Document Number: 86048 For technical questions within your region, please contact one of the following: www.vishay.com
Rev. 1.7, 30-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Fast Avalanche Sinterglass Diode
BYW32, BYW33, BYW34, BYW35, BYW36
Vishay Semiconductors
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
APPLICATIONS
• Fast rectification an switching diode for example for
TV-line output circuits and switch mode power supply
949539
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BYW32 VR = 200 V; IFAV = 2 A SOD-57
BYW33 VR = 300 V; IFAV = 2 A SOD-57
BYW34 VR = 400 V; IFAV = 2 A SOD-57
BYW35 VR = 500 V; IFAV = 2 A SOD-57
BYW36 VR = 600 V; IFAV = 2 A SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive peak
reverse voltage See electrical characteristics
BYW32 VR = VRRM 200 V
BYW33 VR = VRRM 300 V
BYW34 VR = VRRM 400 V
BYW35 VR = VRRM 500 V
BYW36 VR = VRRM 600 V
Peak forward surge current tp = 10 ms, half sine wave IFSM 50 A
Repetitive peak forward current IFRM 12 A
Average forward current ϕ = 180° IFAV 2A
Non repetitive reverse avalanche
energy I(BR)R = 0.4 A ER10 mJ
Junction and storage temperature
range Tj = Tstg - 55 to + 175 °C
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient Lead length l = 10 mm, TL = constant RthJA 45 K/W
On PC board with spacing 25 mm RthJA 100 K/W
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 86048
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.7, 30-Jul-10
BYW32, BYW33, BYW34, BYW35, BYW36
Vishay Semiconductors Fast Avalanche Sinterglass Diode
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Reverse Current vs. Junction Temperature (°C)
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 1 A VF-0.951.1 V
Reverse current VR = VRRM IR-15μA
VR = VRRM, Tj = 150 °C IR- 60 150 μA
Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 200 ns
0
20
40
80
60
100
120
151050 202530
RthJA - Ther. Resist. Junction/Ambient (K/W)
l - Lead Length (mm)
949552
ll
T
L
= constant
IF - Forward Current (A)
0.001
0.01
0.1
1
10
100
0 0.5 1.0 1.5 2.0 3.02.5
VF - Forward Voltage (V)
16345
Tj = 25 °C
Tj = 175 °C
16346
I
FAV
- Average Forward Current (A)
0 20 40 60 80 100 120 140 160 180
Tamb - Ambient Temperature (°C)
2.5
2.0
1.5
1.0
0.5
0
V
R
= V
RRM
half sinewave
R
thJA
= 100 K/W
PCB: d = 25 mm
R
thJA
= 45 K/W
I = 10 mm
1
10
100
1000
25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
16347
IR - Reverse Current (A)
VR = VRRM
BYW32, BYW33, BYW34, BYW35, BYW36
Fast Avalanche Sinterglass Diode Vishay Semiconductors
Document Number: 86048 For technical questions within your region, please contact one of the following: www.vishay.com
Rev. 1.7, 30-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage
Fig. 7 - Thermal Response
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
0
50
250
100
150
200
300
25 50 75 100 125 150 175
T
j
- Junction Temperature (°C)
16348
P
R
- Reverse Power Dissipation (mW)
P
R
-Limit
at 100 % V
R
P
R
-Limit
at 80 % V
R
V
R
= V
RRM
0
5
10
15
20
30
25
35
40
0.1 1 10 100
VR - Reverse Voltage (V)
16349
CD - Diode Capacitance (pF)
f = 1 MHz
1
10
100
1000
10
-5
10
1
10
0
10
1
10
0
10
-1
10
-2
10
-3
10
-4
tp - Pulse Length (s)I
FRM - Repetitive Peak
Forward Current (A)
949561
Zthp - Thermal Resist. for Pulse Cond. (K/W)
Single pulse
V
RRM
= 600 V
R
thJA
= 100 K/W
T
amb
= 25 °C
45 °C
50 °C
70 °C
100 °C
t
p
/T = 0.5
0.2
0.02
0.01
0.1
20543
3.6 (0.142) max.
26 (1.024) min. 4 (0.157) max. 26 (1.024) min.
0.82 (0.032) max.
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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