SS Ni (lh fut | Ni tumult Point Contact Mixer and Detector Diodes 3 Description This series of point contact mixer and detector diodes features good mechanical reliability, low noise figure and is designed for use in stripline, waveguide and coaxial mixers, detectors and power monitors. This series of diodes is offered in axial lead, ceramic or coaxial packages. Features @ PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES M@ COAXIAL POINT CONTACT MIXER DIODES M@ AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES M@ AXIAL LEAD GLASS PACKAGED POINT CONTACT DETECTOR. DIODES Applications These diodes are designed for mixer, detector and power monitors where good burnout and noise figure are major design criteria. M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 (617) 272-3000 * TWX 710-332-6789 TELEX 94-9464 7-3Point Contact Mixer and Detector Diodes Packaged Cartridge Point Contact Mixer Diodes Description Features These packaged cartridge point contact mixer diodes @ LOW NOISE feature low noise figure performance. Diodes in this series are available from S-band through X-band. JAN rated devices are also available. This special series of lm GOOD BURNOUT RESISTANCE TO hermetically sealed point contact diodes has been carefully SHORT NANOSECOND PULSES engineered for single or balanced mixer applications. (i.e., TR TUBE LEAKAGE) These diodes are useful for waveguide mixers from S-band @ SCREENABLE TO MILITARY through X-band, such as in marine radars, where good SPECIFICATIONS burnout resistance is required. Specifications @ Ta = 25C MIL-STD-195008 Test Maximum? Zip Range* Maximum Detail Frequency Noise Figure (Ohms) SWR Specification Mode! Number'2 | Case Style (GHz) (dB) Min./Max. (Ratio) Number 1N416G 3 3 5.5 350-450 1.3 JAN1IN21WG 3 3 5.5 350-450 1.3 321 1N416F 3 3 6.0 350-450 1.3 1IN416E 3 3 7.0 350-450 1.3 JAN1N21WE 3 3 7.0 350-450 1.3 232A JAN1N3655A 3 3 7.0 350-450 1.3 334 1N416D 3 3 7.5 325-475 1.5 IN21G 7-1 3 5.5 350-450 1.3 IN21F 7-1 3 6.0 350-450 1.3 IN21E 7-1 3 7.0 350-450 1.3 1N21D 7-1 3 7.5 325-475 1.5 1N415H 3 9 6.0 335-465 1.3 JANIN23WG 3 9 6.5 335-465 1.3 322A 1N415G 3 9 6.5 335-465 1.3 1N415F 3 9 7.0 335-465 1.3 JANI N23WE 3 9 7.5 335-465 1.3 322A 1N415E 3 9 7.5 335-465 1.3 1N415D 3 9 8.2 325-475 1.3 1N415C 3 9 9.5 325-475 1.5 1N3745 3 9 9.5 325-475 1.5 1N23H 7-1 9 6.0 335-465 1.3 1N23G 7-1 9 6.5 335-465 1.3 1N23F 7-1 9 7.0 335-465 1.3 1N23E 7-1 9 7.5 335-465 1.3 1N23D 7-1 9 8.2 325-475 1.3 1N23C 7-1 9 9.5 325-475 1.5 NOTES: 1. The 1N21D through G, and 1N23C through H series diodes are housed in 3. Noise Figure Test Conditions: the fixed base package, case style 7-1. All other diodes in this series are IRECT = 1.0mA housed in case style 3. Case style 3 has a removable-reversible base IF = 30 MHz adapter. NFif = 1.5 dB minimum 2. All diodes in this series are available as matched pairs for balanced mixer RL = 22 ohms circuits. There are two types of matched pairs: 4. IF impedance is measured by modulating the specified test frequency with To order two match pairs with the same polarity, forward pairs add the a 1000 Hz signal, R, = 22 ohms, at an incident power level of 1.0 mW. suffix M to the part number, i.e., IN23EM 5. SWR is tested at a peak power of 1.0 mW, Ry = 22 ohms. To order two match diodes with opposite polarity, reverse pairs add the 6. These diodes are available as JAN MIL qualified types. suffix MR to the part number, i.e., IN23MR. The matching criteria is: AL, = 0.3 dB maximum AZif = 25 ohms maximum M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 (617) 272-3000 * TWX 710-332-6789 TELEX 94-9464 7-4Point Contact Mixer and Detector Diodes Coaxial Point Contact Mixer Diodes Description This series of coaxial silicon point contact mixer diodes is especially designed for low noise figure performance. Two case styles are offered: case style 11 for X-, Ku- and K- band and case style 10 for Ka-band. These diodes are used as waveguide mixers in X- through Ka-band. Specifications @ Tg = 25C Features @ WIDER BANDWIDTH THAN CARTRIDGE DIODES IN X BAND MIL-STD-19500 Test Maximum? Zip Range* Maximum Detail Frequency Noise Figure (Ohms) SWR Specification Model Number? | Case Style (GHz) (dB) Min./Max. (Ratio) Number MA492F 11 9 7.0 250-450 1.3 MA492E 11 9 7.5 250-450 1.3 MA492D 11 9 8.5 250-450 1.7 MA492C 11 9 9.5 250-450 1.7 MA490G 14 16 7.0 400-565 1.5 1N78G 14 16 7.0 400-565 1.5 JAN1N78F 11 16 7.5 400-565 1.5 130C 1N78F 11 16 7.5 400-565 1.5 MA490F 11 16 7.5 400-565 1.5 MA490E 11 16 8.0 400-565 1.5 1N78E 11 16 8.0 400-565 1.5 1iN78D 11 16 8.5 400-565 1.5 MA490D 11 16 8.5 400-565 1.5 1N78C 11 16 9.5 400-565 1.5 MA4390C 11 16 9.5 400-565 1.5 JAN1N78G 11 16 9.5 400-565 1.5 130B MA490B 11 16 10.0 365-565 1.6 1N78B 11 16 10.0 365-565 1.6 1N26C 11 24 9.5 400-600 1.6 1N493C 11 24 9.5 400-600 1.5 JAN1N26B 11 24 11.0 400-600 1.5 128A 1N26B 14 24 11.0 400-600 1.5 1N53D(5) 10 35 9.0 400-800 1.6 MA494C 10 35 9.0 400-800 1.6 1N53C 10 35 9.0 400-800 1.6 MA494D 10 35 9.0 400-800 1.6 MA494B 10 35 10.0 400-800 1.6 JAN1N53B 10 35 10.0 400-800 1.6 186B 1N53B 10 35 10.0 400-800 1.6 MA494A 10 35 11.0 400-800 1.6 1N53A 10 35 11.0 400-800 1.6 MA494 10 35 13.0 400-800 1.6 1N53 10 35 13.0 400-800 1.6 NOTES: 1. These diodes are available in two polarities. One is a forward diode with a center conductor in the anode. To order a forward diode, specify the mode! number only, i.e. 1N78D. The other available polarity is a reverse diode. To order a reverse diode, add the suffix "'R to the basic model number, i.e., 1N78DR. 2. These diodes can be supplied in matched pairs for balanced mixer circuits. There are two types of pairs: (a} Two matched forward" polarity diodes. To order a forward pair add the suffix M to the basic model number, i.e., 1N78DM. (b) Two matched, 1 forward and 1 reversed diodes. To order, a reverse pair add the suffix MR to the basic model number, i.e., 1N78DMR. The matching criteria for all pairs is: AL, = 0.3 dBM maximum AZje =~ 25 ohms maximum 3. The noise figure of these diodes are all measured in a fixed tuned JAN specified test holder at the following frequencies: F = 9.375 GHz F = 16.00 GHz F = 23.98 GHz F = 36.80 GHz Local oscillator power = 1.0 mW IF = 30 MHz Ry, = 100 ohms NFip = 1.5 dB maximum 4. Ie impedance is measured by modulating the specified test frequency with a 1000 Hz signal. l_ impedance and SWR are tested at an incident power level of 1.0 mW, Ry = 100 ohms. 5. The 1N53D (MA494D) is rated for an operating temperature of 150C vs. 70C for other types. 6. These diodes are JAN MIL qualified types. M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 (617) 272-3000 * TWX 710-332-6789 TELEX 94-9464 7-57-6 Point Contact Mixer and Detector Diodes Axial Lead Glass Packaged Point Mixer Diodes Description Features This series of glass axial lead point contact mixer diodes B@ HIGH SENSITIVITY features low capacitance, good mechanical reliability, low noise figure and is designed for use in stripline, microstrip @ UNIFORM AND REPEATABLE RE and coaxial mixers from 500 MHz and 12.4 GHz. Each device in this series is housed in an axial lead glass CHARACTERISTICS package, case style 4. m@ BROADBAND These diodes are designed for usage where bandwidth, good burnout and noise figure are major design criteria. @ HIGH BURNOUT RESISTANCE Specifications @T, = 25C 2Z)F? Nominal? Test Maximum? Range Conversion Frequency Noise Figure (Ohms) Logs, Le Model Number! Case Style (GHz) (dB) Min./Max. (dB) 1N831C 4 3 6.0 350-450 4.0 1N831B 4 3 6.5 350-550 4.5 1IN831A 4 3 7.0 350-550 5.0 1N831 4 3 8.3 350-450 5.5 1N832C 4 9 6.5 335-465 4.5 1N832B 4 9 7.0 335-465 5.0 1N832A 4 9 7.5 335-465 6.0 1N832 4 9 9.5 325-475 7.0 NOTES: 1. All diode models are available as matched pairs. To order, add the suffix M to the model number. Matching criteria: AL, = 0.3 dB maximum AZip = 25 ohms maximum 2. The 1N831 series is tested at 3.06 GHz and LO power of 0.5 mW. The 1N832 series is tested at 9.375 GHz and LO power of 1.0 mW. Both series of diodes are tested in a fixed, tuned JAN holder with an appropriate fixed adapter. The other test conditions are: IF = 30 MHZ NFi = 1.5 dB minimum Ri = 100 ohms MAXIMUM RATINGS Operating Temperature -65C to + 150C Storage Temperature - 65C to + 150C incident CW RF Power 75 mW Incident Pulse RF Power 1W (3 ns pulse width, .001 duty cycle) M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 * (617) 272-3000 TWX 710-332-6789 * TELEX 94-9464Point Contact Mixer and Detector Diodes Axial Lead Glass Package Point Contact Detector Diodes Description Features This series of point contact detector diodes is offered in axial lead glass packages. These devices are useful as detectors and power monitors where bandwidth, high burnout resistance and sensitivity are the major design criteria. These diodes do not require DC bias to obtain the specified sensitivity. ZERO BIAS These diodes are intended for coaxial and stripline detectors from VHF through X-band, where operation without external bias is required. Specifications @ Ta = 25C M@ MODERATE VIDEO IMPEDANCE AT Video Resistance4 Test Frequency Minimum Tss?*4 Range Model Number' Case Style (GHz) (dBm) (kilohms) MA4123 4 3 45 5.0-25.0 MA41511 54 3 - 48 4.5-18.0 MA41512 54 3 -50 4.5-18.0 MA4123A 4 3 ~ 48 5.0-25.0 MA4123B 4 3 ~ 50 4.5-18.0 MA41510 54 3 ~ 45 4.5-18.0 1N833A 4 9 48 4.5-18.0 MA41515 54 9 ~ 50 4.5-18.0 MA41513 54 9 ~45 4.5-18.0 MA41514 54 9 ~ 48 4.5-18.0 1N833 4 9 -45 4.5-18.0 1N833B 4 9 -50 4.5-18.0 NOTES: 1. Matched pairs are available by adding the suffix M to the model number. The matching criteria is: Output voltage is matched at a deita input power of 0.5 dBm maximum. Video resistance is matched to a delta to a percentage maximum of the incident power level. The matching is done at - 30 dBm incident power. 2. Bandwidth of the video amplifier = 2 MHz; amplifier noise figure = 3.5 dB maximum with an input impedance of 10,000 ohms. Low frequency cut-off is approximately 10 kHz. 3. The test holders used to make the Tgg measurements are: Test holder JAN264 with adaptor for MA4123 through MA4123B Test holder JAN 1908 for MA41510 through MA41512 Test holder JAN 105 (modified) for 1N833B Test holder JAN JD 2078 for MA41513 through MA41515. 4. Tgg is tested with no external bias current. M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 (617) 272-3000 * TWX 710-332-6789 TELEX 94-9464Point Contact Mixer and Detector Diodes Case Styles 3 H-~ neue L RAD. a | | E ay M A D fh F ty ADAPTOR 4 ec BASE G .<B 4 < A> B DIA. [" DIA. TYP. c3 SS Le | 7-1 K DIA. H DIA.4 } _ J DIA. L RAD. NN ww a? ; |x mi A c G * pia <B DIA M/A-COM SEMICONDUCTOR PRODUCTS OPERATION * Burlington, MA 01803 (617) 272-3000 * TWX 710-332-6789 TELEX 94-9464 7-8 INCHES MILLIMETERS DIM. MIN. | MAX. MIN. | MAX. A 0.800 0.840 20,32 | 21,34 B 0.292 0.296 7,42 7,52 C 0.246 0.250 6,25 6,35 D 0.753 0.783 19.13 19,89 E 0.180 0.190 4,57 4,83 F 0.193 0.199 4,90 5,05 G 0.047 0.057 1,19 1,45 H 0.220 0.240 5,64 6,10 J 0.195 0.215 4,95 5,46 K 0.092 0.094 2,34 2,39 L 0.030 0.046 0,76 1,17 M 0.020 0.030 0,51 0,76 Adaptor base optional. Cp = 0.12 pF Typical Lg = 0.50 nH Typical 0.230 0.085 1.000 0.018 Cp = 0.15 pF Typical Ls = 2.50 nH Typical INCHES MILLIMETERS DIM. MIN, MAX. MIN. | __MAX. A 0.800 | 0.840 20,32 | 21,34 B 0.290 | 0.296 7,37 7,52 C 0.246 | 0.250 6,25 6,35 D 0.753. | 0.783 19,13 | _19,89 E 0.180 | 0.190 4,57 4,83 F 0.193 | 0.199 4,90 5,05 G 0.047 | 0.057 1,19 1,45 H 0.222 | 0.240 5,64 6,10 J 0.195 | 0.215 4,95 5,46 K 0.092 | 0.094 2,34 2,39 L 0.030. | 0.046 0,76 1,17 M 0.020 | 0.030 0,51 0,76 N | _0.030 _ 0,76 Cp = 0.12 pF Typical Lg = 0.50 nH TypicalPoint Contact Mixer and Detector Diodes Case Styles (Contd) 10 le A >| INCHES MILLIMETERS DIM. MIN. | MAX. MIN. | MAX. c A 0.545 0.555 13,84 14,10 B 0.158 0.162 4,01 411 C 0.099 2,51 D 0.010 0.018 0,25 0,46 E 0.019 0.021 0,48 0,53 F 42 48 42 48 D 11 INCHES MILLIMETERS DIM. MIN. | MAX. MIN. | MAX. A 0.734 0.766 18,64 19,46 B 0.215 0.220 5,46 5,59 C 0.147 _ 3,73 _ EDA = BDIA. D 0.011 0.028 0,28 0,71 _ E 0.031 0.033 0,79 0,84 F 42 48 42 48 im D _ 54 B DIA. INCHES MILLIMETERS | DIM. MIN. [| MAX. MIN. | MAX. _ | A 0.145 0.165 3,68 4,19 Cf w/a B 0.068 0.075 1,72 1,91 a, - C 0.014 0.016 0,35 0,41 | CDIA D 1.000 1.500 25,40 38,10 a D =p \ > TYP. Cp = 0.05 pF Typical lg = 1.00 nH Typicai Ordering Information Orders for products from M/A-COM Semiconductor Products Operation should be placed with our local sales office. Should there be a need for factory sales or applications engineering assistance, contact M/A-COM directly. M/A-COM SEMICONDUCTOR PRODUCTS OPERATION * Burlington, MA 01803 (617) 272-3000 TWX 710-332-6789 TELEX 94-9464 7-9