Small-Outline SMD Reliability Report Page 1 Table of Contents Section I. II. III. IV. V. VI. VII. VIII. IX. X. Page Executive Summary Introduction Procedure Reliability Tests - Table I Electrical Tests - Table II Test Purposes & Common Failure Mechanisms Reliability Data Failure Rate Estimate Variable Data HTRB HTGB THB TC SMT Package Qualification Data 2 3-6 7-8 9 10-15 16-19 20-29 30-32 33-36 37-39 40-42 43-45 46-55 INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 2 Executive Summary This report summarizes the qualification data on International Rectifier's generation-V HEXFET and FETKY devices in small-outline surface mount SO-8, Micro8, Micro6, and Micro3 packages. The die, packaging materials and assembly processes meet the reliability requirements established by the Project Team at International Rectifier for this product class. All tests are either performed or overseen by Reliability Engineering. The original data has been stored by Reliability and is available for review upon request. For further information or any questions regarding this report please contact: International Rectifier 233 Kansas Street El Segundo, CA 90245 Attn: Reliability Engineering Phone: (310) 322-3331 Fax: (310) 322-3332 INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 3 Micro8 The Micro8 is a commercial surface mount plastic package containing up to two die (2 HEXFET or 1 HEXFET + 1 Schottky) per package. Typically Micro8 packages are used in ultra low on-resistance, space limited applications where multiple devices are required; such as cellular phones, disk drives, laptop computers and other portable electronics. Based on the test results of the eight devices indicated below and other devices in the same silicon family, Micro8 devices are considered qualified. Devices tested: IRF7504, VDSS(max) = - 20 V, IRF7603, VDSS(max) = 30 V, IRF7606, VDSS(max) = - 30 V, IRF7521D1, VDSS(max) = 20 V, IRF7604, VDSS(max) = - 20 V IRF7506, VDSS(max) = - 30 V IRF7601, VDSS(max) = 20 V IRF7523D1, VDSS(max) = 30 V Criteria: Technology: 3.3 V and 5 V Logic Level Gen-V HEXFETs Very Low Forward Drop Schottky Rectifier Polarity: N-Channel & P-Channel Die Size: 1) Less than or equal to 70 x 85 x 10 mils for HEXFET 2) 36 x 36 x 10 mils for Schottky Voltage: Less than or equal to 30 volts Top Metalization: Al Back Metalization: Cr/Ni-V/Ag Gate Material: Polysilicon Wafer Fab Location: Fab 2, HEXFET America, Temecula, CA Borgaro, Italy (IRCI) for Schottky Assembly: 1) Carsem - Ipoh, Malaysia 2) Hana - Thailand Leadframe: Ag spot plated Cu (Olin 194) Die Bond Material: Ag filled epoxy Die Bond Method: Automated die attach machine Wire: 1.3 mil dia. Au Wire Bonding Method: Thermosonic ball to die and stitch bond to lead frame Mold Compound: High Performance Biphenyl Epoxy Resin INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 4 SO-8 The SO-8 is a commercial surface mount plastic package containing up to two die (2 HEXFET or 1 HEXFET + 1 Schottky) per package. Typically SO-8 packages are used in low current, space limited applications where multiple devices are required; such as disk drives, laptop computers and other portable electronics. Based on the test results of the fourteen devices indicated below and other devices in the same silicon family, Advanced SO-8 devices are considered qualified. Devices tested: IRF7401, VDSS(max) = 20 V IRF7421D1, VDSS(max) = 30V IRF7404, VDSS(max) = - 20 V IRF7103, VDSS(max) = 55 V IRF7413, VDSS(max) = 30 V IRF7313, VDSS(max) = - 20V IRF7321D2, VDSS(max) = - 30 V IRF7403, VDSS(max) = 30 V IRF7422D2, VDSS(max) = - 20V IRF7416, VDSS(max) = - 30 V IRF7201, VDSS(max) = 30 V IRF7304, VDSS(max) = - 20V IRF7316, VDSS(max) = - 30 V IRF7389, VDSS(max) = 30 V Criteria: Technology: 3.3 V and 5 V Logic Level Gen-V HEXFETs Very Low Forward Drop Schottky Rectifier Polarity: N-Channel & P-Channel Die Size: Less than or equal to 102 x 157 x 10 mils for HEXFET D1 (36 x 36 and 43 x 43 mils) and D2 (60 x 60 and 66 x 66 mils) for Schottky Voltage: Less than or equal to 55 volts Top Metalization: Al Back Metalization: Cr/Ni-V/Ag Gate Material: Polysilicon Wafer Fab Location: Fab 2, HEXFET America, Temecula, CA for HEXFET 330 Kansas St., El Segundo, CA and Borgaro, Italy (IRCI) for Schottky Assembly: 1) Carsem - Ipoh, Malaysia 2) Amkor/Anam Pilipinas Leadframe: 1) Ag spot plated Cu (Olin 194) for Assembly 1 2) Cu (olin 194) for Assembly 2 Die Bond Material: Ag filled epoxy Die Bond Method: Automated die attach machine Wire: 2 mil dia. Au Wire Bonding Method: Thermosonic ball to die and stitch bond to lead frame Mold Compound: 1) High Performance Biphenyl Epoxy Resin for autoclavecapable performance 2) Novolac Epoxy for non-autoclave required application INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 5 INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 6 Micro6 The Micro6 is a commercial surface mount plastic package, typically can be used in ultra low on-resistance, space limited applications where multiple devices are required; such as cellular phones, disk drives, laptop computers and other portable electronics. Based on the test results of the four devices indicated below and other devices in the same silicon family, Micro6 devices are considered qualified. Devices tested: IRLMS1503, VDSS(max) = 30 V, IRLMS5703, VDSS(max) = - 30 V IRLMS1902, VDSS(max) = 20 V IRLMS6702, VDSS(max) = - 20 V Criteria: Technology: 3.3 V and 5 V Logic Level Gen-V HEXFETs Polarity: N-Channel & P-Channel Die Size: Less than or equal to 35 x 70 x 10 mils Voltage: Less than or equal to 30 volts Top Metalization: Al Back Metalization: Cr/Ni-V/Ag Gate Material: Polysilicon Wafer Fab Location: Fab 2, HEXFET America, Temecula, CA Assembly: Carsem - Ipoh, Malaysia Leadframe: Ag spot plated Cu (Olin 194) Die Bond Material: Ag filled epoxy Die Bond Method: Automated die attach machine Wire: 1.3 mil dia. Au Wire Bonding Method: Thermosonic ball to die and stitch bond to lead frame Mold Compound: Novolac Epoxy Resin INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 7 Micro3 The Micro3 is a commercial surface mount plastic package, typically can be used in ultra low on-resistance, space limited applications where multiple devices are required; such as cellular phones, disk drives, laptop computers and other portable electronics. Based on the test results of the device indicated below and other devices in the same silicon family, Micro3 devices are considered qualified. Devices tested: IRLML2402, VDSS(max) = 20 V IRLML5103, VDSS(max) = - 30 V IRLML6302, VDSS(max) = - 20 V IRLML2803, VDSS(max) = 30 V Criteria: Technology: 3.3 V and 5V Logic Level Gen-V HEXFETs Polarity: N-Channel & P-Channel Die Size: Less than or equal to 28 x 38 x 10 mils Voltage: Less than or equal to 30 volts Top Metalization: Al Back Metalization: Cr/Ni-V/Ag Gate Material: Polysilicon Wafer Fab Location: Fab 2, HEXFET America, Temecula, CA Assembly: Carsem - Ipoh, Malaysia Leadframe: Alloy 42 Die Bond Material: Au Eutectic Die Bond Method: Automated die attach machine Wire: 1.0 mil dia. Au Wire Bonding Method: Thermosonic ball to die and stitch bond to lead frame Mold Compound: High Performance Biphenyl Epoxy Resin INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 8 Surface Mount Technology Qualification Procedure The SMT board acts not only as a test vehicle for the surface mount devices, but simulates the thermo-mechanical stresses and flux exposure devices are subjected to during surface mounting procedures. Electrical measurements are taken on devices which are then attached to the SMT board, via furnace reflow. After the furnace reflow process the cards are ultrasonically cleaned using Photoresist Stripper (ACT-I) to remove the residual flux. Electrical parameters are re-measured and any rejects are analyzed to determine the failure mode. The devices are split into groups by stress type and left on the test board throughout the remaining tests. The device to board attach method and materials are: Board Material: Fiberglass with 1 oz Cu, Plating - 50 m Au over 200 m Ni Solder: 63 Sn/37 Pb Flux: RMA Furnace Temperature: 240 C peak Furnace Duration: Eight minutes Cleaning: Photoresist Stripper ACT-I The devices are initially measured (see Table II) then subjected to the reliability tests (see Table I) DC electrical parameters are taken at initial, interim and final readpoints. The electrical parameters taken are: BVDSS, IDSS, IGSS, VGS(th), and RDS(ON) INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 9 Surface Mount Technology Package Qualification Procedure Additional to the standard qualification procedure, SMT devices also undergo a package qualification process. The package qualification testing consists of a moisture resistance test (500 hours 85 C/85% RH test or 96 hours autoclave testing), Temperature Cycling test, C-Mode Scanning Acoustic Microscope (C-SAM) analysis, and Micro Cracks Inspection through Optical Microscope and Cross Sectioning Technique. Devices were subjected to a preconditioning sequence prior to the package qualification testing. The preconditioning sequence: Temperature Cycling - 55 C to + 150 C 5 cycles + Unbiased 168 hours 85 C / 85% RH + Lonco 3355-11 Fluxing + 5 seconds 260 C Solder Dipping or SMT Board Mounting (IR Reflow @ 240 C Peak) + Kester 450 Fluxing + 5 seconds 260 C Solder Dipping or SMT Board Mounting (IR Reflow @ 240 C Peak) + SMT Board Mounting IR @ 240 C Peak + Temperature Cycling - 55 C to + 150 C 100 cycles INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 10 Reliability Tests Table I High Temp Reverse Bias - HTRB Conditions: VDSS = 100% rated BVDSS, TJ = Max rating Duration and interim test points: 48, 330, 660 & 1000 hours Test Window: Within 24 hours Sensitive Parameters: BVDSS, IDSS, VGS(th) & RDS(ON) High Temp Gate Bias - HTGB Conditions: VGSS = 80% Rated Max VGSS, TJ = Max rating Duration and interim test points: 24, 168, 330, 500 & 1000 hours Test Window: Within 24 hours Sensitive Parameters: IGSS & VGS(th) Temp Humidity Bias - THB Conditions: VDSS = 100% rated BVDSS, TA = 85 C, RH = 85% Duration and interim test points: 48, 330, 660 & 1000 hours Test Window: Between 2 and 8 hours Sensitive Parameters: IGSS & IDSS Temperature Cycling - TC Conditions: Tmax = + 150 C, Tmin = - 55 C Duration and interim test points: 50, 330, 660 & 1000 cycles Sensitive Parameters: RDS (ON) & IDSS Visual: No evidence of mechanical damage Autoclave - PC Conditions: TA = + 121 C, P = 2 ATM, 14.7 PSIG Duration and interim test points: 96 hrs Test Window: Between 24 and 48 hours Sensitive Parameters: RDS (ON), IGSS & IDSS The devices were initially measured then submitted to the testing outlined above. At the above outlined intervals the devices were removed from testing for electrical measurements. The devices were then put back on testing for the duration of the specified time. All the pre and post electrical data for those tests listed in the table IIIA is stored and available upon request. Examples of variable data can be found in the back of this report. INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 11 Initial and Interim Electrical Specifications Table II-A part type IRF7401 (SO-8) Symbol Definition Applied Conditions IGSS IGSS IDSS BVDSS Gate to Source Forward Leakage Current Gate to Source Reverse Leakage Current Drain to Source Leakage Current Drain to Source Breakdown Voltage VGS = 8 V VGS = -8 V VDS = 16 V, VGS= 0 V ID = 250 A, VGS = 0 V VGS(th) RDS(ON)1 RDS(ON)2 Gate to Source Threshold Voltage Drain to Source On Resistance Drain to Source On Resistance VGS = VDS, ID =250 A VGS = 4.5 V, ID = 4.1 A VGS = 2.7 V, ID = 3.5 A Limit 100 -100 1.0 20 0.7 min 22 30 Units nA nA A V V m m Table II-B part type IRF7403 (SO-8) Symbol Definition Applied Conditions IGSS IGSS IDSS BVDSS Gate to Source Forward Leakage Current Gate to Source Reverse Leakage Current Drain to Source Leakage Current Drain to Source Breakdown Voltage VGS = 20 V VGS = -20 V VDS = 24 V, VGS= 0 V ID = 250 A, VGS = 0 V VGS(th) RDS(ON)1 RDS(ON)2 Gate to Source Threshold Voltage Drain to Source On Resistance Drain to Source On Resistance VGS = VDS, ID =250 A VGS = 10 V, ID = 4.0 A VGS = 4.5 V, ID = 3.4 A Limit 100 -100 1.0 30 1.0 min 22 35 Units nA nA A V V m m Limit 100 -100 1.0 30 1.0 min 35 60 Units nA nA A V V m m Table II-C part type IRF7421D1 (SO-8) Symbol Definition Applied Conditions IGSS IGSS IDSS BVDSS Gate to Source Forward Leakage Current Gate to Source Reverse Leakage Current Drain to Source Leakage Current Drain to Source Breakdown Voltage VGS = 20 V VGS = -20 V VDS = 24 V, VGS= 0 V ID = 250 A, VGS = 0 V VGS(th) RDS(ON)1 RDS(ON)2 Gate to Source Threshold Voltage Drain to Source On Resistance Drain to Source On Resistance VGS = VDS, ID =250 A VGS = 10 V, ID = 4.1 A VGS = 4.5 V, ID = 2.1 A INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 12 Table II-D part type IRF7404 (SO-8) Symbol Definition Applied Conditions IGSS IGSS IDSS BVDSS Gate to Source Forward Leakage Current Gate to Source Reverse Leakage Current Drain to Source Leakage Current Drain to Source Breakdown Voltage VGS = -8 V VGS = 8 V VDS = -16 V, VGS= 0 V ID = -250 A, VGS = 0 V VGS(th) RDS(ON)1 RDS(ON)2 Gate to Source Threshold Voltage Drain to Source On Resistance Drain to Source On Resistance VGS = VDS, ID =-250 A VGS = -4.5V, ID = -3.2 A VGS = -2.7 V, ID =-2.7 A Limit -100 100 -1 -20 -0.7 min 40 60 Units nA nA A V V m m Limit -100 100 -1 -20 -0.7 min 90 140 Units nA nA A V V m m Table II-E part type IRF7422D2 (SO-8) Symbol Definition Applied Conditions IGSS IGSS IDSS BVDSS Gate to Source Forward Leakage Current Gate to Source Reverse Leakage Current Drain to Source Leakage Current Drain to Source Breakdown Voltage VGS = -8 V VGS = 8 V VDS = -16 V, VGS= 0 V ID = -250 A, VGS = 0 V VGS(th) RDS(ON)1 RDS(ON)2 Gate to Source Threshold Voltage Drain to Source On Resistance Drain to Source On Resistance VGS = VDS, ID =-250 A VGS = -4.5V, ID = -2.3 A VGS = -2.7 V, ID =-1.2 A Table II-F part type IRF7416 (SO-8) Symbol Definition Applied Conditions IGSS IGSS IDSS BVDSS Gate to Source Forward Leakage Current Gate to Source Reverse Leakage Current Drain to Source Leakage Current Drain to Source Breakdown Voltage VGS = -20 V VGS = 20 V VDS = -24 V, VGS= 0 V ID = -250 A, VGS = 0 V VGS(th) RDS(ON)1 RDS(ON)2 Gate to Source Threshold Voltage Drain to Source On Resistance Drain to Source On Resistance VGS = VDS, ID =-250 A VGS = -10 V, ID = -5.6 A VGS = -4.5 V, ID = -2.8 A Limit -100 100 -1.0 -30 -1.0 min 20 35 INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Units nA nA A V V m m Small-Outline SMD Reliability Report Page 13 Table II-G part type IRF7103 (SO-8) Symbol Definition Applied Conditions IGSS IGSS IDSS BVDSS Gate to Source Forward Leakage Current Gate to Source Reverse Leakage Current Drain to Source Leakage Current Drain to Source Breakdown Voltage VGS = 20 V VGS = -20 V VDS = 44 V, VGS= 0 V ID = 250 A, VGS = 0 V VGS(th) RDS(ON)1 RDS(ON)2 Gate to Source Threshold Voltage Drain to Source On Resistance Drain to Source On Resistance VGS = VDS, ID =250 A VGS = 10 V, ID = 2.0 A VGS = 4.5 V, ID = 1.0 A Limit 100 -100 2.0 55 1.0 min 130 200 Units nA nA A V V m m Table II-H part type IRF7201 (SO-8) Symbol Definition Applied Conditions IGSS IGSS IDSS BVDSS Gate to Source Forward Leakage Current Gate to Source Reverse Leakage Current Drain to Source Leakage Current Drain to Source Breakdown Voltage VGS = 20 V VGS = -20 V VDS = 24 V, VGS= 0 V ID = 250 A, VGS = 0 V VGS(th) RDS(ON)1 RDS(ON)2 Gate to Source Threshold Voltage Drain to Source On Resistance Drain to Source On Resistance VGS = VDS, ID =250 A VGS = 10 V, ID = 7.0 A VGS = 4.5 V, ID = 3.5 A Limit 100 -100 2.0 30 1.0 min 30 50 Units nA nA A V V m m Table II-I part type IRF7504 (Micro8) Symbol Definition Applied Conditions IGSS IGSS IDSS BVDSS Gate to Source Forward Leakage Current Gate to Source Reverse Leakage Current Drain to Source Leakage Current Drain to Source Breakdown Voltage VGS = -8 V VGS = 8 V VDS = -16 V, VGS= 0 V ID = 250 A, VGS = 0 V VGS(th) RDS(ON)1 RDS(ON)2 Gate to Source Threshold Voltage Drain to Source On Resistance Drain to Source On Resistance VGS = VDS, ID = -250 A VGS = -4.5 V, ID =-1.2 A VGS = -2.7 V, ID =-0.60 A Limit -100 100 -1 -20 -0.7 min 270 400 INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Units nA nA A V V m m Small-Outline SMD Reliability Report Page 14 Table II-J part type IRF7603 (Micro8) Symbol Definition Applied Conditions IGSS IGSS IDSS BVDSS Gate to Source Forward Leakage Current Gate to Source Reverse Leakage Current Drain to Source Leakage Current Drain to Source Breakdown Voltage VGS = 20 V VGS = -20 V VDS = 24 V, VGS= 0 V ID = 250 A, VGS = 0 V VGS(th) RDS(ON)1 RDS(ON)2 Gate to Source Threshold Voltage Drain to Source On Resistance Drain to Source On Resistance VGS = VDS, ID =250 A VGS = 10 V, ID = 3.7 A VGS = 4.5 V, ID =1.9 A Limit 100 -100 1 30 1 min 35 60 Units nA nA A V V m m Limit -100 100 -1 -20 -0.7 min 90 130 Units nA nA A V V m m Limit 100 -100 1 20 0.7 min 100 170 Units nA nA A V V m m Table II-K part type IRF7604 (Micro8) Symbol Definition Applied Conditions IGSS IGSS IDSS BVDSS Gate to Source Forward Leakage Current Gate to Source Reverse Leakage Current Drain to Source Leakage Current Drain to Source Breakdown Voltage VGS = -8 V VGS = 8 V VDS = -16 V, VGS= 0 V ID = -250 A, VGS = 0 V VGS(th) RDS(ON)1 RDS(ON)2 Gate to Source Threshold Voltage Drain to Source On Resistance Drain to Source On Resistance VGS = VDS, ID =-250 A VGS = -4.5V, ID = -2.4 A VGS = -2.7 V, ID =-1.2 A Table II-L part type IRLMS1902 (Micro6) Symbol Definition Applied Conditions IGSS IGSS IDSS BVDSS Gate to Source Forward Leakage Current Gate to Source Reverse Leakage Current Drain to Source Leakage Current Drain to Source Breakdown Voltage VGS = 8 V VGS = -8 V VDS = 16 V, VGS= 0 V ID = 250 A, VGS = 0 V VGS(th) RDS(ON)1 RDS(ON)2 Gate to Source Threshold Voltage Drain to Source On Resistance Drain to Source On Resistance VGS = VDS, ID =250 A VGS = 4.5 V, ID = 2.2 A VGS = 2.7 V, ID =1.1 A INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 15 Table II-M part type IRLMS6702 (Micro6) Symbol Definition Applied Conditions IGSS IGSS IDSS BVDSS Gate to Source Forward Leakage Current Gate to Source Reverse Leakage Current Drain to Source Leakage Current Drain to Source Breakdown Voltage VGS = -8 V VGS = 8 V VDS = -16 V, VGS= 0 V ID = -250 A, VGS = 0 V VGS(th) RDS(ON)1 RDS(ON)2 Gate to Source Threshold Voltage Drain to Source On Resistance Drain to Source On Resistance VGS = VDS, ID =-250 A VGS = -4.5V, ID = -1.6 A VGS = -2.7 V, ID =-0.80 A Limit -100 100 -1 -20 -0.7 min 200 375 Units nA nA A V V m m Limit -100 100 -1 -30 -1 min 200 400 Units nA nA A V V m m Table II-N part type IRLMS5703 (Micro6) Symbol Definition Applied Conditions IGSS IGSS IDSS BVDSS Gate to Source Forward Leakage Current Gate to Source Reverse Leakage Current Drain to Source Leakage Current Drain to Source Breakdown Voltage VGS = -20 V VGS = 20 V VDS = -24 V, VGS= 0 V ID = -250 A, VGS = 0 V VGS(th) RDS(ON)1 RDS(ON)2 Gate to Source Threshold Voltage Drain to Source On Resistance Drain to Source On Resistance VGS = VDS, ID =-250 A VGS = -10 V, ID = -1.6 A VGS = -4.5 V, ID =-0.80 A Table II-O part type IRLMS1503 (Micro6) Symbol Definition Applied Conditions IGSS IGSS IDSS BVDSS Gate to Source Forward Leakage Current Gate to Source Reverse Leakage Current Drain to Source Leakage Current Drain to Source Breakdown Voltage VGS = 20 V VGS = -20 V VDS = 24 V, VGS= 0 V ID = 250 A, VGS = 0 V VGS(th) RDS(ON)1 RDS(ON)2 Gate to Source Threshold Voltage Drain to Source On Resistance Drain to Source On Resistance VGS = VDS, ID =250 A VGS = 10 V, ID = 2.2 A VGS = 4.5 V, ID = 1.1 A Limit 100 -100 1.0 30 1.0 min 100 200 INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Units nA nA A V V m m Small-Outline SMD Reliability Report Page 16 Table II-P part type IRLML2404 (Micro3) Symbol Definition Applied Conditions IGSS IGSS IDSS BVDSS Gate to Source Forward Leakage Current Gate to Source Reverse Leakage Current Drain to Source Leakage Current Drain to Source Breakdown Voltage VGS = 8 V VGS = -8 V VDS = 16 V, VGS= 0 V ID = 250 A, VGS = 0 V VGS(th) RDS(ON)1 RDS(ON)2 Gate to Source Threshold Voltage Drain to Source On Resistance Drain to Source On Resistance VGS = VDS, ID =250 A VGS = 4.5 V, ID = 0.93 A VGS = 2.7 V, ID = 0.47 A Limit 100 -100 1.0 30 0.7 min 250 350 Units nA nA A V V m m Table II-Q part type IRLML6302 (Micro3) Symbol Definition Applied Conditions IGSS IGSS IDSS BVDSS Gate to Source Forward Leakage Current Gate to Source Reverse Leakage Current Drain to Source Leakage Current Drain to Source Breakdown Voltage VGS = -8 V VGS = 8 V VDS = -16 V, VGS= 0 V ID = -250 A, VGS = 0 V VGS(th) RDS(ON)1 RDS(ON)2 Gate to Source Threshold Voltage Drain to Source On Resistance Drain to Source On Resistance VGS = VDS, ID =-250 A VGS = -4.5V, ID = -0.61 A VGS = -2.7 V, ID =-0.31 A Limit -100 100 -1 -20 -0.7 min 600 900 Units nA nA A V V m m Table II-R part type IRF7413 (SO-8) Symbol Definition Applied Conditions IGSS IGSS IDSS BVDSS Gate to Source Forward Leakage Current Gate to Source Reverse Leakage Current Drain to Source Leakage Current Drain to Source Breakdown Voltage VGS = 20 V VGS = -20 V VDS = 24 V, VGS= 0 V ID = 250 A, VGS = 0 V VGS(th) RDS(ON)1 RDS(ON)2 Gate to Source Threshold Voltage Drain to Source On Resistance Drain to Source On Resistance VGS = VDS, ID =250 A VGS = 10 V, ID = 7.3 A VGS = 4.5 V, ID = 3.7 A Limit 100 -100 1.0 30 1.0 min 11 18 INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Units nA nA A V V m m Small-Outline SMD Reliability Report Page 17 Test Purposes & Common Failure Mechanisms High Temperature Reverse Bias (HTRB) Purpose: To accelerate temperature/voltage failure mechanisms and detect those resulting from manufacturing defects. This test redistributes mobile ions by means of temperature and voltage stress which may result in junction leakage when sufficient ionic contamination is present and accelerate failures resulting from encapsulated and/or die-coated impurities. This test explicitly accelerates breakdown voltage degradation on inadequate termination structures. Description: Devices are biased at rated VDSS at TJ (Max) Common Failure Mechanisms: Ionic Contamination, diffusion defects, oxide defects, metallization defects, surface inversion and surface charge movement, irregularities in the crystal lattice structure, assembly induced foreign material, moisture and hydrogen entrapment. Common Failure Mode: Parametric shifts resulting from increased leakage. Sensitive Parameters: BVDSS, IDSS, VGS(th) & RDS(ON) Typical Conditions: 1000 hours at TA = 150 C, VDSS = 100% rated BVDSS Circuit Configuration INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 18 Test Purposes & Common Failure Mechanisms High Temperature Gate Bias (HTGB) Purpose: To electrically stress the gate oxide and accelerate dielectric breakdown failures resulting from imperfections in the gate oxide structure. Additionally, to align mobile ions by means of temperature and voltage stress which result in leakage paths between terminals if ionic contamination is present. Description: Devices are biased at rated VGSS at TJ (Max) Common Failure Mechanisms: Contamination of the gate oxide during wafer fabrication, assembly induced foreign material, metallization defects, diffusion defects, surface inversion and surface charge movement. Common Failure Mode: Gate oxide rupture or leakage. Sensitive Parameters: IGSS & VGS(th) Typical Conditions: 1000 hours at TA = 150 C, VGSS = 100% or 80% rated VGSS Circuit Configuration INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 19 Test Purposes & Common Failure Mechanisms Temperature Humidity Bias (THB) Purpose: To determine the moisture resistance of the package. To accelerate both moisture and temp/voltage failure mechanisms and detect those with defects resulting from manufacturing aberrations. This test aligns mobile ions by means of temperature and voltage stresses which will result in leakage paths between terminals if ionic contamination is present. Check the purity of the encapsulation material to die interface. The presence of both moisture and bias rapidly accelerates contamination related failures. Description: Devices are biased at rated VDSS in a moisture chamber while being subjected to an elevated humidity and temperature. Common Failure Mechanisms: Ionic Contamination, moisture penetration, chemical corrosion, electrolytic corrosion from applied bias in presence of elevated humidity/temperature, electrolytic corrosion from dissimilar metals, metallization defects, diffusion defects, surface inversion and surface charge movement. Common Failure Mode: Parametric shifts due to the penetration of moisture and subsequent metallization corrosion. Sensitive Parameters: IDSS , IGSS , & RDS(ON) Typical Conditions: 1000 hours at TA = 85 C and RH = 85% , VDSS = 100% rated BVDSS Circuit Configuration INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 20 Test Purposes & Common Failure Mechanisms Temperature Cycling (TC) Purpose: To determine the resistance of the device to extreme temperatures and the transition between those extremes. These stresses expose the device to mechanical stress by reason of the thermal mismatch between materials. These conditions may be encountered in equipment operated intermittently in low temperature areas or during transportation. Description: Devices are cycled between a cold chamber and a hot chamber. Common Failure Mechanisms: Die bond fatigue, wire bond fatigue, thermo-mechanical fatigue of leads, heatsink, leadframe, packaging material, silicon/metal interfaces and metal/metal interfaces, die cracking, junctions defects, die metallization defects.. Common Failure Mode: Parametric shifts in the overall on-resistance of the device caused by thermo-mechanical fatigue of the interconnect and/or bonding materials. Catastrophic failures due to die and/or package cracking. Sensitive Parameters: IDSS & RDS(ON) Typical Conditions: 1000 cycles at TA = + 150 C to - 55 C INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 21 Reliability Data INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 22 HTGB - High Temperature Gate Bias 1) P-channel Device with Gate Oxide of 250 A Part Number IRLML6302 IRF7504 IRF7504 IRF7604 IRLMS6702 IRF7404 IRF7404 IRF7404 IRF7404 IRF7404 IRF7304 IRF7304 IRF7314 IRF7314 IRF7314 IRF7422D2 IRF7422D2 IRF7422D2 Package Type Micro3 Micro8 Micro8 Micro8 Micro6 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 Wafer lot Number 702347A 702177A 702075 704504 702177 701685-O 701890 702169A 702785 703743 4W6K 4W6K2 702924 702924 702924 704618A 705171 704935 Stress Condition VGSS(V) TJ (C) 8 150 8 150 8 150 10 150 8 150 8 150 8 150 8 150 10 150 10 150 10 150 10 150 8 150 10 150 10 150 10 150 10 150 10 150 Total devices-failures Total devices-dielectric failures Total device-hours 24 hours S.S. Fails 35 0 30 0 30 0 60 0 35 0 60 0 120 0 30 0 60 0 120 0 60 0 60 0 30 0 30 0 60 0 523 0 521 0 520 0 2384 1 2384 0 57,216 168 hours S.S. Fails 35 0 30 0 30 0 60 0 35 0 60 0 120 1o 30 0 60 0 120 0 60 0 60 0 30 0 30 0 60 0 39 0 39 0 39 0 500 hours S.S. Fails 35 0 30 0 30 0 60 0 35 0 60 0 120 1o 30 0 60 0 120 0 60 0 60 0 30 0 30 0 60 0 39 0 39 0 39 0 1000 hours S.S. Fails 35 0 30 0 30 0 60 0 35 0 60 0 120 1o 30 0 60 0 120 0 60 0 60 0 30 0 30 0 60 0 39 0 39 0 39 0 937 1 937 1 1.92E+05 937 1 937 1 5.03E+05 937 1 937 1 9.72E+05 2) P-channel Device with Gate Oxide of 450 A Part Number IRF7506 IRF7606 IRF7606 IRLMS5703 IRLML5103 IRF7321D2 IRF7321D2 IRF7321D2 IRF7406 IRF7406 IRF7416 IRF7416 IRF7416 IRF7416 IRF7316 Package Type Micro8 Micro8 Micro8 Micro6 Micro3 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 Wafer lot Number 700950 702626A 702504 702063 702403 702671/E096 702672X/7E109 702671/7F145 702651 702341A 701979D 702151A 702513A 702404 702671 Stress Condition VGSS(V) TJ (C) 16 150 16 150 16 150 16 150 16 150 16 150 16 150 16 150 16 150 16 150 16 150 16 150 16 150 16 150 16 150 Total devices-failures Total devices-dielectric failures Total device-hours 24 hours S.S. Fails 30 0 60 0 30 0 35 0 35 0 30 0 30 0 30 0 120 0 30 0 60 0 60 0 30 0 30 0 30 0 168 hours S.S. Fails 30 0 60 0 30 0 35 0 35 0 30 0 30 0 30 0 120 0 30 0 60 0 60 0 30 0 30 0 30 0 500 hours S.S. Fails 30 0 60 0 30 0 35 0 35 0 30 0 30 0 30 0 120 0 30 0 60 0 60 0 30 0 30 0 30 0 1000 hours S.S. Fails 30 0 60 0 30 0 35 0 35 0 30 0 30 0 30 0 120 0 30 0 60 0 60 0 30 0 640 0 640 0 15,360 640 0 640 0 1.08E+05 640 0 640 0 3.20E+05 610 0 640 0 6.25E+05 30 0 Note: o. At 64 hours, 1 unit failed IDSS(147 A), IGSS(> 1 A). FA-96-1278-a found gate oxide rupture to be the cause of failure. INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 23 HTGB - High Temperature Gate Bias 3) N-channel Device with Gate Oxide of 250 A Part Number IRLML2402 IRLMS1902 IRF7601 IRF7521D1 IRF7401 IRF7401 IRF7401 IRF7401 IRF7401 IRF7401 IRF7421D1 Package Type Micro3 Micro6 Micro8 Micro8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 Wafer lot Number 702001 702114 702593 702114 700216-X 700216-O 700252-O 700252 700582 700998 1B1S/7E095 Stress Condition VGSS(V) TJ (C) 8 150 8 150 10 150 8 150 8 150 8 150 8 150 8 150 8 150 8 150 10 150 Total devices-failures Total devices-dielectric failures Total device-hours 24 hours S.S. Fails 70 0 35 0 30 0 30 0 30 0 30 0 30 1a 60 0 60 1b 60 0 90 0 168 hours S.S. Fails 70 0 35 0 30 0 30 0 30 0 30 0 30 1a 60 0 60 1b 60 0 90 1q 500 hours S.S. Fails 70 0 35 1p 30 0 30 0 30 0 30 0 30 1a 60 0 60 1b 60 0 90 1q 1000 hours S.S. Fails 70 0 35 1p 30 0 30 0 30 0 30 0 30 1a 525 2 525 1 12,600 525 3 525 1 8.82E+04 525 4 25 2 2.63E+05 465 6 465 4 4.95E+05 60 60 90 1b 2c 1q Note: a. At 24 hours, 1 unit failed all parameters but VF. FA-96-1160-a found foreign material on die surface to be the cause of failure. b. At 24 hours, 1 unit failed all parameters but VF. FA-96-1196-a found gate oxide rupture to be the cause of failure. c. At 660 hours, 2 units failed all parameters but VF. FA-96-1192-a found gate oxide rupture to be the cause of failure. FA-96-1192-b found gate oxide rupture to be the cause of failure. p. At 419 hrs, 1 unit failed all parameters but VF q. At 250 hrs, 1 unit failed IDSS(10 mA) and BVDSS(0 V). FA found failure site in field plate. INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 24 HTGB - High Temperature Gate Bias 4) N-channel Device with Gate Oxide of 450 A Part Number IRLML5103 IRF7603 IRF7603 IRF7603 IRF7523D1 IRF7523D1 IRF7523D1 IRF7403 IRF7403 IRF7403 IRF7403 IRF7403 IRF7403 IRF7403 IRF7403 IRF7403 IRF7413 IRF7413 IRF7413 IRF7413 IRF7413 IRF7413 IRF7413 IRF7303 IRF7313 IRF7103 IRF7201 Package Type Micro3 Micro8 Micro8 Micro8 Micro8 Micro8 Micro8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 Wafer lot Number 702610AA 702153 701955 704022 702578/7E110 4C8U/7E095 702578/7F146 700400 700771 700400-X 700769 700217 700344 700400 703867 4P9X 702013 701974 701929A 702055X 704101A 704102A 704103A 703868 702668 701962A 702147 Stress Condition VGSS(V) TJ (C) 16 150 16 150 16 150 16 150 16 150 16 150 16 150 20 150 20 150 20 150 20 150 20 150 20 150 20 150 16 150 16 150 16 150 16 150 16 150 16 150 16 175 16 175 16 175 16 150 16 150 16 150 16 150 Total devices-failures Total devices-dielectric failures Total device-hours 24 hours S.S. Fails 35 0 30 0 30 0 24 0 30 1r 30 0 30 0 21 0 39 0 21 0 30 0 30 0 27 0 45 0 120 0 60 0 60 0 60 0 60 0 30 0 78 0 78 0 78 0 120 0 30 0 30 0 30 0 1256 1 1256 0 30,144 168 hours S.S. Fails 35 0 30 0 30 0 24 0 30 1r 30 0 30 0 21 0 39 0 21 0 30 0 30 0 27 0 45 0 120 0 60 0 60 1d 60 0 60 0 30 0 78 0 78 0 78 0 120 0 30 0 30 0 30 0 1256 2 1256 0 2.11E+05 500 hours S.S. Fails 35 0 30 0 30 0 24 0 30 1r 30 0 30 0 21 0 39 0 21 0 30 0 30 0 27 0 45 0 120 0 60 0 60 1d 60 0 60 0 30 0 78 0 78 0 1000 hours S.S. Fails 35 0 30 0 30 0 24 0 30 1r 30 0 30 0 21 0 39 0 21 0 30 0 30 0 27 0 45 0 120 0 60 0 60 1d 60 0 60 0 30 0 78 0 78 0 120 30 30 30 120 30 30 30 0 0 0 0 1256 2 1256 0 6.28E+05 0 0 0 0 1178 2 1178 0 1.22E+06 Note: d. At 160 hours, 1 unit failed IDSS(82 A). It is a parametric failure. r. At 95 hours, 1 unit failed IDSS(5.94 A). It is a parametric failure INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 25 HTRB - High Temperature Reverse Bias 1) P-channel Device Part Number IRLMS6702 IRLMS5703 IRLMS5703 IRLML5103 IRF7504 IRF7506 IRF7504 IRF7606 IRF7404 IRF7404 IRF7404 IRF7406 IRF7416 IRF7416 IRF7416 IRF7416 IRF7321D2 IRF7321D2 IRF7422D2 IRF7422D2 IRF7422D2 Package Type Micro6 Micro6 Micro6 Micro3 Micro8 Micro8 Micro8 Micro8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 Wafer lot Number 702177 701980 702063 702403 702177A 700950 702075 702504 701685-O 701890 702169A 702341A 701979D 702151A 702513A 702404 702671/E096 702672/7E109 704618/7E096 705171/7E109 704835/7F145 Stress Condition VDSS(V) TJ (C) 20 150 30 150 30 150 30 150 20 150 30 150 20 150 30 150 20 150 20 150 20 150 30 150 30 150 30 150 30 150 30 150 24 110 24 110 20 115 20 115 20 115 Total devices-failures Total device-hours 48 hours S.S. Fails 35 0 70 0 35 0 35 0 30 0 30 0 30 0 30 0 60 0 60 0 30 0 30 0 60 0 60 0 30 0 30 0 30 0 30 0 523 0 521 0 520 0 2309 0 110,832 330 hours S.S. Fails 35 0 70 0 35 0 35 0 30 0 30 0 30 0 30 0 60 0 60 0 30 0 30 0 60 0 60 0 30 0 30 0 30 0 30 0 39 0 39 0 39 0 660 hours S.S. Fails 35 0 70 0 35 0 35 0 30 0 30 0 30 0 30 0 60 0 60 0 30 0 30 0 60 0 60 0 30 0 30 0 30 0 30 0 39 0 39 0 39 0 1000 hours S.S. Fails 35 0 70 0 35 0 35 0 30 0 30 0 30 0 30 0 60 0 60 0 30 0 30 0 60 0 60 0 30 0 30 0 30 0 30 0 39 0 39 0 39 0 862 0 3.54E+05 862 0 6.38E+05 862 0 9.31E+05 INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 26 HTRB - High Temperature Reverse Bias 2) N-channel Device Part Number IRLML2402 IRLML2402 IRLML2803 IRLMS1503 IRLMS1902 IRF7603 IRF7603 IRF7523D1 IRF7523D1 IRF7523D1 IRF7401 IRF7401 IRF7401 IRF7403 IRF7403 IRF7403 IRF7403 IRF7403 IRF7403 IRF7403 IRF7413 IRF7413 IRF7413 IRF7103 IRF7201 IRF7421D1 Package Type Micro3 Micro3 Micro3 Micro6 Micro6 Micro8 Micro8 Micro8 Micro8 Micro8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 Wafer lot Number 702001 702115 702610 700950 702114 702153 701955 702578/7E110 4C8U/7E095 702578/7F146 700216-X 700216-O 702061A 700217-O 700400-X 700400 700344 704101A 704102A 704103A 702013 701974 701929A 701962A 702147 1B1S/7E095 Stress Condition VGSS(V) TJ (C) 20 150 20 150 30 150 30 150 20 150 30 150 30 150 24 110 24 110 24 110 20 150 20 150 20 150 30 150 30 150 30 150 30 150 30 175 30 175 30 175 30 150 30 150 30 150 30 150 30 150 24 115 Total devices-failures Total device-hours 48 hours S.S. Fails 98 0 35 0 35 0 70 0 35 0 30 0 30 0 30 0 30 0 30 0 30 0 30 0 30 0 30 0 30 0 30 0 30 0 78 0 78 0 78 0 60 0 60 0 60 0 30 0 30 0 90 0 1197 0 57,456 330 hours S.S. Fails 98 0 35 0 35 0 70 0 35 0 30 0 30 0 30 0 30 0 30 0 30 0 30 0 30 0 30 0 30 0 30 0 30 0 78 0 78 0 78 0 60 0 60 0 60 0 30 0 30 0 90 0 1197 0 3.95E+05 660 hours S.S. Fails 98 1e 35 0 35 0 70 0 35 0 30 0 30 0 30 30 30 30 0 30 0 30 0 30 0 30 0 30 0 30 0 78 0 78 0 1000 hours S.S. Fails 98 1e 35 0 35 0 70 0 35 0 30 0 30 0 30 30 30 30 30 30 30 78 78 0 0 0 0 0 0 0 0 0 60 60 60 30 30 90 60 60 60 30 30 90 0 0 1f 0 0 0 0 0 0 0 0 0 1197 1 7.90E+05 1029 2 1.14E+06 Note: e. At 635 hours, 1 unit failed Vth(536 mV). Limit is 700 mV. FA-96-1337-a found ionic contamination to be the cause of failure. f. At 1000 hour, 1 unit failed IGSS(> 1mA), Vth(130 mV), and RDON(4.3 ). FA-96-1323-a found probe mark to be the cause of failure. INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 27 THB - Temperature Humidity Bias (85 C/ 85% RH) 1) P-channel Device Part Number IRLMS6702 IRLMS5703 IRLMS5703 IRLML5103 IRF7504 IRF7506 IRF7504 IRF7606 IRF7404 IRF7404 IRF7406 IRF7416 IRF7416 IRF7416 IRF7316 IRF7321D2 IRF7321D2 IRF7321D2 IRF7422D2 IRF7422D2 IRF7422D2 Package Type Micro6 Micro6 Micro6 Micro3 Micro8 Micro8 Micro8 Micro8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 Wafer lot Number 702177 701980 702063 702403 702177A 700950 702075 702504 701890 702169A 702341A 701979D 702513A 702404 702671 702671/E096 702672/7E109 702671/7F145 704618/7E096 705171/7E109 704835/7F145 Stress Condition VDSS(V) % RH TJ (C) 20 85 85 30 85 85 30 85 85 30 85 85 20 85 85 30 85 85 20 85 85 30 85 85 20 85 85 20 85 85 30 85 85 30 85 85 30 85 85 30 85 85 30 85 85 30 85 85 30 85 85 30 85 85 20 85 85 20 85 85 20 85 85 Total devices-failures Total device-hours 48 hours S.S. Fails 35 0 70 0 23 0 35 0 30 0 30 0 30 0 30 0 60 0 30 0 30 0 60 0 30 0 30 0 30 0 30 0 30 0 30 0 39 0 39 0 39 0 330 hours S.S. Fails 35 0 70 0 23 0 35 0 30 0 30 0 30 0 30 0 60 0 30 0 30 0 60 0 30 0 30 0 30 0 30 0 30 0 30 0 39 0 39 0 39 0 660 hours S.S. Fails 35 0 70 0 23 0 35 0 30 1l 30 0 30 0 30 0 60 0 30 0 30 0 60 0 30 0 30 0 30 0 30 0 30 0 30 0 39 0 39 0 39 0 1000 hours S.S. Fails 35 2m 70 1n 23 0 35 0 30 1l 30 0 30 0 30 0 60 0 30 0 30 0 60 0 30 0 30 0 30 0 30 0 30 0 30 0 39 0 39 0 39 0 760 0 36,480 760 0 2.51E+05 760 1 5.02E+05 760 4 7.60E+05 Note: m. At 1000 hours, 2 units failed. 1 failed IGSS(> 1 A), IDSS(9 A). 1 failed IDSS(2.3 A). Both units recovered after sitting on shelf. n. At 739 hours, 1 unit failed IGSS(342 nA). This device recovered after sitting on shelf. l. At 743 hours, 1 unit failed IDSS(40.6 A). It is a parametric failure, not a functional failure. INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 28 THB - Temperature Humidity Bias (85 C/ 85% RH) 2) N-channel Device Part Number IRLMS1503 IRLMS1902 IRLML2402 IRLML2803 IRF7603 IRF7603 IRF7523D1 IRF7523D1 IRF7523D1 IRF7521D1 IRF7401 IRF7401 IRF7401 IRF7401 IRF7403 IRF7403 IRF7403 IRF7403 IRF7413 IRF7103 IRF7201 Package Type Micro6 Micro6 Micro3 Micro3 Micro8 Micro8 Micro8 Micro8 Micro8 Micro8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 Wafer lot Number 702177 702114 702001 702610 702153 701955 702578/7E110 4C8U/7E095 702578/7F146 702578 700216-O 700216-X 700252-O 702061A 700217-O 700400-X 700400 700344 702055X 702166 702147 Stress Condition VDSS(V) % RH TJ (C) 30 85 85 20 85 85 20 85 85 30 85 85 30 85 85 30 85 85 30 85 85 30 85 85 30 85 85 30 85 85 20 85 85 20 85 85 20 85 85 20 85 85 30 85 85 30 85 85 30 85 85 30 85 85 30 85 85 55 85 85 30 85 85 Total devices-failures Total device-hours 48 hours S.S. Fails 70 0 35 0 105 0 34 0 30 0 30 0 30 0 30 0 30 0 90 0 30 1g 30 0 30 0 30 0 60 0 30 0 30 0 30 0 30 0 30 0 30 0 330 hours S.S. Fails 70 0 35 0 105 0 34 0 30 0 30 0 30 0 30 0 30 0 90 0 30 1g 30 0 30 0 30 0 60 1h 30 0 30 0 30 0 30 0 30 0 30 0 660 hours S.S. Fails 70 0 35 0 105 0 34 0 30 0 30 0 30 0 30 0 30 0 90 0 30 1g 30 0 30 0 30 0 60 1h 30 0 30 0 30 1i 30 0 30 0 30 0 1000 hours S.S. Fails 70 0 844 1 40,512 844 2 2.79E+05 844 3 5.57E+05 809 3 8.32e+05 105 34 30 30 30 30 30 90 30 30 30 30 60 30 30 30 30 30 30 Note: g. At 72 hours, 1 unit failed IDSS(20 A). It is a parametric failure, not a functional failure. h. At 96 hour, 1 unit failed IGSS+(144 A), IGSS-(202 A), BVDSS(24.6 V), and IDSS (228 A). This device recovered after 24 hours bake @ 130 C. Moisture ingression is the probable cause of failure. i. At 700 hours, 1 unit failed IDSS(48 A). It is a parametric failure, not a functional failure. INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 0 0 0 0 0 0 0 0 1g 0 0 0 1h 0 0 1i 0 0 0 Small-Outline SMD Reliability Report Page 29 TC - Temperature Cycling 1) P-channel Device Part Number IRLML6302 IRLML5103 IRLMS5703 IRLMS1503 IRF7504 IRF7504 IRF7506 IRF7606 IRF7504 IRF7422D2 IRF7422D2 IRF7422D2 IRF7321D2 IRF7321D2 IRF7321D2 IRF7404 IRF7404 IRF7404 IRF7416 IRF7416 IRF7416 IRF7316 IRF7314 IRF7389 Package Type Micro3 Micro3 Micro6 Micro6 Micro8 Micro8 Micro8 Micro8 Micro8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 Wafer lot Number 702347A 702403A 702063 702177 702177A 702075 700950 702504 702075 704618/7E096 705171/7E109 704835/7F145 702671/E096 702672/7E109 702671/7F145 701890 702169A 701890 701979D 702513A 702404 702671 702924 702671 Stress Condition T1 (C) T2 (C) -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 Total devices-failures Total device-hours 50 cycles S.S. Fails 35 0 35 0 35 0 35 0 30 0 30 0 30 0 30 0 28 0 39 0 39 0 39 0 29 0 30 0 28 0 60 0 30 0 60 0 60 0 30 0 30 0 30 0 30 0 69 0 330 cycles S.S. Fails 35 0 35 0 35 0 35 0 30 0 30 0 30 0 30 0 28 0 39 0 39 0 39 0 29 0 30 0 28 0 60 0 30 0 60 0 60 0 30 0 30 0 30 0 30 0 69 0 660 cycles S.S. Fails 35 1k 35 0 35 0 35 0 30 0 30 0 30 0 30 0 28 0 39 0 39 0 39 0 29 0 30 0 28 0 60 0 30 0 60 0 60 0 30 0 30 0 30 0 30 0 69 0 1000 cycles S.S. Fails 35 1k 35 0 35 0 35 0 30 0 30 0 30 0 30 0 28 0 39 0 39 0 39 0 29 0 30 0 28 0 60 0 30 0 60 0 60 1j 30 0 30 0 30 0 30 0 69 0 891 0 44,550 891 0 2.94E+05 891 1 5.88E+05 891 2 8.91E+05 Note: j. At 1000 cycles, 1 unit failed IDSS(12.43 A). It is a parametric failure, not a functional failure. k. At 660 cycles, 1 unit failed IGSS+(3.44 A) and IGSS-(525 nA). It is a parametric failure, not a functional failure. INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 30 TC - Temperature Cycling 2) N-channel Device Part Number IRLML2402 IRLML2402 IRLML2803 IRLMS1902 IRF7603 IRF7603 IRF7523D1 IRF7523D1 IRF7523D1 IRF7421D1 IRF7421D1 IRF7421D1 IRF7421D1 IRF7401 IRF7401 IRF7401 IRF7401 IRF7403 IRF7403 IRF7403 IRF7403 IRF7413 IRF7313 IRF7389 IRF7103 IRF7201 Package Type Micro3 Micro3 Micro3 Micro6 Micro8 Micro8 Micro8 Micro8 Micro8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 Wafer lot Number 702001 702115 702610 702114 702153 701955 702578/7E110 4C8U/7E095 702578/7F146 701955 1B1S/7E095 1B1S/7E095 1B1S/7E095 700216-O 700216-X 700252-O 702061A 700217-O 700400-X 700400 700344 702055X 702668 703656 701962A 702147 Stress Condition T1 (C) T2 (C) -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -25 125 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 -55 150 Total devices-failures Total device-hours 50 cycles S.S. Fails 105 0 35 0 35 0 35 0 30 0 30 0 60 0 60 0 60 0 48 0 60 0 60 0 60 0 30 0 30 0 30 0 30 0 60 0 30 0 30 0 30 0 30 0 30 0 69 0 60 0 30 0 1,167 0 56,016 330 cycles S.S. Fails 105 0 35 0 35 0 35 0 30 0 30 0 60 0 60 0 60 0 48 0 60 0 60 0 60 0 30 0 30 0 30 0 30 0 60 0 30 0 30 0 30 0 30 0 30 0 69 0 60 0 30 0 1,167 0 3.85E+05 660 cycles S.S. Fails 105 0 35 0 35 0 35 0 30 0 30 0 60 0 60 0 60 0 48 0 60 0 60 0 60 0 30 0 30 0 30 0 30 0 60 0 30 0 30 0 30 0 30 0 30 0 69 0 60 0 30 0 1,167 0 7.70E+05 1000 cycles S.S. Fails 105 0 35 0 35 0 35 0 30 0 30 0 60 0 60 0 60 0 48 0 60 0 60 0 60 0 30 0 30 0 30 0 30 0 60 0 30 0 30 0 30 0 30 0 30 0 69 0 30 0 1,167 0 1.17E+06 INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 31 Failure Rate Estimate INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 32 A) Oxide Breakdown Failure Mechanism Oxide breakdown is greatly accelerated by high electric field. International Rectifier's internal data found infant motality failures due to defect-related oxide breakdown failure mechanism correlate well with AT&T Voltage Acceleration Model. Assumptions: 1) AT&T Voltage Acceleration Model1 AV = exp [C*(V1-V2)/tOX] where C = 290 A/volt 2) Activation energy of 0.4 eV 3) Tuse = 90 C 4) tOX = 250 A and Vuse = 3.3 volts for the 20 volts device 5) tOX = 450 A and Vuse = 10 volts for the 30 volts device Calculations: 1) Temperature Acceleration = exp{(0.4/8.62E-5) * (1/(273+90) - 1/(273+150))} = 6.13 2) Voltage Acceleration = exp{(290/250) * (8-3.3)} = 233 for the 20 volts device = exp{(290/450) * (20-10)} = 629 for the 30 volts device 3) Total device hours and demonstrated failure rate at the use condition: BVDSS Rating 20V 20V 30V 30V Polarity P-Ch N-Ch P-Ch N-Ch HTGB Test VGSS(V) Dev-hrs 8 5.22E+05 10 4.50E+05 8 3.75E+05 10 1.20E+05 16 535,000 20 213,000 16 1.22E+06 Total 1 3.43+06 @ Use Condition A.F. Dev-hrs 1430 7.46E+08 14,549 6.55E+09 1430 5.36E+08 14,549 1.75E+09 293 1.57E+08 3857 8.22E+08 293 3.56E+08 Number TDDB fails 1 0 3 1 0 0 0 FIT Rate @60% UCL 5 0.56 1.13E+10 0.13 0.89 5.85 0.58 Klinger, David J. et al., eds. AT&T Reliability Manual New York: Van Nostrand Reinhold, 1990 INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 33 B) Ionic Contamination Failure Mechanism At elevated temperature, positively charged ions will be rearranged under influence of electric field to cause higher leakage current or shift in threshold voltage. Failure can be recovered with a high temperature bake without bias, and can be reproduced under high temperature reverse bias condition. Assumptions: 1) Activation energy of 1.0 eV 2) Tuse = 90 C Calculations: 1) Temperature Acceleration = exp{(1.0/8.62E-5) * (1/(273+90) - 1/(273+150))} = 93 2) Total device hours and demonstrated failure rate at the use condition: Polarity P-Ch N-Ch HTRB Test TJ (C) Dev-hrs 150 9.31E+05 150 1.14E+06 Total 2.07E+06 @ Use Condition A.F. Dev-hrs 93 8.66E+07 93 1.06E+08 1.93E+08 Number Ionic Fails 0 1 FIT Rate @60% UCL 10.58 19.08 1 10.50 INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Page 34 Variable Data WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 : HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 35 PRE/POST ELECTRICAL DATA High Temperature Reverse Bias (HTRB) 1. IRF7403 (Sample size of 30) Symbol Applied Condition Pre Data Mean 1000 hrs Mean Mean Shift Specification Min. Max. CPK IGSS+ VGS = 20V 22.9 nA 6.5 nA 72.8 nA 8.8 nA 49.9 nA 100 nA 3.93 IGSS- VGS = - 20V -0.90 nA 0.56 nA -1.6 nA 1.7 nA -0.70 nA -100 nA 58.96 BVDSS ID = 250 A VGS = 0 V VDS = VGS ID = 250 A VDS = 24 V VGS = 0 V VGS = 10 V ID = 4.0 A 37.21 V 0.39V 37.40 V 0.39 V 0.19 V 30 V 6.14 2.49 V 0.04 V 2.47 V 0.04 V -0.02 V 9.9 nA 36.8 nA 35.2 nA 54.1 nA 15.8 nA 1 A 8.96 16.1 m 0.3 m 16.6 m 0.6 m 0.5 m 22 m 6.18 VGS(th) IDSS RDS(ON) 1.0 V 12.45 2. IRF7401 (Sample Size of 30) Symbol Applied Condition Pre Data Mean 1500 hrs Mean Mean Shift Specification Min. Max. CPK IGSS+ VGS = 8 V 4.3 nA 4.4 nA 1.6 nA 1.4 nA -2.7 nA 100 nA 7.28 IGSS- VGS = - 8V -4.3 nA 4.1 nA -1.4 nA 0.9 nA 2.9 nA -100 nA 7.82 BVDSS ID = 250 A VGS = 0 V VDS = VGS ID = 250 A VDS = 16 V VGS = 0 V VGS = 4.5 V ID = 4.1 A 26.01 V 0.47 V 26.18 V 0.41 V 0.17 V 20 V 4.24 1.14 V 0.04V 1.14 V 0.04 V 0.00 V 48.3 nA 33.8 nA 54.7 nA 27.8 nA 6.4 nA 1 A 9.37 14.0 m 0.6 m 15.0 m 1.0 m 1.0 m 22 m 4.52 VGS(th) IDSS RDS(ON) 0.7 V 4.10 INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 36 PRE/POST ELECTRICAL DATA High Temperature Reverse Bias (HTRB) 3. IRF7404 (Sample Size of 30) Symbol Applied Condition Pre Data Mean 1000 hrs Mean Mean Shift Specification Min. Max. CPK IGSS+ VGS = 8V 3.6 nA 4.2 nA 1.2 nA 0.9 nA -2.4 nA 100 nA 7.65 IGSS- VGS = - 8V -4.6 nA 4.1 nA -1.4 nA 1.4 nA 3.2 nA -100 nA 7.84 BVDSS ID =-250 A VGS = 0 V VDS =VGS ID =-250 A VDS = -16 V VGS = 0 V VGS = -4.5 V ID = -3.2 A -25.50 V 1.07 V -25.29 V 0.12 V 0.21 V -20 V 1.71 -0.86 V 0.04 V -0.86 V 0.04 V 0.00V -4.6 nA 6.5 nA -0.4 nA 1.0 nA 4.2 nA -1 A 51.17 29.5 m 0.5 m 30.1 m 0.9 m 0.5 m 40 m 6.66 VGS(th) IDSS RDS(ON) -0.7 V 1.21 4. IRF7504 (Sample Size of 30) Symbol Applied Condition Pre Data Mean 1000 hrs Mean Mean Shift Specification Min. Max. CPK IGSS+ VGS = 8V 12.3 nA 14.4 nA 4.2 nA 4.0 nA -8.1 nA 100 nA 2.03 IGSS- VGS = - 8V -9.9 nA 10.9 nA -4.5 nA 3.8 nA 5.4 nA -100 nA 2.76 BVDSS ID =-250 A VGS = 0 V VDS =VGS ID =-250 A VDS = -16 V VGS = 0 V VGS = -4.5 V ID = -1.2 A -25.15 V 0.58 V -25.08 V 0.52 V 0.07 V -20 V 2.95 -0.96 V 0.03 V -0.96 V 0.03 V 0.00V -25.2 nA 40.4 nA -20.6 nA 27.8 nA 4.6 nA -1 A 8.05 169.9 m 3.6 m 170.9 m 0.9 m 3.6 m 270 m 9.38 VGS(th) IDSS RDS(ON) -0.7 V 2.87 INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 37 PRE/POST ELECTRICAL DATA High Temperature Reverse Bias (HTRB) 5. IRLMS6702 (Sample Size of 35) Symbol Applied Condition Pre Data Mean 1000 hrs Mean Mean Shift Specification Min. Max. CPK IGSS+ VGS = 8V 17.5 nA 19.3 nA 7.6 nA 5.9 nA -9.9 nA 100 nA 1.42 IGSS- VGS = - 8V -16.8 nA 18.5 nA -7.2 nA 5.3 nA 9.6 nA -100 nA 1.50 BVDSS ID =-250 A VGS = 0 V VDS =VGS ID =-250A VDS = -16 V VGS = 0 V VGS = -4.5 V ID = -1.6 A -24.76 V 0.84 V -24.73 V 0.80 V 0.03 V -20 V 1.90 -0.96 V 0.02V -0.96 V 0.02 V 0.00V -37.7 nA 29.7 nA -20.5 nA 11.0 nA 17.2 nA -1 A 10.80 170.1 m 1.4 m 170.7 m 1.6 m 0.6 m 200 m 6.90 VGS(th) IDSS RDS(ON) -0.7 V 3.84 6. IRLML2402 (Sample Size of 35) Symbol Applied Condition Pre Data Mean 1000 hrs Mean Mean Shift Specification Min. Max. CPK IGSS+ VGS = 8V 4.9 nA 5.0 nA 4.7 nA 4.4 nA -0.2 nA 100 nA 6.34 IGSS- VGS = - 8V -6.0 nA 9.4 nA -5.0 nA 3.7 nA 1.0 nA -100 nA 3.34 BVDSS ID =250 A VGS = 0 V VDS =VGS ID = 250 A VDS = 16 V VGS = 0 V VGS = 4.5 V ID = .93 A 27.16 V 0.13 V 27.22 V 0.14 V 0.06 V 20 V 17.89 1.24 V 0.04V 1.24 V 0.04 V 0.00V 1.4 V 1.49 38.4 nA 23.2 nA 35.4 nA 18.9 nA -3.0 nA 1 A 13.79 188.0 m 4.2 m 190.8 m 4.6 m 2.8 m 250 m 4.96 VGS(th) IDSS RDS(ON) 0.7 V Note: 1. IGSS+: Gate to Source Forward Leakage Current 2. IGSS-: Gate to Source Reverse Leakage Current 3. BVDSS : Drain to Source Breakdown Voltage 4. VGS(th): Gate to Source Threshold Voltage 5. IDSS : Drain to Source Leakage Current 6. RDS(ON): Drain to Source On Resistance INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 38 PRE/POST ELECTRICAL DATA High Temperature Gate Bias (HTGB) 1. IRF7403 (Sample size of 30) Symbol Applied Condition Pre Data Mean 1000 hrs Mean Mean Shift Specification Min. Max. CPK IGSS+ VGS = 20V 27.5 nA 4.44 nA 81.5 nA 10.7 nA 54.0 nA 100 nA 5.45 IGSS- VGS = - 20V -0.99 nA 0.79 nA -1.76 nA 1.42 nA -0.77 nA -100 nA 41.69 BVDSS ID = 250 A VGS = 0 V VDS = 10 V ID = 250 A VDS = 24 V VGS = 0 V VGS = 10 V ID = 4.0 A 37.01 V 0.48 V 37.17 V 0.47 V 0.16 V 30 V 4.85 2.50 V 0.04 V 2.49 V 0.04 V -0.007 V 5.4 nA 15.1 nA 10.0 nA 21.2 nA 4.6 nA 1 A 21.89 15.9 m 0.3 m 16.6 m 0.5 m 0.7 m 22 m 7.71 VGS(th) IDSS RDS(ON) 1.0 V 12.59 2. IRF7404 (Sample Size of 30) Symbol Applied Condition Pre Data Mean 1000 hrs Mean Mean Shift Specification Min. Max. CPK IGSS+ VGS = 8V 4.9 nA 6.2 nA 1.2 nA 0.8 nA -3.7 nA 100 nA 5.14 IGSS- VGS = - 8V -5.1 nA 6.3 nA -1.4 nA 1.2 nA 3.7 nA -100 nA 5.03 BVDSS ID =-250 A VGS = 0 V VDS =VGS ID =-250 A VDS = -16 V VGS = 0 V VGS = -4.5 V ID = -3.2 A -25.51 V 1.01 V -25.23 V 0.69 V 0.28 V -20 V 1.82 -0.85 V 0.03 V -0.85 V 0.03 V 0.00V -4.1 nA 6.8 nA -0.4 nA 1.0 nA 3.7 nA -1 A 48.84 29.5 m 0.5 m 30.2 m 0.7 m 0.7 m 40 m 7.11 VGS(th) IDSS RDS(ON) -0.7 V 1.70 INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 39 PRE/POST ELECTRICAL DATA High Temperature Gate Bias (HTGB) 3. IRF7504 (Sample Size of 30) Symbol Applied Condition Pre Data Mean 1000 hrs Mean Mean Shift Specification Min. Max. CPK IGSS+ VGS = 8V 10.8 nA 14.3 nA 3.9 nA 4.4 nA -6.9 nA 100 nA 2.07 IGSS- VGS = - 8V -13.0 nA 15.9 nA -3.6 nA 3.6 nA 9.4 nA -100 nA 1.82 BVDSS ID =-250 A VGS = 0 V VDS =VGS ID =-250 A VDS = -16 V VGS = 0 V VGS = -4.5 V ID = -1.2 A -25.14 V 0.47 V -25.12 V 0.44 V 0.02 V -20 V 3.65 -0.96 V 0.02 V -0.97 V 0.02 V -0.01V -30.4 nA 32.4 nA -14.0 nA 7.4 nA 16.4 nA -1 A 9.98 169.3 m 3.2 m 170.3 m 3.2 m 1.0 m 270 m 10.56 VGS(th) IDSS RDS(ON) -0.7 V 4.12 4. IRLMS6702 (Sample Size of 35) Symbol Applied Condition Pre Data Mean 1000 hrs Mean IGSS+ VGS = 8V 18.9 nA 16.6 nA 7.1 nA 6.0 nA IGSS- VGS = - 8V -16.9 nA 15.8 nA -7.7 nA BVDSS ID =-250 A VGS = 0 V VDS =VGS ID =-250A VDS = -16 V VGS = 0 V VGS = -4.5 V ID = -1.6 A -24.28 V 0.82 V -0.95 V VGS(th) IDSS RDS(ON) Mean Shift Specification Min. Max. CPK -11.8 nA 100 nA 1.63 6.6 nA 9.2 nA -100 nA 1.76 -24.29 V 0.81 V -0.01 V -20 V 1.75 0.02V -0.96 V 0.02 V -0.01V -42.0 nA 26.8 nA -19.0 nA 12.5 nA 23.0 nA -1 A 11.89 169.7 m 1.3 m 170.5 m 1.9 m 0.8 m 200 m 7.79 -0.7 V 5.45 INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 40 PRE/POST ELECTRICAL DATA High Temperature Gate Bias (HTGB) 5. IRLML2402 (Sample Size of 35) Symbol Applied Condition Pre Data Mean 1000 hrs Mean Mean Shift Specification Min. Max. CPK IGSS+ VGS = 8V 16.0 nA 15.8 nA 7.2 nA 5.1 nA -8.8 nA 100 nA 1.78 IGSS- VGS = - 8V -20.0 nA 21.5 nA -6.5 nA 6.7 nA 13.5 nA -100 nA 1.24 BVDSS ID =250 A VGS = 0 V VDS =VGS ID = 250 A VDS = 16 V VGS = 0 V VGS = 4.5 V ID = .93 A 27.11 V 0.14 V 27.14 V 0.14 V 0.03 V 20 V 16.94 1.24 V 0.04V 1.24 V 0.04 V 0.00V 1.4 V 1.42 45.1 nA 24.7 nA 21.2 nA 12.3 nA -23.9 nA 1 A 12.91 187.4 m 4.9 m 190.2 m 5.1 m 2.8 m 250 m 4.25 VGS(th) IDSS RDS(ON) 0.7 V Note: 1. IGSS+: Gate to Source Forward Leakage Current 2. IGSS-: Gate to Source Reverse Leakage Current 3. BVDSS : Drain to Source Breakdown Voltage 4. VGS(th): Gate to Source Threshold Voltage 5. IDSS : Drain to Source Leakage Current 6. RDS(ON): Drain to Source On Resistance INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 41 PRE/POST ELECTRICAL DATA Temperature Humidity Bias (THB) 1. IRF7403 (Sample size of 30) Symbol Applied Condition Pre Data Mean 1000 hrs Mean Mean Shift Specification Min. Max. CPK IGSS+ VGS = 20V 25.9 nA 3.9 nA 47.4 nA 9.0 nA 21.5 nA 100 nA 6.25 IGSS- VGS = - 20V -1.0 nA 0.6 nA -2.2 nA 1.6 nA -1.2 nA -100 nA 54.16 BVDSS ID = 250 A VGS = 0 V VDS = 10 V ID = 250 A VDS = 24 V VGS = 0 V VGS = 10 V ID = 4.0 A 37.06 V 0.51 V 37.25 V 0.48 V 0.19 V 30 V 4.59 2.51 V 0.04 V 2.49 V 0.04 V -0.02 V 7.2 nA 24.7 nA 14.9 nA 40.2 nA 7.7 nA 1 A 13.38 16.2 m 0.7 m 17.0 m 1.3 m 0.8 m 22 m 2.66 VGS(th) IDSS RDS(ON) 1.0 V 13.66 2. IRF7401 (Sample Size of 30) Symbol Applied Condition Pre Data Mean 1500 hrs Mean Mean Shift Specification Min. Max. CPK IGSS+ VGS = 8 V 3.9 nA 4.4 nA 1.6 nA 1.4 nA -2.3 nA 100 nA 7.15 IGSS- VGS = - 8V -3.9 nA 3.8 nA -1.5 nA 0.9 nA 2.4 nA -100 nA 8.49 BVDSS ID = 250 A VGS = 0 V VDS = VGS ID = 250 A VDS = 16 V VGS = 0 V VGS = 4.5 V ID = 4.1 A 25.90 V 0.41 V 26.12 V 0.39 V 0.22 V 20 V 4.81 1.14 V 0.03V 1.14 V 0.03V 0.00 V 60.8 nA 70.9 nA 61.6 nA 87.3 nA 0.8 nA 1 A 4.42 13.8 m 0.5 m 14.0 m 0.8 m 0.2 m 22 m 5.30 VGS(th) IDSS RDS(ON) 0.7 V 5.19 INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 42 PRE/POST ELECTRICAL DATA Temperature Humidity Bias (THB) 3. IRF7404 (Sample Size of 30) Symbol Applied Condition Pre Data Mean 1000 hrs Mean Mean Shift Specification Min. Max. CPK IGSS+ VGS = 8V 3.2 nA 3.8 nA 1.2 nA 0.8 nA -2.0 nA 100 nA 8.45 IGSS- VGS = - 8V -3.7 nA 3.8 nA -1.6 nA 1.7 nA 2.1 nA -100 nA 8.51 BVDSS ID =-250 A VGS = 0 V VDS =VGS ID =-250 A VDS = -16 V VGS = 0 V VGS = -4.5 V ID = -3.2 A -25.33 V 0.96 V -25.29 V 0.94V 0.21 V -20 V 1.85 -0.84 V 0.03 V -0.84 V 0.03 V 0.00V -4.2 nA 5.8 nA -0.6 nA 1.1 nA 4.2 nA -1 A 57.14 29.4 m 0.4 m 29.5 m 0.5 m 0.1 m 40 m 8.15 Mean Shift Specification Min. Max. CPK VGS(th) IDSS RDS(ON) -0.7 V 1.78 4. IRF7504 (Sample Size of 30) Symbol Applied Condition Pre Data Mean 1000 hrs Mean IGSS+ VGS = 8V 20.0 nA 18.2 nA 2.9 nA 4.0 nA -17.1 nA 100 nA 1.47 IGSS- VGS = - 8V -19.8 nA 16.8 nA -3.6 nA 3.6 nA 16.2 nA -100 nA 1.60 BVDSS ID =-250 A VGS = 0 V VDS =VGS ID =-250 A VDS = -16 V VGS = 0 V VGS = -4.5 V ID = -1.2 A -24.52 V 0.89 V -24.51 V 0.89 V 0.01 V -20 V 1.69 -0.95 V 0.04 V -0.95 V 0.04 V 0.00V -47.0 nA 26.4 nA -240.1 nA 1.7 A -193.1 nA -1 A 12.04 171.2 m 3.9 m 172.1 m 3.6 m 0.9 m 270 m 8.42 VGS(th) IDSS RDS(ON) -0.7 V 1.98 INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 43 PRE/POST ELECTRICAL DATA Temperature Humidity Bias (THB) 5. IRLMS6702 (Sample Size of 35) Symbol Applied Condition Pre Data Mean 1000 hrs Mean Mean Shift Specification Min. Max. CPK IGSS+ VGS = 8V 10.7 nA 13.9 nA 7.1 nA 6.0 nA -3.6 nA 100 nA 2.13 IGSS- VGS = - 8V -16.1 nA 17.8 nA -7.7 nA 6.6 nA 8.4 nA -100 nA 1.57 BVDSS ID =-250 A VGS = 0 V VDS =VGS ID =-250A VDS = -16 V VGS = 0 V VGS = -4.5 V ID = -1.6 A -24.52 V 0.84 V -24.29 V 0.81 V 0.24 V -20 V 1.80 -0.95 V 0.02V -0.96 V 0.02 V -0.01V -27.3 nA 17.2 nA -19.0 nA 12.5 nA 8.3 nA -1 A 18.83 169.6 m 1.4 m 170.5 m 1.9 m 0.9 m 200 m 7.12 VGS(th) IDSS RDS(ON) -0.7 V 4.87 6. IRLML2402 (Sample Size of 35) Symbol Applied Condition Pre Data Mean 1000 hrs Mean Mean Shift Specification Min. Max. CPK IGSS+ VGS = 8V 16.5 nA 19.3 nA 8.8 nA 6.8 nA -7.7 nA 100 nA 1.44 IGSS- VGS = - 8V -19.8 nA 19.9 nA -7.4 nA 4.9 nA 12.4 nA -100 nA 1.34 BVDSS ID =250 A VGS = 0 V VDS =VGS ID = 250 A VDS = 16 V VGS = 0 V VGS = 4.5 V ID = .93 A 27.20 V 0.11 V 27.37 V 0.14 V 0.17 V 20 V 21.59 1.25 V 0.03V 1.25 V 0.03 V 0.00V 1.4 V 1.90 51.5 nA 26.5 nA 36.1 nA 24.8 nA -15.4 nA 1 A 11.93 189.3 m 4.1 m 191.8 m 4.1 m 2.5 m 250 m 4.98 VGS(th) IDSS RDS(ON) 0.7 V Note: 1. IGSS+: Gate to Source Forward Leakage Current 2. IGSS-: Gate to Source Reverse Leakage Current 3. BVDSS : Drain to Source Breakdown Voltage 4. VGS(th): Gate to Source Threshold Voltage 5. IDSS : Drain to Source Leakage Current 6. RDS(ON): Drain to Source On Resistance INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 44 PRE/POST ELECTRICAL DATA Temperature Cycling (TC) 1. IRF7403 (Sample size of 30) Symbol Applied Condition Pre Data Mean 1000 cycles Mean Mean Shift Specification Min. Max. CPK IGSS+ VGS = 20V 26.9 nA 5.35 nA 79.3 nA 12.9 nA 52.4 nA 100 nA 4.56 IGSS- VGS = - 20V -0.9 nA 0.8 nA -1.4 nA 1.5 nA -0.5 nA -100 nA 40.60 BVDSS ID = 250 A VGS = 0 V VDS = 10 V ID = 250 A VDS = 24 V VGS = 0 V VGS = 10 V ID = 4.0 A 37.27 V 0.46 V 37.36 V 0.46 V 0.09 V 30 V 5.23 2.48 V 0.05 V 2.47 V 0.05 V -0.01 V 37.5 nA 145.0 nA 44.2 nA 151.8 nA 6.7 nA 1 A 2.21 16.1 m 0.4 m 16.9 m 0.9 m 0.8 m 22 m 4.47 VGS(th) IDSS RDS(ON) 1.0 V 9.86 2. IRF7401 (Sample Size of 30) Symbol Applied Condition Pre Data Mean 1000 cycles Mean Mean Shift Specification Min. Max. CPK IGSS+ VGS = 8 V 6.3 nA 4.7 nA 1.0 nA 0.9 nA -5.3 nA 100 nA 6.64 IGSS- VGS = - 8V -5.5 nA 3.8 nA -0.8 nA 0.8 nA 4.7 nA -100 nA 8.22 BVDSS ID = 250 A VGS = 0 V VDS = VGS ID = 250 A VDS = 16 V VGS = 0 V VGS = 4.5 V ID = 4.1 A 25.99 V 0.61 V 25.98 V 0.61 V -0.01 V 20 V 3.25 1.13V 0.03V 1.13 V 0.03 V 0.00 V 38.9 nA 32.6 nA 46.7 nA 25.5 nA 7.8 nA 1 A 9.83 14.1 m 0.6 m 15.6 m 1.1 m 1.5 m 22 m 4.44 VGS(th) IDSS RDS(ON) 0.7 V 4.58 INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 45 PRE/POST ELECTRICAL DATA Temperature Cycling (TC) 3. IRF7404 (Sample Size of 30) Symbol Applied Condition Pre Data Mean 1000 cycles Mean Mean Shift Specification Min. Max. CPK IGSS+ VGS = 8V 3.0 nA 3.5 nA 1.1 nA 0.9 nA -2.4 nA 100 nA 9.29 IGSS- VGS = - 8V -3.6 nA 3.5 nA -1.4 nA 1.5 nA 2.2 nA -100 nA 9.12 BVDSS ID =-250 A VGS = 0 V VDS =VGS ID =-250 A VDS = -16 V VGS = 0 V VGS = -4.5 V ID = -3.2 A -24.64 V 1.25 V -24.59 V 1.18 V 0.05 V -20 V 1.23 -0.83 V 0.03 V -0.84 V 0.03 V -0.01V -4.3 nA 6.4 nA -0.9 nA 2.2 nA 3.5 nA -1 A 51.67 29.2 m 0.5 m 31.0 m 1.2 m 1.8 m 40 m 7.84 Mean Shift Specification Min. Max. CPK VGS(th) IDSS RDS(ON) -0.7 V 1.79 4. IRF7504 (Sample Size of 30) Symbol Applied Condition Pre Data Mean 1000 cycles Mean IGSS+ VGS = 8V 18.9 nA 17.6 nA 3.5 nA 4.0 nA -15.4 nA 100 nA 1.54 IGSS- VGS = - 8V -17.8 nA 16.6 nA -4.1 nA 3.8 nA 13.4 nA -100 nA 1.65 BVDSS ID =-250 A VGS = 0 V VDS =VGS ID =-250 A VDS = -16 V VGS = 0 V VGS = -4.5 V ID = -1.2 A -24.36 V 0.81 V -24.34 V 0.81 V 0.02 V -20 V 1.81 -0.94 V 0.04 V -0.94 V 0.04 V 0.00V -40.8 nA 27.7 nA -14.9 nA 6.0 nA -25.9 nA -1 A 11.53 170.4 m 3.5 m 172.6 m 3.5 m 2.2 m 270 m 9.59 VGS(th) IDSS RDS(ON) -0.7 V 2.09 INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 46 PRE/POST ELECTRICAL DATA Temperature Cycling (TC) 5. IRLMS6702 (Sample Size of 35) Symbol Applied Condition Pre Data Mean 1000 cycles Mean IGSS+ VGS = 8V 19.9 nA 18.4 nA 5.1 nA IGSS- VGS = - 8V -20.5 nA 16.6 nA BVDSS ID =-250 A VGS = 0 V VDS =VGS ID =-250A VDS = -16 V VGS = 0 V VGS = -4.5 V ID = -1.6 A -24.65 V 0.78 V -0.96 V 0.02V -37.5 nA 169.2 m VGS(th) IDSS RDS(ON) Mean Shift Specification Min. Max. CPK 4.3 nA -14.8 nA 100 nA 1.45 -4.6 nA 3.8 nA -15.9 nA -100 nA 1.60 -24.65 V 0.77 V 0.00 V -20 V 2.00 -0.96 V 0.02 V 0.00V 25.4 nA -17.5 nA 8.2 nA -20.0 nA -1 A 12.62 1.1 m 169.4 m 1.1 m 0.2 m 200 m 9.58 -0.7 V 4.86 6. IRLML2402 (Sample Size of 35) Symbol Applied Condition Pre Data Mean 1000 hrs Mean IGSS+ VGS = 8V 28.8 nA 19.8 nA 4.3 nA 4.5 nA IGSS- VGS = - 8V -26.3 nA 18.0 nA -4.4 nA BVDSS ID =250 A VGS = 0 V VDS =VGS ID = 250 A VDS = 16 V VGS = 0 V VGS = 4.5 V ID = .93 A 27.10 V 0.12 V 1.24 V VGS(th) IDSS RDS(ON) Mean Shift Specification Min. Max. CPK -24.5 nA 100 nA 1.20 4.6 nA -21.9 nA -100 nA 1.36 27.14 V 0.13 V 0.04 V 20 V 19.75 0.03V 1.23 V 0.03 V -0.01V 1.4 V 2.23 50.7 nA 34.5 nA 47.7 nA 28.2 nA -3.0 nA 1 A 9.17 186.9 m 3.7 m 195.7 m 7.1 m 7.8 m 250 m 5.64 0.7 V Note: 1. IGSS+: Gate to Source Forward Leakage Current 2. IGSS-: Gate to Source Reverse Leakage Current 3. BVDSS : Drain to Source Breakdown Voltage 4. VGS(th): Gate to Source Threshold Voltage 5. IDSS : Drain to Source Leakage Current 6. RDS(ON): Drain to Source On Resistance INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 47 SMT Package Qualification Data INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 48 Package Test Result 1) Micro8 Part Number IRF7604 IRF7604 IRF7604 Lot Number 124510 124511 124560A THB Test 85 C/85% RH & -20V VDSS Samples Failures Duration 66 0 500 hrs 66 0 500 hrs 66 0 500 hrs Date Code 9511 9512 9515 Temp Cycling Test -55 C to +150 C Samples Failures 66 0 66 0 66 0 Duration 2000 cycs 2000 cycs 2000 cycs 2) SO-8 Part Number IRF7413 IRF7416 IRF7103 IRF7103 IRF7422D2 IRF7422D2 IRF7422D2 Part Number IRF7103 IRF7422D2 IRF7422D2 IRF7422D2 Lot Number Group B 702166 702009 704618/7E096 705171/7E109 704835/7F145 Lot Number 702166 704618/7E096 705171/7E109 704835/7F145 Date Code 9524 9529 9646 9645 752 749 749 Date Code 9646 752 749 749 Autoclave Test 121 C/15 PSIG Samples Failures 30 0 30 0 33 0 39 0 39 0 39 0 39 0 Duration 192 hrs 142 hrs 96 hrs 96 hrs 96 hrs 96 hrs 96 hrs Temp Cycling Test -55 C to +150 C Samples Failures 30 0 30 0 60 0 39 39 39 0 0 0 Duration 1000 cycs 1000 cycs 885 cycs 1000 cycs 1000 cycs 1000 cys THB Test 85 C/85% RH & rated VDSS Samples Failures Duration 30 0 1000 hrs 39 0 1000 hrs 39 0 1000 hrs 39 0 1000 hrs Note: a). See page 6 for preconditioning procedure. INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 49 PRE/POST ELECTRICAL DATA Temperature Humidity Bias (THB) 1) Micro8 - IRF7504 Symbol Applied Condition Pre Data Mean 500 hours Mean Mean Shift Specification Min. Max. CPK IGSS+ VGS = 8V 0.63 nA 0.74 nA 6.05 nA 0.61 nA 5.42 nA 100 nA 45.01 IGSS- VGS = - 8V -0.75 nA 1.35 nA -1.75 nA 4.63 nA -1.00 nA -100 nA 24.49 BVDSS ID = 250 A VGS = 0 V VDS = VGS ID = 250 A VDS = -16 V VGS = 0 V VGS = -4.5 V ID = -2.4 A -28.53 V 0.50V -28.60 V 0.47V -0.07 V -20 V 5.74 -1.064 V 0.058 V -1.060 V 0.057 V 0.001 V -11.7 nA 1.84 nA -22.3 nA 14.0 nA -10.6 nA -1 A 178.65 73.05 m 2.05 m 74.37 m 2.30 m 1.33 m 90 m 2.76 VGS(th) IDSS RDS(ON) -0.7 V 2.10 2) SO-8 - IRF7103 (Sample size of 30) Symbol Applied Condition Pre Data Mean 1000 hours Mean IGSS+ VGS = 20V 19.0 nA 15.6 nA 5.6 nA 4.5 nA IGSS- VGS = - 20V -18.0 nA 18.0 nA -4.6 nA BVDSS ID = 250 A VGS = 0 V VDS = VGS ID = 250 A VDS = 44 V VGS = 0 V VGS = 10 V ID = 2.0 A 62.60 V 0.17 V 1.72 V VGS(th) IDSS RDS(ON) Mean Shift Specification Min. Max. CPK -13.4 nA 100 nA 1.73 5.4 nA -13.4 nA -100 nA 1.52 62.46 V 0.18 V -0.14 V 55 V 14.90 0.03 V 1.73 V 0.03 V 0.01 V 56.0 nA 27.1 nA 57.4 nA 19.4 nA 1.4 nA 2 A 23.91 117.0 m 1.7 m 117.5 m 1.8 m 0.5 m 130 m 2.55 1.0 V 8.00 Note: 1. IGSS+: Gate to Source Forward Leakage Current 2. IGSS-: Gate to Source Reverse Leakage Current 3. BVDSS : Drain to Source Breakdown Voltage 4. VGS(th): Gate to Source Threshold Voltage 5. IDSS : Drain to Source Leakage Current 6. RDS(ON): Drain to Source On Resistance INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 50 PRE/POST ELECTRICAL DATA Temperature Humidity Bias (THB) 3) SO-8 - IRF7422D2 (Sample size of 39) Symbol Applied Condition Pre Data Mean 1000 hrs Mean Mean Shift Specification Min. Max. CPK IGSS+ VGS = 8V 3.8 nA 3.9 nA 0.0 nA 0.0 nA -3.8 nA 100 nA 8.29 IGSS- VGS = - 8V -3.4 nA 3.6 nA -0.2 nA 0.2 nA 3.2 nA -100 nA 8.85 BVDSS ID = - 250 A VGS = 0 V VDS = VGS ID = -250 A VDS = -16 V VGS = 0 V VGS = -4.5 V ID = -2.3 A -25.58 V 0.48 V -25.69 V 0.61 V -0.11 V -20 V 3.86 -0.851 V 0.028 V -0.933 V 0.298 V -0.082V -0.7 V 1.77 -9.1 nA 6.0 nA -8.7 nA 0.7 nA 0.4 nA -1 A 54.88 66.70 m 0.48m 69.54 m 8.10 m 2.84m 90 m 16.15 VGS(th) IDSS RDS(ON) VF IF = 3.0 A 0.450 V 0.002 V 0.451 V 0.002 V 0.001 V 0.57 V 19.11 IR VR = 20.0 V 13.2 A 1.9 A 11.9 A 1.5 A -1.3 A 500 A 85.59 4) SO-8 - IRF7422D2 (Sample size of 39) Symbol Applied Condition Pre Data Mean 1000 hrs Mean Mean Shift IGSS+ VGS = 8V 3.4 nA 4.0 nA 0.0 nA 0.1 nA IGSS- VGS = - 8V -3.9 nA 4.1 nA -0.2 nA BVDSS ID = - 250 A VGS = 0 V VDS = VGS ID = -250 A VDS = -16 V VGS = 0 V VGS = -4.5 V ID = -2.3 A -26.09 V 0.19 V -0.919 V VGS(th) IDSS RDS(ON) Specification Min. Max. CPK -3.4 nA 100 nA 8.03 0.3 nA 3.7 nA -100 nA 7.84 -26.17 V 0.57 V -0.08 V -20 V 10.88 0.017 V -0.921 V 0.018 V -0.002V -0.7 V 4.22 -10.9 nA 6.8 nA -9.7 nA 6.7 nA 1.2 nA -1 A 48.64 69.26 m 0.59m 70.02 m 2.55 m 0.76m 90 m 11.67 VF IF = 3.0 A 0.447 V 0.001 V 0.448 V 0.002 V 0.001 V 0.57 V 28.45 IR VR = 20.0 V 12.2 A 1.0 A 13.9 A 12.9 A 1.7 A 500 A 163.30 INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 51 PRE/POST ELECTRICAL DATA Temperature Cycling (TC) 1) Micro8 - IRF7504 Symbol Applied Condition Pre Data Mean 2000 cycles Mean IGSS+ VGS = 8V 0.65 nA 0.28 nA 0.66 nA 0.38 nA -0.01 nA 100 nA 117.76 IGSS- VGS = - 8V -0.66 nA 0.14 nA -0.70 nA 0.21 nA -0.40 nA -100 nA 236.23 BVDSS ID = 250 A VGS = 0 V VDS = VGS ID = 250 A VDS = -16 V VGS = 0 V VGS = -4.5 V ID = -2.4 A -28.53V 0.47 V -28.51 V 0.36 V 0.02 V -20 V 6.07 -1.065 V 0.058 V -1.065 V 0.056 V 0.000 V -12.9 nA 7.28 nA -11.7 nA 2.85 nA 1.20 nA -1 A 45.22 73.12 m 1.92 m 74.52 m 2.32 m 1.39 m 90 m 2.93 VGS(th) IDSS RDS(ON) Mean Shift Specification Min. Max. -0.7 V CPK 2.09 2) SO-8 - IRF7103 (Sample size of 60) Symbol Applied Condition Pre Data Mean 885 cycles Mean IGSS+ VGS = 20V 22.4 nA 15.5 nA 10.2 nA 7.5 nA IGSS- VGS = - 20V -20.1 nA 18.2 nA -7.7 nA BVDSS ID = 250 A VGS = 0 V VDS = VGS ID = 250 A VDS = 44 V VGS = 0 V VGS = 10 V ID = 2.0 A 62.59 V 0.18 V 1.72 V VGS(th) IDSS RDS(ON) Mean Shift Specification Min. Max. CPK -12.2 nA 100 nA 1.67 6.2 nA -12.4 nA -100 nA 1.46 62.44 V 0.18 V -0.15 V 55 V 14.06 0.03 V 1.72 V 0.03 V 0.00 V 58.6 nA 30.0 nA 51.8 nA 20.4 nA -6.8 nA 2 A 21.57 117.2 m 1.8 m 115.9 m 1.7 m -1.3 m 130 m 2.37 1.0 V 8.00 INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 52 PRE/POST ELECTRICAL DATA Temperature Cycling (TC) 3) SO-8 - IRF7413 (Sample size of 30) Symbol Applied Condition Pre Data Mean 1000 cycles Mean Mean Shift Specification Min. Max. CPK IGSS+ VGS = 20V 1.1 nA 1.0 nA 1.1 nA 0.7 nA 0.0 nA 100 nA 32.97 IGSS- VGS = - 20V -0.7 nA 0.4 nA -0.6 nA 0.3 nA -0.1 nA -100 nA 82.75 BVDSS ID = 250 A VGS = 0 V VDS = VGS ID = 250 A VDS = 24 V VGS = 0 V VGS = 10 V ID = 7.3 A 40.75 V 0.73 V 40.76 V 0.70 V 0.01V 30 V 4.91 1.96 V 0.04 V 1.96 V 0.04 V 0.00 V 17.1 nA 11.1 nA 65.0 nA 251.0 nA 47.9 nA 1 A 29.52 10.4 m 0.2 m 10.6 m 0.3 m 0.2 m 11 m 1.00 VGS(th) IDSS RDS(ON) 1.0 V 8.00 4) SO-8 - IRF7416 (Sample size of 30) Symbol Applied Condition Pre Data Mean Post Data Mean Mean Shift Specification Min. Max. CPK IGSS+ VGS = 20V 2.4 nA 11.0 nA 1.1 nA 0.9 nA -1.3 nA 100 nA 2.96 IGSS- VGS = - 20V -3.5 nA 10.5 nA -1.6 nA 1.1 nA -1.9 nA -100 nA 3.06 BVDSS ID = 250 A VGS = 0 V VDS = VGS ID = 250 A VDS = -24 V VGS = 0 V VGS = -10 V ID = -5.6 A -44.47 V 0.10 V -44.46 V 0.10 V -0.01 V -30 V 48.23 -1.82 V 0.01 V -1.82 V 0.01 V 0.00 V -26.0 nA 40.9 nA -10.9 nA 2.84 nA -15.1 nA -1 A 24.1 m 0.1 m 24.4 m 0.3 m 0.3 m 20 m VGS(th) IDSS RDS(ON) -1.0 V 27.33 Note: 1. IGSS+: Gate to Source Forward Leakage Current 2. IGSS-: Gate to Source Reverse Leakage Current 3. BVDSS : Drain to Source Breakdown Voltage 4. VGS(th): Gate to Source Threshold Voltage 5. IDSS : Drain to Source Leakage Current 6. RDS(ON): Drain to Source On Resistance INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 7.93 Small-Outline SMD Reliability Report Page 53 PRE/POST ELECTRICAL DATA Temperature Cycling (TC) 5) SO-8 - IRF7422D2 (Sample size of 39) Symbol Applied Condition Pre Data Mean 1000 hrs Mean IGSS+ VGS = 8V 4.2 nA 2.0 nA IGSS- VGS = - 8V BVDSS ID = - 250 A VGS = 0 V VDS = VGS ID = -250 A VDS = -16 V VGS = 0 V VGS = -4.5 V ID = -2.3 A VGS(th) IDSS RDS(ON) 4.0 nA 3.3 nA Mean Shift Specification Min. Max. CPK -2.2 nA 100 nA 7.93 -100 nA 7.83 -3.8 nA 4.1 nA -2.4 nA 3.6 nA 1.4 nA -25.56 V 0.66 V -25.57 V 0.67 V -0.01 V -20 V 2.79 -0.848 V 0.032 V -0.847 V 0.032 V 0.001 V -0.7 V 1.55 -9.0 nA 0.7 nA -15.7 nA 50.5 nA -6.7 nA -1 A 477.99 67.75m 0.74m 69.62 m 1.56 m 1.87m 90 m 10.03 VF IF = 3.0 A 0.448 V 0.002 V 0.450 V 0.003 V 0.002 V 0.57 V 19.81 IR VR = 20.0 V 16.0 A 2.1 A 16.0 A 1.7 A 0.0 A 500 A 78.25 6) SO-8 - IRF7422D2 (Sample size of 39) Symbol Applied Condition Pre Data Mean 1000 hrs Mean Mean Shift IGSS+ VGS = 8V 4.1 nA 4.3 nA 2.5 nA 3.6 nA IGSS- VGS = - 8V -4.8 nA 4.8 nA -2.3 nA BVDSS ID = - 250 A VGS = 0 V VDS = VGS ID = -250 A VDS = -16 V VGS = 0 V VGS = -4.5 V ID = -2.3 A -26.12 V 0.08 V -0.923 V VGS(th) IDSS RDS(ON) Specification Min. Max. CPK -1.6 nA 100 nA 7.41 3.4 nA 2.5 nA -100 nA 6.64 -26.14 V 0.08 V -0.02 V -20 V 26.49 0.014 V -0.920 V 0.014 V 0.003 V -0.7 V 5.43 -9.2 nA 6.7 nA -8.0 nA 4.6 nA 1.2 nA -1 A 49.35 69.39m 0.53 m 73.01m 2.24 m 3.62m 90 m 12.98 VF IF = 3.0 A 0.446 V 0.002 V 0.449 V 0.002 V 0.003 V 0.57 V 19.53 IR VR = 20.0 V 13.6 A 2.0 A 16.3 A 1.3 A 2.7 A 500 A 80.48 INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 54 PRE/POST ELECTRICAL DATA Autoclave Testing 1) SO-8 - IRF7103 (Sample size of 33) Symbol Applied Condition Pre Data Mean 96 hours Mean Mean Shift Specification Min. Max. CPK IGSS+ VGS = 20V 18.4 nA 7.4 nA 12.6 nA 9.3 nA -5.8 nA 100 nA 3.68 IGSS- VGS = - 20V -5.0 nA 5.2 nA -6.9 nA 9.6 nA 1.9 nA -100 nA 6.09 BVDSS ID = 250 A VGS = 0 V VDS = VGS ID = 250 A VDS = 44 V VGS = 0 V VGS = 10 V ID = 2.0 A 62.96 V 0.23 V 62.89 V 0.23 V -0.07 V 55 V 11.54 1.65 V 0.03 V 1.66 V 0.02 V 0.01 V 53.7 nA 22.5 nA 61.8 nA 26.58 nA 8.1 nA 2 A 28.83 116.5 m 1.0 m 116.3 m 1.2 m -0.2 m 130 m 4.50 VGS(th) IDSS RDS(ON) 1.0 V 7.22 2) SO-8 - IRF7103 (Sample size of 39) Symbol Applied Condition Pre Data Mean 96 hours Mean Mean Shift Specification Min. Max. CPK IGSS+ VGS = 20V 18.4 nA 6.6 nA 16.3 nA 18.9 nA -2.1 nA 100 nA 4.12 IGSS- VGS = - 20V -4.8 nA 5.2 nA -10.0 nA 19.0 nA -5.2 nA -100 nA 6.10 BVDSS ID = 250 A VGS = 0 V VDS = VGS ID = 250 A VDS = 44 V VGS = 0 V VGS = 10 V ID = 2.0 A 63.74 V 0.51 V 63.70 V 0.51 V -0.04 V 55 V 5.71 1.60 V 0.03 V 1.60 V 0.03 V 0.00 V 58.2 nA 23.5 nA 59.3 nA 26.6 nA 0.9 nA 2 A 27.54 119.4 m 2.9 m 119.8 m 3.0 m 0.4 m 130 m 1.22 VGS(th) IDSS RDS(ON) 1.0 V 6.67 INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 Small-Outline SMD Reliability Report Page 55 PRE/POST ELECTRICAL DATA Autoclave Testing 3) SO-8 - IRF7413 (Sample size of 30) Symbol Applied Condition Pre Data Mean IGSS+ VGS = 20V 1.5 nA 1.3 nA 174.0 nA 520.0 nA IGSS- VGS = - 20V -0.6 nA 0.4 nA -258.0 nA BVDSS ID = 250 A VGS = 0 V VDS = VGS ID = 250 A VDS = 24 V VGS = 0 V VGS = 10 V ID = 7.3 A 40.71 V 1.4 V 1.94 V VGS(th) IDSS RDS(ON) 192 hours Mean Mean Shift Specification Min. Max. CPK 172.5 nA 100 nA 25.26 972.0 nA -257.4 nA -100 nA 82.83 40.70 V 1.3 V -0.01V 30 V 2.55 0.05 V 1.95 V 0.05 V 0.01 V 14.6 nA 5.2 nA 34.3 nA 24.7 nA 18.7 nA 1 A 63.17 10.5 m 0.4 m 10.7 m 0.7 m 0.2 m 11 m 1.25 1.0 V 6.27 4) SO-8 - IRF7416 (Sample size of 30) Symbol Applied Condition Pre Data Mean 142 hours Mean Mean Shift Specification Min. Max. IGSS+ VGS = 20V 0.5 nA 0.3 nA 1.9 A 2.6 A 1.9 A 100 nA 110.56 IGSS- VGS = - 20V -2.1 nA 1.4 nA -2.2 A -4.2 A 2.2 A -100 nA 23.31 BVDSS ID = 250 A VGS = 0 V VDS = VGS ID = 250 A VDS = -24 V VGS = 0 V VGS = -10 V ID = -5.6 A -43.79 V 2.49 V -43.76 V 2.48 V -0.03V -30 V 1.85 -1.82 V 0.01 V -1.82 V 0.01 V 0.00 V -18.4 nA 2.7 nA -121.0 nA 64.1 nA 102.6 nA -1 A 24.0 m 0.2 m 25.0 m 0.9 m 1.0 m 20 m VGS(th) IDSS RDS(ON) -1.0 V CPK 27.33 Note: 1. IGSS+: Gate to Source Forward Leakage Current 2. IGSS-: Gate to Source Reverse Leakage Current 3. BVDSS : Drain to Source Breakdown Voltage 4. VGS(th): Gate to Source Threshold Voltage 5. IDSS : Drain to Source Leakage Current 6. RDS(ON): Drain to Source On Resistance INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219 121.19 Small-Outline SMD Reliability Report Page 56 PRE/POST ELECTRICAL DATA Autoclave Testing 5) SO-8 - IRF7422D2 (Sample size of 39) Symbol Applied Condition Pre Data Mean 1000 hrs Mean Mean Shift Specification Min. Max. CPK IGSS+ VGS = 8V 3.9 nA 4.0 nA 5.6 nA 5.1 nA 1.5 nA 100 nA 8.02 IGSS- VGS = - 8V -3.9 nA 4.4 nA -6.0 nA 5.3 nA -2.1 nA -100 nA 7.36 BVDSS ID = - 250 A VGS = 0 V VDS = VGS ID = -250 A VDS = -16 V VGS = 0 V VGS = -4.5 V ID = -2.3 A -25.53 V 0.52 V -25.56 V 0.53 V -0.03 V -20 V 3.55 -0.837 V 0.014 V -0.832 V 0.015 V 0.005 V -0.7 V 3.23 -8.6 nA 6.1 nA -19.9 nA 20.9 nA -11.3nA -1 A 54.07 66.55 m 0.46 m 67.00 m 0.33 m 0.45m 90 m 20.02 VGS(th) IDSS RDS(ON) VF IF = 3.0 A 0.449 V 0.002 V 0.445 V 0.002 V -0.004V 0.57 V 20.02 IR VR = 20.0 V 14.2 A 2.3 A 17.9 A 2.9 A 3.7 A 500 A 70.60 6) SO-8 - IRF7422D2 (Sample size of 39) Symbol Applied Condition Pre Data Mean 1000 hrs Mean Mean Shift Specification Min. Max. CPK IGSS+ VGS = 8V 4.0 nA 3.8 nA 11.7 nA 30.3 nA 7.7 nA 100 nA 8.31 IGSS- VGS = - 8V -3.6 nA 3.7 nA -12.8 nA 31.0 nA -9.2 nA -100 nA 8.59 BVDSS ID = - 250 A VGS = 0 V VDS = VGS ID = -250 A VDS = -16 V VGS = 0 V VGS = -4.5 V ID = -2.3 A -26.09 V 0.34 V -26.11 V 0.31 V -0.02 V -20 V 5.89 -0.929 V 0.026 V -0.926 V 0.026 V 0.003 V -0.7 V 35.72 -9.3 nA 9.2 nA -33.2 nA 41.6 nA -23.9nA -1 A 35.72 69.38 m 0.63m 69.79 m 0.62 m 0.41m 90 m 10.90 VGS(th) IDSS RDS(ON) VF IF = 3.0 A 0.444 V 0.002 V 0.441 V 0.002 V -0.003V 0.57 V 19.57 IR VR = 20.0 V 15.6 A 2.2 A 19.6 A 3.3 A 4.0 A 500 A 73.65 INTERNATIONAL RECTIFIER WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219