, MOTOROW Order thie document by 2N2080JWD SEMICONDUCTOR TECHNICAL DATA *{iv \ :,+ \ `! ..,? .>W, : \ ..,i. ,: . ~ ,,:, , , IIUlp 2N2060JTX, JANS Processed per MIL4-195001270 J '11.. ~1. .8:6 : qo ~ Dual NPN Silicon Smal14ignal Transistor ...dasignedfor genera~urpose amptifierap~oations. ~@Ial PIw Tochnologiu ,: operation ., Device Dissipation @ TA - 25C Derste above 25C @ Tc = 25C Derate above 25C 540 600 3.43 2.12 12.1 3.08 1.5 8.6 mW mW/"C Watts mW/OC `c -65 to 200 Operating Jution and Storage Temwrature Range ,,, $, k ,,..,,-. ELECTRICAL CHARACTEql$ti@CA ,,..> ..,.,++{..,....,. - 25C unless othew.se noted.) cQ.q*?@ic I Symbol I Mln Mm Unit OFF CHARACTERISTi&~:<@ `j Collactor-Emtier Br_~n (IC .30 W*? 1*+~# \' Collector-E~:$#~down (1c -1 q,.@~}*~BE. Voltage(l) V(BR)CEO 60 -- Vdc Vohge(l) 10 ohms m=) V(BR)CER 80 -- Vdc V(BR)CBO 100 -- Vdc V(BR)EBO 7.0 -- Vdc -- 2.0 nAdc tide Coll@r~~ BrAdown Voltage ,~~;~~~~~, IE = O) Y, ~:~~,~~xe Bre*down Voltage t:$flk = 100 @de, ic = O) Collector Cutoff Current ~CB = 80 V&) NCB = 80 V*. TA = 150"C) ]CBO Bssa Cutoff Current ~BE = 5.0 Vdc) IEBO 1-1101 l-1201~dcl (oontinued) (1)Pulsed. Pulse Width 250 to 350@, D@ Qcle 1.0 to 2.~. a RN O 9/93 @ Motorola,Inc.19W I M-ROLA @ 2N2060J~,JANS ELECTRICALCHARACTERISTICS-- wntinud ~A = 25C unlessothewise noted.) Chare*rlatIc ~bol I Mln MU 25 75 Unit ON CHARACTERISTICS DC CurrentGain (1c= 10 @do, vCE -5.0 Vdo) (1c= 100~do, vCE = 5.0 Vdo) (1c.1.0 ~do, vCE = 5.0 Vdo) (1c= 10 mAdo,vCE = 5.0 vdo)(l) (1c= 100~do, VCE = 5.0 Vdc,TA = +"C) -- hFE Coll@or-Emitter SaturationVoltage (IC = 50 ~dO, IB = 5,0 rnAdc) - BasWmitter SaturationVokge (Ic = 50 @do, IB= 5.0 mAdc) SWLL41GNAL CHARACTERISTICS OutputCapectinoe ~CB=lOv@.lE =0, f= O.ltol.O MHz) InputCapscitanw WEB= 0.5 Vdo, IC -0, f = 0.1 to 1.0 MHz) \,,:t<.% !:* \~..?,\\$ ..$:~~t ~i.,. $ /.$' +*+* i~ , ".,:?,*., ~ .::..>,. ,,{~,~t. -- \ .1< hfe ,,4~i* `" 50 ~'., ,x ,,. &":$*.~+i,, ..\ ~.~ ,,;,$~~ .}+Ty Noisefigure (Ic = 300 @do, VCE = 10 Vdo) (f= 1.0kHz, RG= 510 ohms) (f= 10 kHz, RG = 1.0 kohms) NF CurrentGain (1C= 1.0 mAdc,VCE = 5.0 Vdc,f = 1.0 kHz) SmalMgnd CurrentTransferRatio,Magnitude (Ic = 50 mAdo,vCE = 10 Vdo,f = 20 MHz) InputImpedsnoe ([C= 1.0 rrrAdc,VCB = 5.0 Vdo,f = 1.0 kHz) dB 8.0 8.0 150 -- 25 20 30 ohms Inputlmpedsn~ (IC = 1.0 mAdc,VCB = 5.0 Vdo,f = 1.0 kHz) 1.0 4.0 kohrns O@ut Adm.~n~ -- 16 ~hos 0.9 0.9 1.0 1.0 -- 5.0 5.0 $* ~,. ,:. ~`~$},,, "i " ,,>.,,.,, \,*.,, ~," ;!;< DC(,C= CurrentGainRatio ,00 Mb, VCE - S.. v&)(2M:!$ii~.,..' hib MATCHINGCHARACTERISTICS (1c= 1.0tide, vCE = 5.0 V~j~~),,.$ Bes+EmMer VoltageDifferq@i#;r$ (IC= 100@dO,vCE =#~$Y@) (Ic = 1.0 mk, vc~ q@*,&c) ABas*EmMer VoX~~~*mntial overTemperature (Ic = 100~~$k,w~ 5.0 Vdo,TA= 25 to ~"C) ~ (1C= 100,@d;~c~ = 5,0 Vdo,TA= 25 tO 125"C) -- hFElhFE2 VBE1-VB~ -- mVdc A~BE1-VB&) mVdc -- I -- Coll@o[,~:=or LeakageCurrent ~~{~~~~o vd~) lcl@ 0.8 1.0 100 (1) Put@*ulse Wti 250to 350P, D~ Qcle 1.0to 2.0%. (2)The krger numbertill be placedinthe denominator. COMMERCIAL PLUS AND MIMAERO SMALL SIGNAL TRANSISTOR DATA *I2 nAdc 2N2060JTX,JANS e o .. COMMERCIAL PLUS AND MIUAERO SMALL SIGNAL TRANSISTOR DATA >13 `2N2060JTX,JANS PACWGE DIMENSIONS m3 PIN1, 2$ 3. 4. 5, k 8. ,~i?::' ,,$, .,:X ., .,.,:'~ .*,:";, b,\ Motorola reeerva@*to@e*eewWoutfurthernotiMtoanypr-herein. Motorola ties no warranty, repreeentationorguarantee regarding the suitebi~i of% ~~ for any partiilar purpose, nor dose Motorok assume any tiabi~i arising out of the appti~on or use of any prod~ or cimit, Md epedfi-S enyand efl li~~i, itiuding wfihoutlim~on aneequentid orinddenti damages. ~@Wparametere m end do very in dflerent SPpN@l~ ~~.~ieting parameters, indudng ~ypidw must k vefWted for -h -mer apptimtion by ouefome~steohnid experts. Motorolanot WW ~li~nee u~er Nepatent rights nor the rfghte of others. Motorola produote are not designed, intended, or authotied for U* es mmponente in eys\* ffOrsuWW impant into the ~, or other app~iions intended to support or sustain l~e, or for any other applhtion In wh~ the fdlure of th~~,prodti @uld waste a eNuationwhere pereond injury or death may -r. Should Buyer pumhese or use Motorola produ~ for any such %Wworunaufhodzad @imiOn, Buyershdl itiemnify end hold Motorola and its offi~ra, employees, subsidiaries, ~uates, ati~~b~o~ h~lees w$~~?ms~ *I *ma9=p * ewn=, am r~n*le *omey f- tisin9 Omof, @r*ly or Itireotly, any ddm of pereond injuw or death ~h unintended or unauthonzw use, even if such claim alleges that Motorola was negfigent regarding the design or menufa~re of the part. Motorola and% are regieferd tradem~ of Motorola, IM. Motorola, IM. is en EqW Opportunity/Affirmative Atiion Employer. Literature DletrfbutfonQntere: USA Motorola Uerature Dietributiom P.O. Box 2~1% Phoenix, Arizona m. EUROPE Motorola Ltd.; European Litemture OentrW~ Tanners Ddve, BIXelands, Milton Keynes, MK14 5BP, England. JAPAN Nippon Motorola Ltd.; W2-1, Nishffio@ Shinagewati, To~o 141, Japan. ASIA PACIFIC Motorola Semimnduotora H.K. Ltd.; Sirin H*ur Oenter, No. 2 Dal King Street, Tai Po Industrid ~tate, Tei Po, N.T., Hong Kong. @ 1PHW4101 1-2 PRINWD IN USA W24 MPWPOD CPTO YDACAA 2N20MJTND llllllllllIllllllllllllllllllllllllllllllllllllllllllll