AMSC N/A FSC 5961
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INCH-POUND
MIL-PRF-19500/304F
17 April 2019
SUPERSEDING
MIL-PRF-19500/304E
20 September 2011
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY,
TYPES 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893,
1N3890R, 1N3891R, 1N3893R, AND A-VERSIONS,
QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 12 and 20 ampere, silicon, fast recovery,
power rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each
encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance (JANHC and JANKC)
for each unencapsulated device type.
1.2 Physical dimensions. The device package outlines are as follows: Isolated 2 terminal stud mount (DO-10) in
accordance with figure 1, non-isolated 1 terminal stud mount (DO-4) in accordance with figure 2, and unencapsulated
die in accordance with figure 3.
1.3 Maximum ratings. Unless otherwise specified, TC = 25°C.
Type
VR
VRWM
IO (1)
IFSM
trr
TC
T
C
= 100°C
T
C
= 100°C
t = 1/120 s
V V (pk) A dc A (pk) ns °C
1N3885
100
100
12
150
200
-65 to +150
1N3885A
100
100
20
225
150
-65 to +150
1N3890, R
100
100
12
175
200
-65 to +150
1N3890A, AR
100
100
20
250
150
-65 to +150
1N3886
200
200
12
150
200
-65 to +150
1N3886A
200
200
20
225
150
-65 to +150
1N3891, R
200
200
12
175
200
-65 to +150
1N3891A, AR
200
200
20
250
150
-65 to +150
1N3888
400
400
12
150
200
-65 to +150
1N3888A
400
400
20
225
150
-65 to +150
1N3893, R
400
400
12
175
200
-65 to +150
1N3893A, AR
400
400
20
250
150
-65 to +150
(1) Derate linearly 2 percent of IOC for TC > 100°C, see figure 4.
Storage temperature: TC = -65°C to +150°C for 1N3885, 1N3886, 1N3888 and A versions.
Storage temperature: TC = -65°C to +175°C for 1N3890, 1N3891, 1N3893 and A, R, AR versions.
Barometric pressure reduced: 15 mmHg.
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 16 August 2019.
MIL-PRF-19500/304F
2
1.4 Primary electrical characteristics. Unless otherwise specified, TC = 25°C.
Type IR1 IR2 TA = +150°C
VR (V dc) µA dc VR (V dc) mA dc
100
10.0
100
2
200
10.0
200
2
400
10.0
400
2
Type RθJC C/W)
Isolated non - A
3.0
Isolated A
2.5
Non isolated non - A
2.0
Non isolated A
1.5 (1)
(1) See figure 5 for thermal impedance curves.
1.5 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-19500, and as specified herein.
See 6.4 for PIN construction example, 6.5 for a list of available PINs, and 6.6 for supersession information.
1.5.1 JAN certification mark and quality level.
1.5.1.1 Quality level designators for encapsulated devices. The quality level designators for encapsulated devices
that are applicable for this specification sheet from the lowest to the highest level are as follows: "JAN", "JANTX",
"JANTXV", and "JANS".
1.5.1.2 Quality level designators for unencapsulated devices (die). The quality level designators for
unencapsulated devices that are applicable for this specification sheet are "JANHC" and "JANKC".
1.5.2 Device type. The designation system for the devices covered by this specification sheet is as follows.
1.5.2.1 First number and first letter symbols. The devices of this specification sheet use the first number and letter
symbols "1N".
1.5.2.2 Second number symbols. The second number symbols for the devices covered by this specification sheet
are as follows: "3885", "3886", "3888", "3890", "3891" and "3893".
1.5.3 Suffix symbols. The following suffix symbol(s) are incorporated into the PINs for this specification sheet.
A blank designator identifies that the device uses the electrical parameters of the registered device.
A
An "A" designator identifies that the device has modified electrical parameters in comparison to the
registered device.
R A "R" designator identifies that the device terminals have been reversed (reverse polarity).
AR
An "AR" designators identifies that the device has both suffix symbol attributes (modified electrical
parameters and reverse polarity terminals).
1.5.3.1 Device types with no suffix symbols. Applicable to all device types.
1.5.3.2 Device types with an "A" suffix symbol. Applicable to all device types.
1.5.3.3 Device types with either a "R" or "AR" suffix symbols. Device types 1N3890, 1N3891, 1N3893 only.
MIL-PRF-19500/304F
3
1.5.5 Lead finish. The lead finishes applicable to this specification sheet are listed on QPDSIS-19500.
1.5.6 Die identifiers for un-encapsulated devices. The only manufacturer die identifier that is applicable for this
specification sheet is "A" (see 6.5 and figure 3).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in section 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
MIL-PRF-19500 Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 Test Methods For Semiconductor Devices.
(Copies of these documents are available online at https://quicksearch.dla.mil.)
2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this specification and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer’s list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
PRM Peak reverse power
3.4 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be
as specified in MIL-PRF-19500 and on figures 1 and 2 for encapsulated devices, and figure 3 for unencapsulated die.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500. Where a choice of lead
finish is desired, it shall be specified in the contract or purchase order (see 6.2).
3.4.2 Diode types 1N3885, 1N3886, and 1N3888 (see figure 1). Diode types1N3885, 1N3886, and 1N3888 have
the stud and seating plane electrically insulated from the anode, cathode, and case.
MIL-PRF-19500/304F
4
Isolated types: 1N3885, 1N3885A, 1N3886, 1N3886A, 1N3888, and 1N3888A
LTR
Dimensions
LTR
Dimensions
Inches
Millimeters
Notes
Inches
Millimeters
Notes
Min
Max
Min
Max
Min
Max
Min
Max
C
.020
.038
0.51
0.97
OAH
.950
24.13
CD
.487
12.37
OM
.163
.189
4.14
4.80
3
CH
.550
13.97
SL
.422
.453
10.72
11.50
CH1
.050
1.27
SP
4, 5, 6, 7
HF
.487
.500
12.37
12.70
T
.060
1.52
HT
.085
.160
2.16
4.06
T1
.110
.140
2.79
3.56
HT1
.040
1.02
T2
.055
.075
1.40
1.90
J
.750
.875
19.05
22.22
TD
.250
6.35
K
.110
.140
2.79
3.56
2
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Angular orientation of this terminal is undefined. Square or radius on end of terminals is optional.
3. Diameter variations within these limits are permitted.
4. The ASME thread reference is 10-32 UNF-2A.
5. Max pitch diameter of plated threads shall be basic pitch diameter .169 inch (4.29 mm).
6. Units shall not be damaged by torque of 15 inch-pounds (1.7 N-m) applied to 10-32 UNF-2B nut assembled
on thread.
7. Complete threads to extend to within .078 inch (1.98 mm) of the seating plane.
8. Stud and seating plane shall be electrically insulated from the case, cathode, and anode.
9. In accordance with ASME Y14.5M, diameters are equivalent to ɸx symbology.
FIGURE 1. Physical dimensions of DO-10 package.
HF
OAH
C
SL
CH
TD
T
CD
OM
SP
SEATING
PLANE
SEE NOTE 2
CH1
JUNCTION TEMP
REF POINT
J
K
HT
CATHODE
T
2
T
1
HT
1
MEASUREMENT
MIL-PRF-19500/304F
5
Non-isolated types: 1N3890, 1N3890A, 1N3891, 1N3891A, 1N3893, 1N3893A, 1N3890R, 1N3890AR, 1N3891R,
1N3891AR, 1N3893R, and 1N3893AR
LTR
Dimensions
LTR
Dimensions
Inches
Millimeters
Notes
Inches
Millimeters
Notes
Min
Max
Min
Max
Min
Max
Min
Max
CD
.424
10.77
OAH
.800
20.32
CH
.405
10.29
OM
.163
.189
4.14
4.80
CH1
.020
.065
0.51
1.65
5
SL
.422
.453
10.72
11.50
G
.060
1.52
SP
6, 7, 8, 9
HF
.424
.437
10.77
11.10
T .060 1.52
HT
.075
.175
1.90
4.44
TD .250 6.35
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Forward polarity (cathode to stud) marking is shown.
3. Angular orientation of this terminal is undefined. Square or radius on end of terminals is optional.
4. Diameter variations within these limits are permitted.
5. Terminal-end shape is unrestricted.
6. The ASME thread reference is 10-32 UNF-2A.
7. Max pitch diameter of plated threads shall be basic pitch diameter .169 inch (4.29 mm).
8. Units shall not be damaged by torque of 15 inch-pounds (1.7 N-m) applied to 10-32 UNF-2B nut assembled
on thread.
9. Complete threads to extend to within 0.078 inch (1.98 mm) of the seating plane.
10. In accordance with ASME Y14.5M, diameters are equivalent to ɸx symbology.
FIGURE 2. Physical dimensions of DO-4 package.
HF
OAH
G
SL
CH
TD
T
CD
HT
OM
SEE NOTE 4
SP
SEATING PLANE
SEE NOTE 3
CH1
SEE NOTE 2
JUNCTION TEMP
MEASUREMENT
REF POINT
MIL-PRF-19500/304F
6
A version
LTR Dimensions
Inches Millimeters
Min Max Min Max
A .114 .117 2.89 2.97
B .130 .133 3.30 3.37
C .009 .010 .228 .254
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2 The physical characteristics of the die are as follows:
Metallization:
Top (anode): Cr/Ni/Ag
Back (cathode): Cr/Ni/Ag
Ag thickness = 3,000 Å minimum,
Ni thickness = 1,500 Å minimum,
Cr thickness = 800 Å minimum.
FIGURE 3. Physical dimensions of enencapsulated die, A version (JANHCA and JANKCA).
B
A
C
MIL-PRF-19500/304F
7
3.4.3 Diode types 1N3890, 1N3891, and 1N3893 (see figure 2). Diode types1N3890, 1N3891, and 1N3893
(forward polarity) have the cathode electrically connected to the stud and case.
3.4.4 Diode types 1N3890R, 1N3891R, and 1N3893R (see figure 2). Diode types1N3890R, 1N3891R, and
1N3893R (reverse polarity) have the anode electrically connected to the stud and case.
3.4.5 Dissimilar construction. Types utilizing construction as shown on figure 1 shall not be considered structurally
identical to types utilizing construction as shown in figure 2.
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.5.1 Polarity. The polarity shall be indicated by a graphic symbol with the arrow pointing toward the negative end
for forward bias. The reversed units shall also be marked with an R following the last digit in the PIN.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I herein.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
d. Element evaluation (see 4.6).
4.1.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-PRF-19500 and herein,
except lot accumulation period shall be 3 months in lieu of 6 weeks.
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500, and as specified
herein. Tests in either polarity shall be sufficient to obtain qualification approval of both polarities.
4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
4.2.2 Qualification for JANHC and JANKC. Qualification for JANHC and JANKC devices shall be in accordance
with MIL-PRF-19500.
MIL-PRF-19500/304F
8
4.3 Screening of encapsulated devices. Screening shall be in accordance with table E-IV of MIL-PRF-19500, and
as specified herein. The following measurements shall be made in accordance with table I herein. Devices that
exceed the limits of table I herein shall not be acceptable.
Screen Measurement
JANS level JANTX and JANTXV levels
3b (1) Surge current (see 4.3.1) Surge current (see 4.3.1)
3c Thermal impedance (see 4.3.2) Thermal impedance (see 4.3.2)
9
VF2 and IR1 (2) VF2 and IR1 (2)
10
Method 1038, of MIL-STD-750,
test condition A, t = 96 hours
Method 1038, of MIL-STD-750,
test condition A, t = 48 hours
11 Subgroup 2 of table I herein, VF2 and IR1;
ΔVF2 = 0.1 V (pk) from initial value;
ΔIR1 = ±5 µA dc or 100 percent from the
initial value, whichever is greater.
Subgroup 2 of table I herein, VF2 and IR1;
ΔVF2 = 0.1 V(pk) from initial value;
ΔIR1 = ±5 µA dc or 100 percent from the
initial value, whichever is greater.
12 Burn-in see 4.3.3 and 4.5.2 Not applicable
13 Subgroup 2 and 3 of table I herein, VF2
and IR1; ΔVF2 = 0.1 V (pk);
ΔIR1 = ±5 µA dc or 100 percent from the
initial value, whichever is greater
Not applicable
(1) Surge shall precede thermal response. These tests shall be performed anytime after screen 3 and before
screen 9.
(2) IR1 measurement shall not be indicative of an open condition.
4.3.1 Surge current. The surge current test shall be performed in accordance with condition A of method 4066 of
MIL-STD-750. The following details shall apply: IO = 0; VRM(w) = 0; six surges; TA = 25°C, tp = 8.3 ms, one surge per
minute maximum; IFSM values shall be as listed below:
Surge current value (IFSM)
A - version Non A - version
1N3885
290
190
1N3886
290
190
1N3888
290
190
1N3890, R
310
210
1N3891, R
310
210
1N3893, R
310
210
4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method
3101 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD, and K factor where
appropriate. The limit will be statistically derived. See appendix E, table E-IX, subgroup 4, of MIL-PRF-19500 and
table II, subgroup 4 herein.
MIL-PRF-19500/304F
9
4.3.3 Burn-in and life test. Power burn-in conditions shall be in accordance with test condition B of method 1038 of
MIL-STD-750. The following details shall apply: TC = 100°C, rated IO, see 4.5.2.
a. 1N3885, 1N3890, 1N3890R VR = 100 V (pk)
b. 1N3886, 1N3891, 1N3891R VR = 200 V (pk)
c. 1N3888, 1N3893, 1N3893R VR = 400 V (pk)
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table E-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500
and 4.4.2.1 and 4.4.2.2 herein. Delta electrical measurements shall be in accordance with table III herein.
4.4.2.1 Quality level JANS.
Subgroup Method Condition
B3 4066 Condition A, TC = 100°C; VR = rated VR (see 1.3), six surges, one surge per minute
maximum, tp = 8.3 ms.
Non-A version devices, IFS = 150 A; IO = 12 A dc
A version devices, IFS = 225 A; IO = 20 A dc.
B4 1037 0.25 rated IO < IO applied < rated IO (see 4.5.4) 2,000 cycles.
B5 1027 IF = 35 A dc at: TA = 125°C for 96 hours, or adjusted as required by the chosen TA to
give an average lot TJ = 275°C; f = 60 Hz; VR = rated VR (pk) (see 1.3). For irradiated
devices, include trr as an end-point measurement.
B6 3101 RθJC = rated RθJC (see 1.4); IM = 50 mA IM 250 mA; tH = 30 s minimum;
tMD = 50 - 300 µs.
B8 4065 PRM ≥ 636 W for square wave in accordance with test method 4065 of MIL-STD-750
(PRM ≥ 1,000 W for half-sine wave). Test shall be performed on each sublot; sampling
plan. n = 10, c = 0, electrical end-points, see table I, subgroup 2 herein.
MIL-PRF-19500/304F
10
4.4.2.2 Quality levels JAN, JANTX and JANTXV.
Subgroup Method Condition
B2 1051 Insulated types -55°C to + 175°C; uninsulated types -55°C to + 175°C.
B2 4066 Condition A, TC = 100°C; VR = rated VR (see 1.3), six surges, one surge per minute
maximum, tp = 8.3 ms.
Non-A version devices, IFS = 150 A; IO = 12 A dc
A version devices, IFS = 225 A; IO = 20 A dc.
B3 1037 0.25 rated IO < IO applied < rated IO (see 4.5.4) 2,000 cycles. For irradiated devices,
include trr as an end-point measurement.
B3 1038 Condition A; 340 hrs (separate samples may be used). For irradiated devices, include
or trr as an end-point measurement.
1049
B5 Not applicable.
B6 1032 TA = 150°C.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table E-VII of MIL-PRF-19500 and as follows. Delta electrical measurements shall
be in accordance with table III herein.
Subgroup Method Condition
C2 1056 Test condition B.
C2 2036 Tension, test condition A, t = 15 s.
For 1N3885, A, 1N3886, A, 1N3888, A weight = 5 pounds (2.27 kg).
For 1N3890, A, R, AR, 1N3891, A, R, AR, 1N3893, A, R, AR,
weight = 20 pounds (9.07 kg).
C2 2036 Bending stress, test condition F, method B: t = 15 s.
For 1N3885, A, 1N3886, A, 1N3888, A weight = 1 pounds (0.45 kg).
For 1N3890, A, R, AR, 1N3891, A, R, AR, 1N3893, A, R, AR,
weight = 5 pounds (2.27 kg).
C2 2036 Seal torque, test condition D1, torque = 10 oz-inches (0.07 N-m), t = 15 s.
C5 3101 RθJC = rated RθJC (see 1.4); IM = 50 mA IM 250 mA; tH = 30 s minimum;
tMD = 50 to 300 µs.
C6 1037 0.25 rated IO < IO applied < rated IO (see 4.5.4) 6,000 cycles. For irradiated devices,
include trr as an end-point measurement.
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table E-IX of MIL-PRF-19500, and table II herein. Delta electrical measurements
shall be in accordance with table III herein.
MIL-PRF-19500/304F
11
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Burn-in and steady-state operation life tests. These tests shall be conducted with a half-sine waveform of
the specified peak voltage impressed across the diode in the reverse direction followed by a half-sine waveform of
the specified average rectifier current. The forward conduction angle of the rectified current shall not be greater than
180°C nor less than 150°C.
4.5.3 Insulation resistance (case-to-stud). The case to stud insulation resistance test shall be conducted in
accordance with condition C of method 1016 of MIL-STD-750. The following details shall apply. The case-to-stud
insulation resistance shall be determined in terms of current flow between the case and stud. The specified test
method shall be utilized except that the applied voltage shall be within ±2.0 percent of the specified value and the
current shall be measured by a series microammeter with a voltage drop at 1.0 µA dc of less than 1.0 V dc, and an
accuracy of ±2.0 percent at the 1.0 µA dc point.
4.5.4 DC intermittent operation life. The DC intermittent operation life test shall be conducted in accordance with
method 1037 of MIL-STD-750. The following details shall apply. A cycle shall consist of an "on" period, when power
is applied suddenly, not gradually, to the device for the time necessary to achieve a delta case temperature of 85°C,
+15°C, -5°C, followed by an "off" period, when the power is suddenly removed, for cooling. Auxiliary (forced) cooling
is permitted during the off period only.
theating 5 minutes. P = VF x IF or P = VF(pk) x Iav if using sine wave current. DC full wave current shall be
used for the power required during the "on" period (or equivalent half sine wave current).
Within the time interval of 50 cycles before to 500 cycles after the termination of the test, the sample units shall be
removed from the specified test conditions and allowed to reach room ambient test conditions. Specified end-point
measurements for qualification and conformance inspection shall be completed within 96 hours after removal of
sample units from the specified test conditions. Additional readings may be taken at the discretion of the
manufacturer.
4.5.5 Peak reverse power characterization. The testing to characterize PRM shall be conducted in accordance with
method 4065 of MIL-STD-750. The following details shall apply:
a. During the test, the voltage (VBR) shall be monitored to verify it has not collapsed.
b. Any collapse in VBR during or after the test, or rise in leakage current (IR) after the test that exceeds IR1 in
table I, shall be considered a failure to that level of applied PRM.
c. Progressively higher levels of PRM shall be applied until failure occurs on all devices within the chosen
sample size to characterize each sublot.
4.6 Element evaluation of unencapsulated die. The element evaluation of unencapsulated die shall be in
accordance with appendix G of MIL-PRF-19500. For subgroup G3, the test samples shall be assembled in a DO-4
package.
MIL-PRF-19500/304F
12
TABLE I. Group A inspection.
Inspection 1/ MIL-STD-750 Symbol Limits Unit
Method Conditions Min Max
Subgroup 1
Visual and mechanical
inspection
2071
Subgroup 2
Thermal impedance
3101
See 4.3.2
Z
θJX
°C/W
Forward voltage
4011
Condition B, tp < 8.3 ms,
duty cycle < 2 percent pulse
IF = 38 A(pk)
V
F2
1.5
V dc
Reverse current
4016
DC method, V
R
= rated V
R
(see 1.3)
I
R1
10
µA dc
Insulation resistance (case to
stud) applicable only to
1016
Test condition C, see 4.5.3
R
ISO
109
Ohms
1N3885, 1N3885A
1N3886, 1N3886A
1N3888, 1N3888A
Subgroup 3
High temperature operation:
T
A
= T
C
= 150°C
Reverse current
4016
DC method V
R
= rated V
R(pk)
(see 1.3)
I
R2
2
mA dc
Subgroups 4 and 5
Not applicable
Subgroup 6 2/
Forward voltage
4011
Condition B, I
F
= I
FS
; tp = 800 µs
V
F1
2.75
V dc
Forward voltage
4011
Condition B, I
F
= I
FS
; tp = 8.3 ms
V
F1
2.55
V dc
Subgroup 7
ns
Reverse recovery time
4031
T
C
= 55°C; I
F
= 1 A dc; V
R
= 30 V
dc, di/dt = -25 A/µs;
Ir(rec) 2 A (pk)
t
rr
Non A version
200
A-versions
150
1/ For sampling plan, see MIL-PRF-19500.
2/ VF1 shall be performed with either tp = 800 µs or tp = 8.3 ms.
MIL-PRF-19500/304F
13
TABLE II. Group E inspection (all quality levels) for qualification and requalification only.
Inspection MIL-STD-750 Sampling
plan
Method Conditions
Subgroup 1
45 devices,
c = 0
Thermal shock
1056
C to 100°C, 100 cycles
Hermetic seal
1071
Electrical
measurements
See table I subgroup 2 and table III herein
Subgroup 2
45 devices,
c = 0
Steady-state dc
blocking life
1038
Condition A; 1,000 hrs
Electrical
measurements
See table I subgroup 2 and table III herein. (Except Z
θJX
need
not be performed)
Subgroup 4
Thermal impedance
curves
See MIL-PRF-19500
Subgroup 5
22 devices,
c = 0
Barometric pressure,
reduced (altitude
operation)
1001
Hg = rated Hg (see 1.3), t = 60 s, while the test is being
performed, IR shall be monitored and shall not exceed 25 µ dc.
TC = 25°C
Subgroup 6
ESD
1020
Subgroup 8
45 devices
Peak reverse power
4065
P
RM
shall be characterized by the supplier and this data shall be
available to the Government. The test (see 4.5.5) shall be
performed on each sublot.
Electrical
measurements
See 4.5.5
Subgroup 10
22 devices,
c = 0
Forward surge
4066
Condition A, ten surges of 8.3 ms each at 1 minute intervals,
VRWM = rated VRWM (see 1.3). TC = +100°C. Non-A version
devices, IFS = 150 A; IO = 12 A dc; A version devices,
IFS = 225 A; IO = 20 A dc
MIL-PRF-19500/304F
14
TABLE III. Groups B and C delta electrical measurements. 1/ 2/ 3/ 4/ 5/
Step Inspection MIL-STD-750 Symbol Limits Unit
Method Conditions Min Max
1
Thermal response
3101
See 4.3.2, R
θJC
= rated R
θJC
(see 1.4)
ΔV
F
mV dc
2.
Forward voltage
4011
Condition B, I
F
= 50 mA dc
ΔV
F3
+50 mV dc maximum
change from previous to
post intermittent life and
thermal shock
measurement tests (JANS
only).
3.
Reverse current
4016
DC method, V
R
= rated V
R
(dc)
(see 1.3)
ΔI
R1
100 percent or ±5 µA,
(whichever is greater)
change from initial group A
reading.
1/ Devices which exceed the group A limits for this test shall be rejected.
2/ The delta measurements for table E-VIA (JANS) of MIL-PRF-19500 are as follows:
a. Subgroup 3, see table III herein, steps 1 and 2.
b. Subgroup 4, see table III herein, steps 1 and 2.
c. Subgroup 5, see table III herein, step 3.
3/ The delta measurements for table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 are as follows:
a. Subgroup 3, see table III herein, step 1.
4/ The delta electrical measurements for table E-VII of MIL-PRF-19500 are as follows:
a. Subgroup 2, see table III herein, step 1.
b. Subgroup 6, see table III herein, steps 1 and 3 (JANS); and step 1 (JAN, JANTX, and JANTXV).
5/ The delta electrical measurements for table E-IX of MIL-PRF-19500 are as follows:
a. Subgroup 1, see table III herein, step 1.
b. Subgroup 2, see table III herein, step 3.
MIL-PRF-19500/304F
15
FIGURE 4. Maximum case temperature in °C.
MIL-PRF-19500/304F
16
FIGURE 5. Thermal impedance graph RθJC for non isolated A type devices.
Maximum Thermal Impedance
0.01
0.1
1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 110
Time (s)
Theta (C/ W )
JAN1N3893A ss304 with 132x132 Chip, Tc=25C
Maximum Thermal Impedance
MIL-PRF-19500/304F
17
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements should be as specified in the contract or
order (see 6.2). When packaging of material is to be performed by DoD personnel, these personnel need to contact
the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are
maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or
within the Military Departments' System Command. Packaging data retrieval is available from the managing Military
Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible
packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
The notes specified in MIL-PRF-19500 are applicable to this specification.
6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design
applications and logistic support of existing equipment.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a. Title, number, and date of this specification.
b. Packaging requirements (see 5.1).
c.Lead finish (see 3.4.1).
d. The complete PIN, see 1.5 and 6.4.
e. For die acquisition, the letter version should be specified (see 1.5.6 and figure 3).
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,
at the time of award of contract, qualified for inclusion in Qualified Manufacturer's List (QML-19500) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for
the products covered by this specification. Information pertaining to qualification of products may be obtained from
DLA Land and Maritime, ATTN: VQE, Columbus, OH 43216 or e-mail vqe.chief@dla.mil. An online listing of
products qualified to this specification may be found in the Qualified Products Database (QPD) at
https://qpldocs.dla.mil.
6.4 PIN construction examples.
6.4.1 The PINs are constructed using the following form.
JANS 1N 3893 R
JAN certification mark and quality level (see 1.5.1)
First number and first letter symbols (see 1.5.2.1)
Second number symbols (see 1.5.2.2)
Suffix symbols for polarity or
electrical modified devices (see 1.5.3)
MIL-PRF-19500/304F
18
6.4.2 Unencapsulated die. The PINs for unencapsulated die are constructed using the following form.
JANHC A 1N 3893
JAN certification mark and quality level (see 1.5.1.2)
Die identifier for unencapsulated devices (see 1.5.6)
First number and first letter symbols (see 1.5.2.1)
Second number symbols (see 1.5.2.2)
6.5 List of PINs.
6.5.1 Encapsulated devices. The following is a list of possible PINs available for encapsulated devices covered by
this specification sheet.
PINs for devices in a DO-10 package
JAN1N3885
JANTX1N3885
JANTXV1N3885
JANS1N3885
JAN1N3885A JANTX1N3885A JANTXV1N3885A JANS1N3885A
JAN1N3886 JANTX1N3886 JANTXV1N3886 JANS1N3886
JAN1N3886A JANTX1N3886A JANTXV1N3886A JANS1N3886A
JAN1N3888 JANTX1N3888 JANTXV1N3888 JANS1N3888
JAN1N3888A JANTX1N3888A JANTXV1N3888A JANS1N3888A
PINs for devices in a DO-4 package
JAN1N3890
JANTX1N3890
JANTXV1N3890
JANS1N3890
JAN1N3890R JANTX1N3890R JANTXV1N3890R JANS1N3890R
JAN1N3890A JANTX1N3890A JANTXV1N3890A JANS1N3890A
JAN1N3890AR JANTX1N3890AR JANTXV1N3890AR JANS1N3890AR
JAN1N3891 JANTX1N3891 JANTXV1N3891 JANS1N3891
JAN1N3891R JANTX1N3891R JANTXV1N3891R JANS1N3891R
JAN1N3891A
JANTX1N3891A
JANTXV1N3891A
JANS1N3891A
JAN1N3891AR
JANTX1N3891AR
JANTXV1N3891AR
JANS1N3891AR
JAN1N3893 JANTX1N3893 JANTXV1N3893 JANS1N3893
JAN1N3893R
JANTX1N3893R
JANTXV1N3893R
JANS1N3893R
JAN1N3893A JANTX1N3893A JANTXV1N3893A JANS1N3893A
JAN1N3893AR JANTX1N3893AR JANTXV1N3893AR JANS1N3893AR
MIL-PRF-19500/304F
19
6.5.2 Unencapsulated die. The following is a list of possible PINs for unencapsulated die available on
this specification sheet.
Quality level
JANHC
Quality level
JANKC
JANHCA1N3885 JANKCA1N3885
JANHCA1N3886 JANKCA1N3886
JANHCA1N3888 JANKCA1N3888
JANHCA1N3890
JANKCA1N3890
JANHCA1N3891
JANKCA1N3891
JANHCA1N3893 JANKCA1N3893
6.6 Supersession data. The following types were superseded through a previous revision of this specification and
the cancellation of MIL-S-19500/266. A-version devices may be substituted for non A-version devices. Applicable
substitutes are as follows:
Substitute PIN as
specified within
Superseded types identified
by but not listed on
Superseded PIN that were
specified within
Superseded PIN that were
specified within
MIL-S-19500/304C, dated
6 June 1989
MIL-S-19500/304B, dated
14 September 1982
MIL-S-19500/304(EL),
dated 21 September 1964
MIL-S-19500/266B, dated
23 September 1966
1N3885
1N3874
1N3884
1N3875
1N3886
1N3876
1N3888
1N3877
1N3887
1N3878
1N3890
1N3879
1N3889
1N3880
1N3890R
1N3879R
1N3889R
1N3880R
1N3891
1N3881
1N3891R
1N3881R
1N3893
1N3882
1N3892
1N3883
1N3893R
1N3882R
1N3892R
1N3883R
NOTE: Superseded types should not be used for new design.
6.7 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter
version (example JANHCA1N3885) will be identified on the QML.
JANHC and JANKC ordering information
PIN (1) (2) Manufacturer
43611
1N3885
JANHCA1N3885
1N3886
1N3888
1N3890
1N3891
JANHCA1N3886
JANHCA1N3888
JANHCA1N3890
JANHCA1N3891
1N3893
JANHCA1N3893
(1) Also applies to "A" suffix devices.
(2) For JANS level, replace "JANHC" prefix with "JANKC".
MIL-PRF-19500/304F
20
6.8 Request for new types and configurations. Requests for new device types or configurations for inclusions in
this specification sheet should be submitted to: DLA Land and Maritime, ATTN: VAC, Post Office Box 3990,
Columbus, OH 43218-3990 or by electronic mail at Semiconductor@dla.mil or by facsimile (614) 693-1642 or
DSN 850-6939.
6.9 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect
to the previous issue due to the extent of the changes.
Custodians: Preparing activity:
Army - CR DLA - CC
Navy - EC
Air Force - 85 (Project 5961-2019-036)
NASA - NA
DLA - CC
Review activities:
Army - AR, MI, SM
Navy - AS, MC
Air Force - 19
NOTE: The activities listed above were interested in this document as of the date of this document. Since
organizations and responsibilities can change, you should verify the currency of the information above using the
ASSIST Online database at https://assist.dla.mil.