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NPN Silicon Epitaxial
Planar Transistor
Features:
• Epitaxial planar die construction
• Complementary PNP type available:
MMBT4403
• Idealformediumpoweramplicationand
switching
Applications:
• General purpose application, switching
application
Parameter Symbol Value Units
Collector-Base Voltage VCBO 60
VCollector-Emitter Voltage VCEO 40
Emitter-Base Voltage VEBO 6
Collector Current -Continuous IC600 mA
Collector Power Dissipation PC350 mW
Junction and Storage Temperature Tj, Tstg -55 to +150 °C
Maximum Rating @ Ta = 25°C unless otherwise specied
Electrical Characteristics @ Ta = 25°C unless otherwise specied
Parameter Symbol Test conditions Min. Typ. Max. Unit
Collector-Base Breakdown Voltage V(BR)CBO IC =100μA,IE = 0 60
VCollector-Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 40
Emitter-Base Breakdown Voltage V(BR)EBO IE =100μA,IC = 0 6