T1235T-8FP 12 A SnubberlessTM Triac Datasheet - production data Features A2 * Medium current Triac * High static and dynamic commutation G * Three quadrants A1 * ECOPACK(R)2 compliant component * Complies with UL standards (File ref: E81734) Applications G A2 A1 * General purpose AC line load switching * Motor control circuits * Small home appliances TO-220FPAB (T1235T-8FP) * Lighting * Inrush current limiting circuits * Overvoltage crowbar protection Table 1. Device summary Symbol Value Unit IT(rms) 12 A VDRM, VRRM 800 V VDSM, VRSM 900 V IGT 35 mA Description Available in through-hole full pack package, the T1235T-8FP Triac can be used for the on/off or phase angle control function in general purpose AC switching where high commutation capability is required. This device can be used without a snubber circuit when the limits defined in this datasheet are respected. Provides UL certified insulation rated at 2 kV. TM: Snubberless is a trademark of STMicroelectronics January 2015 This is information on a product in full production. DocID024261 Rev 3 1/9 www.st.com 9 Characteristics 1 T1235T-8FP Characteristics Table 2. Absolute ratings (limiting values, Tj = 25 C unless otherwise stated) Symbol IT(rms) ITSM I t Parameter Value Unit A On-state rms current (full sine wave) Tc = 99 C 12 Non repetitive surge peak on-state F = 50 Hz current (full cycle, Tj initial = 25 C) F = 60 Hz t = 20 ms 90 t = 16.7 ms 95 It value for fusing, Tj initial = 25 C tp = 10 ms 54 Tj = 150 C 600 Tj = 125 C 800 A A s VDRM, VRRM Repetitive surge peak off-state voltage VDSM, VRSM Non repetitive surge peak off-state voltage tp = 10 ms 900 V dI/dt Critical rate of rise of on-state current IG = 2 x IGT, tr 100 ns F = 100 Hz 100 A/s IGM Peak gate current Tj = 150 C 4 A Tj = 150 C 1 W - 40 to + 150 - 40 to + 150 C 260 C 2 kV PG(AV) tp = 20 s Average gate power dissipation Tstg Tj Storage junction temperature range Operating junction temperature range TL Maximum lead temperature for soldering during 10 s Vins Insulation rms voltage, 1 minute V Table 3. Electrical characteristics (Tj = 25 C, unless otherwise specified) Symbol Test conditions Quadrant Value Min. 1.75 Max. 35 I - II - III Max. 1.3 V I - II - III Min. 0.2 V Max. 40 mA IGT (1) VD = 12 V, RL = 30 I - II - III VGT VD = 12 V, RL = 30 VGD VD = VDRM, RL = 3.3 k, Tj = 125 C IH (2) IT = 500 mA IL IG = 1.2 IGT mA I - III dV/dt (dI/dt)c II VD = 536 V, gate open Tj = 125 C VD = 402 V, gate open Tj = 150 C Tj = 125 C Tj = 150 C 1. Minimum IGT is guaranteed at 5% of IGT max. 2. For both polarities of A2 referenced to A1 2/9 60 Max. Without snubber (dV/dt)c > 20 V/s) DocID024261 Rev 3 Unit mA 65 2000 V/s 1000 V/s Min. 12 Min. A/ms 6 T1235T-8FP Characteristics Table 4. Static characteristics Symbol Test conditions VT (1) Value Unit ITM = 17 A, tp = 380 s Tj = 25 C Max. 1.55 V Vt0 (1) Threshold voltage Tj = 150 C Max. 0.85 V Rd (1) Dynamic resistance Tj = 150 C Max. 37 m 7.5 A Tj = 25 C VDRM = VRRM = 800 V IDRM IRRM Max. Tj = 125 C VDRM = VRRM = 600 V 1 mA Tj = 150 C Max. 2.7 1. For both polarities of A2 referenced to A1 Table 5. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 3.5 C/W Rth(j-a) Junction to ambient 60 C/W Figure 1. Maximum power dissipation versus on-state rms current (full cycle) 16 Figure 2. On-state rms current versus case temperature (full cycle) P(W) 14 14 IT(RMS)(A) 12 12 10 10 8 8 6 6 4 4 180 2 2 IT(RMS)(A) TC(C) 0 0 0 2 4 6 8 10 12 Figure 3. On-state rms current versus ambient temperature (free air convection) 3.0 IT(RMS)(A) 0 25 50 75 100 125 150 Figure 4. Relative variation of thermal impedance versus pulse duration 1.0E+00 K = [Zth / Rth] 2.5 Zth(j-c) Zth(j-a) 2.0 1.5 1.0E-01 1.0 0.5 Ta(C) tp (s) 0.0 1.0E-02 0 25 50 75 100 125 150 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 DocID024261 Rev 3 3/9 Characteristics T1235T-8FP Figure 5. On-state characteristics (maximum values) Figure 6. Surge peak on-state current versus number of cycles ITM(A) 100 100 ITSM(A) 90 Tjmax: Vt0 = 0.85 V Rd = 37 mW 80 t = 20 ms Non repetitive Tj initial = 25 C 70 60 One cycle 50 10 40 Repetitive Tc = 99 C 30 20 Tj=150 C 10 VTM(V) Tj=25 C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 4.0 Figure 7. Non repetitive surge peak on-state current and corresponding values of I2t 1000 Number of cycles 0 1 10 100 1000 Figure 8. Relative variation of gate trigger current and gate voltage versus junction temperature (typical values) ITSM(A), It (As) 2.0 IGT, VGT [Tj] / IGT, VGT [Tj = 25 C] Tj initial = 25 C IGT Q3 dl/dt limitation: 100 A / s 1.5 IGT Q1 - Q2 ITSM 100 VGT 1.0 It 0.5 10 tp(ms) sinusoidal pulse with width tp<10 ms 0.01 0.10 1.00 -50 10.00 Figure 9. Relative variation of static dV/dt immunity versus junction temperature (typical values) 5 TC(C) 0.0 dV/dt [Tj] / dV/dt [Tj = 150 C] -25 0 25 50 75 100 125 150 Figure 10. Relative variation of holding current and latching current versus junction temperature (typical values) 2.0 IH, IL[Tj] / IH, IL[Tj = 25 C] VD =VR= 402 V 4 1.5 3 1.0 2 IL 0.5 1 IH T j(C) Tj(C) 0.0 0 25 4/9 50 75 100 125 150 -50 DocID024261 Rev 3 -25 0 25 50 75 100 125 150 T1235T-8FP Characteristics Figure 11. Relative variation of critical rate of decrease of main current (dI/dt)c versus reapplied (dV/dt)c 4 (dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c Figure 12. Relative variation of critical rate of decrease of main current (dI/dt)c versus junction temperature (typical values) (dl/dt)c [Tj] / (dl/dt)c [Tj = 150 C] 9 8 7 3 6 5 2 4 3 1 2 1 (dV/dt)c (V/s) Tj(C) 0 0 0.1 1.0 10.0 100.0 25 50 75 100 125 150 Figure 13. Relative variation of leakage current versus junction temperature for different values of blocking voltage (typical values) 1.0E+00 IDRM, IRRM [Tj; VDRM, VRRM] / IDRM, IRRM VDRM = VRRM = 800 V 1.0E-01 VDRM = VRRM = 600 V VDRM = VRRM = 400 V 1.0E-02 [Tj=125 C; 800 V] [Tj=150 C; 600 V] 1.0E-03 Tj(C) 1.0E-04 25 50 75 100 DocID024261 Rev 3 125 150 5/9 Package information 2 T1235T-8FP Package information * Lead-free package * Recommended torque: 0.4 to 0.6 N*m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. Figure 14. TO-220FPAB dimension definitions A B H Dia L6 L2 L7 L3 L5 F1 L4 F2 F G1 G 6/9 D DocID024261 Rev 3 E T1235T-8FP Package information Table 6. TO-220FPAB dimension values Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.018 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.70 0.045 0.067 F2 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 Typ. 0.63 Typ. L3 28.6 30.6 1.126 1.205 L4 9.8 10.6 0.386 0.417 L5 2.9 3.6 0.114 0.142 L6 15.9 16.4 0.626 0.646 L7 9.00 9.30 0.354 0.366 Dia. 3.00 3.20 0.118 0.126 DocID024261 Rev 3 7/9 Ordering information 3 T1235T-8FP Ordering information Figure 15. Ordering information scheme T 12 35 T - 8 FP Triac Current 12 = 12 A Gate sensitivity 35 = 35 mA Specific application T = Increased (dI/dt)c and dV/dt producing reduced ITSM Voltage (VDRM, VRRM) 8 = 800 V Package FP = TO-220FPAB Table 7. Ordering information 4 Order code Marking Package Weight Base qty Delivery mode T1235T-8FP T1235T-8FP TO-220FPAB 2.0 g 50 Tube Revision history Table 8. Document revision history 8/9 Date Revision Changes 27-May-2013 1 Initial release. 12-June-2013 2 Added UL certification information. 14-Jan-2015 3 Updated Features, Table 2 and Table 5. DocID024261 Rev 3 T1235T-8FP IMPORTANT NOTICE - PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST's terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers' products. No license, express or implied, to any intellectual property right is granted by ST herein. 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