August 2010
FDMS0308CS N-Channel PowerTrench® SyncFETTM
©2010 Fairchild Semiconductor Corporation
FDMS0308CS Rev.C
www.fairchildsemi.com
1
FDMS0308CS
N-Channel PowerTrench® SyncFETTM
30 V, 42 A, 3 m:
Features
Max rDS(on) = 3.0 m: at VGS = 10 V, ID = 21 A
Max rDS(on) = 3.5 m: at VGS = 4.5 V, ID = 17 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
The FDMS0308CS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Desktop
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage 30 V
VGS Gate to Source Voltage (Note 4) ±20 V
ID
Drain Current -Continuous (Package limited) TC = 25 °C 42
A
-Continuous (Silicon limited) TC = 25 °C 113
-Continuous TA = 25 °C (Note 1a) 22
-Pulsed 150
EAS Single Pulse Avalanche Energy (Note 3) 98 mJ
PD
Power Dissipation TC = 25 °C 65 W
Power Dissipation TA = 25 °C (Note 1a) 2.5
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RTJC Thermal Resistance, Junction to Case 1.9 °C/W
RTJA Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDMS0308CS FDMS0308CS Power 56 13 ’’ 12 mm 3000 units
4
3
2
1
5
6
7
8
Power 56
D
DDD
S
S
S
G
D
D
D
D
G
SSS
Pin 1
Bottom
Top
FDMS0308CS N-Channel PowerTrench® SyncFETTM
FDMS0308CS Rev.C www.fairchildsemi.com
2
Electrical Characteristics TA = 25 °C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 30 V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient ID = 10 mA, referenced to 25 °C 14 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 PA
IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA
On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.6 3.0 V
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = 10 mA, referenced to 25 °C -5 mV/°C
rDS(on) StaticDrain to Source On Resistance
VGS = 10 V, ID = 21 A 1.9 3.0
m:VGS = 4.5 V, ID = 17 A 2.5 3.5
VGS = 10 V, ID = 21 A, TJ = 125 °C 2.5 3.8
gFS Forward Transconductance VDS = 5 V, ID = 21 A 300 S
(Note 2)
Dynamic Characteristics
Ciss Input Capacitance VDS = 15 V, VGS = 0 V,
f = 1 MHz
3175 4225 pF
Coss Output Capacitance 1175 1565 pF
Crss Reverse Transfer Capacitance 110 165 pF
RgGate Resistance 1.3 2.6 :
Switching Characteristics
td(on) Turn-On Delay Time
VDD = 15 V, ID = 21 A,
VGS = 10 V, RGEN = 6 :
14 25 ns
trRise Time 612ns
td(off) Turn-Off Delay Time 35 56 ns
tfFall Time 510ns
QgTotal Gate Charge VGS = 0 V to 10 V
VDD = 15 V,
ID = 21 A
47 66 nC
QgTotal Gate Charge VGS = 0 V to 4.5 V 22 31 nC
Qgs Gate to Source Gate Charge 8.5 nC
Qgd Gate to Drain “Miller” Charge 4.9 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2 A (Note 2) 0.43 0.7 V
VGS = 0 V, IS = 21 A (Note 2) 0.75 1.2
trr Reverse Recovery Time IF = 21 A, di/dt = 300 A/ Ps 35 56 ns
Qrr Reverse Recovery Charge 41 67 nC
Notes:
1. RTJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3. EAS of 98 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 14 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 21 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
FDMS0308CS N-Channel PowerTrench® SyncFETTM
FDMS0308CS Rev.C www.fairchildsemi.com
3
Typical Characteristics TJ = 25 °C unless otherwise noted
Figure 1.
0.00.51.01.52.0
0
30
60
90
120
150
VGS = 3.5 V
VGS = 4.5 V
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
VGS = 4 V
VGS = 3 V
VGS = 10 V
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
0306090120150
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VGS = 3.5 V
PULSE DURATION = 80
P
s
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 4 V
VGS = 4.5 V
VGS = 3 V
VGS = 10 V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
-75 -50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
ID = 21 A
VGS = 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPERATURE (oC)
vs Junction Temperature
Figure 4.
246810
0
2
4
6
8
10
ID = 21 A
TJ = 25 oC
TJ = 125 oC
VGS, GATE TO SOURCE VOLTAGE (V)
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (m:)
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
O n -R es i s t an ce v s G a t e to
Source Voltage
Figure 5. Transfer Characteristics
1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
30
60
90
120
150
VDS = 5 V
PULSE DURATION = 80
P
s
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
TJ = 125 oC
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
200
TJ = -55 oC
TJ = 25 oC
TJ = 125 oC
VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
S ou r ce to D ra i n D io d e
Forward Voltage vs Source Current
FDMS0308CS N-Channel PowerTrench® SyncFETTM
FDMS0308CS Rev.C www.fairchildsemi.com
4
Figure 7.
0 1020304050
0
2
4
6
8
10
ID = 21 A
VDD = 10 V VDD = 20 V
VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 15 V
Gate Charge Characteristics Figure 8.
0.1 1 10 30
60
100
1000
5000
f = 1 MHz
VGS = 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 9.
0.01 0.1 1 10 100
1
10
TJ = 100 oC
300
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
IAS, AVALANCHE CURRENT (A)
40
U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10.
25 50 75 100 125 150
0
30
60
90
120
Limited by Package RTJC = 1.9 oC/W
VGS = 4.5 V
VGS = 10 V
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
Fig u r e 11. F o r w a rd Bi a s S afe
Operating Area
0.01 0.1 1 10 100
0.01
0.1
1
10
100
200 100 Ps
DC
10 s
1 s
100 ms
10 ms
1 ms
ID, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RTJA = 125 oC/W
TA = 25 oC
200
Figure 12.
10-4 10-3 10-2 10-1 110
100 1000
1
10
100
1000
10000
SINGLE PULSE
R
T
JA = 125 oC/W
TA = 25 oC
0.5
VGS = 10 V
P(PK), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
S i n g l e P u l s e M a x i m u m
Power Dissipation
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMS0308CS N-Channel PowerTrench® SyncFETTM
FDMS0308CS Rev.C www.fairchildsemi.com
5
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
10-4 10-3 10-2 10-1 110
100 1000
0.0001
0.001
0.01
0.1
1
SINGLE PULSE
RTJA = 125 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZTJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMS0308CS N-Channel PowerTrench® SyncFETTM
FDMS0308CS Rev.C www.fairchildsemi.com
6
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MoSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS0308CS.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
Typical Characteristics (continued)
Figure 14. FDMS0308CS SyncFET body
diode reverse recovery characteristic
Figure 15. SyncFET body diode reverses
leakage versus drain-source voltage
0 5 10 15 20 25 30
10-6
10-5
10-4
10-3
10-2
TJ = 125 oC
TJ = 100 oC
TJ = 25 oC
IDSS, REVERSE LEAKAGE CURRENT (A)
VDS, REVERSE VOLTAGE (V)
0306090120150
-5
0
5
10
15
20
25
di/dt = 300 A/Ps
CURRENT (A)
TIME (ns)
FDMS0308CS N-Channel PowerTrench® SyncFETTM
FDMS0308CS Rev.C www.fairchildsemi.com
7
Dimensional Outline and Pad Layout
FDMS0308CS Rev.C www.fairchildsemi.com8
FDMS0308CS N-Channel PowerTrench® SyncFETTM
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Definition of Terms
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t
m
®
tm
tm
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Rev. I48
™
