Ordering number: EN 2007A | 2S8A1419/28C3649. PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features Adoption of FBET, MBIT processes. . High breakdown voltage and large current capacity - Very small size making it easy to provide high-density hybrid ICs ( ): 2841419 Absolute Maximum Ratings at Ta=25C unit Collector to Base Voltage Vopo (-) 180 V Collector to Emitter Voltage Vopo (=) 160 v Emitter to Base Voltage Veo (=)6 V Collector Current Ip | (-)1.5 A Collector Current(Pulse) lep (-)2.5 A Collector Dissipation Po 500 s oW Mounted on ceramic board (250mmx0. 8mm) 1.5 W Junction Temperature Tj 150% Storage Temperature Tstg =55 to +150 % Electrical Characteristics at Ta=25C min typ max unit Collector Cutoff Current Ippo Von (-) 1200, 1,20 (-)1 pA Emitter Cutoff Current Ippo Veg=(-)4V, 1,20 (-)1 pA DC Current Gain beR(1) Vop=(-)5V,Ip=(-) 100mA 100# 4O0# DrE (2) Voge (-)5V,I9=() 10mA 80 Gain-Bandwidth Product fp Vop=(-) 10V,I,=(-)50mA 120 MHz Output Capacitance Cob Vep=(-) 10V, f=1MHz (22) pF 1 pF C-E Saturation Voltage VoE(sat) Ip=(-)500mA ,I,=(-)50mA (=-200)(-500) mV 130 450 mV B-E Saturation Voltage Vpp(sat) Ip=(-)500mA ,I,=(=-)50mA (=)0.85(-)1.2 V C-B Breakdown Voltage V(BR)CBO I= 10pA,I,=0 (-) 180 Vv C-E Breakdown Voltage V(BR)CEO In=(-) 1mA,R E700 (=) 160 v E-B Breakdown Voltage Vipr)epo te=(~) 10pA,I,=0 (=)6 Vv Continued on next page. *: The 25A1419/2S8C3649 are classified by 100mA hp, as follows: - [100 R 200 7 140 Ss 280 [| 200 T 00} Marking 2S5A1419:AE Package Dimensions 2038 25C03649:CE (unit: mm) _ rid hpp rank :R,5S,T . j | a 0.4 | o Wy = eo 3.0 Oe E: Emitter Wu C: Collector B : Base (Bottom View) "SANYO: PCP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN , | H2TTTA,TS No. 2007-174 : 25A1419/2SC3649 Continued from preceding page. min typ max unit Turn-on Time ton . See specified Test Circuit. (40) ns " HO ns Storage Time tate u (0.7) ys n 1.2 ps Fall Time te 0 (40) ns 8 80 ns Switching Time Test Circuit : Pw us JB we 1%, INPUT -4 soov Unit (Resistance : 1, Capacitance : F) In= l0IB1= 101ps=0. 7A (For PNP, the polarity is reversed.) I - ai" 25A 1415 | -1.6 a H-1.4 3 Bt. be 3 -1.0 5 h-O. me 3-9. a 970.4 3 -0.2 =0 1 - -3 -4 ~ Collector to Emitter Voltage, Ve_ - V Ic - -1.0 ce 25A141F C4 1-90.86 Ko A a B -0.6 ay & & p, ~9-4 o _ Q A -0.2 = d 0+ 5tA oO . 0 =0 0 =10 -20 ~30 -40 -50 Collector to Emitter Voltage, Vap - V : Ic - 1's C BE 2SA1419 | = Vog== Sv iil ' HH] W-1.2 } 3 [ a v be H-0.0 L| 8 oy] bu 6 Oe, 8 Pfs @ i of o -0.4 es f eo 8 y 0 . Oo -0.2 -O.4 0.6 -0.8 1.0, al Z Base to Emitter Voltage, Vpp -_V" Ic - VCE 250 3649 rig - A Collector Current "2 o oa Qo 0 1 2 3 4 5 Collector to Emitter Voltage, Vp - V -Ic - 1.0 C CE 25C 9 = 10. 3, 5m Oo 3. OmA 4 > Sk zo. Soh Oma, 3 Po, 1. S - }. OnA Qo oo. n 0. SmA o oO Ip=0 Collector to Emitter Voltage, Vopr -V ' Ic_- VBE | 2803449 \ Von = 5V id oO 1.2 + : i f Aly 60.8 / I 3 Sf] NFoPfis g IAT a // og y 0 O 0.2 024 0.6 | 0.8.. 1.0.1.2 *. Base to Emitter Voltage, Vpp - V No. 2007-2/4 Collector to Emitter . Saturation Voltage, Yori sat) -~ mv. Base to Emitter __ 25A1419/2SC3649- hfe - Ic 2SA1419 VCR= DC Current Gain,hpp 3 a 10 01 7 "3G ,7 7 4.0 4 = Collector Current,Ip - A ft -Ic 1419 4 2803649 pn ge a 31 2 agc364? | me 2941449 - 100 7 | s 5 ' a A a oO 32 10 (For PNP, minus s is omitted. 9.01 0.1 1.0 Collector Current,I, - A VcE(sat) - IC 28A1419 Ic/ Ip=10 -1000 -160 10 25 pant 56 25 Cx 4 4.0 Collector Current,I ~ A - I 01 VBE(sat 4 25A14 19 Ico/Ip= 10 Saturation Voltage, Var(sar) ~ -0.14 1.0 -0.01 Ps Collector Current,I - A 1000 28C3649 = 5V ny fy a a al "a: o #3100 o u t FS 6 e a 10 0.01 G.T 1.0 Collector Current ,I -A Cob - 100 ab CB 2841419 28034649 ot f fra a ' 2 rm oO 7 S44), v H 2 neon 8 ce 3 MLS & 10 3 | ao 7 a. 3 5 ,\(For PNP, minus sign is omitted.) 1 2 49 #5 7 4 2 3 5 7 40 Collector to Base Voltage, Veg - VCE(sat} - 1 2 Ic/ In=10 3 8 = A I 3 ag 2 ta io Oa = as et os a 100 on =78C, 22 Pa T3807 ' oo ot is ie 3a 25 0.01 0.1 1.0 Collector Current ,I -A VBE(sat} - Ic = o BAP I/Ig=1 Saturation Voltage, Vpp(sat) - Base to Emitter 0.1 1.6 Collector Current ,Ip -A 9.01 No.2007-3/4 - 2$A1419/25C3649 - AS 0 Le oi = 28414197 2803649 i 1 1.6 oO W140 ool 1.4 > a a 812 2 2 & 1.0 a 1. 5 of eo. a & 0.1 3 6.8 2 or PNP, A n6 %. minus sign is omitted, t No he at unted on ceramic board Bos at S1ny & 4(250mm?x0. 8mm) 8 0.01 Ta=25C- One Pulse ae 2 o 6 6 20 40 60 eo 86100 1200140 160 1.0 10 100 Collector to Emitter Voltage, Vop - Ambient Temperature,Ta - C M1 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. @ Anyone purchasing any products described or contained herein for an above-mentioned use shall: @ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such olaim or litigation on SANYO ELECTRIC CO. LTD. its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are Made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.2007=4/4