INA21x
V+
OUT
GND IN-
IN+
CBYPASS
0.01 Fm
to
0.1 Fm
+2.7Vto+26V
REF
Reference
Voltage
Supply Load
RSHUNT
Output
R1R3
R2R4
PRODUCT R andR
3 4
INA210
INA211
INA212
INA213
INA214
5kW
2kW
1kW
20kW
10kW
R andR
1 2
1MW
1MW
1MW
1MW
1MW
GAIN
200
500
1000
50
100
SC70
SC70
Package
QFN
Package
INA210, INA211
INA212, INA213
INA214
www.ti.com
SBOS437E –MAY 2008–REVISED JUNE 2013
Voltage Output, High or Low Side Measurement,
Bi-Directional Zerø-Drift Series
Current-Shunt Monitor
Check for Samples: INA210,INA211,INA212,INA213,INA214
1FEATURES APPLICATIONS
2• WIDE COMMON-MODE RANGE: –0.3V to 26V • NOTEBOOK COMPUTERS
• OFFSET VOLTAGE: ±35μV (Max, INA210) • CELL PHONES
(Enables shunt drops of 10mV full-scale) • TELECOM EQUIPMENT
• ACCURACY: • POWER MANAGEMENT
– ±1% Gain Error (Max over temperature) • BATTERY CHARGERS
– 0.5μV/°C Offset Drift (Max) • WELDING EQUIPMENT
– 10ppm/°C Gain Drift (Max) DESCRIPTION
• CHOICE OF GAINS: The INA210, INA211, INA212, INA213, and INA214
– INA210: 200V/V are voltage output current shunt monitors that can
– INA211: 500V/V sense drops across shunts at common-mode
– INA212: 1000V/V voltages from –0.3V to 26V, independent of the
supply voltage. Five fixed gains are available: 50V/V,
– INA213: 50V/V 100V/V, 200V/V, 500V/V, or 1000V/V. The low offset
– INA214: 100V/V of the Zerø-Drift architecture enables current sensing
• QUIESCENT CURRENT: 100μA (max) with maximum drops across the shunt as low as
10mV full-scale.
• SC70 PACKAGE: All Models
• THIN QFN PACKAGE: INA210, INA213, INA214 These devices operate from a single +2.7V to +26V
power supply, drawing a maximum of 100μA of
supply current. All versions are specified over the
extended operating temperature range (–40°C to
+125°C), and offered in an SC70 package. The
INA210, INA213, and INA214 are also offered in a
thin QFN package.
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 2008–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
INA210, INA211
INA212, INA213
INA214
SBOS437E –MAY 2008–REVISED JUNE 2013
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION(1)
PACKAGE
PRODUCT GAIN PACKAGE DESIGNATOR
200V/V SC70-6 DCK
INA210A 200V/V Thin QFN-10 RSW
200V/V SC70-6 DCK
INA210B 200V/V Thin QFN-10 RSW
INA211A 500V/V SC70-6 DCK
INA211B 500V/V SC70-6 DCK
INA212A 1000V/V SC70-6 DCK
INA212B 1000V/V SC70-6 DCK
50V/V SC70-6 DCK
INA213A 50V/V Thin QFN-10 RSW
50V/V SC70-6 DCK
INA213B 50V/V Thin QFN-10 RSW
100V/V SC70-6 DCK
INA214A 100V/V Thin QFN-10 RSW
100V/V SC70-6 DCK
INA214B 100V/V Thin QFN-10 RSW
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the
device product folder at www.ti.com.
ABSOLUTE MAXIMUM RATINGS(1)
Over operating free-air temperature range, unless otherwise noted. INA210, INA211,
INA212, INA213, INA214 UNIT
Supply Voltage +26 V
Differential (VIN+)–(VIN–) –26 to +26 V
Analog Inputs,
VIN+, VIN– (2) Common-Mode (3) GND–0.3 to +26 V
REF Input GND–0.3 to (V+) + 0.3 V
Output(3) GND–0.3 to (V+) + 0.3 V
Input Current into Any Pin(3) 5 mA
Operating Temperature –55 to +150 °C
Storage Temperature –65 to +150 °C
Junction Temperature +150 °C
Human Body Model (HBM) 4000 V
ESD Ratings Charged-Device Model (CDM) 1000 V
(version A): Machine Model (MM) 200 V
Human Body Model (HBM) 1500 V
ESD Ratings Charged-Device Model (CDM) 1000 V
(version B): Machine Model (MM) 100 V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively.
(3) Input voltage at any pin may exceed the voltage shown if the current at that pin is limited to 5mA.
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Product Folder Links: INA210 INA211 INA212 INA213 INA214
INA210, INA211
INA212, INA213
INA214
www.ti.com
SBOS437E –MAY 2008–REVISED JUNE 2013
ELECTRICAL CHARACTERISTICS
Boldface limits apply over the specified temperature range, TA= –40°C to +125°C.
At TA= +25°C, VSENSE = VIN+ – VIN–.
INA210, INA213, and INA214: VS= +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted.
INA211 and INA212: VS= +12V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted. INA210, INA211,
INA212, INA213, INA214
PARAMETER CONDITIONS MIN TYP MAX UNIT
INPUT
Version A –0.3 26 V
Common-Mode Input Range VCM Version B –0.1 26 V
Common-Mode Rejection CMR VIN+ = 0V to +26V, VSENSE = 0mV
INA210, INA211, INA212, 105 140 dB
INA214
INA213 100 120 dB
Offset Voltage, RTI(1) VOS VSENSE = 0mV
INA210, INA211, INA212 ±0.55 ±35 μV
INA213 ±5 ±100 μV
INA214 ±1 ±60 μV
vs Temperature dVOS/dT 0.1 0.5 μV/°C
VS= +2.7V to +18V, VIN+ = +18V,
vs Power Supply PSR ±0.1 ±10 μV/V
VSENSE = 0mV
Input Bias Current IBVSENSE = 0mV 15 28 35 μA
Input Offset Current IOS VSENSE = 0mV ±0.02 μA
OUTPUT
Gain, INA210 G 200 V/V
INA211 500 V/V
INA212 1000 V/V
INA213 50 V/V
INA214 100 V/V
Gain Error VSENSE = –5mV to 5mV ±0.02 ±1 %
vs Temperature 3 10 ppm/°C
Nonlinearity Error VSENSE = –5mV to 5mV ±0.01 %
Maximum Capacitive Load No sustained oscillation 1 nF
VOLTAGE OUTPUT(2) RL= 10kΩto GND
Swing to V+ Power-Supply Rail (V+)–0.05 (V+)–0.2 V
Swing to GND (VGND)+0.005 (VGND)+0.05 V
FREQUENCY RESPONSE
CLOAD = 10pF, INA210 14 kHz
CLOAD = 10pF, INA211 7 kHz
Bandwidth GBW CLOAD = 10pF, INA212 4 kHz
CLOAD = 10pF, INA213 80 kHz
CLOAD = 10pF, INA214 30 kHz
Slew Rate SR 0.4 V/μs
NOISE, RTI(1)
Voltage Noise Density 25 nV/√Hz
(1) RTI = referred-to-input.
(2) See Typical Characteristic curve, Output Voltage Swing vs Output Current (Figure 10).
Copyright © 2008–2013, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Links: INA210 INA211 INA212 INA213 INA214
NC(1) V+
NC(1) IN+
IN+
IN-
IN-
REF 8
9
10
5
4
3
1 2
7 6
GND
OUT
1
2
3
6
5
4
OUT
IN-
IN+
REF
GND
V+
INA210, INA211
INA212, INA213
INA214
SBOS437E –MAY 2008–REVISED JUNE 2013
www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
Boldface limits apply over the specified temperature range, TA= –40°C to +125°C.
At TA= +25°C, VSENSE = VIN+ – VIN–.
INA210, INA213, and INA214: VS= +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted.
INA211 and INA212: VS= +12V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted. INA210, INA211,
INA212, INA213, INA214
PARAMETER CONDITIONS MIN TYP MAX UNIT
POWER SUPPLY
Operating Voltage Range VS+2.7 +26 V
Quiescent Current IQVSENSE = 0mV 65 100 μA
Over Temperature 115 μA
TEMPERATURE RANGE
Specified Range –40 +125 °C
Operating Range –55 +150 °C
Thermal Resistance θJA
SC70 250 °C/W
Thin QFN 80 °C/W
PIN CONFIGURATIONS
DCK PACKAGE
SC70-6
(TOP VIEW)
RSW PACKAGE
THIN QFN-10
(TOP VIEW)
(1) NC denotes no internal connection. Pin can be left floating or connected to any voltage between V– and V+.
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Product Folder Links: INA210 INA211 INA212 INA213 INA214
Population
GainError(%)
1.0
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Temperature( C)°
GainError(%)
1.0
0.8
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
-0.8
-1.0
-50 -25 150
0 25 50 75 100 125
20TypicalUnitsShown
Population
Common-ModeRejectionRatio( V/V)m
5.0
-5.0
-4.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Temperature( C)°
CMRR( V/V)m
5
4
3
2
1
0
-1
-2
-3
-4
-5
-50 -25 150
0 25 50 75 100 125
Population
OffsetVoltage( V)m
0
5
10
15
20
25
30
35
-35
-30
-25
-20
-15
-10
-5
Temperature( C)°
OffsetVoltage( V)m
100
80
60
40
20
0
-20
-40
-60
-80
-100
-50 -25 150
0 25 50 75 100 125
INA210, INA211
INA212, INA213
INA214
www.ti.com
SBOS437E –MAY 2008–REVISED JUNE 2013
TYPICAL CHARACTERISTICS
The INA210 is used for typical characteristics at TA= +25°C, VS= +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted.
INPUT OFFSET VOLTAGE OFFSET VOLTAGE
PRODUCTION DISTRIBUTION vs TEMPERATURE
Figure 1. Figure 2.
COMMON-MODE REJECTION COMMON-MODE REJECTION RATIO
PRODUCTION DISTRIBUTION vs TEMPERATURE
Figure 3. Figure 4.
GAIN ERROR GAIN ERROR
PRODUCTION DISTRIBUTION vs TEMPERATURE
Figure 5. Figure 6.
Copyright © 2008–2013, Texas Instruments Incorporated Submit Documentation Feedback 5
Product Folder Links: INA210 INA211 INA212 INA213 INA214
Common-ModeVoltage(V)
InputBiasCurrent( A)m
50
40
30
20
10
0
-10
0 5 3010 15 20 25
I ,I ,V =2.5V
B+ B- REF
I ,I ,V =0V
B+ B- REF
V+
(V+) 0.5-
(V+) 1-
(V+) 1.5-
(V+) 2-
(V+) 2.5-
(V+) 3-
OutputVoltageSwing(V)
GND+3
GND+2.5
GND+2
GND+1.5
GND+1
GND+0.5
GND
0 5 10 15 20
OutputCurrent(mA)
25 30 35 40
V =2.7V
S
to26V
V =2.7Vto26V
S
V =5Vto26V
S
V =2.7V
S
T = 40C-
A
T =+25C
A
T =+125C
A
Frequency (Hz)
|CMRR| (dB)
160
140
120
100
80
60
40
20
0
1 10 1M100 1k 10k 100k
V = +5V
S
V = 1V Sine
CM
V = Shorted
DIF
V = 2.5V
REF
Frequency(Hz)
|PSRR|(dB)
160
140
120
100
80
60
40
20
0
1 10 100k
V =+5V+250mVSineDisturbance
S
V =0V
CM
V =Shorted
DIF
V =2.5V
REF
100 1k 10k
Frequency(Hz)
Gain(dB)
70
60
50
40
30
20
10
0
10-
10 100 10M1k 10k 100k 1M
V =0V
V =15mV Sine
CM
DIF PP
INA212 INA211
INA213 INA210INA214
INA210, INA211
INA212, INA213
INA214
SBOS437E –MAY 2008–REVISED JUNE 2013
www.ti.com
TYPICAL CHARACTERISTICS (continued)
The INA210 is used for typical characteristics at TA= +25°C, VS= +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted.
GAIN POWER-SUPPLY REJECTION RATIO
vs FREQUENCY vs FREQUENCY
Figure 7. Figure 8.
COMMON-MODE REJECTION RATIO OUTPUT VOLTAGE SWING
vs FREQUENCY vs OUTPUT CURRENT
Figure 9. Figure 10.
INPUT BIAS CURRENT vs COMMON-MODE VOLTAGE INPUT BIAS CURRENT vs COMMON-MODE VOLTAGE
with SUPPLY VOLTAGE = +5V with SUPPLY VOLTAGE = 0V (Shutdown)
Figure 11. Figure 12.
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Product Folder Links: INA210 INA211 INA212 INA213 INA214
OutputVoltage
(0.5V/diV)
InputVoltage
(5mV/diV)
Time(100ms/div)
2VPP OutputSignal
10mV InputSignal
PP
Common-ModeVoltage(1V/div)
OutputVoltage(40mV/div)
Time(50ms/div)
CommonVoltageStep
OutputVoltage
0V
0V
Frequency(Hz)
Input-RefferedVoltageNoise(nV/ )Öz
100
10
1
10 100 1k 100k10k
V = 2.5V±
S
V =0V
REF
V ,V =0V
IN- IN+
INA213 INA214 INA212
INA211 INA210
Referred-to-Input
VoltageNoise(200nV/div)
Time(1s/div)
V = 2.5V±
S
V =0V
CM
V =0V
DIF
V =0V
REF
Temperature( C)°
InputBiasCurrent( A)m
35
30
25
20
15
10
5
0
-50 -25 1500 25 50 75 100 125
Temperature( C)°
QuiescentCurrent( A)m
100
90
80
70
60
50
40
30
20
10
0
-50 -25 150
0 25 50 75 100 125
INA210, INA211
INA212, INA213
INA214
www.ti.com
SBOS437E –MAY 2008–REVISED JUNE 2013
TYPICAL CHARACTERISTICS (continued)
The INA210 is used for typical characteristics at TA= +25°C, VS= +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted.
INPUT BIAS CURRENT QUIESCENT CURRENT
vs TEMPERATURE vs TEMPERATURE
Figure 13. Figure 14.
INPUT-REFERRED VOLTAGE NOISE 0.1Hz to 10Hz VOLTAGE NOISE
vs FREQUENCY (Referred-to-Input)
Figure 15. Figure 16.
STEP RESPONSE COMMON-MODE VOLTAGE
(10mVPP Input Step) TRANSIENT RESPONSE
Figure 17. Figure 18.
Copyright © 2008–2013, Texas Instruments Incorporated Submit Documentation Feedback 7
Product Folder Links: INA210 INA211 INA212 INA213 INA214
1V/div
Time(100 s/div)m
0V
OutputVoltage
Supply Voltage
V =5V,1kHzStepwithV =0V,V =2.5V
S DIFF REF
1V/div
Time(100ms/div)
0V
V =5V,1kHzStepwithV =0V,V =2.5V
S DIFF REF
Supply Voltage
OutputVoltage
2V/div
Time(250ms/div)
0V
Output
V =5V,V =12V,V =2.5V
S CM REF
InvertingInputOverload
2V/div
Time(250ms/div)
0V
V =5V,V =12V,V =2.5V
S CM REF
NoninvertingInputOverload
Output
INA210, INA211
INA212, INA213
INA214
SBOS437E –MAY 2008–REVISED JUNE 2013
www.ti.com
TYPICAL CHARACTERISTICS (continued)
The INA210 is used for typical characteristics at TA= +25°C, VS= +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted.
INVERTING DIFFERENTIAL INPUT OVERLOAD NONINVERTING DIFFERENTIAL INPUT OVERLOAD
Figure 19. Figure 20.
START-UP RESPONSE BROWNOUT RECOVERY
Figure 21. Figure 22.
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Product Folder Links: INA210 INA211 INA212 INA213 INA214
INA21x
V+
OUT
GND IN-
IN+
CBYPASS
0.01mF
to
0.1mF
+2.7Vto+26V
REF
Reference
Voltage
Supply Load
RSHUNT
Output
R1R3
R2
R4
INA210, INA211
INA212, INA213
INA214
www.ti.com
SBOS437E –MAY 2008–REVISED JUNE 2013
APPLICATION INFORMATION
BASIC CONNECTIONS
Figure 23 shows the basic connections of the INA210-INA214. The input pins, IN+ and IN–, should be connected
as closely as possible to the shunt resistor to minimize any resistance in series with the shunt resistance.
Figure 23. Typical Application
Power-supply bypass capacitors are required for stability. Applications with noisy or high impedance power
supplies may require additional decoupling capacitors to reject power-supply noise. Connect bypass capacitors
close to the device pins.
On the RSW package, two pins are provided for each input. These pins should be tied together (that is, tie IN+ to
IN+ and tie IN– to IN–).
POWER SUPPLY
The input circuitry of the INA210-INA214 can accurately measure beyond its power-supply voltage, V+. For
example, the V+ power supply can be 5V, whereas the load power supply voltage can be as high as +26V.
However, the output voltage range of the OUT terminal is limited by the voltages on the power-supply pin. Note
also that the INA210-INA214 can withstand the full –0.3V to +26V in the input pins, regardless of whether the
device has power applied or not.
SELECTING RS
The zero-drift offset performance of the INA210-INA214 offers several benefits. Most often, the primary
advantage of the low offset characteristic enables lower full-scale drops across the shunt. For example, non-
zero-drift current shunt monitors typically require a full-scale range of 100mV.
The INA210-INA214 series gives equivalent accuracy at a full-scale range on the order of 10mV. This accuracy
reduces shunt dissipation by an order of magnitude with many additional benefits.
Alternatively, there are applications that must measure current over a wide dynamic range that can take
advantage of the low offset on the low end of the measurement. Most often, these applications can use the lower
gain INA213 or INA214 to accommodate larger shunt drops on the upper end of the scale. For instance, an
INA213 operating on a 3.3V supply could easily handle a full-scale shunt drop of 60mV, with only 100μV of
offset.
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Product Folder Links: INA210 INA211 INA212 INA213 INA214
RSHUNT
VREF
VOUT
V+
VCM
R < 10W
SRINT
R < 10
SW
RINT
Load
CF
Bias
INA210, INA211
INA212, INA213
INA214
SBOS437E –MAY 2008–REVISED JUNE 2013
www.ti.com
UNIDIRECTIONAL OPERATION
Unidirectional operation allows the INA210-INA214 to measure currents through a resistive shunt in one
direction. The most frequent case of unidirectional operation sets the output at ground by connecting the REF pin
to ground. In unidirectional applications where the highest possible accuracy is desirable at very low inputs, bias
the REF pin to a convenient value above 50mV to get the device output swing into the linear range for zero
inputs.
A less frequent case of unipolar output biasing is to bias the output by connecting the REF pin to the supply; in
this case, the quiescent output for zero input is at quiescent supply. This configuration would only respond to
negative currents (inverted voltage polarity at the device input).
BIDIRECTIONAL OPERATION
Bidirectional operation allows the INA210-INA214 to measure currents through a resistive shunt in two directions.
In this case, the output can be set anywhere within the limits of what the reference inputs allow (that is, between
0V to V+). Typically, it is set at half-scale for equal range in both directions. In some cases, however, it is set at a
voltage other than half-scale when the bidirectional current is nonsymmetrical.
The quiescent output voltage is set by applying voltage to the reference input. Under zero differential input
conditions the output assumes the same voltage as is applied to the reference input.
INPUT FILTERING
An obvious and straightforward filtering location is at the device output. However, this location negates the
advantage of the low output impedance of the internal buffer. The only other filtering option is at the device input
pins. This location, though, does require consideration of the ±30% tolerance of the internal resistances.
Figure 24 shows a filter placed at the inputs pins.
Figure 24. Filter at Input Pins
The addition of external series resistance, however, creates an additional error in the measurement so the value
of these series resistors should be kept to 10Ωor less if possible to reduce impact to accuracy.. The internal bias
network shown in Figure 24 present at the input pins creates a mismatch in input bias currents when a
differential voltage is applied between the input pins. If additional external series filter resistors are added to the
circuit, the mismatch in bias currents results in a mismatch of voltage drops across the filter resistors. This
mismatch creates a differential error voltage that subtracts from the voltage developed at the shunt resistor. This
error results in a voltage at the device input pins that is different than the voltage developed across the shunt
resistor. Without the additional series resistance, the mismatch in input bias currents has little effect on device
operation. The amount of error these external filter resistor add to the measurement can be calculated using
Equation 2 where the gain error factor is calculated using Equation 1.
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Product Folder Links: INA210 INA211 INA212 INA213 INA214
Gain Error (%) = 100 (100 Gain Error Factor)- ´
10,000
(9 R + 10,000´S)
20,000
(17 R + 20,000´S)
5000
(9 R + 5000´S)
10,000
(13 R + 10,000´S)
1000
R + 1000
S
Gain Error Factor =
(1250 ´INT
R )
(1250 S
´ ´ ´R ) + (1250 R ) + (R R )
INT S INT
INA210, INA211
INA212, INA213
INA214
www.ti.com
SBOS437E –MAY 2008–REVISED JUNE 2013
The amount of variance in the differential voltage present at the device input relative to the voltage developed at
the shunt resistor is based both on the external series resistance value as well as the internal input resistors, R3
and R4 (or RINT as shown in Figure 24). The reduction of the shunt voltage reaching the device input pins
appears as a gain error when comparing the output voltage relative to the voltage across the shunt resistor. A
factor can be calculated to determine the amount of gain error that is introduced by the addition of external series
resistance. The equation used to calculate the expected deviation from the shunt voltage to what is seen at the
device input pins is given in Equation 1:
where:
RINT is the internal input resistor (R3 and R4), and
RSis the external series resistance. (1)
With the adjustment factor equation including the device internal input resistance, this factor varies with each
gain version, as shown in Table 1. Each individual device gain error factor is shown in Table 2.
Table 1. Input Resistance
PRODUCT GAIN RINT (kΩ)
INA210 200 5
INA211 500 2
INA212 1000 1
INA213 50 20
INA214 100 10
Table 2. Device Gain Error Factor
PRODUCT SIMPLIFIED GAIN ERROR FACTOR
INA210
INA211
INA212
INA213
INA214
The gain error that can be expected from the addition of the external series resistors can then be calculated
based on Equation 2:
(2)
For example, using an INA212 and the corresponding gain error equation from Table 2, a series resistance of
10Ωresults in a gain error factor of 0.982. The corresponding gain error is then calculated using Equation 2,
resulting in a gain error of approximately 1.77% solely because of the external 10Ωseries resistors. Using an
INA213 with the same 10Ωseries resistor results in a gain error factor of 0.991 and a gain error of 0.84% again
solely because of these external resistors.
Copyright © 2008–2013, Texas Instruments Incorporated Submit Documentation Feedback 11
Product Folder Links: INA210 INA211 INA212 INA213 INA214
INA21x
V+
OUT
GND IN-
IN+
PRODUCT R and R
3 4
INA210
INA211
INA212
INA213
INA214
5kW
2kW
1kW
20kW
10kW
CBYPASS
NOTE: 1M paths from shunt inputs to reference and INA21x outputs.W
Shutdown
Control
REF
Reference
Voltage
1MWR3
1MWR4
Supply Load
RSHUNT
Output
INA210, INA211
INA212, INA213
INA214
SBOS437E –MAY 2008–REVISED JUNE 2013
www.ti.com
SHUTTING DOWN THE INA210-INA214 SERIES
While the INA210-INA214 series does not have a shutdown pin, its low power consumption allows powering from
the output of a logic gate or transistor switch that can turn on and turn off the INA210-INA214 power-supply
quiescent current.
However, in current shunt monitoring applications. there is also a concern for how much current is drained from
the shunt circuit in shutdown conditions. Evaluating this current drain involves considering the simplified
schematic of the INA210-INA214 in shutdown mode shown in Figure 25.
Figure 25. Basic Circuit for Shutting Down INA210-INA214 with Grounded Reference
Note that there is typically slightly more than 1MΩimpedance (from the combination of 1MΩfeedback and 5kΩ
input resistors) from each input of the INA210-INA214 to the OUT pin and to the REF pin. The amount of current
flowing through these pins depends on the respective ultimate connection. For example, if the REF pin is
grounded, the calculation of the effect of the 1MΩimpedance from the shunt to ground is straightforward.
However, if the reference or op amp is powered while the INA210-INA214 is shut down, the calculation is direct;
instead of assuming 1MΩto ground, however, assume 1MΩto the reference voltage. If the reference or op amp
is also shut down, some knowledge of the reference or op amp output impedance under shutdown conditions is
required. For instance, if the reference source behaves as an open circuit when it is unpowered, little or no
current flows through the 1MΩpath.
Regarding the 1MΩpath to the output pin, the output stage of a disabled INA210-INA214 does constitute a good
path to ground; consequently, this current is directly proportional to a shunt common-mode voltage impressed
across a 1MΩresistor.
As a final note, when the device is powered up, there is an additional, nearly constant, and well-matched 25μA
that flows in each of the inputs as long as the shunt common-mode voltage is 3V or higher. Below 2V common-
mode, the only current effects are the result of the 1MΩresistors.
12 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated
Product Folder Links: INA210 INA211 INA212 INA213 INA214
Output
INA21x
Load
Supply
ADC
V+
OUT
GND IN-
IN+
CBYPASS
0.01mF
to
0.1mF
+2.7Vto+26V
REF
R1R3
R2R4
RSHUNT
INA210, INA211
INA212, INA213
INA214
www.ti.com
SBOS437E –MAY 2008–REVISED JUNE 2013
REF INPUT IMPEDANCE EFFECTS
As with any difference amplifier, the INA210-INA214 series common-mode rejection ratio is affected by any
impedance present at the REF input. This concern is not a problem when the REF pin is connected directly to
most references or power supplies. When using resistive dividers from the power supply or a reference voltage,
the REF pin should be buffered by an op amp.
In systems where the INA210-INA214 output can be sensed differentially, such as by a differential input analog-
to-digital converter (ADC) or by using two separate ADC inputs, the effects of external impedance on the REF
input can be cancelled. Figure 26 depicts a method of taking the output from the INA210-INA214 by using the
REF pin as a reference.
Figure 26. Sensing INA210-INA214 to Cancel Effects of Impedance on the REF Input
Copyright © 2008–2013, Texas Instruments Incorporated Submit Documentation Feedback 13
Product Folder Links: INA210 INA211 INA212 INA213 INA214
INA21x
V+
OUT
GND IN-
IN+
CBYPASS
Shutdown
Control
REF
Reference
Voltage
Supply Load
RSHUNT
Output
1MW
RPROTECT
10W
RPROTECT
10W
R3
1MWR4
INA210, INA211
INA212, INA213
INA214
SBOS437E –MAY 2008–REVISED JUNE 2013
www.ti.com
USING THE INA210 WITH COMMON-MODE TRANSIENTS ABOVE 26V
With a small amount of additional circuitry, the INA210-INA214 series can be used in circuits subject to transients
higher than 26V, such as automotive applications. Use only zener diode or zener-type transient absorbers
(sometimes referred to as Transzorbs)— any other type of transient absorber has an unacceptable time delay.
Start by adding a pair of resistors as shown in Figure 27 as a working impedance for the zener. It is desirable to
keep these resistors as small as possible, most often around 10Ω. Larger values can be used with an effect on
gain that is discussed in the section on input filtering. Because this circuit is limiting only short-term transients,
many applications are satisfied with a 10Ωresistor along with conventional zener diodes of the lowest power
rating that can be found. This combination uses the least amount of board space. These diodes can be found in
packages as small as SOT-523 or SOD-523.
Figure 27. INA210-INA214 Transient Protection Using Dual Zener Diodes
14 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated
Product Folder Links: INA210 INA211 INA212 INA213 INA214
INA21x
V+
OUT
GND IN-
IN+
CBYPASS
Shutdown
Control
REF
Reference
Voltage
Supply Load
RSHUNT
Output
1MW
RPROTECT
10W
RPROTECT
10W
R3
1MWR4
INA210, INA211
INA212, INA213
INA214
www.ti.com
SBOS437E –MAY 2008–REVISED JUNE 2013
In the event that low-power zeners do not have sufficient transient absorption capability and a higher power
transzorb must be used, the most package-efficient solution then involves using a single transzorb and back-to-
back diodes between the device inputs. The most space-efficient solutions are dual series-connected diodes in a
single SOT-523 or SOD-523 package. This method is shown in Figure 28. In either of these examples, the total
board area required by the INA210-INA214 with all protective components is less than that of an SO-8 package,
and only slightly greater than that of an MSOP-8 package.
Figure 28. INA210-INA214 Transient Protection Using a Single Transzorb and Input Clamps
Copyright © 2008–2013, Texas Instruments Incorporated Submit Documentation Feedback 15
Product Folder Links: INA210 INA211 INA212 INA213 INA214
OUT
IN+
IN-
-
+
REF
GND
V+
1MW
1MW
R3
R4
+2.7V to +26V
Reference
Voltage
Shunt
Load Supply
Output
0.01 F
to 0.1 F
m
m
MMZ1608B601C
0.01 F
to 0.1 F
m
m
Device
INA210, INA211
INA212, INA213
INA214
SBOS437E –MAY 2008–REVISED JUNE 2013
www.ti.com
IMPROVING TRANSIENT ROBUSTNESS
Applications involving large input transients with excessive dV/dt above 2kV per microsecond present at the
device input pins may cause damage to the internal ESD structures on version A devices. This potential damage
is a result of the internal latching of the ESD structure to ground when this transient occurs at the input. With
significant current available in most current-sensing applications, the large current flowing through the input
transient-triggered, ground-shorted ESD structure quickly results in damage to the silicon. External filtering can
be used to attenuate the transient signal prior to reaching the inputs to avoid the latching condition. Care must be
taken to ensure that external series input resistance does not significantly impact gain error accuracy. For
accuracy purposes, these resistances should be kept under 10Ωif possible. Ferrite beads are recommended for
this filter because of their inherently low dc ohmic value. Ferrite beads with less than 10Ωof resistance at dc and
over 600Ωof resistance at 100MHz to 200MHz are recommended. The recommended capacitor values for this
filter are between 0.01µF and 0.1µF to ensure adequate attenuation in the high-frequency region. This protection
scheme is shown in Figure 29.
Figure 29. Transient Protection
To minimize the cost of adding these external components to protect the device in applications where large
transient signals may be present, version B devices are now available with new ESD structures that are not
susceptible to this latching condition. Version B devices are incapable of sustaining these damage causing
latched conditions so they do not have the same sensitivity to the transients that the version A devices have,
thus making the version B devices a better fit for these applications.
16 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated
Product Folder Links: INA210 INA211 INA212 INA213 INA214
INA210, INA211
INA212, INA213
INA214
www.ti.com
SBOS437E –MAY 2008–REVISED JUNE 2013
REVISION HISTORY
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision D (November 2012) to Revision E Page
• Deleted Package Marking column from Package/Ordering Information table ...................................................................... 2
Changes from Revision C (August 2012) to Revision D Page
• Changed Frequency Response, Bandwidth parameter in Electrical Characteristics table .................................................. 3
Changes from Revision B (June 2009) to Revision C Page
• Changed Package/Ordering table to show both silicon versions A and B ........................................................................... 2
• Added silicon version B ESD ratings to Abs Max table ........................................................................................................ 2
• Added silicon version B row to Input, Common-Mode Input Range parameter in Electrical Characteristics table .............. 3
• Corrected typo in Figure 9 .................................................................................................................................................... 6
• Updated Figure 12 ................................................................................................................................................................ 6
• Changed Input Filtering section .......................................................................................................................................... 10
• Added Improving Transient Robustness section ................................................................................................................ 16
Changes from Revision A (June 2008) to Revision B Page
• Added RSW package to device photo .................................................................................................................................. 1
• Added QFN package to Features list ................................................................................................................................... 1
• Updated front page graphic .................................................................................................................................................. 1
• Added RSW ordering information to Package/Ordering Information table ........................................................................... 2
• Added footnote 3 to Electrical Characteristics table ............................................................................................................. 3
• Added QFN package information to Temperature Range section of Electrical Characteristics table .................................. 3
• Added RSW package pin out drawing .................................................................................................................................. 4
• Changed Figure 2 to reflect operating temperature range ................................................................................................... 5
• Changed Figure 4 to reflect operating temperature range ................................................................................................... 5
• Changed Figure 6 to reflect operating temperature range ................................................................................................... 5
• Changed Figure 13 to reflect operating temperature range ................................................................................................. 7
• Changed Figure 14 to reflect operating temperature range ................................................................................................. 7
• Added RSW description to the Basic Connections section .................................................................................................. 9
• Changed 60μV to 100μV in last sentence of the Selecting RS section ............................................................................... 9
Changes from Original (May 2008) to Revision A Page
• Changed availability of INA211 and INA212 to currently available in Package/Ordering Information table ........................ 2
• Deleted first footnote of Electrical Characteristics table ....................................................................................................... 3
• Changed Figure 7 ................................................................................................................................................................. 5
• Changed Figure 15 ............................................................................................................................................................... 7
Copyright © 2008–2013, Texas Instruments Incorporated Submit Documentation Feedback 17
Product Folder Links: INA210 INA211 INA212 INA213 INA214
PACKAGE OPTION ADDENDUM
www.ti.com 10-Nov-2013
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
INA210AIDCKR ACTIVE SC70 DCK 6 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CET
INA210AIDCKRG4 ACTIVE SC70 DCK 6 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CET
INA210AIDCKT ACTIVE SC70 DCK 6 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CET
INA210AIDCKTG4 ACTIVE SC70 DCK 6 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CET
INA210AIRSWR ACTIVE UQFN RSW 10 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 KNJ
INA210AIRSWT ACTIVE UQFN RSW 10 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 (KNJ ~ NSJ)
INA210BIDCKR ACTIVE SC70 DCK 6 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SED
INA210BIDCKT ACTIVE SC70 DCK 6 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SED
INA210BIRSWR ACTIVE UQFN RSW 10 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 SHQ
INA210BIRSWT ACTIVE UQFN RSW 10 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 SHQ
INA211AIDCKR ACTIVE SC70 DCK 6 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CEU
INA211AIDCKRG4 ACTIVE SC70 DCK 6 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CEU
INA211AIDCKT ACTIVE SC70 DCK 6 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CEU
INA211AIDCKTG4 ACTIVE SC70 DCK 6 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CEU
INA211BIDCKR ACTIVE SC70 DCK 6 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SEE
INA211BIDCKT ACTIVE SC70 DCK 6 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SEE
INA212AIDCKR ACTIVE SC70 DCK 6 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CEV
PACKAGE OPTION ADDENDUM
www.ti.com 10-Nov-2013
Addendum-Page 2
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
INA212AIDCKRG4 ACTIVE SC70 DCK 6 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CEV
INA212AIDCKT ACTIVE SC70 DCK 6 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CEV
INA212AIDCKTG4 ACTIVE SC70 DCK 6 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CEV
INA212BIDCKR ACTIVE SC70 DCK 6 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SEC
INA212BIDCKT ACTIVE SC70 DCK 6 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SEC
INA213AIDCKR ACTIVE SC70 DCK 6 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CFT
INA213AIDCKRG4 ACTIVE SC70 DCK 6 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CFT
INA213AIDCKT ACTIVE SC70 DCK 6 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CFT
INA213AIDCKTG4 ACTIVE SC70 DCK 6 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CFT
INA213AIRSWR ACTIVE UQFN RSW 10 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 KPJ
INA213AIRSWT ACTIVE UQFN RSW 10 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 KPJ
INA213BIDCKR ACTIVE SC70 DCK 6 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SEF
INA213BIDCKT ACTIVE SC70 DCK 6 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SEF
INA213BIRSWR ACTIVE UQFN RSW 10 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 SHT
INA213BIRSWT ACTIVE UQFN RSW 10 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 SHT
INA214AIDCKR ACTIVE SC70 DCK 6 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CFV
INA214AIDCKRG4 ACTIVE SC70 DCK 6 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CFV
INA214AIDCKT ACTIVE SC70 DCK 6 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CFV
PACKAGE OPTION ADDENDUM
www.ti.com 10-Nov-2013
Addendum-Page 3
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
INA214AIDCKTG4 ACTIVE SC70 DCK 6 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CFV
INA214AIRSWR ACTIVE UQFN RSW 10 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 KRJ
INA214AIRSWT ACTIVE UQFN RSW 10 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 KRJ
INA214BIDCKR ACTIVE SC70 DCK 6 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SEA
INA214BIDCKT ACTIVE SC70 DCK 6 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SEA
INA214BIRSWR ACTIVE UQFN RSW 10 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 SHU
INA214BIRSWT ACTIVE UQFN RSW 10 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 SHU
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
PACKAGE OPTION ADDENDUM
www.ti.com 10-Nov-2013
Addendum-Page 4
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF INA212, INA214 :
•Automotive: INA212-Q1, INA214-Q1
NOTE: Qualified Version Definitions:
•Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
INA210AIDCKR SC70 DCK 6 3000 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3
INA210AIDCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA210AIDCKT SC70 DCK 6 250 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3
INA210AIDCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA210AIRSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1
INA210AIRSWT UQFN RSW 10 250 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1
INA210BIDCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA210BIDCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA210BIRSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1
INA210BIRSWT UQFN RSW 10 250 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1
INA211AIDCKR SC70 DCK 6 3000 180.0 8.4 2.25 2.4 1.22 4.0 8.0 Q3
INA211AIDCKT SC70 DCK 6 250 180.0 8.4 2.25 2.4 1.22 4.0 8.0 Q3
INA211AIDCKT SC70 DCK 6 250 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3
INA211BIDCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA211BIDCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA212AIDCKR SC70 DCK 6 3000 180.0 8.4 2.25 2.4 1.22 4.0 8.0 Q3
INA212AIDCKT SC70 DCK 6 250 180.0 8.4 2.25 2.4 1.22 4.0 8.0 Q3
INA212BIDCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
PACKAGE MATERIALS INFORMATION
www.ti.com 9-Nov-2013
Pack Materials-Page 1
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
INA212BIDCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA213AIDCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA213AIDCKR SC70 DCK 6 3000 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3
INA213AIDCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA213AIDCKT SC70 DCK 6 250 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3
INA213AIRSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1
INA213AIRSWT UQFN RSW 10 250 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1
INA213BIDCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA213BIDCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA213BIRSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1
INA213BIRSWT UQFN RSW 10 250 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1
INA214AIDCKR SC70 DCK 6 3000 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3
INA214AIDCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA214AIDCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA214AIDCKT SC70 DCK 6 250 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3
INA214AIRSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1
INA214AIRSWT UQFN RSW 10 250 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1
INA214BIDCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA214BIDCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA214BIRSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1
INA214BIRSWT UQFN RSW 10 250 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 9-Nov-2013
Pack Materials-Page 2
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
INA210AIDCKR SC70 DCK 6 3000 195.0 200.0 45.0
INA210AIDCKR SC70 DCK 6 3000 180.0 180.0 18.0
INA210AIDCKT SC70 DCK 6 250 195.0 200.0 45.0
INA210AIDCKT SC70 DCK 6 250 180.0 180.0 18.0
INA210AIRSWR UQFN RSW 10 3000 203.0 203.0 35.0
INA210AIRSWT UQFN RSW 10 250 203.0 203.0 35.0
INA210BIDCKR SC70 DCK 6 3000 180.0 180.0 18.0
INA210BIDCKT SC70 DCK 6 250 180.0 180.0 18.0
INA210BIRSWR UQFN RSW 10 3000 203.0 203.0 35.0
INA210BIRSWT UQFN RSW 10 250 203.0 203.0 35.0
INA211AIDCKR SC70 DCK 6 3000 202.0 201.0 28.0
INA211AIDCKT SC70 DCK 6 250 223.0 270.0 35.0
INA211AIDCKT SC70 DCK 6 250 195.0 200.0 45.0
INA211BIDCKR SC70 DCK 6 3000 180.0 180.0 18.0
INA211BIDCKT SC70 DCK 6 250 180.0 180.0 18.0
INA212AIDCKR SC70 DCK 6 3000 202.0 201.0 28.0
INA212AIDCKT SC70 DCK 6 250 223.0 270.0 35.0
INA212BIDCKR SC70 DCK 6 3000 180.0 180.0 18.0
INA212BIDCKT SC70 DCK 6 250 180.0 180.0 18.0
INA213AIDCKR SC70 DCK 6 3000 180.0 180.0 18.0
PACKAGE MATERIALS INFORMATION
www.ti.com 9-Nov-2013
Pack Materials-Page 3
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
INA213AIDCKR SC70 DCK 6 3000 195.0 200.0 45.0
INA213AIDCKT SC70 DCK 6 250 180.0 180.0 18.0
INA213AIDCKT SC70 DCK 6 250 195.0 200.0 45.0
INA213AIRSWR UQFN RSW 10 3000 203.0 203.0 35.0
INA213AIRSWT UQFN RSW 10 250 203.0 203.0 35.0
INA213BIDCKR SC70 DCK 6 3000 180.0 180.0 18.0
INA213BIDCKT SC70 DCK 6 250 180.0 180.0 18.0
INA213BIRSWR UQFN RSW 10 3000 203.0 203.0 35.0
INA213BIRSWT UQFN RSW 10 250 203.0 203.0 35.0
INA214AIDCKR SC70 DCK 6 3000 195.0 200.0 45.0
INA214AIDCKR SC70 DCK 6 3000 180.0 180.0 18.0
INA214AIDCKT SC70 DCK 6 250 180.0 180.0 18.0
INA214AIDCKT SC70 DCK 6 250 195.0 200.0 45.0
INA214AIRSWR UQFN RSW 10 3000 203.0 203.0 35.0
INA214AIRSWT UQFN RSW 10 250 203.0 203.0 35.0
INA214BIDCKR SC70 DCK 6 3000 180.0 180.0 18.0
INA214BIDCKT SC70 DCK 6 250 180.0 180.0 18.0
INA214BIRSWR UQFN RSW 10 3000 203.0 203.0 35.0
INA214BIRSWT UQFN RSW 10 250 203.0 203.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 9-Nov-2013
Pack Materials-Page 4
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