BPW16N
www.vishay.com Vishay Semiconductors
Rev. 1.8, 24-Aug-11 1Document Number: 81515
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon NPN Phototransistor
DESCRIPTION
BPW16N is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-¾ plastic package with flat window. It
is sensitive to visible and near infrared radiation. On PCB
this package size enables assembly of arrays with 2.54 mm
pitch.
FEATURES
• Package type: leaded
• Package form: T-¾
• Dimensions (in mm): Ø 1.8
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 40°
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Detector in electronic control and drive circuits
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8638
PRODUCT SUMMARY
COMPONENT Ica (mA) ϕ (deg) λ0.1 (nm)
BPW16N 0.14 ± 40 450 to 1040
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPW16N Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Collector emitter voltage VCEO 32 V
Emitter collector voltage VECO 5V
Collector current IC50 mA
Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA
Power dissipation Tamb ≤ 55 °C PV100 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t ≤ 3 s Tsd 260 °C
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm2 RthJA 450 K/W
BPW16N
www.vishay.com Vishay Semiconductors
Rev. 1.8, 24-Aug-11 2Document Number: 81515
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Collector Dark Current vs. Ambient Temperature Fig. 2 - Relative Collector Current vs. Ambient Temperature
020406080
0
25
50
75
100
125
PV - Power Dissipation (mW)
Tamb - Ambient Temperature (°C)
100
94 8308
RthJA = 450 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter breakdown voltage IC = 1 mA V(BR)CEO 32 V
Collector emitter dark current VCE = 20 V, E = 0 ICEO 1200nA
Collector emitter capacitance VCE = 5 V, f = 1 MHz, E = 0 CCEO 8pF
Collector light current Ee = 1 mW/cm2, λ = 950 nm,
VCE = 5 V Ica 0.07 0.14 mA
Angle of half sensitivity ϕ± 40 deg
Wavelength of peak sensitivity λp825 nm
Range of spectral bandwidth λ0.1 450 to 1040 nm
Collector emitter saturation voltage Ee = 1 mW/cm2, λ = 950 nm,
IC = 0.01 mA VCEsat 0.3 V
Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ωton 4.8 μs
Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ωtoff 5.0 μs
Cut-off frequency VS = 5 V, IC = 5 mA, RL = 100 Ωfc120 kHz
94 8235
20
I
CEO
- Collector Dark Current (nA)
100
40 60 80
T
amb
- Ambient Temperature (°C)
10
0
10
1
10
2
10
3
10
4
V
CE
= 20 V
0
0.6
0.8
1.0
1.2
1.4
2.0
20 40 60 80 100
1.6
1.8
λ
94 8239
T
amb
- Ambient Temperature (°C)
I
ca rel
- Relative Collector Current
V
CE
= 5 V
E
e
= 1 mW/cm2
= 950 nm
BPW16N
www.vishay.com Vishay Semiconductors
Rev. 1.8, 24-Aug-11 3Document Number: 81515
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Collector Light Current vs. Irradiance
Fig. 4 - Collector Light Current vs. Collector Emitter Voltage
Fig. 5 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 6 - Turn-on/Turn-off Time vs. Collector Current
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement
0.01 0.1 1
0.001
0.01
0.1
1
I - Collector Light Current (mA)
ca
Ee- Irradiance (mW/cm2)
10
94 8236
VCE =5V
λ= 950 nm
0.1 1 10
0.01
0.1
1
I - Collector Light Current (mA)
ca
V
CE
- Collector Emitter Voltage (V)
100
94 8237
E
e
=1 mW/cm
2
λ= 950 nm
0.5 mW/cm
2
0.2 mW/cm
2
0.1 1 10
0
4
8
12
16
20
C
CEO
- Collector Emitter Capacitance (pF)
V
CE
- Collector Emitter Voltage (V)
100
94 8240
f = 1 MHz
04812
0
2
4
6
8
12
t/t -Turn on / Turn off Time (µs)
off
IC- Collector Current (mA)
16
94 8238
10
on
VCE =5V
RL= 100 Ω
λ= 950 nm
toff
ton
400 600 1000
0
0.2
0.4
0.6
0.8
1.0
S(λ) - Relative Spectral Sensitivity
rel
-Wavelength (nm)
94 8241
800
λ
0.4 0.2 0
94 8312
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
S
rel
- Relative Radiant Sensitivity
ϕ - Angular Displacement
BPW16N
www.vishay.com Vishay Semiconductors
Rev. 1.8, 24-Aug-11 4Document Number: 81515
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
technical drawings
according to DIN
specifications
6.544-5047.01-4
Issue: 2; 19.12.00
EC
Area not plane
Chip position
2.4 ± 0.15
3.3 ± 0.15
R 1.65
Ø 1.8 ± 0.1
0.4 + 0.15
(1.3)
1.5 ± 0.25
0.8 ± 0.1
2.2 ± 0.3
2.7 ± 0.3
29.1 ± 0.5
0.5 + 0.2
- 0.1
2.54 nom.
96 12188
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 02-Oct-12 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
