Small-Outline SMD Reliability Report - International Rectifier

Small-Outline SMD Reliability Report Page 1

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

Table of Contents

Section Page

I. Executive Summary 2

II. Introduction 3-6

III. Procedure 7-8

IV. Reliability Tests - Table I 9

V. Electrical Tests - Table II 10-15

VI. Test Purposes & Common Failure Mechanisms 16-19

VII. Reliability Data 20-29

VIII. Failure Rate Estimate 30-32

IX. Variable Data

HTRB 33-36

HTGB 37-39

THB 40-42

TC 43-45

X. SMT Package Qualification Data 46-55

Small-Outline SMD Reliability Report Page 2

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

Executive Summary

This report summarizes the qualification data on International Rectifier’s generation-V

HEXFET and FETKY devices in small-outline surface mount SO-8, Micro8, Micro6, and

Micro3 packages. The die, packaging materials and assembly processes meet the

reliability requirements established by the Project Team at International Rectifier for this

product class.

All tests are either performed or overseen by Reliability Engineering. The original data

has been stored by Reliability and is available for review upon request. For further

information or any questions regarding this report please contact:

International Rectifier

233 Kansas Street

El Segundo, CA 90245

Attn: Reliability Engineering

Phone: (310) 322-3331

Fax: (310) 322-3332

Small-Outline SMD Reliability Report Page 3

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

Micro8

The Micro8 is a commercial surface mount plastic package containing up to two die (2

HEXFET or 1 HEXFET + 1 Schottky) per package. Typically Micro8 packages are used

in ultra low on-resistance, space limited applications where multiple devices are required;

such as cellular phones, disk drives, laptop computers and other portable electronics.

Based on the test results of the eight devices indicated below and other devices in the

same silicon family, Micro8 devices are considered qualified.

Devices tested: IRF7504, VDSS(max) = - 20 V, IRF7604, VDSS(max) = - 20 V

IRF7603, VDSS(max) = 30 V, IRF7506, VDSS(max) = - 30 V

IRF7606, VDSS(max) = - 30 V, IRF7601, VDSS(max) = 20 V

IRF7521D1, VDSS(max) = 20 V, IRF7523D1, VDSS(max) = 30 V

Criteria:

Technology: 3.3 V and 5 V Logic Level Gen-V HEXFETs

Very Low Forward Drop Schottky Rectifier

Polarity: N-Channel & P-Channel

Die Size: 1) Less than or equal to 70 x 85 x 10 mils for HEXFET

2) 36 x 36 x 10 mils for Schottky

Voltage: Less than or equal to 30 volts

Top Metalization: Al

Back Metalization: Cr/Ni-V/Ag

Gate Material: Polysilicon

Wafer Fab Location: Fab 2, HEXFET America, Temecula, CA

Borgaro, Italy (IRCI) for Schottky

Assembly: 1) Carsem - Ipoh, Malaysia

2) Hana - Thailand

Leadframe: Ag spot plated Cu (Olin 194)

Die Bond Material: Ag filled epoxy

Die Bond Method: Automated die attach machine

Wire: 1.3 mil dia. Au

Wire Bonding Method: Thermosonic ball to die and stitch bond to lead frame

Mold Compound: High Performance Biphenyl Epoxy Resin

Small-Outline SMD Reliability Report Page 4

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

SO-8

The SO-8 is a commercial surface mount plastic package containing up to two die (2

HEXFET or 1 HEXFET + 1 Schottky) per package. Typically SO-8 packages are used in

low current, space limited applications where multiple devices are required; such as disk

drives, laptop computers and other portable electronics. Based on the test results of the

fourteen devices indicated below and other devices in the same silicon family, Advanced

SO-8 devices are considered qualified.

Devices tested: IRF7401, VDSS(max) = 20 V IRF7403, VDSS(max) = 30 V

IRF7421D1, VDSS(max) = 30V IRF7422D2, VDSS(max) = - 20V

IRF7404, VDSS(max) = - 20 V IRF7416, VDSS(max) = - 30 V

IRF7103, VDSS(max) = 55 V IRF7201, VDSS(max) = 30 V

IRF7413, VDSS(max) = 30 V IRF7304, VDSS(max) = - 20V

IRF7313, VDSS(max) = - 20V IRF7316, VDSS(max) = - 30 V

IRF7321D2, VDSS(max) = - 30 V IRF7389, VDSS(max) = ± 30 V

Criteria:

Technology: 3.3 V and 5 V Logic Level Gen-V HEXFETs

Very Low Forward Drop Schottky Rectifier

Polarity: N-Channel & P-Channel

Die Size: Less than or equal to 102 x 157 x 10 mils for HEXFET

D1 (36 x 36 and 43 x 43 mils) and D2 (60 x 60 and 66 x 66 mils) for

Schottky

Voltage: Less than or equal to 55 volts

Top Metalization: Al

Back Metalization: Cr/Ni-V/Ag

Gate Material: Polysilicon

Wafer Fab Location: Fab 2, HEXFET America, Temecula, CA for HEXFET

330 Kansas St., El Segundo, CA and Borgaro, Italy (IRCI)

for Schottky

Assembly: 1) Carsem - Ipoh, Malaysia

2) Amkor/Anam Pilipinas

Leadframe: 1) Ag spot plated Cu (Olin 194) for Assembly 1

2) Cu (olin 194) for Assembly 2

Die Bond Material: Ag filled epoxy

Die Bond Method: Automated die attach machine

Wire: 2 mil dia. Au

Wire Bonding Method: Thermosonic ball to die and stitch bond to lead frame

Mold Compound: 1) High Performance Biphenyl Epoxy Resin for autoclave-

capable performance

2) Novolac Epoxy for non-autoclave required application

Small-Outline SMD Reliability Report Page 5

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

Small-Outline SMD Reliability Report Page 6

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

Micro6

The Micro6 is a commercial surface mount plastic package, typically can be used in ultra

low on-resistance, space limited applications where multiple devices are required; such as

cellular phones, disk drives, laptop computers and other portable electronics. Based on

the test results of the four devices indicated below and other devices in the same silicon

family, Micro6 devices are considered qualified.

Devices tested: IRLMS1503, VDSS(max) = 30 V, IRLMS1902, VDSS(max) = 20 V

IRLMS5703, VDSS(max) = - 30 V IRLMS6702, VDSS(max) = - 20 V

Criteria:

Technology: 3.3 V and 5 V Logic Level Gen-V HEXFETs

Polarity: N-Channel & P-Channel

Die Size: Less than or equal to 35 x 70 x 10 mils

Voltage: Less than or equal to 30 volts

Top Metalization: Al

Back Metalization: Cr/Ni-V/Ag

Gate Material: Polysilicon

Wafer Fab Location: Fab 2, HEXFET America, Temecula, CA

Assembly: Carsem - Ipoh, Malaysia

Leadframe: Ag spot plated Cu (Olin 194)

Die Bond Material: Ag filled epoxy

Die Bond Method: Automated die attach machine

Wire: 1.3 mil dia. Au

Wire Bonding Method: Thermosonic ball to die and stitch bond to lead frame

Mold Compound: Novolac Epoxy Resin

Small-Outline SMD Reliability Report Page 7

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

Micro3

The Micro3 is a commercial surface mount plastic package, typically can be used in ultra

low on-resistance, space limited applications where multiple devices are required; such as

cellular phones, disk drives, laptop computers and other portable electronics. Based on

the test results of the device indicated below and other devices in the same silicon family,

Micro3 devices are considered qualified.

Devices tested: IRLML2402, VDSS(max) = 20 V IRLML6302, VDSS(max) = - 20 V

IRLML5103, VDSS(max) = - 30 V IRLML2803, VDSS(max) = 30 V

Criteria:

Technology: 3.3 V and 5V Logic Level Gen-V HEXFETs

Polarity: N-Channel & P-Channel

Die Size: Less than or equal to 28 x 38 x 10 mils

Voltage: Less than or equal to 30 volts

Top Metalization: Al

Back Metalization: Cr/Ni-V/Ag

Gate Material: Polysilicon

Wafer Fab Location: Fab 2, HEXFET America, Temecula, CA

Assembly: Carsem - Ipoh, Malaysia

Leadframe: Alloy 42

Die Bond Material: Au Eutectic

Die Bond Method: Automated die attach machine

Wire: 1.0 mil dia. Au

Wire Bonding Method: Thermosonic ball to die and stitch bond to lead frame

Mold Compound: High Performance Biphenyl Epoxy Resin

Small-Outline SMD Reliability Report Page 8

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

Surface Mount Technology

Qualification Procedure

The SMT board acts not only as a test vehicle for the surface mount devices, but

simulates the thermo-mechanical stresses and flux exposure devices are subjected to

during surface mounting procedures.

Electrical measurements are taken on devices which are then attached to the SMT board,

via furnace reflow. After the furnace reflow process the cards are ultrasonically cleaned

using Photoresist Stripper (ACT-I) to remove the residual flux. Electrical parameters are

re-measured and any rejects are analyzed to determine the failure mode. The devices are

split into groups by stress type and left on the test board throughout the remaining tests.

The device to board attach method and materials are:

Board Material: Fiberglass with 1 oz Cu, Plating - 50 µm Au over 200 µm Ni

Solder: 63 Sn/37 Pb

Flux: RMA

Furnace Temperature: 240 °C peak

Furnace Duration: Eight minutes

Cleaning: Photoresist Stripper ACT-I

The devices are initially measured (see Table II) then subjected to the reliability tests (see

Table I) DC electrical parameters are taken at initial, interim and final readpoints. The

electrical parameters taken are: BVDSS, IDSS, IGSS, VGS(th), and RDS(ON)

Small-Outline SMD Reliability Report Page 9

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

Surface Mount Technology

Package Qualification Procedure

Additional to the standard qualification procedure, SMT devices also undergo a package

qualification process. The package qualification testing consists of a moisture resistance

test (500 hours 85 °C/85% RH test or 96 hours autoclave testing), Temperature Cycling

test, C-Mode Scanning Acoustic Microscope (C-SAM) analysis, and Micro Cracks

Inspection through Optical Microscope and Cross Sectioning Technique.

Devices were subjected to a preconditioning sequence prior to the package qualification

testing. The preconditioning sequence:

Temperature Cycling

- 55 °C to + 150 °C

5 cycles

Unbiased 168 hours

85 °C / 85% RH

Lonco 3355-11

Fluxing

5 seconds 260 °C Solder Dipping or

SMT Board Mounting (IR Reflow @ 240 °C Peak)

Kester 450

Fluxing

5 seconds 260 °C Solder Dipping or

SMT Board Mounting (IR Reflow @ 240 °C Peak)

SMT Board Mounting

IR @ 240 °C Peak

Temperature Cycling

- 55 °C to + 150 °C

100 cycles

Small-Outline SMD Reliability Report Page 10

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

Reliability Tests

Table I

High Temp Reverse Bias - HTRB

Conditions: VDSS = 100% rated BVDSS, TJ = Max rating

Duration and interim test points: 48, 330, 660 & 1000 hours

Test Window: Within 24 hours

Sensitive Parameters: BVDSS, IDSS, VGS(th) & RDS(ON)

High Temp Gate Bias - HTGB

Conditions: VGSS = 80% Rated Max VGSS, TJ = Max rating

Duration and interim test points: 24, 168, 330, 500 & 1000 hours

Test Window: Within 24 hours

Sensitive Parameters: IGSS & VGS(th)

Temp Humidity Bias - THB

Conditions: VDSS = 100% rated BVDSS, TA = 85 °C, RH = 85%

Duration and interim test points: 48, 330, 660 & 1000 hours

Test Window: Between 2 and 8 hours

Sensitive Parameters: IGSS & IDSS

Temperature Cycling - TC

Conditions: Tmax = + 150 °C, Tmin = - 55 °C

Duration and interim test points: 50, 330, 660 & 1000 cycles

Sensitive Parameters: RDS (ON) & IDSS

Visual: No evidence of mechanical damage

Autoclave - PC

Conditions: TA = + 121 °C, P = 2 ATM, 14.7 PSIG

Duration and interim test points: 96 hrs

Test Window: Between 24 and 48 hours

Sensitive Parameters: RDS (ON), IGSS & IDSS

The devices were initially measured then submitted to the testing outlined above. At the

above outlined intervals the devices were removed from testing for electrical

measurements. The devices were then put back on testing for the duration of the

specified time. All the pre and post electrical data for those tests listed in the table IIIA is

stored and available upon request. Examples of variable data can be found in the back of

this report.

Small-Outline SMD Reliability Report Page 11

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

Initial and Interim Electrical Specifications

Table II-A part type IRF7401 (SO-8)

Symbol Definition Applied Conditions Limit Units

IGSS Gate to Source Forward Leakage Current VGS = 8 V 100 nA

IGSS Gate to Source Reverse Leakage Current VGS = -8 V -100 nA

IDSS Drain to Source Leakage Current VDS = 16 V, VGS= 0 V 1.0 µA

BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 20 V

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID =250 µA0.7 min V

RDS(ON)1 Drain to Source On Resistance VGS = 4.5 V, ID = 4.1 A 22 mΩ

RDS(ON)2 Drain to Source On Resistance VGS = 2.7 V, ID = 3.5 A 30 mΩ

Table II-B part type IRF7403 (SO-8)

Symbol Definition Applied Conditions Limit Units

IGSS Gate to Source Forward Leakage Current VGS = 20 V 100 nA

IGSS Gate to Source Reverse Leakage Current VGS = -20 V -100 nA

IDSS Drain to Source Leakage Current VDS = 24 V, VGS= 0 V 1.0 µA

BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 30 V

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID =250 µA1.0 min V

RDS(ON)1 Drain to Source On Resistance VGS = 10 V, ID = 4.0 A 22 mΩ

RDS(ON)2 Drain to Source On Resistance VGS = 4.5 V, ID = 3.4 A 35 mΩ

Table II-C part type IRF7421D1 (SO-8)

Symbol Definition Applied Conditions Limit Units

IGSS Gate to Source Forward Leakage Current VGS = 20 V 100 nA

IGSS Gate to Source Reverse Leakage Current VGS = -20 V -100 nA

IDSS Drain to Source Leakage Current VDS = 24 V, VGS= 0 V 1.0 µA

BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 30 V

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID =250 µA1.0 min V

RDS(ON)1 Drain to Source On Resistance VGS = 10 V, ID = 4.1 A 35 mΩ

RDS(ON)2 Drain to Source On Resistance VGS = 4.5 V, ID = 2.1 A 60 mΩ

Small-Outline SMD Reliability Report Page 12

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

Table II-D part type IRF7404 (SO-8)

Symbol Definition Applied Conditions Limit Units

IGSS Gate to Source Forward Leakage Current VGS = -8 V -100 nA

IGSS Gate to Source Reverse Leakage Current VGS = 8 V 100 nA

IDSS Drain to Source Leakage Current VDS = -16 V, VGS= 0 V -1 µA

BVDSS Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V -20 V

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID =-250 µA-0.7 min V

RDS(ON)1 Drain to Source On Resistance VGS = -4.5V, ID = -3.2 A 40 mΩ

RDS(ON)2 Drain to Source On Resistance VGS = -2.7 V, ID =-2.7 A 60 mΩ

Table II-E part type IRF7422D2 (SO-8)

Symbol Definition Applied Conditions Limit Units

IGSS Gate to Source Forward Leakage Current VGS = -8 V -100 nA

IGSS Gate to Source Reverse Leakage Current VGS = 8 V 100 nA

IDSS Drain to Source Leakage Current VDS = -16 V, VGS= 0 V -1 µA

BVDSS Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V -20 V

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID =-250 µA-0.7 min V

RDS(ON)1 Drain to Source On Resistance VGS = -4.5V, ID = -2.3 A 90 mΩ

RDS(ON)2 Drain to Source On Resistance VGS = -2.7 V, ID =-1.2 A 140 mΩ

Table II-F part type IRF7416 (SO-8)

Symbol Definition Applied Conditions Limit Units

IGSS Gate to Source Forward Leakage Current VGS = -20 V -100 nA

IGSS Gate to Source Reverse Leakage Current VGS = 20 V 100 nA

IDSS Drain to Source Leakage Current VDS = -24 V, VGS= 0 V -1.0 µA

BVDSS Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V -30 V

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID =-250 µA-1.0 min V

RDS(ON)1 Drain to Source On Resistance VGS = -10 V, ID = -5.6 A 20 mΩ

RDS(ON)2 Drain to Source On Resistance VGS = -4.5 V, ID = -2.8 A 35 mΩ

Small-Outline SMD Reliability Report Page 13

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

Table II-G part type IRF7103 (SO-8)

Symbol Definition Applied Conditions Limit Units

IGSS Gate to Source Forward Leakage Current VGS = 20 V 100 nA

IGSS Gate to Source Reverse Leakage Current VGS = -20 V -100 nA

IDSS Drain to Source Leakage Current VDS = 44 V, VGS= 0 V 2.0 µA

BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 55 V

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID =250 µA1.0 min V

RDS(ON)1 Drain to Source On Resistance VGS = 10 V, ID = 2.0 A 130 mΩ

RDS(ON)2 Drain to Source On Resistance VGS = 4.5 V, ID = 1.0 A 200 mΩ

Table II-H part type IRF7201 (SO-8)

Symbol Definition Applied Conditions Limit Units

IGSS Gate to Source Forward Leakage Current VGS = 20 V 100 nA

IGSS Gate to Source Reverse Leakage Current VGS = -20 V -100 nA

IDSS Drain to Source Leakage Current VDS = 24 V, VGS= 0 V 2.0 µA

BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 30 V

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID =250 µA1.0 min V

RDS(ON)1 Drain to Source On Resistance VGS = 10 V, ID = 7.0 A 30 mΩ

RDS(ON)2 Drain to Source On Resistance VGS = 4.5 V, ID = 3.5 A 50 mΩ

Table II-I part type IRF7504 (Micro8)

Symbol Definition Applied Conditions Limit Units

IGSS Gate to Source Forward Leakage Current VGS = -8 V -100 nA

IGSS Gate to Source Reverse Leakage Current VGS = 8 V 100 nA

IDSS Drain to Source Leakage Current VDS = -16 V, VGS= 0 V -1 µA

BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V -20 V

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 µA-0.7 min V

RDS(ON)1 Drain to Source On Resistance VGS = -4.5 V, ID =-1.2 A 270 mΩ

RDS(ON)2 Drain to Source On Resistance VGS = -2.7 V, ID =-0.60 A 400 mΩ

Small-Outline SMD Reliability Report Page 14

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EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

Table II-J part type IRF7603 (Micro8)

Symbol Definition Applied Conditions Limit Units

IGSS Gate to Source Forward Leakage Current VGS = 20 V 100 nA

IGSS Gate to Source Reverse Leakage Current VGS = -20 V -100 nA

IDSS Drain to Source Leakage Current VDS = 24 V, VGS= 0 V 1µA

BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 30 V

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID =250 µA1 min V

RDS(ON)1 Drain to Source On Resistance VGS = 10 V, ID = 3.7 A 35 mΩ

RDS(ON)2 Drain to Source On Resistance VGS = 4.5 V, ID =1.9 A 60 mΩ

Table II-K part type IRF7604 (Micro8)

Symbol Definition Applied Conditions Limit Units

IGSS Gate to Source Forward Leakage Current VGS = -8 V -100 nA

IGSS Gate to Source Reverse Leakage Current VGS = 8 V 100 nA

IDSS Drain to Source Leakage Current VDS = -16 V, VGS= 0 V -1 µA

BVDSS Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V -20 V

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID =-250 µA-0.7 min V

RDS(ON)1 Drain to Source On Resistance VGS = -4.5V, ID = -2.4 A 90 mΩ

RDS(ON)2 Drain to Source On Resistance VGS = -2.7 V, ID =-1.2 A 130 mΩ

Table II-L part type IRLMS1902 (Micro6)

Symbol Definition Applied Conditions Limit Units

IGSS Gate to Source Forward Leakage Current VGS = 8 V 100 nA

IGSS Gate to Source Reverse Leakage Current VGS = -8 V -100 nA

IDSS Drain to Source Leakage Current VDS = 16 V, VGS= 0 V 1µA

BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 20 V

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID =250 µA0.7 min V

RDS(ON)1 Drain to Source On Resistance VGS = 4.5 V, ID = 2.2 A 100 mΩ

RDS(ON)2 Drain to Source On Resistance VGS = 2.7 V, ID =1.1 A 170 mΩ

Small-Outline SMD Reliability Report Page 15

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Table II-M part type IRLMS6702 (Micro6)

Symbol Definition Applied Conditions Limit Units

IGSS Gate to Source Forward Leakage Current VGS = -8 V -100 nA

IGSS Gate to Source Reverse Leakage Current VGS = 8 V 100 nA

IDSS Drain to Source Leakage Current VDS = -16 V, VGS= 0 V -1 µA

BVDSS Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V -20 V

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID =-250 µA-0.7 min V

RDS(ON)1 Drain to Source On Resistance VGS = -4.5V, ID = -1.6 A 200 mΩ

RDS(ON)2 Drain to Source On Resistance VGS = -2.7 V, ID =-0.80 A 375 mΩ

Table II-N part type IRLMS5703 (Micro6)

Symbol Definition Applied Conditions Limit Units

IGSS Gate to Source Forward Leakage Current VGS = -20 V -100 nA

IGSS Gate to Source Reverse Leakage Current VGS = 20 V 100 nA

IDSS Drain to Source Leakage Current VDS = -24 V, VGS= 0 V -1 µA

BVDSS Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V -30 V

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID =-250 µA-1 min V

RDS(ON)1 Drain to Source On Resistance VGS = -10 V, ID = -1.6 A 200 mΩ

RDS(ON)2 Drain to Source On Resistance VGS = -4.5 V, ID =-0.80 A 400 mΩ

Table II-O part type IRLMS1503 (Micro6)

Symbol Definition Applied Conditions Limit Units

IGSS Gate to Source Forward Leakage Current VGS = 20 V 100 nA

IGSS Gate to Source Reverse Leakage Current VGS = -20 V -100 nA

IDSS Drain to Source Leakage Current VDS = 24 V, VGS= 0 V 1.0 µA

BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 30 V

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID =250 µA1.0 min V

RDS(ON)1 Drain to Source On Resistance VGS = 10 V, ID = 2.2 A 100 mΩ

RDS(ON)2 Drain to Source On Resistance VGS = 4.5 V, ID = 1.1 A 200 mΩ

Small-Outline SMD Reliability Report Page 16

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Table II-P part type IRLML2404 (Micro3)

Symbol Definition Applied Conditions Limit Units

IGSS Gate to Source Forward Leakage Current VGS = 8 V 100 nA

IGSS Gate to Source Reverse Leakage Current VGS = -8 V -100 nA

IDSS Drain to Source Leakage Current VDS = 16 V, VGS= 0 V 1.0 µA

BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 30 V

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID =250 µA0.7 min V

RDS(ON)1 Drain to Source On Resistance VGS = 4.5 V, ID = 0.93 A 250 mΩ

RDS(ON)2 Drain to Source On Resistance VGS = 2.7 V, ID = 0.47 A 350 mΩ

Table II-Q part type IRLML6302 (Micro3)

Symbol Definition Applied Conditions Limit Units

IGSS Gate to Source Forward Leakage Current VGS = -8 V -100 nA

IGSS Gate to Source Reverse Leakage Current VGS = 8 V 100 nA

IDSS Drain to Source Leakage Current VDS = -16 V, VGS= 0 V -1 µA

BVDSS Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V -20 V

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID =-250 µA-0.7 min V

RDS(ON)1 Drain to Source On Resistance VGS = -4.5V, ID = -0.61 A 600 mΩ

RDS(ON)2 Drain to Source On Resistance VGS = -2.7 V, ID =-0.31 A 900 mΩ

Table II-R part type IRF7413 (SO-8)

Symbol Definition Applied Conditions Limit Units

IGSS Gate to Source Forward Leakage Current VGS = 20 V 100 nA

IGSS Gate to Source Reverse Leakage Current VGS = -20 V -100 nA

IDSS Drain to Source Leakage Current VDS = 24 V, VGS= 0 V 1.0 µA

BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 30 V

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID =250 µA1.0 min V

RDS(ON)1 Drain to Source On Resistance VGS = 10 V, ID = 7.3 A 11 mΩ

RDS(ON)2 Drain to Source On Resistance VGS = 4.5 V, ID = 3.7 A 18 mΩ

Small-Outline SMD Reliability Report Page 17

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Test Purposes & Common Failure Mechanisms

High Temperature Reverse Bias (HTRB)

Purpose: To accelerate temperature/voltage failure mechanisms and detect those resulting

from manufacturing defects. This test redistributes mobile ions by means of temperature and

voltage stress which may result in junction leakage when sufficient ionic contamination is

present and accelerate failures resulting from encapsulated and/or die-coated impurities. This

test explicitly accelerates breakdown voltage degradation on inadequate termination structures.

Description: Devices are biased at rated VDSS at TJ (Max)

Common Failure Mechanisms: Ionic Contamination, diffusion defects, oxide defects,

metallization defects, surface inversion and surface charge movement, irregularities in the crystal

lattice structure, assembly induced foreign material, moisture and hydrogen entrapment.

Common Failure Mode: Parametric shifts resulting from increased leakage.

Sensitive Parameters: BVDSS, IDSS, VGS(th) & RDS(ON)

Typical Conditions: 1000 hours at TA = 150 °C, VDSS = 100% rated BVDSS

Circuit Configuration

Small-Outline SMD Reliability Report Page 18

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Test Purposes & Common Failure Mechanisms

High Temperature Gate Bias (HTGB)

Purpose: To electrically stress the gate oxide and accelerate dielectric breakdown failures

resulting from imperfections in the gate oxide structure. Additionally, to align mobile ions by

means of temperature and voltage stress which result in leakage paths between terminals if ionic

contamination is present.

Description: Devices are biased at rated VGSS at TJ (Max)

Common Failure Mechanisms: Contamination of the gate oxide during wafer fabrication,

assembly induced foreign material, metallization defects, diffusion defects, surface inversion and

surface charge movement.

Common Failure Mode: Gate oxide rupture or leakage.

Sensitive Parameters: IGSS & VGS(th)

Typical Conditions: 1000 hours at TA = 150 °C, VGSS = 100% or 80% rated VGSS

Circuit Configuration

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Test Purposes & Common Failure Mechanisms

Temperature Humidity Bias (THB)

Purpose: To determine the moisture resistance of the package. To accelerate both moisture

and temp/voltage failure mechanisms and detect those with defects resulting from

manufacturing aberrations. This test aligns mobile ions by means of temperature and voltage

stresses which will result in leakage paths between terminals if ionic contamination is present.

Check the purity of the encapsulation material to die interface. The presence of both moisture

and bias rapidly accelerates contamination related failures.

Description: Devices are biased at rated VDSS in a moisture chamber while being subjected to

an elevated humidity and temperature.

Common Failure Mechanisms: Ionic Contamination, moisture penetration, chemical

corrosion, electrolytic corrosion from applied bias in presence of elevated humidity/temperature,

electrolytic corrosion from dissimilar metals, metallization defects, diffusion defects, surface

inversion and surface charge movement.

Common Failure Mode: Parametric shifts due to the penetration of moisture and subsequent

metallization corrosion.

Sensitive Parameters: IDSS , IGSS , & RDS(ON)

Typical Conditions: 1000 hours at TA = 85 °C and RH = 85% , VDSS = 100% rated BVDSS

Circuit Configuration

Small-Outline SMD Reliability Report Page 20

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Test Purposes & Common Failure Mechanisms

Temperature Cycling (TC)

Purpose: To determine the resistance of the device to extreme temperatures and the transition

between those extremes. These stresses expose the device to mechanical stress by reason of the

thermal mismatch between materials. These conditions may be encountered in equipment

operated intermittently in low temperature areas or during transportation.

Description: Devices are cycled between a cold chamber and a hot chamber.

Common Failure Mechanisms: Die bond fatigue, wire bond fatigue, thermo-mechanical

fatigue of leads, heatsink, leadframe, packaging material, silicon/metal interfaces and

metal/metal interfaces, die cracking, junctions defects, die metallization defects..

Common Failure Mode: Parametric shifts in the overall on-resistance of the device caused by

thermo-mechanical fatigue of the interconnect and/or bonding materials. Catastrophic failures

due to die and/or package cracking.

Sensitive Parameters: IDSS & RDS(ON)

Typical Conditions: 1000 cycles at TA = + 150 °C to - 55 °C

Small-Outline SMD Reliability Report Page 21

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Reliability Data

Small-Outline SMD Reliability Report Page 22

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HTGB - High Temperature Gate Bias

1) P-channel Device with Gate Oxide of 250 Å

Part Package Wafer lot Stress Condition 24 hours 168 hours 500 hours 1000 hours

Number Type Number VGSS(V) TJ (°C) S.S. Fails S.S. Fails S.S. Fails S.S. Fails

IRLML6302 Micro3 702347A 8 150 35 0 35 0 35 0 35 0

IRF7504 Micro8 702177A 8 150 30 0 30 0 30 0 30 0

IRF7504 Micro8 702075 8 150 30 0 30 0 30 0 30 0

IRF7604 Micro8 704504 10 150 60 0 60 0 60 0 60 0

IRLMS6702 Micro6 702177 8 150 35 0 35 0 35 0 35 0

IRF7404 SO-8 701685-O 8 150 60 0 60 0 60 0 60 0

IRF7404 SO-8 701890 8 150 120 0 120 1o 120 1o 120 1o

IRF7404 SO-8 702169A 8 150 30 0 30 0 30 0 30 0

IRF7404 SO-8 702785 10 150 60 0 60 0 60 0 60 0

IRF7404 SO-8 703743 10 150 120 0 120 0 120 0 120 0

IRF7304 SO-8 4W6K 10 150 60 0 60 0 60 0 60 0

IRF7304 SO-8 4W6K2 10 150 60 0 60 0 60 0 60 0

IRF7314 SO-8 702924 8 150 30 0 30 0 30 0 30 0

IRF7314 SO-8 702924 10 150 30 0 30 0 30 0 30 0

IRF7314 SO-8 702924 10 150 60 0 60 0 60 0 60 0

IRF7422D2 SO-8 704618A 10 150 523 0 39 0 39 0 39 0

IRF7422D2 SO-8 705171 10 150 521 0 39 0 39 0 39 0

IRF7422D2 SO-8 704935 10 150 520 0 39 0 39 0 39 0

Total devices-failures 2384 1 937 1 937 1 937 1

Total devices-dielectric failures 2384 0 937 1 937 1 937 1

Total device-hours 57,216 1.92E+05 5.03E+05 9.72E+05

2) P-channel Device with Gate Oxide of 450 Å

Part Package Wafer lot Stress Condition 24 hours 168 hours 500 hours 1000 hours

Number Type Number VGSS(V) TJ (°C) S.S. Fails S.S. Fails S.S. Fails S.S. Fails

IRF7506 Micro8 700950 16 150 30 0 30 0 30 0 30 0

IRF7606 Micro8 702626A 16 150 60 0 60 0 60 0 60 0

IRF7606 Micro8 702504 16 150 30 0 30 0 30 0 30 0

IRLMS5703 Micro6 702063 16 150 35 0 35 0 35 0 35 0

IRLML5103 Micro3 702403 16 150 35 0 35 0 35 0 35 0

IRF7321D2 SO-8 702671/E096 16 150 30 0 30 0 30 0 30 0

IRF7321D2 SO-8 702672X/7E109 16 150 30 0 30 0 30 0 30 0

IRF7321D2 SO-8 702671/7F145 16 150 30 0 30 0 30 0 30 0

IRF7406 SO-8 702651 16 150 120 0 120 0 120 0 120 0

IRF7406 SO-8 702341A 16 150 30 0 30 0 30 0 30 0

IRF7416 SO-8 701979D 16 150 60 0 60 0 60 0 60 0

IRF7416 SO-8 702151A 16 150 60 0 60 0 60 0 60 0

IRF7416 SO-8 702513A 16 150 30 0 30 0 30 0 30 0

IRF7416 SO-8 702404 16 150 30 0 30 0 30 0

IRF7316 SO-8 702671 16 150 30 0 30 0 30 0 30 0

Total devices-failures 640 0 640 0 640 0 610 0

Total devices-dielectric failures 640 0 640 0 640 0 640 0

Total device-hours 15,360 1.08E+05 3.20E+05 6.25E+05

Note:

o. At 64 hours, 1 unit failed IDSS(147 µA), IGSS(> 1 µA). FA-96-1278-a found gate oxide rupture to be

the cause of failure.

Small-Outline SMD Reliability Report Page 23

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HTGB - High Temperature Gate Bias

3) N-channel Device with Gate Oxide of 250 Å

Part Package Wafer lot Stress Condition 24 hours 168 hours 500 hours 1000 hours

Number Type Number VGSS(V) TJ (°C) S.S. Fails S.S. Fails S.S. Fails S.S. Fails

IRLML2402 Micro3 702001 8 150 70 0 70 0 70 0 70 0

IRLMS1902 Micro6 702114 8 150 35 0 35 0 35 1p 35 1p

IRF7601 Micro8 702593 10 150 30 0 30 0 30 0 30 0

IRF7521D1 Micro8 702114 8 150 30 0 30 0 30 0 30 0

IRF7401 SO-8 700216-X 8 150 30 0 30 0 30 0 30 0

IRF7401 SO-8 700216-O 8 150 30 0 30 0 30 0 30 0

IRF7401 SO-8 700252-O 8 150 30 1a 30 1a 30 1a 30 1a

IRF7401 SO-8 700252 8 150 60 0 60 0 60 0

IRF7401 SO-8 700582 8 150 60 1b 60 1b 60 1b 60 1b

IRF7401 SO-8 700998 8 150 60 0 60 0 60 0 60 2c

IRF7421D1 SO-8 1B1S/7E095 10 150 90 0 90 1q 90 1q 90 1q

Total devices-failures 525 2 525 3 525 4 465 6

Total devices-dielectric failures 525 1 525 1 25 2 465 4

Total device-hours 12,600 8.82E+04 2.63E+05 4.95E+05

Note:

a. At 24 hours, 1 unit failed all parameters but VF. FA-96-1160-a found foreign material on die surface to

be the cause of failure.

b. At 24 hours, 1 unit failed all parameters but VF. FA-96-1196-a found gate oxide rupture to be the cause

of failure.

c. At 660 hours, 2 units failed all parameters but VF. FA-96-1192-a found gate oxide rupture to be the

cause of failure. FA-96-1192-b found gate oxide rupture to be the cause of failure.

p. At 419 hrs, 1 unit failed all parameters but VF

q. At 250 hrs, 1 unit failed IDSS(10 mA) and BVDSS(0 V). FA found failure site in field plate.

Small-Outline SMD Reliability Report Page 24

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HTGB - High Temperature Gate Bias

4) N-channel Device with Gate Oxide of 450 Å

Part Package Wafer lot Stress Condition 24 hours 168 hours 500 hours 1000 hours

Number Type Number VGSS(V) TJ (°C) S.S. Fails S.S. Fails S.S. Fails S.S. Fails

IRLML5103 Micro3 702610AA 16 150 35 0 35 0 35 0 35 0

IRF7603 Micro8 702153 16 150 30 0 30 0 30 0 30 0

IRF7603 Micro8 701955 16 150 30 0 30 0 30 0 30 0

IRF7603 Micro8 704022 16 150 24 0 24 0 24 0 24 0

IRF7523D1 Micro8 702578/7E110 16 150 30 1r 30 1r 30 1r 30 1r

IRF7523D1 Micro8 4C8U/7E095 16 150 30 0 30 0 30 0 30 0

IRF7523D1 Micro8 702578/7F146 16 150 30 0 30 0 30 0 30 0

IRF7403 SO-8 700400 20 150 21 0 21 0 21 0 21 0

IRF7403 SO-8 700771 20 150 39 0 39 0 39 0 39 0

IRF7403 SO-8 700400-X 20 150 21 0 21 0 21 0 21 0

IRF7403 SO-8 700769 20 150 30 0 30 0 30 0 30 0

IRF7403 SO-8 700217 20 150 30 0 30 0 30 0 30 0

IRF7403 SO-8 700344 20 150 27 0 27 0 27 0 27 0

IRF7403 SO-8 700400 20 150 45 0 45 0 45 0 45 0

IRF7403 SO-8 703867 16 150 120 0 120 0 120 0 120 0

IRF7403 SO-8 4P9X 16 150 60 0 60 0 60 0 60 0

IRF7413 SO-8 702013 16 150 60 0 60 1d 60 1d 60 1d

IRF7413 SO-8 701974 16 150 60 0 60 0 60 0 60 0

IRF7413 SO-8 701929A 16 150 60 0 60 0 60 0 60 0

IRF7413 SO-8 702055X 16 150 30 0 30 0 30 0 30 0

IRF7413 SO-8 704101A 16 175 78 0 78 0 78 0 78 0

IRF7413 SO-8 704102A 16 175 78 0 78 0 78 0 78 0

IRF7413 SO-8 704103A 16 175 78 0 78 0

IRF7303 SO-8 703868 16 150 120 0 120 0 120 0 120 0

IRF7313 SO-8 702668 16 150 30 0 30 0 30 0 30 0

IRF7103 SO-8 701962A 16 150 30 0 30 0 30 0 30 0

IRF7201 SO-8 702147 16 150 30 0 30 0 30 0 30 0

Total devices-failures 1256 1 1256 2 1256 2 1178 2

Total devices-dielectric failures 1256 0 1256 0 1256 0 1178 0

Total device-hours 30,144 2.11E+05 6.28E+05 1.22E+06

Note:

d. At 160 hours, 1 unit failed IDSS(82 µA). It is a parametric failure.

r. At 95 hours, 1 unit failed IDSS(5.94 µA). It is a parametric failure

Small-Outline SMD Reliability Report Page 25

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HTRB - High Temperature Reverse Bias

1) P-channel Device

Part Package Wafer lot Stress Condition 48 hours 330 hours 660 hours 1000 hours

Number Type Number VDSS(V) TJ (°C) S.S. Fails S.S. Fails S.S. Fails S.S. Fails

IRLMS6702 Micro6 702177 20 150 35 0 35 0 35 0 35 0

IRLMS5703 Micro6 701980 30 150 70 0 70 0 70 0 70 0

IRLMS5703 Micro6 702063 30 150 35 0 35 0 35 0 35 0

IRLML5103 Micro3 702403 30 150 35 0 35 0 35 0 35 0

IRF7504 Micro8 702177A 20 150 30 0 30 0 30 0 30 0

IRF7506 Micro8 700950 30 150 30 0 30 0 30 0 30 0

IRF7504 Micro8 702075 20 150 30 0 30 0 30 0 30 0

IRF7606 Micro8 702504 30 150 30 0 30 0 30 0 30 0

IRF7404 SO-8 701685-O 20 150 60 0 60 0 60 0 60 0

IRF7404 SO-8 701890 20 150 60 0 60 0 60 0 60 0

IRF7404 SO-8 702169A 20 150 30 0 30 0 30 0 30 0

IRF7406 SO-8 702341A 30 150 30 0 30 0 30 0 30 0

IRF7416 SO-8 701979D 30 150 60 0 60 0 60 0 60 0

IRF7416 SO-8 702151A 30 150 60 0 60 0 60 0 60 0

IRF7416 SO-8 702513A 30 150 30 0 30 0 30 0 30 0

IRF7416 SO-8 702404 30 150 30 0 30 0 30 0 30 0

IRF7321D2 SO-8 702671/E096 24 110 30 0 30 0 30 0 30 0

IRF7321D2 SO-8 702672/7E109 24 110 30 0 30 0 30 0 30 0

IRF7422D2 SO-8 704618/7E096 20 115 523 0 39 0 39 0 39 0

IRF7422D2 SO-8 705171/7E109 20 115 521 0 39 0 39 0 39 0

IRF7422D2 SO-8 704835/7F145 20 115 520 0 39 0 39 0 39 0

Total devices-failures 2309 0 862 0 862 0 862 0

Total device-hours 110,832 3.54E+05 6.38E+05 9.31E+05

Small-Outline SMD Reliability Report Page 26

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HTRB - High Temperature Reverse Bias

2) N-channel Device

Part Package Wafer lot Stress Condition 48 hours 330 hours 660 hours 1000 hours

Number Type Number VGSS(V) TJ (°C) S.S. Fails S.S. Fails S.S. Fails S.S. Fails

IRLML2402 Micro3 702001 20 150 98 0 98 0 98 1e 98 1e

IRLML2402 Micro3 702115 20 150 35 0 35 0 35 0 35 0

IRLML2803 Micro3 702610 30 150 35 0 35 0 35 0 35 0

IRLMS1503 Micro6 700950 30 150 70 0 70 0 70 0 70 0

IRLMS1902 Micro6 702114 20 150 35 0 35 0 35 0 35 0

IRF7603 Micro8 702153 30 150 30 0 30 0 30 0 30 0

IRF7603 Micro8 701955 30 150 30 0 30 0 30 0 30 0

IRF7523D1 Micro8 702578/7E110 24 110 30 0 30 0 30

IRF7523D1 Micro8 4C8U/7E095 24 110 30 0 30 0 30

IRF7523D1 Micro8 702578/7F146 24 110 30 0 30 0 30

IRF7401 SO-8 700216-X 20 150 30 0 30 0 30 0 30 0

IRF7401 SO-8 700216-O 20 150 30 0 30 0 30 0 30 0

IRF7401 SO-8 702061A 20 150 30 0 30 0 30 0 30 0

IRF7403 SO-8 700217-O 30 150 30 0 30 0 30 0 30 0

IRF7403 SO-8 700400-X 30 150 30 0 30 0 30 0 30 0

IRF7403 SO-8 700400 30 150 30 0 30 0 30 0 30 0

IRF7403 SO-8 700344 30 150 30 0 30 0 30 0 30 0

IRF7403 SO-8 704101A 30 175 78 0 78 0 78 0 78 0

IRF7403 SO-8 704102A 30 175 78 0 78 0 78 0 78 0

IRF7403 SO-8 704103A 30 175 78 0 78 0

IRF7413 SO-8 702013 30 150 60 0 60 0 60 0 60 0

IRF7413 SO-8 701974 30 150 60 0 60 0 60 0 60 0

IRF7413 SO-8 701929A 30 150 60 0 60 0 60 0 60 1f

IRF7103 SO-8 701962A 30 150 30 0 30 0 30 0 30 0

IRF7201 SO-8 702147 30 150 30 0 30 0 30 0 30 0

IRF7421D1 SO-8 1B1S/7E095 24 115 90 0 90 0 90 0 90 0

Total devices-failures 1197 0 1197 0 1197 1 1029 2

Total device-hours 57,456 3.95E+05 7.90E+05 1.14E+06

Note:

e. At 635 hours, 1 unit failed Vth(536 mV). Limit is 700 mV. FA-96-1337-a found ionic contamination to

be the cause of failure.

f. At 1000 hour, 1 unit failed IGSS(> 1mA), Vth(130 mV), and RDON(4.3 Ω). FA-96-1323-a found probe

mark to be the cause of failure.

Small-Outline SMD Reliability Report Page 27

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THB - Temperature Humidity Bias (85 °C/ 85% RH)

1) P-channel Device

Part Package Wafer lot Stress Condition 48 hours 330 hours 660 hours 1000 hours

Number Type Number VDSS(V) % RH TJ (°C) S.S. Fails S.S. Fails S.S. Fails S.S. Fails

IRLMS6702 Micro6 702177 20 85 85 35 0 35 0 35 0 35 2m

IRLMS5703 Micro6 701980 30 85 85 70 0 70 0 70 0 70 1n

IRLMS5703 Micro6 702063 30 85 85 23 0 23 0 23 0 23 0

IRLML5103 Micro3 702403 30 85 85 35 0 35 0 35 0 35 0

IRF7504 Micro8 702177A 20 85 85 30 0 30 0 30 1l 30 1l

IRF7506 Micro8 700950 30 85 85 30 0 30 0 30 0 30 0

IRF7504 Micro8 702075 20 85 85 30 0 30 0 30 0 30 0

IRF7606 Micro8 702504 30 85 85 30 0 30 0 30 0 30 0

IRF7404 SO-8 701890 20 85 85 60 0 60 0 60 0 60 0

IRF7404 SO-8 702169A 20 85 85 30 0 30 0 30 0 30 0

IRF7406 SO-8 702341A 30 85 85 30 0 30 0 30 0 30 0

IRF7416 SO-8 701979D 30 85 85 60 0 60 0 60 0 60 0

IRF7416 SO-8 702513A 30 85 85 30 0 30 0 30 0 30 0

IRF7416 SO-8 702404 30 85 85 30 0 30 0 30 0 30 0

IRF7316 SO-8 702671 30 85 85 30 0 30 0 30 0 30 0

IRF7321D2 SO-8 702671/E096 30 85 85 30 0 30 0 30 0 30 0

IRF7321D2 SO-8 702672/7E109 30 85 85 30 0 30 0 30 0 30 0

IRF7321D2 SO-8 702671/7F145 30 85 85 30 0 30 0 30 0 30 0

IRF7422D2 SO-8 704618/7E096 20 85 85 39 0 39 0 39 0 39 0

IRF7422D2 SO-8 705171/7E109 20 85 85 39 0 39 0 39 0 39 0

IRF7422D2 SO-8 704835/7F145 20 85 85 39 0 39 0 39 0 39 0

Total devices-failures 760 0 760 0 760 1 760 4

Total device-hours 36,480 2.51E+05 5.02E+05 7.60E+05

Note:

m. At 1000 hours, 2 units failed. 1 failed IGSS(> 1 µA), IDSS(9 µA). 1 failed IDSS(2.3 µA). Both units

recovered after sitting on shelf.

n. At 739 hours, 1 unit failed IGSS(342 nA). This device recovered after sitting on shelf.

l. At 743 hours, 1 unit failed IDSS(40.6 µA). It is a parametric failure, not a functional failure.

Small-Outline SMD Reliability Report Page 28

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THB - Temperature Humidity Bias (85 °C/ 85% RH)

2) N-channel Device

Part Package Wafer lot Stress Condition 48 hours 330 hours 660 hours 1000 hours

Number Type Number VDSS(V) % RH TJ (°C) S.S. Fails S.S. Fails S.S. Fails S.S. Fails

IRLMS1503 Micro6 702177 30 85 85 70 0 70 0 70 0 70 0

IRLMS1902 Micro6 702114 20 85 85 35 0 35 0 35 0

IRLML2402 Micro3 702001 20 85 85 105 0 105 0 105 0 105 0

IRLML2803 Micro3 702610 30 85 85 34 0 34 0 34 0 34 0

IRF7603 Micro8 702153 30 85 85 30 0 30 0 30 0 30 0

IRF7603 Micro8 701955 30 85 85 30 0 30 0 30 0 30 0

IRF7523D1 Micro8 702578/7E110 30 85 85 30 0 30 0 30 0 30 0

IRF7523D1 Micro8 4C8U/7E095 30 85 85 30 0 30 0 30 0 30 0

IRF7523D1 Micro8 702578/7F146 30 85 85 30 0 30 0 30 0 30 0

IRF7521D1 Micro8 702578 30 85 85 90 0 90 0 90 0 90 0

IRF7401 SO-8 700216-O 20 85 85 30 1g 30 1g 30 1g 30 1g

IRF7401 SO-8 700216-X 20 85 85 30 0 30 0 30 0 30 0

IRF7401 SO-8 700252-O 20 85 85 30 0 30 0 30 0 30 0

IRF7401 SO-8 702061A 20 85 85 30 0 30 0 30 0 30 0

IRF7403 SO-8 700217-O 30 85 85 60 0 60 1h 60 1h 60 1h

IRF7403 SO-8 700400-X 30 85 85 30 0 30 0 30 0 30 0

IRF7403 SO-8 700400 30 85 85 30 0 30 0 30 0 30 0

IRF7403 SO-8 700344 30 85 85 30 0 30 0 30 1i 30 1i

IRF7413 SO-8 702055X 30 85 85 30 0 30 0 30 0 30 0

IRF7103 SO-8 702166 55 85 85 30 0 30 0 30 0 30 0

IRF7201 SO-8 702147 30 85 85 30 0 30 0 30 0 30 0

Total devices-failures 844 1 844 2 844 3 809 3

Total device-hours 40,512 2.79E+05 5.57E+05 8.32e+05

Note:

g. At 72 hours, 1 unit failed IDSS(20 µA). It is a parametric failure, not a functional failure.

h. At 96 hour, 1 unit failed IGSS+(144 µA), IGSS-(202 µA), BVDSS(24.6 V), and IDSS (228 µA). This

device recovered after 24 hours bake @ 130 °C. Moisture ingression is the probable cause of failure.

i. At 700 hours, 1 unit failed IDSS(48 µA). It is a parametric failure, not a functional failure.

Small-Outline SMD Reliability Report Page 29

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TC - Temperature Cycling

1) P-channel Device

Part Package Wafer lot Stress Condition 50 cycles 330 cycles 660 cycles 1000 cycles

Number Type Number T1 (°C) T2 (°C) S.S. Fails S.S. Fails S.S. Fails S.S. Fails

IRLML6302 Micro3 702347A -55 150 35 0 35 0 35 1k 35 1k

IRLML5103 Micro3 702403A -55 150 35 0 35 0 35 0 35 0

IRLMS5703 Micro6 702063 -55 150 35 0 35 0 35 0 35 0

IRLMS1503 Micro6 702177 -55 150 35 0 35 0 35 0 35 0

IRF7504 Micro8 702177A -55 150 30 0 30 0 30 0 30 0

IRF7504 Micro8 702075 -55 150 30 0 30 0 30 0 30 0

IRF7506 Micro8 700950 -55 150 30 0 30 0 30 0 30 0

IRF7606 Micro8 702504 -55 150 30 0 30 0 30 0 30 0

IRF7504 Micro8 702075 -55 150 28 0 28 0 28 0 28 0

IRF7422D2 SO-8 704618/7E096 -55 150 39 0 39 0 39 0 39 0

IRF7422D2 SO-8 705171/7E109 -55 150 39 0 39 0 39 0 39 0

IRF7422D2 SO-8 704835/7F145 -55 150 39 0 39 0 39 0 39 0

IRF7321D2 SO-8 702671/E096 -55 150 29 0 29 0 29 0 29 0

IRF7321D2 SO-8 702672/7E109 -55 150 30 0 30 0 30 0 30 0

IRF7321D2 SO-8 702671/7F145 -55 150 28 0 28 0 28 0 28 0

IRF7404 SO-8 701890 -55 150 60 0 60 0 60 0 60 0

IRF7404 SO-8 702169A -55 150 30 0 30 0 30 0 30 0

IRF7404 SO-8 701890 -55 150 60 0 60 0 60 0 60 0

IRF7416 SO-8 701979D -55 150 60 0 60 0 60 0 60 1j

IRF7416 SO-8 702513A -55 150 30 0 30 0 30 0 30 0

IRF7416 SO-8 702404 -55 150 30 0 30 0 30 0 30 0

IRF7316 SO-8 702671 -55 150 30 0 30 0 30 0 30 0

IRF7314 SO-8 702924 -55 150 30 0 30 0 30 0 30 0

IRF7389 SO-8 702671 -55 150 69 0 69 0 69 0 69 0

Total devices-failures 891 0 891 0 891 1 891 2

Total device-hours 44,550 2.94E+05 5.88E+05 8.91E+05

Note:

j. At 1000 cycles, 1 unit failed IDSS(12.43 µA). It is a parametric failure, not a functional failure.

k. At 660 cycles, 1 unit failed IGSS+(3.44 µA) and IGSS-(525 nA). It is a parametric failure, not a

functional failure.

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TC - Temperature Cycling

2) N-channel Device

Part Package Wafer lot Stress Condition 50 cycles 330 cycles 660 cycles 1000 cycles

Number Type Number T1 (°C) T2 (°C) S.S. Fails S.S. Fails S.S. Fails S.S. Fails

IRLML2402 Micro3 702001 -55 150 105 0 105 0 105 0 105 0

IRLML2402 Micro3 702115 -55 150 35 0 35 0 35 0 35 0

IRLML2803 Micro3 702610 -55 150 35 0 35 0 35 0 35 0

IRLMS1902 Micro6 702114 -55 150 35 0 35 0 35 0 35 0

IRF7603 Micro8 702153 -55 150 30 0 30 0 30 0 30 0

IRF7603 Micro8 701955 -55 150 30 0 30 0 30 0 30 0

IRF7523D1 Micro8 702578/7E110 -55 150 60 0 60 0 60 0 60 0

IRF7523D1 Micro8 4C8U/7E095 -55 150 60 0 60 0 60 0 60 0

IRF7523D1 Micro8 702578/7F146 -55 150 60 0 60 0 60 0 60 0

IRF7421D1 SO-8 701955 -25 125 48 0 48 0 48 0 48 0

IRF7421D1 SO-8 1B1S/7E095 -55 150 60 0 60 0 60 0 60 0

IRF7401 SO-8 700216-O -55 150 30 0 30 0 30 0 30 0

IRF7401 SO-8 700216-X -55 150 30 0 30 0 30 0 30 0

IRF7401 SO-8 700252-O -55 150 30 0 30 0 30 0 30 0

IRF7401 SO-8 702061A -55 150 30 0 30 0 30 0 30 0

IRF7403 SO-8 700217-O -55 150 60 0 60 0 60 0 60 0

IRF7403 SO-8 700400-X -55 150 30 0 30 0 30 0 30 0

IRF7403 SO-8 700400 -55 150 30 0 30 0 30 0 30 0

IRF7403 SO-8 700344 -55 150 30 0 30 0 30 0 30 0

IRF7413 SO-8 702055X -55 150 30 0 30 0 30 0 30 0

IRF7313 SO-8 702668 -55 150 30 0 30 0 30 0 30 0

IRF7389 SO-8 703656 -55 150 69 0 69 0 69 0 69 0

IRF7103 SO-8 701962A -55 150 60 0 60 0 60 0

IRF7201 SO-8 702147 -55 150 30 0 30 0 30 0 30 0

Total devices-failures 1,167 01,167 01,167 01,167 0

Total device-hours 56,016 3.85E+05 7.70E+05 1.17E+06

Small-Outline SMD Reliability Report Page 31

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Failure Rate Estimate

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A) Oxide Breakdown Failure Mechanism

Oxide breakdown is greatly accelerated by high electric field. International Rectifier’s

internal data found infant motality failures due to defect-related oxide breakdown failure

mechanism correlate well with AT&T Voltage Acceleration Model.

Assumptions:

1) AT&T Voltage Acceleration Model1

AV = exp [C*(V1-V2)/tOX] where C = 290 Å/volt

2) Activation energy of 0.4 eV

3) Tuse = 90 °C

4) tOX = 250 Å and Vuse = 3.3 volts for the 20 volts device

5) tOX = 450 Å and Vuse = 10 volts for the 30 volts device

Calculations:

1) Temperature Acceleration = exp{(0.4/8.62E-5) * (1/(273+90) - 1/(273+150))} = 6.13

2) Voltage Acceleration = exp{(290/250) * (8-3.3)} = 233 for the 20 volts device

= exp{(290/450) * (20-10)} = 629 for the 30 volts device

3) Total device hours and demonstrated failure rate at the use condition:

BVDSS HTGB Test @ Use Condition Number FIT Rate

Rating Polarity VGSS(V) Dev-hrs A.F. Dev-hrs TDDB fails @60% UCL

20V P-Ch 85.22E+05 1430 7.46E+08 1

10 4.50E+05 14,549 6.55E+09 00.13

20V N-Ch 83.75E+05 1430 5.36E+08 3

10 1.20E+05 14,549 1.75E+09 10.89

30V P-Ch 16 535,000 293 1.57E+08 05.85

30V N-Ch 20 213,000 3857 8.22E+08 0

16 1.22E+06 293 3.56E+08 00.58

Total 3.43+06 1.13E+10 5 0.56

1 Klinger, David J. et al., eds. AT&T Reliability Manual New York: Van Nostrand Reinhold, 1990

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B) Ionic Contamination Failure Mechanism

At elevated temperature, positively charged ions will be rearranged under influence of

electric field to cause higher leakage current or shift in threshold voltage. Failure can be

recovered with a high temperature bake without bias, and can be reproduced under high

temperature reverse bias condition.

Assumptions:

1) Activation energy of 1.0 eV

2) Tuse = 90 °C

Calculations:

1) Temperature Acceleration = exp{(1.0/8.62E-5) * (1/(273+90) - 1/(273+150))} = 93

2) Total device hours and demonstrated failure rate at the use condition:

HTRB Test @ Use Condition Number FIT Rate

Polarity TJ (°C) Dev-hrs A.F. Dev-hrs Ionic Fails @60% UCL

P-Ch 150 9.31E+05 93 8.66E+07 010.58

N-Ch 150 1.14E+06 93 1.06E+08 119.08

Total 2.07E+06 1.93E+08 1 10.50

Page 34

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Variable Data

Small-Outline SMD Reliability Report Page 35

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PRE/POST ELECTRICAL DATA

High Temperature Reverse Bias (HTRB)

1. IRF7403 (Sample size of 30)

Applied Pre Data 1000 hrs Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 20V 22.9 nA 6.5 nA 72.8 nA 8.8 nA 49.9 nA 100 nA 3.93

IGSS-VGS = - 20V -0.90 nA 0.56 nA -1.6 nA 1.7 nA -0.70 nA -100 nA 58.96

BVDSS ID = 250 µA

VGS = 0 V 37.21 V 0.39V 37.40 V 0.39 V 0.19 V 30 V 6.14

VGS(th) VDS = VGS

ID = 250 µA2.49 V 0.04 V 2.47 V 0.04 V -0.02 V 1.0 V 12.45

IDSS VDS = 24 V

VGS = 0 V 9.9 nA 36.8 nA 35.2 nA 54.1 nA 15.8 nA 1 µA8.96

RDS(ON) VGS = 10 V

ID = 4.0 A 16.1 mΩ0.3 mΩ16.6 mΩ0.6 mΩ0.5 mΩ22 mΩ6.18

2. IRF7401 (Sample Size of 30)

Applied Pre Data 1500 hrs Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 8 V 4.3 nA 4.4 nA 1.6 nA 1.4 nA -2.7 nA 100 nA 7.28

IGSS-VGS = - 8V -4.3 nA 4.1 nA -1.4 nA 0.9 nA 2.9 nA -100 nA 7.82

BVDSS ID = 250 µA

VGS = 0 V 26.01 V 0.47 V 26.18 V 0.41 V 0.17 V 20 V 4.24

VGS(th) VDS = VGS

ID = 250 µA1.14 V 0.04V 1.14 V 0.04 V 0.00 V 0.7 V 4.10

IDSS VDS = 16 V

VGS = 0 V 48.3 nA 33.8 nA 54.7 nA 27.8 nA 6.4 nA 1 µA9.37

RDS(ON) VGS = 4.5 V

ID = 4.1 A 14.0 mΩ0.6 mΩ15.0 mΩ1.0 mΩ1.0 mΩ22 mΩ4.52

Small-Outline SMD Reliability Report Page 36

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PRE/POST ELECTRICAL DATA

High Temperature Reverse Bias (HTRB)

3. IRF7404 (Sample Size of 30)

Applied Pre Data 1000 hrs Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 8V 3.6 nA 4.2 nA 1.2 nA 0.9 nA -2.4 nA 100 nA 7.65

IGSS-VGS = - 8V -4.6 nA 4.1 nA -1.4 nA 1.4 nA 3.2 nA -100 nA 7.84

BVDSS ID =-250 µA

VGS = 0 V -25.50 V 1.07 V -25.29 V 0.12 V 0.21 V -20 V 1.71

VGS(th) VDS =VGS

ID =-250 µA-0.86 V 0.04 V -0.86 V 0.04 V 0.00V -0.7 V 1.21

IDSS VDS = -16 V

VGS = 0 V -4.6 nA 6.5 nA -0.4 nA 1.0 nA 4.2 nA -1 µA51.17

RDS(ON) VGS = -4.5 V

ID = -3.2 A 29.5 mΩ0.5 mΩ30.1 mΩ0.9 mΩ0.5 mΩ40 mΩ6.66

4. IRF7504 (Sample Size of 30)

Applied Pre Data 1000 hrs Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 8V 12.3 nA 14.4 nA 4.2 nA 4.0 nA -8.1 nA 100 nA 2.03

IGSS-VGS = - 8V -9.9 nA 10.9 nA -4.5 nA 3.8 nA 5.4 nA -100 nA 2.76

BVDSS ID =-250 µA

VGS = 0 V -25.15 V 0.58 V -25.08 V 0.52 V 0.07 V -20 V 2.95

VGS(th) VDS =VGS

ID =-250 µA-0.96 V 0.03 V -0.96 V 0.03 V 0.00V -0.7 V 2.87

IDSS VDS = -16 V

VGS = 0 V -25.2 nA 40.4 nA -20.6 nA 27.8 nA 4.6 nA -1 µA8.05

RDS(ON) VGS = -4.5 V

ID = -1.2 A 169.9 mΩ3.6 mΩ170.9 mΩ0.9 mΩ3.6 mΩ270 mΩ9.38

Small-Outline SMD Reliability Report Page 37

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PRE/POST ELECTRICAL DATA

High Temperature Reverse Bias (HTRB)

5. IRLMS6702 (Sample Size of 35)

Applied Pre Data 1000 hrs Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 8V 17.5 nA 19.3 nA 7.6 nA 5.9 nA -9.9 nA 100 nA 1.42

IGSS-VGS = - 8V -16.8 nA 18.5 nA -7.2 nA 5.3 nA 9.6 nA -100 nA 1.50

BVDSS ID =-250 µA

VGS = 0 V -24.76 V 0.84 V -24.73 V 0.80 V 0.03 V -20 V 1.90

VGS(th) VDS =VGS

ID =-250µA-0.96 V 0.02V -0.96 V 0.02 V 0.00V -0.7 V 3.84

IDSS VDS = -16 V

VGS = 0 V -37.7 nA 29.7 nA -20.5 nA 11.0 nA 17.2 nA -1 µA10.80

RDS(ON) VGS = -4.5 V

ID = -1.6 A 170.1 mΩ1.4 mΩ170.7 mΩ1.6 mΩ0.6 mΩ200 mΩ6.90

6. IRLML2402 (Sample Size of 35)

Applied Pre Data 1000 hrs Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 8V 4.9 nA 5.0 nA 4.7 nA 4.4 nA -0.2 nA 100 nA 6.34

IGSS-VGS = - 8V -6.0 nA 9.4 nA -5.0 nA 3.7 nA 1.0 nA -100 nA 3.34

BVDSS ID =250 µA

VGS = 0 V 27.16 V 0.13 V 27.22 V 0.14 V 0.06 V 20 V 17.89

VGS(th) VDS =VGS

ID = 250 µA1.24 V 0.04V 1.24 V 0.04 V 0.00V 0.7 V 1.4 V 1.49

IDSS VDS = 16 V

VGS = 0 V 38.4 nA 23.2 nA 35.4 nA 18.9 nA -3.0 nA 1 µA13.79

RDS(ON) VGS = 4.5 V

ID = .93 A 188.0 mΩ4.2 mΩ190.8 mΩ4.6 mΩ2.8 mΩ250 mΩ4.96

Note:

1. IGSS+: Gate to Source Forward Leakage Current

2. IGSS-: Gate to Source Reverse Leakage Current

3. BVDSS : Drain to Source Breakdown Voltage

4. VGS(th): Gate to Source Threshold Voltage

5. IDSS : Drain to Source Leakage Current

6. RDS(ON): Drain to Source On Resistance

Small-Outline SMD Reliability Report Page 38

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PRE/POST ELECTRICAL DATA

High Temperature Gate Bias (HTGB)

1. IRF7403 (Sample size of 30)

Applied Pre Data 1000 hrs Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 20V 27.5 nA 4.44 nA 81.5 nA 10.7 nA 54.0 nA 100 nA 5.45

IGSS-VGS = - 20V -0.99 nA 0.79 nA -1.76 nA 1.42 nA -0.77 nA -100 nA 41.69

BVDSS ID = 250 µA

VGS = 0 V 37.01 V 0.48 V 37.17 V 0.47 V 0.16 V 30 V 4.85

VGS(th) VDS = 10 V

ID = 250 µA2.50 V 0.04 V 2.49 V 0.04 V -0.007 V 1.0 V 12.59

IDSS VDS = 24 V

VGS = 0 V 5.4 nA 15.1 nA 10.0 nA 21.2 nA 4.6 nA 1 µA21.89

RDS(ON) VGS = 10 V

ID = 4.0 A 15.9 mΩ0.3 mΩ16.6 mΩ0.5 mΩ0.7 mΩ22 mΩ7.71

2. IRF7404 (Sample Size of 30)

Applied Pre Data 1000 hrs Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 8V 4.9 nA 6.2 nA 1.2 nA 0.8 nA -3.7 nA 100 nA 5.14

IGSS-VGS = - 8V -5.1 nA 6.3 nA -1.4 nA 1.2 nA 3.7 nA -100 nA 5.03

BVDSS ID =-250 µA

VGS = 0 V -25.51 V 1.01 V -25.23 V 0.69 V 0.28 V -20 V 1.82

VGS(th) VDS =VGS

ID =-250 µA-0.85 V 0.03 V -0.85 V 0.03 V 0.00V -0.7 V 1.70

IDSS VDS = -16 V

VGS = 0 V -4.1 nA 6.8 nA -0.4 nA 1.0 nA 3.7 nA -1 µA48.84

RDS(ON) VGS = -4.5 V

ID = -3.2 A 29.5 mΩ0.5 mΩ30.2 mΩ0.7 mΩ0.7 mΩ40 mΩ7.11

Small-Outline SMD Reliability Report Page 39

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PRE/POST ELECTRICAL DATA

High Temperature Gate Bias (HTGB)

3. IRF7504 (Sample Size of 30)

Applied Pre Data 1000 hrs Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 8V 10.8 nA 14.3 nA 3.9 nA 4.4 nA -6.9 nA 100 nA 2.07

IGSS-VGS = - 8V -13.0 nA 15.9 nA -3.6 nA 3.6 nA 9.4 nA -100 nA 1.82

BVDSS ID =-250 µA

VGS = 0 V -25.14 V 0.47 V -25.12 V 0.44 V 0.02 V -20 V 3.65

VGS(th) VDS =VGS

ID =-250 µA-0.96 V 0.02 V -0.97 V 0.02 V -0.01V -0.7 V 4.12

IDSS VDS = -16 V

VGS = 0 V -30.4 nA 32.4 nA -14.0 nA 7.4 nA 16.4 nA -1 µA9.98

RDS(ON) VGS = -4.5 V

ID = -1.2 A 169.3 mΩ3.2 mΩ170.3 mΩ3.2 mΩ1.0 mΩ270 mΩ10.56

4. IRLMS6702 (Sample Size of 35)

Applied Pre Data 1000 hrs Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 8V 18.9 nA 16.6 nA 7.1 nA 6.0 nA -11.8 nA 100 nA 1.63

IGSS-VGS = - 8V -16.9 nA 15.8 nA -7.7 nA 6.6 nA 9.2 nA -100 nA 1.76

BVDSS ID =-250 µA

VGS = 0 V -24.28 V 0.82 V -24.29 V 0.81 V -0.01 V -20 V 1.75

VGS(th) VDS =VGS

ID =-250µA-0.95 V 0.02V -0.96 V 0.02 V -0.01V -0.7 V 5.45

IDSS VDS = -16 V

VGS = 0 V -42.0 nA 26.8 nA -19.0 nA 12.5 nA 23.0 nA -1 µA11.89

RDS(ON) VGS = -4.5 V

ID = -1.6 A 169.7 mΩ1.3 mΩ170.5 mΩ1.9 mΩ0.8 mΩ200 mΩ7.79

Small-Outline SMD Reliability Report Page 40

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WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

PRE/POST ELECTRICAL DATA

High Temperature Gate Bias (HTGB)

5. IRLML2402 (Sample Size of 35)

Applied Pre Data 1000 hrs Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 8V 16.0 nA 15.8 nA 7.2 nA 5.1 nA -8.8 nA 100 nA 1.78

IGSS-VGS = - 8V -20.0 nA 21.5 nA -6.5 nA 6.7 nA 13.5 nA -100 nA 1.24

BVDSS ID =250 µA

VGS = 0 V 27.11 V 0.14 V 27.14 V 0.14 V 0.03 V 20 V 16.94

VGS(th) VDS =VGS

ID = 250 µA1.24 V 0.04V 1.24 V 0.04 V 0.00V 0.7 V 1.4 V 1.42

IDSS VDS = 16 V

VGS = 0 V 45.1 nA 24.7 nA 21.2 nA 12.3 nA -23.9 nA 1 µA12.91

RDS(ON) VGS = 4.5 V

ID = .93 A 187.4 mΩ4.9 mΩ190.2 mΩ5.1 mΩ2.8 mΩ250 mΩ4.25

Note:

1. IGSS+: Gate to Source Forward Leakage Current

2. IGSS-: Gate to Source Reverse Leakage Current

3. BVDSS : Drain to Source Breakdown Voltage

4. VGS(th): Gate to Source Threshold Voltage

5. IDSS : Drain to Source Leakage Current

6. RDS(ON): Drain to Source On Resistance

Small-Outline SMD Reliability Report Page 41

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

PRE/POST ELECTRICAL DATA

Temperature Humidity Bias (THB)

1. IRF7403 (Sample size of 30)

Applied Pre Data 1000 hrs Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 20V 25.9 nA 3.9 nA 47.4 nA 9.0 nA 21.5 nA 100 nA 6.25

IGSS-VGS = - 20V -1.0 nA 0.6 nA -2.2 nA 1.6 nA -1.2 nA -100 nA 54.16

BVDSS ID = 250 µA

VGS = 0 V 37.06 V 0.51 V 37.25 V 0.48 V 0.19 V 30 V 4.59

VGS(th) VDS = 10 V

ID = 250 µA2.51 V 0.04 V 2.49 V 0.04 V -0.02 V 1.0 V 13.66

IDSS VDS = 24 V

VGS = 0 V 7.2 nA 24.7 nA 14.9 nA 40.2 nA 7.7 nA 1 µA13.38

RDS(ON) VGS = 10 V

ID = 4.0 A 16.2 mΩ0.7 mΩ17.0 mΩ1.3 mΩ0.8 mΩ22 mΩ2.66

2. IRF7401 (Sample Size of 30)

Applied Pre Data 1500 hrs Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 8 V 3.9 nA 4.4 nA 1.6 nA 1.4 nA -2.3 nA 100 nA 7.15

IGSS-VGS = - 8V -3.9 nA 3.8 nA -1.5 nA 0.9 nA 2.4 nA -100 nA 8.49

BVDSS ID = 250 µA

VGS = 0 V 25.90 V 0.41 V 26.12 V 0.39 V 0.22 V 20 V 4.81

VGS(th) VDS = VGS

ID = 250 µA1.14 V 0.03V 1.14 V 0.03V 0.00 V 0.7 V 5.19

IDSS VDS = 16 V

VGS = 0 V 60.8 nA 70.9 nA 61.6 nA 87.3 nA 0.8 nA 1 µA4.42

RDS(ON) VGS = 4.5 V

ID = 4.1 A 13.8 mΩ0.5 mΩ14.0 mΩ0.8 mΩ0.2 mΩ22 mΩ5.30

Small-Outline SMD Reliability Report Page 42

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

PRE/POST ELECTRICAL DATA

Temperature Humidity Bias (THB)

3. IRF7404 (Sample Size of 30)

Applied Pre Data 1000 hrs Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 8V 3.2 nA 3.8 nA 1.2 nA 0.8 nA -2.0 nA 100 nA 8.45

IGSS-VGS = - 8V -3.7 nA 3.8 nA -1.6 nA 1.7 nA 2.1 nA -100 nA 8.51

BVDSS ID =-250 µA

VGS = 0 V -25.33 V 0.96 V -25.29 V 0.94V 0.21 V -20 V 1.85

VGS(th) VDS =VGS

ID =-250 µA-0.84 V 0.03 V -0.84 V 0.03 V 0.00V -0.7 V 1.78

IDSS VDS = -16 V

VGS = 0 V -4.2 nA 5.8 nA -0.6 nA 1.1 nA 4.2 nA -1 µA57.14

RDS(ON) VGS = -4.5 V

ID = -3.2 A 29.4 mΩ0.4 mΩ29.5 mΩ0.5 mΩ0.1 mΩ40 mΩ8.15

4. IRF7504 (Sample Size of 30)

Applied Pre Data 1000 hrs Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 8V 20.0 nA 18.2 nA 2.9 nA 4.0 nA -17.1 nA 100 nA 1.47

IGSS-VGS = - 8V -19.8 nA 16.8 nA -3.6 nA 3.6 nA 16.2 nA -100 nA 1.60

BVDSS ID =-250 µA

VGS = 0 V -24.52 V 0.89 V -24.51 V 0.89 V 0.01 V -20 V 1.69

VGS(th) VDS =VGS

ID =-250 µA-0.95 V 0.04 V -0.95 V 0.04 V 0.00V -0.7 V 1.98

IDSS VDS = -16 V

VGS = 0 V -47.0 nA 26.4 nA -240.1 nA 1.7 µA-193.1 nA -1 µA12.04

RDS(ON) VGS = -4.5 V

ID = -1.2 A 171.2 mΩ3.9 mΩ172.1 mΩ3.6 mΩ0.9 mΩ270 mΩ8.42

Small-Outline SMD Reliability Report Page 43

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

PRE/POST ELECTRICAL DATA

Temperature Humidity Bias (THB)

5. IRLMS6702 (Sample Size of 35)

Applied Pre Data 1000 hrs Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 8V 10.7 nA 13.9 nA 7.1 nA 6.0 nA -3.6 nA 100 nA 2.13

IGSS-VGS = - 8V -16.1 nA 17.8 nA -7.7 nA 6.6 nA 8.4 nA -100 nA 1.57

BVDSS ID =-250 µA

VGS = 0 V -24.52 V 0.84 V -24.29 V 0.81 V 0.24 V -20 V 1.80

VGS(th) VDS =VGS

ID =-250µA-0.95 V 0.02V -0.96 V 0.02 V -0.01V -0.7 V 4.87

IDSS VDS = -16 V

VGS = 0 V -27.3 nA 17.2 nA -19.0 nA 12.5 nA 8.3 nA -1 µA18.83

RDS(ON) VGS = -4.5 V

ID = -1.6 A 169.6 mΩ1.4 mΩ170.5 mΩ1.9 mΩ0.9 mΩ200 mΩ7.12

6. IRLML2402 (Sample Size of 35)

Applied Pre Data 1000 hrs Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 8V 16.5 nA 19.3 nA 8.8 nA 6.8 nA -7.7 nA 100 nA 1.44

IGSS-VGS = - 8V -19.8 nA 19.9 nA -7.4 nA 4.9 nA 12.4 nA -100 nA 1.34

BVDSS ID =250 µA

VGS = 0 V 27.20 V 0.11 V 27.37 V 0.14 V 0.17 V 20 V 21.59

VGS(th) VDS =VGS

ID = 250 µA1.25 V 0.03V 1.25 V 0.03 V 0.00V 0.7 V 1.4 V 1.90

IDSS VDS = 16 V

VGS = 0 V 51.5 nA 26.5 nA 36.1 nA 24.8 nA -15.4 nA 1 µA11.93

RDS(ON) VGS = 4.5 V

ID = .93 A 189.3 mΩ4.1 mΩ191.8 mΩ4.1 mΩ2.5 mΩ250 mΩ4.98

Note:

1. IGSS+: Gate to Source Forward Leakage Current

2. IGSS-: Gate to Source Reverse Leakage Current

3. BVDSS : Drain to Source Breakdown Voltage

4. VGS(th): Gate to Source Threshold Voltage

5. IDSS : Drain to Source Leakage Current

6. RDS(ON): Drain to Source On Resistance

Small-Outline SMD Reliability Report Page 44

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

PRE/POST ELECTRICAL DATA

Temperature Cycling (TC)

1. IRF7403 (Sample size of 30)

Applied Pre Data 1000 cycles Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 20V 26.9 nA 5.35 nA 79.3 nA 12.9 nA 52.4 nA 100 nA 4.56

IGSS-VGS = - 20V -0.9 nA 0.8 nA -1.4 nA 1.5 nA -0.5 nA -100 nA 40.60

BVDSS ID = 250 µA

VGS = 0 V 37.27 V 0.46 V 37.36 V 0.46 V 0.09 V 30 V 5.23

VGS(th) VDS = 10 V

ID = 250 µA2.48 V 0.05 V 2.47 V 0.05 V -0.01 V 1.0 V 9.86

IDSS VDS = 24 V

VGS = 0 V 37.5 nA 145.0 nA 44.2 nA 151.8 nA 6.7 nA 1 µA2.21

RDS(ON) VGS = 10 V

ID = 4.0 A 16.1 mΩ0.4 mΩ16.9 mΩ0.9 mΩ0.8 mΩ22 mΩ4.47

2. IRF7401 (Sample Size of 30)

Applied Pre Data 1000 cycles Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 8 V 6.3 nA 4.7 nA 1.0 nA 0.9 nA -5.3 nA 100 nA 6.64

IGSS-VGS = - 8V -5.5 nA 3.8 nA -0.8 nA 0.8 nA 4.7 nA -100 nA 8.22

BVDSS ID = 250 µA

VGS = 0 V 25.99 V 0.61 V 25.98 V 0.61 V -0.01 V 20 V 3.25

VGS(th) VDS = VGS

ID = 250 µA1.13V 0.03V 1.13 V 0.03 V 0.00 V 0.7 V 4.58

IDSS VDS = 16 V

VGS = 0 V 38.9 nA 32.6 nA 46.7 nA 25.5 nA 7.8 nA 1 µA9.83

RDS(ON) VGS = 4.5 V

ID = 4.1 A 14.1 mΩ0.6 mΩ15.6 mΩ1.1 mΩ1.5 mΩ22 mΩ4.44

Small-Outline SMD Reliability Report Page 45

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

PRE/POST ELECTRICAL DATA

Temperature Cycling (TC)

3. IRF7404 (Sample Size of 30)

Applied Pre Data 1000 cycles Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 8V 3.0 nA 3.5 nA 1.1 nA 0.9 nA -2.4 nA 100 nA 9.29

IGSS-VGS = - 8V -3.6 nA 3.5 nA -1.4 nA 1.5 nA 2.2 nA -100 nA 9.12

BVDSS ID =-250 µA

VGS = 0 V -24.64 V 1.25 V -24.59 V 1.18 V 0.05 V -20 V 1.23

VGS(th) VDS =VGS

ID =-250 µA-0.83 V 0.03 V -0.84 V 0.03 V -0.01V -0.7 V 1.79

IDSS VDS = -16 V

VGS = 0 V -4.3 nA 6.4 nA -0.9 nA 2.2 nA 3.5 nA -1 µA51.67

RDS(ON) VGS = -4.5 V

ID = -3.2 A 29.2 mΩ0.5 mΩ31.0 mΩ1.2 mΩ1.8 mΩ40 mΩ7.84

4. IRF7504 (Sample Size of 30)

Applied Pre Data 1000 cycles Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 8V 18.9 nA 17.6 nA 3.5 nA 4.0 nA -15.4 nA 100 nA 1.54

IGSS-VGS = - 8V -17.8 nA 16.6 nA -4.1 nA 3.8 nA 13.4 nA -100 nA 1.65

BVDSS ID =-250 µA

VGS = 0 V -24.36 V 0.81 V -24.34 V 0.81 V 0.02 V -20 V 1.81

VGS(th) VDS =VGS

ID =-250 µA-0.94 V 0.04 V -0.94 V 0.04 V 0.00V -0.7 V 2.09

IDSS VDS = -16 V

VGS = 0 V -40.8 nA 27.7 nA -14.9 nA 6.0 nA -25.9 nA -1 µA11.53

RDS(ON) VGS = -4.5 V

ID = -1.2 A 170.4 mΩ3.5 mΩ172.6 mΩ3.5 mΩ2.2 mΩ270 mΩ9.59

Small-Outline SMD Reliability Report Page 46

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

PRE/POST ELECTRICAL DATA

Temperature Cycling (TC)

5. IRLMS6702 (Sample Size of 35)

Applied Pre Data 1000 cycles Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 8V 19.9 nA 18.4 nA 5.1 nA 4.3 nA -14.8 nA 100 nA 1.45

IGSS-VGS = - 8V -20.5 nA 16.6 nA -4.6 nA 3.8 nA -15.9 nA -100 nA 1.60

BVDSS ID =-250 µA

VGS = 0 V -24.65 V 0.78 V -24.65 V 0.77 V 0.00 V -20 V 2.00

VGS(th) VDS =VGS

ID =-250µA-0.96 V 0.02V -0.96 V 0.02 V 0.00V -0.7 V 4.86

IDSS VDS = -16 V

VGS = 0 V -37.5 nA 25.4 nA -17.5 nA 8.2 nA -20.0 nA -1 µA12.62

RDS(ON) VGS = -4.5 V

ID = -1.6 A 169.2 mΩ1.1 mΩ169.4 mΩ1.1 mΩ0.2 mΩ200 mΩ9.58

6. IRLML2402 (Sample Size of 35)

Applied Pre Data 1000 hrs Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 8V 28.8 nA 19.8 nA 4.3 nA 4.5 nA -24.5 nA 100 nA 1.20

IGSS-VGS = - 8V -26.3 nA 18.0 nA -4.4 nA 4.6 nA -21.9 nA -100 nA 1.36

BVDSS ID =250 µA

VGS = 0 V 27.10 V 0.12 V 27.14 V 0.13 V 0.04 V 20 V 19.75

VGS(th) VDS =VGS

ID = 250 µA1.24 V 0.03V 1.23 V 0.03 V -0.01V 0.7 V 1.4 V 2.23

IDSS VDS = 16 V

VGS = 0 V 50.7 nA 34.5 nA 47.7 nA 28.2 nA -3.0 nA 1 µA9.17

RDS(ON) VGS = 4.5 V

ID = .93 A 186.9 mΩ3.7 mΩ195.7 mΩ7.1 mΩ7.8 mΩ250 mΩ5.64

Note:

1. IGSS+: Gate to Source Forward Leakage Current

2. IGSS-: Gate to Source Reverse Leakage Current

3. BVDSS : Drain to Source Breakdown Voltage

4. VGS(th): Gate to Source Threshold Voltage

5. IDSS : Drain to Source Leakage Current

6. RDS(ON): Drain to Source On Resistance

Small-Outline SMD Reliability Report Page 47

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

SMT Package Qualification Data

Small-Outline SMD Reliability Report Page 48

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

Package Test Result

1) Micro8

Part Lot Date THB Test

85 °C/85% RH & -20V VDSS

Temp Cycling Test

-55 °C to +150 °C

Number Number Code Samples Failures Duration Samples Failures Duration

IRF7604 124510 9511 66 0 500 hrs 66 0 2000 cycs

IRF7604 124511 9512 66 0 500 hrs 66 0 2000 cycs

IRF7604 124560A 9515 66 0 500 hrs 66 0 2000 cycs

2) SO-8

Part Lot Date Autoclave Test

121 °C/15 PSIG Temp Cycling Test

-55 °C to +150 °C

Number Number Code Samples Failures Duration Samples Failures Duration

IRF7413 Group B 9524 30 0 192 hrs 30 0 1000 cycs

IRF7416 9529 30 0 142 hrs 30 0 1000 cycs

IRF7103 702166 9646 33 0 96 hrs 60 0 885 cycs

IRF7103 702009 9645 39 0 96 hrs

IRF7422D2 704618/7E096 752 39 0 96 hrs 39 0 1000 cycs

IRF7422D2 705171/7E109 749 39 0 96 hrs 39 0 1000 cycs

IRF7422D2 704835/7F145 749 39 0 96 hrs 39 0 1000 cys

Part Lot Date THB Test

85 °C/85% RH & rated VDSS

Number Number Code Samples Failures Duration

IRF7103 702166 9646 30 0 1000 hrs

IRF7422D2 704618/7E096 752 39 0 1000 hrs

IRF7422D2 705171/7E109 749 39 0 1000 hrs

IRF7422D2 704835/7F145 749 39 0 1000 hrs

Note:

a). See page 6 for preconditioning procedure.

Small-Outline SMD Reliability Report Page 49

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

PRE/POST ELECTRICAL DATA

Temperature Humidity Bias (THB)

1) Micro8 - IRF7504

Applied Pre Data 500 hours Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 8V 0.63 nA 0.74 nA 6.05 nA 0.61 nA 5.42 nA 100 nA 45.01

IGSS-VGS = - 8V -0.75 nA 1.35 nA -1.75 nA 4.63 nA -1.00 nA -100 nA 24.49

BVDSS ID = 250 µA

VGS = 0 V -28.53 V 0.50V -28.60 V 0.47V -0.07 V -20 V 5.74

VGS(th) VDS = VGS

ID = 250 µA-1.064 V 0.058 V -1.060 V 0.057 V 0.001 V -0.7 V 2.10

IDSS VDS = -16 V

VGS = 0 V -11.7 nA 1.84 nA -22.3 nA 14.0 nA -10.6 nA -1 µA178.65

RDS(ON) VGS = -4.5 V

ID = -2.4 A 73.05 mΩ2.05 mΩ74.37 mΩ2.30 mΩ1.33 mΩ90 mΩ2.76

2) SO-8 - IRF7103 (Sample size of 30)

Applied Pre Data 1000 hours Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 20V 19.0 nA 15.6 nA 5.6 nA 4.5 nA -13.4 nA 100 nA 1.73

IGSS-VGS = - 20V -18.0 nA 18.0 nA -4.6 nA 5.4 nA -13.4 nA -100 nA 1.52

BVDSS ID = 250 µA

VGS = 0 V 62.60 V 0.17 V 62.46 V 0.18 V -0.14 V 55 V 14.90

VGS(th) VDS = VGS

ID = 250 µA1.72 V 0.03 V 1.73 V 0.03 V 0.01 V 1.0 V 8.00

IDSS VDS = 44 V

VGS = 0 V 56.0 nA 27.1 nA 57.4 nA 19.4 nA 1.4 nA 2 µA23.91

RDS(ON) VGS = 10 V

ID = 2.0 A 117.0 mΩ1.7 mΩ117.5 mΩ1.8 mΩ0.5 mΩ130 mΩ2.55

Note:

1. IGSS+: Gate to Source Forward Leakage Current

2. IGSS-: Gate to Source Reverse Leakage Current

3. BVDSS : Drain to Source Breakdown Voltage

4. VGS(th): Gate to Source Threshold Voltage

5. IDSS : Drain to Source Leakage Current

6. RDS(ON): Drain to Source On Resistance

Small-Outline SMD Reliability Report Page 50

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

PRE/POST ELECTRICAL DATA

Temperature Humidity Bias (THB)

3) SO-8 - IRF7422D2 (Sample size of 39)

Applied Pre Data 1000 hrs Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 8V 3.8 nA 3.9 nA 0.0 nA 0.0 nA -3.8 nA 100 nA 8.29

IGSS-VGS = - 8V -3.4 nA 3.6 nA -0.2 nA 0.2 nA 3.2 nA -100 nA 8.85

BVDSS ID = - 250 µA

VGS = 0 V -25.58 V 0.48 V -25.69 V 0.61 V -0.11 V -20 V 3.86

VGS(th) VDS = VGS

ID = -250 µA-0.851 V 0.028 V -0.933 V 0.298 V -0.082V -0.7 V 1.77

IDSS VDS = -16 V

VGS = 0 V -9.1 nA 6.0 nA -8.7 nA 0.7 nA 0.4 nA -1 µA54.88

RDS(ON) VGS = -4.5 V

ID = -2.3 A 66.70 mΩ 0.48mΩ69.54 mΩ 8.10 mΩ2.84mΩ90 mΩ16.15

VFIF = 3.0 A 0.450 V 0.002 V 0.451 V 0.002 V 0.001 V 0.57 V 19.11

IRVR = 20.0 V 13.2 µA 1.9 µA11.9 µA1.5 µA-1.3 µA500 µA85.59

4) SO-8 - IRF7422D2 (Sample size of 39)

Applied Pre Data 1000 hrs Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 8V 3.4 nA 4.0 nA 0.0 nA 0.1 nA -3.4 nA 100 nA 8.03

IGSS-VGS = - 8V -3.9 nA 4.1 nA -0.2 nA 0.3 nA 3.7 nA -100 nA 7.84

BVDSS ID = - 250 µA

VGS = 0 V -26.09 V 0.19 V -26.17 V 0.57 V -0.08 V -20 V 10.88

VGS(th) VDS = VGS

ID = -250 µA -0.919 V 0.017 V -0.921 V 0.018 V -0.002V -0.7 V 4.22

IDSS VDS = -16 V

VGS = 0 V -10.9 nA 6.8 nA -9.7 nA 6.7 nA 1.2 nA -1 µA48.64

RDS(ON) VGS = -4.5 V

ID = -2.3 A 69.26 mΩ 0.59mΩ70.02 mΩ2.55 mΩ0.76mΩ90 mΩ11.67

VFIF = 3.0 A 0.447 V 0.001 V 0.448 V 0.002 V 0.001 V 0.57 V 28.45

IRVR = 20.0 V 12.2 µA1.0 µA13.9 µA12.9 µA1.7 µA500 µA163.30

Small-Outline SMD Reliability Report Page 51

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

PRE/POST ELECTRICAL DATA

Temperature Cycling (TC)

1) Micro8 - IRF7504

Applied Pre Data 2000 cycles Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 8V 0.65 nA 0.28 nA 0.66 nA 0.38 nA -0.01 nA 100 nA 117.76

IGSS-VGS = - 8V -0.66 nA 0.14 nA -0.70 nA 0.21 nA -0.40 nA -100 nA 236.23

BVDSS ID = 250 µA

VGS = 0 V -28.53V 0.47 V -28.51 V 0.36 V 0.02 V -20 V 6.07

VGS(th) VDS = VGS

ID = 250 µA-1.065 V 0.058 V -1.065 V 0.056 V 0.000 V -0.7 V 2.09

IDSS VDS = -16 V

VGS = 0 V -12.9 nA 7.28 nA -11.7 nA 2.85 nA 1.20 nA -1 µA45.22

RDS(ON) VGS = -4.5 V

ID = -2.4 A 73.12 mΩ1.92 mΩ74.52 mΩ2.32 mΩ1.39 mΩ90 mΩ2.93

2) SO-8 - IRF7103 (Sample size of 60)

Applied Pre Data 885 cycles Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 20V 22.4 nA 15.5 nA 10.2 nA 7.5 nA -12.2 nA 100 nA 1.67

IGSS-VGS = - 20V -20.1 nA 18.2 nA -7.7 nA 6.2 nA -12.4 nA -100 nA 1.46

BVDSS ID = 250 µA

VGS = 0 V 62.59 V 0.18 V 62.44 V 0.18 V -0.15 V 55 V 14.06

VGS(th) VDS = VGS

ID = 250 µA1.72 V 0.03 V 1.72 V 0.03 V 0.00 V 1.0 V 8.00

IDSS VDS = 44 V

VGS = 0 V 58.6 nA 30.0 nA 51.8 nA 20.4 nA -6.8 nA 2 µA21.57

RDS(ON) VGS = 10 V

ID = 2.0 A 117.2 mΩ1.8 mΩ115.9 mΩ1.7 mΩ-1.3 mΩ130 mΩ2.37

Small-Outline SMD Reliability Report Page 52

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

PRE/POST ELECTRICAL DATA

Temperature Cycling (TC)

3) SO-8 - IRF7413 (Sample size of 30)

Applied Pre Data 1000 cycles Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 20V 1.1 nA 1.0 nA 1.1 nA 0.7 nA 0.0 nA 100 nA 32.97

IGSS-VGS = - 20V -0.7 nA 0.4 nA -0.6 nA 0.3 nA -0.1 nA -100 nA 82.75

BVDSS ID = 250 µA

VGS = 0 V 40.75 V 0.73 V 40.76 V 0.70 V 0.01V 30 V 4.91

VGS(th) VDS = VGS

ID = 250 µA1.96 V 0.04 V 1.96 V 0.04 V 0.00 V 1.0 V 8.00

IDSS VDS = 24 V

VGS = 0 V 17.1 nA 11.1 nA 65.0 nA 251.0 nA 47.9 nA 1 µA29.52

RDS(ON) VGS = 10 V

ID = 7.3 A 10.4 mΩ0.2 mΩ10.6 mΩ0.3 mΩ0.2 mΩ11 mΩ1.00

4) SO-8 - IRF7416 (Sample size of 30)

Applied Pre Data Post Data Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 20V 2.4 nA 11.0 nA 1.1 nA 0.9 nA -1.3 nA 100 nA 2.96

IGSS-VGS = - 20V -3.5 nA 10.5 nA -1.6 nA 1.1 nA -1.9 nA -100 nA 3.06

BVDSS ID = 250 µA

VGS = 0 V -44.47 V 0.10 V -44.46 V 0.10 V -0.01 V -30 V 48.23

VGS(th) VDS = VGS

ID = 250 µA-1.82 V 0.01 V -1.82 V 0.01 V 0.00 V -1.0 V 27.33

IDSS VDS = -24 V

VGS = 0 V -26.0 nA 40.9 nA -10.9 nA 2.84 nA -15.1 nA -1 µA7.93

RDS(ON) VGS = -10 V

ID = -5.6 A 24.1 mΩ0.1 mΩ24.4 mΩ0.3 mΩ0.3 mΩ20 mΩ

Note:

1. IGSS+: Gate to Source Forward Leakage Current

2. IGSS-: Gate to Source Reverse Leakage Current

3. BVDSS : Drain to Source Breakdown Voltage

4. VGS(th): Gate to Source Threshold Voltage

5. IDSS : Drain to Source Leakage Current

6. RDS(ON): Drain to Source On Resistance

Small-Outline SMD Reliability Report Page 53

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

PRE/POST ELECTRICAL DATA

Temperature Cycling (TC)

5) SO-8 - IRF7422D2 (Sample size of 39)

Applied Pre Data 1000 hrs Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 8V 4.2 nA 4.0 nA 2.0 nA 3.3 nA -2.2 nA 100 nA 7.93

IGSS-VGS = - 8V -3.8 nA 4.1 nA -2.4 nA 3.6 nA 1.4 nA -100 nA 7.83

BVDSS ID = - 250 µA

VGS = 0 V -25.56 V 0.66 V -25.57 V 0.67 V -0.01 V -20 V 2.79

VGS(th) VDS = VGS

ID = -250 µA-0.848 V 0.032 V -0.847 V 0.032 V 0.001 V -0.7 V 1.55

IDSS VDS = -16 V

VGS = 0 V -9.0 nA 0.7 nA -15.7 nA 50.5 nA -6.7 nA -1 µA477.99

RDS(ON) VGS = -4.5 V

ID = -2.3 A 67.75mΩ 0.74mΩ69.62 mΩ1.56 mΩ1.87mΩ90 mΩ10.03

VFIF = 3.0 A 0.448 V 0.002 V 0.450 V 0.003 V 0.002 V 0.57 V 19.81

IRVR = 20.0 V 16.0 µA2.1 µA 16.0 µA 1.7 µA0.0 µA500 µA78.25

6) SO-8 - IRF7422D2 (Sample size of 39)

Applied Pre Data 1000 hrs Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 8V 4.1 nA 4.3 nA 2.5 nA 3.6 nA -1.6 nA 100 nA 7.41

IGSS-VGS = - 8V -4.8 nA 4.8 nA -2.3 nA 3.4 nA 2.5 nA -100 nA 6.64

BVDSS ID = - 250 µA

VGS = 0 V -26.12 V 0.08 V -26.14 V 0.08 V -0.02 V -20 V 26.49

VGS(th) VDS = VGS

ID = -250 µA -0.923 V 0.014 V -0.920 V 0.014 V 0.003 V -0.7 V 5.43

IDSS VDS = -16 V

VGS = 0 V -9.2 nA 6.7 nA -8.0 nA 4.6 nA 1.2 nA -1 µA49.35

RDS(ON) VGS = -4.5 V

ID = -2.3 A 69.39mΩ0.53 mΩ 73.01mΩ2.24 mΩ3.62mΩ90 mΩ12.98

VFIF = 3.0 A 0.446 V 0.002 V 0.449 V 0.002 V 0.003 V 0.57 V 19.53

IRVR = 20.0 V 13.6 µA 2.0 µA16.3 µA 1.3 µA2.7 µA500 µA80.48

Small-Outline SMD Reliability Report Page 54

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

PRE/POST ELECTRICAL DATA

Autoclave Testing

1) SO-8 - IRF7103 (Sample size of 33)

Applied Pre Data 96 hours Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 20V 18.4 nA 7.4 nA 12.6 nA 9.3 nA -5.8 nA 100 nA 3.68

IGSS-VGS = - 20V -5.0 nA 5.2 nA -6.9 nA 9.6 nA 1.9 nA -100 nA 6.09

BVDSS ID = 250 µA

VGS = 0 V 62.96 V 0.23 V 62.89 V 0.23 V -0.07 V 55 V 11.54

VGS(th) VDS = VGS

ID = 250 µA1.65 V 0.03 V 1.66 V 0.02 V 0.01 V 1.0 V 7.22

IDSS VDS = 44 V

VGS = 0 V 53.7 nA 22.5 nA 61.8 nA 26.58 nA 8.1 nA 2 µA28.83

RDS(ON) VGS = 10 V

ID = 2.0 A 116.5 mΩ1.0 mΩ116.3 mΩ1.2 mΩ-0.2 mΩ130 mΩ4.50

2) SO-8 - IRF7103 (Sample size of 39)

Applied Pre Data 96 hours Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 20V 18.4 nA 6.6 nA 16.3 nA 18.9 nA -2.1 nA 100 nA 4.12

IGSS-VGS = - 20V -4.8 nA 5.2 nA -10.0 nA 19.0 nA -5.2 nA -100 nA 6.10

BVDSS ID = 250 µA

VGS = 0 V 63.74 V 0.51 V 63.70 V 0.51 V -0.04 V 55 V 5.71

VGS(th) VDS = VGS

ID = 250 µA1.60 V 0.03 V 1.60 V 0.03 V 0.00 V 1.0 V 6.67

IDSS VDS = 44 V

VGS = 0 V 58.2 nA 23.5 nA 59.3 nA 26.6 nA 0.9 nA 2 µA27.54

RDS(ON) VGS = 10 V

ID = 2.0 A 119.4 mΩ2.9 mΩ119.8 mΩ3.0 mΩ0.4 mΩ130 mΩ1.22

Small-Outline SMD Reliability Report Page 55

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

PRE/POST ELECTRICAL DATA

Autoclave Testing

3) SO-8 - IRF7413 (Sample size of 30)

Applied Pre Data 192 hours Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 20V 1.5 nA 1.3 nA 174.0 nA 520.0 nA 172.5 nA 100 nA 25.26

IGSS-VGS = - 20V -0.6 nA 0.4 nA -258.0 nA 972.0 nA -257.4 nA -100 nA 82.83

BVDSS ID = 250 µA

VGS = 0 V 40.71 V 1.4 V 40.70 V 1.3 V -0.01V 30 V 2.55

VGS(th) VDS = VGS

ID = 250 µA1.94 V 0.05 V 1.95 V 0.05 V 0.01 V 1.0 V 6.27

IDSS VDS = 24 V

VGS = 0 V 14.6 nA 5.2 nA 34.3 nA 24.7 nA 18.7 nA 1 µA63.17

RDS(ON) VGS = 10 V

ID = 7.3 A 10.5 mΩ0.4 mΩ10.7 mΩ0.7 mΩ0.2 mΩ11 mΩ1.25

4) SO-8 - IRF7416 (Sample size of 30)

Applied Pre Data 142 hours Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 20V 0.5 nA 0.3 nA 1.9 µA2.6 µA1.9 µA100 nA 110.56

IGSS-VGS = - 20V -2.1 nA 1.4 nA -2.2 µA-4.2 µA2.2 µA-100 nA 23.31

BVDSS ID = 250 µA

VGS = 0 V -43.79 V 2.49 V -43.76 V 2.48 V -0.03V -30 V 1.85

VGS(th) VDS = VGS

ID = 250 µA-1.82 V 0.01 V -1.82 V 0.01 V 0.00 V -1.0 V 27.33

IDSS VDS = -24 V

VGS = 0 V -18.4 nA 2.7 nA -121.0 nA 64.1 nA 102.6 nA -1 µA121.19

RDS(ON) VGS = -10 V

ID = -5.6 A 24.0 mΩ0.2 mΩ25.0 mΩ0.9 mΩ1.0 mΩ20 mΩ

Note:

1. IGSS+: Gate to Source Forward Leakage Current

2. IGSS-: Gate to Source Reverse Leakage Current

3. BVDSS : Drain to Source Breakdown Voltage

4. VGS(th): Gate to Source Threshold Voltage

5. IDSS : Drain to Source Leakage Current

6. RDS(ON): Drain to Source On Resistance

Small-Outline SMD Reliability Report Page 56

INTERNATIONAL RECTIFIER

WORLD HEADQUARTERS: 233 KANSAS ST. EL SEGUNDO CA. 90245, U.S.A. (310)322-3331, TWX 910-348-6291, TELEX 4720403

EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, ENGLAND TELEPHONE (0883) 713215, TELEX 95219

PRE/POST ELECTRICAL DATA

Autoclave Testing

5) SO-8 - IRF7422D2 (Sample size of 39)

Applied Pre Data 1000 hrs Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 8V 3.9 nA 4.0 nA 5.6 nA 5.1 nA 1.5 nA 100 nA 8.02

IGSS-VGS = - 8V -3.9 nA 4.4 nA -6.0 nA 5.3 nA -2.1 nA -100 nA 7.36

BVDSS ID = - 250 µA

VGS = 0 V -25.53 V 0.52 V -25.56 V 0.53 V -0.03 V -20 V 3.55

VGS(th) VDS = VGS

ID = -250 µA-0.837 V 0.014 V -0.832 V 0.015 V 0.005 V -0.7 V 3.23

IDSS VDS = -16 V

VGS = 0 V -8.6 nA 6.1 nA -19.9 nA 20.9 nA -11.3nA -1 µA54.07

RDS(ON) VGS = -4.5 V

ID = -2.3 A 66.55 mΩ0.46 mΩ67.00 mΩ0.33 mΩ0.45mΩ90 mΩ20.02

VFIF = 3.0 A 0.449 V 0.002 V 0.445 V 0.002 V -0.004V 0.57 V 20.02

IRVR = 20.0 V 14.2 µA2.3 µA17.9 µA2.9 µA3.7 µA500 µA70.60

6) SO-8 - IRF7422D2 (Sample size of 39)

Applied Pre Data 1000 hrs Mean Specification

Symbol Condition Mean σσ Mean σσ Shift Min. Max. CPK

IGSS+VGS = 8V 4.0 nA 3.8 nA 11.7 nA 30.3 nA 7.7 nA 100 nA 8.31

IGSS-VGS = - 8V -3.6 nA 3.7 nA -12.8 nA 31.0 nA -9.2 nA -100 nA 8.59

BVDSS ID = - 250 µA

VGS = 0 V -26.09 V 0.34 V -26.11 V 0.31 V -0.02 V -20 V 5.89

VGS(th) VDS = VGS

ID = -250 µA-0.929 V 0.026 V -0.926 V 0.026 V 0.003 V -0.7 V 35.72

IDSS VDS = -16 V

VGS = 0 V -9.3 nA 9.2 nA -33.2 nA 41.6 nA -23.9nA -1 µA35.72

RDS(ON) VGS = -4.5 V

ID = -2.3 A 69.38 mΩ 0.63mΩ69.79 mΩ 0.62 mΩ0.41mΩ90 mΩ10.90

VFIF = 3.0 A 0.444 V 0.002 V 0.441 V 0.002 V -0.003V 0.57 V 19.57

IRVR = 20.0 V 15.6 µA2.2 µA 19.6 µA3.3 µA4.0 µA500 µA73.65