FAIRCHILD SEMICONDUCTOR 84 pe BP syesn74 ooezaas y r IRF430-433/IRF830-833 meee FAIRCHILD MTM/MTP4N45/4N50 A Schlumberger Company N-Channel Power MOSFETs, 4.5 A, 450 V/500 V Power And Discrete Division T-39-11 Description TO-204AA TO-220AB These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed S applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. Ves Rated at +20 V ? S @ Silicon Gate for Fast Switching Speeds sacente e {pss Vpsjon), SOA and Vagsan) Specified at Elevated IRF430 IRFe30 emperature Rugged IRF431 {RF831 | IRF432 IRF832 IRF433 IRF833 MTM4N45 MTP4N45 . . MTM4N50 MTP4N50 Maximum Ratings ' Rating Rating i IRF430/432 IRF431/433 : IRF830/832 IRF831/833 Symbol Characteristic MTM/MTP4N50 MTM/MTP4N45 Unit Voss Drain to Source Voltage 500 450 Vv Voar Drain to Gate Voltage 500 450 Vv Res = 20 kQ Vas Gate to Source Voltage +20 20 Vv Ty, Tstg | Operating Junction and -55 to +150 ~55 to +150 C Storage Temperature Th Maximum Lead Temperature 275 275 C tor Soldering Purposes, 1/8" From Case for 5 s Maximum On-State Characteristics IRF430/431 IRF432/433 MTM/MTP4N45 {RF830/831 IRF832/833 MTM/MTP4N45 Roscen) Static Drain-to-Source 16 2.0 15 Q On Resistance Ib Drain Current A : Continuous 4.5 4.0 4.0 i Pulsed 18 16 10 | Maximum Thermal Characteristics : Rac Thermal Resistance, 1.67 1.67 1.67 C/W i Junction to Case Rasa Thermal Resistance, 60 60 60 C/W Junction to Ambient Pp Total Power Dissipation 75 75 75 Ww at Tc = 25C Notes For information concerning connection diagram and package outkne, refer to Section 7. 2-132FAIRCHILD SEMICONDUCTOR 84 de ff syean74 OoOe7 ted 4 Tr IRF430-433/IRF830-833 T-39-11 ' t Electrical Characteristics (Tc = 25C unless otherwise noted) Symbol Characteristic | Min | Max | Unit | Test Conditions Off Characteristics Vieryoss | Drain Source Breakdown Voltaget v Vas =0 V, Ip = 250 vA IRF430/432/830/832 500 IRF431/433/831/833 450 loss Zero Gate Voltage Drain Current 250 BA Vps = Rated Voss, Ves = 0 V 1000 BA Vos = 0.8 x Rated Voss, Vas =0 V, Tce = 125C lass Gate-Body Leakage Current nA Ves = 20 V, Vos =0 V IRF430-433 +100 IRF830-833 +600 On Characteristics Vesth Gate Threshold Voltage 2.0 4.0 Vv Ip = 250 vA, Vos = Vas ' Rpgvon) Static Drain-Source On-Resistance 2 Vag=10 V, Ip=25A 1 IRF430/431 /830/831 1.5 IRF432/433/832/833 2.0 Sts Forward Transconductance 2.5 S$ 5) Vps = 10 V, Ip=25A Dynamic Characteristics Ciss Input Capacitance 800 pF Vos = 25 V, Vas=0 V Coss Output Capacitance 200 pF f= 1.0 MHz Ciss Reverse Transfer Capacitance 60 pF Switching Characteristics (Tc = 25C, Figures 12, 13) tajon) Turn-On Delay Time 30 ns Vop = 225 V, Ip=25A tr Rise Time 30 ns Res = . % Reen = 15 2 tarotfy Turn-Off Detay Time 5 ns tf Fall Time 30 ns Qg Total Gate Charge 30 nc Vas =10 V, Ip=7.0 A Vos = 180 V Symbol Characteristic Typ Max Unit Test Conditions Source-Drain Diode Characteristics Vsp Diode Forward Voltage IRF430/431/830/831 1.4 v is =4.5 A; Veg =0 V IRF432/433/832/833 4.3 Vv Ig = 4.0 A; Veg =0 V tr Reverse Recovery Time 600 ns Ig =4.5 A; dig/dt= 100 A/uS Notes 1. Ty = 425C to + 150C 2. Pulse test: Pulse width <80 ps, Duty cycle <1% 2-133FAIRCHILD SEMICONDUCTOR &y pe s4e9n74 O027%e1 O I MTM/MTP4N45/4N50 T~39-11 Electrical Characteristics (To = 25C unless otherwise noted) ee errs Symbol! Characteristic | Min | Max Unit | Test Conditions | Off Characteristics Vierypss | Drain Source Breakdown Voltage Vv Ves =0 V, Ip = 5.0 mA MTM/MTP4N50 500 MTM/MTP4N45 450 Ipss Zero Gate Voltage Drain Current 0.25 mA Vps = 0.85 x Rated Voss, Veg =0 V 25 mA Vps = 0.85 x Rated Voss. Veg = 0 V, To = 100C lass Gate-Body Leakage Current +500 nA Ves.= 20 V, Vps=0 V : On Characteristics * a : Vasah) Gate Threshold Voltage 2.0 45 Vv Ip = 1.0 mA, Vos = Vas : 1.5 4.0 V Ip = 1.0 mA, Vos = Ves. : \ To = 100C Rosier) | Static Drain-Source On-Resistance 15 a Vas = 10 V, Ip=2.0 A Voson) | Drain-Source On-Voltage? 3.0 V Ves = 10 V, Ip=2.0 V 7.0 Vv Veg =10 V, Ip=4.0 A 6.0 Vv Vag = 10 V, Ip=4.0A To = 100C Gs Forward Transconductance 2.0 S @&) Vps = 10 V, Ip=20A Dynamic Characteristics Ciss Input Capacitance 1200 pF Vos = 25 V, Vas = 0 V Coss Output Capacitance 300 pF f= 1.0 MHz Criss Reverse Transfer Capacitance 80 pF Switching Characteristics (7. c= 25C, Figures 12, 13/8 taron) Turn-On Delay Time 50 ns Vpp = 25 V, Ip =2.0 A t Rise Time 400 rs | oS 10 V. Roan = 60 82 taoth Turn-Off Delay Time 200 ns tr Fali Time 100 ns Qg Total Gate Charge 60 nc Veg = 10 V, Ip=7.0 A Vop = 180 V Notes 1. TJ =+25C to + 150C 2, Pulse test: Pulse width <80 ps, Duty cycle <1% 3. Switching time measurements performed on LEM TR-58 test equipment. 2-134FAIRCHILD SEMICONDUCTOR au DEB aynae74 ooezdze 1 i IRF430-433/IRF830-833 MTM/MTP4N45/4N50 T-39-11 Typical Performance Curves Figures 4-6 for IRF 432/433/832/833 only. Figure 2 Static Drain to Source Resistance vs Drain Current Figure 1 Output Characteristics IpDRAIN CURRENTA eo 0 4 6 12a 16 a Vps-DRAIN TO SOURCE VOLTAGEV PqIOTSoF Figure 3 Transfer Characteristics 7 Vps = 10V 6 5 ipDRAIN CURRENTA T= - o 1 2 3 4 5 6 7 8 VasGATE TO SQUACE VOLTAGEV Fo.gs1cF Figure 5 Static Drain to Source On Resistance vs Drain Current Ras (onj-STATIC DRAIN TO SOURCE RESISTANCE 2 o 2 4 6 8 10 ip~ DRAIN CURRENT=A Pciceocr Figure 4 Output Characteristics 7 Te 5 Ip DRAIN CURRENTA 40Vv Q 0 4 8 1Z 6 20 Vos DRAIN TO SOURCE VOLTAGEV PCaZoe Figure 6 Transfer Characteristics 7 Vas = 20V 6 | w eo = & 5 fs a z S Zz 4 8 E g 3 & z 4 5 Toa = oa = a L 1 a 0 o 2 4 6 8 10 2 3 4 5 6 7 8 9 Ip DRAIN CURRENTA Vas) GATE TO SOURCE VOLTAGE 11 POICatF POSS: 2.135 es re ge oeFAIRCHILD SEMICONDUCTOR ay Def syeab74 ooz7aay 5 ff IRF430-433/IRF830-833 MTM/MTP4N45/4N50 7-39-11 Typical Electrical Characteristics Figure 12 Switching Test Circuit Vin Yoo 1 AL PULSE GENERATOR Vout 1 eewmemeiee Figure 13 Switching Waveforms OUTPUT, Vout {INVERTED (NPUT, Vin 50% S0% 10% PULSE WIDTH wrogeogr 2-137 oe em net