CED02N6/CEU02N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1.9A, RDS(ON) = 5 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES TO-252(D-PAK) ABSOLUTE MAXIMUM RATINGS Parameter G D S CED SERIES TO-251(I-PAK) Tc = 25 C unless otherwise noted Symbol Limit 600 Units V VGS 30 V ID 1.9 A Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a S IDM Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C 6 A 43 W 0.34 W/ C Single Pulsed Avalanche Energy d EAS 125 mJ Single Pulsed Avalanche Current d IAR 2 A TJ,Tstg -55 to 150 C Operating and Store Temperature Range Thermal Characteristics Symbol Limit Units Thermal Resistance, Junction-to-Case Parameter RJC 2.9 C/W Thermal Resistance, Junction-to-Ambient RJA 50 C/W 2002.December http://www.cetsemi.com 6-2 CED02N6/CEU02N6 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250A 600 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 600V, VGS = 0V 25 A IGSSF VGS = 30V, VDS = 0V 100 nA IGSSR VGS = -30V, VDS = 0V -100 nA 4 V 5 Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forwand Transconductance Dynamic Characteristics VGS(th) VGS = VDS, ID = 250A 2 RDS(on) VGS = 10V, ID = 1A 3.8 gFS VDS = 50V, ID = 1A 1.2 S 250 pF 50 pF 30 pF c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 300V, ID = 2A, VGS = 10V, RGEN = 18 18 35 ns 18 35 ns 50 90 ns Turn-On Fall Time tf 16 40 ns Total Gate Charge Qg 20 25 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 480V, ID = 2A, VGS = 10V 2 nC 12 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 2A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 60mH, IAS = 2.0A, VDD = 50V, RG = 9.1, Starting TJ = 25 C 6-3 6 A 1.5 V 6 CED02N6/CEU02N6 3.0 2.0 ID, Drain Current (A) ID, Drain Current (A) VGS=10,9,8,7V 2.5 VGS=6V 1.5 1.0 VGS=5V 0.5 TJ=150 C 10 0 -55 C 1.VDS=40V 2.Pulse Test 25 C 0 10 0 2 4 6 8 10 2 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss 300 200 Coss Crss 0 0 5 10 15 20 25 2.2 1.9 ID=1A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) C, Capacitance (pF) 10 Figure 2. Transfer Characteristics 100 VTH, Normalized Gate-Source Threshold Voltage 8 Figure 1. Output Characteristics 400 ID=250A 1.1 1.0 0.9 0.8 0.7 0.6 -50 6 VGS, Gate-to-Source Voltage (V) 500 1.2 4 VDS, Drain-to-Source Voltage (V) 600 1.3 -1 12 10 10 10 -25 0 25 50 75 100 125 1 VGS=0V 0 -1 0.4 150 0.6 0.8 1.0 1.2 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 6-4 15 10 VDS=480V ID=2A 12 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CED02N6/CEU02N6 9 6 3 0 0 6 12 18 100s RDS(ON)Limit 1ms 10 10 10 24 1 0 10ms DC -1 6 TC=25 C TJ=150 C Single Pulse -2 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 0.1 10 -1 PDM 0.05 t1 t2 0.02 1. RJA (t)=r (t) * RJA 2. RJA=See Datasheet 3. TJM-TA = P* RJA (t) 4. Duty Cycle, D=t1/t2 0.01 10 Single Pulse -2 10 -5 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 6-5 10 0 10 1 3