Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 4
1Publication Order Number:
BCW66GLT1/D
BCW66GLT1G,
SBCW66GLT1G
General Purpose Transistor
NPN Silicon
Features
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 45 Vdc
Collector−Base Voltage VCBO 75 Vdc
Emitter−Base Voltage VEBO 5.0 Vdc
Collector Current − Continuous IC800 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommen-
ded Operating Conditions is not implied. Extended exposure to stresses
above the Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1), TA = 25C
Derate above 25C
PD225
1.8
mW
mW/C
Thermal Resistance,
Junction−to−Ambient RqJA 556 C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25C
Derate above 25C
PD
300
2.4
mW
mW/C
Thermal Resistance,
Junction−to−Ambient RqJA 417 C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SOT−23
(TO−236)
CASE 318−08
STYLE 6
http://onsemi.com
MARKING DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
EG = Specific Device Code
M = Date Code*
G= Pb−Free Package
Device Package Shipping†
ORDERING INFORMATION
BCW66GLT1G SOT−23
(Pb−Free)
3,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
EG MG
G
(Note: Microdot may be in either location)
SBCW66GLT1G SOT−23
(Pb−Free)
3,000/Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
BCW66GLT3G SOT−23
(Pb−Free)
10,000/Tape & Reel
BCW66GLT1G, SBCW66GLT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 45 − − Vdc
Collector−Emitter Breakdown Voltage (IC = 10 mAdc, VEB = 0) V(BR)CES 75 − − Vdc
Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − − Vdc
Collector Cutoff Current
(VCE = 45 Vdc, IE = 0)
(VCE = 45 Vdc, IE = 0, TA = 150C)
ICES
−
−
−
−
20
20
nAdc
mAdc
Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO − − 20 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
hFE
50
110
160
60
−
−
−
−
−
−
400
−
−
Collector−Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
−
−
−
−
0.7
0.3
Vdc
Base −Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
− − 2.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT100 − − MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo − − 12 pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo − − 80 pF
Noise Figure
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF − − 10 dB
SWITCHING CHARACTERISTICS
Turn−On Time (IB1 = IB2 = 15 mAdc) ton − − 100 ns
Turn−Off Time (IC = 150 mAdc, RL = 150 W)toff − − 400 ns
10 ms
100 ms
1 s
Thermal Limit
1 ms
Figure 1. Safe Operating Area
VCE (Vdc)
1001.00.1
0.001
0.1
10
IC (A)
1.0
10
0.01
Single Pulse Test at TA = 25C
BCW66GLT1G, SBCW66GLT1G
http://onsemi.com
3
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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Phone: 81−3−5817−1050
BCW66GLT1/D
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