DATA SH EET
Product data sheet
Supersedes data of 2001 Oct 10 2003 Mar 20
DISCRETE SEMICONDUCTORS
BAS29; BAS31; BAS35
General purpose controlled
avalanche (double) diodes
db
ook, halfpage
M3D088
2003 Mar 20 2
NXP Semiconductors Product data sheet
General purpose controlled avalanche
(double) diodes BAS29; BAS31; BAS35
FEATURES
Small plastic SMD package
Switching speed: max. 50 ns
General application
Continuous reverse voltage: max. 90 V
Repetitive peak reverse voltage: max. 110 V
Repetitive peak forward current: max. 600 mA
Repetitive peak reverse current: max. 600 mA.
APPLICATIONS
General purpose s witc hing in e.g. surface mounte d
circuits.
DESCRIPTION
General purpos e switching diodes fabricated in planar
technology, and encapsulated in small rectangular plastic
SMD SOT23 packages. The BAS29 consists of a single
diode. The BAS31 has two diodes in series. The BAS35
has two diodes with a common anode.
MARKING
Note
1. = p : Made in Hong Kong.
= t : Made in Malaysia.
= W : Made in China.
PINNING
TYPE NUMBER MARKING CODE(1)
BAS29 L20 or A8
BAS31 L21 or V1
BAS35 L22 or V2
PIN DESCRIPTION
BAS29 BAS31 BAS35
1anode anode cathode (k1)
2not connected cathode cathode (k2)
3cathode common
connection common
anode
handbook, halfpage
21
3
a. Simplified outline. c. BAS31 diode.
b. BAS29 diode. d. BAS35 diode.
MAM233
12
3
12
3
1
2
n.c.
3
Fig.1 Simplified outline (SOT23) and symbols.
2003 Mar 20 3
NXP Semiconductors Pr oduct dat a shee t
General purpose controlled avalanche
(double) diodes BAS29; BAS31; BAS35
LIMITING VALUES
In accordance with the Absolute Maximum Ratin g S ystem (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRRM repetitive peak reverse voltage 110 V
VRcontinuous revers e voltage 90 V
IFcontinuous forward current single diode loaded; se e Fig.2;
note 1 250 mA
double diode load ed; s ee Fig.2;
note 1 150 mA
IFRM repetitive peak forward current 600 mA
IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs10 A
t = 100 µs4 A
t = 1 s 0.75 A
Ptot total power dissipation Tamb = 25 °C; note 1 250 mW
IRRM repetitive peak reverse current 600 mA
ERRM repetitive peak reverse energy tp 50 µs; f 20 Hz; Tj = 25 °C5mJ
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
2003 Mar 20 4
NXP Semiconductors Pr oduct dat a shee t
General purpose controlled avalanche
(double) diodes BAS29; BAS31; BAS35
ELECTRICAL CHARACTERISTIC S
Tj = 25 °C unless otherwise specified.
THERMAL CHARACTE RISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VFforward voltage see Fig.3
IF = 10 mA 750 mV
IF = 50 mA 840 mV
IF = 100 mA 900 mV
IF = 200 mA 1 V
IF = 400 mA 1.25 V
IRreverse current see Fig.5
VR = 90 V 100 nA
VR = 90 V; Tj = 150 °C100 µA
V(BR)R reverse avalanche breakdown
voltage IR = 1 mA 120 170 V
Cddiode capacit an ce f = 1 MHz; VR = 0; see Fig.6 35 pF
trr reverse recove ry time when switched from IF = 30 mA to
IR = 30 mA; RL = 100 ; measured
at IR = 3 mA; see Fig.7
50 ns
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 360 K/W
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
2003 Mar 20 5
NXP Semiconductors Pr oduct dat a shee t
General purpose controlled avalanche
(double) diodes BAS29; BAS31; BAS35
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
(1) Single diode loaded.
(2) Double diode loaded.
handbook, halfpage
0 100
(1)
(2)
200
300
200
0
100
MBG440
Tamb (oC)
IF
(mA)
Fig.2 Maximum permissible continuou s for wa rd
current as a func tion of ambient
temperature. Fig.3 Forward current as a function of forward
voltage.
handbook, halfpage
02
600
0
200
400
MBH280
1
IF
(mA)
VF (V)
(1) (2) (3)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
handbook, full pagewidth
MBH327
10 tp (µs)
1
IFSM
(A)
102
101104
102103
10
1
Fig.4 Maximum permissible non-repetitive peak forwar d current as a function of puls e duration.
Based on square wave currents.
Tj = 25 °C prior to surge.
2003 Mar 20 6
NXP Semiconductors Pr oduct dat a shee t
General purpose controlled avalanche
(double) diodes BAS29; BAS31; BAS35
Fig.5 Reverse current as a function of junc tion
temperature.
handbook, halfpage
10
200
0
MBH282
100 Tj (
o
C)
IR
(µA)
1
10
2
10
1
10
2
(1) (2)
(1) VR = 90 V; maximum values.
(2) VR = 90 V; typical values.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj = 25 °C.
handbook, halfpage
0102030
VR (V)
40
Cd
(pF)
30
10
0
20
MGD003
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SIF
D.U.T.
R = 50
i
SAMPLING
OSCILLOSCOPE
MGA881
Fig.7 Reverse reco very voltage test circuit and waveforms.
(1) IR = 3 mA.
2003 Mar 20 7
NXP Semiconductors Pr oduct dat a shee t
General purpose controlled avalanche
(double) diodes BAS29; BAS31; BAS35
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT2
3
2003 Mar 20 8
NXP Semiconductors Pr oduct dat a shee t
General purpose controlled avalanche
(double) diodes BAS29; BAS31; BAS35
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s) described in this do cument may have ch anged since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the produc t specification.
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modificat ion .
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values a re s t ress ratings only and
operation of the device at these or an y other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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Customer notification
This data sheet was changed to reflect the new company name NXP Semicon ductors. No changes were
made to the content, except for the legal definitions and disclaimer s.
Printed in The Netherlands 613514/05/pp9 Date of release: 2003 Mar 20 Document order number: 9397 750 10962