International TOR Rectifier Description Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated PD - 9.1383A IRFPO64N HEXFET Power MOSFET D Voss = 55V Rpscon) = 0.0080 Ip = 110A Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design from which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Absolute Maximum Ratings TO-247 Parameter Max. Units Ip @ Te = 25C Continuous Drain Current, Vag @ 10V 110 lp @ To = 100C} Continuous Drain Current, Veg @ 10V 80 A lom Pulsed Drain Current O 390 Pp @To = 25C Power Dissipation 200 Ww Linear Derating Factor 1.3 wre Ves Gate-to-Source Voltage +20 Vv Eas Single Pulse Avalanche Energy @ 480 mJ lar Avalanche Current 59 A Ear Repetitive Avalanche Energy 20 mJ dv/dt Peak Diode Recovery dv/dt @ 5.0 Vins Ty Operating Junction and -+55 to+175 Tste Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 tbfein (1.1Nem) Thermal Resistance Parameter Typ. Max. Units Resc Junction-to-Case _ 0.75 Recs Case-to-Sink, Flat, Greased Surface 0.24 C/W Resa Junction-to-Ambient _ 40 www.irf.com C-375 IRFPOG4N International TOR Rectifier Electrical Characteristics @ T, = 25C (unless otherwise specified) Parameter Min. | Typ.| Max. | Units Conditions Vierypss Drain-to-Source Breakdown Voltage 65 | | Vo} Ves = OV, Ip = 250pnA AVrpss/ATy| Breakdown Voltage Temp. Coefficient} |0.067) | V/C| Reference to 25C, ip = IMA Rosion) Static Drain-to-Source On-Resistance| ~~ 10.008] Q | Vas=10V, ip =59A Vesth) Gate Threshold Voltage 2.0 | | 4.0 V- | Vos = Vas, Ip = 250A Gts Forward Transconductance 42 | S | Vps = 25V, Ip = 59A loss Drain-to-Source Leakage Current |= | 25 UA Vos = 58V, Vas = OV ~ ~ | 250 Vos = 44V, Ves = OV, Ty = 150C loss Gate-to-Source Forward Leakage _ | 100 nA Vas = 20V Gate-to-Source Reverse Leakage _ |-100 Vag = -20V Qg Total Gate Charge | | 170 Ip = 59A Qgs Gate-to-Source Charge _ | 32 nG | Vos = 44V Qga Gate-to-Drain ("Miller") Charge _ | 74 Vas = 10V, see figure 6 and 13 @ tayon) Turn-On Delay Time 45, Vop = 28V tr Rise Time | 100} ns Ip = S9A tavott) Turn-Off Delay Time _ 43, Re = 2.52 u Fall Time _ 7O > Rp = 0.390, see figure 10 Lb Intemal Drain Inductance ~~ 5.0; Between lead, ~ 6mm (0.25in.) (is \ nH je, *) Ls intemal Source inductance _ Wi from package ley and center of die contact 3 Ciss Input Capacitance |4000) Ves = OV Coss Output Capacitance |1300| pF | Vos = 25V Css Reverse Transfer Capacitance | 480} f = 1.0MHz, see figure 5 Source-Drain Ratings and Characteristics Parameter Min.| Typ.| Max. | Units Conditions Is Continuous Source Current _ | lt0 MOSFET symbol a 8 (Body Diode) - showing the Ism Pulsed Source Current _ | | 390 integral reverse 8 (Body Diode) p-n junction diode. 8 Vsp Diode Forward Voltage ~ | - 1 1.3 Vf Ty = 25C, Ig = 59A, Veg = OV ter Reverse Recovery Time | 110] 170] ns | Ty = 25C, ic = 59A Qe Reverse Recovery Charge | 450} 680 | nC | di/dt = 100A/us @G Notes: @ Repetitive rating; pulse width limited by max. junction & Uses IRF3205 data and test conditions temperature. (see figure 11) Vop = 25V, starting Ty = 25C, L = 190pH, Rg = 252, lag = 59A. (see Figure 12) Isp S$ 59A, di/dt < 290A/us, Vop < Viarypss;, Tys 175C Pulse width < 300s; duty cycle < 2%. 9 @ C-376 Caculated continuous current based on maximum allowable junction temperature; for recommended current handling of the package refer to Design Tip # 93-4 www.irf.com International TOR Rectifier 1006 5.0V | BOTTOM 4.8V 17 creek Ip , Drain-to-Source Current (A) e Bows PULSE WIDTH ' | Te = 28C 0.1 1 10 Vpg, Drain-to-Source Voltage (V) 100 Fig 1. Typical Output Characteristics 1000 _ Qo o ip, Drain-to-Source Current (A) 20ys PULSE WIDTH 4 5 6 7 g 9 10 Ves, Gate-to-Source Voltage (V} Fig 3. Typical Transfer Characteristics www.irf.com R psion) + Drain-to-Source On Resistance Ip , Drain-to-Source Current (A) IRFPO64N 1000 5.0V BOTTOM 4.8 7) wp ee | iat _ 2 2 ". 20us PULSE WIDTH. 3 To = 175C 16 Vpg. Drain-to-Source Voltage (V) 10 0.4 1 100 Fig 2. Typical Output Characteristics 2,0 Ip = 98A : \f : Yt 15 + wv ii | i t t . 1 s | LA = 1.0 ecient * E Lar | | i ee : = bef f-l i fe i ofa fl : \ 0.5 fe j++ : 0.0 beetle ti ged Vgs = 10V 60 -40 -20 6 20 40 60 80 100 120 140 160 180 T,; , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature C-377 IRFPO64N C, Capacitance (pF) Isp , Reverse Drain Current (A) 8000 es = OV, f= 1MHz iss = Cgs + Coa Cag SHORTED 7000 = 1s qd =Cyg + C 6000 * 000 4000 3000 2000 1000 1 10 Vos. Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 Ves =0V 18 2.2 2.6 Vep . Source-to-Drain Voltage (V) 4.0 1.4 3.6 Fig 7. Typical Source-Drain Diode Forward Voltage C-378 ip , Drain Current (A) International TOR Rectifier 20 Ip = 59A } : ~ - a bo Ving = 44V re = 16 Vpg = 28V |. > | Vos=tvVd y. | : i Jp the > | 4 @ 12 : pe . an ! Wf, 6% 4 - > : ~ FOR TEST CIRCUIT ne SEE FIGURE 13 0 30 60 90 420 150 189 Qg, Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 F==> OPERATION IN THIS AREA LIMITED? + a _- 7 BY Rpsyon) : oN Te = 25C - Ty = 178C" Single Pulse 1 10 Vos > Drain-to-Source Voltage (V) 100 Fig 8. Maximum Safe Operating Area www.irf.com International IRFPO64N TOR Rectifier 120 4200 ~ Ip ITED BY P. - -- #TOP 24A 400 a 424 & 1000 TJBOTTOM 59A < 5 = 4 | pope hee = 80 2 800 @ i | c cS ae Ke ce fees ee pede eel pe pe pe 3 8 ' : 60 s : 600 . + & < N i : a 2 KOK 5 40 a 400 N. 2 w NY ; 20 200 SS 2 feo po fp SS coho | 0 uu 0 Vop = 25V; i : ' 25 C Case rom erature Co) 178 25 50 78 100 125 140 175 C: P Starting T, , Junction Temperature (C) Fig 9. Maximum Drain Current Vs. Fig 12c. Maximum Avalanche Energy Case Temperature Vs. Drain Current O47 Thermal Response (Z thc) A" SINGLE PULSE | | (THERMAL RESPONSE) | ~ is pop po te Notes: 1. Duty factor D = ty /ta Ss vg i my 2. Peak Ty=P omx Zmuc + Tc 0.00001 0.6004 0.004 0.01 0.1 1 ty, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Mechanical drawings, Appendix A Part marking information, Appendix B Test Circuit diagrams, Appendix C www.irf.com C-379