TO-92 Plastic-Encapsulate Transistors Wi. a $9013 TRANSISTOR(NPN) 146 TO-92 1.EMITTER 2.BASE 2 *iO*C*sT) N -ESS=SEEE } --- 4 - o 4 3.COLLECTOR FEATURES Vierjcso: 40 V T.,Tstg: -55C to + 150C ELECTRICAL CHARACTERISTICS (Tamb=25C unless otherwise specified) and-storage junction temperature range Collector-base breakdown voltage ViBR}CBO Ic= 1001 A, le=0 45 Vv Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1 mA, In=0 25 Vv Emitter-base breakdown voltage Vi(BR)EBO le= 100 n A, Ic=0 5 Vv Collector cut-off current IcBo Vca= 40 V, le=0 0.1 LA Collector cut-off current Iceo Vce= 20 V, {s=0 0.4 LA Emitter cut-off current leso Ves= 5 V, Ic=0 0.1 BA hre(1) Vce= 1 V, Ic= 50 mA 64 300 DC current gain - hee) Vce= 1 V, Ic= 500 mA 40 Collector-emitter saturation voltage VcEsat lc= 500 mA, ls= 50 mA 0.6 Vv Base-emitter saturation voltage VeBEsat Ic= 500 mA, ls= 50 mA 1.2 Vv Base-emitter voltage Vee le= 100mA 1.4 Vv Vce= 6 V, Ic= -20 MA Transition frequency fr 150 MHz f =30MHz Rank D E F G H | Range 64-91 78-112 96-135 112-166 144-202 190-300 Typical Characteristics $9013 ig = 160 VA 1000 = 140 Vee = 1V 5 = 120 & x le = 100 uA z < ee 6 100 " 3S = 80 uA 5 r WwW ty oe \ i = 60 uA mw 2 oO Oo < tp = 40 uA 8 0 2 ls = 20 ua * 41 L 1 10 100 1000 10009 Vee [V], COLLECTOR-EMITTER VOLTAGE Ic [mA], COLLECTOR CURRENT ic nl Static Characteristic DC current Gain Ww 5 < 10000 S 1000 5 fe = 10 le a oO | o Vce = 6V > \ : Zz : i | ; = re : Qa jena rc00 i = a0 mS 2 se s Ve sat / 4 \ S z E i < ay } oO 3 100 7 ~ 5 10 4 w . . 1 > Ave sat & be 3 3 > - s 2 z 10 A = 1 4 10 160 1000 10000 . 1 10 100 4000 0000 ic [mA], COLLECTOR CURRENT Ic [MA], COLLECTOR CURRENT Base-Emitter Saturation Voltage Current Gain Bandwidth Product Collector-Emitter Saturation Voltage 147