N-Channel Enhancement Mode Field Effect Transistor
CED02N6/CEU02N6
FEATURES
600V, 1.9A, RDS(ON) = 5Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
TO-251 & TO-252 package.
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
PD
IDM
600
0.34
43
6
1.9
±30 V
W
A
A
V
W/ C
6 - 2
S
G
D
CEU SERIES
TO-252(D-PAK) CED SERIES
TO-251(I-PAK)
G
G
S
S
D
D
Lead free product is acquired.
2002.December http://www.cetsemi.com
Operating and Store Temperature Range
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d EAS
TJ,Tstg
IAR -55 to 150
2
125 A
mJ
C
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Parameter Symbol Limit Units
C/W
C/W
50
2.9RθJC
RθJA
CED02N6/CEU02N6
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Forwand Transconductance
Gate Threshold Voltage
Static Drain-Source
On-Resistance
BVDSS
IDSS
IGSSR
IGSSF
5
2 4
-100
100
25
Ω
V
nA
nA
µA
V
S
6 - 3
Gate Body Leakage Current, Reverse
On Characteristics b
Dynamic Characteristics c
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Characteristics c
Turn-On Delay Time
Turn-On Fall Time
Turn-Off Delay Time
Turn-On Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
Test Condition
VGS = 0V, ID = 250µA
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
IS
VSD
Typ Max
600
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID = 1A
VDS = 50V, ID = 1A
VDD = 300V, ID = 2A,
VGS = 10V, RGEN = 18Ω
VDS = 480V, ID = 2A,
VGS = 10V
VDS = 25V, VGS = 0V,
f = 1.0 MHz
VGS = 0V, IS = 2A
250
50
30
18
18
50
16
35
35
90
40
20
2
12
25
6
1.5
1.2
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
3.8
6
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 60mH, IAS = 2.0A, VDD = 50V, RG = 9.1Ω, Starting TJ = 25 C
CED02N6/CEU02N6
6 - 4
C, Capacitance (pF)
ID, Drain Current (A)
ID, Drain Current (A)
VTH, Normalized
Gate-Source Threshold Voltage
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.5
2.0
1.5
1.0
0.5
00 2 4 86 10 12
3.0
VGS=5V
VGS=10,9,8,7V
VGS=6V
100
2 4 6 8
TJ=150 C
-55 C
25 C
10-1
1.VDS=40V
2.Pulse Test
10
Ciss
Coss
Crss
600
500
400
300
200
100
00 5 10 15 20 25
2.2
1.9
1.6
1.3
1.0
0.7
0.4
VGS=10V
ID=1A
-100 -50 0 50 100 150 200
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
-50 -25 0 25 50 75 100 125 150
IS, Source-drain current (A)
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
0.4 0.6 0.8 1.0
100
10-1
101
1.2
VGS=0V
6 - 5
VGS, Gate to Source Voltage (V)
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
ID, Drain Current (A)
15
12
9
6
3
00 6 12 18 24
VDS=480V
ID=2A
CED02N6/CEU02N6
Figure 9. Switching Test Circuit Figure 10. Switching Waveforms
t
V
V
tt
d(on)
OUT
IN
on
r
10%
td(off)
90%
10% 10%
50% 50%
90%
toff
tf
90%
PULSE WIDTH
INVERTED
VDD
R
D
V
VR
S
V
G
GS
IN
GEN
OUT
L
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
PDM
t1t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
100
Single Pulse
0.01
10-1
10-2
100101
10-1
10-2
10-3
10-4
10-5
0.02
0.05
0.1
0.2
D=0.5
101
101
100
10-1
10-2
102
100103
100µs
10ms
1ms
DC
RDS(ON)Limit
Single Pulse
TC=25 C
TJ=150 C
6
