MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
TISP7125F3 THRU TISP7180F3,
TISP7240F3 THRU TISP7380F3
MEDIUM & HIGH-VOLTAGE TRIPLE ELEMENT
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Device Symbol
SL Package (Top View)
P Package (Top View)
Device VDRM
V
V(BO)
V
‘7125F3 100 125
‘7150F3 120 150
‘7180F3 145 180
‘7240F3 180 240
‘7260F3 200 260
‘7290F3 220 290
‘7320F3 240 320
‘7350F3 275 350
‘7380F3† 270 380
† For new designs use ‘7350F3 instead of ‘7380F3
Waveshape Standard ITSP
A
2/10 GR-1089-CORE 190
8/20 IEC 61000-4-5 175
10/160 FCC Part 68 110
10/700 FCC Part 68
ITU-T K.20/21 70
10/560 FCC Part 68 50
10/1000 GR-1089-CORE 45
Patented Ion-Implanted Breakdown Region
- Precise DC and Dynamic Voltages
Planar Passivated Junctions
- Low Off-State Current.................................<10 µA
Rated for International Surge Wave Shapes
- Single and Simultaneous Impulses
How To Order
Description
D Package (Top View)
The TISP7xxxF3 series are 3-point overvoltage protectors
designed for protecting against metallic (differential mode) and
simultaneous longitudinal (common mode) surges. Each terminal
pair has the same voltage limiting values and surge current
capability. This terminal pair surge capability ensures that the
protector can meet the simultaneous longitudinal surge require-
ment which is typically twice the metallic surge requirement.
.............................................. UL Recognized Component
1
2
3
45
6
7
8G
NU
NU
G
NC
T
R
NC
R
NC
T
NC
G
NU
NU
G
1
2
3
45
6
7
8
NC - No internal connection.
NU - Non-usable; no external electrical connection should be made
to these pins.
Specified ratings require connection of pins 5 and 8.
MD1XAB
1
2
3
T
G
R
G
TR
SD7XAB
Terminals T, R and G correspond to the
alternative line designators of A, B and C
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Device Package Carrier
TISP7xxxF3 D, Small-outline Tape and Reel TISP7xxxF3DR
Tube TISP7xxxF3D
TISP7xxxF3 P, Plastic DIP Tube TISP7xxxF3P
TISP7xxxF3 SL, Single-in-line Tube TISP7xxxF3SL
TISP7xxxF3DR-S
TISP7xxxF3D-S
TISP7xxxF3P-S
TISP7xxxF3SL-S
For Standard
Termination Finish
Order As
For Lead Free
Termination Finish
Order As
*RoHS COMPLIANT
VERSIONS
AVAILABLE
MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Description (continued)
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Each terminal pair has a symmetrical voltage-triggered thyristor characteristic. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the
diverted current subsides.These protectors are guaranteed to voltage limit and withstand the listed lightning surges in both polarities.
These medium and high voltage devices are offered in nine voltage variants to meet a range of battery and ringing voltage requirements. They
are guaranteed to suppress and withstand the listed international lightning surges on any terminal pair. Similar devices with working voltages of
58 V and 66 V are detailed in the TISP7072F3, TISP7082F3 data sheet.
Rating Symbol Value Unit
Repetitive peak off-state voltage, 0 °C < TA < 70 °C
‘7125F3
‘7150F3
‘7180F3
‘7240F3
‘7260F3
‘7290F3
‘7320F3
‘7350F3
‘7380F3
VDRM
100
120
145
180
200
220
240
275
270
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
IPPSM A
1/2 (Gas tube differential transient, 1/2 voltage wave shape) 330
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 190
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 Ω resistor) 100
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 175
10/160 (FCC Part 68, 10/160 voltage wave shape) 110
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous) 95
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape) 70
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single) 70
5/320 (FCC Part 68, 9/720 voltage wave shape, single) 70
10/560 (FCC Part 68, 10/560 voltage wave shape) 50
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) 45
Non-repetitive peak on-state current, 0 °C < TA < 70 °C(see Notes 1 and 3)
50 Hz, 1 s D Package
P Package
SL Package
ITSM
4.3
5.7
7.1
A
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A diT/dt 250 A/µs
Junction temperature TJ-65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
NOTES: 1.
2. See Thermal Information for derated IPPSM values 0 °C < TA < 70 °C and Applications Information for details on wave shapes.
3. Above 70 °C, derate ITSM linearly to zero at 150 °C lead temperature.
Initially, the TISP device must be in thermal equilibrium at the specified T . The impulse may be repeated after the TISP device
returns to its initial conditions. The rated current values may be applied either to the R to G or to the T to G or to the T to R
terminals. Additionally, both R to G and T to G may have their rated current values applied simultaneously (In this case the total
G terminal current will be twice the above rated current values).
A®®
MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Electrical Characteristics for all Terminal Pairs, TA = 25 °C (Unless Otherwise Noted)
Parameter Test Conditions Min Typ Max Unit
IDRM
Repetitive peak off-
state current VD=V
DRM, 0 °C<T
A<70°C±10 µA
V(BO) Breakover voltage dv/dt = ±250 V/ms, RSOURCE =300 Ω
‘7125F3
‘7150F3
‘7180F3
‘7240F3
‘7260F3
‘7290F3
‘7320F3
‘7350F3
‘7380F3
±125
±150
±180
±240
±260
±290
±320
±350
±380
V
V(BO)
Impulse breakover
voltage
dv/dt ≤±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
‘7125F3
‘7150F3
‘7180F3
‘7240F3
‘7260F3
‘7290F3
‘7320F3
‘7350F3
‘7380F3
±143
±168
±198
±269
±289
±319
±349
±379
±409
V
I(BO) Breakover current dv/dt = ±250 V/ms, RSOURCE =300 Ω±0.1 ±0.8 A
VTOn-state voltage IT=±5A, t
W=100 µs±5V
IHHolding current IT=±5A, di/dt=-/+30mA/ms ±0.15 A
dv/dt Critical rate of rise of
off-state voltage Linear voltage ramp, Maximum ramp value < 0.85VDRM ±5kV/µs
IDOff-state current VD=±50 V ±10 µA
Coff Off-state capacitance
f=1MHz, V
d=1V rms, V
D=0
f=1MHz, V
d=1V rms, V
D=-1V
f=1MHz, V
d=1V rms, V
D=-2V
f=1MHz, V
d=1V rms, V
D=-5V
f=1MHz, V
d=1V rms, V
D=-50V
f=1MHz, V
d=1V rms, V
D=-100 V
f=1MHz, V
d=1V rms, V
DTR =0
(see Note 4)
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
37
31
40
34
36
30
31
24
17
13
14
10
20
17
48
41
52
44
47
39
40
31
23
17
18
13
27
23
pF
NOTE 4: Three-terminal guarded measurement, unmeasured terminal voltage bias is zero. First six capacitance values, with bias VD, are
for the R-G and T-G terminals only. The last capacitance value, with bias VDTR, is for the T-R terminals.
Thermal Characteristics
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Parameter Test Conditions Min Typ Max Unit
RθJA Junction to free air thermal resistance Ptot =0.8W, T
A=25 °C
5cm
2, FR4 PCB
D Package 160
°C/WP Package 100
SL Package 135
MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Parameter Measurement Information
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Figure 1. Voltage-Current Characteristic for T and R Terminals
T and G and R and G Measurements are Referenced to the G Terminal
T and R Measurements are Referenced to the R Terminal
-v VDRM
IDRM
VD
IH
ITSM
ITSP
V(BO)
I(BO)
ID
Quadrant I
Switching
Characteristic
+v
+i
V(BO)
I(BO)
VDRM
IDRM
VD
ID
IH
ITSM
ITSP
-i
Quadrant III
Switching
Characteristic PMXXAAA
MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Typical Characteristics - R and G, or T and G Terminals
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Figure 2. Figure 3.
Figure 4. Figure 5.
T
J
- Junction Temperature - °C
T
J
- Junction Temperature - °C
T
J
- Junction Temperature - °C
-25 0 25 50 75 100 125 150
I
D
- Off-S mAtate Current -
0·001
0·01
0·1
0·001
0·01
0·1
1
10
100 TC7MAC
V
D
= -50 V
V
D
= 50 V
-25 0 25 50 75 100 125 150
I
D
- Off-State Current -
1
10
100 TC7HAC
V
D
= -50 V
V
D
= 50 V
-25 0 25 50 75 100 125 150
0.9
1.0
1.1
1.2
TC7MAE
V
(BO)
V
(BR)
V
(BR)M
Positive Polarity
Normalized to V
(BR)
I
(BR)
= 1 mA and 25 °C
T
J
- Junction Temperature - °C
1 mA and 25 °C
-25 0 25 50 75 100 125 150
Normalized Breakdown Voltages
0.9
1.0
1.1
1.2
TC7HAE
V
(BO)
V
(BR)
V
(BR)M
Positive Polarity
Normalized to V
(BR)
I
(BR)
=
TISP7125F3 THRU TISP7180F3
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
TISP7240F3 THRU TISP7380F3
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
NORMALIZED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
NORMALIZED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
mA
1 mA and 25 °C
Normalized Breakdown Voltages
MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Typical Characteristics - R and G, or T and G Terminals
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Figure 6. Figure 7.
Figure 8. Figure 9.
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
0.9
1.0
1.1
1.2
TC7MAF
V(BO)
V(BR)
V(BR)M
Negative Polarity
Normalized to V(BR)
I(BR) = 1 mA and 25 °C
Junction Temperature - °C
TJ -
-25 0 25 50 75 100 125 150
0.9
1.0
1.1
1.2
TC7HAF
V(BO)
V(BR)
V(BR)M
Negative Polarity
Normalized to V(BR)
I(BR)
VT - On-State Voltage - V
23456789110 10
IT - On-State Current - A
1
10
100 TC7MAL
Positive Polarity
VT - On-State Voltage - V
234567891
IT - On-State Current - A
1
10
100 TC7HAL
150 °C
Positive Polarity
TISP7125F3 THRU TISP7180F3
NORMALIZED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
TISP7240F3 THRU TISP7380F3
NORMALIZED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
= 1 mA and 25 °C
25 °C
25 °C
-40 °C
-40 °C
150 °C
Normalized Breakdown Voltages
Normalized Breakdown Voltages
MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Typical Characteristics - R and G, or T and G Terminals
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Figure 10. Figure 11.
Figure 12. Figure 13.
V
T
- On-State Voltage - V
23456789110
I
T
- On-State Current - A
1
10
100 TC7MAM
-40 °C
150 °C
Negative Polarity
V
T
- On-State Voltage - V
23456789110
I
T
- On-State Current - A
1
10
100 TC7HAM
Negative Polarity
T
J
- Junction Temperature - °CT
J
- Junction Temperature - °C
-25 0 25 50 75 100 125 150
I
H
, I
(BO)
- Holding Current, Breakover Current - A
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.1
1.0
-25 0 25 50 75 100 125 150
I
H
, I
(BO)
- Holding Current, Breakover Current - A
0·06
0·07
0·08
0·09
0·2
0·3
0·4
0·5
0·6
0·7
0·8
0·9
0·1
1·0 TC7HAH
I
H
+I
(BO)
-I
(BO)
TISP7125F3 THRU TISP7180F3
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
TISP7240F3 THRU TISP7380F3
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
HOLDING CURRENT & BREAKOVER CURRENT
HOLDING CURRENT & BREAKOVER CURRENT
vs
JUNCTION TEMPERATURE
25 °C
-40 °C
150 °C25 °C
MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Typical Characteristics - R and G, or T and G Terminals
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Figure 14. Figure 15.
Figure 16. Figure 17.
0·001 0·01 0·1 0·001 0·01 0·1110100
1.0
1.1
1.2 TC7MAU
Positive
Negative
di/dt - Rate of Rise of Principle Current - A/µsdi/dt - Rate of Rise of Principle Current - A/µs
110100
1.0
1.1
1.2
TC7HAU
Positive
Negative
10 100 1000
Maximum Surge Current - A
Maximum Surge Current - A
10
100
1000 TC7MAA
2
Decay Time - µsDecay Time - µs
10 100 1000
10
100
1000 TC7HAA
2
TISP7125F3 THRU TISP7180F3
NORMALIZED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
TISP7240F3 THRU TISP7380F3
NORMALIZED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
SURGE CURRENT
vs
DECAY TIME
SURGE CURRENT
vs
DECAY TIME
Normalized Breakdown Voltage
Normalized Breakdown Voltage
MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Typical Characteristics - R and T Terminals
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Figure 18. Figure 19.
Figure 20. Figure 21.
T
J
- Junction Temperature - °C
T
J
-Junction Temperature - °C
T
J
- Junction Temperature - °C
T
J
- Junction Temperature - °C
-25 0 25 50 75 100 125 150
I
D
-Off-State Current - µA
I
D
-Off-State Current - µA
0·001
0·01
0·1
1
10
100 TC7MAD
-25 0 25 50 75 100 125 150
0·001
0·01
0·1
1
10
100 TC7HAD
-25 0 25 50 75 100 125 150
0.9
1.0
1.1
1.2
TC7MAG
V
(BO)
V
(BR)
V
(BR)M
-25 0 25 50 75 100 125 150
Normalized Breakdown Voltages
Normalized Breakdown Voltages
0.9
1.0
1.1
1.2
TC7HAG
V
(BO)
V
(BR)
V
(BR)M
TISP7125F3 THRU TISP7180F3
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
TISP7240F3 THRU TISP7380F3
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
NORMALIZED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
NORMALIZED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Typical Characteristics - R and T Terminals
Figure 22. Figure 23.
Figure 24. Figure 25.
VT - On-State Voltage - V
23456789110
IT - On-State Current - A
1
10
100 TC7MAK
-40 °C
150 °C25 °C
VT - On-State Voltage - V
23456789110
IT - On-State Current - A
1
10
100 TC7HAK
-40 °C
150 °C25 °C
TJ- Junction Temperature - °CTJ- Junction Temperature - °C
-25 0 25 50 75 100 125 150
IH, I(BO)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.1
1.0 TC7MAJ
IH
I(BO)
-25 0 25 50 75 100 125 150
IH, I(BO) - Holding Current, Breakover Current - A
- Holding Current, Breakover Current - A
0·06
0·07
0·08
0·09
0·2
0·3
0·4
0·5
0·6
0·7
0·8
0·9
0·1
1·0 TC7HAJ
IH
I(BO)
TISP7125F3 THRU TISP7180F3
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
TISP7240F3 THRU TISP7380F3
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
HOLDING CURRENT & BREAKOVER CURRENT
vs
JUNCTION TEMPERATURE
HOLDING CURRENT & BREAKOVER CURRENT
vs
JUNCTION TEMPERATURE
MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Typical Characteristics - R and T Terminals
Figure 26. Figure 27.
di/dt - Rate of Rise of Principle Current - A/µs
0·001 0·01 0·1 1 10 100
di/dt - Rate of Rise of Principle Current - A/µs
0·001 0·01 0·1 1 10 100
Normalized Breakover Voltage
Normalized Breakover Voltage
1.0
1.1
1.2 TC7MAV
1.0
1.1
1.2 TC7HAV
TISP7125F3 THRU TISP7180F3
NORMALIZED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
TISP7240F3 THRU TISP7380F3
NORMALIZED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Thermal Information
Figure 28. Figure 29.
Figure 30. Figure 31.
t - Current Duration - s
0·1 1 10 100 1000
ITRMS - Maximum Non-Recurrent 50 Hz Current - A
1
10
TI7MAA
VGEN = 250 Vrms
RGEN = 10 to 150 Ω
D Package
SL Package
P Package
t - Current Duration - s
0·1 1 10 100 1000
ITRMS - Maximum Non-Recurrent 50 Hz Current - A
1
10
TI7HAA
D Package
SL Package
P Package
VGEN = 350 Vrms
RGEN = 20 to 250 Ω
t - Power Pulse Duration - s
0·0001 0·001 0·01 0·1 0·0001 0·001 0·01 0·1
110100 1000
ZθJA
- Transient Thermal Impedance - °C/W
- Transient Thermal Impedance - °C/W
1
10
100
D Package P Package
TI7MAB
SL Package
t - Power Pulse Duration - s
110100 1000
ZθJA
1
10
100
D Package P Package
TI7MAB
SL Package
TISP7125F3 THRU TISP7180F3
MAXIMUM NON-RECURRING 50 Hz CURRENT
vs
CURRENT DURATION
TISP7240F3 THRU TISP7380F3
MAXIMUM NON-RECURRING 50 Hz CURRENT
vs
CURRENT DURATION
THERMAL RESPONSE THERMAL RESPONSE
MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Thermal Information
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Rating Symbol Value Unit
Non-repetitive peak on-state pulse current, 0 °C < TA < 70 °C(see Notes 5, 6 and 7)
IPPSM A
1/2 (Gas tube differential transient, 1/2 voltage wave shape) 320
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 175
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 Ω resistor) 90
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 150
10/160 (FCC Part 68, 10/160 voltage wave shape) 90
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, dual) 70
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape) 65
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single) 65
5/320 (FCC Part 68, 9/720 voltage wave shape) 65
10/560 (FCC Part 68, 10/560 voltage wave shape) 45
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) 40
NOTES: 5.
6. See Applications Information for details on wave shapes.
7. Above 70 °C, derate IPPSM linearly to zero at 150 °C lead temperature.
Initially, the TISP device must be in thermal equilibrium at the specified T . The impulse may be repeated after the TISP device
returns to its initial conditions. The rated current values may be applied either to the R to G or to the T to G or to the T to R
terminals. Additionally, both R to G and T to G may have their rated current values applied simultaneously (In this case the total
G terminal current will be twice the above rated current values).
A®®
MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
There are three categories of surge generator type: single wave shape, combination wave shape and circuit defined. Single wave shape
generators have essentially the same wave shape for the open circuit voltage and short circuit current (e.g. 10/1000 open circuit voltage and
short circuit current). Combination generators have two wave shapes, one for the open circuit voltage and the other for the short circuit current
(e.g. 1.2/50 open circuit voltage and 8/20 short circuit current). Circuit specified generators usually equate to a combination generator,
although typically only the open circuit voltage wave shape is referenced (e.g. a 10/700 open circuit voltage generator typically produces a 5/
310 short circuit current). If the combination or circuit defined generators operate into a finite resistance, the wave shape produced is interme-
diate between the open circuit and short circuit values.
Most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an exponential rise and an
exponential decay. Wave shapes are classified in terms of rise time in microseconds and a decay time in microseconds to 50% of the
maximum amplitude. The notation used for the wave shape is rise time/decay time, without the microseconds quantity and the “/” between the
two values has no mathematical significance. A 50 A, 5/310 waveform would have a peak current value of 50 A, a rise time of 5 µs and a decay
time of 310 µs. The TISP® surge current graph comprehends the wave shapes of commonly used surges.
Deployment
Wave Shape Notation
Generators
ITU-T 10/700 Generator
APPLICATIONS INFORMATION
Lightning Surge
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
These devices are three terminal overvoltage protectors. They limit the voltage between three points in the circuit. Typically, this would be the
two line conductors and protective ground (Figure 32).
In Figure 32, protective functions Th2 and Th3 limit the maximum voltage between each conductor and ground to their respective ±V(BO)
values. Protective function Th1 limits the maximum voltage between the two conductors to its ±V(BO) value.
This circuit defined generator is specified in many standards. The descriptions and values are not consistent between standards and it is
important to realize that it is always the same generator being used.
Figure 33 shows the 10/700 generator circuit defined in ITU-T recommendation K.20 (10/96) “Resistibility of telecommunication switching
equipment to overvoltages and overcurrents”. The basic generator comprises of:
Capacitor C1, charged to voltage VC, which is the energy storage element
Switch SW to discharge the capacitor into the output shaping network
Shunt resistor R1, series resistor R2 and shunt capacitor C2 form the output shaping network
Series feed resistor R3 to connect to one line conductor for single surge
Series feed resistor R4 to connect to the other line conductor for dual surging
In the normal single surge equipment test configuration, the unsurged line is grounded. This is shown by the dotted lines in the top drawing of
Figure 33. However, doing this at device test places one terminal pair in parallel with another terminal pair. To check the individual terminal
pairs of the TISP7xxxF3, without any paralleled operation, the unsurged terminal is left unconnected.
Figure 32. MULTI-POINT PROTECTION
Th3
Th2
Th1
MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
APPLICATIONS INFORMATION
ITU-T 10/700 Generator (continued)
Lightning Surge (continued)
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
With the generator output open circuit, when SW closes, C1 discharges through R1. The decay time constant will be C1R1, or 20 x 50 =
1000 µs. For the 50% voltage decay time, the time constant needs to be multiplied by 0.697, giving 0.697 x 1000 = 697 µs which is rounded to
700 µs.
The output rise time is controlled by the time constant of R2 and C2, which is 15 x 200 = 3000 ns or 3 µs. Virtual voltage rise times are given
by straight line extrapolation through the 30% and 90% points of the voltage waveform to zero and 100%. Mathematically, this is equivalent to
3.24 times the time constant, which gives 3.24 x 3 = 9.73 which is rounded to 10 µs. Thus, the open circuit voltage rises in 10 µs and decays in
700 µs, giving the 10/700 generator its name.
When the overvoltage protector switches, it effectively shorts the generator output via the series 25 Ω resistor. Two short circuit conditions
need to be considered: single output using R3 only (top circuit of Figure 33) and dual output using R3 and R4 (bottom circuit of Figure 33).
For the single test, the series combination of R2 and R3 (15 + 25 = 40 Ω) is in shunt with R1. This lowers the discharge resistance from 50 Ω to
22.2 Ω, giving a discharge time constant of 444 µs and a 50% current decay time of 309.7 µs, which is rounded to 310 µs.
For the rise time, R2 and R3 are in parallel, reducing the effective source resistance from 15 Ω to 9.38 Ω, giving a time constant of 1.88 µs.
Virtual current rise times are given by straight line extrapolation through the 10% and 90% points of the current waveform to zero and 100%.
Mathematically, this is equivalent to 2.75 times the time constant, which gives 2.75 x 1.88 = 5.15, which is rounded to 5 µs. Thus, the short
circuit current rises in 5 µs and decays in 310 µs, giving the 5/310 wave shape.
The series resistance from C1 to the output is 40 Ω, giving an output conductance of 25 A/kV. For each 1 kV of capacitor charge voltage, 25 A
of output current will result.
For the dual test, the series combination of R2 plus R3 and R4 in parallel (15 + 12.5 = 27.5 Ω) is in shunt with R1. This lowers the discharge
resistance from 50 Ω to 17.7 Ω, giving a discharge time constant of 355 µs and a 50% current decay time of 247 µs, which is rounded to
250 µs.
For the rise time, R2, R3 and R4 are in parallel, reducing the effective source resistance from 15 Ω to 6.82 Ω, giving a time constant of 1.36 µs,
which gives a current rise time of 2.75 x 1.36 = 3.75, which is rounded to 4 µs. Thus, the short circuit current rises in 4 µs and decays in 250
µs, giving the 4/250 wave shape.
Figure 33.
C2
200 nF
R1
50 Ω
C1
20 µF
R2
15 Ω
SW
VC
2.8 kV
R3
25 Ω
RT
T
G
TR
G
R
G
T AND G
TEST
R AND G
TEST
R AND T
TEST
70 A
5/310
70 A
5/310
10/700 GENERATOR - SINGLE TERMINAL PAIR TEST
C2
200 nF
R1
50 Ω
C1
20 µF
R2
15 Ω
SW R3
25 Ω
R4
25 Ω
RT
G
DUAL
T AND G,
R AND G
TEST
95 A
4/250
95 A
4/250
190 A
4/250
VC
5.2 kV
10/700 GENERATOR - DUAL TERMINAL PAIR TEST
MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
APPLICATIONS INFORMATION
ITU-T 10/700 Generator (continued)
Lightning Surge (continued)
1.2/50 Generators
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
The series resistance from C1 to an individual output is 2 x 27.5 = 55 Ω, giving an output conductance of 18 A/kV. For each 1 kV of capacitor
charge voltage, 18 A of output current will result.
At 25 °C, these protectors are rated at 70 A for the single terminal pair condition and 95 A for the dual condition (R and G terminals and T and
G terminals). In terms of generator voltage, this gives a maximum generator setting of 70 x 40 = 2.8 kV for the single condition and 2 x 95 x
27.5 = 5.2 kV for the dual condition. The higher generator voltage setting for the dual condition is due to the current waveform decay being
shorter at 250 µs compared to the 310 µs value of the single condition.
Other ITU-T recommendations use the 10/700 generator: K.17 (11/88) “Tests on power-fed repeaters using solid-state devices in order to
check the arrangements for protection from external interference” and K.21(10/96) “Resistibility of subscriber’s terminal to overvoltages and
overcurrents”, K.30 (03/93) “Positive temperature coefficient (PTC) thermistors”.
Several IEC publications use the 10/700 generator; common ones are IEC 6100-4-5 (03/95) “Electromagnetic compatibility (EMC) - Part 4:
Testing and measurement techniques - Section 5: Surge immunity test” and IEC 60950 (04/ 99) “Safety of information technology equipment”.
The IEC 60950 10/700 generator is carried through into other “950” derivatives. Europe is harmonized by CENELEC (Comité Européen de
Normalization Electro-technique) under EN 60950 (included in the Low Voltage Directive, CE mark). US has UL (Underwriters Laboratories)
1950 and Canada CSA (Canadian Standards Authority) C22.2 No. 950.
FCC Part 68 “Connection of terminal equipment to the telephone network” (47 CFR 68) uses the 10/700 generator for Type B surge testing.
Part 68 defines the open circuit voltage wave shape as 9/720 and the short circuit current wave shape as 5/320 for a single output. The current
wave shape in the dual (longitudinal) test condition is not defined, but it can be assumed to be 4/250.
Several VDE publications use the 10/700 generator, for example: VDE 0878 Part 200 (12/92) ”Electromagnetic compatibility of information
technology equipment and telecommunications equipment; Immunity of analogue subscriber equipment”.
The 1.2/50 open circuit voltage and 8/20 short circuit current combination generator is defined in IEC 61000-4-5 (03/95) “Electromagnetic
compatibility (EMC) - Part 4: Testing and measurement techniques - Section 5: Surge immunity test”. This generator has a fictive output
resistance of 2 Ω, meaning that dividing the open circuit output voltage by the short circuit output current gives a value of 2 Ω(500 A/kV).
The combination generator has three testing configurations; directly applied for testing between equipment a.c. supply connections, applied
via an external 10 Ω resistor for testing between the a.c. supply connections and ground, and applied via an external 40 Ω resistor for testing
all other lines. For unshielded unsymmetrical data or signalling lines, the combination generator is applied via a 40 Ω resistor either between
lines or line to ground. For unshielded symmetrical telecommunication lines, the combination generator is applied to all lines via a resistor of
n x 40 Ω, where n is the number of conductors and the maximum value of external feed resistance is 250 Ω. Thus, for four conductors, n = 4
and the series resistance is 4 x 40 = 160 Ω. For ten conductors, the resistance cannot be 10 x 40 = 400 Ω and must be 250 Ω. The combina-
tion generator is used for short distance lines; long distance lines are tested with the 10/700 generator.
When the combination generator is used with a 40 Ω, or more, external resistor, the current wave shape is not 8/20, but becomes closer to the
open circuit voltage wave shape of 1.2/50. For example, a commercial generator when used with 40 Ω produced an 1.4/50 wave shape.
The wave shapes of 1.2/50 and 8/20 occur in other generators as well. British Telecommunication has a combination generator with 1.2/50
voltage and 8/20 current wave shapes, but it has a fictive resistance of 1 Ω. ITU-T recommendation K.22 “Overvoltage resistibility of equip-
ment connected to an ISDN T/S BUS” (05/95) has a 1.2/50 generator option using only resistive and capacitive elements, Figure 34.
The K.22 generator produces a 1.4/53 open circuit voltage wave. Using 25 Ω output resistors, gives a single short circuit current output wave
shape of 0.8/18 with 26 A/kV and a dual of 0.6/13 with 20 A/kV. These current wave shapes are often rounded to 1/20 and 0.8/14.
MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
APPLICATIONS INFORMATION
1.2/50 Generators (continued)
Lightning Surge (continued)
Impulse Testing
Standard
Peak Voltage
Setting
V
Voltage
Waveform
µs
Peak Current
Value
A
Current
Waveform
µs
TISP7xxxF3
25 °C Rating
A
Series
Resistance
Ω
Coordination
Resistance
Ω (Min.)
GR-1089-CORE 2500 2/10 2 x 500 2/10 2 x 190 12 NA
1000 10/1000 2 x 100 10/1000 2 x 45
FCC Part 68
(March 1998)
1500 10/160 200 10/160 110 6
NA
800 10/560 100 10/560 50 8
1000
1500
1500
9/720 †
(SINGLE)
(DUAL)
25
37.5
2 x 27
5/320 †
5/320 †
4/250
70
70
2 x 95
0
I 31-24 1500 0.5/700 37.5 0.2/310 70 0 NA
ITU-T K.20/K.21
1000
1500
4000
4000
10/700
(SINGLE)
(SINGLE)
(DUAL)
25
37.5
100
2 x 72
5/310
5/310
5/310
4/250
70
70
70
2 x 95
0
0
17
0
NA
NA
6
6
† FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K.21 10/700 impulse generator
NA = Not Applicable, primary protection removed or not specified.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
There are 8/20 short circuit current defined generators. These are usually very high current, 10 kA or more and are used for testing a.c.
protectors, primary protection modules and some Gas Discharge Tubes.
To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms.
The table in this section shows some common test values.
Manufacturers are being increasingly required to design in protection coordination. This means that each protector is operated at its design
level and currents are diverted through the appropriate protector, e.g. the primary level current through the primary protector and lower levels
of current may be diverted through the secondary or inherent equipment protection. Without coordination, primary level currents could pass
through the equipment only designed to pass secondary level currents. To ensure coordination happens with fixed voltage protectors, some
resistance is normally used between the primary and secondary protection (R1a and R1b, Figure 36). The values given in this data sheet apply
to a 400 V (d.c. sparkover) gas discharge tube primary protector and the appropriate test voltage when the equipment is tested with a primary
protector.
If the impulse generator current exceeds the protector’s current rating, then a series resistance can be used to reduce the current to the
protector’s rated value to prevent possible failure. The required value of series resistance for a given waveform is given by the following
calculations. First, the minimum total circuit impedance is found by dividing the impulse generator’s peak voltage by the protector’s rated
current. The impulse generator’s fictive impedance (generator’s peak voltage divided by peak short circuit current) is then subtracted from the
minimum total circuit impedance to give the required value of series resistance. In some cases, the equipment will require verification over a
temperature range. By using the derated waveform values from the thermal information section, the appropriate series resistor value can be
calculated for ambient temperatures in the range of 0 °C to 70 °C.
Figure 34.
C2
30 nF
R1
76 Ω
C1
1 µF
R2
13 Ω
SW
VC
1 kV
K.22 1.2/50 GENERATOR
C3
8 nF
C4
8 nF
NOTE: SOME STANDARDS
REPLACE OUTPUT
CAPACITORS WITH
25 Ω RESISTORS
MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
APPLICATIONS INFORMATION
Protection Voltage
Off-State Capacitance
Capacitance
Longitudinal Balance
Figure 35.
All capacitance measurements in this data sheet are three terminal guarded to allow the designer to accurately assess capacitive unbalance
effects. Simple two terminal capacitance meters (unguarded third terminal) give false readings as the shunt capacitance via the third terminal is
included.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
The protection voltage, (V(BO) ), increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on the
rate of current rise, di/dt, when the TISP® device is clamping the voltage in its breakdown region. The V(BO) value under surge conditions can
be estimated by multiplying the 50 Hz rate V(BO) (250 V/ms) value by the normalized increase at the surge’s di/dt. An estimate of the di/dt can
be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.
As an example, the ITU-T recommendation K.21 1.5 kV, 10/700 surge has an average dv/dt of 150 V/µs, but, as the rise is exponential, the
initial dv/dt is three times higher, being 450 V/µs. The instantaneous generator output resistance is 25 Ω. If the equipment has an additional
series resistance of 20 Ω, the total series resistance becomes 45 Ω. The maximum di/dt then can be estimated as 450/45 = 10 A/µs. In
practice, the measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resistance of the TISP®
breakdown region.
The off-state capacitance of a TISP® device is sensitive to junction temperature, TJ, and the bias voltage, comprising of the dc voltage, VD,
and the ac voltage, Vd. All the capacitance values in this data sheet are measured with an ac voltage of 1 Vrms. When VD >> Vd, the capaci-
tance value is independent on the value of Vd. Up to 10 MHz, the capacitance is essentially independent of frequency. Above 10 MHz, the
effective capacitance is strongly dependent on connection inductance. For example, a printed wiring (PW) trace of 10 cm could create a circuit
resonance with the device capacitance in the region of 80 MHz.
Figure 35 shows a three terminal TISP® device with its equivalent “delta” capacitance. Each capacitance, CTG, CRG and CTR, is the true
terminal pair capacitance measured with a three terminal or guarded capacitance bridge. If wire R is biased at a larger potential than wire T,
then CTG > CRG. Capacitance CTG is equivalent to a capacitance of CRG in parallel with the capacitive difference of (CTG -CRG). The line
capacitive unbalance is due to (CTG -CRG) and the capacitance shunting the line is CTR +CRG/2 .
MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Typical Circuits
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Figure 36. Protection Module
Figure 37. ISDN Protection
Figure 38. Line Card Ring/Test Protection
PROTECTED
EQUIPMENT
AI7XBP
TISP7xxxF3
Th3
Th2
Th1
R1a
R1b
RING
WIRE
TIP
WIRE F1a
F1b
GDTb
GDTa
R1a
R1b
AI7XBM
SIGNAL
D.C.
Th3
Th2
Th1
TISP7150F3
TEST
RELAY RING
RELAY SLIC
RELAY
TEST
EQUIP-
MENT RING
GENERATOR
S1a
S1b
R1a
R1b
RING
WIRE
TIP
WIRE
Th3
Th2
Th1
Th4
Th5
SLIC
SLIC
PROTECTION
RING/TEST
PROTECTION
OVER-
CURRENT
PROTECTION
S2a
S2b
S3a
S3b
V
BAT
C1
220 nF
AI7XBN
TISP6xxxx,
TISPPBLx,
1/2TISP6NTP2
COORDI-
NATION
RESISTANCE
TISP7xxxF3
MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
MECHANICAL DATA
D008 Plastic Small-outline Package
NOTES: A. Leads are within 0.25 (0.010) radius of true position at maximum material condition.
B. Body dimensions do not include mold flash or protrusion.
C. Mold flash or protrusion shall not exceed 0.15 (0.006).
D. Lead tips to be planar within ±0.051 (0.002).
D008
8765
4
3
2
1
8-pin Small Outline Microelectronic Standard
Package MS-012, JEDEC Publication 95
MDXXAAC
INDEX
4.80 - 5.00
(0.189 - 0.197)
5.80 - 6.20
(0.228 - 0.244)
3.81 - 4.00
(0.150 - 0.157)
1.35 - 1.75
(0.053 - 0.069)
0.102 - 0.203
(0.004 - 0.008)
0.28 - 0.79
(0.011 - 0.031)
0.51 - 1.12
(0.020 - 0.044)
4.60 - 5.21
(0.181 - 0.205)
0.36 - 0.51
(0.014 - 0.020)
0.25 - 0.50
(0.010 - 0.020)
0.190 - 0.229
(0.0075 - 0.0090)
Pin Spacing
1.27
(0.050)
(see Note A)
6 places
x 45 ° N0M
8 Places
7 ° NOM
4 Places
7 ° NOM
3 Places
4 ° ± 4 °
DIMENSIONS ARE: METRIC
(INCHES)
This small-outline package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will
withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high
humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
MECHANICAL DATA
D008 Tape DImensions
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
0.8
(0.03)
1.50
(.059)
3.90 - 4.10
(.154 - .161)
5.40 - 5.60
(.213 - .220)
1.95 - 2.05
(.077 - .081)
7.90 - 8.10
(.311 - .319)
6.30 - 6.50
(.248 - .256)
11.70 - 12.30
(.461 - .484)
D008 Package (8-pin Small Outline) Single-Sprocket Tape
Direction of Feed
ø MIN.
Carrier Tape
Embossment
Cover
Tape
NOTES: A. Taped devices are supplied on a reel of the following dimensions:-
Reel diameter:
Reel hub diameter:
Reel axial hole:
B. 2500 devices are on a reel.
MDXXATB
DIMENSIONS ARE: MILLIMETERS
(INCHES)
330 +0.0/-4.0
(12.992 +0.0/-.157)
100 ± 2.0
(3.937 ± .079)
13.0 ± 0.2
(.512 ± .008)
0 MIN.
MIN.
0.40
(0.016)
2.0 - 2.2
(.079 - .087)
1.50 - 1.60
(.059 - .063)
MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
MECHANICAL DATA
D008 Plastic Dual-in-Line Package
P008
312 4
8765
Seating
Plane
NOTES: A. Each pin centerline is located within 0.25 (0.010) of its true longitudinal position.
B. Dimensions fall within JEDEC MS001 - R-PDIP-T, 0.300" Dual-In-Line Plastic Family.
MDXXCF
Index
Notch
9.25 - 9.75
(0.364 - 0.384)
6.10 - 6.60
(0.240 - 0.260)
5.08
(0.200)
1.78
(0.070) MAX.
4 Places
8 Places
MAX.
3.17
(0.125) MIN.
0.51
(0.020) MIN.
2.54
(0.100) Typical
(see Note A)
6 Places
0.38 - 0.53
(0.015 - 0.021)
7.62 - 8.23
(0.300 - 0.324)
8.38 - 9.40
(0.330 - 0.370)
0.20 - 0.36
(0.008 - 0.014)
DIMENSIONS ARE: METRIC
(INCHES)
This dual-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will
withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high
humidity conditions. The package is intended for insertion in mounting-hole rows on 7.62 (0.300) centers. Once the leads are compressed and
inserted, sufficient tension is provided to secure the package in the board during soldering. Leads require no additional cleaning or processing
when used in soldered assembly.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
MECHANICAL DATA
SL003 3-pin Plastic Single-in-Line Package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will
withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high
humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
SL003
2
1 3
NOTES: A. Each pin centerline is located within 0.25 (0.010) of its true longitudinal position.
B. Body molding flash of up to 0.15 (0.006) may occur in the package lead plane.
MDXXCE
Index
Notch
9.25 - 9.75
(0.364 - 0.384)
3.20 - 3.40
(0.126 - 0.134)
6.10 - 6.60
(0.240- 0.260)
0.203 - 0.356
(0.008- 0.014)
0.559 - 0.711
(0.022 - 0.028)
3 Places
12.9
(0.492)
DIMENSIONS ARE: METRIC
(INCHES)
4.267
(0.168)
MIN.
MAX.
1.854
(0.073)
MAX.
8.31
(0.327)
MAX.
2.54
(0.100) Typical
(See Note A)
2 Places
