2SA1470 / 2SC3747 Ordering number : EN1972C SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1470 / 2SC3747 60V / 7A High-Speed Switching Applications Applications * * * * Various inductance lamp drivers for electrical equipment. Inverters, converters (flash, fluorescent lamp lighting circuit). Power amp (high power car stereo, motor controller). High-speed switching (switching regulator, driver). Features * * * * Low saturation voltage. Excellent current dependence of hFE. Short switching time. Micaless package facilitating mounting. Specifications ( ) : 2SA1470 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)80 V Collector-to-Emitter Voltage VCEO (--)60 V Emitter-to-Base Voltage VEBO (--)5 V IC (--)7 A ICP (--)10 A 2 W Collector Current Collector Current (Pulse) Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25C 25 W 150 C --55 to +150 C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE Conditions VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A VCE=(--)2V, IC=(--)1A * : The 2SA1470/2SC3747 are classified by 1A hFE as follows : Rank Q R S hFE 70 to 140 100 to 200 140 to 280 Ratings min typ max 70* Unit (--)0.1 mA (--)0.1 mA 280* Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 83006 MS IM TC-00000113 / 72506FA MS IM TC-00000059 / O3103TN (KT) / 71598HA (KT) / 3277KI / N265KI, TS No.1972-1/4 2SA1470 / 2SC3747 Continued from preceding page. Parameter Symbol Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage fT VCE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-On Time Storage Time Fall Time Ratings Conditions min VCE=(--)5V, IC=(--)1A IC=(--)3.5A, IB=(--)0.175A IC=(--)1mA, IE=0A typ Unit max 100 MHz (--)0.4 IC=(--)1mA, RBE= IE=(--)1mA, IC=0A V (--)80 V (--)60 V (--)5 V ton tstg See specified Test Circuit. 0.1 s See specified Test Circuit. 0.5 s tf See specified Test Circuit. 0.1 s Package Dimensions Switching Time Test Circuit unit : mm (typ) 7508-002 IB1 PW=20s D.C.1% 4.5 10.0 2.8 3.2 INPUT RB RL 6.67 VR 7.2 3.5 OUTPUT IB2 16.0 50 + 18.1 1 2 3 For PNP, the polarity is reversed. 0.7 1 : Base 2 : Collector 3 : Emitter 2.4 2.55 SANYO : TO-220ML IC -- VBE --4 --3 25C --40C Ta=1 20C --5 --2 --1 6 5 4 3 25C --40C --6 2SC3747 VCE=2V 7 Collector Current, IC -- A --7 IC -- VBE 8 2SA1470 VCE= --2V C --8 Ta=12 0 2.55 470F VCC=20V 20IB1= --20IB2=IC=3A 14.0 5.6 1.6 1.2 0.75 Collector Current, IC -- A + 100F VBE= --5V 2 1 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 Base-to-Emitter Voltage, VBE -- V ITR03658 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 1.4 ITR03659 No.1972-2/4 2SA1470 / 2SC3747 hFE -- IC 1000 2SA1470 VCE= --2V 7 3 Ta=120C 2 25C 5 3 --40C 100 7 5 3 2 7 5 --0.01 2 3 5 2 5 2 3 5 --40C 100 7 5 3 2 7 5 0.01 2 --10 ITR03660 f T -- IC 100 7 5 3 2 10 7 3 5 0.1 2 3 5 2 1.0 3 5 2 10 ITR03661 f T -- IC 2 Gain-Bandwidth Product, f T -- MHz 2SA1470 VCE= --5V 2 Collector Current, IC -- A 2SC3747 VCE=5V 100 7 5 3 2 10 7 5 5 7 --0.01 2 3 5 --0.1 2 3 5 --1.0 Collector Current, IC -- A 2 3 5 7 --10 3 3 2 --1.0 5 3 2 --0.1 5 3 2 3 5 2 1.0 3 5 10 ITR03663 2SC3747 IC / IB=20 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 2 0.1 VCE(sat) -- IC 10 2SA1470 IC / IB=20 5 Collector Current, IC -- A VCE(sat) -- IC --10 2 0.01 ITR03662 3 2 1.0 5 3 2 0.1 5 3 2 --0.01 --0.01 2 5 3 --0.1 2 3 5 --1.0 2 3 Collector Current, IC -- A 5 0.01 0.01 --10 2 ITR03664 ASO 2 7 5 3 1 10 ms m s 2 2 --0.1 Tc=25C 7 Single Pulse 5 2 3 2 5 7 --10 3 5 7 --100 Collector-to-Emitter Voltage, VCE -- V ITR03666 1.0 2 3 5 2 10 ITR03665 2SC3747 ICP=10A 7 5 IC=7A 1 10 ms m s 3 2 1.0 7 10 0m 5 s n n io at s 5 io at er er 3 0m 3 op op 10 2 C C 7 5 0.1 D D --1.0 5 ASO 10 IC= --7A 3 2 2SA1470 ICP= --10A --10 2 Collector Current, IC -- A Collector Current, IC -- A Gain-Bandwidth Product, f T -- MHz 3 --0.1 --1.0 Collector Current, IC -- A 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Ta=120C 25C 2 10 10 Collector Current, IC -- A 2SC3747 VCE=2V 7 DC Current Gain, hFE DC Current Gain, hFE 5 hFE -- IC 1000 3 2 0.1 7 5 Tc=25C Single Pulse 2 3 5 7 10 2 3 5 7 100 Collector-to-Emitter Voltage, VCE -- V ITR03667 No.1972-3/4 2SA1470 / 2SC3747 PC -- Ta 2.5 PC -- Tc 30 2.0 1.5 No he at sin k 1.0 2SA1470 / 2SC3747 Collector Dissipation, PC -- W Collector Dissipation, PC -- W 2SA1470 / 2SC3747 0.5 0 25 20 15 10 5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT11350 0 20 40 60 80 100 120 140 Case Temperature, Tc -- C 160 IT11352 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2006. Specifications and information herein are subject to change without notice. PS No.1972-4/4