BUZ 102 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated * dv/dt rated * Low on-resistance * 175C operating temperature * also in TO-220 SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 102 50 V 42 A 0.023 TO-220 AB C67078-S1351-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 111 C Values Unit A 42 IDpuls Pulsed drain current TC = 25 C 168 EAS Avalanche energy, single pulse mJ ID = 42 A, VDD = 25 V, RGS = 25 L = 102 H, Tj = 25 C 180 Reverse diode dv/dt dv/dt kV/s IS = 42 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C 6 Gate source voltage VGS Power dissipation Ptot TC = 25 C 20 V W 200 Operating temperature Tj -55 ... + 175 Storage temperature Tstg -55 ... + 175 Thermal resistance, chip case RthJC 0.83 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group C 55 / 175 / 56 1 07/96 BUZ 102 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID, Tj = -40 C V 50 - - 2.1 3 4 VDS = 50 V, VGS = 0 V, Tj = 25 C - 0.1 1 A VDS = 50 V, VGS = 0 V, Tj = -40 C - 1 100 nA VDS = 50 V, VGS = 0 V, Tj = 150 C - 10 100 A Gate threshold voltage VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current Gate-source leakage current IDSS IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 RDS(on) VGS = 10 V, ID = 42 A Semiconductor Group nA - 2 0.017 0.023 07/96 BUZ 102 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS 2 * ID * RDS(on)max, ID = 42 A Input capacitance 10 pF - 1620 2160 - 550 825 - 240 360 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 28 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Rise time - 25 38 - 95 140 - 300 400 - 160 215 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Fall time tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Semiconductor Group 3 07/96 BUZ 102 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed - - 168 V 1.2 1.7 trr ns - 75 - Qrr VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 42 - VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge - VSD VGS = 0 V, IF = 84 A Reverse recovery time - ISM TC = 25 C Inverse diode forward voltage A C - 4 0.12 - 07/96 BUZ 102 Drain current ID = (TC) parameter: VGS 10 V Power dissipation Ptot = (TC) 45 220 W Ptot A 180 ID 35 160 30 140 25 120 100 20 80 15 60 10 40 5 20 0 0 0 20 40 60 80 100 120 140 C 0 180 20 40 60 80 100 120 140 TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 180 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 3 10 0 A K/W ID = VD ZthJC t = 30.0s p /ID 10 2 C TC S ) on S( D R 10 -1 100 s 1 ms D = 0.50 0.20 10 1 10 ms 10 -2 0.10 0.05 0.02 DC 0.01 single pulse 10 0 0 10 10 1 V 10 10 -3 -7 10 2 VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 102 Typ. output characteristics ID = (VDS) Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS parameter: tp = 80 s 100 0.070 Ptot = 200Wl A ID kj i a b c d e f h 80 g 0.060 VGS [V] a 4.0 RDS (on) 0.055 b 4.5 70 c 5.0 0.050 5.5 0.045 60 f d e f 6.5 0.040 g 7.0 0.035 h 7.5 i 8.0 d j 9.0 k 10.0 l 20.0 50 e 40 30 6.0 0.030 g 0.025 c 20 j k 0.015 0.010 VGS [V] = b 10 h i 0.020 a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0.005 0.000 0 5.0 a 4.0 4.5 b 5.0 10 c 5.5 20 d 6.0 30 e f 6.5 7.0 40 g 7.5 50 h i j k 8.0 9.0 10.0 20.0 60 VDS 70 A Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max parameter: tp = 80 s, VDS2 x ID x RDS(on)max 60 30 A S 26 50 ID 90 ID gfs 45 24 22 40 20 35 18 16 30 14 25 12 20 10 15 8 6 10 4 5 0 0 2 0 1 2 3 Semiconductor Group 4 5 6 7 8 V 10 VGS 6 0 10 20 30 40 A 60 ID 07/96 BUZ 102 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 42 A, VGS = 10 V 0.065 4.6 V 98% 4.0 0.055 VGS(th) RDS (on) 0.050 3.6 0.045 3.2 0.040 2.8 0.035 typ 2.4 2% 98% 0.030 2.0 0.025 typ 1.6 0.020 1.2 0.015 0.8 0.010 0.4 0.005 0.000 -60 -20 20 60 100 C 0.0 -60 180 -20 20 60 100 C Tj Typ. capacitances 180 Tj Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 10 3 A C IF pF 10 2 Ciss 10 3 10 1 Coss Tj = 25 C typ Tj = 175 C typ Crss Tj = 25 C (98%) Tj = 175 C (98%) 10 2 0 5 10 Semiconductor Group 15 20 25 30 V 40 VDS 7 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 07/96 3.0 BUZ 102 Avalanche energy EAS = (Tj ) parameter: ID = 42 A, VDD = 25 V RGS = 25 , L = 102 H Typ. gate charge VGS = (QGate) parameter: ID puls = 63 A 190 16 mJ V 160 EAS VGS 140 12 120 10 100 0,2 VDS max 8 0,8 VDS max 80 6 60 4 40 2 20 0 20 0 40 60 80 100 120 140 C 180 Tj 0 10 20 30 40 50 60 nC Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 62 V 60 V(BR)DSS 59 58 57 56 55 54 53 52 51 50 49 48 47 -60 -20 20 60 100 C 180 Tj Semiconductor Group 8 07/96 80 BUZ 102 Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96