SG5768, SG5770, SG5772, SG5774
SG6506/SG6507/SG6508/SG6509
DESCRIPTION
The Linfinity series of diode arrays feature high breakdown, high speed
diodes in a variety of configurations.
Each array configuration consists of either common anode diodes,
common cathode diodes, or a combination of common anode and
common cathode diodes.
Individual diodes within the array have 60V minimum breakdown
voltage, can handle 500mA of current and typically switch in less than
10 nanoseconds.
Each of the array configurations is available in ceramic DIP or ceramic
flatpack and can be processed to JANTXV, JANTX, or JAN flows at
Linfinity’s MIL-S-19500 facility.
DIODE ARRAY CIRCUITS
FEATURES
••
••
•60V minimum breakdown voltage
••
••
•500mA current capability per diode
••
••
•Fast switching speeds: typically less than
10ns
••
••
•Low leakage current
HIGH RELIABILITY FEATURES
♦♦
♦♦
♦MIL-S-19500/474 QPL - 1N5768 - 1N6506
- 1N5770 - 1N6507
- 1N5772 - 1N6508
- 1N5774 - 1N6509
♦♦
♦♦
♦JANTXV, JANTX & JAN available
♦♦
♦♦
♦LMI level "S" processing available
6/90 Rev 1.1 2/94 LINFINITY Microelectronics Inc.
Copyright 1994 11861 Western Avenue ∞ ∞
∞ ∞
∞ Garden Grove, CA 92841
1(714) 898-8121 ∞∞
∞∞
∞ FAX: (714) 893-2570
CIRCUIT DIAGRAMS
COMMON ANODE / COMMON CATHODE
SG5772/SG6508 DUAL COMMON ANODE / COMMON CATHODE
SG5774/SG6509
COMMON CATHODE
SG5768/SG6506 COMMON ANODE
SG5770/SG6507
DIODE ARRAY SERIES
6/90 Rev 1.1 2/94 LINFINITY Microelectronics Inc.
Copyright 1994 11861 Western Avenue ∞ ∞
∞ ∞
∞ Garden Grove, CA 92841
2(714) 898-8121 ∞∞
∞∞
∞ FAX: (714) 893-2570
ABSOLUTE MAXIMUM RATINGS (Note 1 & 2)
Breakdown Voltage (VBR) ...................................................
Output Current (IO), TC = 25°C
Continuous ................................................................
60V
500mA
Operating Junction Temperature
Hermetic (J, F Packages) ............................................
Storage Temperature Range ............................ 150°C
-65°C to 200°C
Note 1. Exceeding these ratings could cause damage to the device.
Note 2. Applicable for each diode.
J Package:
Thermal Resistance-Junction to Case, θJC.................. 30°C/W
Thermal Resistance-Junction to Ambient, θJA .............. 80°C/W
F Package (10 Pin):
Thermal Resistance-Junction to Case, θJC.................. 80°C/W
Thermal Resistance-Junction to Ambient, θJA ............ 145°C/W
F Package (14 Pin):
Thermal Resistance-Junction to Case, θJC.................. 80°C/W
Thermal Resistance-Junction to Ambient, θJA ............ 140°C/W
THERMAL DATA
Note A. Junction Temperature Calculation: TJ = TA + (PD x θJA).
Note B. The above numbers for θJC are maximums for the limiting
thermal resistance of the package in a standard mount-
ing configuration. The θJA numbers are meant to be
guidelines for the thermal performance of the device/pc-
board system. All of the above assume no ambient
airflow.
Operating Ambient Temperature Range
SG5768 ..........................................................-55°C to 150°C
SG5770 ..........................................................-55°C to 150°C
SG5772 ..........................................................-55°C to 150°C
Operating Ambient Temperature Range
SG5774 ..........................................................-55°C to 150°C
SG6506 ..........................................................-55°C to 150°C
SG6507 ..........................................................-55°C to 150°C
SG6508 ..........................................................-55°C to 150°C
SG6509 ..........................................................-55°C to 150°C
RECOMMENDED OPERATING CONDITIONS (Note 3)
Note 3. Range over which the device is functional.
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, these specifications apply for the operating temperature of TA = 25°C for each diode. Low duty cycle pulse testing techniques
are used which maintains junction and case temperatures equal to the ambient temperature.)
1.0
1.1
1.5
1.0
100
50
4
40
20
V
V
V
V
V
nA
µA
pf
ns
Breakdown Voltage (VBR)
Forward Voltage (VF)
Reverse Current (IR)
Capacitance (C) (Note 4)
Forward Recovery Time (tfr)
(Note 4)
Reverse Recovery Time (trr)
(Note 4)
60
SG5768/SG6506
Test Conditions UnitsParameter
Note 4. The parameters, although guaranteed, are not 100% tested in production.
Min. Typ. Max.
IR = 10µA
Duty Cycle ≤ 2%, 300 µs pulse
IF = 100mA
IF = 200mA
IF = 500mA
IF = 10mA, TA = -55°C
VR = 40V
VR = 40V, TA = 150°C
VR = 0V, f = 1MHz, Pin-to-pin
IF = 500mA, tr ≤ 15ns, Vfr = 1.8V, RS = 50Ω
IF = IR = 200mA, irr = 20mA, RL = 100Ω
DIODE ARRAY SERIES
6/90 Rev 1.1 2/94 LINFINITY Microelectronics Inc.
Copyright 1994 11861 Western Avenue ∞ ∞
∞ ∞
∞ Garden Grove, CA 92841
3(714) 898-8121 ∞∞
∞∞
∞ FAX: (714) 893-2570
ELECTRICAL CHARACTERISTICS (continued)
1.0
1.1
1.5
1.0
100
50
8
40
20
Min. Typ. Max. V
V
V
V
V
nA
µA
pf
ns
ns
7
Breakdown Voltage (VBR)
Forward Voltage (VF)
Reverse Current (I R)
Capacitance (C) (Note 4)
Forward Recovery Time (t fr)
(Note 4)
Reverse Recovery Time (t rr)
(Note 4)
60
SG5770/SG6507
Test Conditions UnitsParameter
1.0
1.1
1.5
1.0
100
50
8
40
20
V
V
V
V
V
nA
µA
pf
ns
ns
7
IR = 10µA, 100ms pulse, ≤ 20% Duty Cycle
Duty Cycle ≤ 2%, 300µs pulse
IF = 100mA
IF = 200mA
IF = 500mA
IF = 10mA, TA = -55°C
VR = 40V
VR = 40V, TA = 150°C
VR = 0V, f = 1MHz, Pin-to-pin
IF = 500mA, tr ≤ 15ns, Vfr = 1.8V, RS = 50Ω
Breakdown Voltage (VBR)
Forward Voltage (VF)
Reverse Current (IR)
Capacitance (C) (Note 4)
Forward Recovery Time (tfr)
(Note 4)
Reverse Recovery Time (trr)
(Note 4)
60
Parameter SG5772/SG6508
SG5774/SG6509
Min. Max.Typ.
Units
Test Conditions
IR = 10µA, 100ms pulse, ≤ 20% Duty Cycle
Duty Cycle ≤ 2%, 300 µs pulse
IF = 100mA
IF = 200mA
IF = 500mA
IF = 10mA, TA = -55°C
VR = 40V
VR = 40V, TA = 150°C
VR = 0V, f = 1MHz, Pin-to-pin
IF = 500mA, tr ≤ 15ns, Vfr = 1.8V, RS = 50Ω
IF = IR = 200mA, irr = 20mA, RL = 100Ω
DIODE ARRAY SERIES
6/90 Rev 1.1 2/94 LINFINITY Microelectronics Inc.
Copyright 1994 11861 Western Avenue ∞ ∞
∞ ∞
∞ Garden Grove, CA 92841
4(714) 898-8121 ∞∞
∞∞
∞ FAX: (714) 893-2570
CONNECTION DIAGRAMS & ORDERING INFORMATION (See Notes Below)
Ambient
Temperature Range
Part No.Package Connection Diagram
14-PIN CERAMIC DIP
J - PACKAGE SG6506J -55°C to 150°C
(1N6506) -55°C to 150°C
SG5768F -55°C to 150°C
(1N5768) -55°C to 150°C
10-PIN CERAMIC FLATPACK
F - PACKAGE
SG6507J -55°C to 150°C
(1N6507) -55°C to 150°C
14-PIN CERAMIC DIP
J - PACKAGE
1
2
3
4
5
6
7
14
13
12
11
10
9
8
1
2
3
4
9
8
56
7
10
1
2
3
4
5
6
7
14
12
9
8
11
10
13
SG5770F -55°C to 150°C
(1N5770) -55°C to 150°C
SG6508J -55°C to 150°C
(1N6508) -55°C to 150°C
14-PIN CERAMIC DIP
J - PACKAGE
SG5772F -55°C to 150°C
(1N5772) -55°C to 150°C1
2
3
4
56
7
8
10
9
1
2
3
4
9
8
56
7
10
1
7
6
5
4
3
2
14
13
8
9
10
11
12
10-PIN CERAMIC FLATPACK
F - PACKAGE
10-PIN CERAMIC FLATPACK
F - PACKAGE
No te 1. Consult factory for other packages available.
2. All packages are viewed from the top.
3. Consult factory for JAN, JAN TX, and JAN TXV product availability.
DIODE ARRAY SERIES
6/90 Rev 1.1 2/94 LINFINITY Microelectronics Inc.
Copyright 1994 11861 Western Avenue ∞ ∞
∞ ∞
∞ Garden Grove, CA 92841
5(714) 898-8121 ∞∞
∞∞
∞ FAX: (714) 893-2570
CONNECTION DIAGRAMS & ORDERING INFORMATION (continued)
Ambient
Temperature Range
Part No.Package Connection Diagram
14-PIN CERAMIC DIP
J - PACKAGE SG6509J -55°C to 150°C
(1N6509) -55°C to 150°C
SG5774F -55°C to 150°C
(1N5774) -55°C to 150°C
14-PIN CERAMIC FLATPACK
F - PACKAGE
8
9
10
11
12
13
14
1
7
6
5
4
3
2
14
8
9
10
1
2
5
4
3
7
6
13
12
11
