GC4701 - GC4750
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
CONTROL DEVICES – LIMITER DIODES
TM ®
www.MICROSEMI.com
Copyright 2006
Rev: 2009-01-19
RoHS Com
liant
0BDESCRIPTION
The GC4700 series diodes are specially processed PIN diodes designed
for use in passive or active limiters at frequencies through Ku band.
Thirteen categories of devices are offered for flexibility in design of low,
medium and high power limiters.
Low VB limiters have thinner I regions for faster turn-on time and better
flat leakage. Microsemi also manufactures “gold doped” limiters for fastest
turn on time. In addition, we manufacture high voltage dual junction
limiters for superior peak and CW power handling.
This series of diodes meets RoHS requirements per EU Directive
2002/95/EC.
APPLICATIONS
A diode limiter is a power-sensitive variable attenuator that uses the non-linear
properties of the diode to provide an impedance mismatch when sufficient amounts
of RF power are incident on the device. The output power is reduced to a level that
will not overdrive a receiver, burn out a mixer, etc. For varying input power levels in
excess of the diode’s threshold level, the limiter’s output power tends to remain
constant.
A passive limiter is one in which the limiter diodes are “turned on” by the RF signal
itself. An active limiter is one in which the limiter diodes are “turned on” primarily by
an external bias current typically supplied by a Schottky detector diode which
senses the incident signal.
Since limiter diodes are not designed to dissipate large amounts of power, the
limiter must reflect or divert the excess incident power back to the source or to
another load (i.e. via a circulator, hybrid coupler, etc.).
Limiter diodes may be used in wave guides, coax, microstrip, stripline or other
media. Single or cascaded devices may be used, depending on power levels.
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value Unit
Maximum Leakage Current
@80% of minimum Rated Vb Ir 0.5 uA
Operating Temperature T op -55 to +150 ºC
Storage Temperature T stg -65 to +150 ºC
IMPORTANT: For the most current data, consult our website: HUwww.MICROSEMI.comU
Specifications are subject to change, consult the factory for further information.
These devices are ESD sensitive and must be handled using ESD precautions.
KEY FEATURES
Available as packaged devices or
as chips for hybrid applications
Low Loss
Suitable for applications to
18Ghz
Excellent flat leakage
performance
Low 1 dB compression point
Gold Doped Diodes for Fast Turn
On
RoHS Compliant1
1 Most or our devices are supplied with
Gold plated terminations. Other
terminal finishes are available on
request. Consult factory for details.
APPLICATIONS/BENEFITS
Receiver protection circuits
Amplifier Protection
GC4701 - GC4750