BAS29 - NXP - Datasheet.Directory

DATA SH EET

Product data sheet

Supersedes data of 2001 Oct 10 2003 Mar 20

DISCRETE SEMICONDUCTORS

BAS29; BAS31; BAS35

General purpose controlled

avalanche (double) diodes

ook, halfpage

M3D088

2003 Mar 20 2

NXP Semiconductors Product data sheet

General purpose controlled avalanche

(double) diodes BAS29; BAS31; BAS35

FEATURES

•Small plastic SMD package

•Switching speed: max. 50 ns

•General application

•Continuous reverse voltage: max. 90 V

•Repetitive peak reverse voltage: max. 110 V

•Repetitive peak forward current: max. 600 mA

•Repetitive peak reverse current: max. 600 mA.

APPLICATIONS

•General purpose s witc hing in e.g. surface mounte d

circuits.

DESCRIPTION

General purpos e switching diodes fabricated in planar

technology, and encapsulated in small rectangular plastic

SMD SOT23 packages. The BAS29 consists of a single

diode. The BAS31 has two diodes in series. The BAS35

has two diodes with a common anode.

MARKING

Note

1. ∗ = p : Made in Hong Kong.

∗ = t : Made in Malaysia.

∗ = W : Made in China.

PINNING

TYPE NUMBER MARKING CODE(1)

BAS29 L20 or ∗A8

BAS31 L21 or ∗V1

BAS35 L22 or ∗V2

PIN DESCRIPTION

BAS29 BAS31 BAS35

1anode anode cathode (k1)

2not connected cathode cathode (k2)

3cathode common

connection common

anode

handbook, halfpage

a. Simplified outline. c. BAS31 diode.

b. BAS29 diode. d. BAS35 diode.

MAM233

n.c.

Fig.1 Simplified outline (SOT23) and symbols.

2003 Mar 20 3

NXP Semiconductors Pr oduct dat a shee t

General purpose controlled avalanche

(double) diodes BAS29; BAS31; BAS35

LIMITING VALUES

In accordance with the Absolute Maximum Ratin g S ystem (IEC 60134).

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

VRRM repetitive peak reverse voltage −110 V

VRcontinuous revers e voltage −90 V

IFcontinuous forward current single diode loaded; se e Fig.2;

note 1 −250 mA

double diode load ed; s ee Fig.2;

note 1 −150 mA

IFRM repetitive peak forward current −600 mA

IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to

surge; see Fig.4

t = 1 µs−10 A

t = 100 µs−4 A

t = 1 s −0.75 A

Ptot total power dissipation Tamb = 25 °C; note 1 −250 mW

IRRM repetitive peak reverse current −600 mA

ERRM repetitive peak reverse energy tp ≥ 50 µs; f ≤ 20 Hz; Tj = 25 °C−5mJ

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

2003 Mar 20 4

NXP Semiconductors Pr oduct dat a shee t

General purpose controlled avalanche

(double) diodes BAS29; BAS31; BAS35

ELECTRICAL CHARACTERISTIC S

Tj = 25 °C unless otherwise specified.

THERMAL CHARACTE RISTICS

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

VFforward voltage see Fig.3

IF = 10 mA −750 mV

IF = 50 mA −840 mV

IF = 100 mA −900 mV

IF = 200 mA −1 V

IF = 400 mA −1.25 V

IRreverse current see Fig.5

VR = 90 V −100 nA

VR = 90 V; Tj = 150 °C−100 µA

V(BR)R reverse avalanche breakdown

voltage IR = 1 mA 120 170 V

Cddiode capacit an ce f = 1 MHz; VR = 0; see Fig.6 −35 pF

trr reverse recove ry time when switched from IF = 30 mA to

IR = 30 mA; RL = 100 Ω; measured

at IR = 3 mA; see Fig.7

−50 ns

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-tp thermal resistance from junction to tie-point 360 K/W

Rth j-a thermal resistance from junction to ambient note 1 500 K/W

2003 Mar 20 5

NXP Semiconductors Pr oduct dat a shee t

General purpose controlled avalanche

(double) diodes BAS29; BAS31; BAS35

GRAPHICAL DATA

Device mounted on an FR4 printed-circuit board.

(1) Single diode loaded.

(2) Double diode loaded.

handbook, halfpage

0 100

(1)

(2)

200

300

200

100

MBG440

Tamb (oC)

(mA)

Fig.2 Maximum permissible continuou s for wa rd

current as a func tion of ambient

temperature. Fig.3 Forward current as a function of forward

voltage.

handbook, halfpage

600

200

400

MBH280

(mA)

VF (V)

(1) (2) (3)

(1) Tj = 150 °C; typical values.

(2) Tj = 25 °C; typical values.

(3) Tj = 25 °C; maximum values.

handbook, full pagewidth

MBH327

10 tp (µs)

IFSM

(A)

102

10−1104

102103

Fig.4 Maximum permissible non-repetitive peak forwar d current as a function of puls e duration.

Based on square wave currents.

Tj = 25 °C prior to surge.

2003 Mar 20 6

NXP Semiconductors Pr oduct dat a shee t

General purpose controlled avalanche

(double) diodes BAS29; BAS31; BAS35

Fig.5 Reverse current as a function of junc tion

temperature.

handbook, halfpage

200

MBH282

100 Tj (

(µA)

−2

−1

(1) (2)

(1) VR = 90 V; maximum values.

(2) VR = 90 V; typical values.

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

f = 1 MHz; Tj = 25 °C.

handbook, halfpage

0102030

VR (V)

(pF)

MGD003

handbook, full pagewidth

trr

(1)

IFt

output signal

trt

10%

90%

input signal

V = V I x R

RF S

R = 50

SΩIF

D.U.T.

R = 50

iΩ

SAMPLING

OSCILLOSCOPE

MGA881

Fig.7 Reverse reco very voltage test circuit and waveforms.

(1) IR = 3 mA.

2003 Mar 20 7

NXP Semiconductors Pr oduct dat a shee t

General purpose controlled avalanche

(double) diodes BAS29; BAS31; BAS35

PACKAGE OUTLINE

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

97-02-28

99-09-13

IEC JEDEC EIAJ

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface mounted package; 3 leads SOT2

2003 Mar 20 8

NXP Semiconductors Pr oduct dat a shee t

General purpose controlled avalanche

(double) diodes BAS29; BAS31; BAS35

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s) described in this do cument may have ch anged since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the produc t specification.

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specified use witho ut fu rth e r testing or modificat ion .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values a re s t ress ratings only and

operation of the device at these or an y other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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extract of th e product data given in the Limiting values and

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NXP Semiconductors

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Printed in The Netherlands 613514/05/pp9 Date of release: 2003 Mar 20 Document order number: 9397 750 10962