PD - 91480B IRF7313 l l l l l HEXFET(R) Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 30V RDS(on) = 0.029 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. SO-8 Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage TA = 25C TA = 70C Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum Power Dissipation TA = 70C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Symbol Maximum VDS V GS 30 20 6.5 5.2 30 2.5 2.0 1.3 82 4.0 0.20 5.8 -55 to + 150 ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Units V A W mJ A mJ V/ ns C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient Symbol Limit Units RJA 62.5 C/W 9/12/02 http://store.iiic.cc/ IRF7313 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 1.0 Typ. 0.022 0.023 0.032 14 22 2.6 6.4 8.1 8.9 26 17 650 320 130 Max. Units Conditions V V GS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.029 V GS = 10V, ID = 5.8A 0.046 V GS = 4.5V, ID = 4.7A V V DS = V GS, ID = 250A S V DS = 15V, ID = 5.8A 1.0 V DS = 24V, VGS = 0V A 25 V DS = 24V, VGS = 0V, TJ = 55C 100 V GS = 20V nA -100 V GS = -20V 33 I D = 5.8A 3.9 nC V DS = 15V 9.6 V GS = 10V, See Fig. 10 12 V DD = 15V 13 I D = 1.0A ns 39 R G = 6.0 26 R D = 15 V GS = 0V pF V DS = 25V = 1.0MHz, See Fig. 9 Source-Drain Ratings and Characteristics IS I SM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units 2.5 30 0.78 45 58 1.0 68 87 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 1.7A, VGS = 0V TJ = 25C, IF = 1.7A di/dt = 100A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 10mH RG = 25, IAS = 4.0A. ISD 4.0A, di/dt 74A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. http://store.iiic.cc/ D S IRF7313 100 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D, Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 3.0V 20s PULSE WIDTH TJ = 25C A 1 0.1 1 10 3.0V 20s PULSE WIDTH TJ = 150C A 1 0.1 10 V DS , Drain-to-Source Voltage (V) 1 10 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics VDS 100 ISD , Reverse Drain Current (A) I D , Drain-to-Source Current (A) 100 TJ = 25C TJ = 150C 10 VDS = 10V 20s PULSE WIDTH 1 3.0 3.5 4.0 A 4.5 TJ = 150C 10 TJ = 25C VGS = 0V 1 5.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics http://store.iiic.cc/ 0.4 0.6 0.8 1.0 1.2 1.4 V SD , Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage A 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 RDS (on) , Drain-to-Source On Resistance () IRF7313 ID = 5.8A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 0.040 0.032 0.028 0.024 E AS , Single Pulse Avalanche Energy (mJ) RDS (on) , Drain-to-Source On Resistance () 20 30 40 Fig 6. Typical On-Resistance Vs. Drain Current 0.10 0.08 0.06 I D = 5.8A 0.04 0.02 0.00 9 10 I D , Drain Current (A) 0.12 6 A 0 Fig 5. Normalized On-Resistance Vs. Temperature 3 V GS = 10V 0.020 80 100 120 140 160 TJ , Junction Temperature ( C) 0 V GS = 4.5V 0.036 12 15 A 200 TOP BOTTOM 160 IIDD 1.8A 3.2A 4.0A 120 80 40 A 0 V GS , Gate-to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage http://store.iiic.cc/ 25 50 75 100 125 Starting T J , Junction Temperature (C) Fig 8. Maximum Avalanche Energy Vs. Drain Current 150 IRF7313 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 900 VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 1200 Ciss Coss 600 Crss 300 0 VDS = 15V 16 12 8 4 A 1 10 ID = 5.8A 0 0 100 10 20 30 40 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient http://store.iiic.cc/ 100 IRF7313 Package Outline SO8 Outline DIM D -B- 5 8 7 5 A 6 5 H E -A- 1 2 3 0.25 (.010) 4 e 6X M A M e1 A -C- 0.10 (.004) 0.25 (.010) L 8X A1 B 8X 6 C 8X M C A S B S MIN MAX .0532 .0688 1.35 1.75 .0040 .0098 0.10 0.25 B .014 .018 0.36 0.46 C .0075 .0098 0.19 0.25 D .189 .196 4.80 4.98 E .150 .157 3.81 3.99 e1 MILLIMETERS MAX A1 e K x 45 INCHES MIN .050 BASIC 1.27 BASIC .025 BASIC 0.635 BASIC H .2284 .2440 K .011 .019 0.28 5.80 0.48 6.20 L 0.16 .050 0.41 1.27 0 8 0 8 RECOMMENDED FOOTPRINT NOTES: 0.72 (.028 ) 8X 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 6.46 ( .255 ) 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS 1.78 (.070) 8X MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). 6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X Part Marking Information SO8 EXAMPLE : THIS IS AN IRF7101 312 INTERNATIONAL RECTIFIER LOGO DATE CODE (YWW) Y = LAST DIGIT OF THE YEAR WW = WEEK XXXX F7101 TOP PART NUMBER http://store.iiic.cc/ WAFER LOT CODE (LAST 4 DIGITS) BOTTOM IRF7313 Tape & Reel Information SO8 Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 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