Schottky Barrier Diodes High frequency rectifying E-pack (Lead type} . Twin Diodes 1Z FTO-220 Absolute Maximum Ratings / Electrical Characteristics ik: IR oj | tw | ec Outline Type No. Vam | lo | Conditions | IFsm Tstg .| Ti | (max) [Conditions| (max) | (typ) | (max) | (max) | Remarks Te tr Va==Vam (Vv) | {a} | fe) | fal} te} |} fel | (vl | TA) | tml | (pF) | [ns] |fovw] Package | Fig. , /SIZAS4 | 40 1.2 | 49%! | 40 | 40~150; 150 | 0.55 | 1.0 | 65 - 25%2 | x4 SMD is IZ 26-2 _ : | : available p4asc6m. | 60 4 138 60 -40~150; (50 | 0.58 2 2 120 3.3 | #1 82-1 DBSCaM * | (TO-220 4 5 13 50 | 40~150] 150 . 2.5 . | - . |___ AMR 0 6 | 40 0.55 | 2.5 116 3.3 LS 2 ESSCS: 30 Hox' | 90 | 55~150] 150 | 0.45 3.5 190 40 5 ry : 0.55 | 2.5 3.2 150 2 12 SMD is 78-| 60 ga) 89 | ~AQ~ 150) 150 Foes 2.5 130 #1 vailable | FrPaCK | (sp . 30 5 90 90 | 55~125/ 125 | 0.49 | 2.5 6 30 55~150 0.45 | 2.5 3.5 - - 2.0 I ~ ~ 20 5 140 | 80. ao~150] | | 0.55 | 25 2.5 me) - | 23 |*! FTO-220 | 84-| * | 82-1 40 123 0.55 3.5 180 - e a2 \ 49~150 | 150 . = 60 o a0 | 1 | 74 jase} as | 29 | - | 23 8 iTo-2ze0 | 22! *2 82-2 90 in 0.75 3.0 185 * | 82-1 60 10 120 100 | a0~150) 150 | 0.58 5 4.5 200 - 3.3 | 3 82-3 40 10 125 100 | 4o~I50] 150 | 0.55 5 3.5 180 - 3 Lt to-229 | 801 #2 80-2 30 10 97 go | 55~125] 125 | 0.4 4 10 290 - 4 J 78-| 30] 528 [100 | eT agg ots | 5 zo [| a fet SMO IS | pack (sve 40 132 | 100 0.55 5 3.5 210 = 4 m1 ee SMD is 76-| DF1O0SC4mM" | 40 10 125 100 | 40~150 | 150 | 0.55 5 3.5 180 - 3 | el ; STO-220 | smo ae ae : available ($M SFI0SC3L.| 30 | 139 s5~150| 150 | 0.45 | 4 5 310 x! Bae | Se Be. 13] AR 40 10 13) 150 | ag aso] iso 0.58 5 3.5 180 FL 2.3 | *2 FTO-220 | 84-2 _6 | 60 129 0.58 , 4.5 260 | Ba | 2 9 90 120 0.75 | 3.0 185 ~$isscam | 40 15 135 170 | 40~150] 150 | 0.55 | 7.5 5 340 125 1.2 | Il MTO-3P | 86-1 DI5SSCA4M 40 15 117 isa | 40~150] 150 | 0.55 | 7.5 5 340 - 2.8 | 1 ITO-220 | 82-1 ST5SCA4M 40 15 129 150 | 40~150] 150 | 0.55 | 7.5 5 340 - 1.7 | el To-220 | 80-1 SMD is 76-1 OF 18SC4M | 40 15 129 : 150 | ~40~150] (50 | 0.55 | 7.5 5 340 ~ 1.7 | O iable | 210-220 (smo D20SCOM 90 20 itl: 200 | 40~150] 150 | 0.75 10 10 370 | * | ITO-3P | 88-1 s$z0s64m...| 40 129 170 0.55 | 7.5 5 340 1.2 - OM. | 90 20 125 | 20g) 29 ~ 190) 180 5 10 10 370 - I * MTO-3P | 86-| OF 20SC4M 40 20 122 | 230 'ao~150 150 | 0.55 10 7.5 390 17 |) SMD is | S55 599 | 78! OF 20PC3M 30 20. | 105*' | 200 s5~125| 125 | 0.4 8 35 560 - 1.6 available x? _ SF208C4, 40 20 U7 230 | 55~150| (50 | 0.55 io [| 7.5 390 2.0 | 1 | FTO-220 | 84-1 D25SC6M * | ' 88-| eS 2 7 40~150) | 58 | 12.5 10 4g - 1.5 TO-3P_ = |}-__ SMR 60 5 " 300 40 50 | 0.5 | 0 "2 TO-3 382 $25SC6M 60 25 128 | 300 | ao~!50] 150 | 0.58 | 12.5 10 490 | * | MTO-3P | 86-1 - i = 76-1 , DF25SC6M 60 25 15 | 300 | ao~150] 150 | 0.58 | 12.5 10 490 - 1.6 (#1 SMD Is | oto.220 | Sao - available ( Fa-1 D30SC4M _ 40 30 112 | 300 | ao~150] 150 | 0.55 15 10 590 ~ 1.6 | I ITO-3P_ | 88-1 $30SC4M 40 30 126 | 300 | ao~150| 150 | 0.55 15 10-590 150 \ * | MTO-3P | 86-1 * | Under development * | | Center-tap pHs %* 2: Center-tap (R) apy * 3! Doubler type oy] *4: o-+- ohKde *1 2 Ta #2. Ol