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c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.A
High-speed Switching Transistor (-60V, -5A)
2SA1952
Features Dimensions (Unit : mm)
1) High speed switching. (tf : Typ. 0.15 s at IC = -3A)
2) Low VCE(sat). (Typ. -0.2V at IC/IB= -3/-0.15A)
3) Wide SOA. (safe operating area)
4) Complements the 2SC5103.
Absolute maximum ratings (Ta = 25C)
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
−100
−60
−5
−5
150
−55~+150
Unit
V
V
V
A
−10
1
10
A(Pulse)
W
W(Tc=25°C)
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power dissipation
Packaging specifications and hFE
Type 2SA1952
CPT3
Q
2500
TL
Package
h
FE
Code
Basic ordering unit (pieces)
Electrical characteristics (Ta = 25C)
Min. Typ. Max. Unit Conditions
BV
EBO
I
CBO
I
EBO
V
CE(sat)
f
T
Cob
−5
−
−
−
120
−
−
−
−
−
−
−
−
80
130
−
−
−10
−10
−0.3
270
−
−
V
V
μA
μA
V
−
MHz
pF
I
C
=
−50μA
BV
CEO
−60 −−VI
C
=
−1mA
I
E
=
−50μA
V
CB
=
−100V
V
EB
=
−5V
I
C
/I
B
=
−3A/ −0.15A
−−
−0.5 VI
C
/I
B
=
−4A/ −0.2A
V
BE(sat)
−−
−1.5 VI
C
/I
B
=
−4A /−0.2A
−−
−1.2 VI
C
/I
B
=
−3A/ −0.15A
h
FE1
h
FE2
V
CE
=
−2V , I
C
=
−1A
40 −− −
V
CE
=
−2V , I
C
=
−3A
V
CE
=
−10V , I
E
=
0.5A , f
=
30MHz
V
CB
=
−10V , I
E
=
0A , f
=
1MHz
ton −−0.3 μsI
C
=
−3A , R
L
=
10Ω
tstg −−1.5 μsI
B1
=
−I
B2
=
−0.15A
tf −−0.3 μsV
CC
−30V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Collector-base breakdown voltage
Parameter BV
CBO
Symbol
−100
2SA1952
(3) Emitter(Source)
(2) Collector(Drain)
(1) Base(Gate)
ROHM : CPT3
EIAJ : SC-63
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
(2)
(3)
C0.5
0.65
0.9
(1)
0.75
2.3
0.9
1.55.5
5.1
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c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.A
Data Sheet 2SA1952
Electrical characteristics curves
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Ground emitter output characteristi
cs
0
−5
−4
−3
−2
−1
−5−4−3−2−10
Tc
=
25
°C
I
B
=0A
−10mA
−20mA
−30mA
−40mA
−50mA
−60mA
−70mA
−100mA
−80m
A
−90m
A
BASE TO EMITTER VOLTAGE : VBE
(V)
COLLECTOR CURRENT : IC (A)
F
ig.2
Ground emitter propagation characteristi
cs
−10
−2
−1
−0.5
−0.2
−0.1
−0.01
−0.02
−0.05
−5
−1.8−1.6−1.4−1.2−1.0−0.8−0.6−0.4−0.20
Ta
=
100
°C
25
°C
−
25
°C
V
CE
=
−2V
Pulsed
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
EF
Fig.3 DC current gain vs. collector curre
nt
20
50
100
200
500
1000
10
5
2
1
−1
0
−2−1−0.2−0.1
−0.01 −0.02 −0.05
−0.5 −5
Pulsed
V
CE
=
−2V
Ta
=100°C
25°C
−25°C
COLLECTOR CURRENT : IC
(A)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V
)
BASE SATURATION VOLTAGE
: V
BE(sat)
(V
)
Fig.4
Collector-emitter saturation voltage
Base-emitter saturation voltage
vs. collector curre
nt
−10−2−1−0.2−0.1
−0.01
−0.01
−0.02
−0.05
−0.1
−0.2
−0.5
−1
−2
−5
−10
−0.02 −0.05
−0.5 −5
Pulsed
IC/IB=20
Ta
= −25°C
Ta
=100°C
25°C
25°C
−25°C
100°CVBE(sat)
VCE(sat)
EMITTER CURRENT : I
E
(A)
TRANSITION FREQUENCY: f
T
(MHz)
Fig.5 Resistance ratio vs. emitter curre
nt
20
50
100
200
500
1000
10
5
2
1
0.001 0.002 0.01 0.02 0.05 0.1 0.2 0.5
1
0.005
Ta
=
25
°C
V
CE
= −10
A
COLLECTOR TO BASE VOLTAGE : V
CB (V)
COLLECTOR OUTPUT CAPACITANCE : C
ob
(pF)
Fig.6 Collector output capacitance
vs. collector-base voltage
200
500
1000
2000
5000
10000
100
50
20
10
−0.1 −0.2 −0.5 −1−2−5−10 −20 −50 −10
0
Ta
=
25
°C
f
=1MHz
I
E
=0
A
COLLECTOR CURRENT : I
C
(A)
TURN ON TIME : t
on(μs)
STRAGE TIME
: t
stg(μs)
FALL TIME
: t
f(μs)
Fig.7 Switching characteristics
0.2
0.5
1
2
5
10
0.1
0.05
0.02
0.01
−0.05 −0.2−0.1 −0.5 −1−2−5−10 −20 −5
0
I
E
=20
I
B1
= −20
I
B2
t
stg
t
on
t
f
R0039
A
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