2SA1470 / 2SC3747
No.1972-1/4
Applications
•Various inductance lamp drivers for electrical equipment.
•Inverters, converters (flash, fluorescent lamp lighting circuit).
•Power amp (high power car stereo, motor controller).
•High-speed switching (switching regulator, driver).
Features
•Low saturation voltage.
•Excellent current dependence of hFE.
•Short switching time.
•Micaless package facilitating mounting.
Specifications ( ) : 2SA1470
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--)80 V
Collector-to-Emitter Voltage VCEO (--)60 V
Emitter-to-Base Voltage VEBO (--)5 V
Collector Current IC(--)7 A
Collector Current (Pulse) ICP (--)10 A
Collector Dissipation PC2W
Tc=25°C25W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=(--)40V, IE=0A (--)0.1 mA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)0.1 mA
DC Current Gain hFE VCE=(--)2V, IC=(--)1A 70* 280*
* : The 2SA1470/2SC3747 are classified by 1A hFE as follows : Continued on next page.
Rank Q R S
hFE 70 to 140 100 to 200 140 to 280
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN1972C
83006 MS IM TC-00000113 / 72506FA MS IM TC-00000059 / O3103TN (KT) / 71598HA (KT) / 3277KI / N265KI, TS
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
2SA1470 / 2SC3747
PNP / NPN Epitaxial Planar Silicon Transistors
60V / 7A High-Speed Switching
Applications
2SA1470 / 2SC3747
No.1972-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Gain-Bandwidth Product fTVCE=(--)5V, IC=(--)1A 100 MHz
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)3.5A, IB=(--)0.175A (--)0.4 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)1mA, IE=0A (--)80 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞(--)60 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)1mA, IC=0A (--)5 V
T urn-On Time ton See specified Test Circuit. 0.1 µs
Storage Time tstg See specified Test Circuit. 0.5 µs
Fall T ime tfSee specified Test Circuit. 0.1 µs
Package Dimensions Switching Time Test Circuit
unit : mm (typ)
7508-002
IC -- VBE
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
ITR03658
--
0.2
--
0.4
--
0.6
--
0.8
--
1.0
--
1.2
--
1.4
00
--
1
--
2
--
3
--
4
--
5
--
6
--
7
--
8
ITR03659
1.0 1.2 1.40.6 0.80.2 0.40
0
1
2
3
4
5
6
7
8
2SA1470
VCE= --2V 2SC3747
VCE=2V
Ta=120°C
25
°C
--40
°C
Ta=120
°C
25
°C
--40
°C
10.0 3.2 4.5 2.8
16.0
18.1
5.6
14.0
3.5
7.2
2.4
1.6
1.2
0.7
0.75
2.55 2.55
123
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
PW=20µs
D.C.≤1%
INPUT
VCC=20V
50Ω
RB6.67Ω
IB1
IB2
100µF 470µF
VBE= --5V
VR
++
RL
OUTPUT
20IB1= --20IB2=IC=3A
For PNP, the polarity is reversed.
2SA1470 / 2SC3747
No.1972-3/4
ITR03664
5--0.1 --1.0
2
--0.01 2335--10
2235 50.1 1.0
2
0.01 2335 10
2235
--0.1
--0.01
3
5
2
--1.0
3
5
2
--10
3
5
2
0.1
0.01
3
5
2
1.0
3
5
2
10
3
5
2
2SA1470
IC / IB=
20
2SA1470
ITR03665
2SC3747
IC / IB=
20
2SC3747
ITR03666
DC operation
10ms
100ms
--10
5
7
2
3
5
3
5
--100
7
22 35735
--0.1
7
7
2
2
--1.0
--10
ICP= --10A
IC= --7A
1ms
ITR03667
DC operation
10ms
100ms
10
5
7
2
3
5
3
5
100
7
22 35735
0.1
7
7
2
2
1.0
10
ICP=10A
IC=7A
1ms
2SA1470
VCE= --5V
--0.01 --0.1
23 35 --1.0
7--10
52352
7
10
5
7
100
5
3
2
2
ITR03662
2SC3747
VCE=5V
0.01 0.1
23 375 1.0
23 5 10
52
7
10
5
7
100
5
3
2
2
ITR03663
2SA1470
VCE= --2V 2SC3747
VCE=2V
1000
100
10
ITR03660
23523522
3
5
--0.01 --0.1 --1.0 --10
5
7
2
3
5
7
2
3
5
7
0.01 0.1 1.0
23 5 23 5 10
2235
7
100
10
5
7
1000
5
3
2
3
7
5
2
ITR03661
Ta=120
°C
25
°C
--40
°
C
Ta=120
°C
25
°C
--40
°
C
hFE -- IChFE -- IC
fT -- ICfT -- IC
Collector Current, IC -- A
DC Current Gain, hFE
Collector Current, IC -- A
DC Current Gain, hFE
Collector Current, IC -- A
Gain-Bandwidth Product, fT -- MHz
Collector Current, IC -- A
Gain-Bandwidth Product, fT -- MHz
VCE(sat) -- IC
VCE(sat) -- IC
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector Current, IC -- A
A S O
Tc=25°C
Single Pulse
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
A S O
Tc=25°C
Single Pulse
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
2SA1470 / 2SC3747
No.1972-4/4PS
0 20 40 60 80 100 120 140 160
0
0.5
2.0
1.0
1.5
2.5
IT11350 IT11352
0 20 40 60 80 100 120 140 160
0
5
20
25
10
15
30
2SA1470 / 2SC37472SA1470 / 2SC3747
PC -- Ta
No heat sink
Ambient Temperature, Ta -- °C
Collector Dissipation, PC -- W
PC -- Tc
Case Temperature, Tc -- °C
Collector Dissipation, PC -- W
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