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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
January 2015
© 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF2280 • Rev. 1.8
FPF2280 Over-Voltage Protection Load Switch
FPF2280
Over-Voltage Protection Load Switch
Features
Surge Protection
- IEC 61000-4-5: > 100 V
Over-Voltage Protection (OVP)
Over-Temperature Protection (OTP)
ESD Protection
- Human Body Model (HBM): > 3.5 kV
- Charged Device Model (CDM): > 2 kV
- IEC 61000-4-2 Air Discharge: > 15 kV
- IEC 61000-4-2 Contact Discharge: > 8 kV
Applications
Mobile Handsets and Tablets
Portable Media Players
MP3 Players
Description
The FPF2280 features a low-RON internal FET and an
operating range of 2.5 VDC to 5.5 VDC (absolute
maximum of 29 VDC). An internal clamp is capable of
shunting surge voltages >100 V, protecting downstream
components and enhancing system robustness. The
FPF2280 features over-voltage protection that powers
down the internal FET if the input voltage exceeds the
OVP threshold. The OVP threshold is adjustable with
optional external resistors. Over-temperature protection
also powers down the device at 130°C (typical).
Exceptionally low off-state current (<1 μA maximum)
facilitates compliance with standby power requirements.
The FPF2280 is available in a fully “green” compliant
1.3 mm × 1.8 mm Wafer-Level Chip-Scale Package
(WLCSP) with backside laminate.
Related Resources
http://www.fairchildsemi.com/
Ordering Information
Part Number
Operating
Temperature Range
Top Mark
Package
Packing
Method
FPF2280BUCX_F130
-40°C 105°C
HC
12-Ball, 0.4 mm Pitch WLCSP
Tape & Reel
COUT
OVP LOGIC
OTP
Gate Driver, Charge
Pump, Bandgap,
Oscillator
R1
R2
CIN
#ACOKOVLO
GND
IN OUT
Rpu
Vpu
Figure 1. Functional Block Diagram
© 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF2280 Rev. 1.8 2
Pin Configuration
GND
GND
GND
OUT
IN
ININ
OUT
OUT#EN
#ACOK
OVLO
A
B
C
1 2 3 4
GND
GND
GND
OUT
IN
IN IN
OUT
OUT #EN
#ACOK
OVLO
A
B
C
1234
Figure 2. Pin Configuration (Top View)
Figure 3. Pin Configuration (Bottom View)
Pin Definitions
Name
Bump
Type
Description
IN
B3, C2, C3
Input/Supply
Switch Input and Device Supply
OUT
A2, A3, B2
Output
Switch Output to Load
#ACOK
B1
Output
(Open Drain)
Power Good
1
VIN < VIN_min or VIN ≥ VOVLO
0
Voltage Stable
#EN
A1
Input
Device Enable ( Active LOW)
OVLO
C1
Input
Over-Voltage Lockout Adjustment Pin
GND
A4, B4, C4
Supply
Device Ground
Over-Voltage Lockout (OVLO) Calculation
OVLO can be set externally and override default
OVP. By connecting an external resistor-driver to the
OVLO pin. Equation (1) can produce the desired trip
voltage and resistor values.

 󰇟 󰇠
(1)
Recommended minimum R1 = 1 M
© 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF2280 Rev. 1.8 3
On-The-Go (OTG) Functionality
During OTG operation, the FPF2280 is initially disabled
and the power FET's bulk diode is forward biased. The
bulk diode represents ~0.7 V drop across the device,
which remains until the V_IN voltage increases past
2.5 V, when the device is fully enabled. While the device
is disabled and the body diode is forward biased, the
max DC current through the diode is 1.8 A. This current
is limited by the thermal performance of the device
(0.7 Vx 1.8 A = 1.36 W). This current should be
transient; the #EN pin must be pulled LOW to ensure
the device fully enables. The transient should not
exceed the RC time constant of the C_IN and C_OUT
capacitors. At the system level, over-voltage and current
protection should be provided outside the FPF2280.
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Min.
Max.
Unit
VIN
V_IN to GND & V_IN to V_OUT = GND or Float
-0.3
29.0
V
VOUT
V_OUT to GND
-0.3
VIN + 0.3
V
VOVLO
OVLO to GND
-0.3
24.0
V
V#EN_ACOK
Maximum DC Voltage Allowed on #EN or ACOK Pin
6
V
IIN
Switch I/O Current (Continuous)
4.5
A
tPD
Total Power Dissipation at TA = 25°C
1.48
W
TSTG
Storage Temperature Range
-65
+150
°C
TJ
Maximum Junction Temperature
+150
C
TL
Lead Temperature (Soldering, 10 Seconds)
+260
C
JA
Thermal Resistance, Junction-to-Ambient(1) (1-in.2 Pad of 2-oz. Copper)
84.1
°C/W
ESD
IEC 61000-4-2 System ESD
Air Gap
15.0
kV
Contact
8.0
Human Body Model, ANSI/ESDA/JEDEC JS-001-2012
All Pins
3.5
Charged Device Model, JESD22-C101
All Pins
2.0
Surge
IEC 61000-4-5, Surge Protection
VIN
100
V
Note:
1. Measured using 2S2P JEDEC std. PCB.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol
Parameter
Min.
Max.
Unit
VIN
Supply Voltage
2.5
20.0
V
TA
Operating Temperature
-40
+105
ºC
© 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF2280 Rev. 1.8 4
Electrical Characteristics
TA = -40°C to 105°C unless otherwise indicated. Typical values are VIN = 5.0 V, IIN ≤ 3 A, CIN = 0.1 μF and TA = 25°C.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
VIN_CLAMP
Input Clamping Voltage
IIN = 10 mA
35
V
IQ
Input Quiescent Current
VIN = 5 V, #EN = 0 V
58
100
μA
IIN_Q
OVLO Supply Current
VOVLO = 3 V, VIN = 5 V, VOUT = 0 V
63
100
μA
VIN_OVLO
Internal Over-Voltage Trip Level
VIN Rising, OVLO = GND
6.6
6.8
7.0
V
VIN Falling
6.2
V
VOVLO_TH
OVLO Set Threshold
VIN = 2.5 V to VOVLO
1.12
1.20
1.24
V
VOVLO_RNG
Adjustable OVLO Threshold
Range
VIN = 2.5 V to VOVLO
4
20
V
VOVLO_SELECT
External OVLO Select Threshold
0.30
0.28
V
RON
Resistance from VIN to VOUT
VIN = 5 V, IOUT = 1 A. TA = 25ºC
30
39
mΩ
COUT
OUT Load Capacitance(2)
VIN = 5 V
1000
µF
IOLVO
OVLO Input Leakage Current
VOVLO = VOVLO_TH
-100
100
nA
TSDN
Thermal Shutdown(2)
130
°C
TSDN_HYS
Thermal Shutdown Hysteresis(2)
20
°C
Digital Signals
VOL
#ACOK Output Low Voltage
VI/O = 3.3 V, ISINK = 1 mA
0.4
V
VIH_#EN
Enable HIGH Voltage
VIN = 2.5 V to VOVLO
1.2
V
VIL_#EN
Enable LOW Voltage
VIN = 2.5 V to VOVLO
0.5
V
IACOK_LEAK
#ACOK Leakage Current
VI/O = 3.3 V, #ACOK Deasserted,
#EN = 0 V
-0.5
0.5
µA
#EN_Leak
#EN Leakage Current
VIN = 5.0 V, VOUT = Float
-1.0
1.0
µA
Timing Characteristics
tDEB
Debounce Time
Time from 2.5 V < VIN < VIN_OVLO
to VOUT = 0.1 × VIN
15
ms
tSTART
Soft-Start Time
Time from VIN = VIN_min to 0.2 ×
#ACOK, VIO = 1.8 V with 10
Pull-up Resistor
30
ms
tON
Switch Turn-On Time
VIN = 5 V, RL = 100 Ω, VOUT from
0.1 × VIN to 0.9 × VIN, CLOAD =
100 µF
2
ms
tOFF
Switch Turn-Off Time(2)
RL = 100 Ω, CL = 0 µF, VIN >
VOVLO to VOUT = 0.8 × VIN
125
ns
Note:
2. Guaranteed by characterization and design.
© 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF2280 Rev. 1.8 5
Timing Diagrams
VIN
VOUT
#EN
tSTART
Measure VIN >2.5V to
0.2*#ACOK
#ACOK: VIO = 1.8V w/
10KΩ Pull Up
tDEB
tON
Measure
@ 10/90%
tOFF
Measure @
80% #EN
VOUT = 0.8*VIN
#ACOK
Figure 4. Timing for Power Up and Normal Operation
VIN
VOUT
#ACOK
tSTART
tOFF
Measure @
OVLO_Rising
VOUT = 0.8*VIN
VOVLO tSART
Figure 5. Timing for OVLO Trip
Product-Specific Package Dimensions
D
E
X
Y
1288 μm ±30 μm
1828 μm ±30 μm
314 μm ±18 μm
244 μm ±18 μm
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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