SOT-523 Plastic-Encapsulated Diodes
BAS16T/BAW56T/BAV70T/BAV99T
SWITCHING DIODE
FEATURES
Power dissipation
PD: 150 mW (Tamb=25℃)
Forward Current
IF: 75 m A
Reverse Voltage
VR: 85 V
Operating and storage junction temperature range
TJ, T stg: -55℃ to +150℃
BAS16T Marking: A2 BAW56T Marking: JD BAV70T Marking: JJ BAV99T Marking: JE
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Reverse breakdown voltage V(BR) IR= 100µA 85 V
IR1 V
R=75V 2
µA
Reverse voltage leakage current IR2 V
R=25V 0.03
µA
Forward voltage VF
IF=1 mA
IF=10 mA
IF=50 mA
IF=150mA
715
855
1000
1250
mV
Diode capacitance CD V
R=0V, f=1MHz 1.5 pF
Reverse recovery time t r r 4
nS
SOT-523
Transys
Electronics
LI
M
ITE
D
Typical Characteristics BAS16T/BAW56T/BAV70T/BAV99T
