Advance Product Information
September 19, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 1
0
5
10
15
20
25
30
35
0246810121416
Frequency (GHz)
Maximum Gain (dB)
MAG
MSG
DC - 20 GHz Discrete power pHEMT TGF2022-06
Key Features and Perfo rmance
• Frequency Range: DC - 20 GHz
• > 28 dBm Nominal Psat
• 58% Maximum PA E
• 36 dBm Nominal OIP3
• 13 dB Nominal Power Gain
• Suitable for high reliability applications
• 0.6mm x 0.35 m Power pHEMT
• Nominal Bias Vd = 8-12V, Idq = 45-75mA
(Under RF Drive, Id rises from 45mA to 150mA)
• Chip Dimensions: 0.57 x 0.53 x 0.10 mm
(0.022 x 0.021 x 0.004 in)
Primary Applications
• Point-to-point Radio
• High-reliability space
• Military
• Base Station s
• Broadband Wir eles s Applicat ions
Product Description
The TriQuint TGF2022-06 is a d i screte
0.6 mm pHEMT which operates f rom
DC-20 GHz. The TGF2022-06 is
designed using TriQuint’s proven
stan dard 0.35um powe r pHEMT
production process.
The TGF2022-06 typically provides
> 28 dBm of saturated output power with
power gain of 13 dB. The maximum
power added efficiency is 58% which
makes the TGF2022-06 appropriate f or
high eff i ciency applic ations.
The TGF2022-06 is also ideally suited for
Point-to-point Radio, High-reliability
space, and Military applications.
The TGF2022-06 has a protec tive
surface passivation layer providing
environmental robustness.
Lead-free and RoHS compliant
Note: This device is early in th e characte ri zation process prior t o finalizin g all electri cal specifications. Specifications are subj ect to
change without notice.
Advance Product Information
September 19, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 2
TABLE I
MAXIMUM RATINGS
Symbol Parameter 1/ Value Notes
V+Positive Supply Voltage 12.5 V 2/
V-Nega tive Supply Voltage Range -5V to 0V
I+Positive Supply C urrent 282 mA 2/
| IG | Gate Supply Current 7 mA
PIN Input Continuous Wave Power 23 dBm 2/
PDPower Dissipation See note 3 2/ 3/
TCH Operating Channel Temperature 150 °C4/
TMMounting Temperatu re ( 30 Seconds) 320 °C
TSTG Storage Tempera ture -65 to 150 °C
1/ These ratings represent the maximum operable values f or this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall
not exceed PD.
3/ For a median life time of 1E+ 6 hrs, Power dissipation is limited to:
PD(max) = (150 °C – TBASE °C) / 138.0 (°C/W)
4/ Junction operat i ng temperat ure will directly affect the dev ice m edian time t o failure
(TM). For maximum lif e, it is recommended that junction temperatures be maintained
at the lowest possible levels.
TGF2022-06
TABLE II
DC PROBE CHARACTERISTICS
(TA = 25 qC, Nominal)
Symbol Parameter Minimum Typical Maximum Unit
Idss Saturated Drain Current - 180 - mA
Gm Transconductance - 225 - mS
VPPinch-off Voltage -1.5 -1 -0.5 V
VBGS Breakdown Voltage
Gate-Source -30 - -14 V
VBGD Breakdown Voltage
Gate-Drain -30 - -14 V
Note: For TriQuint’s 0.35um power pHEMT devices, RF breakdown >> DC breakdown
Advance Product Information
September 19, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 3
TABLE III
RF CHARACTERIZATION TABLE
(TA = 25 °C, Nominal)
SYMBOL PARAMETER f = 10 GHz f = 18 GHz UNITS
Vd = 10V
Idq = 45 mA Vd = 12V
Idq = 45 mA Vd = 10V
Idq = 45 mA Vd = 12 V
Idq = 45 mA
Pow er Tuned:
Psat
PAE
Gain
Rp 1/
Cp 1/
ΓL 2/
Saturated Ou tp ut Power
Power Added Efficiency
Power Gain
Pa rallel Res istance
Paralle l Capacitance
Load Reflection
coefficient
28.9
52.4
12.9
44.63
0.276
0.382 ∠ 120.1
29.6
51.9
12.9
56.99
0.257
0.400 ∠104.7
28.1
41.5
8.3
43.55
0.415
0.522 ∠127.7
28.7
37.0
8.0
48.44
0.432
0.556 ∠125.1
dBm
%
dB
Ω
pF
-
Efficiency
Tuned:
Psat
PAE
Gain
Rp 1/
Cp 1/
ΓL 2 /
Saturated Ou tp ut Power
Power Added Efficiency
Power Gain
Pa rallel Res istance
Paralle l Capacitance
Load Reflection
coefficient
28.3
58.3
13
72.49
0.252
0.455 ∠93.7
29.3
56.0
13
74.22
0.255
0.466 ∠93.4
27.5
46.0
8.5
51.30
0.495
0.619 ∠127.3
28.1
42.5
8.3
66.97
0.503
0.680 ∠123.0
dBm
%
dB
Ω
pF
-
OIP3 Output TOI 37 36 37 3 6 dBm
TGF2022-06
1/ Large signal equivalent pHEMT output network
2/ Optimum load impedance for maximum power or maximum PAE at 10 and 18 GHz. The series
resistance and inductance (Rd and Ld) shown in the Figure on page 7 is excluded
Advance Product Information
September 19, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 4
Measured Fixtured Data
IMD3 vs. output power/tone at 10 & 18 GHz
TABLE IV
THERMA L INFOR M AT ION
Pa ra m e ter Te st Con d itio ns TCH
(oC) TJC
(qC/W) TM
(HRS)
θJC Therm al Resistan ce
(channel to backside of carrier) Vd = 12 V
Idq = 45 mA
Pdiss = 0.54 W 145 138 1 .6 E+6
Note: As s umes eu tectic a ttach us ing 1.5 m il 80/20 A u Sn m ou nted to a 20 mil CuM o
Carrier a t 70 °C bas eplate tem perature .
TGF2022-06
-70
-60
-50
-40
-30
-20
-10
0
7 8 9 10111213141516171819202122
Output power/ton e (dBm)
IMD3 (dBc)
18 GHz, Vd=12V, Id=45mA
18 GHz, Vd=10V, Id=45mA
10 GHz, Vd=12V,Id=45mA
10 GHz, Vd=10V, Id=45mA
Advance Product Information
September 19, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 5
TGF2022-06
Measured Fixtured Data
Power tuned data at 10GHz
Efficiency tuned data at 10GHz
For power tuned devices at 10GHz
Input matched for maximum gain & output load is:
Vd=12V, Idq=45mA: Rp = 57.0 Ω, Cp = 0.257pF, Γ = 0.400, θ = 104.7°
Vd=10V, Idq=75mA: Rp = 44.6 Ω, Cp = 0.276pF, Γ = 0.382, θ = 120.1°
For efficiency tuned devices at 10GHz:
Input matched for maximum gain & output load is:
Vd=12V, Idq=45mA: Rp = 74.2 Ω, Cp = 0.255pF, Γ = 0.466, θ = 93.4°
Vd=10V, Idq=45mA: Rp = 72.5 Ω, Cp = 0.252pF, Γ = 0.455, θ = 93.7°
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
8 9 10 11 12 13 14 15 16 17 18 19 20
Input Power (dBm)
Gain (dB)
10
14
18
22
26
30
34
38
42
46
50
54
58
62
PAE (%)
Vd = 12V, Id = 45mA
Vd = 10V, Id = 45mA
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
8 9 10 11 12 13 14 15 16 17 18 19 20
Input Power (dBm)
Gain (dB)
10
14
18
22
26
30
34
38
42
46
50
54
58
62
PAE (%)
Vd = 12V, Id = 45mA
Vd = 10V, Id = 45mA
10
12
14
16
18
20
22
24
26
28
30
32
8 9 10 11 12 13 14 15 16 17 18 19 20
Input Pow e r ( dBm )
Pout (dBm)
50
60
70
80
90
100
110
120
130
140
150
Id (mA)
Vd = 12V, Id = 45mA
Vd = 10V, Id = 45mA
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
8 9 10 11 12 13 14 15 16 17 18 19 20
Inpu t Power (dBm)
Pout (dBm )
50
60
70
80
90
100
110
120
130
140
150
160
170
180
Id (mA)
Vd = 12V, Id = 45mA
Vd = 10V, Id = 45mA
Advance Product Information
September 19, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 6
TGF2022-06
Measured Fixtured Data
Power tuned data at 18GHz
Efficiency tuned data at 18GHz
For power tuned devices at 18GHz
Input matched for maximum gain & output load is:
Vd=12V, Idq=45mA: Rp = 48.4 Ω, Cp = 0.432pF, Γ = 0. 556, θ = 125.1°
Vd=10V, Idq=75mA: Rp = 43.5 Ω, Cp = 0.415pF, Γ = 0.522, θ = 127.7°
For efficiency tuned devices at 18GHz:
Input matched for maximum gain & output load is:
Vd=12V, Idq=45mA: Rp = 67.0 Ω, Cp = 0.503pF, Γ = 0.680, θ = 123.0°
Vd=10V, Idq=45mA: Rp = 51.3 Ω, Cp = 0.495pF, Γ = 0.619, θ = 127.3°
2
3
4
5
6
7
8
9
10
11
12
13
14
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Input Power (dBm)
Gain (dB)
10
14
18
22
26
30
34
38
42
46
50
54
PAE (%)
Vd = 12V, Id = 45mA
Vd = 10V, Id = 45mA
10
12
14
16
18
20
22
24
26
28
30
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Input Power (dBm)
Pout (dBm)
50
60
70
80
90
100
110
120
130
140
Id (mA)
Vd = 12V, Id = 45mA
Vd = 10V, Id = 45mA
2
3
4
5
6
7
8
9
10
11
12
13
14
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Input Power (dBm)
Gain (dB)
10
13
16
19
22
25
28
31
34
37
40
43
46
PAE (%)
Vd = 12V, Id = 45mA
Vd = 10V, Id = 45mA
10
12
14
16
18
20
22
24
26
28
30
32
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Input Power (dBm)
Pout (dBm)
50
60
70
80
90
100
110
120
130
140
150
Id (mA)
Vd = 12V, Id = 45mA
Vd = 10V, Id = 45mA
Advance Product Information
September 19, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 7
Drain
Lg Rg Cdg Rd Ld
Rdg
Gate
Rgs
Cgs
Ri
+
v
i
-gm
v
i
Rds Cds
Ls
Rs
Source Source
Rp, Cp
TGF2022-06
Linear Model for 0.6 mm Unit pHEMT cell
MODEL
PARAMETER Vd = 8V
Idq = 45mA Vd = 8V
Idq = 60mA Vd = 8V
Idq = 75mA Vd = 10V
Idq = 45mA Vd = 10V
Idq = 60mA Vd = 12V
Idq = 45mA UNITS
Rg 0.22 0.23 0.24 0.23 0.24 0.24 Ω
Rs 0.40 0.41 0.41 0.46 0.45 0.50 Ω
Rd 0.51 0.52 0.52 0.50 0.50 0.48 Ω
gm 0.195 0.202 0.202 0.188 0.195 0.183 S
Cgs 1.50 1.63 1.70 1.64 1.73 1.71 pF
Ri 1.65 1.59 1.58 1.72 1.64 1.73 Ω
Cds 0.115 0.115 0.116 0.114 0.115 0.114 pF
Rds 243.14 247.08 255.12 278.72 279.31 302.49 Ω
Cgd 0.072 0.066 0.063 0.064 0.061 0.060 pF
Tau 5.94 6.23 6.51 6.85 6.95 7.36 pS
Ls 0.001 0.001 0.001 0.001 0.001 0.001 nH
Lg 0.108 0.108 0.108 0.108 0.108 0.108 nH
Ld 0.121 0.120 0.118 0.118 0.118 0.117 nH
Rgs 5110 5140 8310 5110 5420 5120 Ω
Rgd 57700 64800 74400 79400 82900 82300 Ω
UPC = 0.6mm Unit pHEMT Cell
Gate Source
Source
Drain
UPC L - via = 0.0135 nH (2x)
8QLWS+(07FHOO
5HIHUHQFH3ODQH
Advance Product Information
September 19, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 8
TGF2022-06
Unmatched S-parameters for 0.6 mm pHEMT
Bias Conditions: Vd = 12V, Idq = 45mA
Freq ue nc y s11 s11 ang s21 s21 ang s12 s12 ang s22 s22 ang
(GHz) dB deg dB deg dB deg dB deg
0.5 -0.241 -36.34 22.678 159.08 -35.863 70.86 -2.990 -12.01
1 -0.419 -66.76 21.503 141.50 -31.020 55.18 -3.802 -21.21
1.5 -0.587 -89.70 20.058 128.01 -28.948 43.57 -4.700 -27.22
2 -0.712 -106.49 18.609 117.76 -27.903 35.20 -5.480 -31.06
2.5 -0.798 -118.92 17.260 109.77 -27.322 29.07 -6.093 -33.71
3 -0.857 -128.35 16.035 103.28 -26.972 24.45 -6.554 -35.80
3.5 -0.898 -135.70 14.930 97.82 -26.750 20.86 -6.896 -37.68
4 -0.928 -141.60 13.930 93.08 -26.602 17.99 -7.146 -39.51
4.5 -0.949 -146.44 13.022 88.85 -26.501 15.64 -7.327 -41.37
5 -0.964 -150.49 12.193 85.01 -26.430 13.67 -7.457 -43.31
5.5 -0.976 -153.95 11.432 81.46 -26.380 11.99 -7.547 -45.31
6 -0.985 -156.94 10.730 78.12 -26.345 10.54 -7.606 -47.40
6.5 -0.992 -159.58 10.079 74.97 -26.321 9.26 -7.641 -49.54
7 -0.997 -161.92 9.473 71.95 -26.305 8.13 -7.657 -51.75
7.5 -1.001 -164.03 8.905 69.05 -26.295 7.11 -7.657 -54.01
8 -1.004 -165.94 8.373 66.25 -26.290 6.19 -7.643 -56.31
8.5 -1.007 -167.69 7.872 63.52 -26.290 5.35 -7.618 -58.64
9 -1.008 -169.30 7.399 60.86 -26.293 4.59 -7.584 -61.01
9.5 -1.010 -170.80 6.950 58.25 -26.298 3.88 -7.541 -63.39
10 -1.010 -172.20 6.524 55.69 -26.307 3.22 -7.491 -65.79
10.5 -1.011 -173.52 6.119 53.18 -26.317 2.61 -7.435 -68.21
11 -1.011 -174.76 5.733 50.70 -26.328 2.04 -7.373 -70.63
11.5 -1.011 -175.94 5.363 48.25 -26.342 1.51 -7.306 -73.06
12 -1.010 -177.06 5.010 45.84 -26.357 1.01 -7.234 -75.49
12.5 -1.010 -178.13 4.670 43.44 -26.373 0.53 -7.158 -77.92
13 -1.009 -179.15 4.344 41.07 -26.390 0.09 -7.078 -80.35
13.5 -1.008 179.86 4.031 38.72 -26.408 -0.33 -6.995 -82.78
14 -1.007 178.91 3.728 36.39 -26.426 -0.72 -6.909 -85.19
14.5 -1.006 177.99 3.436 34.07 -26.446 -1.10 -6.819 -87.60
15 -1.004 177.10 3.154 31.77 -26.466 -1.45 -6.728 -90.00
15.5 -1.003 176.24 2.881 29.49 -26.486 -1.79 -6.633 -92.39
16 -1.001 175.40 2.616 27.21 -26.507 -2.10 -6.537 -94.76
16.5 -0.999 174.58 2.359 24.95 -26.529 -2.40 -6.439 -97.13
17 -0.998 173.79 2.109 22.70 -26.551 -2.69 -6.339 -99.48
17.5 -0.996 173.01 1.866 20.46 -26.572 -2.95 -6.238 -101.81
18 -0.994 172.24 1.629 18.23 -26.595 -3.21 -6.135 -104.13
18.5 -0.992 171.50 1.398 16.01 -26.617 -3.45 -6.031 -106.44
19 -0.989 170.76 1.173 13.79 -26.639 -3.67 -5.926 -108.72
19.5 -0.987 170.04 0.953 11.58 -26.661 -3.88 -5.820 -111.00
20 -0.985 169.34 0.737 9.38 -26.683 -4.08 -5.713 -113.25
20.5 -0.982 168.64 0.526 7.19 -26.705 -4.27 -5.606 -115.49
21 -0.980 167.96 0.319 5.00 -26.726 -4.45 -5.498 -117.71
21.5 -0.977 167.28 0.115 2.82 -26.748 -4.61 -5.390 -119.91
22 -0.975 166.61 -0.085 0.64 -26.769 -4.77 -5.281 -122.09
22.5 -0.972 165.96 -0.281 -1.53 -26.789 -4.91 -5.173 -124.26
23 -0.970 165.31 -0.475 -3.69 -26.809 -5.04 -5.064 -126.41
23.5 -0.967 164.67 -0.666 -5.85 -26.829 -5.17 -4.956 -128.54
24 -0.964 164.03 -0.854 -8.01 -26.848 -5.29 -4.848 -130.65
24.5 -0.961 163.41 -1.040 -10.16 -26.866 -5.39 -4.740 -132.75
25 -0.958 162.79 -1.224 -12.31 -26.884 -5.49 -4.632 -134.82
25.5 -0.955 162.18 -1.406 -14.45 -26.901 -5.58 -4.525 -136.88
26 -0.952 161.57 -1.586 -16.59 -26.917 -5.67 -4.419 -138.92
Advance Product Information
September 19, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 9
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during
handing, assembly and test.
Mechanical Drawing TGF2022-06
1(
8QLWVPLOOLPHWHUVLQFKHV
7KLFNQHVV
&KLSHGJHWRERQGSDGGLPHQVLRQVDUHVKRZQWRFHQWHURIERQGSDG
&KLSVL]HWROHUDQFH
*1',6%$&.6,'(2)00,&
%RQGSDG9J[[
%RQGSDG9G[[
>@
>@
>@
>@
>@
>@
>@
>@
Advance Product Information
September 19, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 10
TGF2022-06
Reflow proces s as sembly notes:
• U se Au Sn (80 /20) so lder w ith lim ited exp osu re to temperatures at or a bove 300 °C for 30 sec
• An a lloy station or con veyor furnace with reducing atmosp he re sh ould be us ed.
• No fluxes shou ld be utilized.
• Coe fficient of therm al exp an sion matching is critical for long-term reliability.
• Devices m ust be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachm ent assem bly notes:
• Vacuum pencils and/or vacuum collets are the preferred m ethod of pick up.
• Air bridges must be avoided during placement.
• The force im pact is critical during auto placement.
• Organic attachment can be used in low-power applications.
• Curing sh ou ld be done in a co nvec tion oven ; proper ex haus t is a safety con cern.
• M icrowave o r radiant curing should not be us ed bec aus e of differential heating.
• Coe fficient of thermal exp ans ion matching is critical.
Interconnect process assem bly notes:
• Therm osonic ball bonding is the preferred interconnect technique.
• Force, tim e , and ultrasonics are critical param eters.
• Aluminum wire should not be use d.
• Devices with sm all pad sizes should be bonded with 0.0007-inch wire.
• Maximum stage temperature is 200 °C.
Assembly Process Notes
