BUZ 11 AL Not for new design SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated * Logic Level Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 11 AL 50 V 26 A 0.055 TO-220 AB C67078-S1330-A3 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 C Values Unit A 26 IDpuls Pulsed drain current TC = 25 C 104 Avalanche current,limited by Tjmax IAR 30 Avalanche energy,periodic limited by Tjmax EAR 1.9 Avalanche energy, single pulse EAS mJ ID = 30 A, VDD = 25 V, RGS = 25 L = 15.6 H, Tj = 25 C 14 Gate source voltage VGS 14 Gate-source peak voltage,aperiodic Vgs 20 Power dissipation Ptot TC = 25 C W 75 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC 1.67 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 C K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group V 55 / 150 / 56 1 07/96 BUZ 11 AL Not for new design Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage 50 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 1.2 1.6 2 IDSS A VDS = 50 V, VGS = 0 V, Tj = 25 C - 0.1 1 VDS = 50 V, VGS = 0 V, Tj = 125 C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 RDS(on) VGS = 5 V, ID = 13 A Semiconductor Group nA - 2 0.04 0.055 07/96 BUZ 11 AL Not for new design Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS 2 * ID * RDS(on)max, ID = 13 A Input capacitance 10 pF - 1500 2000 - 580 840 - 190 300 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 22 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Rise time - 25 40 - 80 120 - 110 160 - 80 110 tr VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Turn-off delay time td(off) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Fall time tf VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Semiconductor Group 3 07/96 BUZ 11 AL Not for new design Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed - - 104 V 1.6 1.8 trr ns - 100 - Qrr VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 26 - VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge - VSD VGS = 0 V, IF = 60 A Reverse recovery time - ISM TC = 25 C Inverse diode forward voltage A C - 4 0.2 - 07/96 BUZ 11 AL Not for new design Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 5 V 80 28 A W Ptot 24 ID 60 22 20 18 50 16 40 14 12 30 10 8 20 6 4 10 2 0 0 0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 TC C 160 TC Safe operating area ID = (VDS) parameter: D = 0, TC = 25C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 10 3 K/W A ID ZthJC 10 2 100 s /ID = VD S 10 -1 1 ms ) on S( D R 10 10 0 t = 48.0s p D = 0.50 0.20 1 0.10 10 ms 0.05 10 -2 0.02 0.01 single pulse 10 DC 0 10 0 10 1 V 10 10 2 10 VDS Semiconductor Group -3 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 11 AL Not for new design Typ. output characteristics ID = (VDS) parameter: tp = 80 s Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS l 60 0.17 Ptot = 75W k ji h g A VGS [V] 50 ID a f 45 e 40 35 30 d 25 20 c 15 a 2.5 b 3.0 c 3.5 d 4.0 e 4.5 f 5.0 g 5.5 h 6.0 i 6.5 j 7.0 k 8.0 l 10.0 b c 0.14 RDS (on) 0.12 0.10 0.08 0.06 d e 0.04 f h 10 0.02 b 5 0 1.0 2.0 3.0 4.0 VGS [V] = a 3.0 2.5 3.5 b 4.0 c 4.5 d 5.0 e f 5.5 6.0 g 6.5 h i j j 7.0 8.0 10.0 0.00 a 0.0 g i V 5.5 0 5 10 15 20 25 30 35 VDS 40 A 50 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max parameter: tp = 80 s, VDS2 x ID x RDS(on)max 65 32 A S 55 ID gfs 50 24 45 20 40 35 16 30 25 12 20 8 15 10 4 5 0 0 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 0 10 20 30 40 A ID 07/96 60 BUZ 11 AL Not for new design Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 13 A, VGS = 5 V Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 0.26 4.6 V 0.22 4.0 RDS (on) 0.20 VGS(th) 3.6 0.18 3.2 0.16 2.8 0.14 2.4 98% 0.12 2.0 typ 0.10 98% 1.6 typ 1.2 0.08 2% 0.06 0.04 0.8 0.02 0.4 0.00 0.0 -60 -20 20 60 100 C 160 -60 -20 20 60 100 C Tj 160 Tj Typ. capacitances Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 3 nF A C IF Ciss 10 0 10 2 Coss Crss 10 -1 10 1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 7 07/96 3.0 BUZ 11 AL Not for new design Avalanche energy EAS = (Tj ) parameter: ID = 30 A, VDD = 25 V RGS = 25 , L = 15.6 H Typ. gate charge VGS = (QGate) parameter: ID puls = 39 A 16 15 mJ V EAS 12 VGS 11 12 10 10 9 8 0,2 VDS max 8 7 6 0,8 VDS max 6 5 4 4 3 2 2 1 0 20 0 40 60 80 100 120 C 160 Tj 0 10 20 30 40 50 60 70 nC Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 60 V V(BR)DSS 57 56 55 54 53 52 51 50 49 48 47 46 45 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 07/96 90 BUZ 11 AL Not for new design Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96