLLECTOR CURRENT ( A)

–0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5

VCE = 30 V

TJ = 150

100

REVERSE FORWARD

IC = ICES

+2.5

2.0

Figure 13. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

3.0 5.0 10 20 30 50 100 200 2000

–55

C to +100

TEMPERATURE COEFFICIENTS (mV/ C)

+2.0

+1.5

+0.5

–0.5

–1.0

–1.5

–2.0

–2.5

VB FOR VBE

TJ = 100

C to 150

*APPLIES FOR IC/IB

≤

hFE @ VCE

1.0 V

+1.0

300 500 1000

101

100

10–2

VC FOR VCE(sat)

  

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 77–08

TO–225AA TYPE

ISSUE V

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

–B–

–A– M

1 32

2 PL

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.055 1.15 1.39

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 ––– 1.02 –––

_ _

  

6Motorola Bipolar Power Transistor Device Data

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2N4921/D

*2N4921/D*

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