© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 4
1Publication Order Number:
NTST30100CT/D
NTST30100CT,
NTSB30100CT-1G,
NTSJ30100CTG,
NTSB30100CTG
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Exceptionally Low VF = 0.455 V at IF = 5 A
Features
•Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
•Fast Switching with Exceptional Temperature Stability
•Low Power Loss and Lower Operating Temperature
•Higher Efficiency for Achieving Regulatory Compliance
•Low Thermal Resistance
•High Surge Capability
•Pb−Free and Halide−Free Packages are Available
Typical Applications
•Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
•High Frequency and DC−DC Converters
•Freewheeling and OR−ing diodes
•Reverse Battery Protection
•Instrumentation
Mechanical Characteristics
•Case: Epoxy, Molded
•Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
1
3
2, 4
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See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
PIN CONNECTIONS
TO−220AB
CASE 221A
STYLE 6
3
4
123
4
12
I2PAK
CASE 418D
STYLE 3
TO−220FP
CASE 221AH
3
4
12
D2PAK
CASE 418B
NTST30100CT, NTSB30100CT−1G, NTSJ30100CTG, NTSB30100CTG
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2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100 V
Average Rectified Forward Current
(Rated VR, TC = 115°C) Per device
Per diode
IF(AV) 30
15
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 110°C) Per device
Per diode
IFRM 60
30
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM 160 A
Operating Junction Temperature TJ−40 to +150 °C
Storage Temperature Tstg −40 to +150 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating Symbol
NTST30100CTG,
NTSB30100CT−1G NTSB30100CTG NTSJ30100CTG Unit
Maximum Thermal Resistance per Diode
Junction−to−Case
Junction−to−Ambient
RqJC
RqJA
2.5
70
1.14
46.6
4.09
105
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating Symbol Typ Max Unit
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 5 A, TJ = 25°C)
(IF = 7.5 A, TJ = 25°C)
(IF = 15 A, TJ = 25°C)
(IF = 5 A, TJ = 125°C)
(IF = 7.5 A, TJ = 125°C)
(IF = 15 A, TJ = 125°C)
vF0.516
0.576
0.734
0.455
0.522
0.627
−
−
0.85
−
−
0.68
V
Maximum Instantaneous Reverse Current (Note 1)
(VR = 70 V, TJ = 25°C)
(VR = 70 V, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
IR7.2
8.0
65
20
500
35
mA
mA
mA
mA
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
NTST30100CT, NTSB30100CT−1G, NTSJ30100CTG, NTSB30100CTG
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3
TYPICAL CHARACTERISITICS
Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current
Figure 3. Typical Junction Capacitance
vF
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100
1.0
0.1 20
VR, REVERSE VOLTAGE (VOLTS)
0.001
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
I
0.6 0.8 1.0 40 60
0 0.2 0.4 80
TA = 25°C
TA = 125°C
TA = 150°C
0.01
0.1
TA = 25°C
TA = 125°C
TA = 150°C
1.0
10
100
, REVERSE CURRENT (mA)
R
1.2 100
0.1
VR, REVERSE VOLTAGE (VOLTS)
10000
1000
10
110
100
TJ = 25°C
10
30 50 70 90
CJ, JUNCTION CAPACITANCE (pF)
Figure 4. Current Derating per Leg
0
5
10
15
20
25
30
0 20 40 60 80 100 120 140
TC, CASE TEMPERATURE (°C)
SQUARE WAVE
dc
RqJC = 1.3°C/W
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating
0
5
10
15
20
25
30
35
40
45
50
55
60
0 20 40 60 80 100 120 140
TC, CASE TEMPERATURE (°C)
SQUARE WAVE
dc
RqJC = 1.3°C/W
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 6. Forward Power Dissipation
0
5
10
15
20
25
30
0 2 10 12 14 16 18
IF(AV), AVERAGE FORWARD CURRENT (A)
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
SQUARE
WAVE
dc
TA = 150°C
IPK/IAV = 5
IPK/IAV = 10
IPK/IAV = 20
468
1.4 1.6 1.8
100
NTST30100CT, NTSB30100CT−1G, NTSJ30100CTG, NTSB30100CTG
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4
TYPICAL CHARACTERISITICS
0.01
0.1
1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
10%
5%
2%
20%
1%
50% Duty Cycle
Single Pulse
t, Pulse Time (sec)
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
Figure 7. Typical Transient Thermal Response, Junction−to−Case for NTST30100CT and NTSB30100CT−1G
10%
5%
2%
20%
1%
50% Duty Cycle
Single Pulse
t, Pulse Time (sec)
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
0.001
0.01
0.1
1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 8. Typical Transient Thermal Response, Junction−to−Case for NTSJ30100CTG
Figure 9. Typical Transient Thermal Response, Junction−to−Case for NTSB30100CTG
0.01
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
10%
5%
2%
20%
1%
50% Duty Cycle
Single Pulse
t, Pulse Time (sec)
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
NTST30100CT, NTSB30100CT−1G, NTSJ30100CTG, NTSB30100CTG
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5
ORDERING INFORMATION
Device Package Shipping
NTST30100CTG TO−220AB
(Pb−Free)
50 Units / Rail
NTSB30100CT−1G I2PAK
(Pb−Free)
50 Units / Rail
NTSJ30100CTG TO−220FP
(Halide−Free)
50 Units / Rail
NTSB30100CTG D2PAK
(Pb−Free)
50 Units / Rail
NTSB30100CTT4G D2PAK
(Pb−Free)
800 / Tape & Reel
MARKING DIAGRAMS
AKA
TS30100CG
AYWW
A = Assembly Location
Y = Year
WW = Work Week
AKA = Polarity Designator
x = G or H
G = Pb−Free Package
H = Halide−Free Package
AY WW
TS30100CG
AKA
AY WW
TS30100CG
AKA
AY WW
TS30100Cx
AKA
TO−220AB TO−220FP I2PAK D2PAK
NTST30100CT, NTSB30100CT−1G, NTSJ30100CTG, NTSB30100CTG
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6
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
I2PAK (TO−262)
CASE 418D−01
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
−T−
W
G
K
A
C
E
V
J
H
123
4
SEATING
PLANE
D3 PL
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.335 0.380 8.51 9.65
B0.380 0.406 9.65 10.31
C0.160 0.185 4.06 4.70
D0.026 0.035 0.66 0.89
E0.045 0.055 1.14 1.40
G0.100 BSC 2.54 BSC
H0.094 0.110 2.39 2.79
J0.013 0.025 0.33 0.64
S0.390 REF 9.90 REF
V0.045 0.070 1.14 1.78
W0.522 0.551 13.25 14.00
−B−
M
B
M
0.13 (0.005) T
S
F
F0.122 REF 3.10 REF
K0.500 0.562 12.70 14.27
NTST30100CT, NTSB30100CT−1G, NTSJ30100CTG, NTSB30100CTG
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7
PACKAGE DIMENSIONS
TO−220 FULLPACK, 3−LEAD
CASE 221AH
ISSUE B
DIM MIN MAX
MILLIMETERS
D14.70 15.30
E9.70 10.30
A4.30 4.70
b0.54 0.84
P3.00 3.40
e
L1 --- 2.80
c0.49 0.79
L12.70 14.73
b2 1.10 1.40
Q2.80 3.20
A2 2.50 2.70
A1 2.50 2.90
H1 6.70 7.10
E
Q
L1
b2
e
D
L
P
123
4
b
SEATING
PLANE
A
A1
H1
A2
c
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH
AND GATE PROTRUSIONS. MOLD FLASH AND GATE
PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE TO BE MEASURED AT OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR
PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION
SHALL NOT EXCEED 2.00.
2.54 BSC
M
0.14 M
A
A
B
C
E/2
M
0.25 M
AB
3X
C
3X
B
NOTE 3
NTST30100CT, NTSB30100CT−1G, NTSJ30100CTG, NTSB30100CTG
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8
PACKAGE DIMENSIONS
SEATING
PLANE
S
G
D
−T−
M
0.13 (0.005) T
231
4
3 PL
K
J
H
V
E
C
A
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.340 0.380 8.64 9.65
B0.380 0.405 9.65 10.29
C0.160 0.190 4.06 4.83
D0.020 0.035 0.51 0.89
E0.045 0.055 1.14 1.40
G0.100 BSC 2.54 BSC
H0.080 0.110 2.03 2.79
J0.018 0.025 0.46 0.64
K0.090 0.110 2.29 2.79
S0.575 0.625 14.60 15.88
V0.045 0.055 1.14 1.40
−B−
M
B
W
W
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
F0.310 0.350 7.87 8.89
L0.052 0.072 1.32 1.83
M0.280 0.320 7.11 8.13
N0.197 REF 5.00 REF
P0.079 REF 2.00 REF
R0.039 REF 0.99 REF
M
L
F
M
L
F
M
L
F
VARIABLE
CONFIGURATION
ZONE RN P
U
VIEW W−W VIEW W−W VIEW W−W
123
D2PAK 3
CASE 418B−04
ISSUE K
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NTST30100CT/D
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