VUO62-18NO7 3~ Rectifier Standard Rectifier Module VRRM = 1800 V I DAV = 60 A I FSM = 550 A 3~ Rectifier Bridge Part number VUO62-18NO7 - ~ ~ ~ + Features / Advantages: Applications: Package: PWS-D Package with DCB ceramic Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low leakage current Diode for main rectification For three phase bridge configurations Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Industry standard outline RoHS compliant Easy to mount with two screws Base plate: Copper internally DCB isolated Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130410a VUO62-18NO7 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 1900 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 1800 V IR reverse current VF VR = 1800 V TVJ = 25C 40 A TVJ = 150C 1.5 mA TVJ = 25C 1.07 V 1.30 V 0.96 V 20 A IF = 60 A IF = 20 A IF = 60 A TVJ = 125 C TC = 120C I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 1.27 V T VJ = 150 C 60 A TVJ = 150 C 0.78 V d= for power loss calculation only Ptot typ. VR = 1800 V IF = forward voltage drop min. 8.1 m 1.1 K/W 0.4 K/W TC = 25C 110 W t = 10 ms; (50 Hz), sine TVJ = 45C 550 A t = 8,3 ms; (60 Hz), sine VR = 0 V 595 A t = 10 ms; (50 Hz), sine TVJ = 150 C 470 A A t = 8,3 ms; (60 Hz), sine VR = 0 V 505 t = 10 ms; (50 Hz), sine TVJ = 45C 1.52 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 1.48 kAs TVJ = 150 C 1.11 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C Data according to IEC 60747and per semiconductor unless otherwise specified 1.06 kAs 19 pF 20130410a VUO62-18NO7 Package Ratings PWS-D Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. max. 150 Unit A -40 125 C -40 150 C Weight typ. 159 MD mounting torque MT terminal torque d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute Made in Germany Product Number 4.25 5.75 4.25 5.75 Nm Nm terminal to terminal 9.5 mm terminal to backside 26.0 mm 3000 V 2500 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL 1 mA Circuit Diagram XXXX-XXXX YYCW Lot# Date Code Ordering Standard Part Number VUO62-18NO7 Equivalent Circuits for Simulation I V0 R0 Marking on Product VUO62-18NO7 * on die level Delivery Mode Box Code No. 460486 T VJ = 150 C Rectifier V 0 max threshold voltage 0.78 V R 0 max slope resistance * 6.9 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20130410a VUO62-18NO7 Outlines PWS-D - IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved ~ ~ ~ + Data according to IEC 60747and per semiconductor unless otherwise specified 20130410a VUO62-18NO7 Rectifier 500 100 50 Hz 0.8 x V RRM 10000 VR = 0 V 80 400 60 IF 2 IFSM It TVJ = 45C TVJ = 45C 1000 [A] [A] 40 2 [A s] 300 TVJ = 150C TVJ = 150C TVJ = 125C 150C 20 0 0.4 TVJ = 25C 0.8 1.2 200 0.001 1.6 100 0.010 0.100 Fig. 1 Forward current vs. voltage drop per diode 10 t [ms] 2 Fig. 3 I t vs. time per diode Fig. 2 Surge overload current vs. time per diode 30 100 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 Ptot 1 t [s] VF [V] 20 1.000 DC = 0.6 KW 0.8 KW [W] 1 KW 2 KW 4 KW 8 KW 0.5 0.4 60 0.33 IF(AV)M Graph 1* 10 1 80 0.17 0.08 40 [A] 20 0 0 0 10 20 0 25 50 75 100 125 150 0 175 25 50 TA [C] IdAVM [A] 75 100 125 150 TC [C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 1.2 Constants for ZthJC calculation: 0.8 ZthJC [K/W] 0.4 i Rth (K/W) ti (s) 1 0.05 0.001 2 0.14 0.030 3 0.25 0.060 4 0.35 0.130 5 0.31 0.920 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130410a