SS22 thru SS26 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES * Low profile package * Ideal for automated placement * Guardring for overvoltage protection * Low power losses, high efficiency * Low forward voltage drop * High surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C DO-214AA (SMB) * AEC-Q101 qualified * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 20 V to 60 V IFSM 75 A VF 0.50 V, 0.70 V TJ max. 125 C, 150 C MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Device marking code SS22 SS23 SS24 SS25 SS26 UNIT S2 S3 S4 S5 S6 Maximum repetitive peak reverse voltage VRRM 20 30 40 50 60 V Maximum RMS voltage VRMS 14 21 28 35 42 V Maximum DC blocking voltage VDC 20 30 40 50 60 V Max. average forward rectified current at TL (fig. 1) IF(AV) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 75 A Non-repetitive avalanche energy at TA = 25 C, IAS = 2.0 A, L = 10 mH EAS 20 mJ Electrostatic discharge capacitor voltage Human body model: C = 100 pF, R = 1.5 k VC 8.0 kV Voltage rate of change (rated VR) Operating junction temperature range Storage temperature range Revision: 27-Mar-12 dV/dt TJ TSTG 10 000 - 65 to + 125 - 65 to + 150 V/s - 65 to + 150 C C Document Number: 88748 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS22 thru SS26 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) TEST CONDITIONS PARAMETER Maximum instantaneous forward voltage (1) 2.0 A Maximum DC reverse current at rated DC blocking voltage (1) TA = 25 C SYMBOL SS22 SS23 VF SS24 0.5 SS26 UNIT 0.7 V 0.4 IR TA = 100 C SS25 mA 10 Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance (1) SS22 SS23 SS24 RJA 75 RJL 17 SS25 SS26 UNIT C/W Note P.C.B. mounted with 0.55" x 0.55" (14 mm x 14 mm) copper pad areas (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.096 52T 750 7" diameter plastic tape and reel 0.096 5BT 3200 13" diameter plastic tape and reel SS24-E3/52T SS24-E3/5BT (1) 0.096 52T 750 7" diameter plastic tape and reel SS24HE3/5BT (1) 0.096 5BT 3200 13" diameter plastic tape and reel SS24HE3/52T Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 100 Peak Forward Surge Current (A) Average Forward Current (A) 2.0 Resistive or Inductive Load 1.5 1.0 P.C.B. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) Copper Pad Areas 0.5 SS22 thru SS24 SS25 and SS26 At Rated TL 8.3 ms Single Half Sine-Wave 80 60 40 20 0 0 50 70 90 110 130 150 170 1 10 100 Lead Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Surge Current Revision: 27-Mar-12 Document Number: 88748 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS22 thru SS26 www.vishay.com Vishay General Semiconductor 1000 10 Pulse Width = 300 s 1 % Duty Cycle TJ = 150 C 1 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 25 C TJ = 125 C 0.1 100 0.01 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p SS22 thru SS24 SS25 and SS26 SS22 thru SS24 SS25 and SS26 10 0 0.2 0.4 0.6 0.8 1.0 1.4 1.2 1.6 0.1 1 10 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 Instantaneous Reverse Current (mA) 100 SS22 thru SS24 SS25 and SS26 TA = 125 C 10 1 TA = 75 C 0.1 TA = 25 C 0.01 0.001 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Current Characteristics PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.096 (2.44) 0.084 (2.13) 0.220 REF. 0.008 (0.2) 0 (0) 0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21) Revision: 27-Mar-12 Document Number: 88748 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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