Advance Product Information September 19, 2005 DC - 20 GHz Discrete power pHEMT TGF2022-06 Key Features and Performance * * * * * * * * Product Description Frequency Range: DC - 20 GHz > 28 dBm Nominal Psat 58% Maximum PAE 36 dBm Nominal OIP3 13 dB Nominal Power Gain Suitable for high reliability applications 0.6mm x 0.35 m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 45-75mA (Under RF Drive, Id rises from 45mA to 150mA) Chip Dimensions: 0.57 x 0.53 x 0.10 mm (0.022 x 0.021 x 0.004 in) * The TriQuint TGF2022-06 is a discrete 0.6 mm pHEMT which operates from DC-20 GHz. The TGF2022-06 is designed using TriQuint's proven standard 0.35um power pHEMT production process. Primary Applications * * * * * The TGF2022-06 typically provides > 28 dBm of saturated output power with power gain of 13 dB. The maximum power added efficiency is 58% which makes the TGF2022-06 appropriate for high efficiency applications. The TGF2022-06 has a protective surface passivation layer providing environmental robustness. 35 30 Maximum Gain (dB) The TGF2022-06 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications. Point-to-point Radio High-reliability space Military Base Stations Broadband Wireless Applications 25 MSG 20 MAG 15 10 5 0 0 Lead-free and RoHS compliant 2 4 6 8 10 12 14 16 Frequency (GHz) Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 1 Advance Product Information September 19, 2005 TGF2022-06 TABLE I MAXIMUM RATINGS Symbol V+ Parameter 1/ Positive Supply Voltage - V Negative Supply Voltage Range + I Notes 12.5 V 2/ -5V to 0V Positive Supply Current 282 mA | IG | Gate Supply Current PIN Input Continuous Wave Power PD Power Dissipation TCH TM TSTG Value 2/ 7 mA 23 dBm 2/ See note 3 2/ 3/ Operating Channel Temperature 150 C 4/ Mounting Temperature (30 Seconds) 320 C -65 to 150 C Storage Temperature 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ 4/ For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (150 C - TBASE C) / 138.0 (C/W) Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TABLE II DC PROBE CHARACTERISTICS (TA = 25 qC, Nominal) Symbol Parameter Minimum Typical Maximum Unit Idss Saturated Drain Current - 180 - mA Gm Transconductance - 225 - mS VP Pinch-off Voltage -1.5 -1 -0.5 V VBGS Breakdown Voltage Gate-Source Breakdown Voltage Gate-Drain -30 - -14 V -30 - -14 V VBGD Note: For TriQuint's 0.35um power pHEMT devices, RF breakdown >> DC breakdown TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 2 Advance Product Information September 19, 2005 TGF2022-06 TABLE III RF CHARACTERIZATION TABLE (TA = 25 C, Nominal) SYMBOL PARAMETER Power Tuned: f = 10 GHz f = 18 GHz UNITS Vd = 10V Idq = 45 mA Vd = 12V Idq = 45 mA Vd = 10V Idq = 45 mA Vd = 12V Idq = 45 mA Psat Saturated Output Power 28.9 29.6 28.1 28.7 dBm PAE Power Added Efficiency 52.4 51.9 41.5 37.0 % Gain Power Gain 12.9 12.9 8.3 8.0 dB Rp 1/ Parallel Resistance 44.63 56.99 43.55 48.44 Cp 1/ Parallel Capacitance 0.276 0.257 0.415 0.432 pF L 2/ Load Reflection coefficient 0.382 120.1 0.400 104.7 0.522 127.7 0.556 125.1 - Psat Saturated Output Power 28.3 29.3 27.5 28.1 dBm PAE Power Added Efficiency 58.3 56.0 46.0 42.5 % Gain Power Gain 13 13 8.5 8.3 dB Rp 1/ Parallel Resistance 72.49 74.22 51.30 66.97 Cp 1/ Parallel Capacitance 0.252 0.255 0.495 0.503 pF L 2/ Load Reflection coefficient Output TOI 0.455 93.7 0.466 93.4 0.680 123.0 - 37 36 36 dBm Efficiency Tuned: OIP3 0.619 127.3 37 1/ Large signal equivalent pHEMT output network 2/ Optimum load impedance for maximum power or maximum PAE at 10 and 18 GHz. The series resistance and inductance (Rd and Ld) shown in the Figure on page 7 is excluded TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 3 Advance Product Information September 19, 2005 TGF2022-06 TABLE IV THERMAL INFORMATION Parameter Test Conditions JC Thermal Resistance (channel to backside of carrier) Vd = 12 V Idq = 45 mA Pdiss = 0.54 W T CH (oC) TJC (qC/W) TM (HRS) 145 138 1.6 E+6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. Measured Fixtured Data IMD3 vs. output power/tone at 10 & 18 GHz 0 18 GHz, Vd=12V, Id=45mA 18 GHz, Vd=10V, Id=45mA 10 GHz, Vd=12V,Id=45mA 10 GHz, Vd=10V, Id=45mA -10 IMD3 (dBc) -20 -30 -40 -50 -60 -70 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Output power/tone (dBm) TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 4 Advance Product Information September 19, 2005 TGF2022-06 Measured Fixtured Data Power tuned data at 10GHz 150 32 Vd = 12V, Id = 45mA Vd = 10V, Id = 45mA 130 26 120 110 22 100 20 90 18 80 16 14 70 12 60 10 50 8 9 10 11 12 13 14 15 16 17 18 19 62 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 Vd = 12V, Id = 45mA Vd = 10V, Id = 45mA 54 50 46 42 38 34 30 26 22 18 14 10 8 20 58 PAE (%) 24 Id (mA) Pout (dBm) 28 140 Gain (dB) 30 9 10 11 12 13 14 15 16 17 18 19 20 Input Power (dBm) Input Power (dBm) For power tuned devices at 10GHz Input matched for maximum gain & output load is: Vd=12V, Idq=45mA: Rp = 57.0 , Cp = 0.257pF, = 0.400, = 104.7 Vd=10V, Idq=75mA: Rp = 44.6 , Cp = 0.276pF, = 0.382, = 120.1 8 9 10 11 12 13 14 15 16 17 18 19 20 Gain (dB) 180 170 160 150 140 130 120 110 100 90 80 70 60 50 Vd = 12V, Id = 45mA Vd = 10V, Id = 45mA 62 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 Vd = 12V, Id = 45mA Vd = 10V, Id = 45mA 58 54 50 46 42 38 34 30 26 22 18 14 10 8 9 10 11 12 13 14 15 16 17 18 19 20 Input Power (dBm) Input Power (dBm) For efficiency tuned devices at 10GHz: Input matched for maximum gain & output load is: Vd=12V, Idq=45mA: Rp = 74.2 , Cp = 0.255pF, = 0.466, = 93.4 Vd=10V, Idq=45mA: Rp = 72.5 , Cp = 0.252pF, = 0.455, = 93.7 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 5 PAE (%) 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 Id (mA) Pout (dBm) Efficiency tuned data at 10GHz Advance Product Information September 19, 2005 TGF2022-06 Measured Fixtured Data Power tuned data at 18GHz 32 30 Vd = 12V, Id = 45mA Vd = 10V, Id = 45mA 26 14 140 13 130 12 110 22 100 20 90 18 80 16 46 Vd = 12V, Id = 45mA Vd = 10V, Id = 45mA 43 40 11 37 10 34 9 31 8 28 7 25 6 22 5 19 4 16 13 14 70 12 60 3 10 50 2 PAE (%) 24 Gain (dB) 120 Id (mA) Pout (dBm) 28 150 10 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Input Power (dBm) Input Power (dBm) For power tuned devices at 18GHz Input matched for maximum gain & output load is: Vd=12V, Idq=45mA: Rp = 48.4 , Cp = 0.432pF, = 0. 556, = 125.1 Vd=10V, Idq=75mA: Rp = 43.5 , Cp = 0.415pF, = 0.522, = 127.7 Efficiency tuned data at 18GHz 30 22 46 120 11 42 110 10 100 20 90 18 80 16 50 12 14 70 12 60 10 50 38 9 34 8 30 7 26 6 5 22 4 18 3 14 2 10 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Input Power (dBm) Input Power (dBm) For efficiency tuned devices at 18GHz: Input matched for maximum gain & output load is: Vd=12V, Idq=45mA: Rp = 67.0 , Cp = 0.503pF, = 0.680, = 123.0 Vd=10V, Idq=45mA: Rp = 51.3 , Cp = 0.495pF, = 0.619, = 127.3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 6 PAE (%) 24 54 Vd = 12V, Id = 45mA Vd = 10V, Id = 45mA 130 Id (mA) Pout (dBm) 26 13 Gain (dB) 28 14 140 Vd = 12V, Id = 45mA Vd = 10V, Id = 45mA Advance Product Information September 19, 2005 TGF2022-06 Linear Model for 0.6 mm Unit pHEMT cell Rdg Lg Rg Cdg Rd Ld Gate Drain Cgs + Rds vi Rgs Ri Cds gm vi - 8QLWS+(07FHOO 5HIHUHQFH3ODQH Rp, Cp Ls Rs Source Gate Drain UPC Source Source L - via = 0.0135 nH (2x) Source UPC = 0.6mm Unit pHEMT Cell MODEL PARAMETER Vd = 8V Idq = 45mA Vd = 8V Idq = 60mA Vd = 8V Idq = 75mA Vd = 10V Idq = 45mA Vd = 10V Idq = 60mA Vd = 12V Idq = 45mA UNITS Rg 0.22 0.23 0.24 0.23 0.24 0.24 Rs 0.40 0.41 0.41 0.46 0.45 0.50 Rd 0.51 0.52 0.52 0.50 0.50 0.48 gm 0.195 0.202 0.202 0.188 0.195 0.183 S Cgs 1.50 1.63 1.70 1.64 1.73 1.71 pF Ri 1.65 1.59 1.58 1.72 1.64 1.73 Cds 0.115 0.115 0.116 0.114 0.115 0.114 pF Rds 243.14 247.08 255.12 278.72 279.31 302.49 Cgd 0.072 0.066 0.063 0.064 0.061 0.060 pF Tau 5.94 6.23 6.51 6.85 6.95 7.36 pS Ls 0.001 0.001 0.001 0.001 0.001 0.001 nH Lg 0.108 0.108 0.108 0.108 0.108 0.108 Ld 0.121 0.120 0.118 0.118 0.118 0.117 Rgs 5110 5140 8310 5110 5420 5120 Rgd 57700 64800 74400 79400 82900 82300 nH nH TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 7 Advance Product Information September 19, 2005 Unmatched S-parameters for 0.6 mm pHEMT TGF2022-06 Bias Conditions: Vd = 12V, Idq = 45mA Frequency s11 s11 ang s21 s21 ang s12 s12 ang s22 s22 ang (GHz) dB deg dB deg dB deg dB deg 0.5 -0.241 -36.34 22.678 159.08 -35.863 70.86 -2.990 -12.01 1 -0.419 -66.76 21.503 141.50 -31.020 55.18 -3.802 -21.21 1.5 -0.587 -89.70 20.058 128.01 -28.948 43.57 -4.700 -27.22 2 -0.712 -106.49 18.609 117.76 -27.903 35.20 -5.480 -31.06 2.5 -0.798 -118.92 17.260 109.77 -27.322 29.07 -6.093 -33.71 3 -0.857 -128.35 16.035 103.28 -26.972 24.45 -6.554 -35.80 3.5 -0.898 -135.70 14.930 97.82 -26.750 20.86 -6.896 -37.68 4 -0.928 -141.60 13.930 93.08 -26.602 17.99 -7.146 -39.51 4.5 -0.949 -146.44 13.022 88.85 -26.501 15.64 -7.327 -41.37 5 -0.964 -150.49 12.193 85.01 -26.430 13.67 -7.457 -43.31 5.5 -0.976 -153.95 11.432 81.46 -26.380 11.99 -7.547 -45.31 6 -0.985 -156.94 10.730 78.12 -26.345 10.54 -7.606 -47.40 6.5 -0.992 -159.58 10.079 74.97 -26.321 9.26 -7.641 -49.54 7 -0.997 -161.92 9.473 71.95 -26.305 8.13 -7.657 -51.75 7.5 -1.001 -164.03 8.905 69.05 -26.295 7.11 -7.657 -54.01 8 -1.004 -165.94 8.373 66.25 -26.290 6.19 -7.643 -56.31 8.5 -1.007 -167.69 7.872 63.52 -26.290 5.35 -7.618 -58.64 9 -1.008 -169.30 7.399 60.86 -26.293 4.59 -7.584 -61.01 9.5 -1.010 -170.80 6.950 58.25 -26.298 3.88 -7.541 -63.39 10 -1.010 -172.20 6.524 55.69 -26.307 3.22 -7.491 -65.79 10.5 -1.011 -173.52 6.119 53.18 -26.317 2.61 -7.435 -68.21 11 -1.011 -174.76 5.733 50.70 -26.328 2.04 -7.373 -70.63 11.5 -1.011 -175.94 5.363 48.25 -26.342 1.51 -7.306 -73.06 12 -1.010 -177.06 5.010 45.84 -26.357 1.01 -7.234 -75.49 12.5 -1.010 -178.13 4.670 43.44 -26.373 0.53 -7.158 -77.92 13 -1.009 -179.15 4.344 41.07 -26.390 0.09 -7.078 -80.35 13.5 -1.008 179.86 4.031 38.72 -26.408 -0.33 -6.995 -82.78 14 -1.007 178.91 3.728 36.39 -26.426 -0.72 -6.909 -85.19 14.5 -1.006 177.99 3.436 34.07 -26.446 -1.10 -6.819 -87.60 15 -1.004 177.10 3.154 31.77 -26.466 -1.45 -6.728 -90.00 15.5 -1.003 176.24 2.881 29.49 -26.486 -1.79 -6.633 -92.39 16 -1.001 175.40 2.616 27.21 -26.507 -2.10 -6.537 -94.76 16.5 -0.999 174.58 2.359 24.95 -26.529 -2.40 -6.439 -97.13 17 -0.998 173.79 2.109 22.70 -26.551 -2.69 -6.339 -99.48 17.5 -0.996 173.01 1.866 20.46 -26.572 -2.95 -6.238 -101.81 18 -0.994 172.24 1.629 18.23 -26.595 -3.21 -6.135 -104.13 18.5 -0.992 171.50 1.398 16.01 -26.617 -3.45 -6.031 -106.44 19 -0.989 170.76 1.173 13.79 -26.639 -3.67 -5.926 -108.72 19.5 -0.987 170.04 0.953 11.58 -26.661 -3.88 -5.820 -111.00 20 -0.985 169.34 0.737 9.38 -26.683 -4.08 -5.713 -113.25 20.5 -0.982 168.64 0.526 7.19 -26.705 -4.27 -5.606 -115.49 21 -0.980 167.96 0.319 5.00 -26.726 -4.45 -5.498 -117.71 21.5 -0.977 167.28 0.115 2.82 -26.748 -4.61 -5.390 -119.91 22 -0.975 166.61 -0.085 0.64 -26.769 -4.77 -5.281 -122.09 22.5 -0.972 165.96 -0.281 -1.53 -26.789 -4.91 -5.173 -124.26 23 -0.970 165.31 -0.475 -3.69 -26.809 -5.04 -5.064 -126.41 23.5 -0.967 164.67 -0.666 -5.85 -26.829 -5.17 -4.956 -128.54 24 -0.964 164.03 -0.854 -8.01 -26.848 -5.29 -4.848 -130.65 24.5 -0.961 163.41 -1.040 -10.16 -26.866 -5.39 -4.740 -132.75 25 -0.958 162.79 -1.224 -12.31 -26.884 -5.49 -4.632 -134.82 25.5 -0.955 162.18 -1.406 -14.45 -26.901 -5.58 -4.525 -136.88 26 -0.952 161.57 -1.586 -16.59 -26.917 -5.67 -4.419 -138.92 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 8 Advance Product Information September 19, 2005 TGF2022-06 Mechanical Drawing >@ >@ >@ >@ 1( >@ >@ >@ >@ 8QLWVPLOOLPHWHUV LQFKHV 7KLFNQHVV &KLSHGJHWRERQGSDGGLPHQVLRQVDUHVKRZQWRFHQWHURIERQGSDG &KLSVL]HWROHUDQFH *1',6%$&.6,'(2)00,& %RQGSDG 9J [ [ %RQGSDG 9G [ [ GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handing, assembly and test. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 9 Advance Product Information September 19, 2005 TGF2022-06 Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 10 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: TriQuint: TGF2022-06