© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VCES TC = 25°C to 150°C 1700 V
VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V
VGES Continuous ± 20 V
VGEM Transient ± 30 V
IC25 TC = 25°C 24 A
IC90 TC = 90°C 16 A
ICM TC = 25°C, 1ms 75 A
SSOA VGE = 15V, TVJ = 125°C, RG = 10Ω ICM = 50 A
(RBSOA) Clamped Inductive Load 0.8 • VCES V
tSC TJ = 125°C, VCE = 1200V, VGE = 15V, RG = 22Ω 10 μs
PCTC = 25°C 250 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10 seconds 260 °C
MdMounting Torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
DS99413A(05/09)
IXGH24N170AH1
IXGT24N170AH1
VCES = 1700V
IC25 = 24A
VCE(sat) ≤≤
≤≤
≤ 6.0V
tfi(typ) = 40ns
High Voltage
IGBTs w/Diode
Preliminary Technical Information
G = Gate C = Collector
E = Emitter TAB = Collector
TO-268 (IXGT)
GE
C (TAB)
TO-247 (IXGH)
GCE
C (TAB)
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250μA, VGE = 0V 1700 V
VGE(th) IC = 250μA, VCE = VGE 3.0 5.0 V
ICES VCE = 0.8 • VCES, VGE = 0V 100 μA
TJ = 125°C 1.5 mA
IGES VCE = 0V, VGE = ± 20V ±100 nA
VCE(sat) IC = 16A, VGE = 15V, Note 1 4.5 6.0 V
TJ = 125°C 4.8 V
Features
zOptimized for Low Conduction and
Switching Losses
zAnti-Parallel Ultra Fast Diode
zInternational Standard Packages
Advantages
zHigh Power Density
zLow Gate Drive Requirement
Applications
zPower Inverters
zUPS
zMotor Drives
zSMPS
zPFC Circuits
zWelding Machines
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXGH24N170AH1
IXGT24N170AH1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-247 (IXGH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
TO-268 (IXGT) Outline
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 24A, VCE = 10V, Note 2 13 22 S
Cies 2860 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 198 pF
Cres 58 pF
Qg 140 nC
Qge IC = 16A, VGE = 15V, VCE = 0.5 • VCES 18 nC
Qgc 60 nC
td(on) 21 ns
tri 36 ns
Eon 2.97 mJ
td(off) 336 ns
tfi 40 80 ns
Eoff 0.79 1.50 mJ
td(on) 23 ns
tri 31 ns
Eon 3.60 mJ
td(off) 360 ns
tfi 96 ns
Eoff 1.47 mJ
RthJC 0.50 °C/W
RthCK (TO-247) 0.21 °C/W
Reverse Diode (FRED)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
VFIF = 20A, VGE = 0V 2.5 2.95 V
TJ = 125°C 2.5 V
IRM 15 A
trr 80 ns
IRM TJ = 125°C 20 A
trr 200 ns
RthJC 0.9 °C/W
Inductive Load, TJ = 25°C
IC = 24A, VGE = 15V
VCE = 0.5 • VCES, RG = 10Ω
Note 1
Notes: 1. Switching times may increase for VCE (Clamp) > 0.5 • VCES,
higher TJ or increased RG.
2. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
Inductive Load, TJ = 125°C
IC = 24A, VGE = 15V
VCE = 0.5 • VCES, RG = 10Ω
Note 1
IF = 20A, -diF/dt = 150A/μs,
VR = 1200V, VGE = 0V
© 2009 IXYS CORPORATION, All Rights Reserved
IXGH24N170AH1
IXGT24N170AH1
Fi g. 1. Outpu t C h aracteristics
@ 25 º C
0
4
8
12
16
20
24
28
32
36
40
44
48
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
V
CE
- Volts
I
C
- Amperes
V
GE
= 15
V
13
V
11
V
7V
5V
9V
Fig. 2. Extended Output Characteristics
@ 25 º C
0
20
40
60
80
100
120
140
160
180
0 5 10 15 20 25 30
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
13V
7V
9V
11V
5V
Fig. 3. Ou tput Characteristics
@ 125ºC
0
4
8
12
16
20
24
28
32
36
40
44
48
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
9V
7V
5V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50-25 0 255075100125150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 48A
I
C
= 24A
I
C
= 12A
Fi g . 5. C o l l ecto r -to-Emi tter Vo l t ag e
vs. Gate- to -Emi tter Vo l tag e
2.5
3.5
4.5
5.5
6.5
7.5
8.5
9.5
5 6 7 8 9 101112131415
V
GE
- Volts
V
CE
- Volts
I
C
= 48
A
T
J
= 25ºC
24
A
12
A
Fig. 6. Input Admittan ce
0
5
10
15
20
25
30
35
40
45
50
55
60
3.54.04.55.05.56.06.57.07.58.08.5
V
GE
- Volts
I
C
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXGH24N170AH1
IXGT24N170AH1
IXYS REF: G_24N170(6N)05-07-09
Fig. 7. Transconductance
0
4
8
12
16
20
24
28
32
36
0 10203040506070
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fi g . 10. R ever se- B i as Safe Op erating Area
0
10
20
30
40
50
60
200 400 600 800 1000 1200 1400 1600 1800
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 10Ω
dV / dt < 10V / ns
Fi g . 11. Maxi mu m Tran si en t Ther mal Impedan ce
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 850V
I
C
= 24A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
