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Page <1> V1.012/09/14
NPN Silicon Epitaxial
Planar Transistor
Features:
• Epitaxial planar die construction
• Complementary PNP type available:
MMBT4403
• Idealformediumpoweramplicationand
switching
Applications:
• General purpose application, switching
application
Parameter Symbol Value Units
Collector-Base Voltage VCBO 60
VCollector-Emitter Voltage VCEO 40
Emitter-Base Voltage VEBO 6
Collector Current -Continuous IC600 mA
Collector Power Dissipation PC350 mW
Junction and Storage Temperature Tj, Tstg -55 to +150 °C
Maximum Rating @ Ta = 25°C unless otherwise specied
Electrical Characteristics @ Ta = 25°C unless otherwise specied
Parameter Symbol Test conditions Min. Typ. Max. Unit
Collector-Base Breakdown Voltage V(BR)CBO IC =100μA,IE = 0 60
VCollector-Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 40
Emitter-Base Breakdown Voltage V(BR)EBO IE =100μA,IC = 0 6
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NPN Silicon Epitaxial
Planar Transistor
Parameter Symbol Test conditions Min. Typ. Max. Unit
Collector Cut-Off Current ICEX VCE = 35V, VEB = 0.4V
0.1 μA
Base Cut-Off Current IBL VCE = 35V, VEB = 0.4V
DC Current Gain hFE
VCE = 1V, IC = 0.1mA
VCE = 1V, IC = 1mA
VCE = 1V, IC = 10mA
VCE = 1V, IC = 150mA
VCE = 2V, IC = 500mA
20
40
80
100
40
300
Collector-Emitter Saturation Voltage VCE(sat)
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
0.4
0.75
V
Base-Emitter Saturation Voltage VBE(sat)
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA 0.75 0.95
1.2
Transition Frequency fT
VCE = 10V, IC = 20mA
f =100MHz 250 MHz
Collector Output Capacitance Cob
VCB = 5V, IE = 0,
f = 1MHz 6.5 pF
Typical Characteristics @ Ta = 25°C unless otherwise specied
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Page <3> V1.012/09/14
NPN Silicon Epitaxial
Planar Transistor
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Page <4> V1.012/09/14
NPN Silicon Epitaxial
Planar Transistor
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Part Number Table
Description Part Number
Transistor, Bipolar, NPN, 40V, 600mA,
SOT-23 MMBT4401-7-F
Plastic Surface Mounted Package:
SOT-23
Dim Min Max
A 2.85 2.95
B 1.25 1.35
C1 Typical
D 0.37 0.43
E 0.35 0.48
G 1.85 1.95
H 0.02 0.1
J0.1 Typical
K 2.35 2.45
All Dimensions in mm
Soldering Footprint:
