WESTCODE SEMICONDUCTORS Ge) WEST 35E D M@ 9709955 o002401 5 MEWESB7-Z2s~- Q] Technical Publication TR220C CODE @ SEMICONDUCTORS High Frequency Inverter Grade Capsule Thyristor Type R220C distributed amplified gate for high di/dt and low switching losses 715 amperes average: up to 1200 volts VaawVorm Ratings (Maximum values at 125C Tj unless stated otherwise) Issue 2 July 1984 RATING CONDITIONS SYMBOL 55C heatsink temperature 715 A Average on-state current Half sine wave (double side cooled) hay) 85C heatsink temperature 250 A (single side cooled) R.M.S. on-state current 25C heatsink temperature, double side cooled br iRms) 1475 A Continuous on-state current 25C heatsink temperature, double side cooled br 1135 A Peak one-cycle surge 10ms duration, 60% Vary re-applied sm) 9400 A (non-repetitive) on state current 10ms duration, Vax 10 volts brsmi2) 10800 A . ae 10ms duration, Vax 10 volts Ht (2) 580000 A2s Maximum permissible surge energy 3ms duration, V,< 10 volts it 433000 A Peak forward gate current Anode positive with respect to cathode Irom 36A Peak forward gate voitage Anode positive with respect to cathode VeGm 16V Peak reverse gate voltage Veco 5V Average gate power Pg 2W Peak gate power 100s. pulse width Pom 120 W Rate of rise of off-state voltage To 80% Vpam gate open-circuit dv/dt *200V/ys Rate of rise of on-state current di/dt (1) 1000A/yus (repetitive) Gate drive 20 voits, 20 ohms with t, < 1yus. Rate of rise of on-state current Anode voltage > 80% Vorm di/dt (2) 1500A/s (non-repetitive) Operating temperature range Ths 40 + 125C Storage temperature range Tstg 40+ 150C Characteristics (Maximum values at 125C Tj unless stated otherwise) CHARACTERISTIC CONDITIONS SYMBOL Peak on-state voltage At 1400 A, bry Vim 1.96 V Forward conduction threshold voltage Vo 1.50 V Forward conduction slope resistance r 0.33 mQ Repetitive peak off-state current At Vorm lonm 7OmA Repetitive peak reverse current At Vara IRAM 70mA Maximum gate current required to fire all devices lot 300 mA Maximum gate voltage required to fire all devices } At 25C, V,=10V, |,=2A { Vor 3V Maximum holding current ha TA Maximum gate voltage which will not trigger any device Veo 0.25 V Stored charge lym = 1000A, dir/dt 60A/ys Vy = SOV, 50% chord value Ore 150 we Circuit commutated turn-off time |5y4 = 1000A 200V /ys to 80% Vorm| ta 20-30 us available down to dir/dt =60A/pS, Vay =50V) 20V/us to 80% Vorm| ta typical 15-25 ps Thermal resistance, junction to heat sink, Double side cooled Re 0.047C/W for a device with a maximum forward volt Single side cooled hihs) 0.094C /W drop characteristic VOLTAGE CODE HO2 H04 HO6 HO8 H10 H12 Repetitive peak voltages Varam Vorm Non-repetitive peak off-state voltage Vosm 200 400 600 800 1000 1200 Non-repetitive peak reverse biocking voltage | Vasu | 300 500 700 900 1100 1300 Ordering Information (Please quote device code as explained below 11 digits) R 22 0 C ee @ e e 0 dv/dt code to 80% Vora Turn-off time Fixed Voltage Code C=20V/ps E= 100V/us H = 30 ys J=25 us type code (see ratings) D=S0V/us F=200V/us | K=20us L=15 ys Typical code: R220CHO8FJO = 800 Vary 800 Voay 200 V/us dv/dt to 80% Vppy 25 ns turn-off *Other values of dv/dt up to 1000 V/s, and turn-off time may be available. ; 9000-3991 /WESTCODE SEMICONDUCTORS 1. {a) (b) {c) (d) {e) (a) INTRODUCTION This series of thyristors employs diffused, interdigitated 38 mm slices. Fast turn-on, high di/dt capability and low recovered charge are the important features of this series. The slice mounting is cold-weld capsule. NOTES ON THE RATINGS Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 1500 A/ys at any time during turn-on on a non-repetitive basis. For repetitive performance the on-state rate of rise of current must not exceed 1000 A/ys at any time during turn-on. Note that these values of current rate of rise apply to the circuit external to the device and its specified snubber network and device current rates of rise will be higher. {b) Square wave ratings These ratings are given for leading edge linear rates of rise of forward current of 100 and 500 A/us. Duty Cycle Lines The 100% duty cycle line appears on all these ratings. These frequency ratings are presented in the form that all duty cycles may be represented by straight parallel lines. Maximum operating Frequency The maximum operating frequency, fmax, is set by the time required for the thyristor to turn off (tq) and for the off-state voltage to reach full value (tv), i.e. 4. 1 toulse +tq+tv Energy per pulse characteristics These curves enable rapid estimation of device dissipation to be obtained for conditions not 5. covered by the frequency ratings. Let E, be the Energy per pulse for a given current and pulse width, in joules. Then Way=E, xf. max REVERSE RECOVERY LOSS 6. On account of the number of circuit variables affecting reverse recovery voltage, no allowance for reverse recovery loss has been made in these ratings. The following procedure is recommended for use where it is necessary to include reverse recovery loss. Determination by Measurement (a) From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse voltage present during recovery, an instantaneous reverse recovery loss waveform (b) must be constructed. Let the area under this waveform be A joules per pulse. A new heat sink temperature can then be evaluated from: 35E D M@ 9709955 0002402 7 MBWESB TAsn F106 Tsink (new) = Tsink (original) -A ( + Rin x \ where r, = 8.53 x 10-5/t t=duration of reverse recovery loss per pulse in microseconds A= Area under reverse loss waveform per pulse in joules (W.S.) f =rated frequency at the original heat sink temperature The total dissipation is now given by Witot) = Wioriginal) + A X f Design Method In circumstances where it is not possible to measure voltage and current conditions, or for design purposes, the additional losses may be estimated from figure 7. A typical R-C snubber network is connected across the thyristor to control the transient reverse voltage waveform. Let E be the value of energy per reverse cycle in joules (figure 7). Let f be the operating frequency in Hz then Tink New = Tsinx Original ER,, x f where Tsing New is the required maximum heat sink temperature and Tsinx Original is the heat sink temperature given with the frequency ratings. GATE DRIVE The recommended gate drive is 20 V, 20 ohms with a short-circuit current rise time of not more than 1 4s. This gate drive must be applied when using the full di/dt capability of the device. THE DV/DT SUPPRESSION NETWORK The effect of a conventional resistor-capacitor snubber of 0.1 F 10 ohms has been included in these ratings and all rating di/dt values apply to the circuit external to the thyristor and its suppression network. NOTE 1 REVERSE RECOVERY LOSS BY MEASUREMENT This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring the charge care must be taken to ensure that: a.c. coupled devices such as current transformers are not affected by prior passage of high amplitude forward current. The measuring oscilloscope has adequate dynamic range typically 100 screen heights to cope with the initial forward current without overload.WESTCODE SEMICONDUCTORS 39E D MM 9709955 0002403 4 MMUESBT-gs-g, 100 100 Ths = 85C 500 A/yus square wave Ths = 85C 100 A/us square wave 10 10 0.1 0.1 = N a o ZS S 5 5 = 0.01 = 0.01 0.01 0.1 1 10 0.01 0.1 1 10 pulse width, m.secs pulse width, m.secs Figure 1 Frequency v. pulse width Figure 2 Frequency v. pulse width 100 100 Ths = 55C Ths = 55C 500 A/us 100 A/us square wave square wave 10 10 1 1 0.1 0.1 N N z o o a] a] 5 S 0.01 = 0.01 0.01 0.1 1 10 0.01 0.1 1 10 pulse width, m.secs pulse width, m.secs Figure 3 Frequency v. pulse width Figure 4 Frequency v. pulse width 3 eoWESTCODE SEMICONDUCTORS 35 D MM 9709955 0002404 0 MBWESB TASA 100 100 10 10 o 91 wo 0.1 @ 2 Ss 2 8 Tj = 125C 2 Tj = 125C g 500 A/us 3 100 A/us a square wave a square wave 5 & 3 5 5 0.01 S 0.01 0.01 0.1 1 10 0.01 0.1 1 10 pulse width, m.secs pulse width, m.secs Figure 5 Energy/pulse v. pulse Figure 6 Energy/pulse v. pulse width width snubber connected 0.1 F 10 Q 0.5 peak reverse voltage Vavm = 0.67 Varm max. (804 volts) 0.3 0.1 2 2 a o Q a energy per pulse, joules So 2 10 20 50 100 200 500 commutating di/dt, A/yus Figure 7 Max. reverse recovery energy loss per pulse at 125C junction temperature and Vay = 804 volts.WESTCODE SEMICONDUCTORS 35E D MM 97095955 0002405 2 MB WESB 2 100 1 100 Ths = 85C sine wave 10 10 0.1 a 0.1 2 a] N 2 z a 3 Tj = 125C > 2 : 3 a sine wave > 2 m a 0.01 0.01 0.01 0.1 1 10 0.01 0.1 1 10 pulse width, m.secs pulse width, m.secs Figure 8 Frequency v. pulse width Figure 9 Energy/pulse v. pulse width 400 100 Ths = 55C sine wave 300 10 200 1 8 E Ss > } oO 2 3S E 0.1 5 400 o nN cy 90 = 3 eo 5 5 80 > 2 S 3 = 0.01 70 0.01 0.1 1 10 20 30 40 60 80 100 200 pulse width, m.secs commutating di/dt, A/us Figure 10 Frequency v. pulse Figure 11 Maximum recovered width charge at 125C junction temperaturetransient thermal impedance, C/W gate voltage, Vg, volts peak on-state current, amperes WESTCODE SEMICONDUCTORS 35E D MM 9709955 O00e40b 4 MB WESB 7-26-2) 0.1 0.05 100 0.01 10 3 0.001 total peak half-sine surge current, k.amperes 0.001 0.01 0.1 1 10 time, seconds Figure 12 Junction to heatsink transient thermal impedance 18 16 Vo pk. max. (Ig tr= 14 g d.c. max. 12 10 Pg max. (pulse 8 120 W 6 4 naracte lie within these curves 2 tor cetais of Pg max. d.c.=2 igue 1S 0 0.1 0305 1 3 5 10 30 50 gate current, Ig, amperes Figure 14 Gate characteristics at 25C junction temperature 10000 5000 g 8 100 1416 18 20 22 24 26 28 3.0 on-state voltage, volts Figure 16 Limit on-state current at 125C 1 m.secs 10 0.5 5 50 cycles at 50 Hz 100 duration of surge Figure 13 Max. non-repetitive surge current 107 108 maximum [2t (amps2 secs) a at initial junction temperature 125C Note: This rating must not be interpreted as an intermittent rating gate voltage, Vg, volts o w h _ 0 2 2 a 2 = s no device will Figure 15 Gate triggering Trigger points of all thyristors lie within the 400 600 gate current, Ig, milliamperes characteristics. areas shown Gate drive load line must lie outside appropriate |,/Vg rectangle COMPRESSED HEIGHT dimensions in mm (inches} Mounting force: 1000-2000 kaf Weight: 340 grams O58 5123) 2774 1106 1) o OM 163) 134 [| =S, iv oad L 015106 FOR AMP REC . (03 "| ou No 50596 1 036-19 (ta 114+ O75) 2 HOLES TO - 200AC In the interest of product improvement, Westcode reserves the nght to change specifications at any time without notice. WESTCODE SEMICONDUCTORS LTD P.O. Box 57 Chippenham Wiltshire SN15 1JL England Telephone Chippenham (0249) 654141 Telex 44751 Fe HAWKER SIDDELEY Westinghouse Brake and Signal Co. Ltd. Printed by The Pheon Press, Gristot