. MOTOROLA SC XSTRS/R F LeE OD 5 6367254 0046323 T i T#H-27 2N3425 CASE 654-07, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector 1 7 Collector Collector-Emitter Voltage VcEO 15 Vde Collector-Emitter Voltage VCER 20 Vde Collector-Base Voltage VcoBo 40 Vde Emitter-Base Voltage VEBO 5.0 Vde Emitter 3 6 Emitter One Die } Both Die Total Device Dissipation @ Ta = 25C Pp 0.3 04 | Watt DUAL Derate above 25C 1.72 2.28 | mwrc AMPLIFIER TRANSISTORS porate above2e | | 4a | aes [mane NPN SILICON Operating and Storage Junction Ty. Tstg 65 to +200 C Temperature Range EE Refer to MD2369,A,B for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) | Characteristic | Symbol | Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (Ic = 30 mAdc, Rag < 10 ohms) VCER(sus} 20 _ Vde Collector-Emitter Sustaining Voltage(1) (Ic = 10 mAde, lp = 0} VcEO\(sus) 15 - Vde Collector-Base Breakdown Voltage (Ic = 10 wAde, Ie = 0) ViBRICBO 40 - Vde Emitter-Base Breakdown Voltage (Ie = 10 wAde, Ic = 0} ViBRJEBO 5.0 _- Vde Collector Cutoff Current (Vce = 20 Vde, VeBioft) = 0.25 Vde, Ta = 126C) IcEXx - 15 pvAdc Collector Cutoff Current (Vcp = 20 Vde, Ie = 0) IcBO _ 0.025 vAde (Veg = 20 VDe, Ie = 0, Ta = 150C) _ 15 Emitter Cutoff Current (Veg = 4.0 Vde, Ic = 0) leBo - 0.2 pAdc ON CHARACTERISTICS DC Current Gain (Ic = 0.6 mAdo, Vcg = 1.0 Vdc) fre 12 _ _ (Il = 10 mAde, VcE = 1.0 Vde) 30 120 {Ic = 10 mAde, Vcg = 1.0 Vde, Ta = 55C) 12 - Collector-Emitter Saturation Voltage VcE(sat) Vde (Ig = 10 mAde, Ig = 1.0 mAdc) - 0.4 (Ic = 7.0 mAdc, Ip = 0.7 mAdc, Ta = 55C to + 125C) - 0.5 Base-Emitter Saturation Voltage {ic = 10 mAdc, Ig = 1.0 mAdc) VBE(sat) 0.7 0.85 Vde {ic = 7.0 mAdc, Ip = 0.7 mAde, Ta = 55C) - 0.9 SMALL-SIGNAL CHARACTERISTICS : Current-Gain Bandwidth Product (lc = 20 mAdc, Vcg = 10 Vde, f = 100 MHz) fr 300 - MHz Output Capacitance (Vcg = 10 Vdc, Ie = 0, f = 140 kHz) Cobo _ 6.0 pF Input Capacitance (Vpe = 0.6 Vde, Ic = 0, f = 140 kHz) Cibo - 9.0 pF Small-Signal Current Gain (I = 10 mAdc, Vcg = 1.0 Vde, f = 1.0 kHz) hfe 20 _ _ Real Part of Input Impedance (Ic = 10 mAdc, Vee = 10 Vde, f = 300 MHz) Re(hie) -_ 50 Ohms SWITCHING CHARACTERISTICS Storage Time ts _ 40 ns (Ic = 10 mAde, Ig4 = 10 mAdc, Ip2 = 10 mAde) Turn-On Time ton - 50 ns (Voc = 3.0 Vde, Vepiott) = 2.0 Vde, Ic = 10 mAde, Ig1 = 3.0 mAdc) Turn-Off Time toff - 90 ns (Vcc = 3.0 Vde, I = 10 mAde, Igy = 3.0 mAde, lpg = 1.0 mAdc) (1) Pulse Test: Pulse Width < 300 ys, Duty Cycle < 1.0%, MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 3-112