DS11107 Rev. H-2 1 of 2 BC817-16/-25/-40
BC817-16 / -25 / -40
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
Maximum Ratings @25°C unless otherwise specified
Notes: 1. Device mounted on Ceramic Substrate 0.7mm; 2.5cm2area.
Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5.0 V
Collector Current IC800 mA
Peak Collector Current ICM 1000 mA
Peak Emitter Current IEM 1000 mA
Power Dissipation at TSB = 50°C (Note 1) Pd310 mW
Operating and Storage Temperature Range Tj,T
STG -65 to +150 °C
·
310 mW Power Dissipation
·
Ideally Suited for Automatic Insertion
·
Epitaxial Planar Die Construction
·
For Switching, AF Driver and Amplifier
Applications
·
Complementary PNP Types Available (BC807)
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Case: SOT-23, Molded Plastic
·
Terminals: Solderable per MIL-STD-202,
Method 208
·
Pin Connections: See Diagram
·
Marking: BC817-16 6A, K6A
BC817-25 6B, K6B
BC817-40 6C, K6C
·
Aprox. Weight: 0.008 grams
·
Mounting Position: Any
Mechanical Data
Electrical Characteristics @25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
DC Current Gain Current Gain Group -16
-25
-40
Current Gain Group -16
-25
-40
hFE
100
160
250
60
100
170
250
400
600
—
—
—
—
VCE = 1.0V, IC= 100mA
VCE = 1.0V, IC= 300mA
Thermal Resistance, Junction to Substrate Backside R
q
SB — 320 K/W Note 1
Thermal Resistance, Junction to Ambient Air R
q
JA — 400 K/W Note 1
Collector-Emitter Saturation Voltage VCE(SAT) — 0.7 V IC= 500mA, IB= 50mA
Base-Emitter Voltage VBE — 1.2 V VCE = 1.0V, IC= 300mA
Collector-Emitter Cutoff Current ICES —100
5.0 nA
µA VCE = 45V
VCE = 25V, Tj= 150°C
Emitter-Base Cutoff Current IEBO — 100 nA VEB = 4.0V
Gain Bandwidth Product fT100 — MHz VCE = 5.0V, IC= 10mA,
f = 50MHz
Collector-Base Capacitance CCBO —12pF
VCB = 10V, f = 1.0MHz
SOT-23
Dim Min Max
A0.37 0.51
B1.19 1.40
C2.10 2.50
D0.89 1.05
E0.45 0.61
G1.78 2.05
H2.65 3.05
J0.013 0.15
K0.89 1.10
L0.45 0.61
M0.076 0.178
All Dimensions in mm
DS11107 Rev. H-2 2 of 2 BC817-16/-25/-40
