For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - SMT
1
HMC637LP5/637LP5E
v03.1213
GAAS MESFET MMIC 1 WATT
Power Amplifier, DC - 6 GHz
General Description
Features
Functional Diagram
Typical Applications
The HMC637LP5(E) is a GaAs MMIC MESFET
Distributed Power Amplier which operates bet-
ween DC and 6 GHz. The amplier provides 13 dB
of gain, +40 dBm output IP3 and +29 dBm of output
power at 1 dB gain compression while requiring 400
mA from a +12V supply. Gain atness is excellent at
±0.75 dB from DC - 6 GHz making the HMC637LP5(E)
ideal for EW, ECM, Radar and test equipment
applications. The HMC637LP5(E) amplier I/Os
are internally matched to 50 Ohms and the 5x5 mm
QFN package is compatible with high volume SMT
assembly equipment.
P1dB Output Power: +29 dBm
Gain: 13 dB
Output IP3: +40 dBm
50 Ohm Matched Input/Output
32 Lead 5x5mm Lead SMT Package: 25mm2
The HMC637LP5(E) wideband PA is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics
Electrical Specications, TA = +25° C, Vdd= +12V, Vgg2= +5V, Idd= 400 mA*
Parameter Min. Ty p. Max. Units
Frequency Range DC - 6 GHz
Gain 12 13 dB
Gain Flatness ±0.75 dB
Gain Variation Over Temperature 0.025 dB/ °C
Input Return Loss 12 dB
Output Return Loss 15 dB
Output Power for 1 dB Compression (P1dB) 27 29 dBm
Saturated Output Power (Psat) 29.5 dBm
Output Third Order Intercept (IP3) 40 dBm
Noise Figure 5dB
Supply Current (Idd) 320 400 480 mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 400 mA typical.
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - SMT
2
HMC637LP5/637LP5E
v03.1213
GAAS MESFET MMIC 1 WATT
Power Amplifier, DC - 6 GHz
Output Return Loss vs. Temperature
Gain & Return Loss Gain vs. Temperature
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
Noise Figure vs. Temperature
2
4
6
8
10
12
02468
+25C
+85C
-40C
NOISE FIGURE (dB)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
02468
+25C
+85C
-40C
ISOLATION (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
02468
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
02468
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
02468
+25C
+85C
-40C
GAIN (dB)
FREQUENCY (GHz)
-30
-20
-10
0
10
20
02468
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - SMT
3
HMC637LP5/637LP5E
v03.1213
GAAS MESFET MMIC 1 WATT
Power Amplifier, DC - 6 GHz
P1dB vs. Temperature Psat vs. Temperature
Output IP3 vs. Temperature
Gain, Power & Output IP3 vs.
Supply Voltage @ 3 GHz, Fixed Vgg
20
22
24
26
28
30
32
02468
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
20
22
24
26
28
30
32
02468
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
10
15
20
25
30
35
40
45
11.5 12 12.5
Gain
P1dB
Psat
IP3
Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
Vdd (V)
20
25
30
35
40
45
50
55
60
02468
+25C
+85C
-40C
IP3 (dBm)
FREQUENCY (GHz)
Gain & Return Loss vs. Frequency,
Log Scale
Output IP3 vs. Temperature,
Log Scale
-30
-20
-10
0
10
20
0.01 0.1 1 10
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
20
25
30
35
40
45
50
55
60
0.01 0.1 1 10
+25C
+85C
-40C
IP3 (dBm)
FREQUENCY (GHz)
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - SMT
4
HMC637LP5/637LP5E
v03.1213
GAAS MESFET MMIC 1 WATT
Power Amplifier, DC - 6 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +14 Vdc
Gate Bias Voltage (Vgg1) -3 to 0 Vdc
Gate Bias Voltage (Vgg2) +4 to +7 Vdc
RF Input Power (RFIN)(Vdd = +12 Vdc) +25 dBm
Channel Temperature 150 °C
Continuous Pdiss (T= 85 °C)
(derate 87 mW/°C above 85 °C) 5.7 W
Thermal Resistance
(channel to ground paddle) 11.5 ° C / W
Storage Temperature -65 to 150 °C
Operating Temperature -40 to 85 °C
ESD Sensitivity (HBM) Class 1A
Vdd (V) Idd (mA)
11.5 373
12.0 400
12.5 425
Typical Supply Current vs. Vdd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - SMT
5
HMC637LP5/637LP5E
v03.1213
GAAS MESFET MMIC 1 WATT
Power Amplifier, DC - 6 GHz
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PAT TERN.
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC637LP5 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H637
XXXX
HMC637LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H637
XXXX
[1] Max peak reow temperature of 235 °C
[2] Max peak reow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
Outline Drawing
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - SMT
6
HMC637LP5/637LP5E
v03.1213
GAAS MESFET MMIC 1 WATT
Power Amplifier, DC - 6 GHz
Pin Descriptions
Pin Number Function Description Interface Schematic
1, 3, 4, 6 - 12,
14, 17, 18, 19,
20, 22 - 28,
31, 32
N/C No connection. These pins may be connected to RF
ground. Performance will not be affected.
2 Vgg2
Gate Control 2 for amplier. +5V should be applied to
Vgg2 for nominal operation. Attach bypass capacitor
per application circuit herein.
5 RFIN This pad is DC coupled
and matched to 50 Ohms.
13 Vgg1
Gate Control 1 for amplier. Attach bypass capacitor
per application circuit herein. Please follow “MMIC
Amplier Biasing Procedure” Application Note.
15 ACG4
Low frequency termination. Attach bypass capacitor
per application circuit herein.
16 ACG3
21 RFOUT & Vdd
RF output for amplier. Connect the DC
bias (Vdd) network to provide drain current (Idd).
See application circuit herein.
29 ACG2 Low frequency termination. Attach bypass capacitor
per application circuit herein.
30 ACG1
Ground
Paddle GND Ground paddle must be connected to RF/DC ground.
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - SMT
7
HMC637LP5/637LP5E
v03.1213
GAAS MESFET MMIC 1 WATT
Power Amplifier, DC - 6 GHz
Application Circuit
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network.
NOTE 2: Power Up Bias Sequence
A) Set Vgg1 to -2V
B) Set Vdd to +12V
C) Set Vgg2 to +5V
D) Adjust Vgg1 to achieve Idd for 400 mA
Power Down Sequence
A) Remove Vgg2 Bias
B) Remove Vdd Bias
C) Remove Vgg1 Bias
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - SMT
8
HMC637LP5/637LP5E
v03.1213
GAAS MESFET MMIC 1 WATT
Power Amplifier, DC - 6 GHz
Evaluation PCB
The circuit board used in the application should
use RF circuit design techniques. Signal lines
should have 50 Ohm impedance while the package
ground leads and package bottom should be
connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
List of Materials for Evaluation PCB 108347 [1]
Item Description
J1 - J2 SRI SMA Connector
J3 - J4 2mm Molex Header
C1, C2 100 pF Capacitor, 0402 Pkg.
C3 - C6 1000 pF Capacitor, 0603 Pkg.
C7 - C9 4.7 µF Capacitor, Tantalum
U1 HMC637LP5 / 637LP5E
PCB [2] 109765 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
