Dimensions in inches and (millimeters)
- 176 - Version: C08
ES1AL - ES1JL
1.0 AMP. Surfa ce Mount Super Fa st Rectif iers
Sub SMA
Features
For surface mounted application
Low profile package
Low power loss, high efficiency,
Ideal for automated placement
Glass passivated chip junction
High temperature sold ering:
260
OC/10 seconds at terminals
Mechanical Data
Cases: Sub SMA plastic case
Terminal : Pure tin plated, lead free.
Polarity: Color band cathode end
Packing: 12m m tape per EIA STD RS-481
Weight: approx. 15mg
Ma rking: As be lo w table
Maximum Ratings and Electrical Characteristics
Rating at 25 O C am bient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number Symbol
ES
1AL
ES
1BL
ES
1CL
ES
1DL
ES
1FL
ES
1GL
ES
1HL
ES
1JL
Units
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 300 400 500 600 V
Maximum RM S Voltage VRMS 35 70 105 140 210 280 350 420 V
Maximum DC B locking Voltage VDC 50 100 150 200 300 400 500 600 V
Marking Code EALYM EBLYM ECLYM EDLYM EFLYM EGLYM EHLYM EJLYM
Maximum Avera
g
e Forward Rectified Current
See Fig. 1 I(AV) 1.0 A
Peak Forward Sur
g
e Current, 8.3 ms Sin
g
le
Half Sine-wave Superim
p
osed on Rated
Load (JEDEC method )
IFSM 30 A
Maximum Instantaneous Forward Voltage
@ 1.0A VF 0.95 1.3 1.7 V
Maximum DC Reverse Current @ TA =25 oC
at Rated DC Blocking Voltage @ TA=100oC IR 5.0
100 uA
uA
Maximum R e verse R ecovery Time ( Note 1 ) Trr 35 nS
Typical Junction Capacitance ( Note 2 ) Cj 10 8 pF
Maximum Therm al Resistance (Note 3)
RθJA
RθJL 85
35
oC/W
Operating Temperature Range TJ -55 to +150 oC
Storage Temperature Range TSTG -55 to +150 oC
Notes: 1. R eve rse R e covery T est C on ditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Vo lts
3. P.C.B. Mounted on 0.2 x 0.2” (5.0 x 5.0mm ) Copper Pad Area.
RATINGS AND CHARACTERISTIC CURVES (ES1AL THRU ES1JL)
FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT. (A)
110 100
30
20
10
5.0
25
15
NUMBER OF CYCLES AT 60Hz
8.3ms Single Half Sine Wave
(JEDEC Method) at T =120 C
Lo
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
AVERAGE FORWARD CURRENT. (A)
80 90 100 120 140 150130110
0
0.2
0.6
0.8
1.2
1.0
0.4
LEAD TEMPERATURE. ( C)
o
0.2X0.2"(5.0X5.0mm)
COPPER PAD AREAS
1
0
0
10 100
14
10
6.0
4.0
2.0
12
8.0
FIG.4- TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE.(pF)
REVERSE VOLTAGE. (V)
ES1AL - ES1DL
ES1FL - ES1JL
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
0
FIG.5- TYPICAL REVERSE CHARACTERISTICS
020 40 60 80 100 120 140
10
100
1000
1
0.1
0.01
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
Tj=125 C
0
Tj=85 C
0
Tj=25 C
0
INSTANTANEOUS REVERSE CURRENT.( A)
FIG.2- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT. (A)
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.01
1
10
50
0.1
FORWARD VOLTAGE. (V)
ES1FL - ES1GL
Tj=25 C
PULSE WIDTH-300 S
1% DUTY CYCLE
0
ES1HL - ES1JL
Version: C08
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
DUT
(+)
50Vdc
(approx)
(-)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
(-)
(+)
10W
NONINDUCTIVE
-1.0A
-0.25A
0
+0.5A
trr
1cm SET TIME BASE FOR
5/ 10ns/ cm
RESISTIVE OR
INDUCTIVE LOAD
ES1AL - ES1DL
