BCW66GLT1G, SBCW66GLT1G General Purpose Transistor NPN Silicon http://onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SOT-23 (TO-236) CASE 318-08 STYLE 6 Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector -Emitter Voltage VCEO 45 Vdc Collector -Base Voltage VCBO 75 Vdc Emitter -Base Voltage VEBO 5.0 Vdc IC 800 mAdc Collector Current - Continuous COLLECTOR 3 1 BASE 2 EMITTER Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board (Note 1), TA = 25C Derate above 25C PD 225 mW 1.8 mW/C 556 C/W 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature RqJA PD 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. November, 2011 - Rev. 4 EG M G 1 = Specific Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping BCW66GLT1G SOT-23 (Pb-Free) 3,000/Tape & Reel SBCW66GLT1G SOT-23 (Pb-Free) 3,000/Tape & Reel BCW66GLT3G SOT-23 10,000/Tape & Reel (Pb-Free) Device *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 EG MG G For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BCW66GLT1/D BCW66GLT1G, SBCW66GLT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Collector -Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 45 - - Vdc Collector -Emitter Breakdown Voltage (IC = 10 mAdc, VEB = 0) V(BR)CES 75 - - Vdc Emitter -Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 - - Vdc - - - - 20 20 nAdc mAdc - - 20 nAdc 50 110 160 60 - - - - - - 400 - - - - - 0.7 0.3 - - 2.0 fT 100 - - MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo - - 12 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo - - 80 pF Noise Figure (VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz) NF - - 10 dB Turn-On Time (IB1 = IB2 = 15 mAdc) ton - - 100 ns Turn-Off Time (IC = 150 mAdc, RL = 150 W) toff - - 400 ns Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCE = 45 Vdc, IE = 0) (VCE = 45 Vdc, IE = 0, TA = 150C) ICES Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) hFE - Collector -Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) Base -Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current -Gain -- Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS 10 1.0 IC (A) 1 ms 10 ms 0.1 100 ms 1s 0.01 Thermal Limit 0.001 0.1 Single Pulse Test at TA = 25C 1.0 10 VCE (Vdc) Figure 1. Safe Operating Area http://onsemi.com 2 100 BCW66GLT1G, SBCW66GLT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 L1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. 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