© 2002 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 1 mA 1000 V
VGH(th) VDS = VGS, ID = 8 mA 3.0 5.5 V
IGSS VGS = ±20 VDC, VDS = 0 ±200 nA
IDSS VDS = VDSS TJ = 25°C 100 µA
VGS = 0 V TJ = 125°C3mA
RDS(on) VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 0.39 Ω
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ1000 V
VGS Continuous ±20 V
VGSM Transient ±30V
ID25 TC= 25°C24A
IDM TC= 25°C, pulse width limited by TJM 96 A
IAR TC= 25°C24A
EAR TC= 25°C60mJ
EAS TC= 25°C3.0J
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns
TJ≤ 150°C, RG = 2 Ω
PDTC= 25°C 600 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TJ1.6 mm (0.63 in) from case for 10 s - °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL ≤ 1 mA t = 1 s 3000 V~
MdMounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.5/13 Nm/lb.in.
Weight 30g
98875 (1/02)
D
S
G
S
S
G
S
D
miniBLOC, SOT-227 B
E153432
G = Gate D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
IXFN 24N100F VDSS = 1000 V
ID25 = 24 A
RDS(on) = 0.39 ΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 250 ns
HiPerRFTM
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
Features
lRF capable MOSFETs
lDouble metal process for low gate
resistance
lUnclamped Inductive Switching (UIS)
rated
lLow package inductance
- easy to drive and to protect
lFast intrinsic rectifier
Applications
lDC-DC converters
lSwitched-mode and resonant-mode
power supplies, >500kHz switching
lDC choppers
lPulse generation
lLaser drivers
Advantages
lEasy to mount
lSpace savings
lHigh power density
Advance Technical Information
IXFN 24N100F
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; I D = 0.5 • ID25, pulse test 16 24 S
Ciss 6600 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 760 pF
Crss 230 pF
td(on) 22 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 18 ns
td(off) RG = 1 Ω (External), 52 ns
tf11 ns
Qg(on) 195 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 40 nC
Qgd 100 nC
RthJC 0.21 K/W
RthCK 0.05 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 24 A
ISM Repetitive; 96 A
pulse width limited by TJM
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = IS, -di/dt = 100 A/µs, VR = 100 V 250 ns
QRM 1.4 µC
IRM 10 A
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
