TGL2201-EPU - TriQuint Semiconductor

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com

Advanced Product Information

March 7, 2003

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process

specifications. Specifications are subject to change without notice.

Wideband Dual Stage VPIN Limiter TGL2201-EPU

Key Features

• 3-25 GHz Passive, High Isolation Limiter

• Low Loss < 0.5 dB , X-band

• Good Return Loss > 15 dB

• Flat Leakage < 18 dBm

• Input Power CW Survivability > 5W

• Integrated DC Block on both input and output

• Chip Dimensions: 1.1 x 1.1 x 0.1 mm

Primary Applications

• Military Radar

• LNA Receiver Chain Protection

Fixtured Measured Performance

-4.0

-3.5

-3.0

-2.5

-2.0

-1.5

-1.0

-0.5

0.0

036912151821242730

Frequency (GHz)

Insertion Loss (dB)

-24

-21

-18

-15

-12

-9

-6

-3

Return Loss (dB)

9 121518212427303336

Input Power (dBm)

Output Power (dBm)

Data taken @ 10 GHz

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com

Advanced Product Information

March 7, 2003

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process

specifications. Specifications are subject to change without notice.

TGL2201-EPU

TABLE III

RF CHARACTERISTICS

(TA = 25 °C)

Limit

Symbol Parameter Test Condition

Min Typ Max

Units

IL Insertion Loss F = 4-20 GHz -- 0.5 1.0 dB

IRL Input Return Loss F = 4-20 GHz 12 -- -- dB

ORL Output Return

Loss

F = 4-20 GHz 12 -- -- dB

PWR Output Power @

Pin = 27 dBm

F = 6.0 GHz

F = 16.0 GHz

dBm

TABLE II

DC CHARACTERISTICS

(TA = 25 °C)

Limit

Symbol Parameter

Min Max

Units

FWD_RES (D1, D2, D3, D4) Resistance Forward 1.9 3.9 Ohm

VREV(D1,D4) Reverse Voltage -60 -30 V

TABLE I

MAXIMUM RATINGS

Symbol Parameter 1/ Value

PIN Input Continuous Wave Power 37 dBm

TMMounting Temperature

(30 Seconds)

320 0C

TSTG Storage Temperature -65 to 150 0C

1/ These ratings represent the maximum operable

values for this device

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com

Advanced Product Information

March 7, 2003

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process

specifications. Specifications are subject to change without notice.

High Isolation Limiter Assembly

TGL2201-EPU

DC Schematic

RF In RF Out

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com

Advanced Product Information

March 7, 2003

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process

specifications. Specifications are subject to change without notice.

Mechanical Drawing

TGL2201-EPU

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should

be observed during handling, assembly and test.

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com

Advanced Product Information

March 7, 2003

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process

specifications. Specifications are subject to change without notice.

TGL2201-EPU

Assembly Process Notes

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should

be observed during handling, assembly and test.

Reflow process assembly notes:

· Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 °C for 30 sec

· An alloy station or conveyor furnace with reducing atmosphere should be used.

· No fluxes should be utilized.

· Coefficient of thermal expansion matching is critical for long-term reliability.

· Devices must be stored in a dry nitrogen atmosphere.

Component placement and adhesive attachment assembly notes:

· Vacuum pencils and/or vacuum collets are the preferred method of pick up.

· Air bridges must be avoided during placement.

· The force impact is critical during auto placement.

· Organic attachment can be used in low-power applications.

· Curing should be done in a convection oven; proper exhaust is a safety concern.

· Microwave or radiant curing should not be used because of differential heating.

· Coefficient of thermal expansion matching is critical.

Interconnect process assembly notes:

· Thermosonic ball bonding is the preferred interconnect technique.

· Force, time, and ultrasonics are critical parameters.

· Aluminum wire should not be used.

· Maximum stage temperature is 200 °C.